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Trentino A, Zagler G, Längle M, Madsen J, Susi T, Mangler C, Åhlgren EH, Mustonen K, Kotakoski J. Single atoms and metal nanoclusters anchored to graphene vacancies. Micron 2024; 184:103667. [PMID: 38850967 DOI: 10.1016/j.micron.2024.103667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 05/24/2024] [Accepted: 05/29/2024] [Indexed: 06/10/2024]
Abstract
Fabricating dispersed single atoms and size-controlled metal nanoclusters remains a difficult challenge due to sintering. Here, we demonstrate that atoms and clusters can be immobilized using atomically clean defect-engineered graphene as the matrix. The graphene is first cleaned of surface contamination with laser heating, after which low-energy Ar irradiation is used to create spatially well-separated vacancies into it. Metal atoms are then evaporated either via thermal or ebeam evaporation onto graphene, where they diffuse until being trapped into a vacancy. The density of embedded structures can be controlled through irradiation dose, and the size of the structures through evaporation time. The resulting structures are confirmed through atomic-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. We demonstrate here incorporation of Al, Ti, Fe, Ag and Au single atoms or nanoclusters, but the method should work equally well for other elements.
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Affiliation(s)
- Alberto Trentino
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria; University of Vienna, Vienna Doctoral School in Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - Georg Zagler
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria; University of Vienna, Vienna Doctoral School in Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - Manuel Längle
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria; University of Vienna, Vienna Doctoral School in Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - Jacob Madsen
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - Toma Susi
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - Clemens Mangler
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - E Harriet Åhlgren
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria; University of Helsinki, Department of Physics, P.O. Box 43, Helsinki FI-00014, Finland
| | - Kimmo Mustonen
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria
| | - Jani Kotakoski
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna 1090, Austria.
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2
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Villarreal R, Zarkua Z, Kretschmer S, Hendriks V, Hillen J, Tsai HC, Junge F, Nissen M, Saha T, Achilli S, Hofsäss HC, Martins M, De Ninno G, Lacovig P, Lizzit S, Di Santo G, Petaccia L, De Feyter S, De Gendt S, Brems S, Van de Vondel J, Krasheninnikov AV, Pereira LMC. Achieving High Substitutional Incorporation in Mn-Doped Graphene. ACS NANO 2024; 18:17815-17825. [PMID: 38938181 DOI: 10.1021/acsnano.4c03475] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Despite its broad potential applications, substitution of carbon by transition metal atoms in graphene has so far been explored only to a limited extent. We report the realization of substitutional Mn doping of graphene to a record high atomic concentration of 0.5%, which was achieved using ultralow-energy ion implantation. By correlating the experimental data with the results of ab initio Born-Oppenheimer molecular dynamics calculations, we infer that direct substitution is the dominant mechanism of impurity incorporation. Thermal annealing in ultrahigh vacuum provides efficient removal of surface contaminants and additional implantation-induced disorder, resulting in Mn-doped graphene that, aside from the substitutional Mn impurities, is essentially as clean and defect-free as the as-grown layer. We further show that the Dirac character of graphene is preserved upon substitutional Mn doping, even in this high concentration regime, making this system ideal for studying the interaction between Dirac conduction electrons and localized magnetic moments. More generally, these results show that ultralow energy ion implantation can be used for controlled functionalization of graphene with substitutional transition-metal atoms, of relevance for a wide range of applications, from magnetism and spintronics to single-atom catalysis.
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Affiliation(s)
| | - Zviadi Zarkua
- Quantum Solid State Physics, KU Leuven, Leuven 3001, Belgium
| | - Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Vince Hendriks
- Quantum Solid State Physics, KU Leuven, Leuven 3001, Belgium
| | - Jonas Hillen
- Quantum Solid State Physics, KU Leuven, Leuven 3001, Belgium
| | - Hung Chieh Tsai
- Imec Vzw (Interuniversitair Micro-Electronica Centrum), Leuven 3001, Belgium
- Department of Chemistry, Division of Molecular Design and Synthesis, KU Leuven, Leuven 3001, Belgium
| | - Felix Junge
- II. Institute of Physics, University of Göttingen, Göttingen 37077, Germany
| | - Matz Nissen
- Institut fur̈ Experimentalphysik, Universität Hamburg, Hamburg 22761, Germany
| | - Tanusree Saha
- Laboratory of Quantum Optics, University of Nova Gorica, Vipavska 11c, Ajdovščina SI-5270, Slovenia
| | - Simona Achilli
- ETSF and Dipartimento di Fisica "Aldo Pontremoli", Università Degli Studi di Milano, Via Celoria, 16, Milano I-20133, Italy
| | - Hans C Hofsäss
- II. Institute of Physics, University of Göttingen, Göttingen 37077, Germany
| | - Michael Martins
- Institut fur̈ Experimentalphysik, Universität Hamburg, Hamburg 22761, Germany
| | - Giovanni De Ninno
- Laboratory of Quantum Optics, University of Nova Gorica, Vipavska 11c, Ajdovščina SI-5270, Slovenia
| | - Paolo Lacovig
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy
| | - Silvano Lizzit
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy
| | - Giovanni Di Santo
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy
| | - Luca Petaccia
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy
| | - Steven De Feyter
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, Leuven 3001, Belgium
| | - Stefan De Gendt
- Imec Vzw (Interuniversitair Micro-Electronica Centrum), Leuven 3001, Belgium
- Department of Chemistry, Division of Molecular Design and Synthesis, KU Leuven, Leuven 3001, Belgium
| | - Steven Brems
- Imec Vzw (Interuniversitair Micro-Electronica Centrum), Leuven 3001, Belgium
| | | | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
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3
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Wu J, Wang H, Liu N, Jia B, Zheng J. High-Entropy Materials in Electrocatalysis: Understanding, Design, and Development. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403162. [PMID: 38934346 DOI: 10.1002/smll.202403162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2024] [Revised: 06/06/2024] [Indexed: 06/28/2024]
Abstract
Electrocatalysis is a crucial method for achieving global carbon neutrality, serving as an essential means of energy conversion, and electrocatalyst is crucial in the process of electrocatalysis. Because of the abundant active sites, the multi-component synergistic effect of high-entropy materials has a wide application prospect in the field of electrocatalysis. Moreover, due to the special structure of high-entropy materials, it is possible to obtain almost continuous adsorption energy distribution by regulating the composition, which has attracted extensive attention of researchers. This paper reviews the properties and types of high-entropy materials, including alloys and compounds. The synthesis strategies of high-entropy materials are systematically introduced, and the solid phase synthesis, liquid-phase synthesis, and gas-phase synthesis are classified and summarized. The application of high-entropy materials in electrocatalysis is summarized, and the promotion effect of high-entropy strategy in various catalytic reaction processes is summarized. Finally, the current progress of high-entropy materials, the problems encountered, and the future development direction are reviewed. It is emphasized that the strategy of high flux density functional theory calculation guiding high-entropy catalyst design will be of great significance to electrocatalysis.
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Affiliation(s)
- Jiwen Wu
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Huichao Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Naiyan Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
| | - Binbin Jia
- College of Materials and Chemical Engineering, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, China Three Gorges University, Yichang, 443002, China
| | - Jinlong Zheng
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, China
- Shunde Innovation School, University of Science and Technology Beijing, Foshan, 528399, China
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4
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Narayan J, Bezborah K. Recent advances in the functionalization, substitutional doping and applications of graphene/graphene composite nanomaterials. RSC Adv 2024; 14:13413-13444. [PMID: 38660531 PMCID: PMC11041312 DOI: 10.1039/d3ra07072g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 04/01/2024] [Indexed: 04/26/2024] Open
Abstract
Recently, graphene and graphene-based nanomaterials have emerged as advanced carbon functional materials with specialized unique electronic, optical, mechanical, and chemical properties. These properties have made graphene an exceptional material for a wide range of promising applications in biological and non-biological fields. The present review illustrates the structural modifications of pristine graphene resulting in a wide variety of derivatives. The significance of substitutional doping with alkali-metals, alkaline earth metals, and III-VII group elements apart from the transition metals of the periodic table is discussed. The paper reviews various chemical and physical preparation routes of graphene, its derivatives and graphene-based nanocomposites at room and elevated temperatures in various solvents. The difficulty in dispersing it in water and organic solvents make it essential to functionalize graphene and its derivatives. Recent trends and advances are discussed at length. Controlled reduction reactions in the presence of various dopants leading to nanocomposites along with suitable surfactants essential to enhance its potential applications in the semiconductor industry and biological fields are discussed in detail.
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Affiliation(s)
- Jyoti Narayan
- Synthetic Nanochemistry Laboratory, Department of Basic Sciences & Social Sciences, (Chemistry Division) School of Technology, North Eastern Hill University Shillong 793022 Meghalaya India
| | - Kangkana Bezborah
- Synthetic Nanochemistry Laboratory, Department of Basic Sciences & Social Sciences, (Chemistry Division) School of Technology, North Eastern Hill University Shillong 793022 Meghalaya India
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5
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Denis PA. Chemical reactivity of graphene doped with 3d transition metals: nothing compares to a single vacancy. J Mol Model 2024; 30:96. [PMID: 38446327 DOI: 10.1007/s00894-024-05893-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 02/29/2024] [Indexed: 03/07/2024]
Abstract
CONTEXT Finding catalysts that do not rely on the use of expensive metals is one of the requirements to achieve sustainable production. The reactivity of graphene doped with 3d transition metals was studied. All dopants enhanced the reactivity of graphene and performed better than Stone-Wales defects and divacancies, but were inferior to monovacancies. For hydrogenation of doped-monovacancies, Sc, Ti, Cr, Co, and Ni induced more prominent reactivity on the carbon atoms. However, the metals were the most reactive center for V, Mn, and Fe-doped graphene. Cu and Zn turned the four neighboring carbon atoms into the preferred sites for hydrogenation. The addition of oxygen to doped graphene with Ti, V, Cr, Mn, Fe, Co, and Ni on a monovacancy revealed a more uniform pattern since the metal, preferred to react with oxygen. However, Sc induced a larger reactivity on the carbon atoms. The affinity of the 3d metal-doped graphene systems towards oxygen was inferior to that observed for single-vacancies. Therefore, vacancy engineering is the most favorable and least expensive method to enhance the reactivity of graphene. METHODS We applied Truhlar's M06-L method accompanied by the 6-31G* basis sets to perform periodic boundary conditions calculations as implemented in Gaussian 09. The ultrafine grid was employed and the unit cells were sampled employing 100 k-points. Results were visualized employing Gaussview 5.0.1.
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Affiliation(s)
- Pablo A Denis
- Computational Nanotechnology, DETEMA, Facultad de Química, UDELAR, CC 1157, 11800, Montevideo, Uruguay.
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6
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Abrha FH, Wondimu TH, Kahsay MH, Fufa Bakare F, Andoshe DM, Kim JY. Graphene-based biosensors for detecting coronavirus: a brief review. NANOSCALE 2023; 15:18184-18197. [PMID: 37927083 DOI: 10.1039/d3nr04583h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
The coronavirus (SARS-CoV-2) disease has affected the globe with 770 437 327 confirmed cases, including about 6 956 900 deaths, according to the World Health Organization (WHO) as of September 2023. Hence, it is imperative to develop diagnostic technologies, such as a rapid cost-effective SARS-CoV-2 detection method. A typical biosensor enables biomolecule detection with an appropriate transducer by generating a measurable signal from the sample. Graphene can be employed as a component for ultrasensitive and selective biosensors based on its physical, optical, and electrochemical properties. Herein, we briefly review graphene-based electrochemical, field-effect transistor (FET), and surface plasmon biosensors for detecting the SARS-CoV-2 target. In addition, details on the surface modification, immobilization, sensitivity and limit of detection (LOD) of all three sensors with regard to SARS-CoV-2 were reported. Finally, the point-of-care (POC) detection of SARS-CoV-2 using a portable smartphone and a wearable watch is a current topic of interest.
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Affiliation(s)
- Filimon Hadish Abrha
- Department of Chemistry, College of Natural and Computational Sciences, Aksum University, Aksum 1010, Ethiopia
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia.
| | - Tadele Hunde Wondimu
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia.
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia
| | - Mebrahtu Hagos Kahsay
- Department of Applied Chemistry, College of Natural and Computational Sciences, Mekelle University, Mekelle 231, Ethiopia
- Department of Applied Chemistry, Adama Science and Technology University, Adama 1888, Ethiopia
| | - Fetene Fufa Bakare
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia.
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia
| | - Dinsefa Mensur Andoshe
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia.
| | - Jung Yong Kim
- Department of Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia.
- Center of Advanced Materials Science and Engineering, Adama Science and Technology University, Adama 1888, Ethiopia
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7
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Titze M, Poplawsky JD, Kretschmer S, Krasheninnikov AV, Doyle BL, Bielejec ES, Hobler G, Belianinov A. Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics. MICROMACHINES 2023; 14:1884. [PMID: 37893321 PMCID: PMC10609604 DOI: 10.3390/mi14101884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 09/26/2023] [Accepted: 09/28/2023] [Indexed: 10/29/2023]
Abstract
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here, we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low-energy ion implants can be achieved by either lowering the column voltage or decelerating ions using bias while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found, which is due to lattice enrichment with high-stopping-power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way towards much lower implantation energies while maintaining high spatial resolution.
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Affiliation(s)
- Michael Titze
- Ion Beam Laboratory, Sandia National Laboratories, Albuquerque, NM 87185, USA
| | - Jonathan D. Poplawsky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Arkady V. Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Barney L. Doyle
- Ion Beam Laboratory, Sandia National Laboratories, Albuquerque, NM 87185, USA
| | - Edward S. Bielejec
- Ion Beam Laboratory, Sandia National Laboratories, Albuquerque, NM 87185, USA
| | - Gerhard Hobler
- Institute of Solid-State Electronics, TU Wien, Gußhausstraße 25-25a, A-1040 Wien, Austria
| | - Alex Belianinov
- Ion Beam Laboratory, Sandia National Laboratories, Albuquerque, NM 87185, USA
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8
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Bui MN, Rost S, Auge M, Zhou L, Friedrich C, Blügel S, Kretschmer S, Krasheninnikov AV, Watanabe K, Taniguchi T, Hofsäss HC, Grützmacher D, Kardynał BE. Optical Properties of MoSe 2 Monolayer Implanted with Ultra-Low-Energy Cr Ions. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37432886 PMCID: PMC10375475 DOI: 10.1021/acsami.3c05366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
This paper explores the optical properties of an exfoliated MoSe2 monolayer implanted with Cr+ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe2 reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterized by nonzero activation energy, long lifetimes, and weak response to the magnetic field. To rationalize the experimental results and get insights into the atomic structure of the defects, we modeled the Cr-ion irradiation process using ab initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low-energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of two-dimensional (2D) materials by doping.
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Affiliation(s)
- Minh N Bui
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | - Stefan Rost
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
- Peter Grünberg Institute 1 (PGI-1) and Institute for Advanced Simulation 1 (IAS-1), Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - Manuel Auge
- II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Lanqing Zhou
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
| | | | - Stefan Blügel
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
- II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Hans C Hofsäss
- II. Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Detlev Grützmacher
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Beata E Kardynał
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52074 Aachen, Germany
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9
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Junge F, Auge M, Zarkua Z, Hofsäss H. Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:658. [PMID: 36839025 PMCID: PMC9964514 DOI: 10.3390/nano13040658] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/02/2023] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene samples. We used electrostatic masks to create a doped and non-doped region in one single implantation step. For verification we measured the surface potential profile along the sample and proved the feasibility of lateral controllable doping. In another experiment, a voltage gradient was applied across the graphene layer in order to implant helium at different energies and thus perform an ion-energy-dependent investigation of the implantation damage of the graphene. For this purpose Raman measurements were performed, which show the different damage due to the various ion energies. Finally, ion implantation simulations were conducted to evaluate damage formation.
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Affiliation(s)
- Felix Junge
- II. Institute of Physics, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Manuel Auge
- II. Institute of Physics, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Zviadi Zarkua
- Quantum Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | - Hans Hofsäss
- II. Institute of Physics, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
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10
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Denis PA. Heteroatom Codoped Graphene: The Importance of Nitrogen. ACS OMEGA 2022; 7:45935-45961. [PMID: 36570263 PMCID: PMC9773818 DOI: 10.1021/acsomega.2c06010] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2022] [Accepted: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Although graphene has exceptional properties, they are not enough to solve the extensive list of pressing world problems. The substitutional doping of graphene using heteroatoms is one of the preferred methods to adjust the physicochemical properties of graphene. Much effort has been made to dope graphene using a single dopant. However, in recent years, substantial efforts have been made to dope graphene using two or more dopants. This review summarizes all the hard work done to synthesize, characterize, and develop new technologies using codoped, tridoped, and quaternary doped graphene. First, I discuss a simple question that has a complicated answer: When can an atom be considered a dopant? Then, I briefly discuss the single atom doped graphene as a starting point for this review's primary objective: codoped or dual-doped graphene. I extend the discussion to include tridoped and quaternary doped graphene. I review most of the systems that have been synthesized or studied theoretically and the areas in which they have been used to develop new technologies. Finally, I discuss the challenges and prospects that will shape the future of this fascinating field. It will be shown that most of the graphene systems that have been reported involve the use of nitrogen, and much effort is needed to develop codoped graphene systems that do not rely on the stabilizing effects of nitrogen. I expect that this review will contribute to introducing more researchers to this fascinating field and enlarge the list of codoped graphene systems that have been synthesized.
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11
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Zagler G, Stecher M, Trentino A, Kraft F, Su C, Postl A, Längle M, Pesenhofer C, Mangler C, Åhlgren EH, Markevich A, Zettl A, Kotakoski J, Susi T, Mustonen K. Beam-driven Dynamics of Aluminium Dopants in Graphene. 2D MATERIALS 2022; 9:035009. [PMID: 35694040 PMCID: PMC9186522 DOI: 10.1088/2053-1583/ac6c30] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Substituting heteroatoms into graphene can tune its properties for applications ranging from catalysis to spintronics. The further recent discovery that covalent impurities in graphene can be manipulated at atomic precision using a focused electron beam may open avenues towards sub-nanometer device architectures. However, the preparation of clean samples with a high density of dopants is still very challenging. Here, we report vacancy-mediated substitution of aluminium into laser-cleaned graphene, and without removal from our ultra-high vacuum apparatus, study their dynamics under 60 keV electron irradiation using aberration-corrected scanning transmission electron microscopy and spectroscopy. Three- and four-coordinated Al sites are identified, showing excellent agreement with ab initio predictions including binding energies and electron energy-loss spectrum simulations. We show that the direct exchange of carbon and aluminium atoms predicted earlier occurs under electron irradiation, although unexpectedly it is less probable than the same process for silicon. We also observe a previously unknown nitrogen-aluminium exchange that occurs at Al─N double-dopant sites at graphene divacancies created by our plasma treatment.
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Affiliation(s)
- Georg Zagler
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Maximilian Stecher
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Alberto Trentino
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Fabian Kraft
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Cong Su
- Department of Physics, University of California, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA 94720, USA
| | - Andreas Postl
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Manuel Längle
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | | | - Clemens Mangler
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - E. Harriet Åhlgren
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | | | - Alex Zettl
- Department of Physics, University of California, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA 94720, USA
| | - Jani Kotakoski
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Toma Susi
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
| | - Kimmo Mustonen
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, 1090, Austria
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12
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Urchin like inverse spinel manganese doped NiCo2O4 microspheres as high performances anode for lithium-ion batteries. J Colloid Interface Sci 2022; 616:509-519. [DOI: 10.1016/j.jcis.2022.02.069] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/19/2021] [Revised: 02/16/2022] [Accepted: 02/17/2022] [Indexed: 11/17/2022]
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13
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Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: The ASPIC and ASCII Vacuum Chambers. CRYSTALS 2022. [DOI: 10.3390/cryst12050626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
Solid-state physics research has long employed radioactive isotopes to investigate the crystallographic, electric and magnetic properties of nanostructures. Ion implantation (1–100 keV) is the method of choice for incorporating radioactive nuclei into the crystal structure. However, the enormous scientific interest in 2D materials, multiferroics and their interfaces of the last decades has lead to more stringent demands for isotope incorporation. Ultra-low energy (ULE) ion implantation (10–100 eV) provides the ability to precisely tune the depth of the implanted radioactive probes, even in the case of atomically thin 2D materials. To unlock this potential and expand the experimental capabilities of the ISOLDE collaboration in CERN, the apparatus for surface physics and interfaces at CERN (ASPIC), an experienced ultra-high vacuum chamber dedicated to surface characterization and modification, is refurbished and upgraded with a new component: the ASPIC’s ion implantation (ASCII) chamber, designed for ULE ion implantation of radioactive probes. This paper describes the scientific context, design and application of these vacuum chambers.
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14
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Kretschmer S, Ghaderzadeh S, Facsko S, Krasheninnikov AV. Threshold Ion Energies for Creating Defects in 2D Materials from First-Principles Calculations: Chemical Interactions Are Important. J Phys Chem Lett 2022; 13:514-519. [PMID: 35005978 DOI: 10.1021/acs.jpclett.1c03995] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The characteristics of two-dimensional (2D) materials can be tuned by low-energy ion irradiation provided that the ion energy is correctly chosen. The optimum ion energy is related to Ethion, the minimum kinetic energy the ion should have to displace an atom from the material. Ethion can be assessed using the binary collision approximation (BCA) when the displacement threshold of the atom is known. However, for some ions the experimental data contradict the BCA results. Using density functional theory molecular dynamics (DFT-MD), we study the collisions of low-energy ions with graphene and hexagonal boron nitride and demonstrate that the BCA can strongly overestimate Ethion because energy transfer takes a finite time, and therefore, chemical interactions of the ion with the target are important. Finally, for all projectiles from H up to Ar, we calculate the values of Ethion required to displace an atom from graphene and h-BN, the archetypal 2D materials.
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Affiliation(s)
- Silvan Kretschmer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Sadegh Ghaderzadeh
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Stefan Facsko
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University, 00076 Aalto, Finland
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15
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Rahmati E, Bafekry A, Faraji M, Gogva D, Nguyen CV, Ghergherehchi M. Thermoelectric properties of doped graphene nanoribbons: density functional theory calculations and electrical transport. RSC Adv 2022; 12:6174-6180. [PMID: 35424535 PMCID: PMC8981560 DOI: 10.1039/d1ra08303a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Accepted: 02/12/2022] [Indexed: 01/07/2023] Open
Abstract
We present a detailed study on band structure-dependent properties such as electrical conductivity, the charge of carriers and Seebeck coefficients of graphene nano-ribbons (GNRs) doped with the magnetic impurities Fe and Co since the spin thermopower could be considerably enhanced by impurities. Thermoelectric properties of two-dimensional systems are currently of great interest due to the possibility of heat to electrical energy conversion at the nanoscale. The thermoelectric properties are investigated using the semi-classical Boltzmann method. The electronic band structure of doped nano-ribbons is evaluated by means of density-functional theory in which the Hubbard interaction is considered. Different types of nano-ribbons (armchair-edge and zigzag-edge) and their thermoelectric features such as conductivity and Seebeck coefficient in the presence and absence of magnetic impurities have been studied. We present a detailed study on band structure-dependent properties such as electrical conductivity, the charge of carriers and Seebeck coefficients of graphene nano-ribbons doped with atoms since the spin thermopower could be enhanced by impurities.![]()
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Affiliation(s)
- E. Rahmati
- School of Physics, University of Damghan, P.O. Box 36716-41167, Damghan, Iran
| | - A. Bafekry
- Department of Physics, University of Guilan, Rasht 41335-1914, Iran
- Department of Physics, Rasht Branch, Islamic Azad University, Rasht, Iran
| | - M. Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No. 43 Sogutozu, 06560, Ankara, Turkey
| | - D. Gogva
- Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linkoping, Sweden
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi, Vietnam
| | - M. Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea
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