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Zhao X, Ma H, Cai H, Wei Z, Bi Y, Tang X, Qin T. Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5790. [PMID: 37687485 PMCID: PMC10488450 DOI: 10.3390/ma16175790] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 08/01/2023] [Accepted: 08/21/2023] [Indexed: 09/10/2023]
Abstract
Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.
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Affiliation(s)
- Xue Zhao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China; (X.Z.); (H.M.); (X.T.)
| | - Haifei Ma
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China; (X.Z.); (H.M.); (X.T.)
| | - Hongxing Cai
- Physics Department, Changchun University of Science and Technology, Changchun 130022, China; (H.C.); (Z.W.)
| | - Zhipeng Wei
- Physics Department, Changchun University of Science and Technology, Changchun 130022, China; (H.C.); (Z.W.)
| | - Ying Bi
- Beijing Institute of Aerospace Systems Engineering, Beijing 100076, China;
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China; (X.Z.); (H.M.); (X.T.)
| | - Tianling Qin
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China; (X.Z.); (H.M.); (X.T.)
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Malinowski PE, Pejović V, Lieberman I, Kim JH, Siddik AB, Georgitzikis E, Lim MJ, Moreno Hagelsieb L, Hermans Y, Pintor Monroy I, Song W, Basak S, Gehlhaar R, De Roose F, Siskos A, Papadopoulos N, Thijs S, Vershooten T, Chandrasekaran N, Li Y, Soussan P, Genoe J, Heremans P, Lee J, Cheyns D. Image sensors using thin-film absorbers. APPLIED OPTICS 2023; 62:F21-F30. [PMID: 37707127 DOI: 10.1364/ao.485552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 02/26/2023] [Indexed: 09/15/2023]
Abstract
Image sensors are must-have components of most consumer electronics devices. They enable portable camera systems, which find their way into billions of devices annually. Such high volumes are possible thanks to the complementary metal-oxide semiconductor (CMOS) platform, leveraging wafer-scale manufacturing. Silicon photodiodes, at the core of CMOS image sensors, are perfectly suited to replicate human vision. Thin-film absorbers are an alternative family of photoactive materials, distinguished by the layer thickness comparable with or smaller than the wavelength of interest. They allow design of imagers with functionalities beyond Si-based sensors, such as transparency or detectivity at wavelengths above Si cutoff (e.g., short-wave infrared). Thin-film image sensors are an emerging device category. While intensive research is ongoing to achieve sufficient performance of thin-film photodetectors, to our best knowledge, there have been few complete studies on their integration into advanced systems. In this paper, we will describe several types of image sensors being developed at imec, based on organic, quantum dot, and perovskite photodiode and show their figures of merit. We also discuss the methodology for selecting the most appropriate sensor architecture (integration with thin-film transistor or CMOS). Application examples based on imec proof-of-concept sensors are demonstrated to showcase emerging use cases.
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Han Q, Jiang Y, Liu X, Zhang C, Wang J. Light response and adsorption interaction of black phosphorus quantum dots and single-layer graphene phototransistor. FRONTIERS OF OPTOELECTRONICS 2023; 16:9. [PMID: 37222911 DOI: 10.1007/s12200-023-00065-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Accepted: 03/14/2023] [Indexed: 05/25/2023]
Abstract
Black phosphorus quantum dots (BPQDs) are synthesized and combined with graphene sheet. The fabricated BPQDs/graphene devices are capable of detecting visible and near infrared radiation. The adsorption effect of BPQDs in graphene is clarified by the relationship of the photocurrent and the shift of the Dirac point with different substrate. The Dirac point moves toward a neutral point under illumination with both SiO2/Si and Si3N4/Si substrates, indicating an anti-doped feature of photo-excitation. To our knowledge, this provides the first observation of photoresist induced photocurrent in such systems. Without the influence of the photoresist the device can respond to infrared light up to 980 nm wavelength in vacuum in a cryostat, in which the photocurrent is positive and photoconduction effect is believed to dominate the photocurrent. Finally, the adsorption effect is modeled using a first-principle method to give a picture of charge transfer and orbital contribution in the interaction of phosphorus atoms and single-layer graphene.
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Affiliation(s)
- Qi Han
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yadong Jiang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianchao Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chaoyi Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jun Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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La JA, Lee S, Hong AR, Byun JY, Kang J, Han IK, Cho Y, Kang G, Jang HS, Ko H. A Super-Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106225. [PMID: 34796554 DOI: 10.1002/adma.202106225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 10/11/2021] [Indexed: 06/13/2023]
Abstract
A super-boosted hybrid plasmonic upconversion (UC) architecture comprising a hierarchical plasmonic upconversion (HPU) film and a polymeric microlens array (MLA) film is proposed for efficient photodetection at a wavelength of 1550 nm. Plasmonic metasurfaces and Au core-satellite nanoassembly (CSNA) films can strongly induce a more effective plasmonic effect by providing numerous hot spots in an intense local electromagnetic field up to wavelengths exceeding 1550 nm. Hence, significant UC emission enhancement is realized via the amplified plasmonic coupling of an HPU film comprising an Au CSNA and UC nanoparticles. Furthermore, an MLA polymer film is synergistically coupled with the HPU film, thereby focusing the incident near-infrared light in the micrometer region, including the plasmonic nanostructure area. Consequently, the plasmonic effect super-boosted by microfocusing the incident light, significantly lowers the detectable power limit of a device, resulting in superior sensitivity and responsivity at weak excitation powers. Finally, a triple-cation perovskite-based photodetector coupled with the hybrid plasmonic UC film exhibits the excellent values of responsivity and detectivity of 9.80 A W-1 and 8.22 × 1012 Jones at a weak power density of ≈0.03 mW cm-2 , respectively, demonstrating that the device performance is enhanced by more than 104 magnitudes over a reference sample.
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Affiliation(s)
- Ju A La
- Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - Seongyu Lee
- Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - A-Ra Hong
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - Ji Young Byun
- Extreme Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - JoonHyun Kang
- Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - Il Ki Han
- Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - Younghak Cho
- Department of Mechanical System Design Engineering, Seoul National University of Science & Technology, 232 Gongneung-ro, Nowon-gu, Seoul, 01811, South Korea
| | - Gumin Kang
- Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - Ho Seong Jang
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
| | - Hyungduk Ko
- Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 02792, South Korea
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Wang W, Zhang M, Pan Z, Biesold GM, Liang S, Rao H, Lin Z, Zhong X. Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices. Chem Rev 2021; 122:4091-4162. [PMID: 34968050 DOI: 10.1021/acs.chemrev.1c00478] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.
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Affiliation(s)
- Wenran Wang
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Zhenxiao Pan
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Huashang Rao
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Xinhua Zhong
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
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Clark PCJ, Lewis NK, Ke JCR, Ahumada-Lazo R, Chen Q, Neo DCJ, Gaulding EA, Pach GF, Pis I, Silly MG, Flavell WR. Surface band bending and carrier dynamics in colloidal quantum dot solids. NANOSCALE 2021; 13:17793-17806. [PMID: 34668501 DOI: 10.1039/d1nr05436h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device. Whether band bending is intrinsic to CQD solids, i.e. is band bending present at the surface-vacuum interface, has previously been unanswered. Here we use photoemission surface photovoltage measurements to show that depletion regions are present at the surface of n and p-type CQD solids with various ligand treatments (EDT, MPA, PbI2, MAI/PbI2). Using laser-pump photoemission-probe time-resolved measurements, we show that the timescale of carrier dynamics in the surface of CQD solids can vary over at least 6 orders of magnitude, with the fastest dynamics on the order of microseconds in PbS-MAI/PbI2 solids and on the order of seconds for PbS-MPA and PbS-PbI2. By investigating the surface chemistry of the solids, we find a correlation between the carrier dynamics timescales and the presence of oxygen contaminants, which we suggest are responsible for the slower dynamics due to deep trap formation.
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Affiliation(s)
- Pip C J Clark
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Nathan K Lewis
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Jack Chun-Ren Ke
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Ruben Ahumada-Lazo
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Qian Chen
- Department of Materials, The University of Manchester, Manchester M13 9PL, UK
| | - Darren C J Neo
- Department of Chemistry, University of California, Irvine, Irvine, California 92697, USA
| | | | - Gregory F Pach
- National Renewable Energy Laboratory, Golden, CO 80401, USA
| | - Igor Pis
- Laboratorio TASC, IOM CNR, S.S. 14 km 163.5, 34149 Basovizza, Trieste, Italy
- Elettra-Sincrotrone Trieste S.C.p.A., S. S. 14 Km 163.5, 34149 Basovizza, Trieste, Italy
| | - Mathieu G Silly
- Synchrotron SOLEIL, BP 48, Saint-Aubin, F91192 Gif sur Yvette CEDEX, France
| | - Wendy R Flavell
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
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Trifiletti V, Asker C, Tseberlidis G, Riva S, Zhao K, Tang W, Binetti S, Fenwick O. Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity. FRONTIERS IN ELECTRONICS 2021. [DOI: 10.3389/felec.2021.758603] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.
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9
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Chen X, He D, Wu J. High-absorption grating-insulator-metal structures. APPLIED OPTICS 2021; 60:7480-7484. [PMID: 34613037 DOI: 10.1364/ao.427301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 07/20/2021] [Indexed: 06/13/2023]
Abstract
A thin grating-insulator-metal (GIM) structure consisting of a top metal grating layer on a dielectric layer and a bottom metal layer is proposed, which shows a broadband high absorption at a small thickness. This phenomenon is attributed to the appropriate effective surface permittivity of the top grating layer and the cavity resonance of the middle insulator layer. By optimizing the structural and material parameters, the materials of the GIM structure from top to bottom are Mn, Al2O3, and Mn with thicknesses of 10, 70, and 70 nm, respectively. The structure with these optimum parameters is fabricated and characterized, and an improved performance with absorption exceeding 90% in the visible region is obtained using Mn as the metal layers. The experimental results are in good agreement with the numerical values, depicting an ultrabroad absorption bandwidth. The conclusions presented here could have potential applications in optical devices used for optical displacement detection and visible light absorption.
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Zhao X, Jia W, Wang H, Sun Y, Tang X, Zeng X, Lin L. Low-temperature synthesis of zirconium silicate stabilized perovskite quantum dot composite material. ADV POWDER TECHNOL 2021. [DOI: 10.1016/j.apt.2021.05.051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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11
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Grotevent MJ, Hail CU, Yakunin S, Bachmann D, Calame M, Poulikakos D, Kovalenko MV, Shorubalko I. Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003360. [PMID: 33747735 PMCID: PMC7967065 DOI: 10.1002/advs.202003360] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 12/14/2020] [Indexed: 05/03/2023]
Abstract
Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low-cost cameras for self-driving cars require highly sensitive, low-cost photodetector cameras with spectral sensitivities up to wavelengths of 10 µm. For this purpose, colloidal quantum dot (QD) graphene phototransistors offer a viable alternative to traditional technologies owing to inexpensive synthesis and processing of QDs. However, the spectral range of QD/graphene phototransistors is thus far limited to 1.6 µm. Here, HgTe QD/graphene phototransistors with spectral sensitivity up to 3 µm are presented, with specific detectivities of 6 × 108 Jones at a wavelength of 2.5 µm and a temperature of 80 K. Even at kHz light modulation frequencies, specific detectivities exceed 108 Jones making them suitable for fast video imaging. The simple device architecture and QD film patterning in combination with a broad spectral sensitivity manifest an important step toward low-cost, multi-color infrared cameras.
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Affiliation(s)
- Matthias J. Grotevent
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Claudio U. Hail
- Department of Mechanical and Process EngineeringETH ZurichSonneggstrasse 3ZurichCH‐8092Switzerland
| | - Sergii Yakunin
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Thin Films and PhotovoltaicsSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Dominik Bachmann
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Michel Calame
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
- Department of PhysicsUniversity of BaselKlingelbergstrasse 82BaselCH‐4056Switzerland
| | - Dimos Poulikakos
- Department of Mechanical and Process EngineeringETH ZurichSonneggstrasse 3ZurichCH‐8092Switzerland
| | - Maksym V. Kovalenko
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Thin Films and PhotovoltaicsSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Ivan Shorubalko
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
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Wang HP, Li S, Liu X, Shi Z, Fang X, He JH. Low-Dimensional Metal Halide Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003309. [PMID: 33346383 DOI: 10.1002/adma.202003309] [Citation(s) in RCA: 157] [Impact Index Per Article: 52.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2020] [Revised: 07/21/2020] [Indexed: 05/24/2023]
Abstract
Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.
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Affiliation(s)
- Hsin-Ping Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xinya Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
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Grotevent MJ, Hail CU, Yakunin S, Bachmann D, Kara G, Dirin DN, Calame M, Poulikakos D, Kovalenko MV, Shorubalko I. Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:848-856. [PMID: 33350310 DOI: 10.1021/acsami.0c15226] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infrared light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene phototransistors by performing steady-state and time-dependent measurements over a large temperature range of 80-300 K. We find that the temperature dependence of photoinduced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 1010 Jones at a wavelength of 1280 nm and a temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate voltage-dependent characterization presented here constitutes an important step in expanding our knowledge of charge transfer at interfaces of low-dimensional materials and toward the realization of next-generation optoelectronic devices.
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Affiliation(s)
- Matthias J Grotevent
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Claudio U Hail
- Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
| | - Sergii Yakunin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Dominik Bachmann
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Gökhan Kara
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Dmitry N Dirin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Michel Calame
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Dimos Poulikakos
- Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Ivan Shorubalko
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
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14
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Chowdhury FA, Pradhan B, Ding Y, Towers A, Gesquiere A, Tetard L, Thomas J. Perovskite Quantum Dot-Reduced Graphene Oxide Superstructure for Efficient Photodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:45165-45173. [PMID: 32897694 DOI: 10.1021/acsami.0c11966] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
High-performance photodetectors require efficient photogeneration and charge transport. Perovskite quantum dots (PQDs) have received enormous interest for applications in optoelectronics due to their high photogeneration efficiency. However, they offer meager carrier transport. Reduced graphene oxide (RGO) exhibits inferior photoresponse compared to materials such as quantum dots. An effective synthesis protocol to grow PQDs from the RGO lattice may facilitate direct charge transfers from PQDs to RGO, which could not be accomplished by mixing individual PQDs with RGO or making a bilayer. At ambient condition, the photodetector fabricated with the PQD-RGO superstructure showed high responsivity of 1.07 × 103 A/W, detectivity of 1 × 1013 Jones as well as sharp switching in the visible wavelength. After 3 months in an unencapsulated sample, the photocurrent was decreased ∼10% of its initial value while preserving speed and cycle stability at ambient condition.
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Affiliation(s)
- Farzana A Chowdhury
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Basudev Pradhan
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Yi Ding
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Andrew Towers
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
| | - Andre Gesquiere
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Chemistry, University of Central Florida, Orlando, Florida 32816, United States
| | - Laurene Tetard
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Physics, University of Central Florida, Orlando, Florida 32816, United States
| | - Jayan Thomas
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
- CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816, United States
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15
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Chen X, Shehzad K, Gao L, Long M, Guo H, Qin S, Wang X, Wang F, Shi Y, Hu W, Xu Y, Wang X. Graphene Hybrid Structures for Integrated and Flexible Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1902039. [PMID: 31282020 DOI: 10.1002/adma.201902039] [Citation(s) in RCA: 49] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2019] [Revised: 05/03/2019] [Indexed: 05/13/2023]
Abstract
Graphene (Gr) has many unique properties including gapless band structure, ultrafast carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast, broadband, and flexible optoelectronics. To overcome its intrinsic limit of low absorption, hybrid structures are exploited to improve the device performance. Particularly, van der Waals heterostructures with different photosensitive materials and photonic structures are very effective for improving photodetection and modulation efficiency. With such hybrid structures, Gr hybrid photodetectors can operate from ultraviolet to terahertz, with significantly improved R (up to 109 A W-1 ) and bandwidth (up to 128 GHz). Furthermore, integration of Gr with silicon (Si) complementary metal-oxide-semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics. Here, the recent progress in using Gr hybrid structures toward high-performance photodetectors and integrated optoelectronic applications is reviewed.
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Affiliation(s)
- Xiaoqing Chen
- School of Microelectronics, Xidian University, Xian, 710071, China
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Khurram Shehzad
- College of Information Science and Electronic Engineering, College of Microelectronics, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Li Gao
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210046, China
| | - Mingsheng Long
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Hui Guo
- School of Microelectronics, Xidian University, Xian, 710071, China
| | - Shuchao Qin
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xiaomu Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Fengqiu Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Weida Hu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Yang Xu
- College of Information Science and Electronic Engineering, College of Microelectronics, ZJU-UIUC Joint Institute, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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16
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Liu CK, Tai Q, Wang N, Tang G, Hu Z, Yan F. Lead-Free Perovskite/Organic Semiconductor Vertical Heterojunction for Highly Sensitive Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18769-18776. [PMID: 32212606 DOI: 10.1021/acsami.0c01202] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In recent years, photodetectors based on organic-inorganic lead halide perovskites have been studied extensively. However, the inclusion of lead in those materials can cause severe human health and environmental problems, which is undesirable for practical applications. Here, we report high-performance photodetectors with a tin-based perovskite/PEDOT:PSS vertical heterojunction. The device demonstrates a broadband photoresponse from NIR to UV. The maximum responsivity and gain are up to 2.6 × 106 A/W and 4.7 × 106, respectively. Moreover, a much shorter response time and higher detectivity can be achieved by reducing the thickness of PEDOT:PSS. The outstanding performance is due to the excellent optoelectronic properties of the perovskite and the photogating effect originating from the heterojunction. Furthermore, devices fabricated on flexible substrates can demonstrate not only high sensitivity but also excellent bending stability. This work opens up the opportunity of using lead-free perovskite in highly sensitive photodetectors with vertical heterojunctions.
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Affiliation(s)
- Chun-Ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Qidong Tai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Naixiang Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Guanqi Tang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Zhao Hu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong
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17
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Tian W, Min L, Cao F, Li L. Nested Inverse Opal Perovskite toward Superior Flexible and Self-Powered Photodetection Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906974. [PMID: 32105367 DOI: 10.1002/adma.201906974] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Revised: 12/05/2019] [Indexed: 06/10/2023]
Abstract
Flexible and self-powered perovskite photodetectors have attracted tremendous research interests due to their applications in wearable and portable devices. However, the conventional planar structured photodetectors are always accompanied with limited device performance and undesired mechanical stability. Herein, a nested inverse opal (NIO) structured perovskite photodetector via a facile template-assisted spin-coating method is reported. The coupling effect of enhanced light capture, increased carrier transport, and improved perovskite film quality enables NIO device to exhibit superior photoresponse performance. The NIO photodetector exhibits a high responsivity of 473 mA W-1 and detectivity up to 1.35 × 1013 Jones at 720 nm without external bias. The NIO structure can efficiently release mechanical stress during the bending process and the photocurrent has no degradation even after 500 cycles of bending. Moreover, the unencapsulated NIO device can operate for over 16 d under ambient conditions, presenting a significantly enhanced environmental stability compared to the planar device. This work demonstrates that deliberate structural design is an effective avenue for constructing self-powered, flexible, and stable optoelectronic devices.
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Affiliation(s)
- Wei Tian
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
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18
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Bera KP, Haider G, Huang YT, Roy PK, Paul Inbaraj CR, Liao YM, Lin HI, Lu CH, Shen C, Shih WY, Shih WH, Chen YF. Graphene Sandwich Stable Perovskite Quantum-Dot Light-Emissive Ultrasensitive and Ultrafast Broadband Vertical Phototransistors. ACS NANO 2019; 13:12540-12552. [PMID: 31617700 DOI: 10.1021/acsnano.9b03165] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Dual-functional devices that can simultaneously detect light and emit light have a tremendous appeal for multiple applications, including displays, sensors, defense, and high-speed optical communication. Despite the tremendous efforts of scientists, the progress of integration of a phototransistor, where the built-in electric field separates the photogenerated excitons, and a light-emitting diode, where the radiative recombination can be enhanced by band offset, into a single device remains a challenge. Combining the superior properties of perovskite quantum dots (PQDs) and graphene, here we report a light-emissive, ultrasensitive, ultrafast, and broadband vertical phototransistor that can simultaneously act as an efficient photodetector and light emitter within a single device. The estimated value of the external quantum efficiency of the vertical phototransistor is ∼1.2 × 1010% with a photoresponsivity of >109 A W-1 and a response time of <50 μs, which exceed all the presently reported vertical phototransistor devices. We also demonstrate that the modulation of the Dirac point of graphene efficiently tunes both amplitude and polarity of the photocurrent. The device exhibits a green emission having a quantum efficiency of 5.6%. The moisture-insensitive and environmentally stable, light-emissive, ultrafast, and ultrasensitive broadband phototransistor creates a useful route for dual-functional optoelectronic devices.
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Affiliation(s)
- Krishna Prasad Bera
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program , Academia Sinica , Taipei 106 , Taiwan
| | - Golam Haider
- J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences , Prague 8 , Czech Republic
| | - Yu-Ting Huang
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
| | - Pradip Kumar Roy
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
| | - Christy Roshini Paul Inbaraj
- Nano-Science and Technology Program, Taiwan International Graduate Program , Academia Sinica , Taipei 106 , Taiwan
- Department of Engineering and System Science , National Tsing Hua University , Hsinchu 300 , Taiwan
| | - Yu-Ming Liao
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program , Academia Sinica , Taipei 106 , Taiwan
| | - Hung-I Lin
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
| | - Cheng-Hsin Lu
- Department of Materials Science and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | - Chun Shen
- Department of Materials Science and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | - Wan Y Shih
- School of Biomedical Engineering, Science, and Health Systems, Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | - Wei-Heng Shih
- Department of Materials Science and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | - Yang-Fang Chen
- Department of Physics , National Taiwan University , Taipei 106 , Taiwan
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19
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Guyot-Sionnest P, Ackerman MM, Tang X. Colloidal quantum dots for infrared detection beyond silicon. J Chem Phys 2019. [DOI: 10.1063/1.5115501] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023] Open
Affiliation(s)
- Philippe Guyot-Sionnest
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| | - Matthew M. Ackerman
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| | - Xin Tang
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
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20
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Mondal N, De A, Das S, Paul S, Samanta A. Ultrafast carrier dynamics of metal halide perovskite nanocrystals and perovskite-composites. NANOSCALE 2019; 11:9796-9818. [PMID: 31070653 DOI: 10.1039/c9nr01745c] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Perovskite nanocrystals (NCs), especially those based on cesium lead halides, have emerged in recent years as highly promising materials for efficient solar cells and photonic applications. The key to realization of full potential of these materials lies however in the molecular level understanding of the processes triggered by light. Herein we highlight the knowledge gained from photophysical investigations on these NCs of various sizes and compositions employing primarily the femtosecond pump-probe technique. We show how spectral and temporal characterization of the photo-induced transients provide insight into the mechanism and dynamics of relaxation of hot and thermalized charge carriers through their recombination and trapping. We discuss how the multiple excitons including the charged ones (trions), generated using high pump fluence or photon energy, recombine through the Auger-assisted process. We discussed the harvesting of hot carriers prior to their cooling and band-edge carriers from these perovskite NCs to wide band-gap metal oxides, metal chalcogenide NCs and molecular acceptors. How perovskites can influence the charge carrier dynamics in composites of organic and inorganic semiconductors is also discussed.
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Affiliation(s)
- Navendu Mondal
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India. E-mail:
| | - Apurba De
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India. E-mail:
| | - Somnath Das
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India. E-mail:
| | - Sumanta Paul
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India. E-mail:
| | - Anunay Samanta
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India. E-mail:
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21
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Zhang DD, Yu RM. Perovskite-WS 2 Nanosheet Composite Optical Absorbers on Graphene as High-Performance Phototransistors. Front Chem 2019; 7:257. [PMID: 31139610 PMCID: PMC6518953 DOI: 10.3389/fchem.2019.00257] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Accepted: 04/01/2019] [Indexed: 11/13/2022] Open
Abstract
High-responsivity phototransistors with a structure of perovskite-WS2 nanosheet composite optical absorber and a reduced graphene oxide (rGO) channel layer is demonstrated via a facile and low-cost solution-processing method. The WS2 nanosheets are dispersed within the perovskite matrix, forming the perovskite-WS2 bulk heterojunction (BHJ). The hybrid phototransistor exhibits excellent figures of merit including high photoresponsivity of 678.8 A/W, high specific detectivity of 4.99 × 1011 Jones, high EQE value of 2.04 × 105% and rapid response to photoswitching. The high photoresponsivity could be attributed to the WS2 nanosheets induced photo-generated electron-hole separation promotion effects due to the selective electron trapping effects in the WS2 nanosheets, together with the high carrier mobility of the rGO channel. This work provides a promising platform for constructing high-responsivity photodetectors.
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Affiliation(s)
- Dan-Dan Zhang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, China
| | - Rong-Mei Yu
- College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang, China
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22
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Lu L, Zhou L, Chen J, Yan F, Liu J, Dong X, Xi F, Chen P. Nanochannel-Confined Graphene Quantum Dots for Ultrasensitive Electrochemical Analysis of Complex Samples. ACS NANO 2018; 12:12673-12681. [PMID: 30485066 DOI: 10.1021/acsnano.8b07564] [Citation(s) in RCA: 85] [Impact Index Per Article: 14.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Herein, we present an electrochemical sensing platform based on nanochannel-confined graphene quantum dots (GQDs) that is able to detect a spectrum of small analytes in complex samples with high sensitivity. Vertically ordered mesoporous silica-nanochannel film (VMSF) is decorated on the supporting electrode, conferring the electrode with excellent antifouling and anti-interference properties through steric exclusion and electrostatic repulsion. The synthesized GQDs with different functionalities are confined in the nanochannels of VMSF through electrophoresis, serving as the recognition element and signal amplifier. Without the usual need of tedious pretreatment, ultrasensitive and fast detection of Hg2+, Cu2+, and Cd2+ (with limits of detection (LOD) of 9.8 pM, 8.3 pM, and 4.3 nM, respectively) and dopamine (LOD of 120 nM) in complex food (Hg2+-contaminated seafood), environmental (soil-leaching solution), and biological (serum) samples are realized as proof-of-concept demonstrations.
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Affiliation(s)
- Lili Lu
- Department of Chemistry , Zhejiang Sci-Tech University , 928 Second Avenue, Xiasha Higher Education Zone , Hangzhou 310018 , PR China
| | - Lin Zhou
- Department of Chemistry , Zhejiang Sci-Tech University , 928 Second Avenue, Xiasha Higher Education Zone , Hangzhou 310018 , PR China
| | - Jie Chen
- School of Chemical & Biomedical Engineering , Nanyang Technological University , 70 Nanyang Drive , Singapore 637457
| | - Fei Yan
- Department of Chemistry , Zhejiang Sci-Tech University , 928 Second Avenue, Xiasha Higher Education Zone , Hangzhou 310018 , PR China
| | - Jiyang Liu
- Department of Chemistry , Zhejiang Sci-Tech University , 928 Second Avenue, Xiasha Higher Education Zone , Hangzhou 310018 , PR China
| | - Xiaoping Dong
- Department of Chemistry , Zhejiang Sci-Tech University , 928 Second Avenue, Xiasha Higher Education Zone , Hangzhou 310018 , PR China
| | - Fengna Xi
- Department of Chemistry , Zhejiang Sci-Tech University , 928 Second Avenue, Xiasha Higher Education Zone , Hangzhou 310018 , PR China
| | - Peng Chen
- School of Chemical & Biomedical Engineering , Nanyang Technological University , 70 Nanyang Drive , Singapore 637457
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23
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Zhou R, Yang Z, Xu J, Cao G. Synergistic combination of semiconductor quantum dots and organic-inorganic halide perovskites for hybrid solar cells. Coord Chem Rev 2018. [DOI: 10.1016/j.ccr.2018.07.009] [Citation(s) in RCA: 40] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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24
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De Sanctis A, Mehew JD, Craciun MF, Russo S. Graphene-Based Light Sensing: Fabrication, Characterisation, Physical Properties and Performance. MATERIALS 2018; 11:ma11091762. [PMID: 30231517 PMCID: PMC6163333 DOI: 10.3390/ma11091762] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2018] [Revised: 09/12/2018] [Accepted: 09/13/2018] [Indexed: 12/18/2022]
Abstract
Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl 3 is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of devices with high gain and responsivity. In this work, we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse, the performance and possible future paths of investigation.
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Affiliation(s)
- Adolfo De Sanctis
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
| | - Jake D Mehew
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
| | - Monica F Craciun
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
| | - Saverio Russo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QL, UK.
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25
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Clark PCJ, Neo DCJ, Ahumada-Lazo R, Williamson AI, Pis I, Nappini S, Watt AAR, Flavell WR. Influence of Multistep Surface Passivation on the Performance of PbS Colloidal Quantum Dot Solar Cells. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:8887-8897. [PMID: 29975548 DOI: 10.1021/acs.langmuir.8b01453] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The performance of devices containing colloidal quantum dot (CQD) films is strongly dependent on the surface chemistry of the CQDs they contain. Multistep surface treatments, which combine two or more strategies, are important for creating films with high carrier mobility that are well passivated against trap states and oxidation. Here, we examine the effect of a number of these surface treatments on PbS CQD films, including cation exchange to form PbS/CdS core/shell CQDs, and solid-state ligand-exchange treatments with Cl, Br, I, and 1,2-ethanedithiol (EDT) ligands. Using laboratory-based and synchrotron-radiation-excited X-ray photoelectron spectroscopy (XPS), we examine the compositions of the surface layer before and after treatment, and correlate this with the performance data and stability in air. We find that halide ion treatments may etch the CQD surfaces, with detrimental effects on the air stability and solar cell device performance caused by a reduction in the proportion of passivated surface sites. We show that films made up of PbS/CdS CQDs are particularly prone to this, suggesting Cd is more easily etched from the surface than Pb. However, by choosing a less aggressive ligand treatment, a good coverage of passivators on the surface can be achieved. We show that halide anions bind preferentially to surface Pb (rather than Cd). By isolating the part of XPS signal originating from the topmost surface layer of the CQD, we show that air stability is correlated with the total number of passivating agents (halide + EDT + Cd) at the surface.
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Affiliation(s)
- Pip C J Clark
- School of Physics and Astronomy and the Photon Science Institute , The University of Manchester , Manchester M13 9PL , United Kingdom
| | - Darren C J Neo
- Department of Materials , University of Oxford , 16 Parks Road , Oxford OX1 3PH , United Kingdom
| | - Ruben Ahumada-Lazo
- School of Physics and Astronomy and the Photon Science Institute , The University of Manchester , Manchester M13 9PL , United Kingdom
| | - Andrew I Williamson
- School of Physics and Astronomy and the Photon Science Institute , The University of Manchester , Manchester M13 9PL , United Kingdom
| | - Igor Pis
- Elettra-Sincrotrone Trieste S.C.p.A. , S. S. 14 km 163.5 , Basovizza 34149 , Trieste , Italy
| | - Silvia Nappini
- Laboratorio TASC, IOM CNR , S. S. 14 km 163.5 , Basovizza 34149 , Trieste , Italy
| | - Andrew A R Watt
- Department of Materials , University of Oxford , 16 Parks Road , Oxford OX1 3PH , United Kingdom
| | - Wendy R Flavell
- School of Physics and Astronomy and the Photon Science Institute , The University of Manchester , Manchester M13 9PL , United Kingdom
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Large-Area, Cost-Effective, Ultra-Broadband Perfect Absorber Utilizing Manganese in Metal-Insulator-Metal Structure. Sci Rep 2018; 8:9162. [PMID: 29907773 PMCID: PMC6003956 DOI: 10.1038/s41598-018-27397-y] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2018] [Accepted: 06/01/2018] [Indexed: 11/09/2022] Open
Abstract
Achieving broadband absorption has been a topic of intensive research over the last decade. However, the costly and time consuming stage of lithography has always been a barrier for the large-area and mass production of absorbers. In this work, we designed, fabricated, and characterized a lithography-free, large-area compatible, omni-directional, ultra-broadband absorber that consists of the simplest geometrical configuration for absorbers: Metal-Insulator-Metal (MIM). We introduced and utilized Manganese (Mn) for the first time as a very promising metal for broadband absorption applications. We optimized the structure step-by-step and compared Mn against the other best candidates introduced so far in broadband absorption structures and showed the better performance of Mn compared to them. It also has the advantage of being cheaper compared to metals like gold that has been utilized in many patterned broadband absorbers. We also presented the circuit model of the structure. We experimentally achieved over 94 percent average absorption in the range of 400-900 nm (visible and above) and we obtained absorption as high as 99.6 percent at the wavelength of 626.4 nm. We also experimentally demonstrated that this structure retains broadband absorption for large angles up to 70 degrees.
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Zhang ZX, Tong XW, Gao Y, Xie C, Tsang YH, Luo LB, Wu YC. Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe 2/Perovskite Heterojunctions. J Phys Chem Lett 2018; 9:1185-1194. [PMID: 29464954 DOI: 10.1021/acs.jpclett.8b00266] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large Ilight/ Idark ratio of 5.7 × 103, high responsivity of 117.7 mA W-1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications.
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Affiliation(s)
- Zhi-Xiang Zhang
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Xiao-Wei Tong
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Yang Gao
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Chao Xie
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Yuen Hong Tsang
- Department of Applied Physics and Materials Research Center , Hong Kong Polytechnic University , Hung Hom, Kowloon , Hong Kong 99077 , PR China
| | - Lin-Bao Luo
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices , Hefei University of Technology , Hefei 230009 , PR China
| | - Yu-Cheng Wu
- School of Materials Science and Engineering , Hefei University of Technology , Hefei , Anhui 230009 , PR China
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