1
|
Xie X, Li S, Chen J, Ding J, He J, Liu Z, Wang JT, Liu Y. Tunable Valley Pseudospin and Electron-Phonon Coupling in WSe 2/1T-VSe 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:53220-53230. [PMID: 39298334 DOI: 10.1021/acsami.4c11399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2024]
Abstract
Heterostructure engineering provides versatile platforms for exploring exotic physics and enhancing the device performance through interface coupling. Despite the rich array of physical phenomena presented by heterostructures composed of semiconductor and metal van der Waals materials, significant gaps remain in understanding their optical, thermal, and electronic properties. Here, we demonstrate that the valley pseudospin and electron-phonon coupling in monolayer WSe2 are significantly influenced by interface coupling with 1T-VSe2. The heterointerface alters the relaxation process of valley excitons, leading to a transition in magnetic-field-dependent valley polarization from a linear to a "V" shape. Furthermore, we uncover that enhanced electron-phonon coupling exacerbates variations in exciton and valley exciton behavior with temperature, involving higher phonon energies and a shift from acoustic to optical phonons. These findings highlight a promising pathway to manipulate valley excitons and investigate electron-phonon coupling through van der Waals interface interactions.
Collapse
Affiliation(s)
- Xing Xie
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junying Chen
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Jun He
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, the University of Sydney, Sydney, New South Wales 2006, Australia
- The University of Sydney Nano Institute, the University of Sydney, Sydney, New South Wales 2006, Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
| |
Collapse
|
2
|
Su C, Yan H, Li H, Yan J, Tong L, Wang X, Fan W, Wang Q, Yin S. Controlled growth of 3R phase niobium diselenide and its properties. J Colloid Interface Sci 2024; 670:28-40. [PMID: 38754329 DOI: 10.1016/j.jcis.2024.05.036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 03/31/2024] [Accepted: 05/07/2024] [Indexed: 05/18/2024]
Abstract
Inversion symmetry broken 3R phase transition metal dichalcogenides (TMDs) show fascinating prospects in spintronics, valleytronics, and nonlinear optics. However, the controlled synthesis of 3R phase TMDs is still a great challenge. In this work, two-dimensional 3R-NbSe2 single crystals up to 0.2 mm were synthesized for the first time through chemical vapor deposition method by designing a space-confined system. The crystal size and morphology can be controlled by the location of the stacked substrates and the amount of the Nb2O5 precursor. Scanning transmission electron microscopy and Raman measurements reveal the NbSe2 exhibits a pure 3R stacking mode with relatively weak interlayer van der Waals interactions. Importantly, 3R-NbSe2 shows obvious second harmonic generation signal which intensity intensified as thickness increases. Density functional theory calculations and optical absorption demonstrate the coexistence of metallic and semiconducting optical properties of 3R-NbSe2. We designed a NbSe2/WS2/NbSe2 photodetector utilizing the metallicity of 3R-NbSe2, which shows good performance especially an ultrafast response (6-7 μs, 0.5 ms - 7.9 s for Au electrodes in literature). The proposed strategy and findings are of great significance for the growth of many other 3R-TMDs and applications of nonlinear optical and ultrafast devices.
Collapse
Affiliation(s)
- Can Su
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Hui Yan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Heng Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China; Jiujiang Research Institute of Xiamen University, Jiujiang 332000, China
| | - Jinjian Yan
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
| | - Lei Tong
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xinyu Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenhao Fan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qingguo Wang
- GuoAng Zhuotai (Tianjin) Smart IOT Technology Co., Ltd, Tianjin 301700, China
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| |
Collapse
|
3
|
Sun C, Ye H, Zhu Y, Chen L, Bai D, Wang J. Ferroelectrically controlled electromagnetic and transport properties of VN 2H 2/Al 2O 3 van der Waals multiferroic heterostructures. NANOSCALE 2024; 16:15746-15757. [PMID: 39105441 DOI: 10.1039/d4nr01441c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2024]
Abstract
The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic semiconductors owing to the lack of intrinsic single-phase multiferroic materials in nature. In this study, we propose a VN2H2/Al2O3 van der Waals magnetoelectric multiferroic heterostructure and investigate its electronic, magnetic, and transport properties using density functional theory combined with the Boltzmann transport theory. The VN2H2 monolayer is a room-temperature ferromagnetic semiconductor with a band gap of 0.24 eV and a Curie temperature of 411 K, while the Al2O3 monolayer is a ferroelectric semiconductor with a polarization value of 0.11 C m-2. In the VN2H2/Al2O3 van der Waals heterostructures, the conversion between the metal and the semiconductor can be controlled by altering the polarization of the Al2O3 layer. The VN2H2/Al2O3 van der Waals heterostructure retains room-temperature ferromagnetism, and the reverse of polarization is accompanied with a change in the direction of the easy magnetization axis. In addition, electrostatic doping can significantly improve the conductivity of the downward polarization state and transform the upward polarization state from a metal to a half-metal, achieving 100% spin polarization. Our results thus pave the way for achieving highly tunable electromagnetic and transport properties in van der Waals magnetoelectric heterostructures, which have potential applications in next-generation low-power logic and memory devices.
Collapse
Affiliation(s)
- Caijia Sun
- School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Haoshen Ye
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Yijie Zhu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093, Nanjing, China
| | - Leiming Chen
- School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Dongmei Bai
- School of Mathematics, China University of Mining and Technology, Xuzhou 221116, China.
| | - Jianli Wang
- School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
| |
Collapse
|
4
|
Li J, Chen Z, Zhou J, Zhang Y, Li X, Wu Z, Wu Y, Kang J. Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting. ACS NANO 2024; 18:10921-10929. [PMID: 38608131 DOI: 10.1021/acsnano.4c01526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Proximate-induced magnetic interactions present a promising strategy for precise manipulation of valley degrees of freedom. Taking advantage of the splendid valleytronic platform of transition metal dichalcogenides, magnetic two-dimensional VSe2 with different phases are introduced to intervene in the spin of electrons and modulate their valleytronic properties. When constructing the heterostructures, 1T-VSe2/WX2 (X = S and Se) showcases significant improvement in the valley polarizations at room temperature, while 2H-VSe2/WX2 exhibits superior performance at low temperatures and demonstrates heightened sensitivity to the external magnetic field. Simultaneously, considerable valley splitting with a large geff factor up to -29.0 is observed in 2H-VSe2/WS2, while it is negligible in 1T-VSe2/WX2. First-principles calculations reveal a phase-dependent magnetic proximity mechanism on the valleytronic modulations, which is dominated by interfacial charge transfer in 1T-VSe2/WX2 and the proximity exchange field in 2H-VSe2/WX2 heterostructures. The effective control over valley degrees of freedom will bridge the valleytronic physics and devices, rendering enormous potential in the field of valley quantum applications.
Collapse
Affiliation(s)
- Jin'an Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zilong Chen
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Jiangpeng Zhou
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yiteng Zhang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| |
Collapse
|
5
|
Yan S, He HH, Fu Y, Zhao NN, Tian S, Yin Q, Meng F, Cao X, Wang L, Chen S, Son KH, Choi JW, Ryu H, Wang S, Lei H, Liu K, Zhang X. Near-room temperature ferromagnetism and a tunable anomalous Hall effect in atomically thin Fe 4CoGeTe 2. NANOSCALE 2024; 16:1406-1414. [PMID: 38165953 DOI: 10.1039/d3nr03594h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Itinerant ferromagnetism at room temperature is a key factor for spin transport and manipulation. Here, we report the realization of near-room temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (∼323 K-337 K) is almost unchanged when the thickness is as low as 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of the band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The near-room temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.
Collapse
Affiliation(s)
- Shaohua Yan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Hui-Hui He
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Yang Fu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Ning-Ning Zhao
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Shangjie Tian
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Qiangwei Yin
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Fanyu Meng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Xinyu Cao
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| | - Le Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Shanshan Chen
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Shouguo Wang
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Kai Liu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
| | - Xiao Zhang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
| |
Collapse
|
6
|
Liu MY, Li GQ, He Y, Xiong K. Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ 4 (Z = N, P, As) monolayers. Phys Chem Chem Phys 2024; 26:2341-2354. [PMID: 38165967 DOI: 10.1039/d3cp04889f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Polarization, as an important characterization of the symmetry breaking systems, has attracted tremendous attention in two-dimensional (2D) materials. Due to their significant symmetry breaking, Janus 2D ferrovalley materials provide a desirable platform to investigate the charge, spin, and valley polarization, as well as their coupling effects. Herein, using first-principles calculations, the polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z = N, P, and As) monolayers are systematically studied. The mirror symmetry breaking leads to a non-zero dipole moment and surface work function difference, indicating the presence of out-of-plane charge polarization. Magnetic properties calculations demonstrate that VSiGeN4 is a 2D-XY magnet with a Berezinskii-Kosterlitz-Thouless temperature of 342 K, while VSiGeP4 and VSiGeAs4 have an out-of-plane magnetization with a Curie temperature below room temperature. The magnetization can be rotated by applying biaxial strain, allowing manipulation of the spin polarization via nonmagnetic means. The spontaneous valley polarization is predicted to be 46, 49, and 70 meV for VSiGeN4, VSiGeP4, and VSiGeAs4, respectively, whose physical origin can be elucidated by employing the model analysis. In particular, the biaxial strain can induce the valley polarization switching from the valence (conduction) band to conduction (valence) band, but it hardly changes the valley polarization strength. Meanwhile, the valley extremum is transformed from the K' (K) to K (K') points. The present work not only provides an underlying insight into the polarization properties of Janus VSiGeZ4 but also offers a class of promising materials for spintronic and valleytronic devices.
Collapse
Affiliation(s)
- Ming-Yang Liu
- Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Guang-Qiang Li
- Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, P. R. China
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
| |
Collapse
|
7
|
Zhang Z, Polak MP, Carlos C, Dong Y, Morgan D, Wang X. Strong Room-Temperature Ferromagnetism in Ultrathin NiOOH Nanosheets through Surfactant Manipulation. ACS NANO 2023; 17:22979-22989. [PMID: 37955390 DOI: 10.1021/acsnano.3c08233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Two-dimensional (2D) ferromagnetic (FM) materials with nanoscale thickness and spontaneous net magnetization have emerged as a promising class of functional materials for applications in next-generation spintronics, quantum processing, and data storage devices. However, most 2D materials exhibit weak FM even at low temperatures, limiting their potential applications in many technological fields. The fabrication of strong room-temperature FM 2D materials is highly desirable for the development of practical applications. Here, we demonstrate an ionic layer epitaxy strategy to synthesize few-layered NiOOH nanosheets with strong room-temperature FM and a saturation magnetization up to 409.86 emu cm-3 at 300 K. The results are consistent with the ab initio predictions of a stable FM NiOOH nanolayer structure with an FM configuration. The FM strength of the NiOOH nanosheets can be tuned by controlling the surfactant monolayer density and annealing. This work offers a promising strategy for achieving strong high-temperature FM in 2D materials for spintronic applications.
Collapse
Affiliation(s)
- Ziyi Zhang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Maciej P Polak
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Corey Carlos
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Yutao Dong
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Dane Morgan
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Xudong Wang
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| |
Collapse
|
8
|
Chen B, Xue L, Han Y, Yang Z, Zhang YJ. Magnetic semiconducting borophenes and their derivatives. Phys Chem Chem Phys 2023; 25:30897-30902. [PMID: 37955266 DOI: 10.1039/d3cp04069k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Two semiconducting borophenes with layer-dependent magnetism are predicted based on spin-polarized density functional theory. Both monolayer borophenes are ferromagnetic. One is composed of B3 and B15 triangular motifs, exhibiting bipolar spin polarization and a magnetic moment of 1.00 μB per primitive cell. The other consists of B15 triangular motifs, possessing a Curie temperature of about 437 K and a magnetic moment of 3.00 μB per primitive cell. B atoms located between the triangular motifs are essential for inducing ferromagnetism in monolayer borophenes. However, bilayer borophenes with high-symmetry stacking orders are nonmagnetic. Furthermore, magnetic boron nanotubes and fullerenes could be made of monolayer borophenes. Finally, we propose to fabricate these magnetic semiconducting borophenes from the buckled triangular structure of borophenes via selective electron beam ionization of B atoms by scanning transmission electron microscopy.
Collapse
Affiliation(s)
- Bo Chen
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Lin Xue
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Yan Han
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Zhi Yang
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| | - Yong-Jia Zhang
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, P. R. China.
| |
Collapse
|
9
|
Pu Y, Li Y, Qiu Z, Zhou L, Fang C, Lou Y, Lv B, Wei J, Wang W, Dai Q. Electron transport, ferroelectric, piezoelectric and optical properties of two-dimensional In 2Te 3: a first-principles study. Phys Chem Chem Phys 2023; 25:28861-28870. [PMID: 37853781 DOI: 10.1039/d3cp01523h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2023]
Abstract
Two-dimensional (2D) materials have garnered significant interest in the fields of optoelectronics and electronics due to their unique and diverse properties. In this work, the electron transport, ferroelectric, piezoelectric, and optical properties of 2D In2Te3 were systematically investigated using first-principles based on density functional theory. The analysis of the phonon spectrum and elastic modulus of the Born effective criterion indicates that the structure of the novel 2D In2Te3 is dynamically stable. The calculation results show that 2D In2Te3 exhibits a carrier mobility as high as 3680.99 cm2 V-1 s-1 (y direction), a high in-plane polarization of 2.428 × 10-10 C m-1, and an excellent ferroelectric phase transition barrier (52.847 meV) and piezoelectric properties (e11 = 1.52 × 10-10 C m-1). The higher carrier mobility is attributed to the band degeneracy and small carrier effective mass. In addition, biaxial strain is an effective way to modulate the band gap and optical properties of 2D In2Te3. These properties indicate that 2D In2Te3 is a promising candidate material for flexible electronic devices and ferroelectric photovoltaic devices.
Collapse
Affiliation(s)
- Yuanmao Pu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Yumin Li
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Zhibin Qiu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Lang Zhou
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Chuanli Fang
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Yaya Lou
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Bing Lv
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Jun Wei
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Wenzhong Wang
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
- School of Science, Minzu University of China, Beijing 100081, China
| | - Qingping Dai
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| |
Collapse
|
10
|
Zong J, Dong ZY, Huang J, Wang K, Wang QW, Meng Q, Tian Q, Qiu X, Mu Y, Wang L, Ren W, Xie X, Chen W, Zhang Y, Wang C, Li FS, Li SC, Li JX, Yuan H, Zhang Y. Inducing itinerant ferromagnetism by manipulating van Hove singularity in epitaxial monolayer 1T-VSe 2. Sci Bull (Beijing) 2023; 68:990-997. [PMID: 37100643 DOI: 10.1016/j.scib.2023.04.016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 03/16/2023] [Accepted: 04/06/2023] [Indexed: 04/28/2023]
Abstract
The itinerant ferromagnetism can be induced by a van Hove singularity (VHS) with a divergent density of states at Fermi level. Utilizing the giant magnified dielectric constant εr of SrTiO3(111) substrate with cooling, here we successfully manipulated the VHS in the epitaxial monolayer (ML) 1T-VSe2 film approaching to Fermi level via the large interfacial charge transfer, and thus induced a two-dimensional (2D) itinerant ferromagnetic state below 3.3 K. Combining the direct characterization of the VHS structure via angle-resolved photoemission spectroscopy (ARPES), together with the theoretical analysis, we ascribe the manipulation of VHS to the physical origin of the itinerant ferromagnetic state in ML 1T-VSe2. Therefore, we further demonstrated that the ferromagnetic state in the 2D system can be controlled through manipulating the VHS by engineering the film thickness or replacing the substrate. Our findings clearly evidence that the VHS can serve as an effective manipulating degree of freedom for the itinerant ferromagnetic state, expanding the application potentials of 2D magnets for the next-generation information technology.
Collapse
Affiliation(s)
- Junyu Zong
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhao-Yang Dong
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Junwei Huang
- College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China
| | - Kaili Wang
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qi-Wei Wang
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qinghao Meng
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qichao Tian
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Xiaodong Qiu
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yuyang Mu
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Li Wang
- Vacuum Interconnected NanoTech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Wei Ren
- Vacuum Interconnected NanoTech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Xuedong Xie
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Wang Chen
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yongheng Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Can Wang
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fang-Sen Li
- Vacuum Interconnected NanoTech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Shao-Chun Li
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jian-Xin Li
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Hongtao Yuan
- College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Yi Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| |
Collapse
|
11
|
Jia K, Dong XJ, Li SS, Ji WX, Zhang CW. Spontaneous valley polarization and valley-nonequilibrium quantum anomalous Hall effect in Janus monolayer ScBrI. NANOSCALE 2023; 15:8395-8405. [PMID: 37092871 DOI: 10.1039/d2nr07221a] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Topology and ferrovalley (FV) are two essential concepts in emerging device applications and the fundamental research field. To date, relevant reports are extremely rare about the coupling of FV and topology in a single system. By Monte Carlo (MC) simulations and first-principles calculations, a stable intrinsic FV ScBrI semiconductor with high Curie temperature (TC) is predicted. Because of the combination of spin-orbital coupling (SOC) and exchange interaction, the Janus monolayer ScBrI shows a spontaneous valley polarization of 90 meV, which is located in the top valence band. For the magnetization direction perpendicular to the plane, the changes from FV to half-valley-metal (HVM), to valley-nonequilibrium quantum anomalous Hall effect (VQAHE), to HVM, and to FV can be induced by strain engineering. It is worth noting that there are no particular valley polarization and VQAHE states for in-plane (IP) magnetic anisotropy. By obtaining the real magnetic anisotropy energy (MAE) under different strains, due to spontaneous valley polarization, intrinsic out-of-plane (OOP) magnetic anisotropy, a chiral edge state, and a unit Chern number, the VQAHE can reliably appear between two HVM states. The increasing strains can induce VQAHE, which can be clarified by a band inversion between dx2-y2/dxy and dz2 orbitals, and a sign-reversible Berry curvature. Once synthesized, the Janus monolayer ScBrI would find more significant applications in topological electronic, valleytronic, and spintronic nanodevices.
Collapse
Affiliation(s)
- Kang Jia
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Xiao-Jing Dong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Sheng-Shi Li
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Wei-Xiao Ji
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Chang-Wen Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| |
Collapse
|
12
|
Wines D, Tiihonen J, Saritas K, Krogel JT, Ataca C. A Quantum Monte Carlo Study of the Structural, Energetic, and Magnetic Properties of Two-Dimensional H and T Phase VSe 2. J Phys Chem Lett 2023; 14:3553-3560. [PMID: 37017431 DOI: 10.1021/acs.jpclett.3c00497] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Previous works have controversially claimed near-room-temperature ferromagnetism in two-dimensional (2D) VSe2, with conflicting results throughout the literature. These discrepancies in magnetic properties between both phases (T and H) of 2D VSe2 are most likely due to the structural parameters being coupled to the magnetic properties. Specifically, both phases have a close lattice match and similar total energies, which makes it difficult to determine which phase is being observed experimentally. In this study, we used a combination of density functional theory, highly accurate diffusion Monte Carlo (DMC), and a surrogate Hessian line-search optimization technique to resolve the previously reported discrepancy in structural parameters and relative phase stability. With DMC accuracy, we determined the free-standing geometry of both phases and constructed a phase diagram. Our findings demonstrate the successes of the DMC method coupled with the surrogate Hessian structural optimization technique when applied to a 2D magnetic system.
Collapse
Affiliation(s)
- Daniel Wines
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Juha Tiihonen
- Department of Physics, Nanoscience Center, University of Jyväskylä, P.O. Box 35, 40014 Jyväskylä, Finland
| | - Kayahan Saritas
- Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Jaron T Krogel
- Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Can Ataca
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, United States
| |
Collapse
|
13
|
Guzman R, Ning S, Zhang R, Liu H, Ma Y, Zhang YY, Bao L, Yang H, Du S, Bosman M, Pennycook SJ, Gao HJ, Zhou W. Collective Magnetic Behavior in Vanadium Telluride Induced by Self-Intercalation. ACS NANO 2023; 17:2450-2459. [PMID: 36716185 DOI: 10.1021/acsnano.2c09762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Self-intercalation of native magnetic atoms within the van der Waals (vdW) gap of layered two-dimensional (2D) materials provides a degree of freedom to manipulate magnetism in low-dimensional systems. Among various vdW magnets, the vanadium telluride is an interesting system to explore the interlayer order-disorder transition of magnetic impurities due to its flexibility in taking nonstoichiometric compositions. In this work, we combine high-resolution scanning transmission electron microscopy (STEM) analysis with density functional theory (DFT) calculations and magnetometry measurements, to unveil the local atomic structure and magnetic behavior of V-rich V1+xTe2 nanoplates with embedded V3Te4 nanoclusters grown by chemical vapor deposition (CVD). The segregation of V intercalations locally stabilizes the self-intercalated V3Te4 magnetic phase, which possesses a distorted 1T'-like monoclinic structure. This phase transition is controlled by the electron doping from the intercalant V ions. The magnetic hysteresis loops show that the nanoplates exhibit superparamagnetism, while the temperature-dependent magnetization curves evidence a collective superspin-glass magnetic behavior of the nanoclusters at low temperature. Using four-dimensional (4D) STEM diffraction imaging, we reveal the formation of collective diffuse magnetic domain structures within the sample under the high magnetic fields inside the electron microscope. Our results shed light on the studies of dilute magnetism at the 2D limit and on strategies for the manipulation of magnetism for spintronic applications.
Collapse
Affiliation(s)
- Roger Guzman
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, 117575Singapore, Singapore
| | - Ruizi Zhang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Hongtao Liu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Yinhang Ma
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Yu-Yang Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Haitao Yang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Shixuan Du
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Michel Bosman
- Department of Materials Science and Engineering, National University of Singapore, 117575Singapore, Singapore
| | - Stephen J Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Science, Beijing100190, People's Republic of China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
- CAS Centre for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| |
Collapse
|
14
|
Wu C, Zhao Y, Zhang G, Liu C. Giant thermal switching in ferromagnetic VSe 2 with programmable switching temperature. NANOSCALE HORIZONS 2023; 8:202-210. [PMID: 36484168 DOI: 10.1039/d2nh00429a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Active and reversible modulation of thermal conductivity can realize efficient heat energy management in many applications such as thermoelectrics. Using first-principles calculations, this study reports a giant thermal switching ratio of 12, much higher than previously reported values, in monolayer 2H-VSe2 above room temperature. Detailed analysis indicates that the high thermal switching ratio is dominated by the ferromagnetic ordering induced phonon bandgap, which significantly suppresses the phonon-phonon scattering phase space across the entire vibration spectrum. The thermal switching in bulk 2H-VSe2 is also investigated and the thermal switching ratio reaches 9.2 at the magnetic transition temperature. Both the phonon-phonon scattering space phase and phonon anharmonicity are responsible for the 9.2-fold thermal switching. This study advances the understanding of heat energy transport in two-dimensional ferromagnets, and also provides new insight into heat energy control and conversion.
Collapse
Affiliation(s)
- Chao Wu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China.
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211100, P. R. China
| | - Yunshan Zhao
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Gang Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore.
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China.
- Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, Nanjing Normal University, Nanjing, 210023, P. R. China
| |
Collapse
|
15
|
Chen H, Asif S, Dolui K, Wang Y, Támara-Isaza J, Goli VMLDP, Whalen M, Wang X, Chen Z, Zhang H, Liu K, Jariwala D, Jungfleisch MB, Chakraborty C, May AF, McGuire MA, Nikolic BK, Xiao JQ, Ku MJH. Above-Room-Temperature Ferromagnetism in Thin van der Waals Flakes of Cobalt-Substituted Fe 5GeTe 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3287-3296. [PMID: 36602594 DOI: 10.1021/acsami.2c18028] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying the fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling thin and highly tunable spintronic devices. To realize high-quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here, the study of exfoliated flakes of cobalt-substituted Fe5GeTe2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm corresponding to 16 layers. This result expands the portfolio of thin room-temperature 2D magnet flakes exfoliated from robust single crystals that reach a thickness regime relevant to practical spintronic applications. The Curie temperature Tc of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed, which predicted a high value of Tc of ∼270 K in CFGT monolayers. Pathways toward further enhancing monolayer Tc are discussed. These results support CFGT as a promising platform for realizing high-quality room-temperature 2D magnet devices.
Collapse
Affiliation(s)
- Hang Chen
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Shahidul Asif
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware19716, United States
| | - Kapildeb Dolui
- Lomare Technologies Ltd., 6 London Street, LondonEC3R 7LP, United Kingdom
| | - Yang Wang
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Jeyson Támara-Isaza
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
- Departamento de Física, Universidad Nacional de Colombia, Bogotá D.C.110851, Colombia
| | - V M L Durga Prasad Goli
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Matthew Whalen
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Xinhao Wang
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Zhijie Chen
- Department of Physics, Georgetown University, Washington, District of Columbia20057, United States
| | - Huiqin Zhang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania19104, United States
| | - Kai Liu
- Department of Physics, Georgetown University, Washington, District of Columbia20057, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania19104, United States
| | - M Benjamin Jungfleisch
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Chitraleema Chakraborty
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware19716, United States
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Michael A McGuire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Branislav K Nikolic
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - John Q Xiao
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Mark J H Ku
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware19716, United States
| |
Collapse
|
16
|
You J, Pan J, Shang SL, Xu X, Liu Z, Li J, Liu H, Kang T, Xu M, Li S, Kong D, Wang W, Gao Z, Zhou X, Zhai T, Liu ZK, Kim JK, Luo Z. Salt-Assisted Selective Growth of H-phase Monolayer VSe 2 with Apparent Hole Transport Behavior. NANO LETTERS 2022; 22:10167-10175. [PMID: 36475688 DOI: 10.1021/acs.nanolett.2c04133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
Collapse
Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jie Pan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Xiang Xu
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jingwei Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Mengyang Xu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shaobo Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Deqi Kong
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wenliang Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhaoli Gao
- Department of Biomedical Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong999777, P. R. China
- CUHK Shenzhen Research Institute, No.10, second, Yuexing Road, Nanshan, Shenzhen518057, P. R. China
| | - Xing Zhou
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Jang-Kyo Kim
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- The Hong Kong University of Science and Technology Shenzhen Research Institute, No. 9 Yuexing first RD, South Area Hi-tech Park, Nanshan, Shenzhen518057, China
| |
Collapse
|
17
|
Wu Y, Li J, Liu Y. Two-dimensional chalcogenide-based ferromagnetic semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:083002. [PMID: 36540916 DOI: 10.1088/1361-648x/acaa7e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 12/09/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical fields, exhibiting promising application prospects. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical models. We also focus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (Tc) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic-layer thickness, which is significant to design spintronics devices.
Collapse
Affiliation(s)
- Yanling Wu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Jun Li
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| |
Collapse
|
18
|
Kabiraj A, Jain T, Mahapatra S. Massive Monte Carlo simulations-guided interpretable learning of two-dimensional Curie temperature. PATTERNS (NEW YORK, N.Y.) 2022; 3:100625. [PMID: 36569550 PMCID: PMC9782261 DOI: 10.1016/j.patter.2022.100625] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Revised: 09/09/2022] [Accepted: 10/11/2022] [Indexed: 11/16/2022]
Abstract
Monte Carlo (MC) simulation of the classical Heisenberg model has become the de facto tool to estimate the Curie temperature (T C) of two-dimensional (2D) magnets. As an alternative, here we develop data-driven models for the five most common crystal types, considering the isotropic and anisotropic exchange of up to four nearest neighbors and the single-ion anisotropy. We sample the 20-dimensional Heisenberg spin Hamiltonian and conceive a bisection-based MC technique to simulate a quarter of a million materials for training deep neural networks, which yield testing R 2 scores of nearly 0.99. Since 2D magnetism has a natural tendency toward low T C, learning-from-data is combined with data-from-learning to ensure a nearly uniform final data distribution over a wide range of T C (10-1,000 K). Global and local analysis of the features confirms the models' interpretability. We also demonstrate that the T C can be accurately estimated by a purely first-principles-based approach, free from any empirical corrections.
Collapse
Affiliation(s)
- Arnab Kabiraj
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bengaluru 560012, India
| | - Tripti Jain
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bengaluru 560012, India
| | - Santanu Mahapatra
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bengaluru 560012, India,Corresponding author
| |
Collapse
|
19
|
Yu BW, Liu BG. Stress-driven structural and bond reconstruction in 2D ferromagnetic semiconductor VSe 2. NANOTECHNOLOGY 2022; 33:455706. [PMID: 35905699 DOI: 10.1088/1361-6528/ac8558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2022] [Accepted: 07/28/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides can be used to make high-performance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconduction in 2D VSe2nanoflakes were attributed to the stable 2H-phase of VSe2in the 2D limit. Here, our first-principles investigation shows that a metastable semiconducting H' phase can be formed from the H VSe2 monolayer through uniaxial stress or uniaxial strain. The calculated phonon spectra indicate the dynamical stability of the metastable H' VSe2and the path of phase switching between the H and H' VSe2phases is calculated. For the uniaxial stress (or strain) scheme, the H' phase can become lower in total energy than the H phase at a transition point. The H' phase has stronger ferromagnetism and its Curier temperature can be enhanced by applying uniaxial stress or strain. Applying uniaxial stress or strain can substantially change spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H' phases, and can cause some flat bands near the band edges in the strained H' phase. Further analysis indicates that one of the Se-Se bonds in the H' phase can be shortened by 19% and the related Se-V-Se bond angles are reduced by 23% with respect to those of the H phase, which is believed to increase the Se-Se covalence feature and reduce the valence of the nearby V atoms. Therefore, structural and bond reconstruction can be realized by applying uniaxial stress in such 2D ferromagnetic semiconductors for potential spintronic and optoelectronic applications.
Collapse
Affiliation(s)
- Bo-Wen Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Bang-Gui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| |
Collapse
|
20
|
Hu C, Chen J, Du E, Ju W, An Y, Gong SJ. Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe 2/In 2Se 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:425801. [PMID: 35878601 DOI: 10.1088/1361-648x/ac8406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe2/In2Se3experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In2Se3, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In2Se3to VSe2, the heterostructure has a type-III band alignment, and the charge transfer from In2Se3into VSe2induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In2Se3is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe2was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe2/In2Se3predicts its wide applications in the fields of both 2D spintronics and multiferroics.
Collapse
Affiliation(s)
- Chen Hu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ju Chen
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Erwei Du
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Weiwei Ju
- College of Physics and Engineering and Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Yipeng An
- School of Physics and Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Shi-Jing Gong
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| |
Collapse
|
21
|
Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 70] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
Collapse
Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
| |
Collapse
|
22
|
Staros D, Hu G, Tiihonen J, Nanguneri R, Krogel J, Bennett MC, Heinonen O, Ganesh P, Rubenstein B. A combined first principles study of the structural, magnetic, and phonon properties of monolayer CrI 3. J Chem Phys 2022; 156:014707. [PMID: 34998345 DOI: 10.1063/5.0074848] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023] Open
Abstract
The first magnetic 2D material discovered, monolayer (ML) CrI3, is particularly fascinating due to its ground state ferromagnetism. However, because ML materials are difficult to probe experimentally, much remains unresolved about ML CrI3's structural, electronic, and magnetic properties. Here, we leverage Density Functional Theory (DFT) and high-accuracy Diffusion Monte Carlo (DMC) simulations to predict lattice parameters, magnetic moments, and spin-phonon and spin-lattice coupling of ML CrI3. We exploit a recently developed surrogate Hessian DMC line search technique to determine CrI3's ML geometry with DMC accuracy, yielding lattice parameters in good agreement with recently published STM measurements-an accomplishment given the ∼10% variability in previous DFT-derived estimates depending upon the functional. Strikingly, we find that previous DFT predictions of ML CrI3's magnetic spin moments are correct on average across a unit cell but miss critical local spatial fluctuations in the spin density revealed by more accurate DMC. DMC predicts that magnetic moments in ML CrI3 are 3.62 μB per chromium and -0.145 μB per iodine, both larger than previous DFT predictions. The large disparate moments together with the large spin-orbit coupling of CrI3's I-p orbital suggest a ligand superexchange-dominated magnetic anisotropy in ML CrI3, corroborating recent observations of magnons in its 2D limit. We also find that ML CrI3 exhibits a substantial spin-phonon coupling of ∼3.32 cm-1. Our work, thus, establishes many of ML CrI3's key properties, while also continuing to demonstrate the pivotal role that DMC can assume in the study of magnetic and other 2D materials.
Collapse
Affiliation(s)
- Daniel Staros
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, USA
| | - Guoxiang Hu
- Department of Chemistry and Biochemistry, Queens College, City University of New York, Flushing, New York 11367, USA
| | - Juha Tiihonen
- Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Ravindra Nanguneri
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, USA
| | - Jaron Krogel
- Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - M Chandler Bennett
- Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Olle Heinonen
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Brenda Rubenstein
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, USA
| |
Collapse
|