Hysteresis-Free Carbon Nanotube Field-Effect Transistors

All-Carbon Thin-Film Transistors Using Water-Only Printing

Printing thin-film transistors (TFTs) using nanomaterials is a promising approach for future electronics. Yet, most inks rely on environmentally harmful solvents for solubilizing and postprint processing the nanomaterials. In this work, we demonstrate water-only TFTs printed from all-carbon inks of semiconducting carbon nanotubes (CNTs), conducting graphene, and insulating crystalline nanocellulose (CNC). While suspending these nanomaterials into aqueous inks is readily achieved, printing the inks into thin films of sufficient surface coverage and in multilayer stacks to form TFTs has proven elusive without high temperatures, hazardous chemicals, and/or lengthy postprocessing. Using aerosol jet printing, our approach involves a maximum temperature of 70 °C and no hazardous chemicals─all inks are aqueous and only water is used for processing. An intermittent rinsing technique was utilized to address the surface adhesion challenges that limit film density of printed aqueous CNTs. These findings provide promising steps toward an environmentally friendly realization of thin-film electronics.

Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100 kΩ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100 mK.

Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.

Elastomeric Nanodielectrics for Soft and Hysteresis-Free Electronics

Elastomeric dielectrics are crucial for reliably governing the carrier densities in semiconducting channels during deformation in soft/stretchable field-effect transistors (FETs). Uncontrolled stacking of polymeric chains renders elastomeric dielectrics poorly insulated at nanoscale thicknesses, thereby thick films are usually required, leading to high voltage or power consumption for on/off operations of FETs. Here, layer-by-layer assembly is exploited to build 15-nm-thick elastomeric nanodielectrics through alternative adsorption of oppositely charged polyurethanes (PUs) for soft and hysteresis-free FETs. After mild thermal annealing to heal pinholes, such PU multilayers offer high areal capacitances of 237 nF cm^-2 and low leakage current densities of 3.2 × 10^-8 A cm^-2 at 2 V. Owing to the intrinsic ductility of the elastomeric PUs, the nanofilms possess excellent dielectric properties at a strain of 5% or a bending radius of 1.5 mm, while the wrinkled counterparts show mechanical stability with negligible changes of leakage currents after repeated stretching to a strain of 50%. Besides, these nanodielectrics are immune to high humidity and conserve their properties when immersed into water, despite their assembly occurs aqueously. Furthermore, the PU dielectrics are implemented in carbon nanotube FETs, demonstrating low-voltage operations (< 1.5 V) and negligible hysteresis without any encapsulations.

Carbon Nanotube (CNT)-Based Biosensors

This review focuses on recent advances in the application of carbon nanotubes (CNTs) for the development of sensors and biosensors. The paper discusses various configurations of these devices, including their integration in analytical devices. Carbon nanotube-based sensors have been developed for a broad range of applications including electrochemical sensors for food safety, optical sensors for heavy metal detection, and field-effect devices for virus detection. However, as yet there are only a few examples of carbon nanotube-based sensors that have reached the marketplace. Challenges still hamper the real-world application of carbon nanotube-based sensors, primarily, the integration of carbon nanotube sensing elements into analytical devices and fabrication on an industrial scale.

Ultralow-power flexible transparent carbon nanotube synaptic transistors for emotional memory

Emulating the biological behavior of the human brain with artificial neuromorphic devices is essential for the future development of human-machine interactive systems, bionic sensing systems and intelligent robotic systems. In this paper, artificial flexible transparent carbon nanotube synaptic transistors (F-CNT-STs) with signal transmission and emotional learning functions are realized by adopting the poly(vinyl alcohol) (PVA)/SiO2 proton-conducting electrolyte. Synaptic functions of biological synapses including excitatory and inhibitory behaviors are successfully emulated in the F-CNT-STs. Besides, synaptic plasticity such as spike-duration-dependent plasticity, spike-number-dependent plasticity, spike-amplitude-dependent plasticity, paired-pulse facilitation, short-term plasticity, and long-term plasticity have all been systematically characterized. Moreover, the F-CNT-STs also closely imitate the behavior of human brain learning and emotional memory functions. After 1000 bending cycles at a radius of 3 mm, both the transistor characteristics and the synaptic functions can still be implemented correctly, showing outstanding mechanical capability. The realized F-CNT-STs possess low operating voltage, quick response, and ultra-low power consumption, indicating their high potential to work in low-power biological systems and artificial intelligence systems. The flexible artificial synaptic transistor enables its potential to be generally applicable to various flexible wearable biological and intelligent applications.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

Mixed-Dimensional Vertical Point p-n Junctions

Mixed-dimensional van der Waals (vdW) heterostructures composed of one-dimensional (1D) and two-dimensional (2D) materials have exhibited great potential in nanoelectronics and nano-optoelectronics. In this study, we present a vertical point p-n junction (VPpnJ), in which a vertical stacked molybdenum disulfide/tungsten diselenide p-n junction is sandwiched between two cross-stacked metallic carbon nanotubes (CNTs). The device can be transformed from p-n junction to n-n junction via gate modulation. As a photodetector, the VPpnJ device can work in three different modes by setting the appropriate gating voltages. The photosensitive areas are localized around the top CNT, bottom CNT, and the cross point at V_G = -10 V, 10 V, and ∼0 V, respectively. In the p-n regime at the negative gate voltage, the VPpnJ device showed an obvious photovoltaic effect. The external quantum efficiency of the VPpnJ can reach 42.7%. The electrical control of the electronic and optoelectronic characteristics can be mainly attributed to the gate-tunable interfacial built-in electric fields in the heterostructures. The progress also reveals the functional diversity of such 1D/2D mixed-dimensional heterostructures, which will be prospects for future nanoelectronics and nano-optoelectronics.

Nanosystems, Edge Computing, and the Next Generation Computing Systems

It is widely recognized that nanoscience and nanotechnology and their subfields, such as nanophotonics, nanoelectronics, and nanomechanics, have had a tremendous impact on recent advances in sensing, imaging, and communication, with notable developments, including novel transistors and processor architectures. For example, in addition to being supremely fast, optical and photonic components and devices are capable of operating across multiple orders of magnitude length, power, and spectral scales, encompassing the range from macroscopic device sizes and kW energies to atomic domains and single-photon energies. The extreme versatility of the associated electromagnetic phenomena and applications, both classical and quantum, are therefore highly appealing to the rapidly evolving computing and communication realms, where innovations in both hardware and software are necessary to meet the growing speed and memory requirements. Development of all-optical components, photonic chips, interconnects, and processors will bring the speed of light, photon coherence properties, field confinement and enhancement, information-carrying capacity, and the broad spectrum of light into the high-performance computing, the internet of things, and industries related to cloud, fog, and recently edge computing. Conversely, owing to their extraordinary properties, 0D, 1D, and 2D materials are being explored as a physical basis for the next generation of logic components and processors. Carbon nanotubes, for example, have been recently used to create a new processor beyond proof of principle. These developments, in conjunction with neuromorphic and quantum computing, are envisioned to maintain the growth of computing power beyond the projected plateau for silicon technology. We survey the qualitative figures of merit of technologies of current interest for the next generation computing with an emphasis on edge computing.

Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length

Carbon nanotube field-effect transistors (CNFETs) promise to improve the energy efficiency, speed, and transistor density of very large scale integration circuits owing to the intrinsic thin channel body and excellent charge transport properties of carbon nanotubes. Low-temperature fabrication (e.g., <400 °C) is a key enabler for the monolithic three-dimensional (3D) integration of CNFET digital logic into a device technology platform that overcomes memory bandwidth bottlenecks for data-abundant applications such as big-data analytics and machine learning. However, high contact resistance for short CNFET contacts has been a major roadblock to establishing CNFETs as a viable technology because the contact resistance, in series with the channel resistance, reduces the on-state current of CNFETs. Additionally, the variation in contact resistance remains unstudied for short contacts and will further degrade the energy efficiency and speed of CNFET circuits. In this work, we investigate by experiments the contact resistance and statistical variation of room-temperature fabricated CNFET contacts down to 10 nm contact lengths. These CNFET contacts are ∼15 nm shorter than the state-of-the-art Si CMOS "7 nm node" contact length, allowing for multiple generations of future scaling of the transistor-contacted gate pitch. For the 10 nm contacts, we report contact resistance values down to 6.5 kΩ per source/drain contact for a single carbon nanotube (CNT) with a median contact resistance of 18.2 kΩ. The 10 nm contacts reduce the CNFET current by as little as 13% at V_DS = 0.7 V compared with the best reported 200 nm contacts to date, corroborated by results in this work. Our analysis of R_C from 232 single-CNT CNFETs between the long-contact (e.g., 200 nm) and short-contact (e.g., 10 nm) regimes quantifies the resistance variation and projects the impact on CNFET current variability versus the number of CNT in the transistor. The resistance distribution reveals contact-length-dependent R_C variations become significant below 20 nm contact length. However, a larger source of CNFET resistance variation is apparent at all contact lengths used in this work. To further investigate the origins of this contact-length-independent resistance variation, we analyze the variation of R_C in arrays of identical CNFETs along a single CNT of constant diameter and observe the random occurrence of high  R_C, even on correlated CNFETs.

Surfactant-driven Amphoteric Doping of Carbon Nanotubes

Aqueous surfactant dispersion is the most typical starting step to functionalize materials consisting of carbon nanotubes, but the effects of surfactants on the electronic properties are still unclear. Here we report how the functional groups of surfactants affect the electronic properties of carbon nanotube films. Using spectroscopic and thermoelectric characterization, we demonstrate that anionic and non-ionic surfactants contribute to the formation of p-type and n-type carbon nanotubes, respectively. Additionally, p-type doping with oxygen adsorption is found to compete with surfactants' doping. These findings are useful for designing the srarting carbon nanotube materials exhibiting desirable electronic properties.

Performance enhancement of carbon nanotube thin film transistor by yttrium oxide capping

Carbon nanotube thin film transistors (CNT-TFTs) are regarded as promising technology for active matrix pixel driving circuits of future flat panel displays (FPD). For FPD application, unipolar thin film transistors (TFTs) with high mobility (μ), high on-state current (I_ON), low off-current (I_OFF) at high source/drain bias and small hysteresis are required simultaneously. Though excellent values of those performance metrics have been realized individually in different reports, the overall performance of previously reported CNT-TFTs has not met the above requirements. In this paper, we found that yttrium oxide (Y₂O₃) capping is helpful in improving both I_ON and μ of CNT-TFTs. Combining Y₂O₃ capping and Al₂O₃ passivation, unipolar CNT-TFTs with high I_ON/I_OFF (>10⁷) and low I_OFF (∼pA) at -10.1 V source/drain bias, and relatively small hysteresis in the range of -30 V to +30 V gate voltage were achieved, which are capable of active matrix display driving.