Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Organoborane Se and Te Precursors for Controlled Modulation of Reactivity in Nanomaterial Synthesis

To exploit the distinctive optoelectrical properties of nanomaterials, precise control over the size, morphology, and interface structure is essential. Achieving a controlled synthesis demands precursors with tailored reactivity and optimal reaction temperatures. Here, we introduce organoborane-based selenium and tellurium precursors borabicyclononane-selenol (BBN-SeH) and tellurol (BBN-TeH). The reactivity of these precursors can be modified by commercially available additives, covering a wide range of intermediate reactivity and filling significant reactivity gaps in existing options. By allowing systematic adjustment of growth conditions, they achieve the controlled growth of quantum dots of various sizes and materials. Operating via a surface-assisted conversion mechanism, these precursors rely on surface coordination for activation and undergo quantitative deposition on coordinating surfaces. These properties allow precise control over the radial distribution and density of different chalcogenide atoms within the nanoparticles. Diborabicyclononanyl selane ((BBN)2Se), an intermediate from the BBN-SeH synthesis, can also serve as a selenium precursor. While BBN-SeH suppresses nucleation, (BBN)2Se exhibits efficient nucleation under specific conditions. By leveraging these distinct activation behaviors, we achieved a controlled synthesis of thermally stable nanoplates with different thicknesses. This study not only bridges critical reactivity gaps but also provides a systematic methodology for precise nanomaterial synthesis.

Effective Charge Collection of Electron Transport Layers for High-Performance Quantum Dot Infrared Solar Cells

Infrared (IR) solar cells, capable of converting low-energy IR photons to electron-hole pairs, are promising optoelectronic devices by broadening the utilization range of the solar spectrum to the short-wavelength IR region. The emerging PbS colloidal quantum dot (QD) IR solar cells attract much attention due to their tunable band gaps in the IR region, potential multiple exciton generation, and facile solution processing. In PbS QD solar cells, ZnO is commonly utilized as an electron transport layer (ETL) to establish a depleted heterostructure with a QD photoactive layer. However, band gap shrinkage of large PbS QDs makes it necessary to tailor the behaviors of the ZnO ETL for efficient carrier extraction in the devices. Herein, the characteristics of ZnO ETL are efficiently and flexibly tailored to match the QD layer by handily adjusting the postannealing process of ZnO ETL. With a suitable temperature, the well-matched energy level alignment and suppressed trap states are simultaneously achieved in the ZnO ETL, effectively reducing the nonradiative recombination and accelerating the electron injection from the QD layer to ETL. As a consequence, a high-performance PbS QD photovoltaic device with power conversion efficiencies (PCEs) of 10.09% and 1.37% is obtained under AM 1.5 and 1100 nm filtered solar illumination, demonstrating a simple and effective approach for achieving high-performance IR photoelectric devices.

Nanostructured PbSe Films Deposited by Spray Pyrolysis Using PbSe Colloidal Solutions

This work describes the spray pyrolysis deposition of PbSe films, using as-prepared PbSe colloids as the starting solution. The PbSe colloids were prepared by using the alkahest approach, where Pb and Se precursors were made to react with the following green polyols: glycerin, ethylene glycol, and propylene glycol, to subsequently spray them onto glass substrates. The results of the characterization indicated that amine or thiol groups-free and single-phase rock-salt cubic PbSe powder was obtained, producing nanocrystals 16-30 nm in size. X-ray diffraction also showed that the PbSe films containing PbSeO3 and PbO·xH2O as impurity phases were produced during the deposition. The morphology of the powders and films was developed by a self-assembly process, in which the primary PbSe nanoparticles self-assemble to produce peanut-like microstructures. Additionally, a non-continuous and porous feature was formed in the thick films. Certain films revealed optical structures characterized by broad- and low-intensity bands resembling an exciton-like behavior. This could be attributed to the presence of nanocrystals with a size less than the Bohr radius, indicating reminiscent quantum effects. The results suggest that the usage of colloidal dispersions as spray solutions represents an effective approach to forming PbSe films, as well as that the synthesis method allows for the elimination of thiol and amine groups before deposition, significantly simplifying the process.

Boosting the Photoluminescence Efficiency of InAs Nanocrystals Synthesized with Aminoarsine via a ZnSe Thick-Shell Overgrowth

InAs-based nanocrystals can enable restriction of hazardous substances (RoHS) compliant optoelectronic devices, but their photoluminescence efficiency needs improvement. We report an optimized synthesis of InAs@ZnSe core@shell nanocrystals allowing to tune the ZnSe shell thickness up to seven mono-layers (ML) and to boost the emission, reaching a quantum yield of ≈70% at ≈900 nm. It is demonstrated that a high quantum yield can be attained when the shell thickness is at least ≈3ML. Notably, the photoluminescence lifetimeshows only a minor variation as a function of shell thickness, whereas the Auger recombination time (a limiting aspect in technological applications when fast) slows down from 11 to 38 ps when increasing the shell thickness from 1.5 to 7MLs. Chemical and structural analyses evidence that InAs@ZnSe nanocrystals do not exhibit any strain at the core-shell interface, likely due to the formation of an InZnSe interlayer. This is supported by atomistic modeling, which indicates the interlayer as being composed of In, Zn, Se and cation vacancies, alike to the In2 ZnSe4 crystal structure. The simulations reveal an electronic structure consistent with that of type-I heterostructures, in which localized trap states can be passivated by a thick shell (>3ML) and excitons are confined in the core.

Merging Passivation in Synthesis Enabling the Lowest Open-Circuit Voltage Loss for PbS Quantum Dot Solar Cells

The high open-circuit voltage (V_oc ) loss arising from insufficient surface passivation is the main factor that limits the efficiency of current lead sulfide colloidal quantum dots (PbS CQDs) solar cell. Here, synergistic passivation is performed in the direct synthesis of conductive PbS CQD inks by introducing multifunctional ligands to well coordinate the complicated CQDs surface with the thermodynamically optimal configuration. The improved passivation effect is intactly delivered to the final photovoltaic device, leading to an order lower surface trap density and beneficial doping behavior compared to the control sample. The obtained CQD inks show the highest photoluminescence quantum yield (PLQY) of 24% for all photovoltaic PbS CQD inks, which is more than twice the reported average PLQY value of ≈10%. As a result, a high V_oc of 0.71 V and power conversion efficiency (PCE) of 13.3% is achieved, which results in the lowest V_oc loss (0.35 eV) for the reported PbS CQD solar cells with PCE >10%, comparable to that of perovskite solar cells. This work provides valuable insights into the future CQDs passivation strategies and also demonstrates the great potential for the direct-synthesis protocol of PbS CQDs.

Cation-Exchange Enables In Situ Preparation of PbSe Quantum Dot Ink for High Performance Solar Cells

Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for optoelectronic applications. To date, PbSe CQDs capped by halide ligands exhibit improved stability and solar cells using these CQDs as active layers have reported a remarkable power conversion efficiency (PCE) up to 10%. However, PbSe CQDs are more prone to oxidation, requiring delicate control over their processability and compromising their applications. Herein, an efficient strategy that addresses this issue by an in situ cation-exchange process is reported. This is achieved by a two-phase ligand exchange process where PbI₂ serves as both a passivating ligand and cation-source inducing transformation of CdSe to PbSe. The defect density and carrier lifetime of PbSe CQD films are improved to 1.05 × 10¹⁶  cm^-3 and 12.2 ns, whereas the traditional PbSe CQD films possess 1.9 × 10¹⁶  cm^-3 defect density and 10.2 ns carrier lifetime. These improvements are translated into an enhancement of photovoltaic performance of PbSe solar cells, with a PCE of up to 11.6%, ≈10% higher than the previous record. Notably, the approach enables greatly improved stability and a two-month stability is successfully demonstrated. This strategy is expected to promote the fast development of PbSe CQD applications in low-cost and high-performance optoelectronic devices.

A Novel and Cost-Effective CsVO3 Quantum Dots for Optoelectronic and Display Applications

Quantum dots (QDs) have an unparalleled ability to mimic true colors due to their size-tunable optical and electronic properties, which make them the most promising nanoparticles in various fields. Currently, the majority of QDs available in the market are cadmium, indium, and lead-based materials but the toxicity and unstable nature of these QDs restricts their industrial and practical applications. To avoid using heavy metal ions, especially cadmium, the current research is focused on the fabrication of perovskite and vanadate QDs. Herein, we report the facile synthesis of a novel and cost-effective CsVO₃ QDs for the first time. The sizes of the CsVO₃ QDs produced were tuned from 2 to 10 nm by varying the reaction temperature from 140 to 190 °C. On increasing QD size, a continuous red shift was observed in absorption and emission spectra, signifying the presence of quantum confinement. In addition, along with CsVO₃ QDs, the CsVO₃ nanosheets self-assembled microflower-like particles were found as residue after the centrifugation; the X-ray diffraction indicated an orthorhombic structure. Under 365 nm excitation, these CsVO₃ microflower-like particles exhibited broad emission with CIE coordinates in the white emission region. The acquired results suggest that CsVO₃ QDs may represent a new class of cadmium-free materials for optoelectronic and biomedical applications.

ZnCl2 Mediated Synthesis of InAs Nanocrystals with Aminoarsine

The most developed approaches for the synthesis of InAs nanocrystals (NCs) rely on pyrophoric, toxic, and not readily available tris-trimethylsilyl (or tris-trimethylgermil) arsine precursors. Less toxic and commercially available chemicals, such as tris(dimethylamino)arsine, have recently emerged as alternative As precursors. Nevertheless, InAs NCs made with such compounds need to be further optimized in terms of size distribution and optical properties in order to meet the standard reached with tris-trimethylsilyl arsine. To this aim, in this work we investigated the role of ZnCl₂ used as an additive in the synthesis of InAs NCs with tris(dimethylamino)arsine and alane N,N-dimethylethylamine as the reducing agent. We discovered that ZnCl₂ helps not only to improve the size distribution of InAs NCs but also to passivate their surface acting as a Z-type ligand. The presence of ZnCl₂ on the surface of the NCs and the excess of Zn precursor used in the synthesis enable the subsequent in situ growth of a ZnSe shell, which is realized by simply adding the Se precursor to the crude reaction mixture. The resulting InAs@ZnSe core@shell NCs exhibit photoluminescence emission at ∼860 nm with a quantum yield as high as 42±4%, which is a record for such heterostructures, given the relatively high mismatch (6%) between InAs and ZnSe. Such bright emission was ascribed to the formation, under our peculiar reaction conditions, of an In–Zn–Se intermediate layer between the core and the shell, as indicated by X-ray photoelectron spectroscopy and elemental analyses, which helps to release the strain between the two materials.

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 to 2500 nm near-infrared illumination

We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 10⁷Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction

Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.

PbS1−xSex-Quantum-Dot@MWCNT/P3HT Nanocomposites with Tunable Photoelectric Conversion Performance

The photoelectric performance of quantum dots (QDs)-based nanocomposites is closely related to the optical properties of QDs, which play a critical role in the optical absorption and separation/transfer of charge carriers. Herein, we report a nanocomposite composed of light absorber PbS1−xSex quantum dots (QDs), electron-conducting multiwalled carbon nanotubes (MWCNTs) and hole-conducting poly-3-hexylthiophene (P3HT) with tunable photoelectric conversion performance. In addition to using the quantization effect, we proposed solid-solution PbS1−xSex QDs (x = 0, 0.25, 0.5, 0.75, 1) for band gap engineering. In particular, we successfully synthesized relatively small (~5.3 nm) and uniform QDs via the hot-injection method by using PbCl2, S/Se powder and environmentally friendly oleylamine (OLA) as the precursors and/or solvent. By increasing the content of Se, the band gap of PbS1−xSex QDs decreased along with the decrease in the conduction band and valence band edges. The suitable energy level alignment enabled the efficient transfer of photoinduced charge carriers, and hence a much higher photoelectric conversion performance of the PbS1−xSex-QD@MWCNT/P3HT nanocomposites than the individual QDs, P3HT, and binary PbS1−xSex-QD@MWCNT, as well as the best performance, was achieved over PbS0.75Se0.25-QD@MWCNT/P3HT.

Recent Advances and Prospects in Colloidal Nanomaterials

Colloidal nanomaterials of metals, metal oxides, and metal chalcogenides have attracted great attention in the past decade owing to their potential applications in optoelectronics, catalysis, and energy conversion. Introduction of various synthetic routes has resulted in diverse colloidal nanostructured materials with well-controlled size, shape, and composition, enabling the systematic study of their intriguing physicochemical, optoelectronic, and chemical properties. Furthermore, developments in the instrumentation have offered valuable insights into the nucleation and growth mechanism of these nanomaterials, which are crucial in designing prospective materials with desired properties. In this perspective, recent advances in the colloidal synthesis and mechanism studies of nanomaterials of metal chalcogenides, metals, and metal oxides are discussed. In addition, challenges in the characterization and future direction of the colloidal nanomaterials are provided.

Room-Temperature Direct Synthesis of PbSe Quantum Dot Inks for High-Detectivity Near-Infrared Photodetectors

A PbSe colloidal quantum dot (QD) is typically a solution-processed semiconductor for near-infrared (NIR) optoelectronic applications. However, the wide application of PbSe QDs has been restricted due to their instability, which requires tedious synthesis and complicated treatments before being applied in devices. Here, we demonstrate efficient NIR photodetectors based on the room-temperature, direct synthesis of semiconducting PbSe QD inks. The in-situ passivation and the avoidance of ligand exchange endow PbSe QD photodetectors with high efficiency and low cost. By further constructing the PbSe QDs/ZnO heterostructure, the photodetectors exhibit the NIR responsivity up to 970 mA/W and a detectivity of 1.86 × 10¹¹ Jones at 808 nm. The obtained performance is comparable to that of the state-of-the-art PbSe QD photodetectors using a complex ligand exchange strategy. Our work may pave a new way for fabricating efficient and low-cost colloidal QD photodetectors.

Atomic Identification of Interfaces in Individual Core@shell Quantum Dots

CdSe@CdS Core@shell quantum dots (QDs) have been widely studied in recent years, due to their architecture which allows to tailor properties by controlling structure and composition. However, since CdSe and CdS have the same crystal structure, same cations, and similar lattice parameters, it is very challenging to image the interface. Herein, high-resolution transmission electron microscopy, high-angle annular dark-field imaging, and energy-dispersive X-ray spectroscopy elemental mapping are combined to characterize the core@shell structure and identify the interface in the CdSe@CdS QDs with different CdS shell thicknesses. By examining changes in lattice spacing in an individual CdSe@CdS quantum dot, the atomic core@shell interface is identified. For thin-shelled QDs, an ideal coherent interface forms between core and shell due to the small lattice mismatch, and the lattice spacing remains unchanged at the core and shell regions. For thick-shelled QDs, the lattice spacing is different at the core and shell regions, while the heterostructured interface is still coherent and cannot be clearly imaged. As the shell thickness further increases, a sharp core@shell interface appears. The results define an approach to characterize the heterostructure of two materials with the same crystalline structure and cations.