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Shibata K, Yoshida M, Hirakawa K, Otsuka T, Bisri SZ, Iwasa Y. Single PbS colloidal quantum dot transistors. Nat Commun 2023; 14:7486. [PMID: 37980351 PMCID: PMC10657373 DOI: 10.1038/s41467-023-43343-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Accepted: 11/07/2023] [Indexed: 11/20/2023] Open
Abstract
Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures. However, there have been few reports on single-electron transistors using colloidal quantum dots due to the difficulty in fabrication. In this work, we fabricated single-electron transistors using single oleic acid-capped PbS quantum dot coupled to nanogap metal electrodes and measured single-electron tunneling. We observed dot size-dependent carrier transport, orbital-dependent electron charging energy and conductance, electric field modulation of the electron confinement potential, and the Kondo effect, which provide nanoscopic insights into carrier transport through single colloidal quantum dots. Moreover, the large charging energy in small quantum dots enables single-electron transistor operation even at room temperature. These findings, as well as the commercial availability and high stability, make PbS quantum dots promising for the development of quantum information and optoelectronic devices, particularly room-temperature single-electron transistors with excellent optical properties.
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Affiliation(s)
- Kenji Shibata
- Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumi-cho, Taihaku-ku, Sendai, 982-8577, Japan.
| | - Masaki Yoshida
- Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumi-cho, Taihaku-ku, Sendai, 982-8577, Japan
| | - Kazuhiko Hirakawa
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
- Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
| | - Tomohiro Otsuka
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
- Department of Electronic Engineering, Tohoku University, Aoba 6-6-05, Aramaki, Aoba-Ku, Sendai, 980-8579, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Satria Zulkarnaen Bisri
- Emergent Device Research Team, RIKEN Center for Emergent Matter Science, 2-1 Hirosawa Wako, Saitama, 351-0198, Japan
- Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei-shi, Tokyo, 184-8588, Japan
| | - Yoshihiro Iwasa
- Emergent Device Research Team, RIKEN Center for Emergent Matter Science, 2-1 Hirosawa Wako, Saitama, 351-0198, Japan
- Department of Applied Physics and Quantum-Phase Electronics Center, University of Tokyo, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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2
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Zhao G, Zhang M, Li H, Guo Y, Liu T, Wang H, Wang H, Fang Y. Velocity field distribution control in antisolvent flow realizing highly stable and efficient perovskite nanocrystals. J Colloid Interface Sci 2023; 649:214-222. [PMID: 37348341 DOI: 10.1016/j.jcis.2023.06.114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 06/06/2023] [Accepted: 06/16/2023] [Indexed: 06/24/2023]
Abstract
Achieving highly stable and efficient perovskite nanocrystals (NCs) without applying functional additives or encapsulation, particularly sustaining the stability in ultra-dilute solution, is still a formidable challenge. Here, we show the FAPbI3 perovskite NCs with achieved ∼100 % photoluminescence quantum yield (PLQY) and low defect density (∼0.2 cm-3 per NCs), which is obtained by controlling the velocity field distribution of antisolvent flow in ligand-assisted reprecipitation process. The NCs show incredible reproducibility with narrow deviation of PLQY and linewidth between batch by batch, as well as remarkable stability of maintaining over 80 % PLQY, either in an ultra-diluted solution (9.3 × 10-6 mg/mL), or storing in ambient condition after 90 days with concentration of 0.09 mg/mL. The results in this work demonstrate the interplay of fluid mechanics and crystallization kinetics of perovskite, which pioneers a novel and unprecedent understanding for improving the stability of perovskite NCs for efficient quantum light source.
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Affiliation(s)
- Guanguan Zhao
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, PR China
| | - Miao Zhang
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an 710021, PR China
| | - Huixin Li
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, PR China
| | - Yangyang Guo
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, PR China
| | - Taihong Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an 710119, PR China
| | - Hongqiang Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, PR China; Institute of Clean Energy, Yangtze River Delta Research Institute, Northwestern Polytechnical University, Taicang 215400, PR China.
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an 710072, PR China; Institute of Clean Energy, Yangtze River Delta Research Institute, Northwestern Polytechnical University, Taicang 215400, PR China.
| | - Yu Fang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an 710119, PR China
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3
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Diroll BT, Guzelturk B, Po H, Dabard C, Fu N, Makke L, Lhuillier E, Ithurria S. 2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration. Chem Rev 2023; 123:3543-3624. [PMID: 36724544 DOI: 10.1021/acs.chemrev.2c00436] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.
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Affiliation(s)
- Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Burak Guzelturk
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Hong Po
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Ningyuan Fu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Lina Makke
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
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4
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Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays. Nat Commun 2021; 12:1794. [PMID: 33741921 PMCID: PMC7979921 DOI: 10.1038/s41467-021-21959-x] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2020] [Accepted: 02/20/2021] [Indexed: 12/02/2022] Open
Abstract
Narrow band gap nanocrystals offer an interesting platform for alternative design of low-cost infrared sensors. It has been demonstrated that transport in HgTe nanocrystal arrays occurs between strongly-coupled islands of nanocrystals in which charges are partly delocalized. This, combined with the scaling of the noise with the active volume of the film, make case for device size reduction. Here, with two steps of optical lithography we design a nanotrench which effective channel length corresponds to 5–10 nanocrystals, matching the carrier diffusion length. We demonstrate responsivity as high as 1 kA W−1, which is 105 times higher than for conventional µm-scale channel length. In this work the associated specific detectivity exceeds 1012 Jones for 2.5 µm peak detection under 1 V at 200 K and 1 kHz, while the time response is as short as 20 µs, making this performance the highest reported for HgTe NC-based extended short-wave infrared detection. Infrared nanocrystals have become an enabling building block for the design of low-cost infrared sensors. Here, Chu et al. design a nanotrench device geometry at the diffusion length limit in HgTe nanocrystals and demonstrate the record high sensing performance operated in the short-wave infrared.
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5
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Gréboval C, Chu A, Goubet N, Livache C, Ithurria S, Lhuillier E. Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration. Chem Rev 2021; 121:3627-3700. [DOI: 10.1021/acs.chemrev.0c01120] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Charlie Gréboval
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Audrey Chu
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Nicolas Goubet
- CNRS, Laboratoire de la Molécule aux Nano-objets; Réactivité, Interactions et Spectroscopies, MONARIS, Sorbonne Université, 4 Place Jussieu, Case Courier 840, F-75005 Paris, France
| | - Clément Livache
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
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6
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Goubet N, Livache C, Martinez B, Xu XZ, Ithurria S, Royer S, Cruguel H, Patriarche G, Ouerghi A, Silly M, Dubertret B, Lhuillier E. Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties. NANO LETTERS 2018; 18:4590-4597. [PMID: 29812951 DOI: 10.1021/acs.nanolett.8b01861] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The use of intraband transition is an interesting alternative path for the design of optically active complex colloidal materials in the mid-infrared range. However, so far, the performance obtained for photodetection based on intraband transition remains much smaller than the one relying on interband transition in narrow-band-gap materials operating at the same wavelength. New strategies have to be developed to make intraband materials more effective. Here, we propose growing a heterostructure of HgSe/HgTe as a means of achieving enhanced intraband-based photoconduction. We first tackle the synthetic challenge of growing a heterostructure on soft (Hg-based) material. The electronic spectrum of the grown heterostructure is then investigated using a combination of numerical simulation, infrared spectroscopy, transport measurement, and photoemission. We report a type-II band alignment with reduced doping compared with a core-only object and boosted hole conduction. Finally, we probe the photoconductive properties of the heterostructure while resonantly exciting the intraband transition by using a high-power-density quantum cascade laser. Compared to the previous generation of material based on core-only HgSe, the heterostructures have a lower dark current, stronger temperature dependence, faster photoresponse (with a time response below 50 μs), and detectivity increased by a factor of 30.
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Affiliation(s)
- Nicolas Goubet
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Clément Livache
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Bertille Martinez
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Sébastien Royer
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
| | - Hervé Cruguel
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N Marcoussis , 91460 Marcoussis , France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N Marcoussis , 91460 Marcoussis , France
| | - Mathieu Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette , Cedex , France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux , ESPCI-ParisTech , PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS, 10 rue Vauquelin , 75005 Paris , France
| | - Emmanuel Lhuillier
- Sorbonne Université, UPMC Univ. Paris 06, CNRS-UMR 7588 , Institut des NanoSciences de Paris , 4 place Jussieu , 75005 Paris , France
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7
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Martinez B, Livache C, Notemgnou Mouafo LD, Goubet N, Keuleyan S, Cruguel H, Ithurria S, Aubin H, Ouerghi A, Doudin B, Lacaze E, Dubertret B, Silly MG, Lobo RPSM, Dayen JF, Lhuillier E. HgSe Self-Doped Nanocrystals as a Platform to Investigate the Effects of Vanishing Confinement. ACS APPLIED MATERIALS & INTERFACES 2017; 9:36173-36180. [PMID: 28956432 DOI: 10.1021/acsami.7b10665] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Self-doped colloidal quantum dots (CQDs) attract a strong interest for the design of a new generation of low-cost infrared (IR) optoelectronic devices because of their tunable intraband absorption feature in the mid-IR region. However, very little remains known about their electronic structure which combines confinement and an inverted band structure, complicating the design of optimized devices. We use a combination of IR spectroscopy and photoemission to determine the absolute energy levels of HgSe CQDs with various sizes and surface chemistries. We demonstrate that the filling of the CQD states ranges from 2 electrons per CQD at small sizes (<5 nm) to more than 18 electrons per CQD at large sizes (≈20 nm). HgSe CQDs are also an interesting platform to observe vanishing confinement in colloidal nanoparticles. We present lines of evidence for a semiconductor-to-metal transition at the CQD level, through temperature-dependent absorption and transport measurements. In contrast with bulk systems, the transition is the result of the vanishing confinement rather than the increase of the doping level.
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Affiliation(s)
- Bertille Martinez
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris , 4 Place Jussieu, 75005 Paris, France
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
| | - Clément Livache
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris , 4 Place Jussieu, 75005 Paris, France
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
| | | | - Nicolas Goubet
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris , 4 Place Jussieu, 75005 Paris, France
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
| | - Sean Keuleyan
- Voxtel, Inc., University of Oregon, CAMCOR, 1241 University of Oregon , Eugene, Oregon 97403, United States
| | - Hervé Cruguel
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris , 4 Place Jussieu, 75005 Paris, France
| | - Sandrine Ithurria
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
- Sorbonne Universités, UPMC Univ Paris 06, LPEM , 75005 Paris, France
| | - Hervé Aubin
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
- Sorbonne Universités, UPMC Univ Paris 06, LPEM , 75005 Paris, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Marcoussis , 91460 Marcoussis, France
| | - Bernard Doudin
- Université de Strasbourg, IPCMS-CNRS UMR 7504 , 23 Rue du Loess, 67034 Strasbourg, France
| | - Emmanuelle Lacaze
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris , 4 Place Jussieu, 75005 Paris, France
| | - Benoit Dubertret
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
- Sorbonne Universités, UPMC Univ Paris 06, LPEM , 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Ricardo P S M Lobo
- LPEM, ESPCI Paris, PSL Research University , 10 rue Vauquelin, 75005 Paris, France
- Sorbonne Universités, UPMC Univ Paris 06, LPEM , 75005 Paris, France
| | - Jean-François Dayen
- Université de Strasbourg, IPCMS-CNRS UMR 7504 , 23 Rue du Loess, 67034 Strasbourg, France
| | - Emmanuel Lhuillier
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris , 4 Place Jussieu, 75005 Paris, France
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8
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Mir WJ, Assouline A, Livache C, Martinez B, Goubet N, Xu XZ, Patriarche G, Ithurria S, Aubin H, Lhuillier E. Electronic properties of (Sb;Bi) 2Te 3 colloidal heterostructured nanoplates down to the single particle level. Sci Rep 2017; 7:9647. [PMID: 28852056 PMCID: PMC5575357 DOI: 10.1038/s41598-017-09903-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2017] [Accepted: 07/24/2017] [Indexed: 11/09/2022] Open
Abstract
We investigate the potential use of colloidal nanoplates of Sb2Te3 by conducting transport on single particle with in mind their potential use as 3D topological insulator material. We develop a synthetic procedure for the growth of plates with large lateral extension and probe their infrared optical and transport properties. These two properties are used as probe for the determination of the bulk carrier density and agree on a value in the 2–3 × 1019 cm−3 range. Such value is compatible with the metallic side of the Mott criterion which is also confirmed by the weak thermal dependence of the conductance. By investigating the transport at the single particle level we demonstrate that the hole mobility in this system is around 40 cm2V−1s−1. For the bulk material mixing n-type Bi2Te3 with the p-type Sb2Te3 has been a successful way to control the carrier density. Here we apply this approach to the case of colloidally obtained nanoplates by growing a core-shell heterostructure of Sb2Te3/Bi2Te3 and demonstrates a reduction of the carrier density by a factor 2.5.
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Affiliation(s)
- Wasim J Mir
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005, Paris, France.,Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, 411008, India
| | - Alexandre Assouline
- Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005, Paris, France
| | - Clément Livache
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005, Paris, France.,Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005, Paris, France
| | - Bertille Martinez
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005, Paris, France
| | - Nicolas Goubet
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005, Paris, France.,Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005, Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005, Paris, France
| | - Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN), Route de Nozay, 91460, Marcoussis, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005, Paris, France
| | - Hervé Aubin
- Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005, Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005, Paris, France.
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9
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Livache C, Izquierdo E, Martinez B, Dufour M, Pierucci D, Keuleyan S, Cruguel H, Becerra L, Fave JL, Aubin H, Ouerghi A, Lacaze E, Silly MG, Dubertret B, Ithurria S, Lhuillier E. Charge Dynamics and Optolectronic Properties in HgTe Colloidal Quantum Wells. NANO LETTERS 2017; 17:4067-4074. [PMID: 28598629 DOI: 10.1021/acs.nanolett.7b00683] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We investigate the electronic and transport properties of HgTe 2D colloidal quantum wells. We demonstrate that the material can be made p- or n-type depending on the capping ligands. In addition to the control of majority carrier type, the surface chemistry also strongly affects the photoconductivity of the material. These transport measurements are correlated with the electronic structure determined by high resolution X-ray photoemission. We attribute the change of majority carriers to the strong hybridization of an n-doped HgS layer resulting from capping the HgTe nanoplatelets by S2- ions. We further investigate the gate and temperature dependence of the photoresponse and its dynamics. We show that the photocurrent rise and fall times can be tuned from 100 μs to 1 ms using the gate bias. Finally, we use time-resolved photoemission spectroscopy as a probe of the transport relaxation to determine if the observed dynamics are limited by a fundamental process such as trapping. These pump probe surface photovoltage measurements show an even faster relaxation in the 100-500 ns range, which suggests that the current performances are rather limited by geometrical factors.
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Affiliation(s)
- Clément Livache
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Eva Izquierdo
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Bertille Martinez
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Marion Dufour
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- Institut Néel, CNRS-UJF , BP 166, 38042 Grenoble Cedex 9, France
| | - Sean Keuleyan
- Voxtel, Inc., University of Oregon, CAMCOR, 1241 University of Oregon , Eugene, Oregon 97403, United States
| | - Hervé Cruguel
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Loic Becerra
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Jean Louis Fave
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Hervé Aubin
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Emmanuelle Lacaze
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
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