Band Nesting Bypass in WS2 Monolayers via Förster Resonance Energy Transfer

Defect-Mediated Exciton Localization and Relaxation in Monolayer MoS2

Defects in chemical vapor deposition (CVD)-grown monolayer MoS2 are unavoidable and provide a powerful approach to creating single-photon emitters and quantum information systems through localizing excitons. However, insight into the A- trion and B/C exciton localization in monolayer MoS2 remains elusive. Here, we investigate defect-mediated A- trion and B/C exciton localization and relaxation in CVD-grown monolayer MoS2 samples via transient absorption spectroscopy. The localization rate of A- trions is five times faster than B excitons, which is attributed to the distinctions in the Bohr radius, diffusion rate, and multiphonon emission. Furthermore, we obtain unambiguous experimental evidence for the direct excitation of localized C excitons. Varying gap energy at the band-nesting region revealed by first-principles calculations explains the anomalous dependence of localized C exciton energy on delay time. We also find that the rapid dissociation of localized C excitons features a short characteristic time of ∼0.14 ps, while the measured relaxation time is much longer. Our results provide a comprehensive picture of the defect-mediated excitonic relaxation and localization dynamics in monolayer MoS2.

Optical Introduction and Manipulation of Plasmon-Exciton-Trion Coupling in a Si/WS2/Au Nanocavity

Strong plasmon-exciton coupling, which has potential applications in nanophotonics, plasmonics, and quantum electrodynamics, has been successfully demonstrated by using metallic nanocavities and two-dimensional materials. Dynamical control of plasmon-exciton coupling strength, especially by using optical methods, remains a big challenge although it is highly desirable. Here, we report the optical introduction and manipulation of plasmon-exciton-trion coupling realized in a dielectric-metal hybrid nanocavity, which is composed of a silicon (Si) nanoparticle and a thin gold (Au) film, with an embedded tungsten disulfide (WS₂) monolayer. We employ scattering and photoluminescence spectra to characterize the coupling strength between plasmons and excitons in Si/WS₂/Au nanocavities constructed by using Si nanoparticles with different diameters. We enhance the plasmon-exciton and plasmon-trion coupling strength by injecting excitons and trions into the WS₂ monolayer with a 488 nm laser beam. It is revealed that the emission intensities of excitons and trions with respect to the reference WS₂ monolayer can be modified through the change in the coupling strength induced by the laser light. Interestingly, the coupling strength between the plasmons and the excitons/trions can be manipulated from weak to strong coupling regime by simply increasing the laser power, which is clearly resolved in the scattering spectra of Si/WS₂/Au nanocavities. More importantly, the plasmon-exciton-trion coupling induced by the laser light is confirmed by the energy exchange between excitons and trions. Our findings indicate the possibility for optically manipulating plasmon-exciton interaction and suggest the practical applications of dielectric-metal hybrid nanocavities in nanoscale plasmonic devices.

Celebrating 25 Years of IMRE: Research Highlights on Nanomaterials and Nanotechnologies

The Institute of Materials Research and Engineering (IMRE) is a research institute of the Science and Engineering Research Council (SERC), Agency for Science, Technology and Research (A*STAR). IMRE was established in September 1997. Over the past 25 years, IMRE has developed core competencies and interdisciplinary teams for material development from fundamental discoveries to industrial translation. Currently, with over 400 researchers and state-of-the-art research facilities, IMRE conducts world class research in important material and material technology fields, including polymer composites, optical materials, electronic materials, soft materials, structural materials, energy materials, biomaterials, quantum technologies, as well as advanced characterization. As a material-centered research institute in Singapore, IMRE has played important roles in pushing science boundaries and developing cutting-edge technologies. One of the key strategies is to partner international organizations, research institutes, and industry to fulfill its vision to be a leading research institute to accelerate materials research, moving from "Made in Singapore" toward "Created in Singapore".

Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS2 Monolayer

Transition-metal dichalcogenides exhibit strong photon absorption characteristics in the band nesting region (denoted as C-exciton) due to intrinsic van Hove singularities despite being atomically thin. However, because of unique parallel band structure and ineluctably unfavorable recombination process, only a small fraction of the hot carriers from C-excitons are converted into optically active band-edge excitons via inherent relaxation-paths. The resultant photoluminescence quantum yield (PLQY) is severely suppressed for the resonant excitation of C-exciton. To overcome this limitation, we have designed double type-I band alignments to construct a band nesting bypass in a monolayer WS₂/CdS quantum dot heterostructure for cooling the C-excitons. Transient optical measurements confirmed that the hot carriers from the C-excitons were effectively transferred from WS₂ to CdS with an efficiency of 50% and subsequently back to the WS₂ band-edge to form A-excitons over an ultrafast subpicosecond time scale, accompanied by a record high PLQY of ∼11.1% for near-resonance C-exciton excitation.