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Wang Y, Peng H, Song M, Song H, Liu Y, Chen P, Yin SF. Tuning Dynamic Structural Evolution of Bi 24O 31Cl 10 for Enhancing Piezo-Photocatalytic Nitrogen Oxidation to Nitrate. NANO LETTERS 2024; 24:8038-8045. [PMID: 38885183 DOI: 10.1021/acs.nanolett.4c01697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Direct nitrogen oxidation into nitrate under ambient conditions presents a promising strategy for harsh and multistep industrial processes. However, the dynamic structural evolution of active sites in surface reactions constitutes a highly intricate endeavor and remains in its nascent stage. Here, we constructed a Bi24O31Cl10 material with moiré superlattice structure (BCMS) for direct piezo-photocatalytic oxidation of nitrogen into nitrate. Excitingly, BCMS achieved excellent nitric acid production (15.44 mg g-1 h-1) under light and pressure conditions. Detailed experimental results show that the unique structure extracts the local strain tensor from the constricting Bi-Bi bond and Bi-O bond for internal structural reconstruction, which promotes the formation of electron and reactive molecule vortexes to facilitate charge transfer as well as N2 and O2 adsorption. Ultimately, these initiatives strengthen electron exchange between the superoxide radical and nitrogen as well as the binding strength of multiple intermediates, which swayingly adjusts the reaction path and energy barriers.
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Affiliation(s)
- Yi Wang
- Provincial Guizhou Key Laboratory of Green Chemical and Clean Energy Technology, School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Haiyan Peng
- Provincial Guizhou Key Laboratory of Green Chemical and Clean Energy Technology, School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Meiyang Song
- Provincial Guizhou Key Laboratory of Green Chemical and Clean Energy Technology, School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Henghui Song
- Provincial Guizhou Key Laboratory of Green Chemical and Clean Energy Technology, School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Yuhui Liu
- Provincial Guizhou Key Laboratory of Green Chemical and Clean Energy Technology, School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Peng Chen
- Provincial Guizhou Key Laboratory of Green Chemical and Clean Energy Technology, School of Chemistry and Chemical Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Shuang-Feng Yin
- State Key Laboratory of Chemo/Biosensing and Chemometrics, Advanced Catalytic Engineering Research Center of the Ministry of Education, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, Hunan, China
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Hajlaoui T, Harnagea C, Pignolet A. Magnetoelectric Coupling in Room Temperature Multiferroic Ba 2EuFeNb 4O 15/BaFe 12O 19 Epitaxial Heterostructures Grown by Laser Ablation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:761. [PMID: 36839129 PMCID: PMC9967026 DOI: 10.3390/nano13040761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/11/2023] [Accepted: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Multiferroic thin films are a promising class of multifunctional materials, since they allow the integration of multiple functionalities within a single device. In order to overcome the scarcity of single phase multiferroics, it is crucial to develop novel multiferroic heterostructures, combining good ferroelectric and ferromagnetic properties as well as a strong coupling between them. For this purpose, Ba2EuFeNb4O15/BaFe12O19 multiferroic magnetoelectric bilayers have been epitaxially grown on niobium doped SrTiO3 (100) single crystal substrates by pulsed laser deposition. The simultaneous presence of both ferroelectric and magnetic properties-due, respectively, to the Ba2EuFeNb4O15 and BaFe12O19 components-was demonstrated at room temperature, attesting the multiferroic nature of the heterostructure. More interestingly, a strong magnetoelectric coupling was demonstrated (i) by manipulating the ferroelectric properties via an external magnetic field, and conversely, (ii) by tuning the magnetic properties via an external electric field. This strong magnetoelectric coupling shows the high interdependence of both ferroic orders in the Ba2EuFeNb4O15/BaFe12O19 heterostructure, mediated by elastic (epitaxial) strain at the interfaces.
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Torres-Torres D, Bornacelli J, Vega-Becerra O, Garay-Tapia AM, Aguirre-Tostado FS, Torres-Torres C, Oliver A. Magnetic Force Microscopy Study of Multiscale Ion-Implanted Platinum in Silica Glass, Recorded by an Ultrafast Two-Wave Mixing Configuration. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2020; 26:53-62. [PMID: 31831082 DOI: 10.1017/s1431927619015204] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
This study explores magnetization exhibited by nanoscale platinum-based structures embedded in pure silica plates. A superposition of laser pulses in the samples produced periodic linear arrangements of micro-sized structures. The samples were integrated by PtO2 microstructures (PtOΣs) with dispersed Pt oxide nanoparticles in their surroundings. The characterization of the materials was performed by high transmission electron microscopy studies. Furthermore, topographical and magnetic effects on the sample surfaces were analyzed by atomic force microscopy and magnetic force microscopy, respectively. The magnetic measurements indicated an enhancement in the gradient phase shift and in the gradient force related to the magnetic PtOΣs. The possibility of tuning the magnetic characteristics of the samples through contact with a Nd2Fe14B magnet was demonstrated. This process corresponds to an innovative method for obtaining magnetic PtOΣs induced by laser pulses. Moreover, an increase in the compactness of the silica with platinum-based structures was confirmed by an evaluation of the effective elastic modulus with reference to pure silica. The multimodal magnetic structures studied in this work seem to be candidates for developing high-density magnetic storage media.
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Affiliation(s)
- David Torres-Torres
- Centro de Investigación en Materiales Avanzados, S.C. Unidad Monterrey, Apodaca, Nuevo León66600, México
| | - Jhovani Bornacelli
- Sección de Estudios de Posgrado e Investigación, Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Zacatenco, Instituto Politécnico Nacional, Ciudad de México07738, México
| | - Oscar Vega-Becerra
- Centro de Investigación en Materiales Avanzados, S.C. Unidad Monterrey, Apodaca, Nuevo León66600, México
| | - Andres M Garay-Tapia
- Centro de Investigación en Materiales Avanzados, S.C. Unidad Monterrey, Apodaca, Nuevo León66600, México
| | | | - Carlos Torres-Torres
- Sección de Estudios de Posgrado e Investigación, Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Zacatenco, Instituto Politécnico Nacional, Ciudad de México07738, México
| | - Alicia Oliver
- Instituto de Física, Universidad Nacional Autónoma de México, Ciudad de México04510, México
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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Huang L, Duan Y, Dai X, Zeng Y, Ma G, Liu Y, Gao S, Zhang W. Bioinspired Metamaterials: Multibands Electromagnetic Wave Adaptability and Hydrophobic Characteristics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1902730. [PMID: 31402564 DOI: 10.1002/smll.201902730] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2019] [Revised: 07/27/2019] [Indexed: 05/24/2023]
Abstract
Although various photonic devices inspired by natural materials have been developed, there is no research focusing on multibands adaptability, which is not conducive to the advancement of materials science. Herein, inspired by the moth eye surface model, state-of-the-art hierarchical metamaterials (MMs) used as tunable devices in multispectral electromagnetic-waves (EMWs) frequency range, from microwave to ultraviolet (UV), are designed and prepared. Experimentally, the robust broad bandwidth of microwave absorption greater than 90% (reflection loss (RL) < -10 dB) covering almost entire X and Ku bands (8.04-17.88 GHz) under a deep sub-wavelength thickness (1 mm) is demonstrated. The infrared emissivity is reduced and does not affect the microwave absorption simultaneously, further realizing anti-reflection and camouflage via the strong visible light scattering by the microstructure, and can prevent degradation by reducing the transmittance to less than 10% over the whole near UV band, as well as having hydrophobic abilities. The mechanism explored via simulation model is that topological effects are found in the bio-structure. This discovery points to a pathway for using natural models to overcome physical limits of MMs and has promising prospect in novel photonic materials.
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Affiliation(s)
- Lingxi Huang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116085, P. R. China
| | - Yuping Duan
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116085, P. R. China
| | - Xuhao Dai
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116085, P. R. China
| | - Yuansong Zeng
- Beijing Aeronautical Manufacturing Technology Research Institute, Beijing, 100024, P. R. China
| | - Guojia Ma
- Beijing Aeronautical Manufacturing Technology Research Institute, Beijing, 100024, P. R. China
| | - Yi Liu
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116085, P. R. China
| | - Shaohua Gao
- ZTE Corporation (Shanxi Province), Xian, 710114, P. R. China
| | - Weiping Zhang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116085, P. R. China
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Zhong C, Lin L, Qi R, Cheng Y, Gao X, Huang R. Plan-view sample preparation of a buried nanodots array by FIB with accurate EDS positioning in thickness direction. Ultramicroscopy 2019; 207:112840. [PMID: 31505397 DOI: 10.1016/j.ultramic.2019.112840] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Revised: 07/23/2019] [Accepted: 09/02/2019] [Indexed: 11/18/2022]
Abstract
Recently, there are growing demands on focus ion beam (FIB) sample preparation technique in plan-view geometry because it can provide the in-plane microstructure information of thin film and allows direct correlations of the atomic structure via transmission electron microscopy with micrometer-scale property measurements. However, one main technical difficulty is to position the buried thin film accurately in a sandwich structure. In this paper, an on-line positioning method based on the thickness monitoring by EDS is introduced, where the intensities of the characteristic X-ray peaks from different layers are proportional to the relative thickness of them at the same acquisition conditions. A high density array of ∼100 nm squares BiFeO3 nanodots with ∼ 25 nm thickness grown on a 20 nm thick SrRuO3 bottom electrode and (001)-oriented SrTiO3 substrate is selected for demonstration. By monitoring the intensities of Pt-M, Sr-L, Ti-K, Ru-L, Fe-K and Bi-M peaks, the relative thickness of Pt protection layer, the BiFeO3, SrRuO3 and SrTiO3 can be obtained, which provide accurate position of the BFO nanodots array in the thickness direction. With these information, the cutting parameters are optimized and a high quality plan-view specimen of BFO nanodots array is prepared, which is confirmed by high resolution transmission electron microscopy. This positioning method should have a wide application for material science.
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Affiliation(s)
- Chaorong Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, China; School of Physics and Telecommunication Engineering, Yulin Normal University, Yulin, Guangxi 537000, China
| | - Lina Lin
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, China
| | - Xingsen Gao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, China; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China.
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Mehmood N, Song X, Tian G, Hou Z, Chen D, Fan Z, Qin M, Gao X, Liu JM. Electric field driven multi-state magnetization switching in triangular nanomagnets on piezoelectric substrate. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:295802. [PMID: 30978710 DOI: 10.1088/1361-648x/ab18f0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Electric field control of magnetic state switching mediated by magneto-elastic coupling in multiferroic heterostructures consisting of shape anisotropic magnetostrictive nanomagnets elastically coupled with a piezoelectric substrate has a promising potential for next generation magneto-elastic memory and logic devices. In this work, by using micromagnetic simulation, we showed that localized strain-induced magnetic anisotropy caused by the electric field-induced piezostrain combined with strong multifold shape anisotropy effect can be used for achieving a multistate switching of magnetization in a triangular soft magnetic nano-island on a piezoelectric substrate. A piezostrain-induced uniaxial magnetic anisotropy pulse applied in specific directions switches the magnetization within the triangular nanomagnet by an angle of 60° from the initial state. The relation between critical magnitude of the strain pulse for the switching of the magnetization states and geometric parameters (thickness and lateral size) within the triangular nanomagnets has been worked out. Complete cycles of clockwise as well as counter-clockwise switching of the magnetization states of the triangular nanomagnet have been achieved by a series of sequential switching with different directions of applied strain-induced magnetic anisotropy. This local gating scheme-based multistate switching can be used for electric field-induced ultra-fast, deterministic and reversible magnetization switching which are the key challenges in designing of the magnetoelastic and/or magnetoelectric memory and logic devices.
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Affiliation(s)
- Nasir Mehmood
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
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Tian G, Yang W, Chen D, Fan Z, Hou Z, Alexe M, Gao X. Topological domain states and magnetoelectric properties in multiferroic nanostructures. Natl Sci Rev 2019; 6:684-702. [PMID: 34691923 PMCID: PMC8291546 DOI: 10.1093/nsr/nwz100] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Revised: 07/07/2019] [Accepted: 07/12/2019] [Indexed: 11/21/2022] Open
Abstract
Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.
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Affiliation(s)
- Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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Hua Q, Wu H, Gao B, Zhao M, Li Y, Li X, Hou X, (Marvin) Chang M, Zhou P, Qian H. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900024. [PMID: 31131198 PMCID: PMC6524079 DOI: 10.1002/advs.201900024] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Revised: 01/17/2019] [Indexed: 05/28/2023]
Abstract
Leakage interference between memory cells is the primary obstacle for enlarging X-point memory arrays. Metal-filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. However, these selectors typically have limited on-state currents (≤10 µA), which are insufficient for memory RESET operations. Here, a strategy is proposed to achieve sufficiently large RESET current (≈2.3 mA) by introducing highly ordered Ag nanodots to the threshold switch. Compared to the Ag thin film case, Ag nanodots as active electrode could avoid excessive Ag atoms migration into solid electrolyte during operations, which causes stable conductive filament growth. Furthermore, Ag nanodots with rapid thermal processing contribute to forming multiple weak Ag filaments at a lower voltage and then spontaneous rupture as the applied voltage reduced, according to quantized conductance and simulation analysis. Impressively, the Ag nanodots based threshold switch, which is bidirectional and truly electroforming-free, demonstrates extremely high selectivity >109, ultralow leakage current <1 pA, very steep slope of 0.65 mV dec-1, and good thermal stability up to 200 °C, and further represents significant suppression of leakage currents and excellent performances for SET/RESET operations in the one-selector-one-resistor configuration.
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Affiliation(s)
- Qilin Hua
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
| | - Huaqiang Wu
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
| | - Bin Gao
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
| | - Meiran Zhao
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
| | - Yujia Li
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
| | - Xinyi Li
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
| | - Xiang Hou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | | | - Peng Zhou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - He Qian
- Institute of MicroelectronicsTsinghua UniversityBeijing100084China
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Exploring the Magnetoelectric Coupling at the Composite Interfaces of FE/FM/FE Heterostructures. Sci Rep 2018; 8:17381. [PMID: 30478356 PMCID: PMC6255769 DOI: 10.1038/s41598-018-35648-1] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2018] [Accepted: 10/15/2018] [Indexed: 11/08/2022] Open
Abstract
Multiferroic materials have attracted considerable attention as possible candidates for a wide variety of future microelectronic and memory devices, although robust magnetoelectric (ME) coupling between electric and magnetic orders at room temperature still remains difficult to achieve. In order to obtain robust ME coupling at room temperature, we studied the Pb(Fe0.5Nb0.5)O3/Ni0.65Zn0.35Fe2O4/Pb(Fe0.5Nb0.5)O3 (PFN/NZFO/PFN) trilayer structure as a representative FE/FM/FE system. We report the ferroelectric, magnetic and ME properties of PFN/NZFO/PFN trilayer nanoscale heterostructure having dimensions 70/20/70 nm, at room temperature. The presence of only (00l) reflection of PFN and NZFO in the X-ray diffraction (XRD) patterns and electron diffraction patterns in Transmission Electron Microscopy (TEM) confirm the epitaxial growth of multilayer heterostructure. The distribution of the ferroelectric loop area in a wide area has been studied, suggesting that spatial variability of ferroelectric switching behavior is low, and film growth is of high quality. The ferroelectric and magnetic phase transitions of these heterostructures have been found at ~575 K and ~650 K, respectively which are well above room temperature. These nanostructures exhibit low loss tangent, large saturation polarization (Ps ~ 38 µC/cm2) and magnetization (Ms ~ 48 emu/cm3) with strong ME coupling at room temperature revealing them as potential candidates for nanoscale multifunctional and spintronics device applications.
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Zhao C, Zhu Y, Chen L, Zhou S, Su Y, Ji X, Chen A, Gui X, Tang Z, Liu Z. Multi-layer nanoarrays sandwiched by anodized aluminium oxide membranes: an approach to an inexpensive, reproducible, highly sensitive SERS substrate. NANOSCALE 2018; 10:16278-16283. [PMID: 30128448 DOI: 10.1039/c8nr05875j] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A large-scale sub-5 nm nanofabrication technique is developed based on double layer anodized aluminium oxide (AAO) porous membrane masking. This technique also provides a facile route to form multilayer nano-arrays (metal nanoarrays sandwiched by AAO membranes), which is very challenging for other techniques. Normally the AAO mask has to be sacrificed, yet in this work it is preserved as a part of the nanostructure. The preserved AAO layers as the support for the second/third layer of the metal arrays provide a high-refractive index background for the multilayer metal arrays. This background concentrates the local E-field more significantly and results in a much higher Surface-Enhanced Raman Spectroscopy (SERS) signal than single layer metal arrays. This technique may lead to the advent of an inexpensive, reproducible, highly sensitive SERS substrate. Moreover, the physical essence of the plasmonic enhancement is unveiled by finite element method based numerical simulations. Enhancements from the gaps and the multilayer nanostructure agree very well with the experiments. The calculated layer-by-layer electric field distribution determines the contribution from different layers and provides more insights into the 3D textured structure.
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Affiliation(s)
- Chengchun Zhao
- College of Innovation and Entrepreneurship, Southern University of Science and technology, Shenzhen 518055, China.
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12
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Yao J, Song X, Gao X, Tian G, Li P, Fan H, Huang Z, Yang W, Chen D, Fan Z, Zeng M, Liu JM. Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures. ACS NANO 2018; 12:6767-6776. [PMID: 29957931 DOI: 10.1021/acsnano.8b01936] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Electrically driven magnetic switching (EDMS) is highly demanded for next-generation advanced memories or spintronic devices. The key challenge is to achieve repeatable and reversible EDMS at sufficiently small scale. In this work, we reported an experimental realization of room-temperature, electrically driven, reversible, and robust 120° magnetic state rotation in nanoscale multiferroic heterostructures consisting of a triangular Co nanomagnet array on tetragonal BiFeO3 films, which can be directly monitored by magnetic force microscope (MFM) imaging. The observed reversible magnetic switching in an individual nanomagnet can be triggered by a small electric pulse within 10 V with an ultrashort time of ∼10 ns, which also demonstrates sufficient switching cycling and months-long retention lifetime. A mechanism based on synergic effects of interfacial strain and exchange coupling plus shape anisotropy was also proposed, which was also verified by micromagnetic simulations. Our results create an avenue to engineer the nanoscale EDMS for low-power-consumption, high-density, nonvolatile magnetoelectric memories and beyond.
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Affiliation(s)
- Junxiang Yao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Xiao Song
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Xingsen Gao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Guo Tian
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Peilian Li
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Hua Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Zhifeng Huang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Wenda Yang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Deyang Chen
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Zhen Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Min Zeng
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 21009 , China
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13
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Hu S, Cazorla C, Xiang F, Ma H, Wang J, Wang J, Wang X, Ulrich C, Chen L, Seidel J. Strain Control of Giant Magnetic Anisotropy in Metallic Perovskite SrCoO 3-δ Thin Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22348-22355. [PMID: 29882406 DOI: 10.1021/acsami.8b03553] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Magnetic materials with large magnetic anisotropy are essential for workaday applications such as permanent magnets and magnetic data storage. There is widespread interest in finding efficient ways of controlling magnetic anisotropy, among which strain control has proven to be a very powerful technique. Here, we demonstrate the strain-mediated magnetic anisotropy in SrCoO3-δ thin film, a perovskite oxide that is metallic and adopts a cubic structure at δ ≤ 0.25. We find that the easy-magnetization axis in SrCoO3-δ can be rotated by 90° upon application of moderate epitaxial strains ranging from -1.2 to +1.8%. The magnetic anisotropy in compressive SrCoO3-δ thin films is huge, as shown by magnetic hysteresis loops rendering an anisotropy energy density of ∼106 erg/cm3. The local variance in magnetic force microscopy upon temperature and magnetic field reveals that the evolution of magnetic domains in the SCO thin film is strongly dependent on magnetic anisotropy.
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Affiliation(s)
- Songbai Hu
- Department of Physics , South University of Science and Technology of China , Shenzhen 518055 , China
- School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | | | - Feixiang Xiang
- Spintronic and Electronic Materials Group, Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , Wollongong , NSW 2522 , Australia
| | - Hongfei Ma
- Department of Physics , South University of Science and Technology of China , Shenzhen 518055 , China
| | - Jianyuan Wang
- School of Nature and Applied Science , Northwestern Polytechnical University , Xi'an 710072 , China
| | - Jianbo Wang
- School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | - Xiaolin Wang
- Spintronic and Electronic Materials Group, Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , Wollongong , NSW 2522 , Australia
| | | | - Lang Chen
- Department of Physics , South University of Science and Technology of China , Shenzhen 518055 , China
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14
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Zhao S, Wang L, Zhou Z, Li C, Dong G, Zhang L, Peng B, Min T, Hu Z, Ma J, Ren W, Ye ZG, Chen W, Yu P, Nan CW, Liu M. Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801639. [PMID: 29809283 DOI: 10.1002/adma.201801639] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2018] [Revised: 04/12/2018] [Indexed: 06/08/2023]
Abstract
Electric field (E-field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy-efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin-reorientation transition (SRT) that allows the magnetic moment rotating between the out-of-plane and the in-plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+ [TFSI]- /Pt/(Co/Pt)2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V-1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out-of-plane and in-plane directions via IL gating. The key mechanism, revealed by the first-principles calculation, is that the IL gating process influences the interfacial spin-orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in-plane/out-of-plane magnetization switching. This work demonstrates a unique IL-gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.
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Affiliation(s)
- Shishun Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Lei Wang
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Chunlei Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Le Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bin Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Tai Min
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1S5, Canada
| | - Wei Chen
- Materials Science Division, Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA
- Institute for Molecular Engineering, The University of Chicago, 5640 South Ellis Avenue, Chicago, IL, 60637, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
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15
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Yang C, Xi X, Yu Z, Cao H, Li J, Lin S, Ma Z, Zhao L. Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5492-5497. [PMID: 29350908 DOI: 10.1021/acsami.7b15344] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
On the basis of the laterally porous GaN, we designed and fabricated a composite porous GaN structure with both well-ordered lateral and vertical holes. Compared to the plane GaN, the composite porous GaN structure with the combination of the vertical holes can help to reduce UV reflectance and increase the saturation photocurrent during water splitting by a factor of ∼4.5. Furthermore, we investigated the underlying mechanism for the enhancement of the water splitting performance using a finite-difference time-domain method. The results show that the well-ordered vertical holes can not only help to open the embedded pore channels to the electrolyte at both sides and reduce the migration distance of the gas bubbles during the water splitting reactions but also help to modulate the light field. Using this composite porous GaN structure, most of the incident light can be modulated and trapped into the nanoholes, and thus the electric fields localized in the lateral pores can increase dramatically as a result of the strong optical coupling. Our findings pave a new way to develop GaN photoelectrodes for highly efficient solar water splitting.
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Affiliation(s)
- Chao Yang
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xin Xi
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhiguo Yu
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
| | - Haicheng Cao
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Jing Li
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Shan Lin
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhanhong Ma
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Lixia Zhao
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
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16
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Tian G, Chen D, Fan H, Li P, Fan Z, Qin M, Zeng M, Dai J, Gao X, Liu JM. Observation of Exotic Domain Structures in Ferroelectric Nanodot Arrays Fabricated via a Universal Nanopatterning Approach. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37219-37226. [PMID: 28960060 DOI: 10.1021/acsami.7b12605] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report a facile and cost-competitive nanopatterning route, using Ar ion beam etching through a monolayer polystyrene sphere (PS) array placed on a ferroelectric epitaxial thin film, to fabricate ordered ferroelectric nanodot arrays. Using this method, well-ordered BiFeO3 epitaxial nanodots, with tunable sizes from ∼100 to ∼900 nm in diameter, have been successfully synthesized. Interestingly, a plethora of exotic nanodomain structures, e.g., stripe domains, vortex and antivortex domains, and single domains, are observed in these nanodots. Moreover, this novel technique has been extended to produce Pb(Zr,Ti)O3 nanodots and multiferroic composite Co/BiFeO3 nanodots. These observations enable the creation of exotic domain structures and provide a wide range of application potentials for future nanoelectronic devices.
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Affiliation(s)
- Guo Tian
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Deyang Chen
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Hua Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Peilian Li
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Zhen Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Minghui Qin
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Min Zeng
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Jiyan Dai
- Department of Applied Physics, Hong Kong Polytechnic University , Hong Kong, China
| | - Xingsen Gao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
| | - Jun-Ming Liu
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
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17
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Xue X, Zhou Z, Dong G, Feng M, Zhang Y, Zhao S, Hu Z, Ren W, Ye ZG, Liu Y, Liu M. Discovery of Enhanced Magnetoelectric Coupling through Electric Field Control of Two-Magnon Scattering within Distorted Nanostructures. ACS NANO 2017; 11:9286-9293. [PMID: 28813600 DOI: 10.1021/acsnano.7b04653] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electric field control of dynamic spin interactions is promising to break through the limitation of the magnetostatic interaction based magnetoelectric (ME) effect. In this work, electric field control of the two-magnon scattering (TMS) effect excited by in-plane lattice rotation has been demonstrated in a La0.7Sr0.3MnO3 (LSMO)/Pb(Mn2/3Nb1/3)-PbTiO3 (PMN-PT) (011) multiferroic heterostructure. Compared with the conventional strain-mediated ME effect, a giant enhancement of ME effect up to 950% at the TMS critical angle is precisely determined by angular resolution of the ferromagnetic resonance (FMR) measurement. Particularly, a large electric field modulation of magnetic anisotropy (464 Oe) and FMR line width (401 Oe) is achieved at 173 K. The electric-field-controllable TMS effect and its correlated ME effect have been explained by electric field modulation of the planar spin interactions triggered by spin-lattice coupling. The enhancement of the ME effect at various temperatures and spin dynamics control are promising paradigms for next-generation voltage-tunable spintronic devices.
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Affiliation(s)
- Xu Xue
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Mengmeng Feng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Yijun Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Shishun Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
- Department of Chemistry and 4D LABORATORIES, Simon Fraser University , Burnaby, British Columbia V5A 1S6, Canada
| | - Yaohua Liu
- Quantum Condensed Matter Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China
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18
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Li Z, Wang Y, Tian G, Li P, Zhao L, Zhang F, Yao J, Fan H, Song X, Chen D, Fan Z, Qin M, Zeng M, Zhang Z, Lu X, Hu S, Lei C, Zhu Q, Li J, Gao X, Liu JM. High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states. SCIENCE ADVANCES 2017; 3:e1700919. [PMID: 28835925 PMCID: PMC5562417 DOI: 10.1126/sciadv.1700919] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2017] [Accepted: 07/16/2017] [Indexed: 05/04/2023]
Abstract
The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.
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Affiliation(s)
- Zhongwen Li
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Guo Tian
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Peilian Li
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Lina Zhao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Fengyuan Zhang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Junxiang Yao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Hua Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Xiao Song
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Minghui Qin
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Min Zeng
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Zhang Zhang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Shejun Hu
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
| | - Chihou Lei
- Department of Aerospace and Mechanical Engineering, Saint Louis University, St. Louis, MO 63103–1110, USA
| | - Qingfeng Zhu
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, China
| | - Jiangyu Li
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, China
- Department of Mechanical Engineering, University of Washington, Seattle, WA 98195–2600, USA
| | - Xingsen Gao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
- Corresponding author. (X.G.); (J.-M.L.)
| | - Jun-Ming Liu
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 21009, China
- Corresponding author. (X.G.); (J.-M.L.)
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19
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Amrillah T, Bitla Y, Shin K, Yang T, Hsieh YH, Chiou YY, Liu HJ, Do TH, Su D, Chen YC, Jen SU, Chen LQ, Kim KH, Juang JY, Chu YH. Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy. ACS NANO 2017; 11:6122-6130. [PMID: 28531355 DOI: 10.1021/acsnano.7b02102] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.
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Affiliation(s)
| | | | - Kwangwoo Shin
- CeNSCMR, Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea
| | - Tiannan Yang
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | | | - Yu-You Chiou
- Department of Physics, National Cheng Kung University , Tainan 70101, Taiwan
| | - Heng-Jui Liu
- Department of Materials Science and Engineering, National Chung Hsing University , Taichung 40227, Taiwan
| | - Thi Hien Do
- Institute of Physics, Academia Sinica , Taipei 11529, Taiwan
| | - Dong Su
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Yi-Chun Chen
- Department of Physics, National Cheng Kung University , Tainan 70101, Taiwan
| | - Shien-Uang Jen
- Institute of Physics, Academia Sinica , Taipei 11529, Taiwan
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Kee Hoon Kim
- CeNSCMR, Department of Physics and Astronomy, Seoul National University , Seoul 151-747, Republic of Korea
| | | | - Ying-Hao Chu
- Institute of Physics, Academia Sinica , Taipei 11529, Taiwan
- Material and Chemical Research Laboratories, Industrial Technology Research Institute , Hsinchu 31040, Taiwan
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20
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Abstract
Due to the demand of controlling magnetism by electric fields for future storage devices, materials with magnetoelectric coupling are of great interests. Based on first-principles calculations, we study the electronic and magnetic properties of a double perovskite Sr2CoMoO6 (SCMO) in a hybrid heterostructure combined with BaTiO3 (BTO) in different polarization states. The calculations show that by introducing ferroelectric state in BTO, SCMO transforms from an antiferromagnetic semiconductor to a half-metal. Specially, altering the polarization direction not only controls the interfacial magnetic moment, but also changes the orbital occupancy of the Co-3d state. This novel multiple magnetoelectric coupling opens possibilities for designing new type of spintronic and microelectronic devices with controllable degree of freedom of interfacial electrons in the heterostructures.
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21
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Chen D, Chen Z, He Q, Clarkson JD, Serrao CR, Yadav AK, Nowakowski ME, Fan Z, You L, Gao X, Zeng D, Chen L, Borisevich AY, Salahuddin S, Liu JM, Bokor J. Interface Engineering of Domain Structures in BiFeO 3 Thin Films. NANO LETTERS 2017; 17:486-493. [PMID: 27935317 DOI: 10.1021/acs.nanolett.6b04512] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109° stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71° and 109° periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO3 system originates from 109° domain walls. Our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO3 system.
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Affiliation(s)
- Deyang Chen
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China
- Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States
- School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China
- Department of Physics, University of California Berkeley , Berkeley, California 94720, United States
| | - Zuhuang Chen
- Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States
| | - Qian He
- Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - James D Clarkson
- Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States
| | - Claudy R Serrao
- Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States
| | - Ajay K Yadav
- Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States
| | - Mark E Nowakowski
- Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States
| | - Zhen Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China
| | - Long You
- School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China
| | - Xingsen Gao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China
| | - Dechang Zeng
- School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China
| | - Lang Chen
- Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China
| | - Albina Y Borisevich
- Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States
| | - Jun-Ming Liu
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Jeffrey Bokor
- Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States
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Tian G, Zhao L, Lu Z, Yao J, Fan H, Fan Z, Li Z, Li P, Chen D, Zhang X, Qin M, Zeng M, Zhang Z, Dai J, Gao X, Liu JM. Fabrication of high-density BiFeO 3 nanodot and anti-nanodot arrays by anodic alumina template-assisted ion beam etching. NANOTECHNOLOGY 2016; 27:485302. [PMID: 27819797 DOI: 10.1088/0957-4484/27/48/485302] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Efficient and cost-competitive fabrication of high-quality ferroelectric and multiferroic nanostructures is of general interest. In this work, a top-down nano-patterning technique is developed by the Ar+ ion beam etching in combination with the sacrificed ultrathin anodic alumina (AAO) mask. This technique is demonstrated by preparation of the epitaxial BiFeO3 (BFO) nanostructures of various geometries, including nanodot and anti-nanodot arrays. The lateral dot size is as small as ∼60 nm and an ultrahigh dot density of ∼60 Gbit/inch2 is achieved. It is revealed that the etching process involves sequential shape evolution of both the AAO mask and the underlying BFO film, resulting in the nanodots and anti-nanodots arrays of various geometries. The as-etched BFO nanodots array exhibits well-established ferroelectric domain structures and reversible polarization switching, as examined by piezoresponse force microscopy (PFM). It is suggested that this technique is extendable to fabrication of a wide range of functional oxide nanostructures for potential nanoelectronic applications.
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Affiliation(s)
- Guo Tian
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China
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23
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Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy. Sci Rep 2016; 6:27774. [PMID: 27297638 PMCID: PMC4906286 DOI: 10.1038/srep27774] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2016] [Accepted: 05/24/2016] [Indexed: 11/21/2022] Open
Abstract
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.
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