Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe2 Nanodrums

Two-dimensional (2D) material resonators have emerged as promising platforms for advanced nanomechanical applications due to their exceptional mechanical properties, tunability, and nonlinearities. We explored the strong mechanical mode coupling between two adjacent 3R-WSe2 nanodrums at room temperature. Combining a piezoelectric material, as noncentrosymmetric 3R-WSe2, and vibration manipulation is the building block for phononic experiments with 2D materials. By strategically placing gate grids beneath each resonator and mapping the spatial distribution of these modes, we demonstrate the ability to transit between localized modes in individual membranes to delocalized, strongly coupled modes that span the entire suspended region. The coherent coupling is strongly tunable with simple gate voltage, and remarkable resonance splitting was achieved, corresponding to up to 5% of the vibration frequency. These results showcase the potential of 2D material resonators for efficient information exchange, paving the way for novel applications in quantum technologies and nanoscale sensing.

Ultrahigh Photosensitivity Based on Single-Step Lay-on Integration of Freestanding Two-Dimensional Transition-Metal Dichalcogenide

Two-dimensional transition-metal dichalcogenides have attracted significant attention because of their unique intrinsic properties, such as high transparency, good flexibility, atomically thin structure, and predictable electron transport. However, the current state of device performance in monolayer transition-metal dichalcogenide-based optoelectronics is far from commercialization, because of its substantial strain on the heterogeneous planar substrate and its robust metal deposition, which causes crystalline damage. In this study, we show that strain-relaxed and undamaged monolayer WSe2 can improve a device performance significantly. We propose here an original point-cell-type photodetector. The device consists in a monolayer of an absorbing TMD (i.e., WSe2) simply deposited on a structured electrode, i.e., core-shell silicon-gold nanopillars. The maximum photoresponsivity of the device is found to be 23.16 A/W, which is a significantly high value for monolayer WSe2-based photodetectors. Such point-cell photodetectors can resolve the critical issues of 2D materials, leading to tremendous improvements in device performance.

Sliding nanomechanical resonators

The motion of a vibrating object is determined by the way it is held. This simple observation has long inspired string instrument makers to create new sounds by devising elegant string clamping mechanisms, whereby the distance between the clamping points is modulated as the string vibrates. At the nanoscale, the simplest way to emulate this principle would be to controllably make nanoresonators slide across their clamping points, which would effectively modulate their vibrating length. Here, we report measurements of flexural vibrations in nanomechanical resonators that reveal such a sliding motion. Surprisingly, the resonant frequency of vibrations draws a loop as a tuning gate voltage is cycled. This behavior indicates that sliding is accompanied by a delayed frequency response of the resonators, making their dynamics richer than that of resonators with fixed clamping points. Our work elucidates the dynamics of nanomechanical resonators with unconventional boundary conditions, and offers opportunities for studying friction at the nanoscale from resonant frequency measurements.

The motion of a vibrating object is set by the way it is held. Here, the authors show a nanomechanical resonator reversibly slides on its supporting substrate as it vibrates and exploit this unconventional dynamics to quantify friction at the nanoscale.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for high-integration-density applications such as data storage due to their small vertical dimension and high data storage capability. Here, we report a memristor based on free-standing multilayer molybdenum disulfide (MoS₂) with a high current on/off ratio of ∼10³ and a stable retention for at least 3000 s. Through light modulation of the carrier density in the suspended MoS₂ channel, the on/off ratio can be further increased to ∼10⁵. Moreover, the essential photosynaptic functions with short- and long-term memory (STM and LTM) behaviors are successfully mimicked by such devices. These results also indicate that STM can be transferred to LTM by increasing the light stimuli power, pulse duration, and number of pulses. The electrical measurements performed under vacuum and ambient air conditions propose that the observed resistive switching is due to adsorbed oxygen and water molecules on both sides of the MoS₂ channel. Thus, our free-standing 2D multilayer MoS₂-based memristors propose a simple approach for fabrication of a low-power-consumption and reliable resistive switching device for neuromorphic applications.

Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study

The fluorescence-based optical imaging in the second near-infrared region (NIR-II, 1,000-1,700 nm) has broad applications in the biomedical field, but it is still difficult to find new NIR-II fluorescence materials in the two dimension. As a crucial characteristic of the electronic structure, the band structure determines the fundamental properties of two-dimensional materials, such as their optical excitations and electronic transportation. Therefore, we calculated the electronic structures and optical properties of different crystalline phases (1T phase and 2H phase) of pure monolayer MoS2 films and found that the 1T phase has better absorption and thus better fluorescence in the NIR-II window. However, its poor stability makes the 1T-phase MoS2 less useful in vivo bioimaging. By introducing vacancy defects and doping with foreign atoms, we successfully tuned the bandgap of the monolayer 2H-MoS2 and activated it in the NIR-II. Our results show that by engineering the vacancy defects, the bandgap of the 2H phase can be tailored to around 1 eV, and there are three candidates of vacancy structures that exhibit strong absorption in the NIR-II.

Directional charge delocalization dynamics in semiconducting 2H-MoS[Formula: see text] and metallic 1T-Li[Formula: see text]MoS[Formula: see text]

The layered dichalcogenide MoS[Formula: see text] is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS[Formula: see text] to metallic 1T-Li[Formula: see text]MoS[Formula: see text]. With the core hole clock approach at the S L[Formula: see text] X-ray absorption edge we quantify the ultrafast directional charge transfer of excited S3p electrons in-plane ([Formula: see text]) and out-of-plane ([Formula: see text]) for 2H-MoS[Formula: see text] as [Formula: see text] fs and [Formula: see text] fs and for 1T-Li[Formula: see text]MoS[Formula: see text] as [Formula: see text] fs and [Formula: see text] fs. The isotropic charge delocalization of S3p electrons in the semiconducting 2H phase within the S-Mo-S sheets is assigned to the specific symmetry of the Mo-S bonding arrangement. Formation of 1T-Li[Formula: see text]MoS[Formula: see text] by lithiation accelerates the in-plane charge transfer by a factor of [Formula: see text] due to electron injection to the Mo-S covalent bonds and concomitant structural repositioning of S atoms within the S-Mo-S sheets. For excitation into out-of-plane orbitals, an accelerated charge transfer by a factor of [Formula: see text] upon lithiation occurs due to S-Li coupling.

High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography

Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process.