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Song H, Ji S, Kang SG, Shin N. Contact Geometry-Dependent Excitonic Emission in Mixed-Dimensional van der Waals Heterostructures. ACS NANO 2024; 18:19179-19189. [PMID: 38990759 PMCID: PMC11271179 DOI: 10.1021/acsnano.4c04770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 07/03/2024] [Accepted: 07/05/2024] [Indexed: 07/13/2024]
Abstract
Manipulation of excitonic emission in two-dimensional (2D) materials via the assembly of van der Waals (vdW) heterostructures unlocks numerous opportunities for engineering their photonic and optoelectronic properties. In this work, we introduce a category of mixed-dimensional vdW heterostructures, integrating 2D materials with one-dimensional (1D) semiconductor nanowires composed of vdW layers. This configuration induces spatially distinct localized excitonic emissions through a tailored interfacial heterolayer atomic arrangement. By precisely adjusting both the axial and sidewall facet orientations of bottom-up grown PbI2 vdW nanowires and by transferring them onto 1L WSe2 flakes, we establish vdW heterointerfaces with either perpendicular or parallel interatomic arrangements. The edge-standing heterojunction, featuring perpendicular PbI2 layers atop WSe2, promotes efficient charge transfer through the edges and coupled localized states, leading to an enhanced redshifted excitonic emission. Conversely, the layer-by-layer heterointerface, where PbI2 layers are in parallel contact with WSe2, exhibits substantial quenching due to deep midgap states in a type-II alignment, as evidenced by power-dependent measurements and first-principle calculations. Our results introduce a method for actively manipulating excitonic emissions in 2D transition metal dichalcogenides (TMDs) through edge engineering, highlighting their potential in the development of various quantum devices.
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Affiliation(s)
- Hyukjin Song
- Department
of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Sumin Ji
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Biomedical Science and Engineering, Inha
University, Incheon 22212, Republic of Korea
| | - Sung Gu Kang
- School
of Chemical Engineering, University of Ulsan, Ulsan 680-749, Republic of Korea
| | - Naechul Shin
- Department
of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Biomedical Science and Engineering, Inha
University, Incheon 22212, Republic of Korea
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2
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Xu Y, Li D, Sun H, Xu H, Li P. Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs. Phys Chem Chem Phys 2024; 26:4284-4297. [PMID: 38231547 DOI: 10.1039/d3cp05327j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
In this study, we have investigated the electron mobility of monolayered (ML) tetrahex-GeC2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2 (V s)-1, exceeding the 400 cm2 (V s)-1 of MoS2 which was calculated using the same method and measured experimentally. The ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs, including gate lengths (Lg) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (Ion) can meet the requirements of similar nodes in the ITRS 2013. In particular, the Ion is more remarkable for HP applications than that of the extensively studied MoS2. For LP applications, the Ion values at Lg of 7 and 9 nm surpass those of arsenene, known for having the largest Ion among 2D semiconductors. Subthreshold swings (SSs) as low as 69/53 mV dec-1 at an Lg of 9 nm were observed for HP/LP applications, and 73 mV dec-1 at an Lg of 5 nm for LP applications, indicating the excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg values of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.
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Affiliation(s)
- Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Daqing Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - He Sun
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Haowen Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Pengfei Li
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
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3
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Li Y, Tan J, Wang M, Jia Q, Zhang S, Wang M, Zhang Z. A dual-photoelectrode fuel cell-driven self-powered aptasensor based on the 1D/2D In 2S 3/MoS 2@Fe-CNTs heterojunction for the ultrasensitive detection of Staphylococcus aureus. Anal Chim Acta 2023; 1272:341473. [PMID: 37355319 DOI: 10.1016/j.aca.2023.341473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Revised: 05/20/2023] [Accepted: 06/02/2023] [Indexed: 06/26/2023]
Abstract
A novel dual-electrode photo-fuel cell (PFC)-driven self-powered aptasensor was manufactured for the sensitive and selective detection of Staphylococcus aureus (S. aureus) using the one-dimensional (1D)/2D Schottky heterojunction comprising bimetallic indium/molybdenum sulfide nanosheets and iron-doped carbon nanotube (Fe-CNT) (denoted as In2S3/MoS2@Fe-CNTs) as the photocathode. Given the generation of a robust interface at In2S3/MoS2 and Fe-CNTs, the charge separation and transfer ability of photoexcited electron-hole pairs were enforced, thus improving the output voltage of the assembled PFC. In addition, the numerous active sites of the 1D/2D In2S3/MoS2@Fe-CNTs Schottky heterojunction enabled the immobilization of large amounts of aptamer. Accordingly, the proposed PFC-driven self-powered aptasensor exhibited a wide linear range in 10-1 × 107 CFU mL-1 with a detection limit of 1.2 CFU mL-1 toward S. aureus. High selectivity, excellent reproducibility, good stability, and acceptable regenerability, as well as great potential practicality, were also achieved for the detection of S. aureus using the developed PFC-driven self-powered aptasensor. This work not only provides a new photoactive material based on a robust 1D/2D Schottky heterojunction, but also constructs a novel PFC-based self-powered aptasensing strategy based on dual-photoelectrodes and with satisfactory performance for the detection of foodborne pathogens in diverse environments.
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Affiliation(s)
- Yu Li
- Department of Orthopaedic Surgery, The First Affiliated Hospital of Zhengzhou University, Zhengzhou, 450000, Henan, PR China.
| | - Jun Tan
- Department of Orthopaedic Surgery, The First Affiliated Hospital of Zhengzhou University, Zhengzhou, 450000, Henan, PR China
| | - Mengfei Wang
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450001, PR China
| | - Qiaojuan Jia
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450001, PR China
| | - Shuai Zhang
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450001, PR China
| | - Minghua Wang
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450001, PR China
| | - Zhihong Zhang
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450001, PR China
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Fu N, Zhang J, He Y, Lv X, Guo S, Wang X, Zhao B, Chen G, Wang L. High-Sensitivity 2D MoS 2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector. SENSORS (BASEL, SWITZERLAND) 2023; 23:3104. [PMID: 36991815 PMCID: PMC10056868 DOI: 10.3390/s23063104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/10/2023] [Accepted: 03/13/2023] [Indexed: 06/19/2023]
Abstract
A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS2 was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS2, broadband detection from visible to near-infrared (520-1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 103 A/W (λ = 520 nm, Vds = 1 V) and 718 A/W (λ = 1060 nm, Vds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 1010 Jones (λ = 520 nm) and 1.5 × 109 Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 105% (λ = 520 nm) and 8.41 × 104% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials.
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Affiliation(s)
- Nanxin Fu
- School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Jiazhen Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yuan He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xuyang Lv
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shuguang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Bin Zhao
- School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Gang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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5
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Ding EX, Liu P, Yoon HH, Ahmed F, Du M, Shafi AM, Mehmood N, Kauppinen EI, Sun Z, Lipsanen H. Highly Sensitive MoS 2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4216-4225. [PMID: 36635093 PMCID: PMC9880956 DOI: 10.1021/acsami.2c19917] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.
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Affiliation(s)
- Er-Xiong Ding
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Peng Liu
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Mingde Du
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Naveed Mehmood
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Esko I. Kauppinen
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
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Li X, Wei Y, Wang Z, Kong Y, Su Y, Lu G, Mei Z, Su Y, Zhang G, Xiao J, Liang L, Li J, Li Q, Zhang J, Fan S, Zhang Y. One-dimensional semimetal contacts to two-dimensional semiconductors. Nat Commun 2023; 14:111. [PMID: 36611034 PMCID: PMC9825564 DOI: 10.1038/s41467-022-35760-x] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 12/23/2022] [Indexed: 01/09/2023] Open
Abstract
Two-dimensional (2D) semiconductors are promising in channel length scaling of field-effect transistors (FETs) due to their excellent gate electrostatics. However, scaling of their contact length still remains a significant challenge because of the sharply raised contact resistance and the deteriorated metal conductivity at nanoscale. Here, we construct a 1D semimetal-2D semiconductor contact by employing single-walled carbon nanotube electrodes, which can push the contact length into the sub-2 nm region. Such 1D-2D heterostructures exhibit smaller van der Waals gaps than the 2D-2D ones, while the Schottky barrier height can be effectively tuned via gate potential to achieve Ohmic contact. We propose a longitudinal transmission line model for analyzing the potential and current distribution of devices in short contact limit, and use it to extract the 1D-2D contact resistivity which is as low as 10-6 Ω·cm2 for the ultra-short contacts. We further demonstrate that the semimetal nanotubes with gate-tunable work function could form good contacts to various 2D semiconductors including MoS2, WS2 and WSe2. The study on 1D semimetal contact provides a basis for further miniaturization of nanoelectronics in the future.
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Affiliation(s)
- Xuanzhang Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Yang Wei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China.
| | - Zhijie Wang
- Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Ya Kong
- College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yipeng Su
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Gaotian Lu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Zhen Mei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Yi Su
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Guangqi Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Jianhua Xiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Liang Liang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Jia Li
- Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Jin Zhang
- College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China
| | - Yuegang Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China.
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