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Wang L, Wu S, Zhang Z, Zhu J, Zou L, Xu B, Wu J, Zhu J, Xiao F, Jiao C, Pei S, Qin J, Zhou Y, Xia J, Wang Z. Investigating thermal properties of 2D non-layered material using a NEMS-based 2-DOF approach towards ultrahigh-performance bolometer. Natl Sci Rev 2024; 11:nwae248. [PMID: 39301065 PMCID: PMC11409892 DOI: 10.1093/nsr/nwae248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2023] [Revised: 04/15/2024] [Accepted: 05/13/2024] [Indexed: 09/22/2024] Open
Abstract
Two-dimensional (2D) non-layered materials in many aspects differ from their layered counterparts, and the exploration of their physical properties has produced many intriguing findings. However, due to challenges in applying existing experimental techniques to such nanoscale samples, their thermal properties have remained largely uncharacterized, hindering further exploration and device application using this promising material system. Here, we demonstrate an experimental study of thermal conduction in β-In2S3, a typical non-layered 2D material, using a resonant nanoelectromechanical systems (NEMS) platform. We devise a new two-degrees-of-freedom technique, more responsive and sensitive than Raman spectroscopy, to simultaneously determine both the thermal conductivity to be 3.7 W m-1 K-1 and its interfacial thermal conductance with SiO2 as 6.4 MW m-2 K-1. Leveraging such unique thermal properties, we further demonstrate a record-high power-to-frequency responsivity of -447 ppm/μW in β-In2S3 NEMS sensors, the best among drumhead NEMS-based bolometers. Our findings offer an effective approach for studying thermal properties and exploring potential thermal applications of 2D non-layered materials.
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Affiliation(s)
- Luming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Luwei Zou
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, China
| | - Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jiaqi Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Junzhi Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jiaze Qin
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yu Zhou
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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Wan Z, Li C, Liu R, Zhou W, Fan W, Huang C, Liu Y. Probing Thermal Transport on a Suspended Ti 3C 2T x MXene Film via a Photothermally Actuated Resonator. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4999-5008. [PMID: 38241705 DOI: 10.1021/acsami.3c16291] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Two-dimensional (2D) Ti3C2Tx MXene materials show great potential in electrochemical and flexible sensors due to their high electrical conductivity, good chemical stability, and special delaminated structure. However, their thermal properties were rarely studied, which remarkably affect the stability and safety of various devices. Here, we fabricated a suspended MXene drum resonator photothermally driven by a sinusoidally modulated laser, measured the thermal time constant by demodulating the thermomechanical motion, and then calculated the thermal conductivity and thermal diffusivity of the MXene film. Experiments show the thermal conductivity of the film increases from 3.10 to 3.58 W/m·K while the thermal diffusivity from 1.06 × 10-6 to 1.22 × 10-6 m2/s when temperature increases from 300 to 360 K. We also confirm the film thermal conductivity is mainly contributed by phonon transport rather than electron transport. Furthermore, the relationship between the mechanical and thermal properties of the MXene films was disclosed. The thermal conductivity decreases when film strain increases, caused by enhanced phonon scattering and softening of high-frequency phonons. The measurements provide a noninvasive method to analyze the thermal characteristics of suspended MXene films, which can be further extended to the thermal properties of other 2D materials.
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Affiliation(s)
- Zhen Wan
- School of Instrumentation Science and Optoelectronics Engineering, Beihang University, Beijing 100191, China
| | - Cheng Li
- School of Instrumentation Science and Optoelectronics Engineering, Beihang University, Beijing 100191, China
- Research Institute of Beihang University in Shenzhen, Shenzhen 518055, China
| | - Ronghui Liu
- School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing 100191, China
| | - Wei Zhou
- School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing 100191, China
| | - Wenjing Fan
- School of Instrumentation Science and Optoelectronics Engineering, Beihang University, Beijing 100191, China
| | - Chuanxue Huang
- School of Chemistry, Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing 100191, China
| | - Yang Liu
- School of Instrumentation Science and Optoelectronics Engineering, Beihang University, Beijing 100191, China
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Yu W, Ohara Y, Meffan C, Hirotani J, Banerjee A, Tsuchiya T. Achieving Ultrawide Tunability in Monolithically Fabricated Si Nanoresonator Devices. NANO LETTERS 2023; 23:11517-11525. [PMID: 38100378 DOI: 10.1021/acs.nanolett.3c03164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Nanoresonators are powerful and versatile tools promising to revolutionize a wide range of technological areas by delivering unparalleled performance in physical, chemical, biological sensing, signal and information processing, quantum computation, etc., via their high-frequency resonant vibration and rich dynamic behavior. Having the ability to tune the resonance frequency and dynamic behavior at the application stage promises further improvement in their effectiveness and enables novel applications. However, achieving significant room-temperature tunability in conventional (monolithically fabricated) nanoresonators is considered challenging. Here we demonstrate ultrawide electrostatic tuning (∼70%) of (initial) resonance-frequency (∼7% V-1) at room temperature in a monolithically fabricated ultrathin Si nanoresonator (width ∼ 40 nm, length ∼ 200 μm) device. Extreme electrostatic tuning of nonlinear behavior is also demonstrated by canceling the cubic-nonlinear coefficient and subsequently flipping its sign. Thus, these results are expected to provide remarkable operational flexibility and new capabilities to microfabricated resonators, which will benefit many technological areas.
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Affiliation(s)
- Wei Yu
- Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan
| | - Yuma Ohara
- Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan
| | - Claude Meffan
- Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan
| | - Jun Hirotani
- Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan
| | - Amit Banerjee
- Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan
| | - Toshiyuki Tsuchiya
- Department of Micro Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan
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Bagheri S, Lipatov A, Vorobeva NS, Sinitskii A. Interlayer Incorporation of A-Elements into MXenes Via Selective Etching of A' from M n+1A' 1-xA″ xC n MAX Phases. ACS NANO 2023; 17:18747-18757. [PMID: 37748108 DOI: 10.1021/acsnano.3c02198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
MXenes are a large family of two-dimensional materials with a general formula Mn+1XnTz, where M is a transition metal, X = C and/or N, and Tz represents surface functional groups. MXenes are synthesized by etching A-elements from layered MAX phases with a composition of Mn+1AXn. As over 20 different chemical elements were shown to form A-layers in various MAX phases, we propose that they can provide an abundant source of very diverse MXene-based materials. The general strategy for A-modified MXenes relies on the synthesis of Mn+1A'1-xA″xXn MAX phase, in which the higher reactivity of the A'-element compared to that of A″ enables its selective etching, resulting in A″-modified Mn+1XnTz. In general, the A″-element could modify the interlayer spaces of MXene flakes in a form of metallic or oxide species, depending on its chemical identity and synthetic conditions. We demonstrate this strategy by synthesizing Sn-modified Ti3C2Tz MXene from the Ti3Al0.75Sn0.25C2 MAX phase, which was used as a model system. Although the incorporation of Sn in the A-layer of Ti3AlC2 decreases the MAX phase reactivity, we developed an etching procedure to completely remove Al and produce Sn-modified Ti3C2Tz MXene. The resulting MXene sheets were of very high quality and exhibited improved environmental stability, which we attribute to the effect of a uniform Sn modification. Finally, we demonstrate a peculiar electrostatic expansion of Sn-modified Ti3C2Tz accordions, which may find interesting applications in MXene-based nano-electromechanical systems. Overall, these results demonstrate that in addition to different combinations of M and X elements in MAX phases, an A-layer also provides opportunities for the synthesis of MXene-based materials.
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Affiliation(s)
- Saman Bagheri
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Alexey Lipatov
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Department of Chemistry, Biology, and Health Sciences, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701, United States
- Karen M. Swindler Department of Chemical and Biological Engineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701, United States
| | - Nataliia S Vorobeva
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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Xu B, Zhu J, Xiao F, Jiao C, Liang Y, Wen T, Wu S, Zhang Z, Lin L, Pei S, Jia H, Chen Y, Ren Z, Wei X, Huang W, Xia J, Wang Z. Identifying, Resolving, and Quantifying Anisotropy in ReS 2 Nanomechanical Resonators. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300631. [PMID: 36897000 DOI: 10.1002/smll.202300631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/03/2023] [Indexed: 06/15/2023]
Abstract
As an emerging two-dimensional semiconductor, rhenium disulfide (ReS2 ) is renowned for its strong in-plane anisotropy in electrical, optical, and thermal properties. In contrast to the electrical, optical, optoelectrical, and thermal anisotropies that are extensively studied in ReS2 , experimental characterization of mechanical properties has largely remained elusive. Here, it is demonstrated that the dynamic response in ReS2 nanomechanical resonators can be leveraged to unambiguously resolve such disputes. Using anisotropic modal analysis, the parameter space for ReS2 resonators in which mechanical anisotropy is best manifested in resonant responses is determined. By measuring their dynamic response in both spectral and spatial domains using resonant nanomechanical spectromicroscopy, it is clearly shown that ReS2 crystal is mechanically anisotropic. Through fitting numerical models to experimental results, it is quantitatively determined that the in-plane Young's moduli are 127 and 201 GPa along the two orthogonal mechanical axes. In combination with polarized reflectance measurements, it is shown that the mechanical soft axis aligns with the Re-Re chain in the ReS2 crystal. These results demonstrate that dynamic responses in nanomechanical devices can offer important insights into intrinsic properties in 2D crystals and provide design guidelines for future nanodevices with anisotropic resonant responses.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lin Lin
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hao Jia
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ying Chen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ziming Ren
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xueyong Wei
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Wen Huang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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