1
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Tan Z, Guo S, Wang W, Li G, Yan Z. Multi-dimensional composite catalyst NiFeCoMoS/NFF for overall electrochemical water splitting. RSC Adv 2025; 15:5305-5315. [PMID: 39963461 PMCID: PMC11831736 DOI: 10.1039/d4ra08605h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2024] [Accepted: 02/07/2025] [Indexed: 02/20/2025] Open
Abstract
Precise catalyst design is essential in the electrolysis of water to deliver clean energy, where the challenge is to construct highly active sites at the electrocatalyst interface. In this study, CoPVP/NFF (NiFe foam) and Mo-CoPVP/NFF precursors were synthesized sequentially in a hydrothermal procedure using NiFe foam as substrate with the ultimate formation of a NiFeCoMoS/NFF electrocatalyst by vulcanization at 350°. The NiFeCoMoS/NFF system exhibits a complex 1D-2D-3D composite structure with 1D nanoparticles attached to a 2D nano-paper on the surface of the 3D NiFe foam. The overpotentials associated with hydrogen and oxygen evolution by NiFeCoMoS/NFF are 123 mV and 245 mV, respectively, at a current density of 10 mA cm-2. A three-electrode system using NiFeCoMoS/NFF as working and counter electrode has been assembled that can generate current densities of 100 mA cm-2 at voltages of 1.87 V. Theoretical (DFT) calculations have shown that NiFeCoMoS/NFF exhibits favorable H adsorption energetics and a low OER reaction barrier. This study has identified a viable means of enhancing the efficiency of water electrolysis by regulating catalyst surface structure.
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Affiliation(s)
- Zhaojun Tan
- School of Mechanical Engineering, North China University of Water Resources and Electric Power Zhengzhou 450045 PR China +86 13603990078 +86 18638513931
| | - Shuaihui Guo
- School of Mechanical Engineering, North China University of Water Resources and Electric Power Zhengzhou 450045 PR China +86 13603990078 +86 18638513931
| | - Wen Wang
- School of Mechanical Engineering, North China University of Water Resources and Electric Power Zhengzhou 450045 PR China +86 13603990078 +86 18638513931
| | - Gang Li
- School of Mechanical Engineering, North China University of Water Resources and Electric Power Zhengzhou 450045 PR China +86 13603990078 +86 18638513931
| | - Zhenwei Yan
- School of Mechanical Engineering, North China University of Water Resources and Electric Power Zhengzhou 450045 PR China +86 13603990078 +86 18638513931
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2
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Sukserm A, Seeyangnok J, Pinsook U. Half-metallic and ferromagnetic phases in CrSH monolayers using DFT+ U and BO-MD calculations. Phys Chem Chem Phys 2025; 27:3950-3959. [PMID: 39902533 DOI: 10.1039/d4cp04563g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2025]
Abstract
We present a comprehensive investigation of the structural, electronic, magnetic, and vibrational properties of CrSH monolayers in the 1T and 1H phases using density functional theory (DFT)+U calculations with a converged Hubbard U value of 5.52 eV and Born-Oppenheimer molecular dynamics (BO-MD) simulations. The ferromagnetic (FM) 1T-CrSH phase is found to be dynamically and thermodynamically stable, exhibiting semiconducting behavior with a band gap of 1.1 eV and a magnetic moment of 3.0 μB per Cr atom. On the other hand, the 1H-CrSH phase is a half-metallic (HM) phase. We found that it is a metastable phase and undergoes a rapid phase transition to the 1T phase at a finite temperature at 300 K. Phonon calculations, performed using the finite displacement method and corrected for rotational invariance corrections with Huang and Born-Huang sum rules, resolve spurious imaginary frequencies in the flexural ZA phonon mode near the Γ-point, ensuring physical accuracy. These findings establish CrSH monolayers as promising candidates for spintronic and valleytronic applications, with tunable electronic properties enabled by phase engineering.
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Affiliation(s)
- Akkarach Sukserm
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand.
| | - Jakkapat Seeyangnok
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand.
| | - Udomsilp Pinsook
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand.
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3
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Lim SH, Kim G, Cho S, Kim YK, Ko EB, Choi SY, Heo JA, Kim D, Yoo H, Lee SY, Kim Y, Cha PR, Lee DY, Lee S, Jang BC, Kim Y, Kim HH. Ultrafast and Universal Synthetic Route for Nanostructured Transition Metal Oxides Directly Grown on Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2418407. [PMID: 39910825 DOI: 10.1002/adma.202418407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2024] [Revised: 01/14/2025] [Indexed: 02/07/2025]
Abstract
Nanostructured transition metal oxides (NTMOs) have consistently piqued scientific interest for several decades due to their remarkable versatility across various fields. More recently, they have gained significant attention as materials employed for energy storage/harvesting devices as well as electronic devices. However, mass production of high-quality NTMOs in a well-controlled manner still remains challenging. Here, a universal, ultrafast, and solvent-free method is presented for producing highly crystalline NTMOs directly onto target substrates. The findings reveal that the growth mechanism involves the solidification of condensed liquid-phase TMO microdroplets onto the substrate under an oxygen-rich ambient condition. This enables a continuous process under ambient air conditions, allowing for processing within just a few tens of seconds per sample. Finally, it is confirmed that the method can be extended to the synthesis of various NTMOs and their related compounds.
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Affiliation(s)
- Si Heon Lim
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
- Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Geunwoo Kim
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Sungjin Cho
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Republic of Korea
- Applied Measurement Science, University of Science and Technology (UST), Daejeon, 34113, Republic of Korea
| | - Yeong Kwon Kim
- School of Electronics Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Eun Bee Ko
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
- Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Seon Yeon Choi
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
- Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Jung A Heo
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Daegun Kim
- School of Chemical, Biological, and Battery Engineering, Gachon University, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seoul, 04763, Republic of Korea
| | - So-Yeon Lee
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - YongJoo Kim
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Pil-Ryung Cha
- School of Materials Science and Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Dong Yun Lee
- Department of Polymer Science and Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Sunghun Lee
- Division of Nanotechnology, Convergence Research Institute, Daegu Gyeongbuk Institute of Science and Technology, Daegu, 42988, Republic of Korea
| | - Byung Chul Jang
- School of Electronics Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Yeonhoo Kim
- Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Republic of Korea
- Applied Measurement Science, University of Science and Technology (UST), Daejeon, 34113, Republic of Korea
| | - Hyun Ho Kim
- School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
- Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
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4
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Zhu Y, Sun JT, Pan J, Deng J, Du S. Enforced Symmetry Breaking for Anomalous Valley Hall Effect in Two-Dimensional Hexagonal Lattices. PHYSICAL REVIEW LETTERS 2025; 134:046403. [PMID: 39951606 DOI: 10.1103/physrevlett.134.046403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2024] [Revised: 11/07/2024] [Accepted: 12/21/2024] [Indexed: 02/16/2025]
Abstract
The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of the valley degree of freedom in materials. A general strategy for its realization and manipulation is crucial for valleytronics. Here, by considering all possible symmetries, we propose general rules for the realization and manipulation of AVHE in two-dimensional hexagonal lattices. The realization of AVHE requires breaking the enforced symmetry that is associated with different valleys or reverses the sign of Berry curvature. Further manipulation of AVHE requires asymmetry operators connecting two states with opposite signs of Berry curvature. These rules for realizing and manipulating AVHE are extendable to generic points in momentum space. Combined with first-principles calculations, we realize the controllable AVHE in four representative systems, i.e., monolayer AgCrP_{2}Se_{6}, CrOBr, FeCl_{2}, and bilayer TcGeSe_{3}. Our work provides symmetry rules for designing valleytronic materials that could facilitate the experimental detection and realistic applications.
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Affiliation(s)
- Yongqian Zhu
- Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China
- Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jia-Tao Sun
- Beijing Institute of Technology, School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing 100081, China
| | - Jinbo Pan
- Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China
- Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jun Deng
- Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China
| | - Shixuan Du
- Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China
- Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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5
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Rothhardt D, Penschke C, Hug HJ, Hoffmann-Vogel R, Kimouche A. Edge-Energy-Driven Growth of Monolayer MnI 2 Islands on Ag(111): High-Resolution Imaging and Theoretical Analysis. ACS NANO 2025; 19:2261-2267. [PMID: 39762196 PMCID: PMC11760154 DOI: 10.1021/acsnano.4c12146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2024] [Revised: 12/12/2024] [Accepted: 12/19/2024] [Indexed: 01/22/2025]
Abstract
The reduced dimensionality of thin transition metal dihalide films on single-crystal surfaces unlocks a diverse range of magnetic and electronic properties. However, achieving stoichiometric monolayer islands requires precise control over the growth conditions. In this study, we employ scanning probe microscopy to investigate the growth of MnI2 on Ag(111) via single-crucible evaporation. The catalytic properties of the Ag(111) surface facilitate MnI2 dehalogenation, leading to the formation of a reconstructed iodine adlayer that acts as a buffer layer for the growth of truncated hexagonal MnI2 islands. These islands exhibit alternating edge lengths and distinct Kelvin potentials, as revealed by Kelvin probe force microscopy. Density functional theory (DFT) calculations support the experimentally observed island heights and lattice parameters and provide insights into the formation energies of both pristine and reconstructed edges. The asymmetry in edge lengths is attributed to differences in edge formation energies, driven by the position (up or down) of edge iodine atoms, as confirmed by DFT. This structural difference accounts for the observed variation in the Kelvin potential between the two types of island edge terminations.
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Affiliation(s)
- Daniel Rothhardt
- Magnetic
& Functional Thin Films Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Dübendorf, Switzerland
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
| | | | - Hans Josef Hug
- Magnetic
& Functional Thin Films Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Dübendorf, Switzerland
- Department
of Physics, University of Basel, CH-4056 Basel, Switzerland
| | - Regina Hoffmann-Vogel
- Institute
of Physics and Astronomy, University of
Potsdam, 14476 Potsdam-Golm, Germany
| | - Amina Kimouche
- Institute
of Physics and Astronomy, University of
Potsdam, 14476 Potsdam-Golm, Germany
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6
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Yang Q, Li X, Zhao L, Wang G, Guo Z, Niu K, Jiang S, Hou F, Lin J. Unified transmission electron microscopy with the glovebox integrated system for investigating air-sensitive two-dimensional quantum materials. Innovation (N Y) 2025; 6:100751. [PMID: 39872486 PMCID: PMC11764047 DOI: 10.1016/j.xinn.2024.100751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Accepted: 12/02/2024] [Indexed: 01/30/2025] Open
Abstract
Transmission electron microscopy (TEM) is an indispensable tool for elucidating the intrinsic atomic structures of materials and provides deep insights into defect dynamics, phase transitions, and nanoscale structural details. While numerous intriguing physical properties have been revealed in recently discovered two-dimensional (2D) quantum materials, many exhibit significant sensitivity to water and oxygen under ambient conditions. This inherent instability complicates sample preparation for TEM analysis and hinders accurate property measurements. This review highlights recent technical advancements to preserve the intrinsic structures of water- and oxygen-sensitive 2D materials for atomic-scale characterizations. A critical development discussed in this review is implementing an inert gas-protected glovebox integrated system (GIS) designed specifically for TEM experiments. In addition, this review emphasizes air-sensitive materials such as 2D transition metal dichalcogenides, transition metal dihalides and trihalides, and low-dimensional magnetic materials, demonstrating breakthroughs in overcoming their environmental sensitivity. Furthermore, the progress in TEM characterization enabled by the GIS is analyzed to provide a comprehensive overview of state-of-the-art methodologies in this rapidly advancing field.
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Affiliation(s)
- Qishuo Yang
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072, Australia
| | - Xingxing Li
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Ludan Zhao
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Gang Wang
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Zenglong Guo
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Kangdi Niu
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
| | - Shaolong Jiang
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Fuchen Hou
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Junhao Lin
- Department of Physics and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
- Guangdong Provincial Key Laboratory of Advanced Thermoelectric Materials and Device Physics, Southern University of Science and Technology, Shenzhen 518055, China
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7
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Kong D, Zhu C, Zhao C, Liu J, Wang P, Huang X, Zheng S, Zheng D, Liu R, Zhou J. Emerging two-dimensional ferromagnetic semiconductors. Chem Soc Rev 2024; 53:11228-11250. [PMID: 39404004 DOI: 10.1039/d4cs00378k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2024]
Abstract
Two-dimensional (2D) semiconductors have attracted considerable attention for their potential in extending Moore's law and advancing next-generation electronic devices. Notably, the discovery and development of 2D ferromagnetic semiconductors (FMSs) open exciting opportunities in manipulating both charge and spin, enabling the exploration of exotic properties and the design of innovative spintronic devices. In this review, we aim to offer a comprehensive summary of emerging 2D FMSs, covering their atomic structures, physical properties, preparation methods, growth mechanisms, magnetism modulation techniques, and potential applications. We begin with a brief introduction of the atomic structures and magnetic properties of novel 2D FMSs. Next, we delve into the latest advancements in the exotic physical properties of 2D FMSs. Following that, we summarize the growth methods, associated growth mechanisms, magnetism modulation techniques and spintronic applications of 2D FMSs. Finally, we offer insights into the challenges and potential applications of 2D FMSs, which may inspire further research in developing high-density, non-volatile storage devices based on 2D FMSs.
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Affiliation(s)
- Denan Kong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
| | - Chunli Zhu
- Complex Environmental Science Exploration Center, Beijing Institute of Technology, Beijing, 10081, China
| | - Chunyu Zhao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
| | - Jijian Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
| | - Ping Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
| | - Xiangwei Huang
- Laboratory of low dimensional materials and devices, Beijing Institute of Technology, Zhuhai, Guangdong, 519000, China.
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
- Laboratory of low dimensional materials and devices, Beijing Institute of Technology, Zhuhai, Guangdong, 519000, China.
| | - Dezhi Zheng
- Complex Environmental Science Exploration Center, Beijing Institute of Technology, Beijing, 10081, China
| | - Ruibin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
- Complex Environmental Science Exploration Center, Beijing Institute of Technology, Beijing, 10081, China
- Laboratory of low dimensional materials and devices, Beijing Institute of Technology, Zhuhai, Guangdong, 519000, China.
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8
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Qi R, You Y, Grzeszczyk M, Jyothilal H, Bera A, Laverock J, Natera-Cordero N, Huang P, Nam GH, Kravets VG, Burrow D, Toscano Figueroa JC, Ho YW, Fox NA, Grigorenko AN, Vera-Marun IJ, Keerthi A, Koperski M, Radha B. Versatile Method for Preparing Two-Dimensional Metal Dihalides. ACS NANO 2024; 18:22034-22044. [PMID: 39106126 PMCID: PMC11342368 DOI: 10.1021/acsnano.4c04397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Revised: 07/20/2024] [Accepted: 07/25/2024] [Indexed: 08/09/2024]
Abstract
Ever since the ground-breaking isolation of graphene, numerous two-dimensional (2D) materials have emerged with 2D metal dihalides gaining significant attention due to their intriguing electrical and magnetic properties. In this study, we introduce an innovative approach via anhydrous solvent-induced recrystallization of bulk powders to obtain crystals of metal dihalides (MX2, with M = Cu, Ni, Co and X = Br, Cl, I), which can be exfoliated to 2D flakes. We demonstrate the effectiveness of our method using CuBr2 as an example, which forms large layered crystals. We investigate the structural properties of both the bulk and 2D CuBr2 using X-ray diffraction, along with Raman scattering and optical spectroscopy, revealing its quasi-1D chain structure, which translates to distinct emission and scattering characteristics. Furthermore, microultraviolet photoemission spectroscopy and electronic transport reveal the electronic properties of CuBr2 flakes, including their valence band structure. We extend our methodology to other metal halides and assess the stability of the metal halide flakes in controlled environments. We show that optical contrast can be used to characterize the flake thicknesses for these materials. Our findings demonstrate the versatility and potential applications of the proposed methodology for preparing and studying 2D metal halide flakes.
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Affiliation(s)
- Rongrong Qi
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Yi You
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Magdalena Grzeszczyk
- Department
of Materials Science and Engineering, National
University of Singapore, Singapore 117575, Singapore
- Institute
for Functional Intelligent Materials, National
University of Singapore, Singapore 117544, Singapore
| | - Hiran Jyothilal
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Achintya Bera
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
- Photon
Science Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Jude Laverock
- School of
Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, U.K.
| | - Noel Natera-Cordero
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Pengru Huang
- Department
of Materials Science and Engineering, National
University of Singapore, Singapore 117575, Singapore
- Institute
for Functional Intelligent Materials, National
University of Singapore, Singapore 117544, Singapore
| | - Gwang-Hyeon Nam
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Vasyl G. Kravets
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
| | - Daniel Burrow
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | | | - Yi Wei Ho
- Institute
for Functional Intelligent Materials, National
University of Singapore, Singapore 117544, Singapore
- Department
of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Neil A. Fox
- School of
Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, U.K.
| | | | - Ivan J. Vera-Marun
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
| | - Ashok Keerthi
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
- Department
of Chemistry, University of Manchester, Manchester M13 9PL, U.K.
| | - Maciej Koperski
- Department
of Materials Science and Engineering, National
University of Singapore, Singapore 117575, Singapore
- Institute
for Functional Intelligent Materials, National
University of Singapore, Singapore 117544, Singapore
| | - Boya Radha
- Department
of Physics & Astronomy, University of
Manchester, Manchester M13 9PL, U.K.
- National
Graphene Institute, University of Manchester, Manchester M13 9PL, U.K.
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9
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Xiang F, Bisht N, Da B, Mohammed MSG, Neiss C, Görling A, Maier S. Intrinsically Patterned Two-Dimensional Transition Metal Halides. ACS NANO 2024; 18:18870-18879. [PMID: 39001861 DOI: 10.1021/acsnano.3c09580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Patterning and defect engineering are key methods for tuning the properties and enabling distinctive functionalities in two-dimensional (2D) materials. However, generating 2D periodic patterns of point defects in 2D materials, such as vacancy lattices that can serve as antidot lattices, has been elusive until now. Herein, we report on 2D transition metal dihalides epitaxially grown on metal surfaces featuring periodically assembled halogen vacancies that result in alternating coordination of the transition metal atom. Using low-temperature scanning probe microscopy and low-energy electron diffraction, we identified the structural properties of intrinsically patterned FeBr2 and CoBr2 monolayers grown epitaxially on Au(111). Density functional theory reveals that Br vacancies are facilitated by low formation energies, and the formation of a vacancy lattice results in a substantial decrease in the lattice mismatch with the underlying Au(111). We demonstrate that interfacial strain engineering presents a versatile strategy for controlled patterning in two dimensions with atomic precision over several hundred nanometers to solve a long-standing challenge of growing atomically precise antidot lattices. In particular, patterning of 2D materials containing transition metals provides a versatile method to achieve unconventional spin textures with noncollinear spin.
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Affiliation(s)
- Feifei Xiang
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Neeta Bisht
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Binbin Da
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Mohammed S G Mohammed
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Christian Neiss
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Andreas Görling
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Sabine Maier
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
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10
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Dong W, Dai Z, Liu L, Zhang Z. Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303014. [PMID: 38049925 DOI: 10.1002/adma.202303014] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 08/30/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.
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Affiliation(s)
- Wenlong Dong
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhaohe Dai
- Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, 100871, China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhong Zhang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230027, China
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Zhou X, Jiang T, Tao Y, Ji Y, Wang J, Lai T, Zhong D. Evidence of Ferromagnetism and Ultrafast Dynamics of Demagnetization in an Epitaxial FeCl 2 Monolayer. ACS NANO 2024; 18:10912-10920. [PMID: 38613502 DOI: 10.1021/acsnano.4c01436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/15/2024]
Abstract
The development of two-dimensional (2D) magnetism is driven not only by the interest of low-dimensional physics but also by potential applications in high-density miniaturized spintronic devices. However, 2D materials possessing a ferromagnetic order with a relatively high Curie temperature (Tc) are rare. In this paper, the evidence of ferromagnetism in monolayer FeCl2 on Au(111) surfaces, as well as the interlayer antiferromagnetic coupling of bilayer FeCl2, is characterized by using spin-polarized scanning tunneling microscopy. A Curie temperature (Tc) of ∼147 K is revealed for monolayer FeCl2, based on our static magneto-optical Kerr effect measurements. Furthermore, temperature-dependent magnetization dynamics is investigated by the time-resolved magneto-optical Kerr effect. A transition from one- to two-step demagnetization occurs as the lattice temperature approaches Tc, which supports the Elliott-Yafet spin relaxation mechanism. The findings contribute to a deeper understanding of the underlying mechanisms governing ultrafast magnetization in 2D ferromagnetic materials.
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Affiliation(s)
- Xuhan Zhou
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Guangzhou No. 89 Secondary School, Guangzhou 510520, China
| | - Tianran Jiang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Ye Tao
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yi Ji
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Jingying Wang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Tianshu Lai
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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Zhang L, Zhao Y, Liu Y, Gao G. High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe. NANOSCALE 2023; 15:18910-18919. [PMID: 37975757 DOI: 10.1039/d3nr04627c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
The emerging two-dimensional (2D) Janus systems with broken symmetry provide a new platform for designing ultrathin multifunctional spintronic materials. Recently, based on experimental monolayer MnSe2, ferromagnetism was predicted in Janus MnXY (X ≠ Y = S, Se, Te) monolayers; however, they exhibit low Curie temperatures and small magnetic anisotropic energies. To improve the Curie temperature and magnetic anisotropy, herein, we systemically explore the stability and electronic and magnetic properties of Janus MnSeTe and MnSTe monolayers under strain and carrier-doping using first-principles calculations and Monte Carlo simulations. It is found that both MnSeTe and MnSTe monolayers possess robustly high spin polarization with rational strain and carrier-doping. Both tensile strain and hole doping strengthen the ferromagnetic super-exchange interactions of the two nearest Mn atoms mediated by chalcogen atoms and exceedingly improve the perpendicular magnetic anisotropic energies (by up to 3.1 meV per f.u. for MnSeTe and 2.0 meV per f.u. for MnSTe). The Te-5p intraorbital hybridizations contributed to the main magnetic anisotropy. More remarkably, the tensile strain and hole doping collectively increase the Curie temperatures of MnSeTe and MnSTe to above and near room temperature (345 and 290 K, respectively). The present study reveals that Janus MnSeTe and MnSTe monolayers with robustly high spin polarization, room-temperature ferromagnetism and large perpendicular magnetic anisotropy are promising candidates for ultrathin multifunctional spintronic materials. This study will be of great interest for further experimental and theoretical explorations of 2D Janus manganese dichalcogenides.
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Affiliation(s)
- Long Zhang
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yan Zhao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yuqi Liu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Guoying Gao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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