Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices

Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques

For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature-size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low-dimensional materials have provided new opportunities for constructing small feature-size transistors due to their superior electrical properties compared to silicon. Here, state-of-the-art low-dimensional materials-based transistors with small feature-sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano-gate structure, and nanofabrication techniques to achieve small feature-sizes of transistors. A comprehensive summary of these small feature-size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature-size transistors based on low-dimensional materials in further reducing the small footprint is also clarified and their cutting-edge applications are highlighted. Finally, a comparison and analysis between state-of-art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials-based small feature-size transistors is briefly outlined.

Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal

Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W5N6 over lower metal nitrides. Comprehensive structural and electronic characterization reveals that monolayer W5N6 can be synthesized at large scale and shows semimetallic behavior with an intriguing indirect band structure. Moreover, the material exhibits exceptional resilience against mechanical damage and chemical reactions. Leveraging these electronic properties and robustness, we demonstrate the application of W5N6 as atomic-scale dry etch stops that allow the integration of high-performance 2D materials contacts. These findings highlight the potential of 2D transition metal nitrides for realizing advanced electronic devices and functional interfaces.

Ultrashort vertical-channel MoS2 transistor using a self-aligned contact

Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process.

Atomic layer deposition assisted fabrication of large-scale metal nanogaps for surface enhanced Raman scattering

Metal nanogaps can confine electromagnetic field into extremely small volumes, exhibiting strong surface plasmon resonance effect. Therefore, metal nanogaps show great prospects in enhancing light-matter interaction. However, it is still challenging to fabricate large-scale (centimeter scale) nanogaps with precise control of gap size at nanoscale, limiting the practical applications of metal nanogaps. In this work, we proposed a facile and economic strategy to fabricate large-scale sub-10 nm Ag nanogaps by the combination of atomic layer deposition (ALD) and mechanical rolling. The plasmonic nanogaps can be formed in the compacted Ag film by the sacrificial Al₂O₃deposited via ALD. The size of nanogaps are determined by the twice thickness of Al₂O₃with nanometric control. Raman results show that SERS activity depends closely on the nanogap size, and 4 nm Ag nanogaps exhibit the best SERS activity. By combining with other porous metal substrates, various sub-10 nm metal nanogaps can be fabricated over large scale. Therefore, this strategy will have significant implications for the preparation of nanogaps and enhanced spectroscopy.

Two dimensional semiconducting materials for ultimately scaled transistors

Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Plasmonic Gold Trimers and Dimers with Air-Filled Nanogaps

The subwavelength confinement of light energy in the nanogaps formed between adjacent plasmonic nanostructures provides the foundational basis for nanophotonic applications. Within this realm, air-filled nanogaps are of central importance because they present a cavity where application-specific nanoscale objects can reside. When forming such configurations on substrate surfaces, there is an inherent difficulty in that the most technologically relevant nanogap widths require closely spaced nanostructures separated by distances that are inaccessible through standard electron-beam lithography techniques. Herein, we demonstrate an assembly route for the fabrication of aligned plasmonic gold trimers with air-filled vertical nanogaps having widths that are defined with spatial controls that exceed those of lithographic processes. The devised procedure uses a sacrificial oxide layer to define the nanogap, a glancing angle deposition to impose a directionality on trimer formation, and a sacrificial antimony layer whose sublimation regulates the gold assembly process. By further implementing a benchtop nanoimprint lithography process and a glancing angle ion milling procedure as additional controls over the assembly, it is possible to deterministically position trimers in periodic arrays and extend the assembly process to dimer formation. The optical response of the structures, which is characterized using polarization-dependent spectroscopy, surface-enhanced Raman scattering, and refractive index sensitivity measurements, shows properties that are consistent with simulation. This work, hence, forwards the wafer-based processing techniques needed to form air-filled nanogaps and place plasmonic energy at site-specific locations.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology

With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry. In this paper, we report the applications of ultra-thin atomic layer deposition nanofilm in the advanced aerospace manufacturing industry, including aluminum anti-oxidation and secondary electron suppression, which are critical in high-power and miniaturization development. The compact and uniform aluminum oxide film, which is formed by thermal atomic layer deposition (ALD), can prevent the deep surface oxidation of aluminum during storage, avoiding the waste of material and energy in repetitive production. The total secondary electron yield of the C/TiN component nanofilm, deposited through plasma-enhanced atomic layer deposition, decreases 25% compared with an uncoated surface. The suppression of secondary electron emission is of great importance in solving the multipactor for high-power microwave components in space. Moreover, the controllable, ultra-thin uniform composite nanofilm can be deposited directly on the complex surface of devices without any transfer process, which is critical for many different applications. The ALD nanofilm shows potential for promoting system performance and resource consumption in the advanced aerospace manufacturing industry.

High sensitivity bolometers based on metal nanoantenna dimers with a nanogap filled with vanadium dioxide

One critical factor for bolometer sensitivity is efficient electromagnetic heating of thermistor materials, which plasmonic nanogap structures can provide through the electric field enhancement. In this report, using finite element method simulation, electromagnetic heating of nanorod dimer antennas with a nanogap filled with vanadium dioxide (VO₂) was studied for long-wavelength infrared detection. Because VO₂ is a thermistor material, the electrical resistance between the two dimer ends depends on the dimer’s temperature. The simulation results show that, due to the high heating ability of the nanogap, the temperature rise is several times higher than expected from the areal coverage. This excellent performance is observed over various nanorod lengths and gap widths, ensuring wavelength tunability and ultrafast operating speed, thereby making the dimer structures a promising candidate for high sensitivity bolometers.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.