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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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2
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Hwang J, Joh H, Kim C, Ahn J, Jeon S. Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2467-2476. [PMID: 38175955 DOI: 10.1021/acsami.3c13945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
Neuromorphic computing, which mimics the structure and principles of the human brain, has the potential to facilitate the hardware implementation of next-generation artificial intelligence systems and process large amounts of data with very low power consumption. Among them, the XNOR synapse-based Binary Neural Network (BNN) has been attracting attention due to its compact neural network parameter size and low hardware cost. The previous XNOR synapse has drawbacks, such as a trade-off between cell density and accuracy. In this work, we show nonvolatile XNOR synapses with high density and accuracy using a monolithically stacked complementary ferroelectric field-effect transistor (C-FeFET) composed of a p-type Si MFMIS-FeFET at the bottom and a 3D stackable n-type Al:IZTO MFS-FeTFT, achieving 60F2 per cell (2C-FeFET). For adjusting the threshold voltage and improving the switching speed (100 ns) of n-type ferroelectric TFT, we employed a dual-gate configuration and a unique operation scheme, making it comparable to those of Si-based FeFETs. We performed array-level simulation with a 512 × 512 subarray size and a 3-bit flash ADC, demonstrating that the image recognition accuracies using the MNIST and CIFAR-10 data sets were increased by 3.17 and 14.07%, respectively, in comparison to other nonvolatile XNOR synapses. In addition, we performed system-level analysis on a 512 × 512 XNOR C-FeFET, exhibiting an outstanding throughput of 717.37 GOPS and an energy efficiency of 196.7 TOPS/W. We expect that our approach would contribute to the high-density memory systems, logic-in-memory technology, and hardware implementation of neural networks.
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Affiliation(s)
- Junghyeon Hwang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
| | - Hongrae Joh
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
| | - Chaeheon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
| | - Jinho Ahn
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seonhdong-gu, Seoul 04763, Korea
| | - Sanghun Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
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3
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Pang Y, Zhou Y, Tong L, Xu J. 2D Dual Gate Field-Effect Transistor Enabled Versatile Functions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304173. [PMID: 37705128 DOI: 10.1002/smll.202304173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 08/28/2023] [Indexed: 09/15/2023]
Abstract
Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS2 ) asymmetric-dual-gate field-effect transistor (ADGFET) with an In2 Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec-1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W-1 , benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.
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Affiliation(s)
- Yue Pang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
| | - Lei Tong
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
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Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
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Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
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5
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Dai Q, Pei M, Guo J, Wang Q, Hao Z, Wang H, Li Y, Li L, Lu K, Yan Y, Shi Y, Li Y. Integration of image preprocessing and recognition functions in an optoelectronic coupling organic ferroelectric retinomorphic neuristor. MATERIALS HORIZONS 2023; 10:3061-3071. [PMID: 37218409 DOI: 10.1039/d3mh00429e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The human visual system (HVS) has the advantages of a low power consumption and high efficiency because of the synchronous perception and early preprocessing of external image information in the retina, as well as parallel in-memory computing within the visual cortex. Realizing the biofunction simulation of the retina and visual cortex in a single device structure provides opportunities for performance improvements and machine vision system (MVS) integration. Here, we fabricate organic ferroelectric retinomorphic neuristors that integrate the retina-like preprocessing function and recognition of the visual cortex in a single device architecture. Benefiting from the electrical/optical coupling modulation of ferroelectric polarization, our devices show a bidirectional photoresponse that acts as the basis for mimicking retinal preconditioning and multi-level memory capabilities for recognition. The MVS based on the proposed retinomorphic neuristors achieves a high recognition accuracy of ∼90%, which is 20% higher than that of the incomplete system without the preprocessing function. In addition, we successfully demonstrate image encryption and optical programming logic gate functions. Our work suggests that the proposed retinomorphic neuristors offer great potential for MVS monolithic integration and functional expansion.
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Affiliation(s)
- Qinyong Dai
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Jianhang Guo
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Qijing Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Ziqian Hao
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Hengyuan Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yating Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Longfei Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Kuakua Lu
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yang Yan
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
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6
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Sheng Z, Dong J, Hu W, Wang Y, Sun H, Zhang DW, Zhou P, Zhang Z. Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor. NANO LETTERS 2023. [PMID: 37235483 DOI: 10.1021/acs.nanolett.3c01248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore's law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due to the controllable polarity by the control gate, floating gate, and drain voltages. Such electrical tunable characteristics are employed for logic-in-memory architectures and can behave as reconfigurable logic functions of AND/XNOR within a single device. Compared to the conventional devices like floating-gate field-effect transistors, our design can greatly decrease the consumption of transistors. For AND/NAND, it can save 75% transistors by reducing the transistor number from 4 to 1; for XNOR/XOR, it is even up to 87.5% with the number being reduced from 8 to 1.
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Affiliation(s)
- Zhe Sheng
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jianguo Dong
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wennan Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yue Wang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haoran Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Peng Zhou
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Zengxing Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
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7
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Kim KH, Karpov I, Olsson RH, Jariwala D. Wurtzite and fluorite ferroelectric materials for electronic memory. NATURE NANOTECHNOLOGY 2023; 18:422-441. [PMID: 37106053 DOI: 10.1038/s41565-023-01361-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Accepted: 02/24/2023] [Indexed: 05/21/2023]
Abstract
Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited. Recent advances in ferroelectric materials with wurtzite and fluorite structure have renewed enthusiasm and offered new opportunities for their deployment in commercial-scale devices in microelectronics hardware. This Review focuses on the most recent and emerging wurtzite-structured ferroelectric materials and emphasizes their applications in memory and storage-based microelectronic hardware. Relevant comparisons with existing fluorite-structured ferroelectric materials are made and a detailed outlook on ferroelectric materials and devices applications is provided.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Ilya Karpov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - Roy H Olsson
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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Bian Z, Miao J, Zhang T, Chen H, Zhu Q, Chai J, Tian F, Wu S, Xu Y, Yu B, Chai Y, Zhao Y. Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206791. [PMID: 37010037 DOI: 10.1002/smll.202206791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 03/05/2023] [Indexed: 06/19/2023]
Abstract
2D materials with atomic thickness display strong gate controllability and emerge as promising materials to build area-efficient electronic circuits. However, achieving the effective and nondestructive modulation of carrier density/type in 2D materials is still challenging because the introduction of dopants will greatly degrade the carrier transport via Coulomb scattering. Here, a strategy to control the polarity of tungsten diselenide (WSe2 ) field-effect transistors (FETs) via introducing hexagonal boron nitride (h-BN) as the interfacial dielectric layer is devised. By modulating the h-BN thickness, the carrier type of WSe2 FETs has been switched from hole to electron. The ultrathin body of WSe2 , combined with the effective polarity control, together contribute to the versatile single-transistor logic gates, including NOR, AND, and XNOR gates, and the operation of only two transistors as a half adder in logic circuits. Compared with the use of 12 transistors based on static Si CMOS technology, the transistor number of the half adder is reduced by 83.3%. The unique carrier modulation approach has general applicability toward 2D logic gates and circuits for the improvement of area efficiency in logic computation.
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Affiliation(s)
- Zheng Bian
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Jialei Miao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Tianjiao Zhang
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Haohan Chen
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Qinghai Zhu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Jian Chai
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Feng Tian
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Shaoxiong Wu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Yuda Zhao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan, 430056, China
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Iqbal MA, Xie H, Qi L, Jiang WC, Zeng YJ. Recent Advances in Ferroelectric-Enhanced Low-Dimensional Optoelectronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205347. [PMID: 36634972 DOI: 10.1002/smll.202205347] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 11/20/2022] [Indexed: 06/17/2023]
Abstract
Ferroelectric (FE) materials, including BiFeO3 , P(VDF-TrFE), and CuInP2 S6 , are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low-dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state-of-the-art of FE-based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.
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Affiliation(s)
- Muhammad Ahsan Iqbal
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Haowei Xie
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Lu Qi
- Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen, 518118, P. R. China
| | - Wei-Chao Jiang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Jia Zeng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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10
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Liao J, Wen W, Wu J, Zhou Y, Hussain S, Hu H, Li J, Liaqat A, Zhu H, Jiao L, Zheng Q, Xie L. Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing. ACS NANO 2023; 17:6095-6102. [PMID: 36912657 DOI: 10.1021/acsnano.3c01198] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In-memory computing is a highly efficient approach for breaking the bottleneck of von Neumann architectures, i.e., reducing redundant latency and energy consumption during the data transfer between the physically separated memory and processing units. Herein we have designed a in-memory computing device, a van der Waals ferroelectric semiconductor (InSe) based metal-oxide-ferroelectric semiconductor field-effect transistor (MOfeS-FET). This MOfeS-FET integrates memory and logic functions in the same material, in which the out-of-plane (OOP) ferroelectric polarization in InSe is used for data storage and the semiconducting property is used for the logic computation. The MOfeS-FET shows a long retention time with high on/off ratios (>106), high program/erase (P/E) ratios (103), and stable cyclic endurance. Moreover, inverter, programmable NAND, and NOR Boolean logic operations with nonvolatile storage of the results have all been demonstrated using our approach. These findings highlight the potential of van der Waals ferroelectric semiconductor-based MOfeS-FETs in the in-memory computing and their potential of achieving size scaling beyond Moore's law.
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Affiliation(s)
- Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wen Wen
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Yaming Zhou
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Haowen Hu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Jiawei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Adeel Liaqat
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Hongwei Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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11
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Cho Y, Kim J, Kang M, Kim S. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO X/TaN Memristors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1687. [PMID: 36837316 PMCID: PMC9961236 DOI: 10.3390/ma16041687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Revised: 02/04/2023] [Accepted: 02/13/2023] [Indexed: 06/18/2023]
Abstract
In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.
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Affiliation(s)
- Youngboo Cho
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Jihyung Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Myounggon Kang
- Department of Electronics Engineering, Korea National University of Transportation, Chungju-si 27469, Republic of Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
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Tanim MMH, Templin Z, Zhao F. Natural Organic Materials Based Memristors and Transistors for Artificial Synaptic Devices in Sustainable Neuromorphic Computing Systems. MICROMACHINES 2023; 14:235. [PMID: 36837935 PMCID: PMC9963886 DOI: 10.3390/mi14020235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Revised: 01/15/2023] [Accepted: 01/16/2023] [Indexed: 06/18/2023]
Abstract
Natural organic materials such as protein and carbohydrates are abundant in nature, renewable, and biodegradable, desirable for the construction of artificial synaptic devices for emerging neuromorphic computing systems with energy efficient operation and environmentally friendly disposal. These artificial synaptic devices are based on memristors or transistors with the memristive layer or gate dielectric formed by natural organic materials. The fundamental requirement for these synaptic devices is the ability to mimic the memory and learning behaviors of biological synapses. This paper reviews the synaptic functions emulated by a variety of artificial synaptic devices based on natural organic materials and provides a useful guidance for testing and investigating more of such devices.
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Chien YC, Xiang H, Shi Y, Duong NT, Li S, Ang KW. A MoS 2 Hafnium Oxide Based Ferroelectric Encoder for Temporal-Efficient Spiking Neural Network. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204949. [PMID: 36366910 DOI: 10.1002/adma.202204949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 07/26/2022] [Indexed: 06/16/2023]
Abstract
Spiking neural network (SNN), where the information is evaluated recurrently through spikes, has manifested significant promises to minimize the energy expenditure in data-intensive machine learning and artificial intelligence. Among these applications, the artificial neural encoders are essential to convert the external stimuli to a spiking format that can be subsequently fed to the neural network. Here, a molybdenum disulfide (MoS2 ) hafnium oxide-based ferroelectric encoder is demonstrated for temporal-efficient information processing in SNN. The fast domain switching attribute associated with the polycrystalline nature of hafnium oxide-based ferroelectric material is exploited for spike encoding, rendering it suitable for realizing biomimetic encoders. Accordingly, a high-performance ferroelectric encoder is achieved, featuring a superior switching efficiency, negligible charge trapping effect, and robust ferroelectric response, which successfully enable a broad dynamic range. Furthermore, an SNN is simulated to verify the precision of the encoded information, in which an average inference accuracy of 95.14% can be achieved, using the Modified National Insitute of Standards and Technology (MNIST) dataset for digit classification. Moreover, this ferroelectric encoder manifests prominent resilience against noise injection with an overall prediction accuracy of 94.73% under various Gaussian noise levels, showing practical promises to reduce the computational load for the neural network.
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Affiliation(s)
- Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Heng Xiang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yufei Shi
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Ngoc Thanh Duong
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore, 138634, Singapore
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Nonvolatile Memories in Spiking Neural Network Architectures: Current and Emerging Trends. ELECTRONICS 2022. [DOI: 10.3390/electronics11101610] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
A sustainable computing scenario demands more energy-efficient processors. Neuromorphic systems mimic biological functions by employing spiking neural networks for achieving brain-like efficiency, speed, adaptability, and intelligence. Current trends in neuromorphic technologies address the challenges of investigating novel materials, systems, and architectures for enabling high-integration and extreme low-power brain-inspired computing. This review collects the most recent trends in exploiting the physical properties of nonvolatile memory technologies for implementing efficient in-memory and in-device computing with spike-based neuromorphic architectures.
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