Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes

Growing Carbon Nanotubes In Situ Surrounding Carbon Fiber Surface via Chemical Vapor Deposition to Reinforce Flexural Strength of Carbon Fiber Composites

This study employed novel joint treatments to strengthen the carbon fiber reinforced polymer (CFRP) composites. Vertically aligned carbon nanotubes (VACNTs) were prepared in situ on the catalyst-treated CF surface via the chemical vapor deposition (CVD) method, intertwining into three-dimensional fiber-nets and fully surrounding CF to form an integrated structure. The resin pre-coating (RPC) technique was further used to guide diluted epoxy resin (without hardener) to flow into nanoscale and submicron spaces to eliminate void defects at the root of VACNTs. Three-point bending testing results showed the "growing CNTs and RPC"-treated CFRP composites yielded the best flexural strength, a 27.1% improvement over the specimens without treatment, while the failure modes indicated that the original delamination failure was changed into "flexural failure" with through-the-thickness crack propagation. In brief, growing VACNTs and RPC on the CF surface enabled toughening of the epoxy adhesive layer, reducing potential void defects and constructing the integrated quasi-Z-directional fiber bridging at the CF/epoxy interface for stronger CFRP composites. Therefore, the joint treatments of growing VACNTs in situ via the CVD method and RPC technique are very effective and have great potential in manufacturing high-strength CFRP composites for aerospace applications.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

Oxygen-promoted catalyst sintering influences number density, alignment, and wall number of vertically aligned carbon nanotubes

A lack of synthetic control and reproducibility during vertically aligned carbon nanotube (CNT) synthesis has stifled many promising applications of organic nanomaterials. Oxygen-containing species are particularly precarious in that they have both beneficial and deleterious effects and are notoriously difficult to control. Here, we demonstrated diatomic oxygen's ability, independent of water, to tune oxide-supported catalyst thin film dewetting and influence nanoscale (diameter and wall number) and macro-scale (alignment and density) properties for as-grown vertically aligned CNTs. In particular, single- or few-walled CNT forests were achieved at very low oxygen loading, with single-to-multi-walled CNT diameters ranging from 4.8 ± 1.3 nm to 6.4 ± 1.1 nm over 0-800 ppm O₂, and an expected variation in alignment, where both were related to the annealed catalyst morphology. Morphological differences were not the result of subsurface diffusion, but instead occurred via Ostwald ripening under several hundred ppm O₂, and this effect was mitigated by high H₂ concentrations and not due to water vapor (as confirmed in O₂-free water addition experiments), supporting the importance of O₂ specifically. Further characterization of the interface between the Fe catalyst and Al₂O₃ support revealed that either oxygen-deficit metal oxide or oxygen-adsorption on metals could be functional mechanisms for the observed catalyst nanoparticle evolution. Taken as a whole, our results suggest that the impacts of O₂ and H₂ on the catalyst evolution have been underappreciated and underleveraged in CNT synthesis, and these could present a route toward facile manipulation of CNT forest morphology through control of the reactive gaseous atmosphere alone.

Unveiling the Evolutions of Nanotube Diameter Distribution during the Growth of Single-Walled Carbon Nanotubes

In situ and ex situ Raman measurements were used to study the dynamics of the populations of single-walled carbon nanotubes (SWCNTs) during their catalytic growth by chemical vapor deposition. Our study reveals that the nanotube diameter distribution strongly evolves during SWCNT growth but in dissimilar ways depending on the growth conditions. We notably show that high selectivity can be obtained using short or moderate growth times. High-resolution transmission electron microscopy observations support that Ostwald ripening is the key process driving these seemingly contradictory results by regulating the size distribution and lifetime of the active catalyst particles. Ostwald ripening appears as the main termination mechanism for the smallest diameter tubes, whereas carbon poisoning dominates for the largest ones. By unveiling the key concept of dynamic competition between nanotube growth and catalyst ripening, we show that time can be used as an active parameter to control the growth selectivity of carbon nanotubes and other 1D systems.

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0-1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nanoelectronics. Up to date, the highest reported content of s-SWNTs as-grown is ∼97%, which is still far below the daunting requirements of high-end applications. Herein, we report a feasible and green pathway to use H₂O vapor to modulate the structure of the intermetallic W₆Co₇ nanocrystals. By using the resultant W₆Co₇ nanocatalysts with a high percentage of (1 0 10) planes as structural templates, we realized the direct growth of s-SWNT with the purity of ∼99%, in which ∼97% is (14,4) tubes (diameter 1.29 nm). H₂O can also act as an environmentally friendly and facile etchant for eliminating metallic SWNTs, and the content of s-SWNTs was further improved to 99.8% and (14,4) tubes to 98.6%. High purity s-SWNTs with even bandgap determined by their uniform structure can be used for the exquisite applications in different fields.