Doping Graphene with Substitutional Mn

Single atoms and metal nanoclusters anchored to graphene vacancies

Fabricating dispersed single atoms and size-controlled metal nanoclusters remains a difficult challenge due to sintering. Here, we demonstrate that atoms and clusters can be immobilized using atomically clean defect-engineered graphene as the matrix. The graphene is first cleaned of surface contamination with laser heating, after which low-energy Ar irradiation is used to create spatially well-separated vacancies into it. Metal atoms are then evaporated either via thermal or ebeam evaporation onto graphene, where they diffuse until being trapped into a vacancy. The density of embedded structures can be controlled through irradiation dose, and the size of the structures through evaporation time. The resulting structures are confirmed through atomic-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. We demonstrate here incorporation of Al, Ti, Fe, Ag and Au single atoms or nanoclusters, but the method should work equally well for other elements.

Achieving High Substitutional Incorporation in Mn-Doped Graphene

Despite its broad potential applications, substitution of carbon by transition metal atoms in graphene has so far been explored only to a limited extent. We report the realization of substitutional Mn doping of graphene to a record high atomic concentration of 0.5%, which was achieved using ultralow-energy ion implantation. By correlating the experimental data with the results of ab initio Born-Oppenheimer molecular dynamics calculations, we infer that direct substitution is the dominant mechanism of impurity incorporation. Thermal annealing in ultrahigh vacuum provides efficient removal of surface contaminants and additional implantation-induced disorder, resulting in Mn-doped graphene that, aside from the substitutional Mn impurities, is essentially as clean and defect-free as the as-grown layer. We further show that the Dirac character of graphene is preserved upon substitutional Mn doping, even in this high concentration regime, making this system ideal for studying the interaction between Dirac conduction electrons and localized magnetic moments. More generally, these results show that ultralow energy ion implantation can be used for controlled functionalization of graphene with substitutional transition-metal atoms, of relevance for a wide range of applications, from magnetism and spintronics to single-atom catalysis.

High-Entropy Materials in Electrocatalysis: Understanding, Design, and Development

Electrocatalysis is a crucial method for achieving global carbon neutrality, serving as an essential means of energy conversion, and electrocatalyst is crucial in the process of electrocatalysis. Because of the abundant active sites, the multi-component synergistic effect of high-entropy materials has a wide application prospect in the field of electrocatalysis. Moreover, due to the special structure of high-entropy materials, it is possible to obtain almost continuous adsorption energy distribution by regulating the composition, which has attracted extensive attention of researchers. This paper reviews the properties and types of high-entropy materials, including alloys and compounds. The synthesis strategies of high-entropy materials are systematically introduced, and the solid phase synthesis, liquid-phase synthesis, and gas-phase synthesis are classified and summarized. The application of high-entropy materials in electrocatalysis is summarized, and the promotion effect of high-entropy strategy in various catalytic reaction processes is summarized. Finally, the current progress of high-entropy materials, the problems encountered, and the future development direction are reviewed. It is emphasized that the strategy of high flux density functional theory calculation guiding high-entropy catalyst design will be of great significance to electrocatalysis.

Recent advances in the functionalization, substitutional doping and applications of graphene/graphene composite nanomaterials

Recently, graphene and graphene-based nanomaterials have emerged as advanced carbon functional materials with specialized unique electronic, optical, mechanical, and chemical properties. These properties have made graphene an exceptional material for a wide range of promising applications in biological and non-biological fields. The present review illustrates the structural modifications of pristine graphene resulting in a wide variety of derivatives. The significance of substitutional doping with alkali-metals, alkaline earth metals, and III-VII group elements apart from the transition metals of the periodic table is discussed. The paper reviews various chemical and physical preparation routes of graphene, its derivatives and graphene-based nanocomposites at room and elevated temperatures in various solvents. The difficulty in dispersing it in water and organic solvents make it essential to functionalize graphene and its derivatives. Recent trends and advances are discussed at length. Controlled reduction reactions in the presence of various dopants leading to nanocomposites along with suitable surfactants essential to enhance its potential applications in the semiconductor industry and biological fields are discussed in detail.

Chemical reactivity of graphene doped with 3d transition metals: nothing compares to a single vacancy

CONTEXT

Finding catalysts that do not rely on the use of expensive metals is one of the requirements to achieve sustainable production. The reactivity of graphene doped with 3d transition metals was studied. All dopants enhanced the reactivity of graphene and performed better than Stone-Wales defects and divacancies, but were inferior to monovacancies. For hydrogenation of doped-monovacancies, Sc, Ti, Cr, Co, and Ni induced more prominent reactivity on the carbon atoms. However, the metals were the most reactive center for V, Mn, and Fe-doped graphene. Cu and Zn turned the four neighboring carbon atoms into the preferred sites for hydrogenation. The addition of oxygen to doped graphene with Ti, V, Cr, Mn, Fe, Co, and Ni on a monovacancy revealed a more uniform pattern since the metal, preferred to react with oxygen. However, Sc induced a larger reactivity on the carbon atoms. The affinity of the 3d metal-doped graphene systems towards oxygen was inferior to that observed for single-vacancies. Therefore, vacancy engineering is the most favorable and least expensive method to enhance the reactivity of graphene.

METHODS

We applied Truhlar's M06-L method accompanied by the 6-31G* basis sets to perform periodic boundary conditions calculations as implemented in Gaussian 09. The ultrafine grid was employed and the unit cells were sampled employing 100 k-points. Results were visualized employing Gaussview 5.0.1.

Graphene-based biosensors for detecting coronavirus: a brief review

The coronavirus (SARS-CoV-2) disease has affected the globe with 770 437 327 confirmed cases, including about 6 956 900 deaths, according to the World Health Organization (WHO) as of September 2023. Hence, it is imperative to develop diagnostic technologies, such as a rapid cost-effective SARS-CoV-2 detection method. A typical biosensor enables biomolecule detection with an appropriate transducer by generating a measurable signal from the sample. Graphene can be employed as a component for ultrasensitive and selective biosensors based on its physical, optical, and electrochemical properties. Herein, we briefly review graphene-based electrochemical, field-effect transistor (FET), and surface plasmon biosensors for detecting the SARS-CoV-2 target. In addition, details on the surface modification, immobilization, sensitivity and limit of detection (LOD) of all three sensors with regard to SARS-CoV-2 were reported. Finally, the point-of-care (POC) detection of SARS-CoV-2 using a portable smartphone and a wearable watch is a current topic of interest.

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here, we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low-energy ion implants can be achieved by either lowering the column voltage or decelerating ions using bias while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found, which is due to lattice enrichment with high-stopping-power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way towards much lower implantation energies while maintaining high spatial resolution.

Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions

This paper explores the optical properties of an exfoliated MoSe₂ monolayer implanted with Cr⁺ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe₂ reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterized by nonzero activation energy, long lifetimes, and weak response to the magnetic field. To rationalize the experimental results and get insights into the atomic structure of the defects, we modeled the Cr-ion irradiation process using ab initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low-energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of two-dimensional (2D) materials by doping.

Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation

In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene samples. We used electrostatic masks to create a doped and non-doped region in one single implantation step. For verification we measured the surface potential profile along the sample and proved the feasibility of lateral controllable doping. In another experiment, a voltage gradient was applied across the graphene layer in order to implant helium at different energies and thus perform an ion-energy-dependent investigation of the implantation damage of the graphene. For this purpose Raman measurements were performed, which show the different damage due to the various ion energies. Finally, ion implantation simulations were conducted to evaluate damage formation.

Heteroatom Codoped Graphene: The Importance of Nitrogen

Although graphene has exceptional properties, they are not enough to solve the extensive list of pressing world problems. The substitutional doping of graphene using heteroatoms is one of the preferred methods to adjust the physicochemical properties of graphene. Much effort has been made to dope graphene using a single dopant. However, in recent years, substantial efforts have been made to dope graphene using two or more dopants. This review summarizes all the hard work done to synthesize, characterize, and develop new technologies using codoped, tridoped, and quaternary doped graphene. First, I discuss a simple question that has a complicated answer: When can an atom be considered a dopant? Then, I briefly discuss the single atom doped graphene as a starting point for this review's primary objective: codoped or dual-doped graphene. I extend the discussion to include tridoped and quaternary doped graphene. I review most of the systems that have been synthesized or studied theoretically and the areas in which they have been used to develop new technologies. Finally, I discuss the challenges and prospects that will shape the future of this fascinating field. It will be shown that most of the graphene systems that have been reported involve the use of nitrogen, and much effort is needed to develop codoped graphene systems that do not rely on the stabilizing effects of nitrogen. I expect that this review will contribute to introducing more researchers to this fascinating field and enlarge the list of codoped graphene systems that have been synthesized.

Beam-driven Dynamics of Aluminium Dopants in Graphene

Substituting heteroatoms into graphene can tune its properties for applications ranging from catalysis to spintronics. The further recent discovery that covalent impurities in graphene can be manipulated at atomic precision using a focused electron beam may open avenues towards sub-nanometer device architectures. However, the preparation of clean samples with a high density of dopants is still very challenging. Here, we report vacancy-mediated substitution of aluminium into laser-cleaned graphene, and without removal from our ultra-high vacuum apparatus, study their dynamics under 60 keV electron irradiation using aberration-corrected scanning transmission electron microscopy and spectroscopy. Three- and four-coordinated Al sites are identified, showing excellent agreement with ab initio predictions including binding energies and electron energy-loss spectrum simulations. We show that the direct exchange of carbon and aluminium atoms predicted earlier occurs under electron irradiation, although unexpectedly it is less probable than the same process for silicon. We also observe a previously unknown nitrogen-aluminium exchange that occurs at Al─N double-dopant sites at graphene divacancies created by our plasma treatment.

Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: The ASPIC and ASCII Vacuum Chambers

Solid-state physics research has long employed radioactive isotopes to investigate the crystallographic, electric and magnetic properties of nanostructures. Ion implantation (1–100 keV) is the method of choice for incorporating radioactive nuclei into the crystal structure. However, the enormous scientific interest in 2D materials, multiferroics and their interfaces of the last decades has lead to more stringent demands for isotope incorporation. Ultra-low energy (ULE) ion implantation (10–100 eV) provides the ability to precisely tune the depth of the implanted radioactive probes, even in the case of atomically thin 2D materials. To unlock this potential and expand the experimental capabilities of the ISOLDE collaboration in CERN, the apparatus for surface physics and interfaces at CERN (ASPIC), an experienced ultra-high vacuum chamber dedicated to surface characterization and modification, is refurbished and upgraded with a new component: the ASPIC’s ion implantation (ASCII) chamber, designed for ULE ion implantation of radioactive probes. This paper describes the scientific context, design and application of these vacuum chambers.

Threshold Ion Energies for Creating Defects in 2D Materials from First-Principles Calculations: Chemical Interactions Are Important

The characteristics of two-dimensional (2D) materials can be tuned by low-energy ion irradiation provided that the ion energy is correctly chosen. The optimum ion energy is related to E_th^ion, the minimum kinetic energy the ion should have to displace an atom from the material. E_th^ion can be assessed using the binary collision approximation (BCA) when the displacement threshold of the atom is known. However, for some ions the experimental data contradict the BCA results. Using density functional theory molecular dynamics (DFT-MD), we study the collisions of low-energy ions with graphene and hexagonal boron nitride and demonstrate that the BCA can strongly overestimate E_th^ion because energy transfer takes a finite time, and therefore, chemical interactions of the ion with the target are important. Finally, for all projectiles from H up to Ar, we calculate the values of E_th^ion required to displace an atom from graphene and h-BN, the archetypal 2D materials.

Thermoelectric properties of doped graphene nanoribbons: density functional theory calculations and electrical transport

We present a detailed study on band structure-dependent properties such as electrical conductivity, the charge of carriers and Seebeck coefficients of graphene nano-ribbons (GNRs) doped with the magnetic impurities Fe and Co since the spin thermopower could be considerably enhanced by impurities. Thermoelectric properties of two-dimensional systems are currently of great interest due to the possibility of heat to electrical energy conversion at the nanoscale. The thermoelectric properties are investigated using the semi-classical Boltzmann method. The electronic band structure of doped nano-ribbons is evaluated by means of density-functional theory in which the Hubbard interaction is considered. Different types of nano-ribbons (armchair-edge and zigzag-edge) and their thermoelectric features such as conductivity and Seebeck coefficient in the presence and absence of magnetic impurities have been studied.

We present a detailed study on band structure-dependent properties such as electrical conductivity, the charge of carriers and Seebeck coefficients of graphene nano-ribbons doped with atoms since the spin thermopower could be enhanced by impurities.