1
|
Yang Z, Peng X, Wang J, Lin J, Zhang C, Tang B, Zhang J, Yang W. Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe 2 Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38676636 DOI: 10.1021/acsami.4c02106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/29/2024]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) offer advantages over traditional silicon in future electronics but are hampered by the prominent high contact resistance of metal-TMD interfaces, especially for p-type TMDs. Here, we present high-performance p-type MoTe2 field-effect transistors via a nondestructive van der Waals (vdW) transfer process, establishing low contact resistance between the 2D MoTe2 semiconductor and the PtTe2 semimetal. The integration of PtTe2 as contacts in MoTe2 field-effect transistors leads to significantly improved electrical characteristics compared to conventional metal contacts, evidenced by a mobility increase to 80 cm2 V-1 s-1, an on-state current rise to 5.0 μA/μm, and a reduction in Schottky barrier height (SBH) to 48 meV. Such a low SBH in quasi-van der Waals contacts can be assigned to the low electrical resistivity of PtTe2 and the high efficiency of carrier injection at the 2D semimetal/2D semiconductor interfaces. Imaging via transmission electron microscopy reveals that the 2D semimetal/two-dimensional semiconductor interfaces are atomically flat and exceptionally clean. This interface engineering strategy could enable low-resistance contacts based on vdW architectures in a facile manner, providing opportunities for 2D materials for next-generation optoelectronics and electronics.
Collapse
Affiliation(s)
- Ze Yang
- Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
| | - Xingkun Peng
- Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
| | - Jinyong Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jialong Lin
- Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
| | - Chuanlun Zhang
- Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
| | - Baoshan Tang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jie Zhang
- Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
| | - Weifeng Yang
- Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
| |
Collapse
|
2
|
Reuter C, Ecke G, Strehle S. Exploring the Surface Oxidation and Environmental Instability of 2H-/1T'-MoTe 2 Using Field Emission-Based Scanning Probe Lithography. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310887. [PMID: 37931614 DOI: 10.1002/adma.202310887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Indexed: 11/08/2023]
Abstract
An unconventional approach for the resistless nanopatterning 2H- and 1T'-MoTe2 by means of scanning probe lithography is presented. A Fowler-Nordheim tunneling current of low energetic electrons (E = 30-60 eV) emitted from the tip of an atomic force microscopy (AFM) cantilever is utilized to induce a nanoscale oxidation on a MoTe2 nanosheet surface under ambient conditions. Due to the water solubility of the generated oxide, a direct pattern transfer into the MoTe2 surface can be achieved by a simple immersion of the sample in deionized water. The tip-grown oxide is characterized using Auger electron and Raman spectroscopy, revealing it consists of amorphous MoO3 /MoOx as well as TeO2 /TeOx . With the presented technology in combination with subsequent AFM imaging it is possible to demonstrate a strong anisotropic sensitivity of 1T'-/(Td )-MoTe2 to aqueous environments. Finally the discussed approach is used to structure a nanoribbon field effect transistor out of a few-layer 2H-MoTe2 nanosheet.
Collapse
Affiliation(s)
- Christoph Reuter
- Institute of Micro- and Nanotechnologies, Microsystems Technology Group, Technische Universität Ilmenau, Max-Planck-Ring 12, 98693, Ilmenau, Germany
| | - Gernot Ecke
- Institute of Micro- and Nanotechnologies, Nanotechnology Group, Technische Universität Ilmenau, Gustav-Kirchhoff-Straße 1, 98693, Ilmenau, Germany
| | - Steffen Strehle
- Institute of Micro- and Nanotechnologies, Microsystems Technology Group, Technische Universität Ilmenau, Max-Planck-Ring 12, 98693, Ilmenau, Germany
| |
Collapse
|
3
|
Cai J, Sun Z, Wu P, Tripathi R, Lan HY, Kong J, Chen Z, Appenzeller J. High-Performance Complementary Circuits from Two-Dimensional MoTe 2. NANO LETTERS 2023. [PMID: 37976291 DOI: 10.1021/acs.nanolett.3c03184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Two-dimensional (2D) materials hold great promise for future complementary metal-oxide semiconductor (CMOS) technology. However, the lack of effective methods to tune the Schottky barrier poses a challenge in constructing high-performance complementary circuits from the same material. Here, we reveal that the polarity of pristine MoTe2 field-effect transistors (FETs) with minimized air exposure is n-type, irrespective of the metal contact type. The fabricated n-FETs with palladium contact can reach electron currents up to 275 μA/μm at VDS = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe2 FETs from n-type to unipolar p-type. By doping only in the contact region, we demonstrate hole currents up to 170 μA/μm at VDS= -2 V with preserved Ion/Ioff ratios of 105. Finally, we present a complementary inverter circuit comprising the high-performance n- and p-type FETs based on MoTe2, promoting the application of 2D materials in future electronic systems.
Collapse
Affiliation(s)
- Jun Cai
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zheng Sun
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peng Wu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Rahul Tripathi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hao-Yu Lan
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jing Kong
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhihong Chen
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Joerg Appenzeller
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| |
Collapse
|
4
|
Lee B, Jeong BJ, Choi KH, Cho S, Jeon J, Kang J, Zhang X, Bang HS, Oh HS, Lee JH, Yu HK, Choi JY. Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42891-42899. [PMID: 37657071 DOI: 10.1021/acsami.3c09679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
Two-dimensional (2D) palladium phosphide sulfide (PdPS) has garnered significant attention, owing to its exotic physical properties originating from the distinct Cairo pentagonal tiling topology. Nevertheless, the properties of PdPS remain unexplored, especially for electronic devices. In this study, we introduce the thickness-dependent electrical characteristics of PdPS flakes into fabricated field-effect transistors (FETs). The broad thickness variation of the PdPS flakes, ranging from 0.7-306 nm, is prepared by mechanical exfoliation, utilizing large bulk crystals synthesized via chemical vapor transport. We evaluate this variation and confirm a high electron mobility of 14.4 cm2 V-1 s-1 and Ion/Ioff > 107. Furthermore, the 6.8 nm-thick PdPS FET demonstrates a negligible Schottky barrier height at the gold electrode contact, as evidenced by the measurement of the temperature-dependent transfer characteristics. Consequently, we adjusted the Fowler-Nordheim tunneling mechanism to elucidate the charge-transport mechanism, revealing a modulated mobility variation from 14.4 to 41.2 cm2 V-1 s-1 with an increase in the drain voltage from 1 to 5 V. The present findings can broaden the understanding of the unique properties of PdPS, highlighting its potential as a 2D ternary chalcogenide in future electronic device applications.
Collapse
Affiliation(s)
- Bom Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsu Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xiaojie Zhang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyeon-Seok Bang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hyung-Suk Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| |
Collapse
|
5
|
Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
Collapse
Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| |
Collapse
|
6
|
Das S, Das S. Digital Keying Enabled by Reconfigurable 2D Modulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203753. [PMID: 36057140 DOI: 10.1002/adma.202203753] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2022] [Revised: 08/21/2022] [Indexed: 06/15/2023]
Abstract
Energy, area, and bandwidth efficient communication primitives are essential to sustain the rapid increase in connectivity among internet-of-things (IoT) edge devices. While IoT edge-sensing, edge-computing, and edge-storage have witnessed innovation in materials and devices, IoT edge communication is yet to experience such transformation. The aging silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology continues to remain the mainstay of communication devices where they are used to implement amplitude, frequency, and phase shift keying (amplitude-shift keying [ASK]/frequency-shift keying [FSK]/phase-shift keying [PSK]). Keying allows digital information to be communicated over a radio channel. While CMOS-based keying devices have evolved over the years, their hardware footprint and energy consumption are major concerns for resource constrained IoT communication. Furthermore, separate circuit designs and hardware elements are needed for each keying scheme and achieving multibit modulation to improve bandwidth efficiency remains a challenge. Here, a reconfigurable modulator is introduced that exploits unique ambipolar transport and programmable Dirac voltage in ultrathin MoTe2 field-effect transistors to achieve ASK, FSK, and PSK modulation. Furthermore, by integrating two programmed MoTe2 field-effect transistors, multibit data modulation is demonstrated, which improves the bandwidth efficiency by 200%. Finally, a frequency quadrupler is also realized exploiting the unique "double-well" transfer characteristic.
Collapse
Affiliation(s)
- Sarbashis Das
- Electrical Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Saptarshi Das
- Electrical Engineering, Pennsylvania State University, University Park, PA, 16802, USA
- Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
- Material Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| |
Collapse
|
7
|
Zhou R, Wu S, Cui H, Li P, Wu T. First-principles investigation of Pt-doped MoTe2 for detecting characteristic air decomposition components in air insulation switchgear. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113796] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
|