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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Geohegan DB, Puretzky AA, Xiao K. Growing tunable moiré matter. NATURE MATERIALS 2024; 23:308-309. [PMID: 37580370 DOI: 10.1038/s41563-023-01618-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Affiliation(s)
- David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
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3
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Xu M, Ji H, Zheng L, Li W, Wang J, Wang H, Luo L, Lu Q, Gan X, Liu Z, Wang X, Huang W. Reconfiguring nucleation for CVD growth of twisted bilayer MoS 2 with a wide range of twist angles. Nat Commun 2024; 15:562. [PMID: 38233382 PMCID: PMC10794196 DOI: 10.1038/s41467-023-44598-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Accepted: 12/20/2023] [Indexed: 01/19/2024] Open
Abstract
Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS2 with twist angles from 0° to 120°. The twist angles-dependent Moiré periodicity can be clearly observed, and the interlayer coupling shows a strong relationship to the twist angles. Moreover, the yield of TB-MoS2 in bilayer MoS2 and density of TB-MoS2 are significantly improved to 17.2% and 28.9 pieces/mm2 by tailoring gas flow rate and molar ratio of NaCl to MoO3. The proposed reconfiguring nucleation approach opens an avenue for the precise growth of TB-TMDCs for both fundamental research and practical applications.
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Affiliation(s)
- Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Hongjia Ji
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Hanxin Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Qianbo Lu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore, 637553, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211800, P. R. China.
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Ren H, Zhong J, Xiang G. The Progress on Magnetic Material Thin Films Prepared Using Polymer-Assisted Deposition. Molecules 2023; 28:5004. [PMID: 37446666 DOI: 10.3390/molecules28135004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Accepted: 06/24/2023] [Indexed: 07/15/2023] Open
Abstract
Polymer-assisted deposition (PAD) has been widely used in the preparation of high-quality oxides and sulfides for basic research and applications. Specifically, diverse PAD-prepared magnetic material thin films such as ZnO, Ga2O3, SrRuO3, LaCoO3, LaMnO3, Y3Fe5O12, MoS2, MoSe2, and ReS2 thin films have been grown, in which thickness-dependent, strain-modulated, doping-mediated, and/or morphology-dependent room-temperature ferromagnetism (RTFM) have been explored. Inspired by the discovery of intrinsic low-temperature FM in two-dimensional (2D) systems prepared using mechanical exfoliation, the search for more convenient methods to prepare 2D ferromagnetic materials with high-temperature FM has seen explosive growth, but with little success. Fortunately, the very recent synthesis of 2D NiO by PAD has shed light on this challenge. Based on these abovementioned developments, the difficulties of PAD when preparing a-few-nanometer single-crystalline materials and the opportunities in PAD for novel materials such as chiral magnetic soliton material Cr1/3NbS2 are discussed.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Liaocheng 252000, China
| | - Jing Zhong
- College of Physics, Sichuan University, Chengdu 610064, China
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610064, China
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Yang P, Liu F, Li X, Hu J, Zhou F, Zhu L, Chen Q, Gao P, Zhang Y. Highly Reproducible Epitaxial Growth of Wafer-Scale Single-Crystal Monolayer MoS 2 on Sapphire. SMALL METHODS 2023:e2300165. [PMID: 37035951 DOI: 10.1002/smtd.202300165] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 03/13/2023] [Indexed: 06/19/2023]
Abstract
2D semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next-generation transistors. To meet the industry needs, large-scale production of single-crystal monolayer TMDs in highly reproducible and energy-efficient manner is critically significant. Herein, it is reported that the high-reproducible, high-efficient epitaxial growth of wafer-scale monolayer MoS2 single crystals on the industry-compatible sapphire substrates, by virtue of a deliberately designed "face-to-face" metal-foil-based precursor supply route, carbon-cloth-filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short-distance transport, and moderate deposition of metal precursor on a wafer-scale substrate, affording high-efficient and high-reproducible growth of wafer-scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer-scale single-crystal 2D materials, thus propelling their practical applications in highly integrated high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fachen Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xuan Li
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qing Chen
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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Ren H, Xiang G. Recent Progress in Research on Ferromagnetic Rhenium Disulfide. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3451. [PMID: 36234579 PMCID: PMC9565357 DOI: 10.3390/nano12193451] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 09/26/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Since long-range magnetic ordering was observed in pristine Cr2Ge2Te6 and monolayer CrCl3, two-dimensional (2D) magnetic materials have gradually become an emerging field of interest. However, it is challenging to induce and modulate magnetism in non-magnetic (NM) materials such as rhenium disulfide (ReS2). Theoretical research shows that defects, doping, strain, particular phase, and domain engineering may facilitate the creation of magnetic ordering in the ReS2 system. These predictions have, to a large extent, stimulated experimental efforts in the field. Herein, we summarize the recent progress on ferromagnetism (FM) in ReS2. We compare the proposed methods to introduce and modulate magnetism in ReS2, some of which have made great experimental breakthroughs. Experimentally, only a few ReS2 materials exhibit room-temperature long-range ferromagnetic order. In addition, the superexchange interaction may cause weak ferromagnetic coupling between neighboring trimers. We also present a few potential research directions for the future, and we finally conclude that a deep and thorough understanding of the origin of FM with and without strain is very important for the development of basic research and practical applications.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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Miakota DI, Unocic RR, Bertoldo F, Ghimire G, Engberg S, Geohegan D, Thygesen KS, Canulescu S. A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors. NANOSCALE 2022; 14:9485-9497. [PMID: 35748506 DOI: 10.1039/d2nr01863b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Chemical vapor deposition (CVD) has been established as a versatile route for the large-scale synthesis of transition metal dichalcogenides, such as tungsten disulfide (WS2). Yet, the precursor composition's role on the CVD process remains largely unknown and remains to be explored. Here, we employ Pulsed Laser Deposition (PLD) in a two-stage approach to tune the oxygen content in the tungsten oxide (WO3-x) precursors and demonstrate the presence of oxygen vacancies in the oxide films leads to a more facile conversion from WO3-x to WS2. Using a joint study based on ab initio density functional theory (DFT) calculations and experimental observations, we unravel that the oxygen vacancies in WO3-x can serve as niches through which sulfur atoms enter the lattice and facilitate an efficient conversion into WS2 crystals. By solely modulating the precursor stoichiometry, the photoluminescence emission of WS2 crystals can be significantly enhanced. Atomic resolution scanning transmission electron microscopy imaging (STEM) reveals that tungsten vacancies are the dominant intrinsic defects in mono- and bilayers WS2. Moreover, bi- and multilayer WS2 crystals derived from oxides with a high V0 content exhibit dominant AA'/AB or AA(A…) stacking orientations. The atomic resolution images reveal local strain buildup in bilayer WS2 due to competing effects of complex grain boundaries. Our study provides means to tune the precursor composition to control the lateral growth of TMDs while revealing insights into the different pathways for forming grain boundaries in bilayer WS2.
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Affiliation(s)
- Denys I Miakota
- Department of Photonics Engineering, Technical University of Denmark, DK-4000 Roskilde, Denmark.
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Fabian Bertoldo
- CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Ganesh Ghimire
- Department of Photonics Engineering, Technical University of Denmark, DK-4000 Roskilde, Denmark.
| | - Sara Engberg
- Department of Photonics Engineering, Technical University of Denmark, DK-4000 Roskilde, Denmark.
| | - David Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Kristian S Thygesen
- CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Stela Canulescu
- Department of Photonics Engineering, Technical University of Denmark, DK-4000 Roskilde, Denmark.
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Zhang X, Hua S, Lai L, Wang Z, Liao T, He L, Tang H, Wan X. Strategies to improve electrocatalytic performance of MoS 2-based catalysts for hydrogen evolution reactions. RSC Adv 2022; 12:17959-17983. [PMID: 35765324 PMCID: PMC9204562 DOI: 10.1039/d2ra03066g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 06/13/2022] [Indexed: 02/01/2023] Open
Abstract
Electrocatalytic hydrogen evolution reactions (HERs) are a key process for hydrogen production for clean energy applications. HERs have unique advantages in terms of energy efficiency and product separation compared to other methods. Molybdenum disulfide (MoS2) has attracted extensive attention as a potential HER catalyst because of its high electrocatalytic activity. However, the HER performance of MoS2 needs to be improved to make it competitive with conventional Pt-based catalysts. Herein, we summarize three typical strategies for promoting the HER performance, i.e., defect engineering, heterostructure formation, and heteroatom doping. We also summarize the computational density functional theory (DFT) methods used to obtain insight that can guide the construction of MoS2-based materials. Additionally, the challenges and prospects of MoS2-based catalysts for the HER have also been discussed.
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Affiliation(s)
- Xinglong Zhang
- School of Materials and Energy, University of Electronic Science and Technology of China Chengdu 611731 P. R. China
| | - Shiying Hua
- Wuhan Institute of Marine Electric Propulsion Wuhan 430064 P. R. China
| | - Long Lai
- School of Materials and Energy, University of Electronic Science and Technology of China Chengdu 611731 P. R. China
| | - Zihao Wang
- School of Materials and Energy, University of Electronic Science and Technology of China Chengdu 611731 P. R. China
| | - Tiaohao Liao
- School of Materials and Energy, University of Electronic Science and Technology of China Chengdu 611731 P. R. China
| | - Liang He
- School of Mechanical Engineering, Sichuan University Chengdu 610065 P. R. China
| | - Hui Tang
- School of Materials and Energy, University of Electronic Science and Technology of China Chengdu 611731 P. R. China
| | - Xinming Wan
- China Automotive Engineering Research Institute Co., Ltd. Chongqing 401122 P. R. China
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Ren H, Xiang G. Strain-Modulated Magnetism in MoS 2. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1929. [PMID: 35683784 PMCID: PMC9182138 DOI: 10.3390/nano12111929] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Revised: 05/26/2022] [Accepted: 06/01/2022] [Indexed: 11/16/2022]
Abstract
Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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Ren Y, Zhang L, Zhu X, Li H, Dong Q, Liu S. Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:254002. [PMID: 35358958 DOI: 10.1088/1361-648x/ac6309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Accepted: 03/31/2022] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.
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Affiliation(s)
- Yizhang Ren
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ling Zhang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xukun Zhu
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Qizhi Dong
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
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11
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Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
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Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
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Xia R, Jiang S, Chen S, Yang B, Fu J, Yang J, Gao M. Formation of Moiré Superlattices via Surfactant/Nanosheet-Co-mediated Crystallization. J Phys Chem Lett 2021; 12:7901-7907. [PMID: 34382792 DOI: 10.1021/acs.jpclett.1c01735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Moiré superlattices (MSLs) of two-dimensional (2D) van der Waals materials have attracted considerable attention in recent years; however, studies of bottom-up growth of twisted MSL structures via solution-processed crystallization are rarely reported. Through facile one-pot solvothermal synthesis, here we demonstrate a nonclassical surfactant/nanosheet-co-mediated crystallization pathway for formation of MSL structures with two models of SnS2 and SnSe2. Our experimental results reveal that attractive interactions between 2D inorganic building blocks and surfactant organic molecules during the initial stage of crystallization are crucial to drive surfactant-covered nanosheets to crystallize into molecule-intercalated nanosheet aggregates. Under the high-pressure condition, further crystallograpic fusion can occur if the reaction time is prolonged, which alters the interactions of adjacent layers during the coalescence of small-grain-size 2D domains due to insertion of foreign molecules, leading to interlayer rotations. This work uncovers an interesting organic-inorganic cocrystallization growth mode and provides a novel pathway for large-scale fabrication of MSLs.
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Affiliation(s)
- Rui Xia
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Subin Jiang
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Songbo Chen
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Baojuan Yang
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiecai Fu
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiao Yang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, P. R. China
| | - Meizhen Gao
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
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