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Yu Y, Xiong T, Zhou Z, Liu D, Liu YY, Yang J, Wei Z. Spectrum-Dependent Image Convolutional Processing via a Two-Dimensional Polarization-Sensitive Photodetector. NANO LETTERS 2024; 24:6788-6796. [PMID: 38781093 DOI: 10.1021/acs.nanolett.4c01543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Currently, the improvement in the processing capacity of traditional processors considerably lags behind the demands of real-time image processing caused by the advancement of photodetectors and the widespread deployment of high-definition image sensors. Therefore, achieving real-time image processing at the sensor level has become a prominent research domain in the field of photodetector technology. This goal underscores the need for photodetectors with enhanced multifunctional integration capabilities than can perform real-time computations using optical or electrical signals. In this study, we employ an innovative p-type semiconductor GaTe0.5Se0.5 to construct a polarization-sensitive wide-spectral photodetector. Leveraging the wide-spectral photoresponse, we realize three-band imaging within a wavelength range of 390-810 nm. Furthermore, real-time image convolutional processing is enabled by configuring appropriate convolution kernels based on the polarization-sensitive photocurrents. The innovative design of the polarization-sensitive wide-spectral GaTe0.5Se0.5-based photodetector represents a notable contribution to the domain of real-time image perception and processing.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Duanyang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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2
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Zhou N, Dang Z, Li H, Sun Z, Deng S, Li J, Li X, Bai X, Xie Y, Li L, Zhai T. Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400311. [PMID: 38804863 DOI: 10.1002/smll.202400311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Revised: 03/23/2024] [Indexed: 05/29/2024]
Abstract
Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.
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Affiliation(s)
- Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Ziwei Dang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Haoran Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shijie Deng
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Junhao Li
- Institute of Information Sensing, Xidian University, Xi'an, 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Xiaoxia Bai
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Yong Xie
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
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3
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Zheng T, Pan Y, Yang M, Li Z, Zheng Z, Li L, Sun Y, He Y, Wang Q, Cao T, Huo N, Chen Z, Gao W, Xu H, Li J. 2D Free-Standing GeS 1-xSe x with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313721. [PMID: 38669677 DOI: 10.1002/adma.202313721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 03/30/2024] [Indexed: 04/28/2024]
Abstract
Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhongming Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yingbo He
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Quanhao Wang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Tangbiao Cao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zuxin Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Hua Xu
- School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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4
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Yang S, Jiao S, Nie Y, Zhao Y, Gao S, Wang D, Wang J. A high-performance and self-powered polarization-sensitive photoelectrochemical-type Bi 2O 2Te photodetector based on a quasi-solid-state gel electrolyte. MATERIALS HORIZONS 2024; 11:1710-1718. [PMID: 38275080 DOI: 10.1039/d3mh01882b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Among the two-dimensional (2D) Bi2O2X (X = S, Se, and Te) series, Bi2O2Te has the smallest effective mass and the highest carrier mobility. However, Bi2O2Te has rarely been investigated, most likely due to the lack of feasible methods to synthesize 2D Bi2O2Te. Herein, 2D Bi2O2Te nanosheets are successfully synthesized by low-temperature oxidation of Bi2Te3 nanosheets synthesized using a solvothermal method. The performance of a quasi-solid-state photoelectrochemical-type (PEC-type) photodetector based on 2D Bi2O2Te nanosheets is systematically investigated. Remarkably, the device has a high responsivity of 20.5 mA W-1 (zero bias) and fast rise/fall times of 6/90 ms under 365 nm illumination, which is superior to the majority of PEC-type photodetectors based on bismuth-based compounds. More importantly, due to the strong anisotropy of 2D Bi2O2Te nanosheets, the device achieves a dichroic ratio as high as 52, which belongs to the state-of-the-art polarized photodetectors. Besides, the capacity of 2D Bi2O2Te for high-resolution polarization imaging is demonstrated. This work provides a promising strategy for the synthesis of 2D Bi2O2Te nanosheets to fabricate a high-performance and polarization-sensitive photodetector.
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Affiliation(s)
- Song Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Shujie Jiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Yiyin Nie
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Yue Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Shiyong Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Dongbo Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
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5
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Li P, Li D, Xu Y, Liang C, Zeng XC. Group III (In/Ga)-V (P/As)-VI (S/Se) Monolayers: A New Class of Auxetic Semiconductors with Highly Anisotropic Electronic/Optical/Mechanical/Thermal Properties. J Phys Chem Lett 2024; 15:3043-3054. [PMID: 38466223 DOI: 10.1021/acs.jpclett.4c00156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/12/2024]
Abstract
We present a theoretical design of a class of 2D semiconducting materials, namely, group III (In/Ga)-V (P/As)-VI (S/Se) monolayers, whose global-minimum structures are predicted based on the particle swarm optimization method. Electronic structure calculations suggest that all group III-V-VI monolayers exhibit quasi-direct semiconducting characteristics with desirable band gaps ranging from 1.76 to 2.86 eV (HSE06 functional). Moreover, most group III-V-VI monolayers possess highly anisotropic carrier mobilities with large anisotropic ratios (3.4-6 for electrons, 2.2-25 for holes). G0W0+BSE calculations suggest that these monolayers show high optical anisotropy and relatively large exciton binding energies (0.33-0.75 eV), comparable to that (0.5 eV) of MoS2 monolayer. In particular, the GaPS monolayer manifests strikingly anisotropic I-V curves with a large ON/OFF ratio of ∼105 (106 for the GaPS bilayer) and anisotropic lattice thermal conductivity. Furthermore, the GaPS monolayer is predicted to exhibit both in-plane and out-of-plane negative Poisson ratios (NPRs) and prominent anisotropic Young moduli.
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Affiliation(s)
- Pengfei Li
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Daqing Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China
| | - Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China
| | - Changhao Liang
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Xiao Cheng Zeng
- Department of Materials Science & Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong
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6
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Dai X, Qiu C, Bi X, Sui C, Chen P, Qin F, Yuan H. Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13980-13988. [PMID: 38446715 DOI: 10.1021/acsami.3c19091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
The anisotropic thermal transport properties of low-symmetry two-dimensional materials play an important role in understanding heat dissipation and optimizing thermal management in integrated devices. Examples of efficient energy dissipation and enhanced power sustainability have been demonstrated in nanodevices based on materials with anisotropic thermal transport properties. However, the exploration of materials with high thermal conductivity and strong in-plane anisotropy remains challenging. Herein, we demonstrate the observation of anisotropic in-plane thermal conductivities of few-layer SiP2 based on the micro-Raman thermometry method. For suspended SiP2 nanoflake, the thermal conductivity parallel to P-P chain direction (κ∥b) can reach 131 W m-1 K-1 and perpendicular to P-P chain direction (κ⊥b) is 89 W m-1 K-1 at room temperature, resulting in a significant anisotropic ratio (κ∥b/κ⊥b) of 1.47. Note that such a large anisotropic ratio mainly results from the higher phonon group velocity along the P-P chain direction. We also found that the thermal conductivity can be effectively modulated by increasing the SiP2 thickness, reaching a value as high as 202 W m-1 K-1 (120 W m-1 K-1) for κ∥b (κ⊥b) at 111 nm thickness, which is the highest among layered anisotropic phosphide materials. Notably, the anisotropic ratio always remains at a high level between 1.47 and 1.68, regardless of the variation of SiP2 thickness. Our observation provides a new platform to verify the fundamental theory of thermal transport and a crucial guidance for designing efficient thermal management schemes of anisotropic electronic devices.
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Affiliation(s)
- Xueting Dai
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Chengqi Sui
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
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Chen W, Chen A, Zhang R, Zeng J, Zhang L, Gu M, Wang C, Huang M, Guo Y, Duan H, Hu C, Shen W, Niu B, Watanabe K, Taniguchi T, Zhang J, Li J, Cai X, Liu G. Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus. NANO LETTERS 2023. [PMID: 38050812 DOI: 10.1021/acs.nanolett.3c02951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications.
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Affiliation(s)
- Weilin Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - An Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Ruan Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Jianmin Zeng
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Lihui Zhang
- Xi'an Thermal Power Research Institute Co., Ltd., Xi'an 710054, People's Republic of China
| | - Mengyue Gu
- School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Chaofan Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
| | - Yanbo Guo
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Hongxiao Duan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China
| | - Baoxin Niu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jinying Zhang
- School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Jinjin Li
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Xinghan Cai
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Gang Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
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8
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Hou Y, Ren K, Wei Y, Yang D, Cui Z, Wang K. Anisotropic Mechanical Properties of Orthorhombic SiP 2 Monolayer: A First-Principles Study. Molecules 2023; 28:6514. [PMID: 37764290 PMCID: PMC10535868 DOI: 10.3390/molecules28186514] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Revised: 09/04/2023] [Accepted: 09/06/2023] [Indexed: 09/29/2023] Open
Abstract
In recent years, the two-dimensional (2D) orthorhombic SiP2 flake has been peeled off successfully by micromechanical exfoliation and it exhibits an excellent performance in photodetection. In this paper, we investigated the mechanical properties and the origin of its anisotropy in an orthorhombic SiP2 monolayer through first-principles calculations, which can provide a theoretical basis for utilizing and tailoring the physical properties of a 2D orthorhombic SiP2 in the future. We found that the Young's modulus is up to 113.36 N/m along the a direction, while the smallest value is only 17.46 N/m in the b direction. The in-plane anisotropic ratio is calculated as 6.49, while a similar anisotropic ratio (~6.55) can also be observed in Poisson's ratio. Meanwhile, the in-plane anisotropic ratio for the fracture stress of the orthorhombic SiP2 monolayer is up to 9.2. These in-plane anisotropic ratios are much larger than in black phosphorus, ReS2, and biphenylene. To explain the origin of strong in-plane anisotropy, the interatomic force constants were obtained using the finite-displacement method. It was found that the maximum of interatomic force constant along the a direction is 5.79 times of that in the b direction, which should be considered as the main origin of the in-plane anisotropy in the orthorhombic SiP2 monolayer. In addition, we also found some negative Poisson's ratios in certain specific orientations, allowing the orthorhombic SiP2 monolayer to be applied in next-generation nanomechanics and nanoelectronics.
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Affiliation(s)
- Yinlong Hou
- School of Automation, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
| | - Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210042, China
| | - Yu Wei
- School of Automation, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
| | - Dan Yang
- School of Automation, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
| | - Zhen Cui
- School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China
| | - Ke Wang
- School of Automation, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
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9
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Yi H, Ma C, Wang W, Liang H, Cui R, Cao W, Yang H, Ma Y, Huang W, Zheng Z, Zou Y, Deng Z, Yao J, Yang G. Quantum tailoring for polarization-discriminating Bi 2S 3 nanowire photodetectors and their multiplexing optical communication and imaging applications. MATERIALS HORIZONS 2023; 10:3369-3381. [PMID: 37404203 DOI: 10.1039/d3mh00733b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.
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Affiliation(s)
- Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, Guangdong, P. R. China
| | - Wan Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Huanrong Liang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Rui Cui
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Weiwei Cao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Hailin Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Yuhang Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Wenjing Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Yichao Zou
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Zexiang Deng
- School of Science, Guilin University of Aerospace Technology, Guilin 541004, Guangxi, P. R. China.
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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10
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Ye K, Yan J, Liu L, Li P, Yu Z, Gao Y, Yang M, Huang H, Nie A, Shu Y, Xiang J, Wang S, Liu Z. Broadband Polarization-Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300246. [PMID: 37013460 DOI: 10.1002/smll.202300246] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 02/27/2023] [Indexed: 06/19/2023]
Abstract
2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization-sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting α-MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of α-MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the α-MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV-to-NIR wavelengths. These results demonstrate that 2D magnetic semiconducting α-MnTe nanoribbons provide a promising platform to design the next-generation polarization-sensitive photodetectors in a broadband range.
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Affiliation(s)
- Kun Ye
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Junxin Yan
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Lixuan Liu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, P. R. China
| | - Penghui Li
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Zhipeng Yu
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Yang Gao
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Mengmeng Yang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
| | - He Huang
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Anmin Nie
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Yu Shu
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Jianyong Xiang
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Zhongyuan Liu
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
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11
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Wang Z, Wei L, Wang S, Wu T, Sun L, Ma C, Tao X, Wang S. 2D SiP 2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15810-15818. [PMID: 36939047 DOI: 10.1021/acsami.2c19803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP2/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP2/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 1013 Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP2-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP2 phototransistors for ultrasensitive optoelectronic applications.
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Affiliation(s)
- Ziming Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Limei Wei
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Tiange Wu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Lanjing Sun
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Chao Ma
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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12
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Xu Z, Dong X, Wang L, Wu H, Liu Y, Luo J, Hong M, Li L. Precisely Tailoring a FAPbI 3-Derived Ferroelectric for Sensitive Self-Driven Broad-Spectrum Polarized Photodetection. J Am Chem Soc 2023; 145:1524-1529. [PMID: 36629502 DOI: 10.1021/jacs.2c12300] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Benefiting from superior semiconducting properties and the angle-dependence of the bulk photovoltaic effect (BPVE) on polarized light, the two-dimensional (2D) hybrid perovskite ferroelectrics are developed for sensitive self-powered polarized photodetection. Most of the currently reported ferroelectric-driven polarized photodetection is restricted to the shortwave optical response, and expanding the response range is urgently needed. Here we report the first instance of a FAPbI3-derived (2D) perovskite ferroelectric, (BA)2(FA)Pb2I7 (1, BA is n-butylammonium, FA is formamidinium). It exhibited a notably high thermostability and broad-spectrum adsorption extending to around 650 nm. Significantly, 1 demonstrated ferroelectricity-driven self-powered polarized photodetection under 637 nm with an anisotropic photocurrent ratio of ∼1.96, ultrahigh detectivity of 3.34 × 1012 Jones, and long-term repetition. This research will shed light on the development of new ferroelectrics for potential application in broad-spectrum polarization-based optoelectronics.
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Affiliation(s)
- Zhijin Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xin Dong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Lei Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Huajie Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Maochun Hong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
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13
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Wang S, Yang Z, Wang D, Tan C, Yang L, Wang Z. Strong Anisotropic Two-Dimensional In 2Se 3 for Light Intensity and Polarization Dual-Mode High-Performance Detection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3357-3364. [PMID: 36599121 DOI: 10.1021/acsami.2c19660] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Detecting the light from different freedom is of great significance to gain more information. Two-dimensional (2D) materials with low intrinsic carrier concentration and highly tunable electronic structure have been considered as the promising candidate for future room-temperature multi-functional photodetectors. However, current investigations mainly focus on intensity-sensitive detection; the multi-dimensional photodetection such as polarization-sensitive photodetection is still in its early stage. Herein, the intensity- and polarization-sensitive photodetection based on α-In2Se3 is studied. By using angle-resolved polarized Raman spectroscopy, it is demonstrated that α-In2Se3 shows an anisotropic phonon vibration property indicating its asymmetric structure. The α-In2Se3-based photodetector has a photoelectric performance with a responsivity of 1936 A/W and a specific detectivity of 2.1 × 1013 Jones under 0.2 mW/cm2 power density at 400 nm. Moreover, by studying the polarized angle-resolved photoelectrical effect, it is found that the ratio of maximum and minimum photocurrent (dichroic ratio) reaches 1.47 at 650 nm suggesting good polarization-sensitive detection. After post-annealing, α-In2Se3 in situ converts to β-In2Se3 which has similar in-plane anisotropic crystallinity and exhibits a dichroic ratio of 1.41. It is found that the responsivity of β-In2Se3 is 6 A/W, much lower than that of α-In2Se3. The high-performance light intensity- and polarization-detection of α-In2Se3 enlarges the 2D anisotropic materials family and provides new opportunities for future dual-mode photodetection.
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Affiliation(s)
- Shaoyuan Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Zhihao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Dong Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu610065, China
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14
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Jiang S, Wang G, Deng H, Liu K, Yang Q, Zhao E, Zhu L, Guo W, Yang J, Zhang C, Wang H, Zhang X, Dai JF, Luo G, Zhao Y, Lin J. General Synthesis of 2D Magnetic Transition Metal Dihalides via Trihalide Reduction. ACS NANO 2023; 17:363-371. [PMID: 36576433 DOI: 10.1021/acsnano.2c08693] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dihalides (TMDHs) have been receiving extensive attention due to their diversified magnetic properties and promising applications in spintronics. However, controlled growth of 2D TMDHs remains challenging owing to their extreme sensitivity to atmospheric moisture. Herein, using a home-built nitrogen-filled interconnected glovebox system, a universal chemical vapor deposition synthesis route of high-quality 2D TMDH flakes (1T-FeCl2, FeBr2, VCl2, and VBr2) by reduction of their trihalide counterparts is developed. Representatively, ultrathin (∼8.6 nm) FeCl2 flakes are synthesized on SiO2/Si, while on graphene/Cu foil the thickness can be down to monolayer (1L). Reflective magnetic circular dichroism spectroscopy shows an interlayer antiferromagnetic ordering of FeCl2 with a Neel temperature at ∼17 K. Scanning tunneling microscopy and spectroscopy further identify the atomic-scale structures and band features of 1L and bilayer FeCl2 on graphene/Cu foil.
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Affiliation(s)
- Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Hanbing Deng
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
| | - Kai Liu
- Department of Materials Science and Engineering and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen518055, China
| | - Qishuo Yang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Erding Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Liang Zhu
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Weiteng Guo
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Jing Yang
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
| | - Cheng Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Heshen Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Xi Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen518055, China
| | - Guangfu Luo
- Department of Materials Science and Engineering and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen518055, China
| | - Yue Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen518055, China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen518055, China
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15
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Gao Y, Liao J, Chen H, Ning H, Wu Q, Li Z, Wang Z, Zhang X, Shao M, Yu Y. High Performance Polarization-Resolved Photodetectors Based on Intrinsically Stretchable Organic Semiconductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204727. [PMID: 36398626 PMCID: PMC9839839 DOI: 10.1002/advs.202204727] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Revised: 11/02/2022] [Indexed: 06/16/2023]
Abstract
Polarization-sensitive photodetectors based on anisotropic semiconductors sense both the intensity and polarization state information without extra optical components. Here, a self-powered organic photodetector (OPD) composed of intrinsically stretchable polymer donor PNTB6-Cl and non-fullerene acceptor Y6 is reported. The PNTB6-Cl:Y6 photoactive film accommodates a remarkable 100% strain without fracture, exhibiting a high optical anisotropy of 1.8 after strain alignment. The resulting OPD not only shows an impressive faint-light detection capability (high spectral responsivity of 0.45 A W-1 and high specific detectivity of 1012 Jones), but also has a high anisotropic responsivity ratio of 1.42 under the illumination of parallel and traversed polarized light. To the best of the authors' knowledge, both the detector performance and polarization features are among the best-performing OPDs and polarization-sensitive photodetectors. As a proof-of-concept, polarization-sensitive OPDs are also utilized to set up a polarimetric imaging system and full-Stokes polarimeter. This work explores the potential of highly stretchable organic semiconductors for state-of-art polarization imaging and spectroscopy applications.
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Affiliation(s)
- Yerun Gao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jiawen Liao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haoyu Chen
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haijun Ning
- Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of GuangdongShantou UniversityGuangdong515063P. R. China
| | - Qinghe Wu
- Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of GuangdongShantou UniversityGuangdong515063P. R. China
| | - Zhilin Li
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Zhenye Wang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xinliang Zhang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Ming Shao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yu Yu
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
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16
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Ye Q, Xu D, Cai B, Lu J, Yi H, Ma C, Zheng Z, Yao J, Ouyang G, Yang G. High-performance hierarchical O-SnS/I-ZnIn 2S 4 photodetectors by leveraging the synergy of optical regulation and band tailoring. MATERIALS HORIZONS 2022; 9:2364-2375. [PMID: 35876307 DOI: 10.1039/d2mh00612j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Low light absorption and limited carrier lifetime are critical obstacles inhibiting further performance improvement of 2D layered material (2DLM) based photodetectors, while scalable fabrication is an ongoing challenge prior to commercialization from the lab to market. Herein, wafer-scale SnS/ZIS hierarchical nanofilms, where out-of-plane SnS (O-SnS) is modified onto in-plane ZIS (I-ZIS), have been achieved by pulsed-laser deposition. The derived O-SnS/I-ZIS photodetector exhibits markedly boosted sensitivity as compared to a pristine ZIS device. The synergy of multiple functionalities contributes to the dramatic improvement, including the pronounced light-trapping effect of O-SnS by multiple scattering, the high-efficiency spatial separation of photogenerated electron-hole pairs by a type-II staggered band alignment and the promoted carrier transport enabled by the tailored electronic structure of ZIS. Of note, the unique architecture of O-SnS/I-ZIS can considerably expedite the carrier dynamics, where O-SnS promotes the electron transfer from SnS to ZIS whilst the I-ZIS enables high-speed electron circulation. In addition, the interlayer transition enables the bridging of the effective optical window to telecommunication wavelengths. Moreover, monolithic integration of arrayed devices with satisfactory device-to-device variability has been encompassed and a proof-of-concept imaging application is demonstrated. On the whole, this study depicts a fascinating functional coupling architecture toward implementing chip-scale integrated optoelectronics.
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Affiliation(s)
- Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
| | - Degao Xu
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Biao Cai
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
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17
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Fortin-Deschênes M, Xia F. A tale of two dimensionalities. NATURE MATERIALS 2022; 21:735-736. [PMID: 35768598 DOI: 10.1038/s41563-022-01306-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Affiliation(s)
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT, USA.
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18
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Zou C, Liu Q, Chen K, Chen F, Zhao Z, Cao Y, Deng C, Wang X, Li X, Zhan S, Gao F, Li S. A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu 2I 3/GaN heterostructure. MATERIALS HORIZONS 2022; 9:1479-1488. [PMID: 35262131 DOI: 10.1039/d1mh02073k] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu2I3 dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu2I3/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.
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Affiliation(s)
- Can Zou
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Qing Liu
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Kai Chen
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Fei Chen
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Zixuan Zhao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Yunxuan Cao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Congcong Deng
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Xingfu Wang
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Xiaohang Li
- King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia
| | - Shaobin Zhan
- Shenzhen Institute of Information Technology, Innovation and Entrepreneurship School, Shenzhen, 518172, P. R. China.
| | - Fangliang Gao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Shuti Li
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
- 21C Innovation Laboratory, Contemporary Amperex Technology Ltd, Ningde, Fujian, 352100, P. R. China.
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