Defect-Induced in Situ Atomic Doping in Transition Metal Dichalcogenides via Liquid-Phase Synthesis toward Efficient Electrochemical Activity

Synergistic Effects of Dual-Doping with Ni and Ru in Monolayer VS2 Nanosheet: Unleashing Enhanced Performance for Acidic HER through Defects and Strain

Amidst the escalating quest for clean energy, the hydrogen evolution reaction (HER) in acidic conditions has taken center stage, catalyzing the search for advanced electrocatalysts. The efficacy of these materials is predominantly dictated by the active site density on their surfaces. The propensity is leveraged for monolayer architectures to introduce defects, enhancing surface area, and increasing active sites. Doping enhances defects and fine-tunes catalyst activity. In this vein, defect-enriched monolayer nanosheets doped with nickel and a trace amount of ruthenium in VS2 (SL-Ni-Ru-VS2 ) are engineered and characterized. Evaluation in 0.5 m H2 SO4 solution unveils that the catalyst achieves overpotentials as low as 20 and 41 mV at current densities of -10 and -100 mA cm⁻2 . Impressively, the catalyst maintains a mass activity of 13.08 A mg⁻¹Ru , even with minimal Ru incorporation, indicating exceptional catalytic efficiency. This monolayer catalyst sustains its high activity at lower overpotentials, demonstrating its practical applicability. The comprehensive analysis, which combines experimental data and computational simulations, indicates that the co-doping of Ni and Ru enhances the electrocatalytic properties of VS2 . This research offers a strategic framework for crafting cutting-edge electrocatalysts specifically designed for enhanced performance in the HER.

Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors

The significance of metal-semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal-semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal-oxide-semiconductor (channel)-semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition.

Use of transition metal dichalcogenides (TMDs) in analytical sample preparation applications

Since the discovery of graphene, nano-sized two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2, MoSe2, MoTe2, NbS2, NbSe2, WS2, WSe2, TaS2 and TaSe2, which have been classified as next-generation nanomaterials resembling graphene (G) have complementary basic properties with those of graphene in terms of their practical applications. TMDs are attracting great attention due to their attractive physical, chemical and electronic properties. Despite being overshadowed by graphene in terms of frequency of use, TMDs have been used frequently in many areas in recent years instead of carbon-based materials such as graphene (G), graphene oxide (GO), carbon nanotubes (CNTs) and nanodiamonds (NDs). It is seen that the first and frequent uses of TMDs, which are classified as new generation materials, are in the fields of catalysis, electronic applications, hydrogen production processes and energy storage, but it has been used as an adsorbent in sample preparation techniques in recent years. Similar to graphene, layers of TMDs are held together by weak van der Waals interactions. The sandwiched layers of TMDs provide sufficient and effective interlayer spaces so that foreign molecules, ions and atoms can easily enter these spaces between the layers. Intermolecular interactions increase with the entry of different materials into these spaces, and thus, high activity, adsorption capacity and efficiency are obtained in adsorption-based analytical sample preparation methods. Although there are about 35 research articles using TMDs, which are classified as promising materials in analytical sample preparation techniques, no review studies have been found. This review, which was designed with this awareness, contains important informations on the properties of metal dichalcogenides, their production methods and their use in analytical sample preparation techniques.

Solvent-assisted sulfur vacancy engineering method in MoS2 for a neuromorphic synaptic memristor

Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial to precisely control chalcogenide vacancies and several methods have already been suggested. However, they have several limitations such as plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method to modulate sulfur vacancies in MoS2. Considering polarity and the Hansen solubility parameter (HSP), three solvents were selected. Sulfur vacancies can be modulated by immersing MoS2 in each solvent, supported by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses. The SAVE method can further expand its application in memory devices representing memristive performance and synaptic behaviors. We represented the charge transport mechanism of sulfur vacancy migration in MoS2. The non-destructive, scalable, and novel SAVE method controlling sulfur vacancies is expected to be a guideline for constructing a vacancy engineering system of TMDs.

Recent Progress in Research on Ferromagnetic Rhenium Disulfide

Since long-range magnetic ordering was observed in pristine Cr₂Ge₂Te₆ and monolayer CrCl₃, two-dimensional (2D) magnetic materials have gradually become an emerging field of interest. However, it is challenging to induce and modulate magnetism in non-magnetic (NM) materials such as rhenium disulfide (ReS₂). Theoretical research shows that defects, doping, strain, particular phase, and domain engineering may facilitate the creation of magnetic ordering in the ReS₂ system. These predictions have, to a large extent, stimulated experimental efforts in the field. Herein, we summarize the recent progress on ferromagnetism (FM) in ReS₂. We compare the proposed methods to introduce and modulate magnetism in ReS₂, some of which have made great experimental breakthroughs. Experimentally, only a few ReS₂ materials exhibit room-temperature long-range ferromagnetic order. In addition, the superexchange interaction may cause weak ferromagnetic coupling between neighboring trimers. We also present a few potential research directions for the future, and we finally conclude that a deep and thorough understanding of the origin of FM with and without strain is very important for the development of basic research and practical applications.

Strategies to improve electrocatalytic performance of MoS2-based catalysts for hydrogen evolution reactions

Electrocatalytic hydrogen evolution reactions (HERs) are a key process for hydrogen production for clean energy applications. HERs have unique advantages in terms of energy efficiency and product separation compared to other methods. Molybdenum disulfide (MoS₂) has attracted extensive attention as a potential HER catalyst because of its high electrocatalytic activity. However, the HER performance of MoS₂ needs to be improved to make it competitive with conventional Pt-based catalysts. Herein, we summarize three typical strategies for promoting the HER performance, i.e., defect engineering, heterostructure formation, and heteroatom doping. We also summarize the computational density functional theory (DFT) methods used to obtain insight that can guide the construction of MoS₂-based materials. Additionally, the challenges and prospects of MoS₂-based catalysts for the HER have also been discussed.

In this review, we summarize three general classes of effective strategies to enhance the HER activity of MoS₂ and DFT calculation methods, i.e. defect engineering, heterostructure formation, and heteroatom doping.

The effect of heteroatom doping on the active metal site of CoS2 for hydrogen evolution reaction

The exploration of cost-effective hydrogen evolution reaction (HER) electrocatalysts through water splitting is important for developing clean energy technology and devices. The application of CoS₂ in HER has been drawing more and more attention due to its low cost and relatively satisfactory HER catalytic performance. And CoS₂ was found to exhibit excellent HER catalytic performance after appropriate doping according to other experimental investigations. However, the theoretical simulation and the intrinsic catalytic mechanism of CoS₂ remains insufficiently investigated. Therefore, in this study, density functional theory is used to investigate the HER catalytic activity of CoS₂ doped with a heteroatom. The results show that Pt-, N- and O-doped CoS₂ demonstrates smaller Gibbs free energies close to that of Pt, compared with the original CoS₂ and CoS₂ doped with other atoms. Furthermore, HER catalytic performance of CoS₂ can be improved by tuning d-band centers of H adsorption sites. This study provides an effective method to achieve modified CoS₂ for high-performance HER and to investigate other transition metal sulfides as HER electrode.

The linear relationship between ΔG_H* and d-band centers of H adsorption sites.

Defect Engineering of Out-of-Plane Charge Transport in van der Waals Heterostructures for Bi-Direction Photoresponse

Defects are ubiquitous in two-dimensional (2D) transition-metal dichalcogenides (TMDs), generated by the initial growth- or the postprocessing. However, the defects may play negative roles in the photoelectronic properties of TMDs due to the reduction of in-plane transport of carriers. In this work, we demonstrate that the Se-vacancy defects in MoSe₂ side of the van der Waal heterostructure is able to switch direction of out-of-plane charge transport. Photoresponse spectra showed defect density enable modified surface potential of MoSe_2-x, leading to the barrier reverse between graphene and MoSe_2-x and switches of the photoresponse from the negative to the positive. This unexpected property stemmed from appearance of midgap states by defects at heterostructure, as demonstrated by the density functional theory calculation and scanning tunneling microscope results. MoSe_2-0.2/graphene heterostructure has a broadband response ranging from 450 to 1064 nm and exhibits comparable or higher positive responsivity (5.4 × 10³ A/W to -15.3 × 10³ A/W at 632.8 and 5.7 × 10³ A/W to -1.2 × 10³ A/W at 1064 nm) to the negative one of the pristine MoSe₂/graphene. Based on defect-engineered heterostructures, we construct optoelectronic OR and AND logic devices with a broadband operation. Our work elucidates an alternative avenue to tailor the out-of-plane charge transport in TMD-based heterostructure through defects, and potentially invokes applicable utilization for 2D photodetectors and optoelectronic logic gates.

Solution-Processed MoS2 Film with Functional Interfaces via Precursor-Assisted Chemical Welding

Molybdenum disulfide (MoS₂) presents fascinating properties for next-generation applications in diverse fields. However, fully exploiting the best properties of MoS₂ in largescale practical applications still remains a challenge due to lack of proper processing methods. Solution-based processing can be a promising route for scalable production of MoS₂ nanosheets, but the resulting assembled film possesses an enormous number of interfaces that significantly compromise the intrinsic electrical properties. Herein, we demonstrate the solution processing of MoS₂ and subsequent precursor-assisted chemical welding to form defective MoS_2-x at the nanosheet interfaces. The formation of defective MoS_2-x significantly reduces the electrical contact resistances, and thus the chemically welded MoS₂ film exhibits more than 2 orders of magnitude improved electrical conductivity. Furthermore, the chemical welding provides MoS_2-x interface induced additional defect originated functionalities for diverse applications such as broadband photodetection over the near-infrared range and improved electrocatalytic activity for hydrogen evolution reactions. Overall, this precursor-assisted chemical welding strategy can be a facile route to produce high-quality MoS₂ films with low-quality defective MoS_2-x at the interfaces having multifunctionalities in electronics, optoelectronics, and electrocatalysis.