1
|
Hoat DM, Tien NT, Nguyen DK, Guerrero-Sanchez J. Antiferromagnetism in GaS monolayer doped with TM-TM atom pairs (TM = V, Cr, Mn, and Fe). Phys Chem Chem Phys 2024; 26:18657-18666. [PMID: 38921698 DOI: 10.1039/d4cp01119h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
In this work, structural modification at Ga sites of the gallium sulfide (GaS) monolayer is explored to create new two-dimensional (2D) materials towards spintronic applications. GaS monolayer is a non-magnetic indirect-gap semiconductor material with an energy gap of 2.38 (3.27) eV as calculated using the PBE(HSE06) functional. Half-metallicity is induced in this 2D material by creating a single Ga vacancy, where S atoms around the defect site produce mainly the magnetic properties with a total magnetic moment of 1.00μB. In contrast, the non-magnetic nature is preserved under the effects of a pair of Ga vacancies, which metallize the monolayer. V, Mn, and Fe doping leads to the emergence of the diluted magnetic semiconductor nature, while doping with Cr creates a new 2D half-metallic material from the GaS monolayer. In these cases, total magnetic moments between 2.00 and 5.00μB are obtained and the 3d orbital of transition metal (TM) impurities mainly induces the system magnetism. In addition, the effects of doping with a pair of TM (pTM) atoms are also investigated, in which the antiferromagnetism is found to be stable rather than the ferromagnetism to follow the Pauli exclusion principle. Significant magnetization of the GaS monolayer is also achieved with zero total magnetic moment because of the structural mirror-symmetry. pV-, pMn-, and pFe-doped systems are antiferromagnetic semiconductor materials with energy gaps of 1.06, 1.90, and 1.84 eV, respectively. Meanwhile, the monolayer is metallized by doping with a pCr pair. The results presented herein indicate that the defective and doped GaS monolayers are prospective 2D candidates for spintronic applications - which are hindered for the pristine GaS monolayer because of the absence of intrinsic magnetism.
Collapse
Affiliation(s)
- D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Nguyen Thanh Tien
- College of Natural Sciences, Can Tho University, 3-2 Road, Can Tho City 900000, Vietnam
| | - Duy Khanh Nguyen
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam.
- Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh City, Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| |
Collapse
|
2
|
Yu M, Iddawela SA, Wang J, Hilse M, Thompson JL, Reifsnyder Hickey D, Sinnott SB, Law S. Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates. ACS NANO 2024; 18:17185-17196. [PMID: 38870462 DOI: 10.1021/acsnano.4c04194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ'-polymorph. We analyze the formation mechanism of γ'-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ'-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.
Collapse
Affiliation(s)
- Mingyu Yu
- Department of Materials Science and Engineering, University of Delaware, 201 Dupont Hall, 127 The Green, Newark, Delaware 19716, United States
| | - Sahani Amaya Iddawela
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jiayang Wang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Maria Hilse
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jessica L Thompson
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Danielle Reifsnyder Hickey
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Susan B Sinnott
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Institute for Computational and Data Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Penn State Institute of Energy and the Environment, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Stephanie Law
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Penn State Institute of Energy and the Environment, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| |
Collapse
|
3
|
Yang H, Wu Y, Li H, Zhang Y, Gao L, Wang L, Wang F. Bandgap regulation and doping modification of Ga 2-x Cr x Se 3 nanosheets. RSC Adv 2024; 14:18685-18694. [PMID: 38863815 PMCID: PMC11165402 DOI: 10.1039/d4ra03028a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Accepted: 06/04/2024] [Indexed: 06/13/2024] Open
Abstract
Ga2Se3, an important direct wide bandgap semiconductor with excellent optoelectronic properties, has wide application potential in the fields of photodetectors, photoelectric sensors and solar cells. Herein, we describe the synthesis of Ga2Se3 semiconductor nanoparticles using a high temperature organic liquid phase method. Post-annealing treatment at different temperatures can not only improve the crystallinity of Ga2Se3 nanoparticles, but also regulate its optical band gap ranging from 2.50 to 2.80 eV. We further synthesized Ga2-x Cr x Se3 nanosheets by doping CrCl3·6H2O in the reaction process. By adjusting the Cr doping concentration, Ga2-x Cr x Se3 nanosheets can achieve a continuously tunable band gap in the range of 2.23 eV to 2.42 eV. Both Ga2-x Cr x Se3 nanosheets and Ga2Se3 nanoparticles exhibit excellent and stable photoelectric switching performance. With Cr doping, Ga2-x Cr x Se3 exhibits reduced Nyquist impedance and enhanced electrocatalytic activity, which is attributed to its ultrathin nanosheet morphology and large specific surface area. In addition, the diamagnetic behavior of pure Ga2Se3 changes to ferromagnetism with different Cr doping concentrations, and its magnetization is as high as 18.0 emu g-1 at x = 0.4. These findings demonstrate that Ga2-x Cr x Se3 nanosheets have significant potential in future optoelectronic and magnetoelectric applications.
Collapse
Affiliation(s)
- Huan Yang
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| | - Yue Wu
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| | - Huirong Li
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| | - Yiwen Zhang
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| | - Linmei Gao
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| | - Lanfang Wang
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| | - Fang Wang
- School of Chemistry and Materials Science of Shanxi Normal University, Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Taiyuan 030032 China
- Research Institute of Materials Science of Shanxi Normal University, Collaborative Innovation Center for Advanced Permanent Magnetic Materials and Technology of Ministry of Education Taiyuan 030032 China
| |
Collapse
|
4
|
Maßmeyer O, Günkel R, Glowatzki J, Klement P, Ojaghi Dogahe B, Kachel SR, Gruber F, Müller M, Fey M, Schörmann J, Belz J, Beyer A, Gottfried JM, Chatterjee S, Volz K. Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402155. [PMID: 38795001 DOI: 10.1002/smll.202402155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 04/18/2024] [Indexed: 05/27/2024]
Abstract
Two-dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials' properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar-blind photodiodes and light-emitting diodes as applications. However, achieving commercial viability requires wafer-scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one-step synthesis of 2D GaS is introduced via metal-organic chemical vapor deposition on sapphire substrates. The pulsed-mode deposition of industry-standard precursors promotes 2D growth by inhibiting the vapor phase and on-surface pre-reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin-film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications.
Collapse
Affiliation(s)
- Oliver Maßmeyer
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Robin Günkel
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Johannes Glowatzki
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Philip Klement
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Badrosadat Ojaghi Dogahe
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Stefan Renato Kachel
- Material Sciences Center and Department of Chemistry, Philipps-Universität Marburg, Hans-Meerwein-Straße 4, 35043, Marburg, Germany
| | - Felix Gruber
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Marius Müller
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Melanie Fey
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Jörg Schörmann
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Jürgen Belz
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - Andreas Beyer
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| | - J Michael Gottfried
- Material Sciences Center and Department of Chemistry, Philipps-Universität Marburg, Hans-Meerwein-Straße 4, 35043, Marburg, Germany
| | - Sangam Chatterjee
- Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen, Germany
| | - Kerstin Volz
- Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Hans-Meerwein-Straße 6, 35043, Marburg, Germany
| |
Collapse
|
5
|
Ma Y, Bao A, Guo X, Wang J. Carrier mobility and optical properties of a type-II GaSe/ZnS heterostructure as a photocatalyst: a first-principles study. Phys Chem Chem Phys 2024; 26:14980-14990. [PMID: 38739457 DOI: 10.1039/d4cp00972j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
In this paper, a new GaSe/ZnS van der Waals heterostructure (vdWH) was constructed and a systematic analysis of the electronic structure, interfacial properties, and transport and photocatalytic capacity of the GaSe/ZnS vdWH was performed by using first-principles calculations. It was found that the heterostructure exhibited excellent photocatalytic performance for water splitting. The direct band gap of the heterostructure calculated using the hybrid HSE06 functional was 2.19 eV, which had a good visible light absorption ability. The electronic structure of the type-II band arrangement effectively reduced the recombination of electron-hole pairs. The heterostructure also showed excellent transport ability, and the carrier mobility of electrons and holes along different directions was greatly improved. Additionally, as the electric field strength increased, the band gap width of the GaSe/ZnS vdWH narrowed and the heterostructure characteristics transitioned from semiconductor to metal properties, which were attributed to the appearance of near-free electronic (NFE) states induced by the strong electric field. Meanwhile, the optical absorption capacity of the heterostructure was greatly improved compared to the ZnS monolayer, reaching 1.44 × 105 cm-1 at an incident photon energy of 8.65 eV. Therefore, the GaSe/ZnS vdWH was proved to be an excellent photocatalytic material for water splitting in the present study.
Collapse
Affiliation(s)
- Yongqiang Ma
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| | - Aida Bao
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| | - Xin Guo
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| | - Jie Wang
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| |
Collapse
|
6
|
Shih YT, Lin DY, Tseng BC, Huang TC, Kao YM, Kao MC, Hwang SB. Photoelectric Properties of GaS 1-xSe x (0 ≤ x ≤ 1) Layered Crystals. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:701. [PMID: 38668195 PMCID: PMC11054839 DOI: 10.3390/nano14080701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 04/14/2024] [Accepted: 04/15/2024] [Indexed: 04/29/2024]
Abstract
In this study, the photoelectric properties of a complete series of GaS1-xSex (0 ≤ x ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaS1-xSex as the Se composition x increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaS1-xSex to light with increasing x. Frequency-dependent photocurrent measurements demonstrate that both pure GaS crystals and GaS1-xSex ternary alloy crystals exhibit a rapid decrease in photocurrents with increasing illumination frequency. Crystals with lower x exhibit a faster decrease in photocurrent. However, pure GaSe crystal maintains its photocurrent significantly even at high frequencies. Measurements for laser-power-dependent photoresponsivity and bias-voltage-dependent photoresponsivity also indicate an increase in the photoresponsivity of GaS1-xSex as x increases. Overall, the photoresponsive performance of GaS1-xSex is enhanced with increasing x, and pure GaSe exhibits the best performance. This result contradicts the findings of previous reports. Additionally, the inverse trends between bandgap and photoresponsivity with increasing x suggest that GaS1-xSex-based photodetectors could potentially offer a high response and wavelength-selectivity for UV and visible light detection. Thus, this work provides novel insights into the photoelectric characteristics of GaS1-xSex layered crystals and highlights their potential for optoelectronic applications.
Collapse
Affiliation(s)
- Yu-Tai Shih
- Department of Physics, National Changhua University of Education, Changhua 500207, Taiwan; (Y.-T.S.); (Y.-M.K.)
| | - Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua 500208, Taiwan
| | - Bo-Chang Tseng
- Graduate Institute of Photonics, National Changhua University of Education, Changhua 500207, Taiwan
| | - Ting-Chen Huang
- Department of Physics, National Changhua University of Education, Changhua 500207, Taiwan; (Y.-T.S.); (Y.-M.K.)
| | - Yee-Mou Kao
- Department of Physics, National Changhua University of Education, Changhua 500207, Taiwan; (Y.-T.S.); (Y.-M.K.)
| | - Ming-Cheng Kao
- Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan;
| | - Sheng-Beng Hwang
- Department of Electronic Engineering, Chienkuo Technology University, Changhua 500020, Taiwan;
| |
Collapse
|
7
|
Shcherbakov D, Voigt G, Memaran S, Liu GB, Wang Q, Watanabe K, Taniguchi T, Smirnov D, Balicas L, Zhang F, Lau CN. Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells. NANO LETTERS 2024; 24:3851-3857. [PMID: 38502010 DOI: 10.1021/acs.nanolett.3c04121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
A two-dimensional (2D) quantum electron system is characterized by quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the intersubband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also the out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors, and modulators.
Collapse
Affiliation(s)
- Dmitry Shcherbakov
- Department of Physics, The Ohio State University, Columbus, Ohio 43221, United States
| | - Greyson Voigt
- Department of Physics, The Ohio State University, Columbus, Ohio 43221, United States
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Gui-Bin Liu
- School of Physics, Beijing Institute of Technology, 100081 Beijing, China
| | - Qiyue Wang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, Ohio 43221, United States
| |
Collapse
|
8
|
Feria DN, Huang QZ, Yeh CS, Lin SX, Lin DY, Tseng BC, Lian JT, Lin TY. Facile synthesis of β-Ga 2O 3based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides. NANOTECHNOLOGY 2024; 35:125603. [PMID: 38064741 DOI: 10.1088/1361-6528/ad13bf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Accepted: 12/08/2023] [Indexed: 01/05/2024]
Abstract
Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizingβ-Ga2O3via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesizedβ-Ga2O3was fabricated as thin film transistors (TFT). Theβ-Ga2O3TFT fabricated exhibits remarkable electron mobility (1.28 cm2Vs-1) and a good current ratio (Ion/Ioff) of 2.06 × 105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene inβ-Ga2O3TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that theβ-Ga2O3networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.
Collapse
Affiliation(s)
- Denice Navat Feria
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Qi-Zhi Huang
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Chun-Shao Yeh
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Shi-Xian Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua, 500207, Taiwan
| | - Bo-Chang Tseng
- Graduate Institute of Photonics, National Changhua University of Education, Changhua, 500207, Taiwan
| | - Jan-Tian Lian
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Tai-Yuan Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| |
Collapse
|
9
|
Saha A, Yadav R, Aldakov D, Reiss P. Gallium Sulfide Quantum Dots with Zinc Sulfide and Alumina Shells Showing Efficient Deep Blue Emission. Angew Chem Int Ed Engl 2023; 62:e202311317. [PMID: 37735098 DOI: 10.1002/anie.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Revised: 09/20/2023] [Accepted: 09/20/2023] [Indexed: 09/23/2023]
Abstract
Solution-processed quantum dot (QD) based blue emitters are of paramount importance in the field of optoelectronics. Despite large research efforts, examples of efficient deep blue/near UV-emitting QDs remain rare due to lack of luminescent wide band gap materials and high defect densities in the existing ones. Here, we introduce a novel type of QDs based on heavy metal free gallium sulfide (Ga2 S3 ) and their core/shell heterostructures Ga2 S3 /ZnS as well as Ga2 S3 /ZnS/Al2 O3 . The photoluminescence (PL) properties of core Ga2 S3 QDs exhibit various decay pathways due to intrinsic defects, resulting in a broad overall PL spectrum. We show that the overgrowth of the Ga2 S3 core QDs with a ZnS shell results in the suppression of the intrinsic defect-mediated states leading to efficient deep-blue emission at 400 nm. Passivation of the core/shell structure with amorphous alumina yields a further enhancement of the PL quantum yield approaching 50 % and leads to an excellent optical and colloidal stability. Finally, we develop a strategy for the aqueous phase transfer of the obtained QDs retaining 80 % of the initial fluorescence intensity.
Collapse
Affiliation(s)
- Avijit Saha
- IRIG-SyMMES, Univ. Grenoble Alpes, INP, CEA, CNRS, 38000, Grenoble, France
| | - Ranjana Yadav
- IRIG-SyMMES, Univ. Grenoble Alpes, INP, CEA, CNRS, 38000, Grenoble, France
| | - Dmitry Aldakov
- IRIG-SyMMES, Univ. Grenoble Alpes, INP, CEA, CNRS, 38000, Grenoble, France
| | - Peter Reiss
- IRIG-SyMMES, Univ. Grenoble Alpes, INP, CEA, CNRS, 38000, Grenoble, France
| |
Collapse
|
10
|
Sprincean V, Leontie L, Caraman I, Lupan O, Adeling R, Gurlui S, Carlescu A, Doroftei C, Caraman M. Preparation, Chemical Composition, and Optical Properties of ( β-Ga 2O 3 Composite Thin Films)/(GaS xSe 1-x Lamellar Solid Solutions) Nanostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2052. [PMID: 37513063 PMCID: PMC10385481 DOI: 10.3390/nano13142052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/04/2023] [Accepted: 07/10/2023] [Indexed: 07/30/2023]
Abstract
GaSxSe1-x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by splitting, plan-parallel lamellae with atomically smooth surfaces. By heat treatment in a normal or water vapor-enriched atmosphere, their plates are covered with a layer consisting of β-Ga2O3 nanowires/nanoribbons. In this work, the elemental and chemical composition, surface morphology, as well as optical, photoluminescent, and photoelectric properties of β-Ga2O3 layer formed on GaSxSe1-x (0 ≤ x ≤ 1) solid solutions (as substrate) are studied. The correlation is made between the composition (x) of the primary material, technological preparation conditions of the oxide-semiconducting layer, and the optical, photoelectric, and photoluminescent properties of β-Ga2O3 (nanosized layers)/GaSxSe1-x structures. From the analysis of the fundamental absorption edge, photoluminescence, and photoconductivity, the character of the optical transitions and the optical band gap in the range of 4.5-4.8 eV were determined, as well as the mechanisms behind blue-green photoluminescence and photoconductivity in the fundamental absorption band region. The photoluminescence bands in the blue-green region are characteristic of β-Ga2O3 nanowires/nanolamellae structures. The photoconductivity of β-Ga2O3 structures on GaSxSe1-x solid solution substrate is determined by their strong fundamental absorption. As synthesized structures hold promise for potential applications in UV receivers, UV-C sources, gas sensors, as well as photocatalytic decomposition of water and organic pollutants.
Collapse
Affiliation(s)
- Veaceslav Sprincean
- Faculty of Physics and Engineering, Moldova State University, 60 Alexei Mateevici Str., MD-2009 Chisinau, Moldova
| | - Liviu Leontie
- Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, RO-700506 Iasi, Romania
| | - Iuliana Caraman
- Faculty of Physics and Engineering, Moldova State University, 60 Alexei Mateevici Str., MD-2009 Chisinau, Moldova
| | - Oleg Lupan
- Center for Nanotechnology and Nanosensors, Department of Microelectronics and Biomedical Engineering, Technical University of Moldova, 168, Stefan cel Mare Av., MD-2004 Chisinau, Moldova
- Functional Nanomaterials, Faculty of Engineering, Institute for Materials Science, Kiel University, Kaiserstr. 2, D-24143 Kiel, Germany
| | - Rainer Adeling
- Functional Nanomaterials, Faculty of Engineering, Institute for Materials Science, Kiel University, Kaiserstr. 2, D-24143 Kiel, Germany
| | - Silviu Gurlui
- Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, RO-700506 Iasi, Romania
| | - Aurelian Carlescu
- Integrated Center for Studies in Environmental Science for The North-East Region (CERNESIM), Department of Exact Sciences, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, RO-700506 Iasi, Romania
| | - Corneliu Doroftei
- Integrated Center for Studies in Environmental Science for The North-East Region (CERNESIM), Department of Exact Sciences, Institute of Interdisciplinary Research, Alexandru Ioan Cuza University of Iasi, RO-700506 Iasi, Romania
| | - Mihail Caraman
- Faculty of Physics and Engineering, Moldova State University, 60 Alexei Mateevici Str., MD-2009 Chisinau, Moldova
| |
Collapse
|
11
|
Abderrahmane A, Senouci K, Hachemi B, Ko PJ. 2D Gallium Sulfide-Based 1D Photonic Crystal Biosensor for Glucose Concentration Detection. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4621. [PMID: 37444934 DOI: 10.3390/ma16134621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Revised: 06/19/2023] [Accepted: 06/24/2023] [Indexed: 07/15/2023]
Abstract
Unidimensional photonic crystal-based biosensors have gained much attention in the area of blood glucose measurement. In this paper, we propose two novel designs based on two-dimensional (2D) Van der Waals materials. The first 1D photonic crystal design consists of multilayers of 2D gallium sulfide and 2D muscovite mica [GaS/Mica]ND[GaS/Mica]N, and the second design consists of multilayers of 2D gallium sulfide [GaS/G]ND[GaS/G]N. We conducted a numerical analysis using the transfer matrix method to investigate the properties of photonic crystals, both with and without defect layers, in order to assess their suitability for biosensing applications. The biosensors' performances were investigated as a function of glucose concentration, revealing a high sensitivity of 832 nm/RIU, a notable figure-of-merit of 1.46 × 105 RIU-1, a Q-factor exceeding 105, and a minimum limit of detection of 3.4 × 10-7 RIU. Finally, we modified the [GaS/G]ND[GaS/G]Nstructure in order to enhance the sensitivity nearly 5-fold. The proposed biosensors offer the advantage of being label-free, making them promising platforms for the sensitive and reliable detection of blood glucose levels.
Collapse
Affiliation(s)
- Abdelkader Abderrahmane
- Department of Electrical Engineering, Chosun University, 375, Seosuk-dong, Dong-gu, Gwangju 501-759, Republic of Korea
- Laboratoire de Structure, Elaboration et Application des Matériaux Moléculaires (SEA2M), Université Abdelhamid Ibn Badis Mostaganem, B.P. 227, Mostaganem 27000, Algeria
| | - Khaled Senouci
- Laboratoire de Structure, Elaboration et Application des Matériaux Moléculaires (SEA2M), Université Abdelhamid Ibn Badis Mostaganem, B.P. 227, Mostaganem 27000, Algeria
| | - Belkacem Hachemi
- Division Architecture et Système Multimédia, Centre de Développement des Technologies Avancées, Alger 16000, Algeria
| | - Pil Ju Ko
- Department of Electrical Engineering, Chosun University, 375, Seosuk-dong, Dong-gu, Gwangju 501-759, Republic of Korea
| |
Collapse
|
12
|
Aitzhanov M, Guseinov N, Nemkayeva R, Sagidolda Y, Tolepov Z, Prikhodko O, Mukhametkarimov Y. Growth and Liquid-Phase Exfoliation of GaSe 1-xS x Crystals. MATERIALS (BASEL, SWITZERLAND) 2022; 15:7080. [PMID: 36295149 PMCID: PMC9605154 DOI: 10.3390/ma15207080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 09/17/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
In recent years, interest in the liquid-phase exfoliation (LPE) of layered crystals has been growing due to the efficiency and scalability of the method, as well as the wide range of practical applications of the obtained dispersions based on two-dimensional flakes. In this paper, we present a comparative study of as-grown and liquid-phase exfoliated GaSe1-xSx flakes. Bulk GaSe1-xSx crystals with x ~ 0, 0.25, 0.5, 0.75, 1 were synthesized by melting stoichiometric amounts of gallium, selenium, and sulfur particles in evacuated ampoules. X-ray diffraction analysis showed that the crystal structure does not change considerably after LPE, while the analysis of the Raman spectra revealed that, after liquid-phase processing in IPA, an additional peak associated with amorphous selenium is observed in selenium-rich GaSeS compounds. Nevertheless, the direct and indirect transition energies determined from the Kubelka-Munk function for LPE crystals correlate with the band gap of the as-grown bulk GaSeS crystals. This finding is also confirmed by comparison with the data on the positions of the photoluminescence peak.
Collapse
|
13
|
Ahmed S, Cheng PK, Qiao J, Gao W, Saleque AM, Al Subri Ivan MN, Wang T, Alam TI, Hani SU, Guo ZL, Yu SF, Tsang YH. Nonlinear Optical Activities in Two-Dimensional Gallium Sulfide: A Comprehensive Study. ACS NANO 2022; 16:12390-12402. [PMID: 35876327 DOI: 10.1021/acsnano.2c03566] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The nonlinear optical (NLO) properties of two-dimensional (2D) materials are fascinating for fundamental physics and optoelectronic device development. However, relatively few investigations have been conducted to establish the combined NLO activities of a 2D material. Herein, a study of numerous NLO properties of 2D gallium sulfide (GaS), including second-harmonic generation (SHG), two-photon excited fluorescence (TPEF), and NLO absorption are presented. The layer-dependent SHG response of 2D GaS identifies the noncentrosymmetric nature of the odd layers, and the second-order susceptibility (χ2) value of 47.98 pm/V (three-layers of GaS) indicates the superior efficiency of the SHG signal. In addition, structural deformation induces the symmetry breaking and facilitates the SHG in the bulk samples, whereas a possible efficient symmetry breaking in the liquid-phase exfoliated samples results in an enhancement of the SHG signal, providing prospective fields of investigation for researchers. The generation of TPEF from 800 to 860 nm depicts the two-photon absorption characteristics of 2D GaS material. Moreover, the saturable absorption characteristics of 2D GaS are realized from the largest nonlinear absorption coefficient (β) of -9.3 × 103, -91.0 × 103, and -6.05 × 103 cm/GW and giant modulation depths (Ts) of 24.4%, 35.3%, and 29.1% at three different wavelengths of 800, 1066, and 1560 nm, respectively. Hence, such NLO activities indicate that 2D GaS material can facilitate in the technical advancements of future nonlinear optoelectronic devices.
Collapse
Affiliation(s)
- Safayet Ahmed
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Ping Kwong Cheng
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Junpeng Qiao
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
- Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Research Institute of Laser, Qufu Normal University, Qufu 273165, China
| | - Wei Gao
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Ahmed Mortuza Saleque
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Md Nahian Al Subri Ivan
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Ting Wang
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- College of Materials and Chemistry and Chemical Engineering, Chengdu University of Technology, Chengdu 610059, China
| | - Tawsif Ibne Alam
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Sumaiya Umme Hani
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Zong Liang Guo
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Siu Fung Yu
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Yuen Hong Tsang
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| |
Collapse
|
14
|
Gutiérrez Y, Juan D, Dicorato S, Santos G, Duwe M, Thiesen PH, Giangregorio MM, Palumbo F, Hingerl K, Cobet C, García-Fernández P, Junquera J, Moreno F, Losurdo M. Layered gallium sulfide optical properties from monolayer to CVD crystalline thin films. OPTICS EXPRESS 2022; 30:27609-27622. [PMID: 36236929 DOI: 10.1364/oe.459815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Accepted: 06/03/2022] [Indexed: 06/16/2023]
Abstract
Interest in layered van der Waals semiconductor gallium monosulfide (GaS) is growing rapidly because of its wide band gap value between those of two-dimensional transition metal dichalcogenides and of insulating layered materials such as hexagonal boron nitride. For the design of envisaged optoelectronic, photocatalytic and photonic applications of GaS, the knowledge of its dielectric function is fundamental. Here we present a combined theoretical and experimental investigation of the dielectric function of crystalline 2H-GaS from monolayer to bulk. Spectroscopic imaging ellipsometry with micron resolution measurements are corroborated by first principle calculations of the electronic structure and dielectric function. We further demonstrate and validate the applicability of the established dielectric function to the analysis of the optical response of c-axis oriented GaS layers grown by chemical vapor deposition (CVD). These optical results can guide the design of novel, to our knowledge, optoelectronic and photonic devices based on low-dimensional GaS.
Collapse
|
15
|
Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
Collapse
Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| |
Collapse
|
16
|
Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS. NANOMATERIALS 2022; 12:nano12030465. [PMID: 35159811 PMCID: PMC8840567 DOI: 10.3390/nano12030465] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/24/2021] [Revised: 01/25/2022] [Accepted: 01/26/2022] [Indexed: 12/12/2022]
Abstract
From the group-III monochalcogenide (MX, M = Ga, In; X = S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm have been obtained by mechanical exfoliation to study the interplay between structural, morphological, optical, and photoresponsivity properties as a function of thickness. This interplay has been established by analyzing the structure through Raman spectroscopy and X-ray diffraction, the morphology through scanning electron microscopy and atomic force microscopy, the density and optical properties through spectroscopic ellipsometry, and the photoresponsivity through current–voltage measurements under UV light. This work shows that photoresponsivity increases with increases in GaS thickness, resulting in a UV photoresponsivity of 1.5·10−4 AW−1 stable over several on/off cycles.
Collapse
|
17
|
Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation. NANOMATERIALS 2022; 12:nano12030378. [PMID: 35159722 PMCID: PMC8839219 DOI: 10.3390/nano12030378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2021] [Revised: 01/04/2022] [Accepted: 01/21/2022] [Indexed: 02/04/2023]
Abstract
Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.
Collapse
|
18
|
Zhao CX, Wang JQ, Cai XL, Wang P, Zhu Z, Niu C, Jia Y. Structural, Electronic and Optical Properties of four α-Se-based Heterostructures with Hyperbolic Characteristics. Phys Chem Chem Phys 2022; 24:21674-21687. [DOI: 10.1039/d2cp02165j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The physical properties and potential applications of two-dimensional (2D) materials can be effectively modulated and enriched by constructing van der Waals heterostructures (VDWHs) with two or more 2D monolayer materials....
Collapse
|
19
|
Wu J, Wang F, Li H, Yang S, Li P, Zhao Y, Li Y, Zhai T. Epitaxial Growth of 2D Ultrathin Metastable γ-Bi 2 O 3 Flakes for High Performance Ultraviolet Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104244. [PMID: 34741412 DOI: 10.1002/smll.202104244] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 09/13/2021] [Indexed: 06/13/2023]
Abstract
Ultraviolet detection is of great significance due to its wide applications in the missile tracking, flame detecting, pollution monitoring, and so on. The nonlayered semiconductor γ-Bi2 O3 is a promising candidate toward high-performance UV detection due to the wide bandgap, excellent light sensitivity, environmental stability, nontoxic and elemental abundance properties. However, controllable preparation of ultrathin 2D γ-Bi2 O3 flakes remains a challenge, owing to its nonlayered structure, metastable nature, and other competing phases. Moreover, the UV photodetectors based on 2D γ-Bi2 O3 flake have not been implemented yet. Here, ultrathin (down to 4.8 nm) 2D γ-Bi2 O3 flakes with high crystal quality are obtained via a van der Waals epitaxy method. The as-synthesized single-crystalline γ-Bi2 O3 flakes show a body-centered cubic structure and grown along (111) lattice plane as revealed by experimental observations. More importantly, photodetectors based on the as-synthesized 2D γ-Bi2 O3 flakes exhibit promising UV detection ability, including a responsivity of 64.5 A W-1 , a detectivity of 1.3 × 1013 Jones, and an ultrafast response speed (τrise ≈ 290 µs and τdecay ≈ 870 µs) at 365 nm, suggesting its great potential for various optoelectronic applications.
Collapse
Affiliation(s)
- Jie Wu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haobo Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengyu Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| |
Collapse
|
20
|
Lu Y, Chen T, Mkhize N, Chang RJ, Sheng Y, Holdway P, Bhaskaran H, Warner JH. GaS:WS 2 Heterojunctions for Ultrathin Two-Dimensional Photodetectors with Large Linear Dynamic Range across Broad Wavelengths. ACS NANO 2021; 15:19570-19580. [PMID: 34860494 DOI: 10.1021/acsnano.1c06587] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) photodetectors based on photovoltaic effect or photogating effect can hardly achieve both high photoresponsivity and large linear dynamic range at the same time, which greatly limits many practical applications such as imaging sensors. Here, the conductive-sensitizer strategy, a general design for improving photoresponsivity and linear dynamic range in 2D photodetectors is provided and experimentally demonstrated on vertically stacked bilayer WS2/GaS0.87 under a parallel circuit mode. Owing to successful band alignment engineering, the isotype type-II heterojunction enables efficient charge carrier transfer from WS2, the high-mobility sensitizer, to GaS0.87, the low-mobility channel, under illumination from a broad visible spectrum. The transferred electron charges introduce a reverse electric field which efficiently lowers the band offset between the two materials, facilitating a transition from low-mobility photocarrier transport to high-mobility photocarrier transport with increasing illumination power. We achieved a large linear dynamic range of 73 dB as well as a high and constant photoresponsivity of 13 A/W under green light. X-ray photoelectron spectroscopy, cathodoluminescence, and Kelvin probe force microscopy further identify the key role of defects in monolayer GaS0.87 in engineering the band alignment with monolayer WS2. This work proposes a design route based on band and interface modulation for improving performance of 2D photodetectors and provides deep insights into the important role of strong interlayer coupling in offering heterostructures with desired properties and functions.
Collapse
Affiliation(s)
- Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Tongxin Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Nhlakanipho Mkhize
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yuewen Sheng
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Philip Holdway
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Harish Bhaskaran
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| |
Collapse
|
21
|
Gutiérrez Y, Giangregorio MM, Dicorato S, Palumbo F, Losurdo M. Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide. Front Chem 2021; 9:781467. [PMID: 34869230 PMCID: PMC8640485 DOI: 10.3389/fchem.2021.781467] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Accepted: 10/15/2021] [Indexed: 11/13/2022] Open
Abstract
Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interestingly, when going to the few-layer regime, changes in the electronic structure occur, resulting in a change in the properties of the material. Therefore, a systematic study on the thickness dependence of the different properties of GaS is needed. Here, we analyze mechanically exfoliated GaS layers transferred to glass substrates. Specifically, we report the dependence of the Raman spectra, photoluminescence, optical transmittance, resistivity, and work function on the thickness of GaS. Those findings can be used as guidance in designing devices based on GaS.
Collapse
Affiliation(s)
- Yael Gutiérrez
- Institute of Nanotechnology, CNR-NANOTEC, c/o Dipartimento di Chimica, Università di Bari, Bari, Italy
| | - Maria M Giangregorio
- Institute of Nanotechnology, CNR-NANOTEC, c/o Dipartimento di Chimica, Università di Bari, Bari, Italy
| | - Stefano Dicorato
- Institute of Nanotechnology, CNR-NANOTEC, c/o Dipartimento di Chimica, Università di Bari, Bari, Italy
| | - Fabio Palumbo
- Institute of Nanotechnology, CNR-NANOTEC, c/o Dipartimento di Chimica, Università di Bari, Bari, Italy
| | - Maria Losurdo
- Institute of Nanotechnology, CNR-NANOTEC, c/o Dipartimento di Chimica, Università di Bari, Bari, Italy
| |
Collapse
|
22
|
Wines D, Saritas K, Ataca C. A pathway toward high-throughput quantum Monte Carlo simulations for alloys: A case study of two-dimensional (2D) GaS xSe 1-x. J Chem Phys 2021; 155:194112. [PMID: 34800964 DOI: 10.1063/5.0070423] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The study of alloys using computational methods has been a difficult task due to the usually unknown stoichiometry and local atomic ordering of the different structures experimentally. In order to combat this, first-principles methods have been coupled with statistical methods such as the cluster expansion formalism in order to construct the energy hull diagram, which helps to determine if an alloyed structure can exist in nature. Traditionally, density functional theory (DFT) has been used in such workflows. In this paper, we propose to use chemically accurate many-body variational Monte Carlo (VMC) and diffusion Monte Carlo (DMC) methods to construct the energy hull diagram of an alloy system due to the fact that such methods have a weaker dependence on the starting wavefunction and density functional, scale similarly to DFT with the number of electrons, and have had demonstrated success for a variety of materials. To carry out these simulations in a high-throughput manner, we propose a method called Jastrow sharing, which involves recycling the optimized Jastrow parameters between alloys with different stoichiometries. We show that this eliminates the need for extra VMC Jastrow optimization calculations and results in significant computational cost savings (on average 1/4 savings of total computational time). Since it is a novel post-transition metal chalcogenide alloy series that has been synthesized in its few-layer form, we used monolayer GaSxSe1-x as a case study for our workflow. By extensively testing our Jastrow sharing procedure for monolayer GaSxSe1-x and quantifying the cost savings, we demonstrate how a pathway toward chemically accurate high-throughput simulations of alloys can be achieved using many-body VMC and DMC methods.
Collapse
Affiliation(s)
- Daniel Wines
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
| | - Kayahan Saritas
- Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA
| | - Can Ataca
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
| |
Collapse
|
23
|
Niranjan MK, Ghosh A. Theoretical investigation of lattice dynamics, infrared reflectivity, polarized Raman spectra and nature of interlayer coupling in two-dimensional layered gallium sulfide. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:405001. [PMID: 34256354 DOI: 10.1088/1361-648x/ac13fa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
Gallium sulfide (GaS) is a highly promising two-dimensional layered semiconductor owing to its remarkable thickness dependent electronic and physical properties. In this article, we perform a comprehensiveab initiostudy of lattice dynamics, mode symmetry assignments, polarized Raman and infrared (IR) reflectivity spectra of GaS system. Polarized Raman spectra are obtained for different light polarization set-ups of incoming and scattered light. The frequencies of all allowed vibrational modes at the zone-centre are calculated and symmetry labels are assigned. Furthermore, the variation of frequencies & intensities of Raman/IR active modes of ultrathin GaS films (few layers) as function of film thickness is studied. In addition, we also explore the nature of weak interlayer coupling in GaS. The weak forces between the GaS layers are usually assumed to be due to interlayer van der Waals (vdW) interaction. However, this assumption has not been reasonably explained in reported experimental studies. Our study strongly suggests that weak interlayer interactions in GaS may be primarily electrostatic (Coulomb) in nature and therefore the contribution of vdW interactions to layer-layer coupling and lattice dynamics may be significantly lower than that of electrostatic interaction. The suggested nature of interlayer coupling in GaS and related III-VI semiconductors may have important implications in determination of their various physical properties.
Collapse
Affiliation(s)
- Manish K Niranjan
- Department of Physics, Indian Institute of Technology, Hyderabad, India
| | - Arghya Ghosh
- Department of Physics, Indian Institute of Technology, Hyderabad, India
| |
Collapse
|
24
|
Zou Z, Liang J, Zhang X, Ma C, Xu P, Yang X, Zeng Z, Sun X, Zhu C, Liang D, Zhuang X, Li D, Pan A. Liquid-Metal-Assisted Growth of Vertical GaSe/MoS 2 p-n Heterojunctions for Sensitive Self-Driven Photodetectors. ACS NANO 2021; 15:10039-10047. [PMID: 34036786 DOI: 10.1021/acsnano.1c01643] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals (vdW) vertical p-n junctions based on two-dimensional (2D) materials have shown great potential in flexible, self-driven, high-efficiency electronic and optoelectronic applications. However, due to the complex nucleation dynamics, the controllable synthesis of vertical heterostructures remains a daunting challenge. Here, we report the controlled growth of vertical GaSe/MoS2 p-n heterojunctions via a liquid gallium (Ga)-assisted chemical vapor deposition method. The growth mechanism can be interpreted by theoretical calculations based on the Burton-Cabrera-Frank theory. By analyzing the diffusion barriers and the Ehrlich-Schwoebel barriers of adatoms, we found that the growth modes between vertical and lateral can be precisely switched by means of adjusting the amount of Ga. Based on the achieved high-quality vertical GaSe/MoS2 p-n heterojunctions, photosensing devices are further designed and systematically investigated. Upon light illumination, prominent photovoltaic effects with large open-circuit voltage (0.61 V) and broadband detection capability from 375 to 633 nm are observed, which can further be employed for self-powered photodetection with high responsivity (900 mA/W) and fast response speed (5 ms). The developed liquid-metal-assisted strategy provides an effective method for controllable synthesis of vdW heterostructures and will give impetus to their applications in high-performance optoelectronic device.
Collapse
Affiliation(s)
- Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Junwu Liang
- School of Physics and Telecommunication Engineering, Yulin Normal University, Yulin, Guangxi 537000, P.R. China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Pan Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| |
Collapse
|
25
|
Khan R, Rahman AU, Zhang Q, Kratzer P, Ramay SM. First-principles computational exploration of ferromagnetism in monolayer GaS via substitutional doping. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:314003. [PMID: 34034249 DOI: 10.1088/1361-648x/ac04ce] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 05/25/2021] [Indexed: 06/12/2023]
Abstract
Using first-principles calculations, functionalization of the monolayer-GaS crystal structure through N or Cr-doping at all possible lattice sites has been investigated. Our results show that pristine monolayer-GaS is an indirect-bandgap, non-magnetic semiconductor. The bandgap can be tuned and a magnetic moment (MM) can be induced by the introduction of N or Cr atomic anion/cation doping in monolayer GaS. For instance, the intrinsic character of monolayer GaS can be changed by substitution of N for the S-site to p-type, while substitution of Cr at the S-site or Ga-site induces half-metallicity at sufficiently high concentrations. The defect states are located in the electronic bandgap region of the GaS monolayer. These findings help to extend the application of monolayer-GaS structures in nano-electronics and spintronics. Since the S-sites at the surface are more easily accessible to doping in experiment, we chose the S-site for further investigations. Finally, we perform calculations with ferromagnetic (FM) and antiferromagnetic (AFM) alignment of the MMs at the dopants. For pairs of impurities of the same species at low concentrations we find Cr atoms to prefer the FM state, while N atoms prefer the AFM state, both for impurities on opposite surfaces of the GaS monolayer and for impurities sharing a common Ga neighbor sitting at the same surface. Extending our study to higher concentrations of Cr atoms, we find that clusters of four Cr atoms prefer AFM coupling, whereas the FM coupling is retained for Cr atoms at larger distance arranged on a honeycomb lattice. For the latter arrangement, we estimate the FM Curie temperatureTCto be 241 K. We conclude that the Cr-doped monolayer-GaS crystal structure offers enhanced electronic and magnetic properties and is an appealing candidate for spintronic devices operating close to room temperature.
Collapse
Affiliation(s)
- Rashid Khan
- School of Energy and Power Engineering, Xi'an Jiaotong University (XJTU), 28 Xianning W.Rd., Xi'an 710049, People's Republic of China
| | - Altaf Ur Rahman
- Department of Physics, Riphah International University, Lahore, Pakistan
| | - Qingmin Zhang
- School of Energy and Power Engineering, Xi'an Jiaotong University (XJTU), 28 Xianning W.Rd., Xi'an 710049, People's Republic of China
| | - Peter Kratzer
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg, Germany
| | - Shahid M Ramay
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh, Saudi Arabia
| |
Collapse
|
26
|
Zappia M, Bianca G, Bellani S, Curreli N, Sofer Z, Serri M, Najafi L, Piccinni M, Oropesa-Nuñez R, Marvan P, Pellegrini V, Kriegel I, Prato M, Cupolillo A, Bonaccorso F. Two-Dimensional Gallium Sulfide Nanoflakes for UV-Selective Photoelectrochemical-type Photodetectors. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:11857-11866. [PMID: 34276861 PMCID: PMC8279705 DOI: 10.1021/acs.jpcc.1c03597] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe, GeSe, and many other monochalcogenides, bulk GaS has a large band gap of ∼2.5 eV, which increases up to more than 3.0 eV with decreasing its thickness due to quantum confinement effects. Therefore, 2D GaS fills the void between 2D small-band-gap semiconductors and insulators, resulting of interest for the realization of van der Waals type-I heterojunctions in photocatalysis, as well as the development of UV light-emitting diodes, quantum wells, and other optoelectronic devices. Based on theoretical calculations of the electronic structure of GaS as a function of layer number reported in the literature, we experimentally demonstrate, for the first time, the PEC properties of liquid-phase exfoliated GaS nanoflakes. Our results indicate that solution-processed 2D GaS-based PEC-type photodetectors outperform the corresponding solid-state photodetectors. In fact, the 2D morphology of the GaS flakes intrinsically minimizes the distance between the photogenerated charges and the surface area at which the redox reactions occur, limiting electron-hole recombination losses. The latter are instead deleterious for standard solid-state configurations. Consequently, PEC-type 2D GaS photodetectors display a relevant UV-selective photoresponse. In particular, they attain responsivities of 1.8 mA W-1 in 1 M H2SO4 [at 0.8 V vs reversible hydrogen electrode (RHE)], 4.6 mA W-1 in 1 M Na2SO4 (at 0.9 V vs RHE), and 6.8 mA W-1 in 1 M KOH (at 1.1. V vs RHE) under 275 nm illumination wavelength with an intensity of 1.3 mW cm-2. Beyond the photodetector application, 2D GaS-based PEC-type devices may find application in tandem solar PEC cells in combination with other visible-sensitive low-band-gap materials, including transition-metal monochalcogenides recently established for PEC solar energy conversion applications.
Collapse
Affiliation(s)
- Marilena
I. Zappia
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C, 87036 Rende, CS, Italy
| | - Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Sebastiano Bellani
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Nicola Curreli
- Functional
Nanosystems, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova, Italy
| | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Leyla Najafi
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Marco Piccinni
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Department
of Material Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Petr Marvan
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Ilka Kriegel
- Functional
Nanosystems, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Materials
Characterization Facility, Istituto Italiano di Tecnologia, via Morego 30, Genova 16163, Italy
| | - Anna Cupolillo
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C, 87036 Rende, CS, Italy
| | - Francesco Bonaccorso
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| |
Collapse
|
27
|
Sutter P, French JS, Khosravi Khorashad L, Argyropoulos C, Sutter E. Optoelectronics and Nanophotonics of Vapor-Liquid-Solid Grown GaSe van der Waals Nanoribbons. NANO LETTERS 2021; 21:4335-4342. [PMID: 33955765 DOI: 10.1021/acs.nanolett.1c00891] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
2D/layered semiconductors are of interest for fundamental studies and for applications in optoelectronics and photonics. Work to date focused on extended crystals, produced by exfoliation or growth and investigated by diffraction-limited spectroscopy. Processes such as vapor-liquid-solid (VLS) growth carry potential for mass-producing nanostructured van der Waals semiconductors with exceptionally high crystal quality and optoelectronic/photonic properties at least on par with those of extended flakes. Here, we demonstrate the synthesis, structure, morphology, and optoelectronics/photonics of GaSe van der Waals nanoribbons obtained by Au- and Ag-catalyzed VLS growth. Although all GaSe ribbons are high-quality basal-plane oriented single crystals, those grown at lower temperatures stand out with their remarkably uniform morphology and low edge roughness. Photoluminescence spectroscopy shows intense, narrow light emission at the GaSe bandgap energy. Nanophotonic experiments demonstrate traveling waveguide modes at visible/near-infrared energies and illustrate approaches for locally exciting and probing such photonic modes by cathodoluminescence in transmission electron microscopy.
Collapse
Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Jacob S French
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Larousse Khosravi Khorashad
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Christos Argyropoulos
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| |
Collapse
|
28
|
Yan H, Liang X, Dong S, Lei Y, Zhang G, Chen R, Hu J, Jing M, Wang S, Su X, Qin C, Xiao L, Jia S. Exploration of exciton dynamics in GaTe nanoflakes via temperature- and power-dependent time-resolved photoluminescence spectra. OPTICS EXPRESS 2021; 29:8880-8889. [PMID: 33820329 DOI: 10.1364/oe.418749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Accepted: 02/27/2021] [Indexed: 06/12/2023]
Abstract
GaTe nanoflakes have been receiving much research attention recently due to their applications in optoelectronic devices, such as anisotropic non-volatile memory, solar cells, and high-sensitivity photodetectors from the ultraviolet to the visible region. Further applications, however, have been impeded due to the limited understanding of their exciton dynamics. In this work we perform temperature- and power-dependent time-resolved photoluminescence (PL) spectra to comprehensively investigate the exciton dynamics of GaTe nanoflakes. Temperature-dependent PL measurements manifest that spectral profiles of GaTe nanoflakes change dramatically from cryogenic to room temperature, where the bound exciton and donor-to-acceptor pair transition normally disappear above 100 K, while the charged exciton survives to room temperature. The lifetimes of these excitons and their evolution vs temperature have been uncovered by time-resolved PL spectra. Further measurements reveal the entirely different power-dependent exciton behaviors of GaTe nanoflakes between room and cryogenic temperatures. The underlying mechanisms have been proposed to explore the sophisticated exciton dynamics within GaTe nanoflakes. Our results offer a more thorough understanding of the exciton dynamics of GaTe nanoflakes, enabling further progress in engineering GaTe-based applications, such as photodetectors, light-emitting diodes, and nanoelectronics.
Collapse
|
29
|
Promises and prospects of two-dimensional transistors. Nature 2021; 591:43-53. [PMID: 33658691 DOI: 10.1038/s41586-021-03339-z] [Citation(s) in RCA: 282] [Impact Index Per Article: 94.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 12/14/2020] [Indexed: 01/31/2023]
Abstract
Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.
Collapse
|
30
|
Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
Collapse
Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
31
|
Araujo FDV, Oliveira VV, Gadelha AC, Carvalho TCV, Fernandes TFD, Silva FWN, Longuinhos R, Ribeiro-Soares J, Jorio A, Souza Filho AG, Alencar RS, Viana BC. Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide. NANOTECHNOLOGY 2020; 31:495702. [PMID: 32990274 DOI: 10.1088/1361-6528/abb107] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Phonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A[Formula: see text] and A[Formula: see text] Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different [Formula: see text] temperature coefficients. The first-order temperature coefficients θ of A[Formula: see text] mode is ∼ -0.016 cm-1/K, independent of the number of layers and the support. In contrast, the θ of A[Formula: see text] mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm-1 K-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm-1 K-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm-1 K-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.
Collapse
Affiliation(s)
- Francisco D V Araujo
- Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
- Instituto Federal de Educação, Ciência e Tecnologia do Piauí-IFPI, 64760-000, Piauí, Brazil
| | - Victor V Oliveira
- Faculdade de Física, Universidade Federal do Pará, Belém, Pará, 66075-110 Brazil
| | - Andreij C Gadelha
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Thais C V Carvalho
- Departamento de Física, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
| | - Thales F D Fernandes
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Francisco W N Silva
- Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Alcântara, Alcântara, Maranhão, Brazil
| | - R Longuinhos
- Departamento de Física, Universidade Federal de Lavras, Lavras, Minas Gerais, 37200-000, Brazil
| | - Jenaina Ribeiro-Soares
- Departamento de Física, Universidade Federal de Lavras, Lavras, Minas Gerais, 37200-000, Brazil
| | - Ado Jorio
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Antonio G Souza Filho
- Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, Ceará, 60455-900, Brazil
| | - Rafael S Alencar
- Faculdade de Física, Universidade Federal do Pará, Belém, Pará, 66075-110 Brazil
| | - Bartolomeu C Viana
- Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
- Departamento de Física, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
| |
Collapse
|
32
|
Wines D, Saritas K, Ataca C. A first-principles Quantum Monte Carlo study of two-dimensional (2D) GaSe. J Chem Phys 2020; 153:154704. [DOI: 10.1063/5.0023223] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023] Open
Affiliation(s)
- Daniel Wines
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
| | - Kayahan Saritas
- Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA
| | - Can Ataca
- Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, USA
| |
Collapse
|
33
|
Choi BK, Ulstrup S, Gunasekera SM, Kim J, Lim SY, Moreschini L, Oh JS, Chun SH, Jozwiak C, Bostwick A, Rotenberg E, Cheong H, Lyo IW, Mucha-Kruczynski M, Chang YJ. Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe 2. ACS NANO 2020; 14:7880-7891. [PMID: 32463224 DOI: 10.1021/acsnano.0c01054] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe2, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe2, in contrast to the 2H materials, the out-of-plane transition metal dz2 and chalcogen pz orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe2 using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe2. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.
Collapse
Affiliation(s)
- Byoung Ki Choi
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| | - Søren Ulstrup
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Surani M Gunasekera
- Centre for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Jiho Kim
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Luca Moreschini
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ji Seop Oh
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Seung-Hyun Chun
- Department of Physics, Sejong University, Seoul 05006, Republic of Korea
| | - Chris Jozwiak
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - In-Whan Lyo
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Marcin Mucha-Kruczynski
- Centre for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| |
Collapse
|
34
|
Ho CH. Ga 2Se 3 Defect Semiconductors: The Study of Direct Band Edge and Optical Properties. ACS OMEGA 2020; 5:18527-18534. [PMID: 32743231 PMCID: PMC7392520 DOI: 10.1021/acsomega.0c02623] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Accepted: 07/06/2020] [Indexed: 06/11/2023]
Abstract
Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III-VI Ga2Se3 has been first observed by micro-photoluminescence (μPL) measurement. The emission peak is at 1.85 eV, which matches well with the band-edge transition that is measured by micro-thermoreflectance (μTR) and micro-transmittance (μTransmittance) for verification of the direct band edge of Ga2Se3. The temperature-dependent μTR spectra of Ga2Se3 show a general semiconductor behavior with its temperature-energy shift following Varshni-type variation. With the well-evident direct band edge, the peak responsivities of photovoltaic response (∼6.2 mV/μW) and photocurrent (∼2.25 μA/μW at f = 30 Hz) of defect zincblende Ga2Se3 can be, respectively, detected at ∼2.22 and ∼1.92 eV from a Cu/Ga2Se3 Schottky solar cell and a Ga2Se3 photoconductor. On the basis of experimental analysis, the optical band edge and photoresponsivity properties of a III-VI Ga2Se3 defect semiconductor are thus realized.
Collapse
Affiliation(s)
- Ching-Hwa Ho
- Graduate Institute of Applied
Science and Technology, National Taiwan
University of Science and Technology, Taipei 106, Taiwan
| |
Collapse
|
35
|
Deák P, Han M, Lorke M, Tabriz MF, Frauenheim T. Intrinsic defects of GaSe. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:285503. [PMID: 32168498 DOI: 10.1088/1361-648x/ab7fdb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
GaSe is a layered semiconductor with an optical band gap tunable by the number of layers in a thin film. This is promising for application in micro/optoelectronics and photovoltaics. However, for that, knowledge about the intrinsic defects are needed, since they may influence device behavior. Here we present a comprehensive study of intrinsic point defects in both bulk and monolayer (ML) GaSe, using an optimized hybrid functional which reproduces the band gap and is Koopmans' compliant. Formation energies and charge transition levels are calculated, the latter in good agreement with available experimental data. We find that the only intrinsic donor is the interlayer gallium interstitial, which is absent in the case of the ML. The vacancies are acceptors, the selenium interstitial is electrically inactive, and small intrinsic defect complexes have formation energies too high to play a role in the electronic properties of samples grown under quasi-equilibrium conditions. Bulk GaSe is well compensated by the intrinsic defects, and is an ideal substrate. The ML is intrinsically p-type, and p-type doping cannot be compensated either. The opening of the band gap changes the defect physics considerably with respect to the bulk.
Collapse
Affiliation(s)
- Peter Deák
- Bremen Center for Computational Materials Sci., University of Bremen, PoB 330440, D-28334 Bremen, Germany
| | | | | | | | | |
Collapse
|
36
|
Sutter E, French JS, Sutter S, Idrobo JC, Sutter P. Vapor-Liquid-Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires. ACS NANO 2020; 14:6117-6126. [PMID: 32369332 DOI: 10.1021/acsnano.0c01919] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Nanowires of layered van der Waals (vdW) crystals are of interest due to structural characteristics and emerging properties that have no equivalent in conventional 3D crystalline nanostructures. Here, vapor-liquid-solid growth, optoelectronics, and photonics of GaS vdW nanowires are studied. Electron microscopy and diffraction demonstrate the formation of high-quality layered nanostructures with different vdW layer orientation. GaS nanowires with vdW stacking perpendicular to the wire axis have ribbon-like morphologies with lengths up to 100 μm and uniform width. Wires with axial layer stacking show tapered morphologies and a corrugated surface due to twinning between successive few-layer GaS sheets. Layered GaS nanowires are excellent wide-bandgap optoelectronic materials with Eg = 2.65 eV determined by single-nanowire absorption measurements. Nanometer-scale spectroscopy on individual nanowires shows intense blue band-edge luminescence along with longer wavelength emissions due to transitions between gap states and photonic properties such as interference of confined waveguide modes propagating within the nanowires. The combined results show promise for applications in electronics, optoelectronics, and photonics, as well as photo- or electrocatalysis owing to a high density of reactive edge sites, and intercalation-type energy storage benefiting from facile access to the interlayer vdW gaps.
Collapse
Affiliation(s)
- Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Jacob S French
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Stephan Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Juan Carlos Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| |
Collapse
|
37
|
Mahmood A, Rahman G. Structural and electronic properties of two-dimensional hydrogenated Xenes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:205501. [PMID: 31945759 DOI: 10.1088/1361-648x/ab6cbd] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Structural and electronic properties of pristine two-dimensional group IV Xenes (X = C, Si, Ge, Sn, Pb) and hydrogenated Xenes are studied, using density functional theory (DFT) calculations with and without spin-orbit coupling (SOC). The pristine hexagonal monolayer Xenes show buckled structure upon relaxation except graphene. The buckling [Formula: see text] increases linearly from graphene to plumbene. The band structures without SOC of group-IV Xenes are semi-metallic. However, inclusion of SOC mainly opens the bandgap at the Dirac point. Semi hydrogenation leads to enhanced buckling in all Xenes which indicate a tendency towards more sp 3 like structures. The electronic structures of semi hydrogenated Xenes do not show Dirac cones. Spin polarized band structures show magnetism with magnetic moment of 1.0 [Formula: see text] and all SH Xenes are magnetic semiconductor except SH plumbene. Full hydrogenation vanishes buckling upon relaxation and the structure becomes planar implying sp 2-like hybridization. The band structures for fully hydrogenated Xenes turns out to be semiconducting and the Dirac cones also disappear. The bandgap changes from indirect to direct at FH stanene, while FH plumbene turns out to be semi-metallic. SOC gives rise to bandgap of 0.47 eV in FH plumbene, which is otherwise a semi-metal.
Collapse
Affiliation(s)
- Asad Mahmood
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
| | | |
Collapse
|
38
|
Li T, Feng J, Liang L, Sun W, Wang X, Wu J, Xu P, Liu M, Ma D. Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates. ACS OMEGA 2020; 5:9550-9557. [PMID: 32363307 PMCID: PMC7191830 DOI: 10.1021/acsomega.0c00864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 04/03/2020] [Indexed: 06/11/2023]
Abstract
Direct growth of single-crystal compound semiconductors on nonepitaxial substrates is a promising route for device processing simplification in electronic and optoelectronic applications. However, the nonepitaxial growth technique for 2D single crystals is still a fundamental challenge. Here, we demonstrate that the macroscopic 2D interface of liquid metals and nonepitaxial solid substrates could be universally designed for the chemical vapor deposition growth of crystalline compound semiconductors. By adopting a sandwiched solid metal/liquid metal/solid substrate environment, millimeter-scale 2D GaS, 2D GaSe, and 1D GaTe single crystals of high quality were synthesized at the interface of liquid gallium and nonepitaxial substrates. Evidence shows that the particle-catalyst-free vapor-liquid-solid growth is driven by screw dislocations. Furthermore, we successfully extend the growth strategy to various metal chalcogenides (Sn, In, Cu, and Ag) and pnictides (Sb). Our work opens up a new route for the direct growth of single-crystalline compound semiconductors on nonepitaxial substrates.
Collapse
Affiliation(s)
- Tian Li
- Department
of Physics, Capital Normal University, Beijing 100048, People’s Republic of China
| | - Jingqi Feng
- Department
of Physics, Capital Normal University, Beijing 100048, People’s Republic of China
| | - Li Liang
- Department
of Physics, Tsinghua University, Beijing 100048, People’s Republic of China
| | - Wenyu Sun
- Department
of Physics, Capital Normal University, Beijing 100048, People’s Republic of China
| | - Xinqi Wang
- Department
of Physics, Capital Normal University, Beijing 100048, People’s Republic of China
| | - Jian Wu
- Department
of Physics, Tsinghua University, Beijing 100048, People’s Republic of China
| | - Peng Xu
- CAS
Key Laboratory of Standardization and Measurement for Nanotechnology,
CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People’s Republic of China
| | - Mengxi Liu
- CAS
Key Laboratory of Standardization and Measurement for Nanotechnology,
CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People’s Republic of China
| | - Donglin Ma
- Department
of Physics, Capital Normal University, Beijing 100048, People’s Republic of China
| |
Collapse
|
39
|
Lim SY, Lee JU, Kim JH, Liang L, Kong X, Nguyen TTH, Lee Z, Cho S, Cheong H. Polytypism in few-layer gallium selenide. NANOSCALE 2020; 12:8563-8573. [PMID: 32248214 DOI: 10.1039/d0nr00165a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Gallium selenide (GaSe) is one of the layered group-III metal monochalcogenides, which has an indirect bandgap in the monolayer and a direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X = S and Se). Four polytypes of bulk GaSe, designated as β-, ε-, γ-, and δ-GaSe, have been reported. Since different polytypes result in different optical and electrical properties even with the same thickness, identifying the polytype is essential in utilizing this material for various optoelectronic applications. We performed polarized Raman measurements on GaSe and found different ultra-low-frequency Raman spectra of inter-layer vibrational modes even with the same thickness due to different stacking sequences of the polytypes. By comparing the ultra-low-frequency Raman spectra with the theoretical calculations and high-resolution electron microscopy measurements, we established the correlation between the ultra-low-frequency Raman spectra and the stacking sequences of trilayer GaSe. We further found that the AB-type stacking is more stable than the AA'-type stacking in GaSe.
Collapse
Affiliation(s)
- Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Korea.
| | | | | | | | | | | | | | | | | |
Collapse
|
40
|
Ho CH, Chiou MC, Herninda TM. Nanowire Grid Polarization and Polarized Excitonic Emission Observed in Multilayer GaTe. J Phys Chem Lett 2020; 11:608-617. [PMID: 31905289 DOI: 10.1021/acs.jpclett.9b03569] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, near-infrared (NIR) x-polarized (P-state) light is created from the transmission ray of monoclinic multilayer GaTe near the band edge. The P-state transmittance photons are produced via the transmission light of a ribbonlike multilayer GaTe with a plurality of nanowire grids being parallel and constructed along the y direction (b axis) from 1.56 to 1.62 eV. At 300 K, a P-state excitonic emission at 1.652 eV can be clearly detected in polarized microphotoluminescence (μPL) measurement. The free-exciton extinction energy and recombination lifetime of the band-edge exciton are evaluated and determined to be ΔE = 32 ± 4 meV and τ ≈ 0.032 ns, respectively, for the multilayer GaTe. Polarized microthermoreflectance (μTR) measurement also verifies that the x-polarized transition is allowed while y-polarized (S-state) transition is forbidden in the multilayer GaTe. An asymmetric p-to-p transition along the x polarization is thus inferred to comprise the band edge of multilayer GaTe to form in-plane optical anisotropy.
Collapse
Affiliation(s)
- Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 106 , Taiwan
| | - Mei-Chan Chiou
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 106 , Taiwan
| | - Thalita Maysha Herninda
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 106 , Taiwan
| |
Collapse
|
41
|
Lu Y, Chen J, Chen T, Shu Y, Chang RJ, Sheng Y, Shautsova V, Mkhize N, Holdway P, Bhaskaran H, Warner JH. Controlling Defects in Continuous 2D GaS Films for High-Performance Wavelength-Tunable UV-Discriminating Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906958. [PMID: 31894630 DOI: 10.1002/adma.201906958] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2019] [Revised: 11/22/2019] [Indexed: 06/10/2023]
Abstract
A chemical vapor deposition method is developed for thickness-controlled (one to four layers), uniform, and continuous films of both defective gallium(II) sulfide (GaS): GaS0.87 and stoichiometric GaS. The unique degradation mechanism of GaS0.87 with X-ray photoelectron spectroscopy and annular dark-field scanning transmission electron microscopy is studied, and it is found that the poor stability and weak optical signal from GaS are strongly related to photo-induced oxidation at defects. An enhanced stability of the stoichiometric GaS is demonstrated under laser and strong UV light, and by controlling defects in GaS, the photoresponse range can be changed from vis-to-UV to UV-discriminating. The stoichiometric GaS is suitable for large-scale, UV-sensitive, high-performance photodetector arrays for information encoding under large vis-light noise, with short response time (<66 ms), excellent UV photoresponsivity (4.7 A W-1 for trilayer GaS), and 26-times increase of signal-to-noise ratio compared with small-bandgap 2D semiconductors. By comprehensive characterizations from atomic-scale structures to large-scale device performances in 2D semiconductors, the study provides insights into the role of defects, the importance of neglected material-quality control, and how to enhance device performance, and both layer-controlled defective GaS0.87 and stoichiometric GaS prove to be promising platforms for study of novel phenomena and new applications.
Collapse
Affiliation(s)
- Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Tongxin Chen
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Yu Shu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Yuewen Sheng
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Viktoryia Shautsova
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Nhlakanipho Mkhize
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Philip Holdway
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Harish Bhaskaran
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| |
Collapse
|
42
|
Bafekry A, Shojaei F, Obeid MM, Ghergherehchi M, Nguyen C, Oskouian M. Two-dimensional silicon bismotide (SiBi) monolayer with a honeycomb-like lattice: first-principles study of tuning the electronic properties. RSC Adv 2020; 10:31894-31900. [PMID: 35518134 PMCID: PMC9056497 DOI: 10.1039/d0ra05026a] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2020] [Accepted: 08/05/2020] [Indexed: 12/18/2022] Open
Abstract
Using density functional theory, we investigate a novel two-dimensional silicon bismotide (SiBi) that has a layered GaSe-like crystal structure. Ab initio molecular dynamic simulations and phonon dispersion calculations suggest its good thermal and dynamical stability. The SiBi monolayer is a semiconductor with a narrow indirect bandgap of 0.4 eV. Our results show that the indirect bandgap decreases as the number of layers increases, and when the number of layers is more than six layers, direct-to-indirect bandgap switching occurs. The SiBi bilayer is found to be very sensitive to an E-field. The bandgap monotonically decreases in response to uniaxial and biaxial compressive strain, and reaches 0.2 eV at 5%, while at 6%, the semiconductor becomes a metal. For both uniaxial and biaxial tensile strains, the material remains a semiconductor and indirect-to-direct bandgap transition occurs at a strain of 3%. Compared to a SiBi monolayer with a layer thickness of 4.89 Å, the bandgap decreases with either increasing or decreasing layer thickness, and at a thicknesses of 4.59 to 5.01 Å, the semiconductor-to-metal transition happens. In addition, under pressure, the semiconducting character of the SiBi bilayer with a 0.25 eV direct bandgap is preserved. Our results demonstrate that the SiBi nanosheet is a promising candidate for designing high-speed low-dissipation devices. The modulation of the electronic properties of SiBi monolayer via external means, including layer thickness, electric field and mechanical strain are explored with DFT method.![]()
Collapse
Affiliation(s)
- Asadollah Bafekry
- Department of Physics
- University of Guilan
- 41335-1914 Rasht
- Iran
- Department of Physics
| | - Fazel Shojaei
- Department of Chemistry
- Faculty of Sciences
- Persian Gulf University
- Bushehr 75169
- Iran
| | - Mohammed M. Obeid
- Department of Ceramics
- College of Materials Engineering
- University of Babylon
- Hilla
- Iraq
| | - Mitra Ghergherehchi
- College of Electronic and Electrical Engineering
- Sungkyunkwan University
- Suwon
- Korea
| | - C. Nguyen
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
| | | |
Collapse
|
43
|
Chen T, Lu Y, Sheng Y, Shu Y, Li X, Chang RJ, Bhaskaran H, Warner JH. Ultrathin All-2D Lateral Graphene/GaS/Graphene UV Photodetectors by Direct CVD Growth. ACS APPLIED MATERIALS & INTERFACES 2019; 11:48172-48178. [PMID: 31833364 DOI: 10.1021/acsami.9b11984] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
UV-sensitive lateral all-two-dimensional (2D) photodetecting devices are produced by growing the large band gap layered GaS between graphene electrode pairs directly using chemical vapor deposition methods. The use of prepatterned graphene electrode pairs on the Si wafer enables more than 200 devices to be fabricated simultaneously. We show that the surface chemistry of the substrate during GaS leads to selective growth in graphene gaps, forming the lateral heterostructures, rather than on the surface of graphene. The graphene/GaS/graphene lateral photodetecting devices are demonstrated to be sensitive to UV light only, with no measurable response to visible light. Furthermore, we demonstrate UV-band discrimination in photosensing, with measured photocurrents only produced for middle-UV and not for near-UV wavelength regions. The detection limit could reach down to 2.61 μW/cm2 with a photoresponsivity as high as 11.7 A/W and a photo gain of 53.7 under 270 nm excitation. Gate-dependent modulation of the photocurrent is also demonstrated. The photodetectors exhibit long-term stability and reproducible ON-OFF switching behavior, with a response time lower than 60 ms. These results provide insights into how ultrathin UV sensing devices can be created using only 2D materials by exploiting large band gap 2D semiconductors such as GaS.
Collapse
Affiliation(s)
- Tongxin Chen
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yang Lu
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yuewen Sheng
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yu Shu
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Xuan Li
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Ren-Jie Chang
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Harish Bhaskaran
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Jamie H Warner
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| |
Collapse
|
44
|
Alencar RS, Rabelo C, Miranda HLS, Vasconcelos TL, Oliveira BS, Ribeiro A, Públio BC, Ribeiro-Soares J, Filho AGS, Cançado LG, Jorio A. Probing Spatial Phonon Correlation Length in Post-Transition Metal Monochalcogenide GaS Using Tip-Enhanced Raman Spectroscopy. NANO LETTERS 2019; 19:7357-7364. [PMID: 31469281 DOI: 10.1021/acs.nanolett.9b02974] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The knowledge of the phonon coherence length is of great importance for two-dimensional-based materials since phonons can limit the lifetime of charge carriers and heat dissipation. Here we use tip-enhanced Raman spectroscopy (TERS) to measure the spatial correlation length Lc of the A1g1 and A1g2 phonons of monolayer and few-layer gallium sulfide (GaS). The differences in Lc values are responsible for different enhancements of the A1g modes, with A1g1 always enhancing more than the A1g2, independently of the number of GaS layers. For five layers, the results show an Lc of 64 and 47 nm for A1g1 and A1g2, respectively, and the coherence lengths decrease when decreasing the number of layers, indicating that scattering with the surface roughness plays an important role.
Collapse
Affiliation(s)
- R S Alencar
- Faculdade de Física , Universidade Federal do Pará , 66075-110 Belém-PA , Brazil
- Departamento de Física , Universidade Federal de Minas Gerais , Belo Horizonte , Minas Gerais 30270-901 , Brazil
- Departamento de Física , Centro de Ciências, Universidade Federal do Ceará , P. O. Box 6030, Fortaleza , Ceará 60455-900 , Brazil
| | - Cassiano Rabelo
- Programa de Pós-Graduação em Engenharia Elétrica , Universidade Federal de Minas Gerais , Av. Antônio Carlos 6627 , 31270-901 Belo Horizonte , MG , Brazil
| | - Hudson L S Miranda
- Programa de Pós-Graduação em Engenharia Elétrica , Universidade Federal de Minas Gerais , Av. Antônio Carlos 6627 , 31270-901 Belo Horizonte , MG , Brazil
| | - Thiago L Vasconcelos
- Divisão de Metrologia de Materiais , Instituto Nacional de Metrologia Qualidade e Tecnologia (INMETRO) , Duque de Caxias, Rio de Janeiro 25250-020 , Brazil
| | - Bruno S Oliveira
- Divisão de Metrologia de Materiais , Instituto Nacional de Metrologia Qualidade e Tecnologia (INMETRO) , Duque de Caxias, Rio de Janeiro 25250-020 , Brazil
| | - Aroldo Ribeiro
- Departamento de Física , Universidade Federal de Minas Gerais , Belo Horizonte , Minas Gerais 30270-901 , Brazil
| | - Bruno C Públio
- Departamento de Física , Universidade Federal de Minas Gerais , Belo Horizonte , Minas Gerais 30270-901 , Brazil
| | - Jenaina Ribeiro-Soares
- Departamento de Física , Universidade Federal de Lavras , Lavras , Minas Gerais 37200-000 , Brazil
| | - A G Souza Filho
- Departamento de Física , Centro de Ciências, Universidade Federal do Ceará , P. O. Box 6030, Fortaleza , Ceará 60455-900 , Brazil
| | - Luiz Gustavo Cançado
- Departamento de Física , Universidade Federal de Minas Gerais , Belo Horizonte , Minas Gerais 30270-901 , Brazil
| | - Ado Jorio
- Departamento de Física , Universidade Federal de Minas Gerais , Belo Horizonte , Minas Gerais 30270-901 , Brazil
| |
Collapse
|
45
|
Kim J, Park W, Lee JH, Seong MJ. Simultaneous growth of Ga 2S 3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor. NANOTECHNOLOGY 2019; 30:384001. [PMID: 31181554 DOI: 10.1088/1361-6528/ab284c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
High quality gallium sulfide II (GaS) and gallium sulfide III ([Formula: see text]) thin films on [Formula: see text]/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.
Collapse
Affiliation(s)
- Jinbae Kim
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | | | | | | |
Collapse
|
46
|
Maeso D, Pakdel S, Santos H, Agraït N, Palacios JJ, Prada E, Rubio-Bollinger G. Strong modulation of optical properties in rippled 2D GaSe via strain engineering. NANOTECHNOLOGY 2019; 30:24LT01. [PMID: 30822757 DOI: 10.1088/1361-6528/ab0bc1] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Few-layer GaSe is one of the latest additions to the family of two-dimensional semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers (up to seven layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions.
Collapse
Affiliation(s)
- David Maeso
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049, Madrid, Spain
| | | | | | | | | | | | | |
Collapse
|
47
|
Wang F, Gao T, Zhang Q, Hu ZY, Jin B, Li L, Zhou X, Li H, Van Tendeloo G, Zhai T. Liquid-Alloy-Assisted Growth of 2D Ternary Ga 2 In 4 S 9 toward High-Performance UV Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806306. [PMID: 30411824 DOI: 10.1002/adma.201806306] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2018] [Revised: 10/16/2018] [Indexed: 05/23/2023]
Abstract
2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga2 In4 S9 flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga2 In4 S9 flakes display outstanding UV detection ability (R λ = 111.9 A W-1 , external quantum efficiency = 3.85 × 104 %, and D* = 2.25 × 1011 Jones@360 nm) with a fast response speed (τring ≈ 40 ms and τdecay ≈ 50 ms). In addition, Ga2 In4 S9 -based phototransistors exhibit a responsivity of ≈104 A W-1 @360 nm above the critical back-gate bias of ≈0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga2 In4 S9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.
Collapse
Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Ting Gao
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Qi Zhang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Xiasha Higher Education Zone, Hangzhou, Zhejiang, 310018, P. R. China
| | - Zhi-Yi Hu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, P. R. China
- NRC (Nanostructure Research Centre), Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, P. R. China
| | - Bao Jin
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Liang Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Gustaaf Van Tendeloo
- NRC (Nanostructure Research Centre), Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, P. R. China
- EMAT (Electron Microscopy for Materials Science), University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| |
Collapse
|
48
|
Briggs N, Preciado MI, Lu Y, Wang K, Leach J, Li X, Xiao K, Subramanian S, Wang B, Haque A, Sinnott S, Robinson JA. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. NANOTECHNOLOGY 2018; 29:47LT02. [PMID: 30207301 DOI: 10.1088/1361-6528/aae0bb] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.
Collapse
Affiliation(s)
- Natalie Briggs
- Department of Materials Science & Engineering, Center for 2-Dimensional & Layered Materials, The Pennsylvania State University, University Park, PA 16802, United States of America. 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, United States of America
| | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
49
|
Liu Y, Duan X, Huang Y, Duan X. Two-dimensional transistors beyond graphene and TMDCs. Chem Soc Rev 2018; 47:6388-6409. [PMID: 30079920 DOI: 10.1039/c8cs00318a] [Citation(s) in RCA: 126] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of a single- or few-atom-thick, covalently bonded lattice, in which all carriers are confined in their atomically thin channel with superior gate controllability and greatly suppressed OFF-state current, in contrast to typical bulk semiconductors plagued by short channel effects and heat generation from static power. Additionally, 2DSCs are free of surface dangling bonds that plague traditional semiconductors, and hence exhibit excellent electronic properties at the limit of single atom thickness. Therefore, 2DSCs can offer significant potential for the ultimate transistor scaling to single atomic body thickness. Earlier studies of graphene transistors have been limited by the zero bandgap and low ON-OFF ratio of graphene, and transition metal dichalcogenide (TMDC) devices are typically plagued by insufficient carrier mobility. To this end, considerable efforts have been devoted towards searching for new 2DSCs with optimum electronic properties. Within a relatively short period of time, a large number of 2DSCs have been demonstrated to exhibit unprecedented characteristics or unique functionalities. Here we review the recent efforts and progress in exploring novel 2DSCs beyond graphene and TMDCs for ultra-thin body transistors, discussing the merits, limits and prospects of each material.
Collapse
Affiliation(s)
- Yuan Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China.
| | | | | | | |
Collapse
|
50
|
Wang X, Sheng Y, Chang RJ, Lee JK, Zhou Y, Li S, Chen T, Huang H, Porter BF, Bhaskaran H, Warner JH. Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of Ga 2S 3. ACS OMEGA 2018; 3:7897-7903. [PMID: 30087927 PMCID: PMC6068597 DOI: 10.1021/acsomega.8b00749] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/18/2018] [Accepted: 06/25/2018] [Indexed: 06/08/2023]
Abstract
Two-dimensional gallium sulfide (GaS) crystals are synthesized by a simple and efficient ambient pressure chemical vapor deposition (CVD) method using a single-source precursor of Ga2S3. The synthesized GaS structures involve triangular monolayer domains and multilayer flakes with thickness of 1 and 15 nm, respectively. Regions of continuous films of GaS are also achieved with about 0.7 cm2 uniform coverage. This is achieved by using hydrogen carrier gas and the horizontally placed SiO2/Si substrates. Electron microscopy and spectroscopic measurements are used to characteristic the CVD-grown materials. This provides important insights into novel approaches for enlarging the domain size of GaS crystals and understanding of the growth mechanism using this precursor system.
Collapse
|