Growth and Grain Boundaries in 2D Materials

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.

Kinkless Electronic Junction along 1D Electronic Channel Embedded in a Van Der Waals Layer

Here, the formation of type-I and type-II electronic junctions with or without any structural discontinuity along a well-defined 1 nm-wide 1D electronic channel within a van der Waals layer is reported. Scanning tunneling microscopy and spectroscopy techniques are employed to investigate the atomic and electronic structure along peculiar domain walls formed on the charge-density-wave phase of 1T-TaS2 . Distinct kinds of abrupt electronic junctions with discontinuities of the band gap along the domain walls are found, some of which even do not have any structural kinks and defects. Density-functional calculations reveal a novel mechanism of the electronic junction formation; they are formed by a kinked domain wall in the layer underneath through substantial electronic interlayer coupling. This work demonstrates that the interlayer electronic coupling can be an effective control knob over nanometer-scale electronic property of 2D atomic monolayers.

Inorganic Nanoparticles as Radiosensitizers for Cancer Treatment

Nanotechnology has expanded what can be achieved in our approach to cancer treatment. The ability to produce and engineer functional nanoparticle formulations to elicit higher incidences of tumor cell radiolysis has resulted in substantial improvements in cancer cell eradication while also permitting multi-modal biomedical functionalities. These radiosensitive nanomaterials utilize material characteristics, such as radio-blocking/absorbing high-Z atomic number elements, to mediate localized effects from therapeutic irradiation. These materials thereby allow subsequent scattered or emitted radiation to produce direct (e.g., damage to genetic materials) or indirect (e.g., protein oxidation, reactive oxygen species formation) damage to tumor cells. Using nanomaterials that activate under certain physiologic conditions, such as the tumor microenvironment, can selectively target tumor cells. These characteristics, combined with biological interactions that can target the tumor environment, allow for localized radio-sensitization while mitigating damage to healthy cells. This review explores the various nanomaterial formulations utilized in cancer radiosensitivity research. Emphasis on inorganic nanomaterials showcases the specific material characteristics that enable higher incidences of radiation while ensuring localized cancer targeting based on tumor microenvironment activation. The aim of this review is to guide future research in cancer radiosensitization using nanomaterial formulations and to detail common approaches to its treatment, as well as their relations to commonly implemented radiotherapy techniques.

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films

Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.

Progress on the in situ imaging of growth dynamics of two-dimensional materials

One key issue to promote the industrialization of two-dimensional (2D) materials is to grow high-quality and large-scale 2D materials. Investigations of the growth mechanism and growth dynamics are of fundamental importance for the growth of 2D material, in which in situ imaging is highly needed. By applying different in situ imaging techniques, details for growth process, including nucleation and morphology evolution, can be obtained. This review summarizes the recent progress on the in situ imaging of 2D material growth, in which the growth rate, kink dynamics, domain coalescence, growth across the substrate steps, single-atom catalysis, and intermediates have been revealed.

Electrical Contacts With 2D Materials: Current Developments and Future Prospects

Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.

A theoretical study on the line defects in β12-borophene: enhanced direct-current and alternating-current conductances

Using density functional theory and the non-equilibrium Green's function method, we theoretically investigated the structures, stabilities, electronic properties, and the direct-current (DC) and alternating-current (AC) transport properties of the line defects in two-dimensional material β₁₂-borophene. Our results suggest that there exist six line defects that can enhance the stability of β₁₂-borophene and the line defects have profound influences on the electronic structure of β₁₂-borophene. Along the zigzag direction, the line defects can change the atomic orbital components of the Dirac cones in perfect β₁₂-borophene, but the line defects along the armchair direction have complicated influences on the Dirac cones. In the case of DC transport, some of the line defects lead to the constant DC phenomenon and the negative differential resistance effect, and enhance the DC conductances since the line defects exhibit typical one-dimensional characteristics. In the case of AC transport, some of the line defects enhance the AC conductances in the medium-frequency and high-frequency ranges through the photon-assisted tunneling effect. The microscopic mechanisms of the enhanced DC and AC conductances are different. In addition, for a low-frequency range, the equivalent circuits of β₁₂-borophene and the line defects were also suggested, which will be beneficial for designing borophene-based functional nanodevices.

Porous Carbon Nanofiber Flexible Membranes via a Bottlebrush Copolymer Template for Enhanced High-Performance Supercapacitors

We report a method to construct ordered hierarchical porous structures in carbon nanofiber membranes using poly(ethylene oxide)-block-polydimethylsiloxane bottlebrush block copolymers (BBCPs) as templates. The BBCPs self-assemble into a spherical morphology driven by small-molecule hydrogen bond donors which act as bridges between carbon precursors and templates to promote uniform dispersion of the templates. We successfully obtained flexible, self-supporting, and porous carbon nanofiber membranes (PCNFs) with high porosity. Then, a supercapacitor electrode was independently prepared using PCNFs as an active substance without infiltrating any conductive agents or binders. The PCNFs exhibit excellent performance with a capacitance of 234.1 F g^-1 at a current density of 1 A g^-1 owing to the abundant hierarchical porous structures and high content of nitrogen and oxygen elements internally. The aqueous symmetric supercapacitor prepared using PCNFs electrodes maintains more than 95% capacitance retention after 55,000 charge-discharge cycles. Furthermore, the capacitance retention reaches up to 67.72% at a current density of 50 A g^-1 (compared to 1 A g^-1), exhibiting excellent cycling stability and rate capability. Based on the excellent electrochemical performance and flexible self-supporting ability of PCNFs, this work is expected to facilitate the development of flexible displays, flexible sensors, wearable devices, and electrocatalysis.

Retrieving Grain Boundaries in 2D Materials

The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

2D transition metal chalcogenide (TMDC) materials, such as MoS₂ , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS₂ have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS₂ beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS₂ in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

Breaking through the Mermin-Wagner limit in 2D van der Waals magnets

The Mermin-Wagner theorem states that long-range magnetic order does not exist in one- (1D) or two-dimensional (2D) isotropic magnets with short-ranged interactions. Here we show that in finite-size 2D van der Waals magnets typically found in lab setups (within millimetres), short-range interactions can be large enough to allow the stabilisation of magnetic order at finite temperatures without any magnetic anisotropy. We demonstrate that magnetic ordering can be created in 2D flakes independent of the lattice symmetry due to the intrinsic nature of the spin exchange interactions and finite-size effects. Surprisingly we find that the crossover temperature, where the intrinsic magnetisation changes from superparamagnetic to a completely disordered paramagnetic regime, is weakly dependent on the system length, requiring giant sizes (e.g., of the order of the observable universe ~ 1026 m) to observe the vanishing of the magnetic order as expected from the Mermin-Wagner theorem. Our findings indicate exchange interactions as the main ingredient for 2D magnetism.

Synthesis of graphene nanomesh with symmetrical fractal patterns via hydrogen-free chemical vapor deposition

Graphene nanomesh (GNM), an emerging graphene nanostructure with a tunable bandgap, has gained tremendous interests owing to its great potentials in the fields of high-performance field-effect transistors, electrochemical sensors, new generation of spintronics and energy converters. In previous works, GNM has been successfully obtained on copper foil surface by employing hydrogen as an etching agent. A more facile, and low-cost strategy for the preparation of GNM is required. Here, we demonstrated a direct and feasible means for synthesizing large-area GNM with symmetrical fractal patterns via a hydrogen-free chemical vapor deposition method. The influences of the growth time and the gas source flow on the morphology of GNM patterns were systematically investigated. Then, we exhibited the key reaction details and proposed a growth mechanism of the GNM synthesis during the hydrogen-free chemical vapor deposition process. This work provides a valuable guidance for quality control in GNM mass production.

Domain walls in fractional media

Currently, much interest is drawn to the analysis of optical and matter-wave modes supported by the fractional diffraction in nonlinear media. We predict a new type of such states in the form of domain walls (DWs) in the two-component system of immiscible fields. Numerical study of the underlying system of fractional nonlinear Schrödinger equations demonstrates the existence and stability of DWs at all values of the respective Lévy index (α<2), which determines the fractional diffraction, and at all values of the XPM/SPM ratio β in the two-component system above the immiscibility threshold. The same conclusion is obtained for DWs in the system which includes the linear coupling, alongside the XPM interaction between the immiscible components. Analytical results are produced for the scaling of the DW's width. The DW solutions are essentially simplified in the special case of β=3, as well as close to the immiscibility threshold. In addition to symmetric DWs, asymmetric ones are constructed too, in the system with unequal diffraction coefficients and/or different Lévy indices of the two components.

Defect-suppressed submillimeter-scale WS2 single crystals with high photoluminescence quantum yields by alternate-growth-etching CVD

Defects, such as uncontrollable vacancies, will intensively degrade the material properties and device performance of CVD-grown transition metal dichalcogenides (TMDs). Although vacancies can be repaired by some post-processing measures, these treatments are usually time-consuming, complicated and may introduce uncontrollable chemical contaminants into TMDs. How to efficiently suppress the uncontrollable defects during CVD growth and acquire intrinsic high-quality CVD-grown TMDs without any after-treatment remains a critical challenge, and has not yet been well resolved. Here, an alternate-growth-etching (AGE) CVD method was demonstrated to fabricate defect-suppressed submillimeter-scale monolayer WS₂ single crystals. Compared with normal CVD, the grain size of the as-grown WS₂ can be enlarged by 4-5 times (∼520 μm) and the growth rate of ∼14.4 μm min^-1 is also at a high level compared to reported results. Moreover, AGE-CVD can efficiently suppress atomic vacancies in WS₂. In every growth-etching cycle, the etching of WS₂ occurs preferentially at the defective sites, which will be healed at the following growth stage. As a result, WS₂ monolayers obtained by AGE-CVD possess higher crystal quality, carrier mobility (8.3 cm² V^-1 s^-1) and PL quantum yield (QY, 52.6%) than those by normal CVD. In particular, such a PL QY is the highest value ever reported for in situ CVD-grown TMDs without any after-treatment, and is even comparable to the values of mechanically exfoliated samples. This AGE-CVD method is also appropriate for the synthesis of other high-quality TMD single crystals on a large-scale.

Atomically Sharp, Closed Bilayer Phosphorene Edges by Self-Passivation

Two-dimensional crystals' edge structures not only influence their overall properties but also dictate their formation due to edge-mediated synthesis and etching processes. Edges must be carefully examined because they often display complex, unexpected features at the atomic scale, such as reconstruction, functionalization, and uncontrolled contamination. Here, we examine atomic-scale edge structures and uncover reconstruction behavior in bilayer phosphorene. We use in situ transmission electron microscopy (TEM) of phosphorene/graphene specimens at elevated temperatures to minimize surface contamination and reduce e-beam damage, allowing us to observe intrinsic edge configurations. The bilayer zigzag (ZZ) edge was found to be the most stable edge configuration under e-beam irradiation. Through first-principles calculations and TEM image analysis under various tilting and defocus conditions, we find that bilayer ZZ edges undergo edge reconstruction and so acquire closed, self-passivated edge configurations. The extremely low formation energy of the closed bilayer ZZ edge and its high stability against e-beam irradiation are confirmed by first-principles calculations. Moreover, we fabricate bilayer phosphorene nanoribbons with atomically sharp closed ZZ edges. The identified bilayer ZZ edges will aid in the fundamental understanding of the synthesis, degradation, reconstruction, and applications of phosphorene and related structures.

Exploring the Role of 2D-Graphdiyne as a Charge Carrier Layer in Field-Effect Transistors for Non-Covalent Biological Immobilization against Human Diseases

Graphdiyne's (GDY's) outstanding features have made it a novel 2D nanomaterial and a great candidate for electronic gadgets and optoelectronic devices, and it has opened new opportunities for the development of highly sensitive electronic and optical detection methods as well. Here, we testified a non-covalent grafting strategy in which GDY serves as a charge carrier layer and a bioaffinity substrate to immobilize biological receptors on GDY-based field-effect transistor (FET) devices. Firm non-covalent anchoring of biological molecules via pyrene groups and electrostatic interactions in addition to preserved electrical properties of GDY endows it with features of an ultrasensitive and stable detection mechanism. With emerging new forms and extending the subtypes of the already existing fatal diseases, genetic and biological knowledge demands more details. In this regard, we constructed simple yet efficient platforms using GDY-based FET devices in order to detect different kinds of biological molecules that threaten human health. The resulted data showed that the proposed non-covalent bioaffinity assays in GDY-based FET devices could be considered reliable strategies for novel label-free biosensing platforms, which still reach a high on/off ratio of over 10⁴. The limits of detection of the FET devices to detect DNA strands, the CA19-9 antigen, microRNA-155, the CA15-3 antigen, and the COVID-19 antigen were 0.2 aM, 0.04 pU mL^-1, 0.11 aM, 0.043 pU mL^-1, and 0.003 fg mL^-1, respectively, in the linear ranges of 1 aM to 1 pM, 1 pU mL^-1 to 0.1 μU mL^-1, 1 aM to 1 pM, 1 pU mL^-1 to 10 μU mL^-1, and 1 fg mL^-1 to 10 ng mL^-1, respectively. Finally, the extraordinary performance of these label-free FET biosensors with low detection limits, high sensitivity and selectivity, capable of being miniaturized, and implantability for in vivo analysis makes them a great candidate in disease diagnostics and point-of-care testing.

Slip-Line-Guided Growth of Graphene

Manipulating the crystal orientation of emerging 2D materials via chemical vapor deposition (CVD) is a key premise for obtaining single-crystalline films and designing specific grain-boundary (GB) structures. Herein, the controllable crystal orientation of graphene during the CVD process is demonstrated on a single-crystal metal surface with preexisting atomic-scale stair steps resulting from dislocation slip lines. The slip-line-guided growth principle is established to explain and predict the crystal orientation distribution of graphene on a variety of metal facets, especially for the multidirectional growth cases on Cu(hk0) and Cu(hkl) substrates. Not only large-area single-crystal graphene, but also bicrystal graphene with controllable GB misorientations, are successfully synthesized by rationally employing tailored metal substrate facets. As a demonstration, bicrystal graphenes with misorientations of ≈21° and ≈11° are constructed on Cu(410) and Cu(430) foils, respectively. This guideline builds a bridge linking the crystal orientation of graphene and the substrate facet, thereby opening a new avenue for constructing bicrystals with the desired GB structures or manipulating 2D superlattice twist angles in a bottom-up manner.

Hexamethylenetetramine induced multidimensional defects in Co2P nanosheets for efficient alkaline hydrogen evolution

Crystal engineering is an important way to improve the catalytic performance of transition-metal phosphides. In this work, we propose a strategy for constructing multi-dimensional defects induced by hexamethylenetetramine, which effectively introduces grain boundaries, N doping and P vacancies into Co₂P nanosheets, and improves the activity and stability of the catalyst. Due to the synergistic effect of the multi-dimensional defects, the Co₂P nanosheets exhibit excellent HER catalytic performance, especially at a large current density of 100 mA cm^-2 with an overpotential of only 159 mV. Under 1 M KOH electrolyte and current density of 10 mA cm^-2, the long-term test for 36 h shows that the catalyst maintains a very high stability.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Ultrafast Generation of Coherent Phonons in Two-Dimensional Bismuthene

Coherent phonons generated through regulation of lattice oscillation via ultrafast laser pulses or X-rays have been desired in various fields, including optoelectronics, thermal and quantum information, and communications. Phonon coherence of two-dimensional (2D) materials is particularly attractive as it enables controllable information transmission but is challenging as the weak interplanar coupling makes phonon excitation extremely difficult. Herein we managed to generate size-dependent phonon coherence from bulk Bi to few-layer bismuthene by an ultrafast femtosecond laser pulse and made a systematic comparison thorough a combination of computation, transient absorption, and reflectance spectroscopic methods. The results witnessed the A_1g phonon excitation in all of the three Bi materials with distinct thicknesses, and the quantum size effect of 2D materials caused phonon confinement and eventual bond softening manifested as a red-shifted vibration frequency and shortened decoherence time compared with those of their bulk counterpart. This study offers new perspectives for tailoring coherent phonons in 2D materials for quantum science and technology including quantum communication, computing, and design of novel quantum devices, etc.

Chemical vapor deposition of 2D materials: A review of modeling, simulation, and machine learning studies

Chemical vapor deposition (CVD) is extensively used to produce large-area two-dimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (e.g., MoS₂/WSe₂). Herein, we survey the vast literature regarding modeling and simulation of the CVD growth of 2D materials and their heterostructures. We also focus on newer materials, such as silicene, phosphorene, and borophene. We discuss how density functional theory, kinetic Monte Carlo, and reactive molecular dynamics simulations can shed light on the thermodynamics and kinetics of vapor-phase synthesis. We explain how machine learning can be used to develop insights into growth mechanisms and outcomes, as well as outline the open knowledge gaps in the literature. Our work provides consolidated theoretical insights into the CVD growth of 2D materials and presents opportunities for further understanding and improving such processes

Bottom-Up-Etching-Mediated Synthesis of Large-Scale Pure Monolayer Graphene on Cyclic-Polishing-Annealed Cu(111)

Synthesis of large-scale single-crystalline graphene monolayers without multilayers involves the fabrication of proper single-crystalline substrates and the ubiquitous formation of multilayered graphene islands during chemical vapor deposition. Here, a method of cyclic electrochemical polishing combined with thermal annealing, which allows the conversion of commercial polycrystalline Cu foils to single-crystal Cu(111) with an almost 100% yield, is presented. A global "bottom-up-etching" method that is capable of fabricating large-area pure single-crystalline graphene monolayers without multilayers through selectively etching bottom multilayered graphene underneath large area as-grown graphene monolayer on Cu(111) surface is demonstrated. Terahertz time-domain spectroscopy (THz-TDS) measurement of the pure monolayer graphene film shows a high average sheet conductivity of 2.8 mS and mean carrier mobility of 6903 cm² V^-1 s^-1 over a large area. Density functional theory (DFT) calculations show that the selective etching is induced by the much easier diffusion of hydrogen atoms than hydrocarbon radicals across the edges of the top graphene layer, and the simulated selective etching processes based on phase field modeling are well consistent with experimental observations. This work provides new ways toward the production of single-crystal Cu(111) and the synthesis of pure monolayer graphene with high electronic quality.

Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene

The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters-average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.

Recent trends in covalent functionalization of 2D materials

Covalent functionalization of the surface is more crucial in 2D materials than in conventional bulk materials because of their atomic thinness, large surface-to-volume ratio, and uniform surface chemical potential. Because...

Continuous orientated growth of scaled single-crystal 2D monolayer films

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

Past and Present Trends in the Development of the Pattern-Formation Theory: Domain Walls and Quasicrystals

A condensed review is presented for two basic topics in the theory of pattern formation in nonlinear dissipative media: (i) domain walls (DWs, alias grain boundaries), which appear as transient layers between different states occupying semi-infinite regions, and (ii) two- and three-dimensional (2D and 3D) quasiperiodic (QP) patterns, which are built as a superposition of plane–wave modes with incommensurate spatial periodicities. These topics are selected for the present review, dedicated to the 70th birthday of Professor Michael I. Tribelsky, due to the impact made on them by papers of Prof. Tribelsky and his coauthors. Although some findings revealed in those works may now seem “old”, they keep their significance as fundamentally important results in the theory of nonlinear DW and QP patterns. Adding to the findings revealed in the original papers by M.I. Tribelsky et al., the present review also reports several new analytical results, obtained as exact solutions to systems of coupled real Ginzburg–Landau (GL) equations. These are a new solution for symmetric DWs in the bimodal system including linear mixing between its components; a solution for a strongly asymmetric DWs in the case when the diffusion (second-derivative) term is present only in one GL equation; a solution for a system of three real GL equations, for the symmetric DW with a trapped bright soliton in the third component; and an exact solution for DWs between counter-propagating waves governed by the GL equations with group-velocity terms. The significance of the “old” and new results, collected in this review, is enhanced by the fact that the systems of coupled equations for two- and multicomponent order parameters, addressed in this review, apply equally well to modeling thermal convection, multimode light propagation in nonlinear optics, and binary Bose–Einstein condensates.

Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives

Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.

Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe2

2D molybdenum ditelluride (MoTe₂ ) with polymorphism is a promising candidate to developing phase-change memory, high-performance transistors and spintronic devices. The phase-transition-assisted chemical vapor deposition (CVD) process has been used to prepare large-scale 2H-MoTe₂ with large grain size and low density of grain boundary. However, because of the lack of precise control of the growth condition, some defects including the amorphous regions and grain boundaries in 2H-MoTe₂ are hardly avoidable. Here, a facile method of selectively etching defects in large-scale CVD-grown 2H-MoTe₂ by triiodide ion (I₃ ^- ) solution is reported. The defect etching is attributed to the reduced lattice symmetry, high chemisorption activity and high conductivity of the defects due to the high density of Te vacancies. The treated 2H-MoTe₂ shows the suppressed hysteresis in the electrical transfer curve, enhances hole mobility and the higher effective barrier height on the metal contact, suggesting the decreased density of defects. Further chemical analysis indicates that the 2H-MoTe₂ is not damaged or doped by I₃ ^- solution during the etching process. This simple and low-cost post-processing method is effective for etching the defects in large-area 2H-MoTe₂ for high-performance device applications.

Single-Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates

Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS₂ (SC-MoS₂ ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS₂ domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS₂ domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS₂ seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS₂ domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

ConspectusSince the rise of two-dimensional (2D) materials, synthetic methods including mechanical exfoliation, solution synthesis, and chemical vapor deposition (CVD) have been developed. Mechanical exfoliation prepares randomly shaped materials with small size. Solution synthesis introduces impurities that degrade the performances. CVD is the most successful one for low-cost scalable preparation. However, when it comes to practical applications, disadvantages such as high operating temperature (∼1000 °C), probable usage of metal catalysts, contamination, defects, and interstices introduced by postgrowth transfer are not negligible. These are the reasons why plasma-enhanced CVD (PECVD), a method that enables catalyst-free in situ preparation at low temperature, is imperatively desirable.In this Account, we summarize our recent progress on controllable preparation of 2D materials by PECVD and their applications. We found that there was a competition between etching and nucleation and deposition in PECVD, making it highly controllable to obtain desired materials. Under different equilibrium states of the competition, various 2D materials with diverse morphologies and properties were prepared including pristine or nitrogen-doped graphene crystals, graphene quantum dots, graphene nanowalls, hexagonal boron nitride (h-BN), B-C-N ternary materials (BC_xN), etc. We also used mild plasma to modify or treat 2D materials (e.g., WSe₂) for desired properties.PECVD has advantages such as low temperature, transfer-free process, and industrial compatibility, which enable facile, scalable, and low-cost preparation of 2D materials with clean surfaces and interfaces directly on noncatalytic substrates. These merits significantly benefit the as-prepared materials in the applications. Field-effect transistors with high motilities were directly fabricated on graphene and nitrogen-doped graphene. By use of h-BN as the dielectric interfacial layer, both mobilities and saturated power densities of the devices were improved owing to the clean, closely contacted interface and enhanced interfacial thermal dissipation. High-quality materials and interfaces also enabled promising applications of these materials in photodetectors, pressure sensors, biochemical sensors, electronic skins, Raman enhancement, etc. To demonstrate the commercial applications, several prototypical devices were studied such as distributed pressure sensor arrays, touching module on a robot hand for braille recognition, and smart gloves for recording sign language. Finally, we discuss opportunities and challenges of PECVD as a comprehensive preparation methodology of 2D materials for future applications beyond traditional CVD.

Tunable electronic properties of BSe-MoS2/WS2 heterostructures for promoted light utilization

With applications in high performance electronics, photovoltaics, and catalysis, two-dimensional (2D) transition metal dichalcogenides (TMDCs) attract extensive attention due to their extraordinary physical properties. People have focused on TMDC-based materials for years, while the low mobility greatly hinders their further application. TMDC-based heterostructures with tunable band alignment have been experimentally confirmed to be feasible for photoelectronic devices or photocatalysts. Based on the density functional theory (DFT), there are four discoveries in this work: (1) we propose two new heterostructures based on BSe and MoS2/WS2 that have quite low mismatches and intrinsic type-II alignments. (2) Even though the VBM of BSe-MoS2 are completely contributed by BSe, the heterostructure is still endowed with a lower effective mass and a better transport characteristic in comparison with pristine structures. (3) A promoted absorption ability and a better transport characteristic oppose each other and the two characteristics cannot be obtained at the same time. (4) Tension strained structures can induce promoted light absorption in the solar spectrum and the predicted efficiency of the BSe-MoS2 bilayer can be as high as ∼19.3%, when the external electric field is applied. This theoretical survey proves that BSe-MoS2/WS2 with high flexibility and tunability are potential candidates for novel electronic devices and photocatalysts.