Combinatorial Material Science and Strain Engineering Enabled by Pulsed Laser Deposition Using Radially Segmented Targets

Band Offsets at κ-([Al,In]xGa1-x)2O3/MgO Interfaces

Conduction and valence band offsets are among the most crucial material parameters for semiconductor heterostructure device design, such as for high-electron mobility transistors or quantum well infrared photodetectors (QWIP). Because of its expected high spontaneous electrical polarization and the possibility of polarization doping at heterointerfaces similar to the AlGaN/InGaN/GaN system, the metastable orthorhombic κ-phase of Ga₂O₃ and its indium and aluminum alloy systems are a promising alternative for such device applications. However, respective band offsets to any dielectric are unknown, as well as the evolution of the bands within the alloy systems. We report on the valence and conduction band offsets of orthorhombic κ-(Al_xGa_1-x)₂O₃ and κ-(In_xGa_1-x)₂O₃ thin films to MgO as reference dielectric by X-ray photoelectron spectroscopy. The thin films with compositions x_In ≤ 0.27 and x_Al ≤ 0.55 were grown by pulsed laser deposition utilizing tin-doped and radially segmented targets. The determined band alignments reveal the formation of a type I heterojunction to MgO for all compositions with conduction band offsets of at least 1.4 eV, providing excellent electron confinement. Only low valence band offsets with a maximum of ∼300 meV were observed. Nevertheless, this renders MgO as a promising gate dielectric for metal-oxide-semiconductor transistors in the orthorhombic modification. We further found that the conduction band offsets in the alloy systems are mainly determined by the evolution of the band gaps, which can be tuned by the composition in a wide range between 4.1 and 6.2 eV, because the energy position of the valence band maximum remains almost constant over the complete composition range investigated. Therefore, tunable conduction band offsets of up to 1.1 eV within the alloy systems allow for subniveau transition energies in (Al_xGa_1-x)₂O₃/(In_xGa_1-x)₂O₃/(Al_xGa_1-x)₂O₃ quantum wells from the infrared to the visible regime, which are promising for application in QWIPs.

Data-Driven Materials Science: Status, Challenges, and Perspectives

Data-driven science is heralded as a new paradigm in materials science. In this field, data is the new resource, and knowledge is extracted from materials datasets that are too big or complex for traditional human reasoning-typically with the intent to discover new or improved materials or materials phenomena. Multiple factors, including the open science movement, national funding, and progress in information technology, have fueled its development. Such related tools as materials databases, machine learning, and high-throughput methods are now established as parts of the materials research toolset. However, there are a variety of challenges that impede progress in data-driven materials science: data veracity, integration of experimental and computational data, data longevity, standardization, and the gap between industrial interests and academic efforts. In this perspective article, the historical development and current state of data-driven materials science, building from the early evolution of open science to the rapid expansion of materials data infrastructures are discussed. Key successes and challenges so far are also reviewed, providing a perspective on the future development of the field.

Thin-Film Processing Routes for Combinatorial Materials Investigations-A Review

High-throughput combinatorial investigations are transforming materials discovery, phase diagram development, and processing optimization. Thin-film deposition techniques are frequently used to fabricate sample libraries employed in these studies. Various adaptations of well-known thin-film chemical vapor deposition (CVD) and physical vapor deposition (PVD) techniques utilized for the synthesis of inorganic combinatorial thin-film materials libraries are reviewed, with novel processing approaches being highlighted. Methods for developing gradients in composition of other film properties are described. Issues and considerations specific to thin-film processing of combinatorial materials libraries are discussed, with some emphasis on catalytic applications.