1
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Gonzales C, Bou A, Guerrero A, Bisquert J. Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory. J Phys Chem Lett 2024; 15:6496-6503. [PMID: 38869927 PMCID: PMC11215770 DOI: 10.1021/acs.jpclett.4c00945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 05/31/2024] [Accepted: 06/07/2024] [Indexed: 06/14/2024]
Abstract
With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors: (1) a low voltage capacitance-dominant and (2) an inductance-dominant regime evidenced by the highly correlated hysteresis type with nonzero crossing, the impedance responses, and the transient current characteristics. These dynamic capacitance- and inductance-dominant regimes provide fundamental insight into the resistive switching of memristors governing the synaptic depression and potentiation functions, respectively. More importantly, the pulse width-dependent and long-term transient current measurements further demonstrate a dynamic transition from a fast capacitive to a slow inductive response, allowing for the tailored stimulus programming of memristor devices to mimic synaptic functionality.
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Affiliation(s)
- Cedric Gonzales
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
| | - Agustín Bou
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
- Leibniz-Institute
for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
| | - Antonio Guerrero
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
| | - Juan Bisquert
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
- Instituto
de Tecnología Química (Universitat Politècnica
de València-Agencia Estatal Consejo Superior de Investigaciones
Científicas), Av. dels Tarongers, 46022, València, Spain
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2
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Khurana S, Yadav P, Natesan P, Hassan MS, Pradhan DK, Sapra S. Prevention of ion migration in lead halide perovskites upon plugging the anion vacancies with PbSe islands. Chem Commun (Camb) 2024; 60:6031-6034. [PMID: 38775062 DOI: 10.1039/d4cc01280a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
To circumvent the issue of halide ion exchange in perovskites, we have decorated CsPbBr3 and CsPbI3 nanocrystals with different sized PbSe nanoparticles and demonstrated that it effectively prevents anion exchange reaction in CsPbBr3/CsPbI3 nanoheterostructures (NHSs) as a consequence of halide vacancy passivation by the more covalent selenide anion.
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Affiliation(s)
- Swati Khurana
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
| | - Priyesh Yadav
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
| | - Priyadharsini Natesan
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
| | - Md Samim Hassan
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
| | - Deepak Kumar Pradhan
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
| | - Sameer Sapra
- Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
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3
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Dučinskas A, Jung M, Wang YR, Milić JV, Moia D, Grätzel M, Maier J. Mixed ionic-electronic conduction in Ruddlesden-Popper and Dion-Jacobson layered hybrid perovskites with aromatic organic spacers. JOURNAL OF MATERIALS CHEMISTRY. C 2024; 12:7909-7915. [PMID: 38855264 PMCID: PMC11154687 DOI: 10.1039/d4tc01010h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Accepted: 04/29/2024] [Indexed: 06/11/2024]
Abstract
The understanding of mixed ionic-electronic conductivity in hybrid perovskites has enabled major advances in the development of optoelectronic devices based on this class of materials. While recent investigations revealed the potential of using dimensionality effects for various applications, the implication of this strategy on mixed conductivity is yet to be established. Here, we present a systematic analysis of mixed conduction in layered (2D) hybrid halide perovskite films based on 1,4-phenylenedimethylammonium (PDMA) and benzylammonium (BzA) organic spacers in (PDMA)PbI4 and (BzA)2PbI4 compositions, forming representative Dion-Jacobson (DJ) and Ruddleson-Popper (RP) phases, respectively. Electrochemical measurements of charge transport parallel to the layered structure reveal mixed ionic-electronic conduction with electronic transport mediated by electron holes in both DJ and RP phases. In comparison to the 3D perovskites, larger activation energies for both ionic and electronic conductivities are observed which result in lower absolute values. While the layered perovskites still allow for a relatively efficient exchange of iodine with the gas phase, the lower change of conductivity on the variation of the iodine partial pressure compared with 3D perovskites is consistent with the exchange affecting only a fraction of the film, with implications for the encapsulating efficacy of these materials. We complement the analysis with a demonstration of the superior thermal stability of DJ structures compared to their RP counterparts. This can guide future explorations of dimensionality and composition to control the transport and stabilization properties of 2D perovskite films.
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Affiliation(s)
- Algirdas Dučinskas
- Laboratory of Photonics and Interfaces, École Polytechnique Fédéralé de Lausanne 1015 Lausanne Switzerland
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
| | - Mina Jung
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
| | - Ya-Ru Wang
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
| | - Jovana V Milić
- Laboratory of Photonics and Interfaces, École Polytechnique Fédéralé de Lausanne 1015 Lausanne Switzerland
- Adolphe Merkle Institute, University of Fribourg 1700 Fribourg Switzerland
| | - Davide Moia
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
| | - Michael Grätzel
- Laboratory of Photonics and Interfaces, École Polytechnique Fédéralé de Lausanne 1015 Lausanne Switzerland
| | - Joachim Maier
- Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany
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4
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Zhan C, Luo C, Gao F, Wang X, Li Y, Zhao Q. Indium Tin Oxide Induced Internal Positive Feedback and Indium Ion Transport in Perovskite Solar Cells. Angew Chem Int Ed Engl 2024:e202403824. [PMID: 38727541 DOI: 10.1002/anie.202403824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Indexed: 06/21/2024]
Abstract
Stability is the most pressing challenge hindering the commercialization of perovskite solar cells (PSCs), and previous efforts focused more on enhancing the resistance of PSCs to external stimulus. Here, we found that the indium tin oxide (ITO) will deteriorate the photovoltaic performance of PSCs through positive feedback cycles. Specifically, the perovskite degradation products will cross the electron transport layer to chemically etch the electrode ITO to generate In3+, which will migrate upwards into the perovskite film. Then, the reaction that corrodes ITO consumes the decomposition products of perovskite and shifts the balance of the perovskite decomposition reaction, further promoting the degradation and thus falling into a positive feedback cycle. Moreover, the In3+ in the perovskite film was found to accumulate at the upper surface, which would lead to n-type doping of perovskite film to form the energy barrier for interface carrier extraction. Subsequently, the chelating molecule ethylenediaminetetraacetic acid disodium salt (EDTA-2Na) was introduced onto ITO to firmly chelate the In3+ and prevent it from migrating upward, thus breaking this internal positive feedback cycle and significantly enhancing the efficiency and stability of PSCs. This work provides new perspectives for understanding the mechanism of photovoltaic performance loss and ionic transport in PSCs.
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Affiliation(s)
- Changling Zhan
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Chao Luo
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Feng Gao
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Xianjin Wang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yang Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Qing Zhao
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226000, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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5
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Duan J, Li J, Divitini G, Cortecchia D, Yuan F, You J, Liu SF, Petrozza A, Wu Z, Xi J. 2D Hybrid Perovskites: From Static and Dynamic Structures to Potential Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403455. [PMID: 38723249 DOI: 10.1002/adma.202403455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Revised: 04/29/2024] [Indexed: 05/22/2024]
Abstract
2D perovskites have received great attention recently due to their structural tunability and environmental stability, making them highly promising candidates for various applications by breaking property bottlenecks that affect established materials. However, in 2D perovskites, the complicated interplay between organic spacers and inorganic slabs makes structural analysis challenging to interpret. A deeper understanding of the structure-property relationship in these systems is urgently needed to enable high-performance tunable optoelectronic devices. Herein, this study examines how structural changes, from constant lattice distortion and variable structural evolution, modeled with both static and dynamic structural descriptors, affect macroscopic properties and ultimately device performance. The effect of chemical composition, crystallographic inhomogeneity, and mechanical-stress-induced static structural changes and corresponding electronic band variations is reported. In addition, the structure dynamics are described from the viewpoint of anharmonic vibrations, which impact electron-phonon coupling and the carriers' dynamic processes. Correlated carrier-matter interactions, known as polarons and acting on fine electronic structures, are then discussed. Finally, reliable guidelines to facilitate design to exploit structural features and rationally achieve breakthroughs in 2D perovskite applications are proposed. This review provides a global structural landscape of 2D perovskites, expected to promote the prosperity of these materials in emerging device applications.
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Affiliation(s)
- Jianing Duan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jingrui Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering & International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Giorgio Divitini
- Electron Spectroscopy and Nanoscopy, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Daniele Cortecchia
- Department of Industrial Chemistry "Toso Montanari", University of Bologna, Via Piero Gobetti 85, Bologna, 40129, Italy
- Center for Nano Science and Technology@Polimi, Istituto Italiano di Tecnologia, via Rubattino 81, Milano, 20134, Italy
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jiaxue You
- Department of Materials Science and Engineering, Hong Kong Institute for Clean Energy, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science & Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Annamaria Petrozza
- Center for Nano Science and Technology@Polimi, Istituto Italiano di Tecnologia, via Rubattino 81, Milano, 20134, Italy
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
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6
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Girolami M, Matteocci F, Pettinato S, Serpente V, Bolli E, Paci B, Generosi A, Salvatori S, Di Carlo A, Trucchi DM. Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors. NANO-MICRO LETTERS 2024; 16:182. [PMID: 38668830 PMCID: PMC11052987 DOI: 10.1007/s40820-024-01393-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Accepted: 03/08/2024] [Indexed: 04/29/2024]
Abstract
Metal-halide perovskites are revolutionizing the world of X-ray detectors, due to the development of sensitive, fast, and cost-effective devices. Self-powered operation, ensuring portability and low power consumption, has also been recently demonstrated in both bulk materials and thin films. However, the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours, often reporting degradation of the detection performance. Here it is shown that self-powered direct X-ray detectors, fabricated starting from a FAPbBr3 submicrometer-thick film deposition onto a mesoporous TiO2 scaffold, can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss, demonstrating ultra-high operational stability and excellent repeatability. No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy, revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film. In addition, trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy-1 cm-3 at 0 V, an unprecedented value in the field of thin-film-based photoconductors and photodiodes for "hard" X-rays. Finally, prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.
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Affiliation(s)
- Marco Girolami
- CNR-ISM, Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010, Montelibretti, Rome, Italy.
| | - Fabio Matteocci
- CHOSE - Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome ''Tor Vergata'', Via del Politecnico 1, 00133, Rome, Italy
| | - Sara Pettinato
- CNR-ISM, Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010, Montelibretti, Rome, Italy
- Faculty of Engineering, Università degli Studi Niccolò Cusano, Via don Carlo Gnocchi 3, 00166, Rome, Italy
| | - Valerio Serpente
- CNR-ISM, Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010, Montelibretti, Rome, Italy
| | - Eleonora Bolli
- CNR-ISM, Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010, Montelibretti, Rome, Italy
| | - Barbara Paci
- SpecXLab, CNR-ISM, Consiglio Nazionale Delle Ricerche, Istituto di Struttura Della Materia, Area della Ricerca di Tor Vergata, Via del Fosso del Cavaliere 100, 00133, Rome, Italy
| | - Amanda Generosi
- SpecXLab, CNR-ISM, Consiglio Nazionale Delle Ricerche, Istituto di Struttura Della Materia, Area della Ricerca di Tor Vergata, Via del Fosso del Cavaliere 100, 00133, Rome, Italy
| | - Stefano Salvatori
- CNR-ISM, Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010, Montelibretti, Rome, Italy
- Faculty of Engineering, Università degli Studi Niccolò Cusano, Via don Carlo Gnocchi 3, 00166, Rome, Italy
| | - Aldo Di Carlo
- CHOSE - Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome ''Tor Vergata'', Via del Politecnico 1, 00133, Rome, Italy
- SpecXLab, CNR-ISM, Consiglio Nazionale Delle Ricerche, Istituto di Struttura Della Materia, Area della Ricerca di Tor Vergata, Via del Fosso del Cavaliere 100, 00133, Rome, Italy
| | - Daniele M Trucchi
- CNR-ISM, Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010, Montelibretti, Rome, Italy
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7
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Fang J, Wang L, Chen Z, Wang S, Yuan L, Saeed A, Hussain I, Zhao J, Liu R, Miao Q. Sulfonic Acid Functionalized Ionic Liquids for Defect Passivation via Molecular Interactions for High-Quality Perovskite Films and Stable Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38652094 DOI: 10.1021/acsami.4c04762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
The high photoelectric conversion efficiency and low cost of perovskite solar cells (PSCs) have further inspired people's determination to push this technology toward industrialization. The high-quality perovskite films and high-efficiency and stable PSCs are the crucial factors. Ionic liquids have been proven to be an effective strategy for regulating high-quality perovskite films and high-performance PSCs. However, the regulation mechanism between ionic liquids and perovskites still needs further clarification. In this study, a novel sulfonic acid-functionalized ionic liquid, 1-butyl-3-methylimidazolium trifluoromethanesulfonate (BSO3HMImOTf), was used as an effective additive to regulate high-quality perovskite films and high-performance devices. Microscopic mechanism studies revealed strong interactions between BSO3HMImOTf and Pb2+ ions as well as halogens in the perovskite. The perovskite film is effectively passivated with the controlled crystal growth, suppressed ion migration, facilitating to the greatly improved photovoltaic performance, and superior long-term stability. This article reveals the regulatory mechanism of sulfonic acid type ionic liquids through testing characterization and mechanism analysis, providing a new approach for the preparation of high-quality perovskite devices.
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Affiliation(s)
- Junhui Fang
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450003, PR China
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
| | - Liang Wang
- Info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo 182-8585, Japan
| | - Zhaoyang Chen
- Longzihu New Energy Laboratory, Zhengzhou Institute of Emerging Industrial Technology, Henan University, Zhengzhou 450000, PR China
| | - Shuai Wang
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
| | - Lin Yuan
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
| | - Aamir Saeed
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
| | - Iqbal Hussain
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
| | - Jianwei Zhao
- Shenzhen Huasuan Technology Co. Ltd., Shenzhen 518055, PR China
| | - Ruixia Liu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450003, PR China
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
| | - Qingqing Miao
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences (CAS), Beijing 100190, PR China
- Longzihu New Energy Laboratory, Zhengzhou Institute of Emerging Industrial Technology, Henan University, Zhengzhou 450000, PR China
- Langfang Green Industrial Technology Center, Langfang 065001, PR China
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8
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Joy S, Hossain T, Tichy A, Johnson S, Graham KR. Defect Modulation via SnX 2 Additives in FASnI 3 Perovskite Solar Cells. J Phys Chem Lett 2024; 15:3851-3858. [PMID: 38557111 DOI: 10.1021/acs.jpclett.4c00505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Tin halide perovskites suffer from high defect densities compared with their lead counterparts. To decrease defect densities, SnF2 is commonly used as an additive in tin halide perovskites. Herein, we investigate how SnF2 compares to other SnX2 additives (X = F, Cl, Br) in terms of electronic and ionic defect properties in FASnI3. We find that FASnI3 films with SnF2 show the lowest Urbach energies (EU) of 19 meV and a decreased p-type character, as probed with ultraviolet photoemission spectroscopy. The activation energy of ion migration, as probed with thermal admittance spectroscopy, for FASnI3 with SnF2 is 1.33 eV, which is higher than with SnCl2 and SnBr2, which are 1.22 and 0.79 eV, respectively, resulting in less ion migration. Because of improved defect passivation, the champion power conversion efficiency of FASnI3 with SnF2 is 7.47% and only 1.84% and 1.20% with SnCl2 and SnBr2, respectively.
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Affiliation(s)
- Syed Joy
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Tareq Hossain
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Adam Tichy
- Department of Physics, Transylvania University, Lexington, Kentucky 40508, United States
| | - Stephen Johnson
- Department of Physics, Transylvania University, Lexington, Kentucky 40508, United States
| | - Kenneth R Graham
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
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9
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Tang YY, Shen Y, Yu Y, Zhang K, Wang BF, Tang JX, Li YQ. Comprehensive Crystal Regulation Reduces Interfacial Energy Loss for Efficient Blue Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309309. [PMID: 38016075 DOI: 10.1002/smll.202309309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 11/08/2023] [Indexed: 11/30/2023]
Abstract
As an essential component of future full-color displays, blue perovskite light-emitting diodes (PeLEDs) still lag far behind the red and green counterparts in the device performances. In the mainstream quasi-2D blue perovskite system, trap-mediated nonradiative loss, low energy transfer efficiency, and interface fluorescence quenching remain significant challenges. Herein, guanidinium thiocyanate (GASCN) and potassium cinnamate (PCA) are respectively introduced into the hole transport layer (HTL) and the perovskite precursor to achieve a dense and uniform perovskite thin film with greatly improved optoelectronic properties. Therefore, adequate GA+ acts as pre-nucleation sites on the HTL surface, regulating crystallization through strong hydrogen bonding with perovskite intermediates. The realized polydisperse domain distribution is conducive to cascade energy transfer, and the improved hole transport ability alleviates interface fluorescence quenching. In addition, the SCN- and CA- groups can form coordination bonds with the defects at the buried perovskite interface and grain boundaries, respectively, which effectively suppresses the detrimental nonradiative recombination. Benefitting from the comprehensive crystal regulation, blue PeLEDs featuring stable emission at 484 and 468 nm exhibit improved external quantum efficiencies of 11.5% and 4.3%, respectively.
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Affiliation(s)
- Ying-Yi Tang
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Yang Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Yi Yu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Kai Zhang
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macau, 999078, China
| | - Bing-Feng Wang
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Jian-Xin Tang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macau, 999078, China
| | - Yan-Qing Li
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
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10
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Jain M, Patel MJ, Liu L, Gosai J, Khemnani M, Gogoi HJ, Chee MY, Guerrero A, Lew WS, Solanki A. Insights into synaptic functionality and resistive switching in lead iodide flexible memristor devices. NANOSCALE HORIZONS 2024; 9:438-448. [PMID: 38259176 DOI: 10.1039/d3nh00505d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Neuromorphic platforms are gaining popularity due to their superior efficiency, low power consumption, and adaptable parallel signal processing capabilities, overcoming the limitations of traditional von Neumann architecture. We conduct an in-depth investigation into the factors influencing the resistive switching mechanism in memristor devices utilizing lead iodide (PbI2). We establish correlations between device performance and morphological features, unveiling synaptic like behaviour of device making it suitable for range of flexible neuromorphic applications. Notably, a highly reliable unipolar switching mechanism is identified, exhibiting stability even under mechanical strain (with a bending radius of approximately 4 mm) and in high humidity environment (at 75% relative humidity) without the need for encapsulation. The investigation delves into the complex interplay of charge transport, ion migration and the active interface, elucidating the factors contributing to the remarkable resistive switching observed in PbI2-based memristors. The detailed findings highlight synaptic behaviors akin to the modulation of synaptic strengths, with an impressive potentiation and depression of 2 × 104 cycles, emphasizing the role of spike time-dependent plasticity (STDP). The flexible platform demonstrates exceptional performance, achieving a simulated accuracy rate of 95.06% in recognizing modified patterns from the National Institute of Standards and Technology (MNIST) dataset with just 30 training epochs. Ultimately, this research underscores the potential of PbI2-based flexible memristor devices as versatile component for neuromorphic computing. Moreover, it demonstrate the robustness of PbI2 memristors in terms of their resistive switching capabilities, showcasing resilience both mechanically and electrically. This underscores their potential in replicating synaptic functions for advanced information processing systems.
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Affiliation(s)
- Muskan Jain
- Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India.
- Flextronics Lab, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India
| | - Mayur Jagdishbhai Patel
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
| | - Lingli Liu
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Jeny Gosai
- Flextronics Lab, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India
- Department of Chemistry, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India
| | - Manish Khemnani
- Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India.
- Flextronics Lab, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India
| | - Himangshu Jyoti Gogoi
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, 781039 Assam, India
| | - Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Antonio Guerrero
- Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castello, Spain
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Ankur Solanki
- Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Raysan, Gandhinagar 382426, India.
- Flextronics Lab, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India
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11
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Fausia K, Nharangatt B, Vinayakan RN, Ramesh AR, Santhi V, Dhandapani KR, Manoj TP, Chatanathodi R, Jose D, Sandeep K. Probing the Structural Degradation of CsPbBr 3 Perovskite Nanocrystals in the Presence of H 2O and H 2S: How Weak Interactions and HSAB Matter. ACS OMEGA 2024; 9:8417-8424. [PMID: 38405449 PMCID: PMC10882691 DOI: 10.1021/acsomega.3c09600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 01/06/2024] [Accepted: 01/11/2024] [Indexed: 02/27/2024]
Abstract
Structural degradation of all inorganic CsPbBr3 in the presence of moisture is considered as one of its major limitations to use as an active component in various light-harvesting and light-emitting devices. Herein, we used two similar molecules, H2O and H2S, with similar structures, to follow the decomposition mechanism of CsPbBr3 perovskite nanocrystals. Interestingly, H2O acts as a catalyst for the decomposition of CsPbBr3, which is in contrast to H2S. Our experimental observations followed by density functional theory (DFT) calculations showed that the water molecule is intercalated in the CsPbBr3 perovskite whereas H2S is adsorbed in the (100) planes of CsPbBr3 by a weak electrostatic interaction. According to Pearson's hard-soft acid-base theory, both cations present in CsPbBr3 prefer soft/intermediate bases. In the case of the water molecule, it lacks a soft base and thus it is not directly involved in the reaction whereas H2S can provide a soft base and thus it gets involved in the reaction. Understanding the mechanistic aspects of decomposition can give different methodologies for preventing such unwanted reactions.
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Affiliation(s)
- Karayadi
H. Fausia
- Government
Victoria College, Research Center under
University of Calicut, Palakkad 678001, India
| | - Bijoy Nharangatt
- Department
of Physics, National Institute of Technology, Calicut, Kerala 673601, India
| | | | - Analiparambil R. Ramesh
- Government
Victoria College, Research Center under
University of Calicut, Palakkad 678001, India
| | - Vijayan Santhi
- Government
Victoria College, Research Center under
University of Calicut, Palakkad 678001, India
| | - Kuppathil R. Dhandapani
- Government
Victoria College, Research Center under
University of Calicut, Palakkad 678001, India
| | | | - Raghu Chatanathodi
- Department
of Physics, National Institute of Technology, Calicut, Kerala 673601, India
| | - Deepthi Jose
- Department
of Chemistry, Providence Women’s
College, Calicut 673009, India
| | - Kulangara Sandeep
- Government
Victoria College, Research Center under
University of Calicut, Palakkad 678001, India
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12
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Lei Y, Liu W, Li C, Da S, Zheng Y, Wu Y, Ran F. Microstress for metal halide perovskite solar cells: from source to influence and management. NANOSCALE 2024; 16:2765-2788. [PMID: 38258472 DOI: 10.1039/d3nr05264h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
The power conversion efficiency of metal halide perovskite solar cells (PSCs) has increased dramatically in recent years, but there are still major bottlenecks in the commercial application of such materials, including intrinsic instability caused by external stimuli such as water, oxygen, and radiation, as well as local stress generated inside the perovskite and external stress caused by poor interlayer contact. However, some crucial sources of instability cannot be overcome by conventional encapsulation engineering. Among them, the tensile strain can weaken the chemical bonds in the perovskite lattice, thereby reducing the defects formation energy and activation energy of ion migration and accelerating the degradation rate of the perovskite crystal. This review expounds the latest in-depth understanding of microstrain in perovskite film from the thermodynamic sources and influences on the perovskite physicochemical structure and photoelectric performance. Furthermore, it also summarizes the effective strategies for strain regulation and interlayer contact performance improvement, which are conducive to the improvement of photovoltaic performance and internal stability of PSCs. Finally, we present a prospective outlook on how to achieve more stable and higher efficiency PSCs through strain engineering.
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Affiliation(s)
- Yixiao Lei
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
| | - Wenwu Liu
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
| | - Caixia Li
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
| | - Shiji Da
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
| | - Yawen Zheng
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
| | - Youzhi Wu
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
| | - Fen Ran
- State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, Gansu, China.
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13
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Niu K, Wang C, Zeng J, Wang Z, Liu Y, Wang L, Li C, Jin Y. Ion Migration in Lead-Halide Perovskites: Cation Matters. J Phys Chem Lett 2024; 15:1006-1018. [PMID: 38298156 DOI: 10.1021/acs.jpclett.3c03451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Metal halide perovskites exhibit remarkable properties for optoelectronic applications, yet their susceptibility to ion migration poses challenges for device stability. Previous research has predominantly focused on the migration of the halide ions. However, the migration of cations, which also has a significant influence on the device performance, is largely overlooked. In this Perspective, we review the migration of cations and their impacts on perovskite materials and devices. Special attention shall be devoted to recent insights into the migration of L-site organic cations in 2D/3D perovskites. We outline inspirations and directions for further research into the cation migration of perovskites, highlighting new possibilities in advancing perovskite optoelectronics.
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Affiliation(s)
- Kai Niu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310058, China
| | - Chenyang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310058, China
| | - Jiejun Zeng
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, School of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zirui Wang
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310058, China
| | - Yang Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310058, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Linjun Wang
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310058, China
| | - Cheng Li
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Yizheng Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310058, China
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14
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Blom Y, Ruben Vogt M, Isabella O, Santbergen R. Method for bandgap interpolation of perovskite's spectral complex refractive index. OPTICS EXPRESS 2024; 32:4365-4375. [PMID: 38297639 DOI: 10.1364/oe.509982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 01/11/2024] [Indexed: 02/02/2024]
Abstract
Lead halide perovskites are a promising class of materials for solar cell applications. The perovskite bandgap depends on the material composition and is highly tunable. Opto-electrical device modelling is commonly used to find the optimum perovskite bandgap that maximizes device efficiency or energy yield, either in single junction or multi-junction configuration. The first step in this calculation is the optical modelling of the spectral absorptance. This requires as input the perovskite's complex refractive index N as a function of wavelength λ. The complex refractive index consists of real part n(λ) and imaginary part k(λ). For the most commonly used perovskites, n and k curves are available from spectroscopic ellipsometry measurements, but usually only for a few discrete bandgap energies. For solar cell optimization, these curves are required for a continuous range of bandgap energies. We introduce new methods for generating the n and k curves for an arbitrary bandgap, based on interpolating measured complex refractive index data. First, different dispersion models (Cody-Lorentz, Ullrich-Lorentz and Forouhi-Bloomer) are used to fit the measured data. Then, a linear regression is applied to the fit parameters with respect to the bandgap energy. From the interpolated parameters, the refractive index curve of perovskite with any desired bandgap energy is finally reconstructed. To validate our method, we compare our results with methods from literature and then use it to simulate the absorptance of a single junction perovskite and a perovskite/silicon tandem cell. This shows that our method based on the Forouhi-Bloomer model is more accurate than existing methods in predicting the complex refractive index of perovskite for arbitrary bandgaps.
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15
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Clinckemalie L, Pradhan B, Brande RV, Zhang H, Vandenwijngaerden J, Saha RA, Romolini G, Sun L, Vandenbroucke D, Bonn M, Wang HI, Debroye E. Phase-engineering compact and flexible CsPbBr 3 microcrystal films for robust X-ray detection. JOURNAL OF MATERIALS CHEMISTRY. C 2024; 12:655-663. [PMID: 38188498 PMCID: PMC10766070 DOI: 10.1039/d3tc01903a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 12/08/2023] [Indexed: 01/09/2024]
Abstract
All-inorganic CsPbBr3 perovskites have gained significant attention due to their potential in direct X-ray detection. The fabrication of stable, pinhole-free thick films remains challenging, hindering their integration in durable, large-area high-resolution devices. In this study, we propose a facile strategy using a non-conductive polymer to create a flexible, compact thick film under ambient conditions. Furthermore, we investigate the effect of introducing the 2D CsPb2Br5 phase into CsPbBr3 perovskite crystals on their photophysical properties and charge transport. Upon X-ray exposure, the devices consisting of the dual phase exhibit improved stability and more effective operation at higher voltages. Rietveld refinement shows that, due to the presence of the second phase, local distortions and Pb-vacancies are introduced within the CsPbBr3 lattice. This in turn presumably increases the ion migration energy barrier, resulting in a very low dark current and hence, enhanced stability. This feature might benefit local charge extraction and, ultimately, the X-ray image resolution. These findings also suggest that introducing a second phase in the perovskite structure can be advantageous for efficient photon-to-charge carrier conversion, as applied in medical imaging.
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Affiliation(s)
- Lotte Clinckemalie
- Department of Chemistry, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
| | - Bapi Pradhan
- Department of Chemistry, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
| | - Roel Vanden Brande
- Department of Chemistry, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
| | - Heng Zhang
- Max Planck Institute for Polymer Research 55128 Mainz Germany
| | | | - Rafikul Ali Saha
- cMACS, Department of Microbial and Molecular Systems, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
| | - Giacomo Romolini
- Department of Chemistry, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
| | - Li Sun
- Department of Chemistry, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
| | | | - Mischa Bonn
- Max Planck Institute for Polymer Research 55128 Mainz Germany
| | - Hai I Wang
- Max Planck Institute for Polymer Research 55128 Mainz Germany
| | - Elke Debroye
- Department of Chemistry, KU Leuven Celestijnenlaan 200F 3001 Leuven Belgium
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16
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Yudco S, Bisquert J, Etgar L. Enhanced LED Performance by Ion Migration in Multiple Quantum Well Perovskite. J Phys Chem Lett 2023; 14:11610-11617. [PMID: 38100371 PMCID: PMC11163466 DOI: 10.1021/acs.jpclett.3c02822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/28/2023] [Accepted: 12/12/2023] [Indexed: 12/17/2023]
Abstract
Here we study the effect of ion migration on the performance of perovskite light emitting diodes (PeLEDs). We compared aromatic and linear barrier molecules in Ruddlesden-Popper and Dion-Jacobson two-dimensional perovskites having multiple quantum well (MQW) structures. PeLED devices were fabricated by using the same conditions and architecture, while their electroluminescence properties and ion migration behavior were investigated. Impedance spectroscopy measurements were used to analyze the PeLEDs, which found a direct link between the barrier molecule type, the device efficiency, and ion migration. The best performing LEDs were based on the aromatic barriers, which present dominant inductive impedance, indicating an earlier onset voltage of radiative recombination. These findings present an approach of how to control radiative emission in perovskite LEDs which opens the way for further improvement in PeLEDs and memristors.
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Affiliation(s)
- Shir Yudco
- Institute
of Chemistry, Casali Center for Applied Chemistry and the Center for
Nanoscience and Nanotechnology, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
| | - Juan Bisquert
- Institute
of Advanced Materials (INAM), Universitat
Jaume I, 12006 Castelló, Spain
| | - Lioz Etgar
- Institute
of Chemistry, Casali Center for Applied Chemistry and the Center for
Nanoscience and Nanotechnology, The Hebrew
University of Jerusalem, Jerusalem 91904, Israel
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17
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Zhong Y, Yang J, Wang X, Liu Y, Cai Q, Tan L, Chen Y. Inhibition of Ion Migration for Highly Efficient and Stable Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302552. [PMID: 37067957 DOI: 10.1002/adma.202302552] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 04/13/2023] [Indexed: 06/19/2023]
Abstract
In recent years, organic-inorganic halide perovskites are now emerging as the most attractive alternatives for next-generation photovoltaic devices, due to their excellent optoelectronic characteristics and low manufacturing cost. However, the resultant perovskite solar cells (PVSCs) are intrinsically unstable owing to ion migration, which severely impedes performance enhancement, even with device encapsulation. There is no doubt that the investigation of ion migration and the summarization of recent advances in inhibition strategies are necessary to develop "state-of-the-art" PVSCs with high intrinsic stability for accelerated commercialization. This review systematically elaborates on the generation and fundamental mechanisms of ion migration in PVSCs, the impact of ion migration on hysteresis, phase segregation, and operational stability, and the characterizations for ion migration in PVSCs. Then, many related works on the strategies for inhibiting ion migration toward highly efficient and stable PVSCs are summarized. Finally, the perspectives on the current obstacles and prospective strategies for inhibition of ion migration in PVSCs to boost operational stability and meet all of the requirements for commercialization success are summarized.
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Affiliation(s)
- Yang Zhong
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Jia Yang
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Xueying Wang
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Yikun Liu
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Qianqian Cai
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Licheng Tan
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
| | - Yiwang Chen
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- National Engineering Research Center for Carbohydrate Synthesis/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang, 330022, China
- College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou, 341000, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
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18
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Kumar R, Bag M, Jain SM. Dual-edged sword of ion migration in perovskite materials for simultaneous energy harvesting and storage application. iScience 2023; 26:108172. [PMID: 37927552 PMCID: PMC10622710 DOI: 10.1016/j.isci.2023.108172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2023] Open
Abstract
Portable electronic devices and Internet of Things (IoT) require an uninterrupted power supply for their optimum performance and are key ingredients of the futuristic smart buildings - cities. The off-grid photovoltaic cells and photo-rechargeable energy storage devices meet the requirements for continuous data processing and transmission. In addition, these off-grid devices can solve the energy mismanagement problem famously called as "duck curve". The conventional approach is the external integration of a photovoltaic cell and an energy storage device through a complex multi-layered structure. However, this approach causes ohmic transport losses and requires additional complex device packaging leading to increased weight and high cost. Toward this narrative, in this viewpoint, we shed light on application of disruptive organic-inorganic hybrid halide perovskite bifunctional materials employed as smart photo-rechargeable energy devices. We also present hybrid halide lead-free perovskite materials for off-grid energy storage systems for indoor lighting applications.
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Affiliation(s)
- Ramesh Kumar
- Center for Renewable and Low Carbon Energy, School of Water, Energy and Environment (SWEE), Cranfield University, Cranfield MK430AL, UK
- Department of Chemistry, Ångström Laboratory, Uppsala University, Box 523, 75120 Uppsala, SE, Sweden
- Advanced Research in Electrochemical Impedance Spectroscopy (AREIS) Laboratory, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Monojit Bag
- Advanced Research in Electrochemical Impedance Spectroscopy (AREIS) Laboratory, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Sagar M. Jain
- Center for Renewable and Low Carbon Energy, School of Water, Energy and Environment (SWEE), Cranfield University, Cranfield MK430AL, UK
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19
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Tang Y, Jin P, Wang Y, Li D, Chen Y, Ran P, Fan W, Liang K, Ren H, Xu X, Wang R, Yang YM, Zhu B. Enabling low-drift flexible perovskite photodetectors by electrical modulation for wearable health monitoring and weak light imaging. Nat Commun 2023; 14:4961. [PMID: 37587158 PMCID: PMC10432415 DOI: 10.1038/s41467-023-40711-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 08/07/2023] [Indexed: 08/18/2023] Open
Abstract
Metal halide perovskites are promising for next-generation flexible photodetectors owing to their low-temperature solution processability, mechanical flexibility, and excellent photoelectric properties. However, the defects and notorious ion migration in polycrystalline metal halide perovskites often lead to high and unstable dark current, thus deteriorating their detection limit and long-term operations. Here, we propose an electrical field modulation strategy to significantly reduce the dark current of metal halide perovskites-based flexible photodetector more than 1000 times (from ~5 nA to ~5 pA). Meanwhile, ion migration in metal halide perovskites is effectively suppressed, and the metal halide perovskites-based flexible photodetector shows a long-term continuous operational stability (~8000 s) with low signal drift (~4.2 × 10-4 pA per second) and ultralow dark current drift (~1.3 × 10-5 pA per second). Benefitting from the electrical modulation strategy, a high signal-to-noise ratio wearable photoplethysmography sensor and an active-matrix photodetector array for weak light imaging are successfully demonstrated. This work offers a universal strategy to improve the performance of metal halide perovskites for wearable flexible photodetector and image sensor applications.
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Affiliation(s)
- Yingjie Tang
- College of Information Science and Electronic Engineering, Zhejiang University, 310027, Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Peng Jin
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, 310007, Hangzhou, Zhejiang, China
| | - Yan Wang
- College of Information Science and Electronic Engineering, Zhejiang University, 310027, Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Dingwei Li
- College of Information Science and Electronic Engineering, Zhejiang University, 310027, Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Yitong Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Peng Ran
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, 310007, Hangzhou, Zhejiang, China
| | - Wei Fan
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Kun Liang
- College of Information Science and Electronic Engineering, Zhejiang University, 310027, Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Huihui Ren
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Xuehui Xu
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, 310007, Hangzhou, Zhejiang, China
| | - Rui Wang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 310024, Hangzhou, China
| | - Yang Michael Yang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, 310007, Hangzhou, Zhejiang, China.
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China.
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 310024, Hangzhou, China.
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20
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Li Y, Lei Y, Wang H, Jin Z. Two-Dimensional Metal Halides for X-Ray Detection Applications. NANO-MICRO LETTERS 2023; 15:128. [PMID: 37209282 PMCID: PMC10199999 DOI: 10.1007/s40820-023-01118-1] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Accepted: 04/24/2023] [Indexed: 05/22/2023]
Abstract
Metal halide perovskites have recently emerged as promising candidates for the next generation of X-ray detectors due to their excellent optoelectronic properties. Especially, two-dimensional (2D) perovskites afford many distinct properties, including remarkable structural diversity, high generation energy, and balanced large exciton binding energy. With the advantages of 2D materials and perovskites, it successfully reduces the decomposition and phase transition of perovskite and effectively suppresses ion migration. Meanwhile, the existence of a high hydrophobic spacer can block water molecules, thus making 2D perovskite obtain excellent stability. All of these advantages have attracted much attention in the field of X-ray detection. This review introduces the classification of 2D halide perovskites, summarizes the synthesis technology and performance characteristics of 2D perovskite X-ray direct detector, and briefly discusses the application of 2D perovskite in scintillators. Finally, this review also emphasizes the key challenges faced by 2D perovskite X-ray detectors in practical application and presents our views on its future development.
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Affiliation(s)
- Yumin Li
- School of Physical Science and Technology and Lanzhou Center for Theoretical Physics and Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, People's Republic of China
| | - Yutian Lei
- School of Physical Science and Technology and Lanzhou Center for Theoretical Physics and Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, People's Republic of China
| | - Haoxu Wang
- School of Physical Science and Technology and Lanzhou Center for Theoretical Physics and Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, People's Republic of China
| | - Zhiwen Jin
- School of Physical Science and Technology and Lanzhou Center for Theoretical Physics and Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, People's Republic of China.
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21
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Xue Z, Xu Y, Jin C, Liang Y, Cai Z, Sun J. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. NANOSCALE 2023; 15:4653-4668. [PMID: 36805124 DOI: 10.1039/d2nr06403k] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.
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Affiliation(s)
- Zhengyang Xue
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yihuan Liang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Zihao Cai
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
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22
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Gonzales C, Guerrero A. Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process. J Phys Chem Lett 2023; 14:1395-1402. [PMID: 36738280 PMCID: PMC9940207 DOI: 10.1021/acs.jpclett.2c03669] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Accepted: 01/18/2023] [Indexed: 06/18/2023]
Abstract
With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resistive switching set process involving a complex interplay among mobile halide ions/vacancies (I-/VI+) and silver ions (Ag+) in perovskite-based memristors with thin undoped buffer layers. The resistive switching involves an initial gradual increase in current associated with a drift-related halide migration within the perovskite bulk layer followed by an abrupt resistive switching associated with diffusion of mobile Ag+ conductive filamentary formation. Furthermore, we develop a dynamical model that explains the characteristic I-V curve that helps to untangle and quantify the switching regimes consistent with the experimental memristive response. This further insight into the two-step set process provides another degree of freedom in device design for versatile applications with varying levels of complexity.
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23
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John RA, Milozzi A, Tsarev S, Brönnimann R, Boehme SC, Wu E, Shorubalko I, Kovalenko MV, Ielmini D. Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexity. SCIENCE ADVANCES 2022; 8:eade0072. [PMID: 36563153 PMCID: PMC9788778 DOI: 10.1126/sciadv.ade0072] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 11/04/2022] [Indexed: 06/17/2023]
Abstract
With increasing computing demands, serial processing in von Neumann architectures built with zeroth-order complexity digital circuits is saturating in computational capacity and power, entailing research into alternative paradigms. Brain-inspired systems built with memristors are attractive owing to their large parallelism, low energy consumption, and high error tolerance. However, most demonstrations have thus far only mimicked primitive lower-order biological complexities using devices with first-order dynamics. Memristors with higher-order complexities are predicted to solve problems that would otherwise require increasingly elaborate circuits, but no generic design rules exist. Here, we present second-order dynamics in halide perovskite memristive diodes (memdiodes) that enable Bienenstock-Cooper-Munro learning rules capturing both timing- and rate-based plasticity. A triplet spike timing-dependent plasticity scheme exploiting ion migration, back diffusion, and modulable Schottky barriers establishes general design rules for realizing higher-order memristors. This higher order enables complex binocular orientation selectivity in neural networks exploiting the intrinsic physics of the devices, without the need for complicated circuitry.
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Affiliation(s)
- Rohit Abraham John
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Zürich CH-8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Alessandro Milozzi
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano 20133, Italy
| | - Sergey Tsarev
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Zürich CH-8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Rolf Brönnimann
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Simon C. Boehme
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Zürich CH-8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Erfu Wu
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Ivan Shorubalko
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Maksym V. Kovalenko
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, Zürich CH-8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
| | - Daniele Ielmini
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano 20133, Italy
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