Compound Quantum Dot-Perovskite Optical Absorbers on Graphene Enhancing Short-Wave Infrared Photodetection

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

Image sensors using thin-film absorbers

Image sensors are must-have components of most consumer electronics devices. They enable portable camera systems, which find their way into billions of devices annually. Such high volumes are possible thanks to the complementary metal-oxide semiconductor (CMOS) platform, leveraging wafer-scale manufacturing. Silicon photodiodes, at the core of CMOS image sensors, are perfectly suited to replicate human vision. Thin-film absorbers are an alternative family of photoactive materials, distinguished by the layer thickness comparable with or smaller than the wavelength of interest. They allow design of imagers with functionalities beyond Si-based sensors, such as transparency or detectivity at wavelengths above Si cutoff (e.g., short-wave infrared). Thin-film image sensors are an emerging device category. While intensive research is ongoing to achieve sufficient performance of thin-film photodetectors, to our best knowledge, there have been few complete studies on their integration into advanced systems. In this paper, we will describe several types of image sensors being developed at imec, based on organic, quantum dot, and perovskite photodiode and show their figures of merit. We also discuss the methodology for selecting the most appropriate sensor architecture (integration with thin-film transistor or CMOS). Application examples based on imec proof-of-concept sensors are demonstrated to showcase emerging use cases.

Light response and adsorption interaction of black phosphorus quantum dots and single-layer graphene phototransistor

Black phosphorus quantum dots (BPQDs) are synthesized and combined with graphene sheet. The fabricated BPQDs/graphene devices are capable of detecting visible and near infrared radiation. The adsorption effect of BPQDs in graphene is clarified by the relationship of the photocurrent and the shift of the Dirac point with different substrate. The Dirac point moves toward a neutral point under illumination with both SiO₂/Si and Si₃N₄/Si substrates, indicating an anti-doped feature of photo-excitation. To our knowledge, this provides the first observation of photoresist induced photocurrent in such systems. Without the influence of the photoresist the device can respond to infrared light up to 980 nm wavelength in vacuum in a cryostat, in which the photocurrent is positive and photoconduction effect is believed to dominate the photocurrent. Finally, the adsorption effect is modeled using a first-principle method to give a picture of charge transfer and orbital contribution in the interaction of phosphorus atoms and single-layer graphene.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

A Super-Boosted Hybrid Plasmonic Upconversion Process for Photodetection at 1550 nm Wavelength

A super-boosted hybrid plasmonic upconversion (UC) architecture comprising a hierarchical plasmonic upconversion (HPU) film and a polymeric microlens array (MLA) film is proposed for efficient photodetection at a wavelength of 1550 nm. Plasmonic metasurfaces and Au core-satellite nanoassembly (CSNA) films can strongly induce a more effective plasmonic effect by providing numerous hot spots in an intense local electromagnetic field up to wavelengths exceeding 1550 nm. Hence, significant UC emission enhancement is realized via the amplified plasmonic coupling of an HPU film comprising an Au CSNA and UC nanoparticles. Furthermore, an MLA polymer film is synergistically coupled with the HPU film, thereby focusing the incident near-infrared light in the micrometer region, including the plasmonic nanostructure area. Consequently, the plasmonic effect super-boosted by microfocusing the incident light, significantly lowers the detectable power limit of a device, resulting in superior sensitivity and responsivity at weak excitation powers. Finally, a triple-cation perovskite-based photodetector coupled with the hybrid plasmonic UC film exhibits the excellent values of responsivity and detectivity of 9.80 A W^-1 and 8.22 × 10¹² Jones at a weak power density of ≈0.03 mW cm^-2 , respectively, demonstrating that the device performance is enhanced by more than 10⁴ magnitudes over a reference sample.

Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices

Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.

Surface band bending and carrier dynamics in colloidal quantum dot solids

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device. Whether band bending is intrinsic to CQD solids, i.e. is band bending present at the surface-vacuum interface, has previously been unanswered. Here we use photoemission surface photovoltage measurements to show that depletion regions are present at the surface of n and p-type CQD solids with various ligand treatments (EDT, MPA, PbI₂, MAI/PbI₂). Using laser-pump photoemission-probe time-resolved measurements, we show that the timescale of carrier dynamics in the surface of CQD solids can vary over at least 6 orders of magnitude, with the fastest dynamics on the order of microseconds in PbS-MAI/PbI₂ solids and on the order of seconds for PbS-MPA and PbS-PbI₂. By investigating the surface chemistry of the solids, we find a correlation between the carrier dynamics timescales and the presence of oxygen contaminants, which we suggest are responsible for the slower dynamics due to deep trap formation.

Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity

In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.

High-absorption grating-insulator-metal structures

A thin grating-insulator-metal (GIM) structure consisting of a top metal grating layer on a dielectric layer and a bottom metal layer is proposed, which shows a broadband high absorption at a small thickness. This phenomenon is attributed to the appropriate effective surface permittivity of the top grating layer and the cavity resonance of the middle insulator layer. By optimizing the structural and material parameters, the materials of the GIM structure from top to bottom are Mn, Al₂O₃, and Mn with thicknesses of 10, 70, and 70 nm, respectively. The structure with these optimum parameters is fabricated and characterized, and an improved performance with absorption exceeding 90% in the visible region is obtained using Mn as the metal layers. The experimental results are in good agreement with the numerical values, depicting an ultrabroad absorption bandwidth. The conclusions presented here could have potential applications in optical devices used for optical displacement detection and visible light absorption.

Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm

Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low-cost cameras for self-driving cars require highly sensitive, low-cost photodetector cameras with spectral sensitivities up to wavelengths of 10 µm. For this purpose, colloidal quantum dot (QD) graphene phototransistors offer a viable alternative to traditional technologies owing to inexpensive synthesis and processing of QDs. However, the spectral range of QD/graphene phototransistors is thus far limited to 1.6 µm. Here, HgTe QD/graphene phototransistors with spectral sensitivity up to 3 µm are presented, with specific detectivities of 6 × 108 Jones at a wavelength of 2.5 µm and a temperature of 80 K. Even at kHz light modulation frequencies, specific detectivities exceed 108 Jones making them suitable for fast video imaging. The simple device architecture and QD film patterning in combination with a broad spectral sensitivity manifest an important step toward low-cost, multi-color infrared cameras.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infrared light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene phototransistors by performing steady-state and time-dependent measurements over a large temperature range of 80-300 K. We find that the temperature dependence of photoinduced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 10¹⁰ Jones at a wavelength of 1280 nm and a temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate voltage-dependent characterization presented here constitutes an important step in expanding our knowledge of charge transfer at interfaces of low-dimensional materials and toward the realization of next-generation optoelectronic devices.

Perovskite Quantum Dot-Reduced Graphene Oxide Superstructure for Efficient Photodetection

High-performance photodetectors require efficient photogeneration and charge transport. Perovskite quantum dots (PQDs) have received enormous interest for applications in optoelectronics due to their high photogeneration efficiency. However, they offer meager carrier transport. Reduced graphene oxide (RGO) exhibits inferior photoresponse compared to materials such as quantum dots. An effective synthesis protocol to grow PQDs from the RGO lattice may facilitate direct charge transfers from PQDs to RGO, which could not be accomplished by mixing individual PQDs with RGO or making a bilayer. At ambient condition, the photodetector fabricated with the PQD-RGO superstructure showed high responsivity of 1.07 × 10³ A/W, detectivity of 1 × 10¹³ Jones as well as sharp switching in the visible wavelength. After 3 months in an unencapsulated sample, the photocurrent was decreased ∼10% of its initial value while preserving speed and cycle stability at ambient condition.

Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

Graphene (Gr) has many unique properties including gapless band structure, ultrafast carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast, broadband, and flexible optoelectronics. To overcome its intrinsic limit of low absorption, hybrid structures are exploited to improve the device performance. Particularly, van der Waals heterostructures with different photosensitive materials and photonic structures are very effective for improving photodetection and modulation efficiency. With such hybrid structures, Gr hybrid photodetectors can operate from ultraviolet to terahertz, with significantly improved R (up to 10⁹ A W^-1 ) and bandwidth (up to 128 GHz). Furthermore, integration of Gr with silicon (Si) complementary metal-oxide-semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics. Here, the recent progress in using Gr hybrid structures toward high-performance photodetectors and integrated optoelectronic applications is reviewed.

Lead-Free Perovskite/Organic Semiconductor Vertical Heterojunction for Highly Sensitive Photodetectors

In recent years, photodetectors based on organic-inorganic lead halide perovskites have been studied extensively. However, the inclusion of lead in those materials can cause severe human health and environmental problems, which is undesirable for practical applications. Here, we report high-performance photodetectors with a tin-based perovskite/PEDOT:PSS vertical heterojunction. The device demonstrates a broadband photoresponse from NIR to UV. The maximum responsivity and gain are up to 2.6 × 10⁶ A/W and 4.7 × 10⁶, respectively. Moreover, a much shorter response time and higher detectivity can be achieved by reducing the thickness of PEDOT:PSS. The outstanding performance is due to the excellent optoelectronic properties of the perovskite and the photogating effect originating from the heterojunction. Furthermore, devices fabricated on flexible substrates can demonstrate not only high sensitivity but also excellent bending stability. This work opens up the opportunity of using lead-free perovskite in highly sensitive photodetectors with vertical heterojunctions.

Nested Inverse Opal Perovskite toward Superior Flexible and Self-Powered Photodetection Performance

Flexible and self-powered perovskite photodetectors have attracted tremendous research interests due to their applications in wearable and portable devices. However, the conventional planar structured photodetectors are always accompanied with limited device performance and undesired mechanical stability. Herein, a nested inverse opal (NIO) structured perovskite photodetector via a facile template-assisted spin-coating method is reported. The coupling effect of enhanced light capture, increased carrier transport, and improved perovskite film quality enables NIO device to exhibit superior photoresponse performance. The NIO photodetector exhibits a high responsivity of 473 mA W^-1 and detectivity up to 1.35 × 10¹³ Jones at 720 nm without external bias. The NIO structure can efficiently release mechanical stress during the bending process and the photocurrent has no degradation even after 500 cycles of bending. Moreover, the unencapsulated NIO device can operate for over 16 d under ambient conditions, presenting a significantly enhanced environmental stability compared to the planar device. This work demonstrates that deliberate structural design is an effective avenue for constructing self-powered, flexible, and stable optoelectronic devices.

Graphene Sandwich Stable Perovskite Quantum-Dot Light-Emissive Ultrasensitive and Ultrafast Broadband Vertical Phototransistors

Dual-functional devices that can simultaneously detect light and emit light have a tremendous appeal for multiple applications, including displays, sensors, defense, and high-speed optical communication. Despite the tremendous efforts of scientists, the progress of integration of a phototransistor, where the built-in electric field separates the photogenerated excitons, and a light-emitting diode, where the radiative recombination can be enhanced by band offset, into a single device remains a challenge. Combining the superior properties of perovskite quantum dots (PQDs) and graphene, here we report a light-emissive, ultrasensitive, ultrafast, and broadband vertical phototransistor that can simultaneously act as an efficient photodetector and light emitter within a single device. The estimated value of the external quantum efficiency of the vertical phototransistor is ∼1.2 × 10¹⁰% with a photoresponsivity of >10⁹ A W^-1 and a response time of <50 μs, which exceed all the presently reported vertical phototransistor devices. We also demonstrate that the modulation of the Dirac point of graphene efficiently tunes both amplitude and polarity of the photocurrent. The device exhibits a green emission having a quantum efficiency of 5.6%. The moisture-insensitive and environmentally stable, light-emissive, ultrafast, and ultrasensitive broadband phototransistor creates a useful route for dual-functional optoelectronic devices.

Ultrafast carrier dynamics of metal halide perovskite nanocrystals and perovskite-composites

Perovskite nanocrystals (NCs), especially those based on cesium lead halides, have emerged in recent years as highly promising materials for efficient solar cells and photonic applications. The key to realization of full potential of these materials lies however in the molecular level understanding of the processes triggered by light. Herein we highlight the knowledge gained from photophysical investigations on these NCs of various sizes and compositions employing primarily the femtosecond pump-probe technique. We show how spectral and temporal characterization of the photo-induced transients provide insight into the mechanism and dynamics of relaxation of hot and thermalized charge carriers through their recombination and trapping. We discuss how the multiple excitons including the charged ones (trions), generated using high pump fluence or photon energy, recombine through the Auger-assisted process. We discussed the harvesting of hot carriers prior to their cooling and band-edge carriers from these perovskite NCs to wide band-gap metal oxides, metal chalcogenide NCs and molecular acceptors. How perovskites can influence the charge carrier dynamics in composites of organic and inorganic semiconductors is also discussed.

Perovskite-WS2 Nanosheet Composite Optical Absorbers on Graphene as High-Performance Phototransistors

High-responsivity phototransistors with a structure of perovskite-WS₂ nanosheet composite optical absorber and a reduced graphene oxide (rGO) channel layer is demonstrated via a facile and low-cost solution-processing method. The WS₂ nanosheets are dispersed within the perovskite matrix, forming the perovskite-WS₂ bulk heterojunction (BHJ). The hybrid phototransistor exhibits excellent figures of merit including high photoresponsivity of 678.8 A/W, high specific detectivity of 4.99 × 10¹¹ Jones, high EQE value of 2.04 × 10⁵% and rapid response to photoswitching. The high photoresponsivity could be attributed to the WS₂ nanosheets induced photo-generated electron-hole separation promotion effects due to the selective electron trapping effects in the WS₂ nanosheets, together with the high carrier mobility of the rGO channel. This work provides a promising platform for constructing high-responsivity photodetectors.

Nanochannel-Confined Graphene Quantum Dots for Ultrasensitive Electrochemical Analysis of Complex Samples

Herein, we present an electrochemical sensing platform based on nanochannel-confined graphene quantum dots (GQDs) that is able to detect a spectrum of small analytes in complex samples with high sensitivity. Vertically ordered mesoporous silica-nanochannel film (VMSF) is decorated on the supporting electrode, conferring the electrode with excellent antifouling and anti-interference properties through steric exclusion and electrostatic repulsion. The synthesized GQDs with different functionalities are confined in the nanochannels of VMSF through electrophoresis, serving as the recognition element and signal amplifier. Without the usual need of tedious pretreatment, ultrasensitive and fast detection of Hg²⁺, Cu²⁺, and Cd²⁺ (with limits of detection (LOD) of 9.8 pM, 8.3 pM, and 4.3 nM, respectively) and dopamine (LOD of 120 nM) in complex food (Hg²⁺-contaminated seafood), environmental (soil-leaching solution), and biological (serum) samples are realized as proof-of-concept demonstrations.

Graphene-Based Light Sensing: Fabrication, Characterisation, Physical Properties and Performance

Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl 3 is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of devices with high gain and responsivity. In this work, we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse, the performance and possible future paths of investigation.

Influence of Multistep Surface Passivation on the Performance of PbS Colloidal Quantum Dot Solar Cells

The performance of devices containing colloidal quantum dot (CQD) films is strongly dependent on the surface chemistry of the CQDs they contain. Multistep surface treatments, which combine two or more strategies, are important for creating films with high carrier mobility that are well passivated against trap states and oxidation. Here, we examine the effect of a number of these surface treatments on PbS CQD films, including cation exchange to form PbS/CdS core/shell CQDs, and solid-state ligand-exchange treatments with Cl, Br, I, and 1,2-ethanedithiol (EDT) ligands. Using laboratory-based and synchrotron-radiation-excited X-ray photoelectron spectroscopy (XPS), we examine the compositions of the surface layer before and after treatment, and correlate this with the performance data and stability in air. We find that halide ion treatments may etch the CQD surfaces, with detrimental effects on the air stability and solar cell device performance caused by a reduction in the proportion of passivated surface sites. We show that films made up of PbS/CdS CQDs are particularly prone to this, suggesting Cd is more easily etched from the surface than Pb. However, by choosing a less aggressive ligand treatment, a good coverage of passivators on the surface can be achieved. We show that halide anions bind preferentially to surface Pb (rather than Cd). By isolating the part of XPS signal originating from the topmost surface layer of the CQD, we show that air stability is correlated with the total number of passivating agents (halide + EDT + Cd) at the surface.

Large-Area, Cost-Effective, Ultra-Broadband Perfect Absorber Utilizing Manganese in Metal-Insulator-Metal Structure

Achieving broadband absorption has been a topic of intensive research over the last decade. However, the costly and time consuming stage of lithography has always been a barrier for the large-area and mass production of absorbers. In this work, we designed, fabricated, and characterized a lithography-free, large-area compatible, omni-directional, ultra-broadband absorber that consists of the simplest geometrical configuration for absorbers: Metal-Insulator-Metal (MIM). We introduced and utilized Manganese (Mn) for the first time as a very promising metal for broadband absorption applications. We optimized the structure step-by-step and compared Mn against the other best candidates introduced so far in broadband absorption structures and showed the better performance of Mn compared to them. It also has the advantage of being cheaper compared to metals like gold that has been utilized in many patterned broadband absorbers. We also presented the circuit model of the structure. We experimentally achieved over 94 percent average absorption in the range of 400-900 nm (visible and above) and we obtained absorption as high as 99.6 percent at the wavelength of 626.4 nm. We also experimentally demonstrated that this structure retains broadband absorption for large angles up to 70 degrees.

Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe2/Perovskite Heterojunctions

We report on the large-scale synthesis of polycrystalline multilayer PtSe₂ film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe₂ and Cs-doped FAPbI₃, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large I_light/ I_dark ratio of 5.7 × 10³, high responsivity of 117.7 mA W^-1, and decent specific detectivity of 2.91 × 10¹² Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe₂/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe₂/perovskite heterojunction for future air-stable ultrafast photodetecting applications.