Heterogeneously Integrated Graphene/Silicon/Halide Waveguide Photodetectors toward Chip-Scale Zero-Bias Long-Wave Infrared Spectroscopic Sensing

Inverse design of mid-infrared diamond waveguide beam splitter

Diamond is a supreme material for mid-infrared (MIR) integrated photonics as it has a transparency window up to 20 µm that covers the entire fingerprint region. However, its relatively low refractive index poses a challenge in designing an MIR diamond functional device with both small footprint and high transmission efficiency. Here we propose and demonstrate the inverse design of an MIR diamond waveguide beam splitter operating at the wavelength of 15 µm with a small footprint of ∼15 µm × ∼15 µm and a total transmission efficiency above 95%. Our work paves a new avenue for the design of compact and high-efficiency MIR diamond photonic devices.

Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe2/ZnIn2S4 Alloy Heterojunctions

Various semiconductor devices have been developed based on 2D heterojunction materials owing to their distinctive optoelectronic properties. However, to achieve efficient charge transfer at their interface remains a major challenge. Herein, an alloy heterojunction concept is proposed. The sulfur vacancies in ZnIn2S4 are filled with selenium atoms of PdSe2. This chemically bonded heterojunction can significantly enhance the separation of photocarriers, providing notable advantages in the field of photoelectric conversion. As a demonstration, a two-terminal photodetector based on the PdSe2/ZnIn2S4 heterojunction materials is fabricated. The photodetector exhibits stable operation in ambient conditions, showcasing superior performance in terms of large photocurrent, high responsivity (48.8 mA W-1) and detectivity (1.98 × 1011 Jones). To further validate the excellent optoelectronic performance of the heterojunction, a tri-terminal phototransistor is also fabricated. Benefiting from gate voltage modulation, the photocurrent is amplified to milliampere level, and the responsivity is increased to 229.14 mA W-1. These findings collectively demonstrate the significant potential of the chemically bonded PdSe2/ZnIn2S4 alloy heterojunction for future optoelectronic applications.

Artificial Intelligence-Enhanced Waveguide "Photonic Nose"- Augmented Sensing Platform for VOC Gases in Mid-Infrared

On-chip nanophotonic waveguide sensor is a promising solution for miniaturization and label-free detection of gas mixtures utilizing the absorption fingerprints in the mid-infrared (MIR) region. However, the quantitative detection and analysis of organic gas mixtures is still challenging and less reported due to the overlapping of the absorption spectrum. Here,an Artificial-Intelligence (AI) assisted waveguide "Photonic nose" is presented as an augmented sensing platform for gas mixture analysis in MIR. With the subwavelength grating cladding supported waveguide design and the help of machine learning algorithms, the MIR absorption spectrum of the binary organic gas mixture is distinguished from arbitrary mixing ratio and decomposed to the single-component spectra for concentration prediction. As a result, the classification of 93.57% for 19 mixing ratios is realized. In addition, the gas mixture spectrum decomposition and concentration prediction show an average root-mean-square error of 2.44 vol%. The work proves the potential for broader sensing and analytical capabilities of the MIR waveguide platform for multiple organic gas components toward MIR on-chip spectroscopy.

Two-dimensional molybdenum ditelluride waveguide-integrated near-infrared photodetector

Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe2) from ∼0.83 to ∼1.1 eV makes it one of the ideal candidates for near-infrared (NIR) photodetectors. Herein, we demonstrate an excellent waveguide-integrated NIR photodetector by transferring mechanically exfoliated 2D MoTe2onto a silicon nitride (Si3N4) waveguide. The photoconductive photodetector exhibits excellent responsivity (R), detectivity (D*), and external quantum efficiency at 1550 nm and 50 mV, which are 41.9 A W-1, 16.2 × 1010Jones, and 3360%, respectively. These optoelectronic performances are 10.2 times higher than those of the free-space device, revealing that the photoresponse of photodetectors can be enhanced due to the presence of waveguide. Moreover, the photodetector also exhibits competitive performances over a broad wavelength range from 800 to 1000 nm with a highRof 15.4 A W-1and a largeD* of 59.6 × 109Jones. Overall, these results provide an alternative and prospective strategy for high-performance on-chip broadband NIR photodetectors.

Photodetectors integrating waveguides and semiconductor materials

Photodetectors integrating substrates and semiconductor materials are increasingly attractive for applications in optical communication, optical sensing, optical computing, and military owing to the unique optoelectronic properties of semiconductor materials. However, it is still a challenge to realize high-performance photodetectors by only integrating substrates and semiconductor materials because of the limitation of incident light in contact with sensitive materials. In recent years, waveguides such as silicon (Si) and silicon nitride (Si3N4) have attracted extensive attention owing to their unique optical properties. Waveguides can be easily hetero-integrated with semiconductor materials, thus providing a promising approach for realizing high-performance photodetectors. Herein, we review recent advances in photodetectors integrating waveguides in two parts. The first involves the waveguide types and semiconductor materials commonly used to fabricate photodetectors, including Si, Si3N4, gallium nitride, organic waveguides, graphene, and MoTe2. The second involves the photodetectors of different wavelengths that integrate waveguides, ranging from ultraviolet to infrared. These hybrid photodetectors integrating waveguides and semiconductor materials provide an alternative way to realize multifunctional and high-performance photonic integrated chips and circuits.

Research Progress in Surface-Enhanced Infrared Absorption Spectroscopy: From Performance Optimization, Sensing Applications, to System Integration

Infrared absorption spectroscopy is an effective tool for the detection and identification of molecules. However, its application is limited by the low infrared absorption cross-section of the molecule, resulting in low sensitivity and a poor signal-to-noise ratio. Surface-Enhanced Infrared Absorption (SEIRA) spectroscopy is a breakthrough technique that exploits the field-enhancing properties of periodic nanostructures to amplify the vibrational signals of trace molecules. The fascinating properties of SEIRA technology have aroused great interest, driving diverse sensing applications. In this review, we first discuss three ways for SEIRA performance optimization, including material selection, sensitivity enhancement, and bandwidth improvement. Subsequently, we discuss the potential applications of SEIRA technology in fields such as biomedicine and environmental monitoring. In recent years, we have ushered in a new era characterized by the Internet of Things, sensor networks, and wearable devices. These new demands spurred the pursuit of miniaturized and consolidated infrared spectroscopy systems and chips. In addition, the rise of machine learning has injected new vitality into SEIRA, bringing smart device design and data analysis to the foreground. The final section of this review explores the anticipated trajectory that SEIRA technology might take, highlighting future trends and possibilities.

Metasurface-Enhanced Infrared Spectroscopy: An Abundance of Materials and Functionalities

Infrared spectroscopy provides unique information on the composition and dynamics of biochemical systems by resolving the characteristic absorption fingerprints of their constituent molecules. Based on this inherent chemical specificity and the capability for label-free, noninvasive, and real-time detection, infrared spectroscopy approaches have unlocked a plethora of breakthrough applications for fields ranging from environmental monitoring and defense to chemical analysis and medical diagnostics. Nanophotonics has played a crucial role for pushing the sensitivity limits of traditional far-field spectroscopy by using resonant nanostructures to focus the incident light into nanoscale hot-spots of the electromagnetic field, greatly enhancing light-matter interaction. Metasurfaces composed of regular arrangements of such resonators further increase the design space for tailoring this nanoscale light control both spectrally and spatially, which has established them as an invaluable toolkit for surface-enhanced spectroscopy. Starting from the fundamental concepts of metasurface-enhanced infrared spectroscopy, a broad palette of resonator geometries, materials, and arrangements for realizing highly sensitive metadevices is showcased, with a special focus on emerging systems such as phononic and 2D van der Waals materials, and integration with waveguides for lab-on-a-chip devices. Furthermore, advanced sensor functionalities of metasurface-based infrared spectroscopy, including multiresonance, tunability, dielectrophoresis, live cell sensing, and machine-learning-aided analysis are highlighted.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics

Two-dimensional In₂Se₃, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In₂Se₃ working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In₂Se₃ offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.

Machine learning-augmented surface-enhanced spectroscopy toward next-generation molecular diagnostics

The world today is witnessing the significant role and huge demand for molecular detection and screening in healthcare and medical diagnosis, especially during the outbreak of COVID-19. Surface-enhanced spectroscopy techniques, including Surface-Enhanced Raman Scattering (SERS) and Infrared Absorption (SEIRA), provide lattice and molecular vibrational fingerprint information which is directly linked to the molecular constituents, chemical bonds, and configuration. These properties make them an unambiguous, nondestructive, and label-free toolkit for molecular diagnostics and screening. However, new issues in molecular diagnostics, such as increasing molecular species, faster spread of viruses, and higher requirements for detection accuracy and sensitivity, have brought great challenges to detection technology. Advancements in artificial intelligence and machine learning (ML) techniques show promising potential in empowering SERS and SEIRA with rapid analysis and automatic data processing to jointly tackle the challenge. This review introduces the combination of ML and SERS/SEIRA by investigating how ML algorithms can be beneficial to SERS/SEIRA, discussing the general process of combining ML and SEIRA/SERS, highlighting the molecular diagnostics and screening applications based on ML-combined SEIRA/SERS, and providing perspectives on the future development of ML-integrated SEIRA/SERS. In general, this review offers comprehensive knowledge about the recent advances and the future outlook regarding ML-integrated SEIRA/SERS for molecular diagnostics and screening.

Midinfrared Spectroscopic Analysis of Aqueous Mixtures Using Artificial-Intelligence-Enhanced Metamaterial Waveguide Sensing Platform

As miniaturized solutions, mid-infrared (MIR) waveguide sensors are promising for label-free compositional detection of mixtures leveraging plentiful absorption fingerprints. However, the quantitative analysis of liquid mixtures is still challenging using MIR waveguide sensors, as the absorption spectrum overlaps for multiple organic components accompanied by strong water absorption background. Here, we present an artificial-intelligence-enhanced metamaterial waveguide sensing platform (AIMWSP) for aqueous mixture analysis in the MIR. With the sensitivity-improved metamaterial waveguide and assistance of machine learning, the MIR absorption spectra of a ternary mixture in water can be successfully distinguished and decomposed to single-component spectra for predicting concentration. A classification accuracy of 98.88% for 64 mixing ratios and 92.86% for four concentrations below the limit of detection (972 ppm, based on 3σ) with steps of 300 ppm are realized. Besides, the mixture concentration prediction with root-mean-squared error varying from 0.107 vol % to 1.436 vol % is also achieved. Our work indicates the potential of further extending this sensing platform to MIR spectrometer-on-chip aiming for the data analytics of multiple organic components in aqueous environments.

Graphene-silicon-graphene Schottky junction photodetector with field effect structure

Graphene has unique advantages in ultrabroadband detection. However, nowadays graphene-based photodetectors cannot meet the requirements for practical applications due to their poor performance. Here, we report a graphene-silicon-graphene Schottky junction photodetector assisted by field effect. Two separate graphene sheets are located on both sides of the n-doped silicon to form two opposite lateral series heterojunctions with silicon, and a transparent top gate is designed to modulate the Schottky barrier. Low doping concentration of silicon and negative gate bias can significantly raise the barrier height. Under the combined action of these two measures, the barrier height increases from 0.39 eV to 0.77 eV. Accordingly, the performance of the photodetector has been greatly improved. The photoresponsivity of the optimized device is 2.6 A/W at 792 nm, 1.8 A/W at 1064 nm, and 0.42 A/W at 1550 nm, and the on/off photo-switching ratio reaches 10⁴. Our work provides a feasible solution for the development of graphene-based optoelectronic devices.

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe₂ with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz^-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s^-1. The achieved PdSe₂ photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.

Larger-Than-Unity External Optical Field Confinement Enabled by Metamaterial-Assisted Comb Waveguide for Ultrasensitive Long-Wave Infrared Gas Spectroscopy

Nanophotonic waveguides that implement long optical pathlengths on chips are promising to enable chip-scale gas sensors. Nevertheless, current absorption-based waveguide sensors suffer from weak interactions with analytes, limiting their adoptions in most demanding applications such as exhaled breath analysis and trace-gas monitoring. Here, we propose an all-dielectric metamaterial-assisted comb (ADMAC) waveguide to greatly boost the sensing capability. By leveraging large longitudinal electric field discontinuity at periodic high-index-contrast interfaces in the subwavelength grating metamaterial and its unique features in refractive index engineering, the ADMAC waveguide features strong field delocalization into the air, pushing the external optical field confinement factor up to 113% with low propagation loss. Our sensor operates in the important but underdeveloped long-wave infrared spectral region, where absorption fingerprints of plentiful chemical bonds are located. Acetone absorption spectroscopy is demonstrated using our sensor around 7.33 μm, showing a detection limit of 2.5 ppm with a waveguide length of only 10 mm.

Graphene composite structure based optical absorption pressure sensor

In this paper, a graphene composite structure based optical absorption pressure sensor is proposed. First, a composite structure which is composed of PDMS micro-pyramid structure, graphene film, and waveguide is introduced. The sensitive mechanism and dynamic working state of the pressure sensor are analyzed continuously. Second, the mapping between the pressure on PDMS and its contact area with the graphene film is deeply analyzed, as well as the optical transmission properties of graphene combined with waveguides, followed by a series of simulations about the optical power output performance facing different pressure conditions. Finally, the designed sensor samples are prepared and a series of performance verification experiments were carried out. The experimental results show that the range of the pressure sensor is 0-870kPa. The sensitivity in the pressure range of 0-100kPa is 2.83×10^-1µW/kPa. The experimental results effectively prove that the designed graphene composite structure based optical absorption pressure sensor has high sensitivity and good repeatability, which further verifies the feasibility of the design and analysis method.

Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior

Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W^-1 and high optical detectivity of 1.9 × 10¹⁰ cm Hz^1/2 W^-1 under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system.

Reconfigurable terahertz metamaterials: From fundamental principles to advanced 6G applications

Terahertz (THz) electromagnetic spectrum ranging from 0.1THz to 10THz has become critical for sixth generation (6G) applications, such as high-speed communication, fingerprint chemical sensing, non-destructive biosensing, and bioimaging. However, the limited response of naturally existing materials THz waves has induced a gap in the electromagnetic spectrum, where a lack of THz functional devices using natural materials has occurred in this gap. Metamaterials, artificially composed structures that can engineer the electromagnetic properties to manipulate the waves, have enabled the development of many THz devices, known as "metadevices". Besides, the tunability of THz metadevices can be achieved by tunable structures using microelectromechanical system (MEMS) technologies, as well as tunable materials including phase change materials (PCMs), electro-optical materials (EOMs), and thermo-optical materials (TOMs). Leveraging various tuning mechanisms together with metamaterials, tremendous research works have demonstrated reconfigurable functional THz devices, playing an important role to fill the THz gap toward the 6G applications. This review introduces reconfigurable metadevices from fundamental principles of metamaterial resonant system to the design mechanisms of functional THz metamaterial devices and their related applications. Moreover, we provide perspectives on the future development of THz photonic devices for state-of-the-art applications.

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

The noble transition metal dichalcogenide palladium diselenide (PdSe₂) is an ideal candidate material for broad-spectrum photodetection owing to the large bandgap tunability, high mobility, low thermal conductivity, and large Seebeck coefficient. In this study, self-powered ultrabroadband PdSe₂ photodetectors from the visible-infrared to terahertz (THz) region driven by a mutiphysical mechanism are reported. In the visible-infrared region, the photogenerated electron-hole pairs in the PdSe₂ body are quickly separated by the built-in electric field at the metal-semiconductor interface and achieve a photoresponsivity of 28 A·W^-1 at 405 nm and 0.4 A·W^-1 at 1850 nm. In the THz region, PdSe₂ photodetectors display a room-temperature responsivity of 20 mA·W^-1 at 0.10 THz and 5 mA·W^-1 at 0.24 THz based on efficient production of hot carriers in an antenna-assisted structure. Owing to the fast response speed of ∼7.5 μs and low noise equivalent power of ∼900 pW·Hz^-1/2, high-resolution transmission THz imaging is demonstrated under an ambient environment at room temperature. Our research validates the great potential of PdSe₂ for broadband photodetection and provides a possibility for future optoelectronic applications.

Recent Progress in the Energy Harvesting Technology-From Self-Powered Sensors to Self-Sustained IoT, and New Applications

With the fast development of energy harvesting technology, micro-nano or scale-up energy harvesters have been proposed to allow sensors or internet of things (IoT) applications with self-powered or self-sustained capabilities. Facilitation within smart homes, manipulators in industries and monitoring systems in natural settings are all moving toward intellectually adaptable and energy-saving advances by converting distributed energies across diverse situations. The updated developments of major applications powered by improved energy harvesters are highlighted in this review. To begin, we study the evolution of energy harvesting technologies from fundamentals to various materials. Secondly, self-powered sensors and self-sustained IoT applications are discussed regarding current strategies for energy harvesting and sensing. Third, subdivided classifications investigate typical and new applications for smart homes, gas sensing, human monitoring, robotics, transportation, blue energy, aircraft, and aerospace. Lastly, the prospects of smart cities in the 5G era are discussed and summarized, along with research and application directions that have emerged.

Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light-analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.