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Chuang HJ, Stevens CE, Rosenberger MR, Lee SJ, McCreary KM, Hendrickson JR, Jonker BT. Enhancing Single Photon Emission Purity via Design of van der Waals Heterostructures. NANO LETTERS 2024; 24:5529-5535. [PMID: 38668677 DOI: 10.1021/acs.nanolett.4c00683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2024]
Abstract
Quantum emitters are essential components of quantum photonic circuitry envisioned beyond the current optoelectronic state-of-the-art. Two dimensional materials are attractive hosts for such emitters. However, the high single photon purity required is rarely realized due to the presence of spectrally degenerate classical light originating from defects. Here, we show that design of a van der Waals heterostructure effectively eliminates this spurious light, resulting in purities suitable for a variety of quantum technological applications. Single photon purity from emitters in monolayer WSe2 increases from 60% to 92% by incorporating this monolayer in a simple graphite/WSe2 heterostructure. Fast interlayer charge transfer quenches a broad photoluminescence background by preventing radiative recombination through long-lived defect bound exciton states. This approach is generally applicable to other 2D emitter materials, circumvents issues of material quality, and offers a path forward to achieve the ultrahigh single photon purities ultimately required for photon-based quantum technologies.
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Affiliation(s)
- Hsun-Jen Chuang
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Christopher E Stevens
- KBR Inc., Beavercreek, Ohio 45431, United States
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | | | - Sung-Joon Lee
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Berend T Jonker
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
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Cao ZL, Guo XH, Yao KL, Zhu L. Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe 2/MoSe 2/NbSe 2 heterojunction. NANOSCALE 2023; 15:17029-17035. [PMID: 37846516 DOI: 10.1039/d3nr04514e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
Due to the ability to reduce the gate length of field-effect transistors (FETs) down to sub-10 nm without obviously affecting the performance of the device, the utilization of two-dimensional (2D) semiconductor materials as channel materials for FETs is of great interest. However, in-plane 2D/2D heterojunction FETs have received less attention in previous studies than vertical van der Waals heterojunction devices. Based on the above reasons, this study has investigated the transport properties of an in-plane NbSe2/MoSe2/NbSe2 heterojunction FET with different gate lengths by using ab initio quantum transport simulation. The results reveal that a gate length of sub-9 nm gives the device a low subthreshold swing down to 62 mV dec-1 and a high on-state current up to 1040 μA μm-1. Most importantly, the on-state current, delay time, and power dissipation of the FET with the optimized channel length can nearly meet or even exceed the high-performance and low-power requirements of the International Technology Roadmap for Semiconductors. The findings for this FET can provide the design and development guidance for other in-plane heterojunction electrical devices in the post-Moore era.
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Affiliation(s)
- Zeng-Lin Cao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Xiao-Hui Guo
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Kai-Lun Yao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Lin Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
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3
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Wu B, Zheng H, Li S, Wang CT, Ding J, He J, Liu Z, Wang JT, Liu Y. Enhanced Homogeneity of Moiré Superlattices in Double-Bilayer WSe 2 Homostructure. ACS APPLIED MATERIALS & INTERFACES 2023; 15:48475-48484. [PMID: 37796741 DOI: 10.1021/acsami.3c06949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/07/2023]
Abstract
Moiré superlattices have emerged as a promising platform for investigating and designing optically generated excitonic properties. The electronic band structure of these systems can be qualitatively modulated by interactions between the top and bottom layers, leading to the emergence of new quantum phenomena. However, the inhomogeneities present in atomically thin bilayer moiré superlattices created by artificial stacking have hindered a deeper understanding of strongly correlated electron properties. In this work, we report the fabrication of homogeneous moiré superlattices with controllable twist angles using a 2L-WSe2/2L-WSe2 homostructure. By adding extra layers, we provide additional degrees of freedom to tune the optical properties of the moiré superlattices while mitigating the nonuniformity problem. The presence of an additional bottom layer acts as a buffer, reducing the inhomogeneity of the moiré superlattice, while the encapsulation effect of the additional top and bottom WSe2 monolayers further enhances the localized moiré excitons. Our observations of alternating circularly polarized photoluminescence confirm the existence of moiré excitons, and their characteristics were further confirmed by theoretical calculations. These findings provide a fundamental basis for studying moiré potential correlated quantum phenomena and pave the way for their application in quantum optical devices.
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Affiliation(s)
- Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Sydney, NSW 2006 ,Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
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Yao YC, Wu BY, Chin HT, Yen ZL, Ting CC, Hofmann M, Hsieh YP. Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42746-42752. [PMID: 37646637 DOI: 10.1021/acsami.3c07793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (2D TMDCs) are considered promising materials for optoelectronics due to their unique optical and electric properties. However, their potential has been limited by the occurrence of atomic vacancies during synthesis. While post-treatment processes have demonstrated the passivation of such vacancies, they increase process complexity and affect the TMDC's quality. We here introduce the concept of pretreatment as a facile and powerful route to solve the problem of vacancies in MoS2. Low-temperature nitridation of the sapphire substrate prior to growth provides a nondestructive method to MoS2 modification without introducing new processing steps or increasing the thermal budget. Spectroscopic characterization and atomic-resolution microscopy reveal the incorporation of nitrogen from the sapphire surface layer into chalcogen vacancies. The resulting MoS2 with nitrogen-saturated defects shows a decrease in midgap states and more intrinsic doping as confirmed by ab initio calculations and optoelectronic measurements. The demonstrated pretreatment method opens up new routes toward future, high-performance 2D electronics, as evidenced by a 3-fold reduction in contact resistance and a 10-fold improved performance of 2D photodetectors.
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Affiliation(s)
- Yu-Chi Yao
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Bo-Yi Wu
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Hao-Ting Chin
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Chu-Chi Ting
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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5
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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6
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Zheng GS, Shen CL, Lou Q, Han JF, Ding ZZ, Deng Y, Wu MY, Liu KK, Zang JH, Dong L, Shan CX. Meter-scale chemiluminescent carbon nanodot films for temperature imaging. MATERIALS HORIZONS 2022; 9:2533-2541. [PMID: 35829660 DOI: 10.1039/d2mh00495j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Chemiluminescence (CL), as one class of luminescence driven by chemical reaction, exhibits obvious temperature-dependence in its light emission process. Herein, temperature-dependent CL emission of carbon nanodots (CDs) in the chemical reaction of peroxalate and hydrogen peroxide is demonstrated and temperature imaging based on the temperature-dependent CL has been established for the first time. In detail, the temperature-dependent CL emission of CDs in the chemical reaction of peroxalate and hydrogen peroxide is observed, and the linear relationship between the CL intensity and temperature is demonstrated in both the CL solution and film, enabling their applications in temperature sensing and imaging capabilities. The increase of the CL emission with temperature can be attributed to the accelerated electron exchange between the CDs and intermediate generated in the peroxalate system. Meter-scale chemiluminescent CD films have been constructed. The CL sensor based on the films presents a high spatial resolution of 0.4 mm and an outstanding sensitivity of 0.08 °C-1, which is amongst the best values for the thermographic luminophores. With the unique temperature response and flexible properties, non-planar, meter-scale and sensitive palm temperature imaging has been achieved. These findings present new opportunities for designing CL-based temperature probes and thermography.
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Affiliation(s)
- Guang-Song Zheng
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Cheng-Long Shen
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Qing Lou
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Jiang-Fan Han
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Zhong-Zheng Ding
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Yuan Deng
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Meng-Yuan Wu
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Kai-Kai Liu
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Jin-Hao Zang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
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7
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Lou Q, Ni Q, Niu C, Wei J, Zhang Z, Shen W, Shen C, Qin C, Zheng G, Liu K, Zang J, Dong L, Shan C. Carbon Nanodots with Nearly Unity Fluorescent Efficiency Realized via Localized Excitons. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203622. [PMID: 36002336 PMCID: PMC9596859 DOI: 10.1002/advs.202203622] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/03/2022] [Indexed: 05/19/2023]
Abstract
Carbon nanodots (CDs) have emerged as an alternative option for traditional nanocrystals due to their excellent optical properties and low toxicity. Nevertheless, high emission efficiency is a long-lasting pursuit for CDs. Herein, CDs with near-unity emission efficiency are prepared via atomic condensation of doped pyrrolic nitrogen, which can highly localize the excited states thus lead to the formation of bound excitons and the symmetry break of the π-electron conjugation. The short radiative lifetimes (<8 ns) and diffusion lengths (<50 nm) of the CDs imply that excitons can be efficiently localized by radiative recombination centers for a defect-insensitive emission of CDs. By incorporating the CDs into polystyrene, flexible light-converting films with a high solid-state quantum efficiency of 84% and good resistance to water, heating, and UV light are obtained. With the CD-polymer films as light conversion layers, CD-based white light-emitting diodes (WLEDs) with a luminous efficiency of 140 lm W-1 and a flat-panel illumination system with lighting sizes of more than 100 cm2 are achieved, matching state-of-the-art nanocrystal-based LEDs. These results pave the way toward carbon-based luminescent materials for solid-state lighting technology.
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Affiliation(s)
- Qing Lou
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Qingchao Ni
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Chunyao Niu
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Jianyong Wei
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
- State Key Laboratory of Advanced Optical Communication Systems and NetworksUniversity of Michigan–Shanghai Jiao Tong University Joint InstituteShanghai Jiao Tong UniversityShanghai200240China
| | - Zhuangfei Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Weixia Shen
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Chenglong Shen
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials and Spectrum Measures and ApplicationsCollege of Physics and Materials ScienceHenan Normal UniversityXinxiang453007China
| | - Guangsong Zheng
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Kaikai Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Jinhao Zang
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
| | - Chong‐Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Education, and School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou450052China
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Zhang Y, Kim H, Zhang W, Watanabe K, Taniguchi T, Gao Y, Maruyama M, Okada S, Shinokita K, Matsuda K. Magnon-Coupled Intralayer Moiré Trion in Monolayer Semiconductor-Antiferromagnet Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200301. [PMID: 35233833 DOI: 10.1002/adma.202200301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 02/18/2022] [Indexed: 06/14/2023]
Abstract
Moiré fringe patterns created by stacking different 2D layered materials as artificial van der Waals (vdW) heterostructures have become a novel platform to study and engineer optically generated excitonic properties. The moiré patterns contribute to the formation of spatially ordered excitonic states (excitons and trions), which can be used in the quantum simulation of many-body systems and ensembles of coherent quantum light emitters. The intriguing moiré excitonic properties are affected by and controlled via the interaction with magnetic elements. Here, a moiré excitonic system interacting with the magnetic elementary excitation of antiferromagnetic orders in MoSe2 /MnPS3 vdW heterostructures is reported. The low-temperature photoluminescence spectra with additional fine spectral structures on the low-energy side, which are coupled magnon-trion peaks below the Néel temperature of MnPS3 , are carefully investigated. The fine spectral structures with long lifetime and coherence time are assigned to intralayer trion-magnon complexes trapped in the moiré potentials (moiré trion-magnon complexes). These findings highlight the emergence of moiré trion-magnon complexes and provide a new way to explore novel quantum phenomena in moiré excitonic systems with magnetic functionalities.
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Affiliation(s)
- Yan Zhang
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Heejun Kim
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Wenjin Zhang
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Yanlin Gao
- Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1 Tennodai, Tsukuba, 305-8571, Japan
| | - Mina Maruyama
- Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1 Tennodai, Tsukuba, 305-8571, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1 Tennodai, Tsukuba, 305-8571, Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
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9
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Covre FS, Faria PE, Gordo VO, de Brito CS, Zhumagulov YV, Teodoro MD, Couto ODD, Misoguti L, Pratavieira S, Andrade MB, Christianen PCM, Fabian J, Withers F, Galvão Gobato Y. Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe 2. NANOSCALE 2022; 14:5758-5768. [PMID: 35348558 DOI: 10.1039/d2nr00315e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Strain plays an important role for the optical properties of monolayer transition metal dichalcogenides (TMDCs). Here, we investigate strain effects in a monolayer MoSe2 sample with a large bubble region using μ-Raman, second harmonic generation (SHG), μ-photoluminescence and magneto μ-photoluminescence at low temperature. Remarkably, our results reveal the presence of a non-uniform strain field and the observation of emission peaks at lower energies which are the signatures of exciton and trion quasiparticles red-shifted by strain effects in the bubble region, in agreement with our theoretical predictions. Furthermore, we have observed that the emission in the strained region decreases the trion binding energy and enhances the valley g-factors as compared to non-strained regions. Considering uniform biaxial strain effects within the unit cell of the TMDC monolayer (ML), our first principles calculations predict the observed enhancement of the exciton valley Zeeman effect. In addition, our results suggest that the exciton-trion fine structure plays an important role for the optical properties of strained TMDC ML. In summary, our study provides fundamental insights on the behaviour of excitons and trions in strained monolayer MoSe2 which are particularly relevant to properly characterize and understand the fine structure of excitonic complexes in strained TMDC systems/devices.
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Affiliation(s)
- F S Covre
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
| | - P E Faria
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - V O Gordo
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859, Campinas, São Paulo, Brazil
| | - C Serati de Brito
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
| | - Y V Zhumagulov
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - M D Teodoro
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
| | - O D D Couto
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859, Campinas, São Paulo, Brazil
| | - L Misoguti
- Instituto de Física de São Carlos - Universidade de São Paulo, CEP 13566-590, São Carlos, São Paulo, Brazil
| | - S Pratavieira
- Instituto de Física de São Carlos - Universidade de São Paulo, CEP 13566-590, São Carlos, São Paulo, Brazil
| | - M B Andrade
- Instituto de Física de São Carlos - Universidade de São Paulo, CEP 13566-590, São Carlos, São Paulo, Brazil
| | - P C M Christianen
- High Field Magnet Laboratory (HFML - EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - J Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - F Withers
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, UK
| | - Y Galvão Gobato
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil.
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10
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Pang R, Wang S. Dipole moment and pressure dependent interlayer excitons in MoSSe/WSSe heterostructures. NANOSCALE 2022; 14:3416-3424. [PMID: 35113117 DOI: 10.1039/d1nr06204b] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The broken mirror symmetry of two-dimensional (2D) Janus materials brings novel quantum properties and various application prospects. Particularly, when stacking into heterostructures, their intrinsic dipole moments and large band offsets are very favorable to the photoexcited properties concerning electron-hole pairs, i.e., excitons. However, the effect of the intrinsic dipole moments on the interlayer excitons in the heterostructures composed of 2D Janus materials is still unclear. Here we use the GW/BSE methods to explore the effect of the intrinsic dipole moments on the interlayer excitons via varying the stacking configuration of MoSSe/WSSe heterostructures. Surprisingly, our results reveal that the parallel-arranged intrinsic dipole moments enhance the interlayer coupling in the heterostructures, and hence make the lowest interlayer exciton have an intensity comparable to the bright excitons while accompanied by a large binding energy and a radiative lifetime as long as 10-7 s at 300 K, though it is almost a spin-forbidden process, and with the out-of-plane light polarization, long lifetime interlayer excitons are observed under the effect of selection rules. More intriguingly, we found that the photoexcited properties of the interlayer excitons considering the momentum in the stacking configuration with parallel-arranged intrinsic dipole moments are greatly tunable through hydrostatic pressure. These explorations provide a basic perspective for optoelectronic applications by means of engineering the intrinsic dipole moments in Janus heterostructures.
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Affiliation(s)
- Rongtian Pang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
| | - Shudong Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
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11
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Zheng G, Wang T, Lou Q, Shen C, Wu M, Sun J, Ji W, Zang J, Liu K, Dong L, Shan C. Localized Excitonic Electroluminescence from Carbon Nanodots. J Phys Chem Lett 2022; 13:1587-1595. [PMID: 35139310 DOI: 10.1021/acs.jpclett.1c04028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Localized excitons are expected to achieve high-performance electroluminescence and have been widely investigated in GaN-based light-emitting diodes (LEDs). Although carbon nanodot (CD) based LEDs have been achieved with the radiative recombination of electrons and holes, localized excitonic electroluminescence has been not reported before. In this Letter, localized excitonic electroluminescent devices have been fabricated using fluorescent CDs as an active layer. The CDs show strong localized excitonic yellow emission with a fluorescence quantum yield of 76% and Stokes shift of 2.1 eV. The CD-based LEDs present a sub-bandgap turn-on voltage of 2.4 V and a maximum luminance of 60.2 cd m-2, which is the lowest driving voltage among the CD-based electroluminescent devices. Localized centers trap carriers effectively, resulting in sub-bandgap light emission. The current results manifest that localized excitons may furnish a promising approach to boost the development of CD-based LEDs.
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Affiliation(s)
- Guangsong Zheng
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Ting Wang
- Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130023, China
| | - Qing Lou
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chenglong Shen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Mengyuan Wu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Junlu Sun
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Wenyu Ji
- Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130023, China
| | - Jinhao Zang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Kaikai Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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12
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Hlova IZ, Singh P, Malynych SZ, Gamernyk RV, Dolotko O, Pecharsky VK, Johnson DD, Arroyave R, Pathak AK, Balema VP. Incommensurate transition-metal dichalcogenides via mechanochemical reshuffling of binary precursors. NANOSCALE ADVANCES 2021; 3:4065-4071. [PMID: 36132842 PMCID: PMC9417183 DOI: 10.1039/d1na00064k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2021] [Accepted: 06/06/2021] [Indexed: 06/16/2023]
Abstract
A new family of heterostructured transition-metal dichalcogenides (TMDCs) with incommensurate ("misfit") spatial arrangements of well-defined layers was prepared from structurally dissimilar single-phase 2H-MoS2 and 1T-HfS2 materials. The experimentally observed heterostructuring is energetically favorable over the formation of homogeneous multi-principle element dichalcogenides observed in related dichalcogenide systems of Mo, W, and Ta. The resulting three-dimensional (3D) heterostructures show semiconducting behavior with an indirect band gap around 1 eV, agreeing with values predicted from density functional theory. Results of this joint experimental and theoretical study open new avenues for generating unexplored metal-dichalcogenide heteroassemblies with incommensurate structures and tunable physical properties.
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Affiliation(s)
- Ihor Z Hlova
- Ames Laboratory, U.S. Department of Energy, Iowa State University Ames IA 50011-2416 USA
| | - Prashant Singh
- Ames Laboratory, U.S. Department of Energy, Iowa State University Ames IA 50011-2416 USA
| | | | | | - Oleksandr Dolotko
- Ames Laboratory, U.S. Department of Energy, Iowa State University Ames IA 50011-2416 USA
| | - Vitalij K Pecharsky
- Ames Laboratory, U.S. Department of Energy, Iowa State University Ames IA 50011-2416 USA
- Department of Materials Science and Engineering, Iowa State University Ames IA 50011-1096 USA
| | - Duane D Johnson
- Ames Laboratory, U.S. Department of Energy, Iowa State University Ames IA 50011-2416 USA
- Department of Materials Science and Engineering, Iowa State University Ames IA 50011-1096 USA
| | - Raymundo Arroyave
- Department of Materials Science & Engineering, Texas A&M University College Station TX 77843 USA
| | - Arjun K Pathak
- Department of Physics SUNY Buffalo State Buffalo NY 14222 USA
| | - Viktor P Balema
- Ames Laboratory, U.S. Department of Energy, Iowa State University Ames IA 50011-2416 USA
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13
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Wang J, Wei X, Wang X, Song W, Zhong W, Wang M, Ju J, Tang Y. Plasmonic Au Nanoparticle@Ti 3C 2T x Heterostructures for Improved Oxygen Evolution Performance. Inorg Chem 2021; 60:5890-5897. [PMID: 33787232 DOI: 10.1021/acs.inorgchem.1c00302] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
As we know, in plasmonic-enhanced heterogeneous catalysis, the reaction rates could be remarkably accelerated by generating hot carriers in the constituent nanostructured metals. To further improve the reaction rate, well-defined heterostructures based on plasmonic gold nanoparticles on MXene Ti3C2Tx nanosheets (Au NPs@Ti3C2Tx) were rationally designed and systematically investigated to improve the performance of the oxygen evolution reaction (OER). The results demonstrated that the catalysis performance of the Au NPs@Ti3C2Tx system could be easily tuned by simply varying the concentration and size of Au NPs, and Au NPs@Ti3C2Tx with an average Au NP diameter (∼10 nm) exhibited a 2.5-fold increase in the oxidation or reduction current compared with pure Ti3C2Tx. The enhanced OER performance can be attributed to the synergistic effect of the plasmonic hot hole injection and Schottky junction carrier trapping. Owing to easy fabrication of Au NPs@Ti3C2Tx, the tunable size and concentration of Au NPs loaded on MXene nanosheets, and the significantly enhanced OER, it is expected that this work can lay the foundation to the design of multidimensional MXene-based heterostructures for highly efficient OER performance.
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Affiliation(s)
- Jin Wang
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Xiaoqing Wei
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Xunyue Wang
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Wenwu Song
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Weiting Zhong
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Minmin Wang
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Jianfeng Ju
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
| | - Yanfeng Tang
- Nantong Key Laboratory of Intelligent and New Energy Materials, School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, P. R. China
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