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Cheng WN, Niu M, Meng Y, Han X, Qiao J, Zhang J, Zhao X. Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide. NANO LETTERS 2024; 24:6441-6449. [PMID: 38757836 DOI: 10.1021/acs.nanolett.4c01771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
In the realm of condensed matter physics and materials science, charge density waves (CDWs) have emerged as a captivating way to modulate correlated electronic phases and electron oscillations in quantum materials. However, collectively and efficiently tuning CDW order is a formidable challenge. Herein, we introduced a novel way to modulate the CDW order in 1T-TaS2 via stacking engineering. By introducing shear strain during the electrochemical exfoliation, the thermodynamically stable AA-stacked TaS2 consecutively transform into metastable ABC stacking, resulting in unique 3a × 1a CDW order. By decoupling atom coordinates, we atomically deciphered the 3D subtle structural variations in trilayer samples. As suggested by density functional theory (DFT) calculations, the origin of CDWs is presumably due to collective excitations and charge modulation. Therefore, our works shed light on a new avenue to collectively modulate the CDW order via stackingtronics and unveiled novel mechanisms for triggering CDW formation via charge modulation.
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Affiliation(s)
- Wing Ni Cheng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Niu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Meng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jingsi Qiao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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2
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Mohanty S, Deb P. Sign-flipping intrinsic anomalous Hall conductivity with Berry curvature tunability in a half-metallic ferromagnet NbSe 2-VSe 2 lateral heterostructure. NANOSCALE 2024. [PMID: 38618922 DOI: 10.1039/d3nr06266j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Single-layer half-metal magnets offer exciting scope in spin electronic quantum applications owing to improved spin transport, reduced interfacial resistance and streamlined device fabrication. Herein, we report the emergence of sign-flipping intrinsic anomalous Hall conductivity (AHC) as a result of changes in Berry curvature under an external electric field and half metallicity in a lateral heterostructure composed of centrosymmetric metallic monolayers 1T-NbSe2 and 1T-VSe2. The metallic monolayers 1T-NbSe2 and 1T-VSe2 laterally interfaced along the zigzag orientation break inversion symmetry at the interface and result in distinctive Berry curvature features. Furthermore, the half-metallic character was prominent with gapped states in the spin-up channel, while the spin-down state remained conductive; we observed the unique manifestation of sign-flipping intrinsic AHC at the Fermi level in addition to the electron- and hole-doped regions. This sign-flipping aspect of AHC at the Fermi level is of fundamental importance from the prospect of real-time device applications as it eliminates the necessity of supplementary actions, such as doping and strain engineering, which are traditionally employed to achieve AHC sign reversal. Additionally, a phase transition from half metal to metal occurs at a field of 0.5 V Å-1 and beyond. Half metallicity with sign switching AHC via external electric field makes the lateral NbSe2-VSe2 heterostructure a potential candidate for real-time energy-efficient low-power spintronic devices.
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Affiliation(s)
- Saransha Mohanty
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
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3
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Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
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Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
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4
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Li G, Feng Y, Li L, Du W, Liu H, Sun X, Zhao X, Ma Y, Jia Y, Chen F. Broadband nonlinear optical response and sub-picosecond carrier dynamics in graphene-SnSe 2 van der Waals heterostructures. OPTICS EXPRESS 2024; 32:2867-2883. [PMID: 38297805 DOI: 10.1364/oe.515354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 12/29/2023] [Indexed: 02/02/2024]
Abstract
The van der Waals (vdWs) heterostructures, with vertical layer stacking structure of various two-dimensional (2D) materials, maintain the reliable photonic characteristics while compensating the shortcomings of the participating individual components. In this work, we combine the less-studied multilayer tin selenide (SnSe2) thin film with one of the traditional 2D materials, graphene, to fabricate the graphene-based vdWs optical switching element (Gr-SnSe2) with superior broadband nonlinear optical response. The transient absorption spectroscopy (TAS) measurement results verify that graphene acts as the recombination channel for the photogenerated carrier in the Gr-SnSe2 sample, and the fast recovery time can be reduced to hundreds of femtoseconds which is beneficial for the optical modulation process. The optical switching properties are characterized by the I-scan measurements, exhibiting a saturable energy intensity of 2.82 mJ·cm-2 (0.425 µJ·cm-2) and a modulation depth of 15.6% (22.5%) at the wavelength of 1030 nm (1980nm). Through integrating Gr-SnSe2 with a cladding waveguide, high-performance picosecond Q-switched operation in the near-infrared (NIR) and mid-infrared (MIR) spectral regions are both achieved. This work experimentally demonstrates the great potential of graphene-based vdWs heterostructures for applications in broadband ultrafast photonics.
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5
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Yang R, Fan Y, Hu J, Chen Z, Shin HS, Voiry D, Wang Q, Lu Q, Yu JC, Zeng Z. Photocatalysis with atomically thin sheets. Chem Soc Rev 2023; 52:7687-7706. [PMID: 37877319 DOI: 10.1039/d2cs00205a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Atomically thin sheets (e.g., graphene and monolayer molybdenum disulfide) are ideal optical and reaction platforms. They provide opportunities for deciphering some important and often elusive photocatalytic phenomena related to electronic band structures and photo-charges. In parallel, in such thin sheets, fine tuning of photocatalytic properties can be achieved. These include atomic-level regulation of electronic band structures and atomic-level steering of charge separation and transfer. Herein, we review the physics and chemistry of electronic band structures and photo-charges, as well as their state-of-the-art characterization techniques, before delving into their atomic-level deciphering and mastery on the platform of atomically thin sheets.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering, and State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China.
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada.
| | - Yingying Fan
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada.
| | - Jinguang Hu
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada.
| | - Zhangxin Chen
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada.
- Eastern Institute for Advanced Study, Ningbo, China
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 612022, South Korea
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR 5635, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Qian Wang
- Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
- Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan
| | - Qingye Lu
- Department of Chemical and Petroleum Engineering, University of Calgary, 2500 University Drive, NW, Calgary, Alberta, T2N 1N4, Canada.
| | - Jimmy C Yu
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering, and State Key Laboratory of Marine Pollution, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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6
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Chen Q, Yang K, Liang M, Kang J, Yi X, Wang J, Li J, Liu Z. Lattice modulation strategies for 2D material assisted epitaxial growth. NANO CONVERGENCE 2023; 10:39. [PMID: 37626161 PMCID: PMC10457265 DOI: 10.1186/s40580-023-00388-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method.
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Affiliation(s)
- Qi Chen
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kailai Yang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Kang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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7
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Chen X, Kislyakov IM, Wang T, Xie Y, Wang Y, Zhang L, Wang J. Photoacoustic 2D actuator via femtosecond pulsed laser action on van der Waals interfaces. Nat Commun 2023; 14:2135. [PMID: 37059706 PMCID: PMC10104871 DOI: 10.1038/s41467-023-37763-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Accepted: 03/30/2023] [Indexed: 04/16/2023] Open
Abstract
Achieving optically controlled nanomachine engineering can satisfy the touch-free and non-invasive demands of optoelectronics, nanotechnology, and biology. Traditional optical manipulations are mainly based on optical and photophoresis forces, and they usually drive particles in gas or liquid environments. However, the development of an optical drive in a non-fluidic environment, such as on a strong van der Waals interface, remains difficult. Herein, we describe an efficient 2D nanosheet actuator directed by an orthogonal femtosecond laser, where 2D VSe2 and TiSe2 nanosheets deposited on sapphire substrates can overcome the interface van der Waals forces (tens and hundreds of megapascals of surface density) and move on the horizontal surfaces. We attribute the observed optical actuation to the momentum generated by the laser-induced asymmetric thermal stress and surface acoustic waves inside the nanosheets. 2D semimetals with high absorption coefficient can enrich the family of materials suitable to implement optically controlled nanomachines on flat surfaces.
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Affiliation(s)
- Xin Chen
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ivan M Kislyakov
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.
| | - Tiejun Wang
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Yafeng Xie
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan Wang
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Long Zhang
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center for Excellence in Ultra-intense Laser Science, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Jun Wang
- Photonic Integrated Circuits Center, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.
- Center for Excellence in Ultra-intense Laser Science, Chinese Academy of Sciences, Shanghai, 201800, China.
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8
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Wu C, Zhao Y, Zhang G, Liu C. Giant thermal switching in ferromagnetic VSe 2 with programmable switching temperature. NANOSCALE HORIZONS 2023; 8:202-210. [PMID: 36484168 DOI: 10.1039/d2nh00429a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Active and reversible modulation of thermal conductivity can realize efficient heat energy management in many applications such as thermoelectrics. Using first-principles calculations, this study reports a giant thermal switching ratio of 12, much higher than previously reported values, in monolayer 2H-VSe2 above room temperature. Detailed analysis indicates that the high thermal switching ratio is dominated by the ferromagnetic ordering induced phonon bandgap, which significantly suppresses the phonon-phonon scattering phase space across the entire vibration spectrum. The thermal switching in bulk 2H-VSe2 is also investigated and the thermal switching ratio reaches 9.2 at the magnetic transition temperature. Both the phonon-phonon scattering space phase and phonon anharmonicity are responsible for the 9.2-fold thermal switching. This study advances the understanding of heat energy transport in two-dimensional ferromagnets, and also provides new insight into heat energy control and conversion.
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Affiliation(s)
- Chao Wu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China.
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211100, P. R. China
| | - Yunshan Zhao
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Gang Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore.
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China.
- Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, Nanjing Normal University, Nanjing, 210023, P. R. China
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9
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Jia PZ, Xie JP, Chen XK, Zhang Y, Yu X, Zeng YJ, Xie ZX, Deng YX, Zhou WX. Recent progress of two-dimensional heterostructures for thermoelectric applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:073001. [PMID: 36541472 DOI: 10.1088/1361-648x/aca8e4] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Accepted: 12/05/2022] [Indexed: 06/17/2023]
Abstract
The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.
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Affiliation(s)
- Pin-Zhen Jia
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Jia-Ping Xie
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Xue-Kun Chen
- School of Mathematics and Physics, University of South China, Hengyang 421001, People's Republic of China
| | - Yong Zhang
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Xia Yu
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Yu-Jia Zeng
- School of Materials Science and Engineering and Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Zhong-Xiang Xie
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Yuan-Xiang Deng
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Wu-Xing Zhou
- School of Materials Science and Engineering and Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
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10
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Ding J, Fu S, Hu K, Zhang G, Liu M, Zhang X, Wang R, Qiu X. Efficient Hot Electron Capture in CuPc/MoSe 2 Heterostructure Assisted by Intersystem Crossing. NANO LETTERS 2022; 22:8463-8469. [PMID: 36301844 DOI: 10.1021/acs.nanolett.2c02748] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Efficient hot electron extraction is a promising approach to develop photovoltaic devices that exceed the Shockley-Queisser limit. However, experimental evidence of hot electron harvesting employing an organic-inorganic interface is still elusive. Here, we reveal the hot electron dynamics at a CuPc/MoSe2 interface using steady-state spectroscopy and transient absorption spectroscopy. A hot electron transfer efficiency of greater than 78% from MoSe2 to CuPc is observed, comparable to that achieved in quantum dot hybrid systems. The mechanism is proposed as follows: the photogenerated hot electrons in MoSe2 transfer to CuPc and form singlet charge transfer states, which subsequently transform into triplet charge transfer states assisted by the rapid intersystem crossing, inhibiting back-donation of electrons and facilitating exciton dissociation into CuPc polarons with a nanosecond lifetime. Our results demonstrate that the intersystem crossing of the hybrid electronic state at organic-inorganic interfaces may serve as a scheme to enable efficient hot electron extraction in photovoltaic devices.
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Affiliation(s)
- Jianwei Ding
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shaohua Fu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, People's Republic of China
| | - Kui Hu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Mengxi Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, People's Republic of China
| | - Rui Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xiaohui Qiu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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11
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Zhang J, Li J, Huang H, Chen W, Cui Y, Li Y, Mao W, Zhu X, Li X. Spatial Relation Controllable Di-Defects Synergy Boosts Electrocatalytic Hydrogen Evolution Reaction over VSe 2 Nanoflakes in All pH Electrolytes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204557. [PMID: 36216775 DOI: 10.1002/smll.202204557] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/23/2022] [Indexed: 06/16/2023]
Abstract
Defect engineering of transition metal dichalcogenides (TMDCs) is important for improving electrocatalytic hydrogen evolution reaction (HER) performance. Herein, a facile and scalable atomic-level di-defect strategy over thermodynamically stable VSe2 nanoflakes, yielding attractive improvements in the electrocatalytic HER performance over a wide electrolyte pH range is reported. The di-defect configuration with controllable spatial relation between single-atom (SA) V defects and single Se vacancy defects effectively triggers the electrocatalytic HER activity of the inert VSe2 basal plane. When employed as a cathode, this di-defects decorated VSe2 electrocatalyst requires overpotentials of 67.2, 72.3, and 122.3 mV to reach a HER current density of 10 mA cm-2 under acidic, alkaline, and neutral conditions, respectively, which are superior to most previously reported non-noble metal HER electrocatalysts. Theoretical calculations reveal that the reactive microenvironment consists of two adjacent SA Mo atoms with two surrounding symmetric Se vacancies, yielding optimal water dissociation and hydrogen desorption kinetics. This study provides a scalable strategy for improving the electrocatalytic activity of other TMDCs with inert atoms in the basal plane.
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Affiliation(s)
- Jian Zhang
- New Energy Technology Engineering Lab of Jiangsu Province, College of Science, Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing, Jiangsu, 210023, P. R. China
| | - Jiandong Li
- College of Electronic and Optical Engineering & College of Flexible Electronics, Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, P. R. China
| | - Huajie Huang
- College of Mechanics and Materials, Hohai University, Nanjing, 210098, P. R. China
| | - Wei Chen
- School of Pharmaceutical and Materials Engineering, Taizhou University, Taizhou, Zhejiang Province, 318000, P. R. China
| | - Yan Cui
- Key Laboratory of Broadband Wireless Communication and Sensor Network Technology, Ministry of Education, Nanjing University of Posts and Telecommunications, Nanjing, 210003, P. R. China
| | - Yonghua Li
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing, Jiangsu, 210023, P. R. China
| | - Weiwei Mao
- New Energy Technology Engineering Lab of Jiangsu Province, College of Science, Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Xinbao Zhu
- College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, P. R. China
| | - Xing'ao Li
- New Energy Technology Engineering Lab of Jiangsu Province, College of Science, Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing, Jiangsu, 210023, P. R. China
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12
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Zhao R, Zhu Y, Zhou J, Liu B, Du Y, Gai S, Shen R, Feng L, Yang P. Dual Glutathione Depletion Enhanced Enzyme Catalytic Activity for Hyperthermia Assisted Tumor Therapy on Semi-Metallic VSe 2/Mn-CS. ACS NANO 2022; 16:10904-10917. [PMID: 35797013 DOI: 10.1021/acsnano.2c03222] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Semimetallic nanomaterials as photothermal agents for bioimaging and cancer therapy have attracted tremendous interest. However, the poor photothermal stability, low biocompatibility, and single component limit their therapeutic efficiency in cancer treatment. Here, manganese-doped VSe2 semimetallic nanosheets were prepared and subsequently modified with chitosan (named VSe2/Mn-CS NSs) for combined enzyme catalytic and photothermal therapy. VSe2/Mn-CS NSs show high photothermal property with a photothermal conversion efficiency of 34.61% upon 808 nm near-infrared laser irradiation. In the tumor microenvironment, VSe2/Mn-CS NSs can convert endogenous H2O2 into lethal hydroxyl radicals (•OH) to induce cancer cell apoptosis. The interaction between glutathione (GSH) and Se-Se bonds in VSe2/Mn-CS NSs results in the depletion of GSH level, and the valence states transition of manganese ions is also beneficial for the GSH consumption. This dual depletion of GSH markedly enhances the peroxidase (POD) activity, leading to the high •OH production and the improved therapeutic effect. What is more, the T1-weighted magnetic resonance and photoacoustic imaging endow VSe2/Mn-CS NSs with the ability to guide and track the treatment process. Our study provides a research strategy for the application of semimetallic nanomaterials in cancer diagnosis and treatment.
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Affiliation(s)
- Ruoxi Zhao
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Yanlin Zhu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Jialing Zhou
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Bin Liu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Yaqian Du
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Shili Gai
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
- Yantai Research Institute, Harbin Engineering University, Yantai, 264000, P. R. China
| | - Ruifang Shen
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Lili Feng
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Piaoping Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
- Yantai Research Institute, Harbin Engineering University, Yantai, 264000, P. R. China
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13
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Observation of pressure induced charge density wave order and eightfold structure in bulk VSe 2. Sci Rep 2021; 11:18157. [PMID: 34518573 PMCID: PMC8437963 DOI: 10.1038/s41598-021-97630-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Accepted: 08/19/2021] [Indexed: 11/30/2022] Open
Abstract
Pressure-induced charge density wave (CDW) state can overcome the low-temperature limitation for practical application, thus seeking its traces in experiments is of great importance. Herein, we provide spectroscopic evidence for the emergence of room temperature CDW order in the narrow pressure range of 10–15 GPa in bulk VSe2. Moreover, we discovered an 8-coordination structure of VSe2 with C2/m symmetry in the pressure range of 35–65 GPa by combining the X-ray absorption spectroscopy, X-ray diffraction experiments, and the first-principles calculations. These findings are beneficial for furthering our understanding of the charge modulated structure and its behavior under high pressure.
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