Real-Time Investigation of Sulfur Vacancy Generation and Passivation in Monolayer Molybdenum Disulfide via in situ X-ray Photoelectron Spectromicroscopy

Phase Transformation on Multilayer 2M-WS2 for Improved Surface-enhanced Raman Scattering

In recent years, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been widely recognized as an ideal platform for surface-enhanced Raman scattering (SERS). Given their rich structural phases, phase transformation in 2D TMDCs is an efficient strategy to tailor their SERS performance. In this paper, we present the great SERS performance of multilayer 2M-WS2 and then investigate the effect of its phase transformation on SERS performance. It is observed that multilayer 2M-WS2 nanosheets undergo a thermally induced single-crystal phase transition from 2M-WS2 to 2H-WS2 upon thermal annealing or laser treatment. Distinguishing from the commercially available pure 2H-WS2 (P-2H-WS2), 2H-WS2 obtained by annealing and laser treatment still retain SERS properties comparable to those of 2M-WS2, among which the detection limits for CV molecules (10-8 M) are 3 orders of magnitude lower than that of P-2H-WS2 and the Raman intensity enhancements are ∼10-37 times higher. In contrast to the charge transfer (CT) mechanism governed by the Fermi level in metallic-phase 2M-WS2, 2H-WS2 obtained by phase transition exhibits accelerated CT facilitated by the bandgap reduction and reorganization resulting from the abundance of vacancies. This study introduces an interesting perspective and potential avenue for enhancing SERS through metal-to-semiconductor phase transitions in 2D TMDCs materials.

Defect Engineering in Bi-Based Photo/Electrocatalysts for Nitrogen Reduction to Ammonia

Main group Bi-based materials have gained popularity as N2 reduction reaction (NRR) photo/electrocatalysts due to their ability to inhibit competitive H2 evolution reactions (HER) and the unique N2 adsorption activities. The introduction of defects in Bi-based catalysts represents a highly effective strategy for enhancing light absorption, promoting efficient separation of photogenerated carriers, optimizing the activity of free radicals, regulating electronic structure, and improving catalytic performance. In this review, we outline the various applications of state of the defect engineering in Bi-based catalysts and elucidate the impact of vacancies on NRR performance. In particular, the types of defects, methods of defects tailoring, advanced characterization techniques, as well as the Bi-based catalysts with abundant defects and their corresponding catalytic behavior in NRR were elucidated in detail. Finally, the main challenges and opportunities for future development of defective Bi-based NRR catalysts are discussed, which provides a comprehensive theoretical guidance for this field.

Role of S-Vacancy Concentration in Air Oxidation of WS2 Single Crystals

Semiconducting transition metal dichalcogenides (TMDs) are a class of two-dimensional materials with potential applications in optoelectronics, spintronics, valleytronics, and quantum information processing. Understanding their stability under ambient conditions is critical for determining their in-air processability during device fabrication and for predicting their long-term device performance stability. While the effects of environmental conditions (i.e., oxygen, moisture, and light) on TMD degradation are well-acknowledged, the role of defects in driving their oxidation remains unclear. We conducted a systematic X-ray photoelectron spectroscopy study on WS2 single crystals with different surface S-vacancy concentrations formed via controlled argon sputtering. Oxidation primarily occurred at defect concentrations ≥ 10%, resulting in stoichiometric WO3 formation, while a stable surface was observed at lower concentrations. Theoretical calculations informed us that single S-vacancies do not spontaneously oxidize, while defect pairing at high vacancy concentrations facilitates O2 dissociation and subsequent oxide formation. Our XPS results also point to vacancy-related structural and electrostatic disorder as the main origin for the p-type characteristics that persists even after oxidation. Despite the complex interplay between defects and TMD oxidation processes, our work unveils scientifically informed guidance for working effectively with TMDs.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Femtosecond Laser-Driven Phase Engineering of WS2 for Nano-Periodic Phase Patterning and Sub-ppm Ammonia Gas Sensing

Laser-driven phase transition of 2D transition metal dichalcogenides has attracted much attention due to its high flexibility and rapidity. However, there are some limitations during the laser irradiation process, especially the unsatisfied surface ablation, the inability of nanoscale phase patterning, and the unexploited physical properties of new phase. In this work, the well-controlled femtosecond (fs) laser-driven transformation from the metallic 2M-WS2 to the semiconducting 2H-WS2 is reported, which is confirmed to be a single-crystal to single-crystal transition without layer thinning or obvious ablation. Moreover, a highly ordered 2H/2M nano-periodic phase transition with a resolution of ≈435 nm is achieved, breaking through the existing size bottleneck of laser-driven phase transition, which is attributed to the selective deposition of plasmon energy induced by fs laser. It is also demonstrated that the achieved 2H-WS2 after laser irradiation contains rich sulfur vacancies, which exhibits highly competitive ammonia gas sensing performance, with a detection limit below 0.1 ppm and a fast response/recovery time of 43/67 s at room temperature. This study provides a new strategy for the preparation of the phase-selective transition homojunction and high-performance applications in electronics.

Isomer Discrimination via Defect Engineering in Monolayer MoS2

The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

2 A cm-2 Level Large-Scale Production of Hydrogen Enabled by Constructing Higher Capacity of Interface "Electron Pocket"

The batch production of high-purity hydrogen is a key problem that restricts the progress of fuel cells and the blueprint for achieving carbon neutrality. Transition-metal chalcogenide heterojunctions exhibit certain activity toward electrochemical overall water splitting (EOWS), but their high-current-density catalytic performances are still unsatisfactory due to the slow kinetic progression (H* or *O → *OOH). Inspired by the "electron pocket" theory, we designed a Ni-Mo bimetallic disulfide interface heterojunction electrocatalyst system (NM-IHJ-V) with high electronic storage capacity around the Fermi level (-0.5 eV, +0.5 eV) (e-DFE), which injects more power into the kinetic progression processes of intermediate species in the EOWS process. Consequently, it achieves a superhigh current density of 2 A cm-2 level for EOWS (only 1.98 V voltage is needed), which is 11.23-fold higher than that of the benchmarked Pt/C//IrO2 (178 mA cm-2@1.98 V), as well as an excellent long-term stability of 200 h. Most strikingly, NM-IHJ-V can efficiently produce hydrogen at currents up to 5 A. Our proposed strategy of constructing catalysts to produce hydrogen at superhigh current density through the electron pocket theory will supply valuable insights for the designing other catalytic systems.

Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS₂ by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d_5/2 core peak at 230.1 eV emerges in the annealed MoS₂ associated with nonstoichiometric MoS_x (0 < x < 2), and Raman spectroscopy shows an enhancement of the ∼380 cm^-1 peak that is attributed to sulfur vacancies. At sulfur vacancy densities of ∼1.8 × 10¹⁴ cm^-2, we observe a defect peak at ∼1.72 eV (referred to as LX_D) at room temperature in the photoluminescence (PL) spectrum. The LX_D peak is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX_D emission is longer than that of band edge excitons, both at room and low temperatures (∼2.44 ns at 8 K). The LX_D peak can be suppressed by annealing the defective MoS₂ in sulfur vapor, which indicates that it is possible to passivate the vacancies. Our results provide insights into how excitonic and defect-mediated PL emissions in MoS₂ are influenced by sulfur vacancies at room and low temperatures.