Direct Patterning of Zinc Sulfide on a Sub-10 Nanometer Scale via Electron Beam Lithography

Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da)

Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving one or two of these parameters typically leads to a loss in the third. As the patterned feature sizes approach angstrom scale, the trade-off between these three metrics becomes increasingly hard to resolve and calls for a fundamental rethinking of the resist chemistry. Low-molecular-mass monodispersed metal-containing resists of high atom economy can provide not only very high resolution but also very low line-width roughness without sacrificing sensitivity. Here we describe a modular metal-containing resist platform (molecular mass <500 Da) where a molecular resist consists of just two components: a metal and a radical initiator bonded to it. This simple system not only is amenable to high-resolution electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL) but also unites them mechanistically, giving a consolidated perspective of molecular and chemical processes happening during exposure. Irradiation of the resist leads to the production of secondary electrons that generate radicals in the initiator bonded to metal. This brings about an intramolecular rearrangement and causes solubility switch in the exposed resist. We demonstrate record 1.9-2.0 nm isolated patterns and 7 nm half-pitch dense line-space features over a large area using EBL. With EUVL, 12 nm half-pitch line-space features are shown at a dose of 68 mJ/cm2. In both of these patterning techniques, the line-width roughness was found to be ≤2 nm, a record low value for any resist platform, also leading to a low-performance trade-off metric, Z factor, of 0.6 × 10-8 mJ·nm3. With the ultimate resolution limited by instrumental factors, potential patterning at the level of a unit cell can be envisaged, making low-molecular-mass resists best poised for angstrom-scale lithography.

Additive-Assisted Forming High-Quality Thin Films of Sn-Oxo Cluster for Nanopatterning

Recently, metal-oxo clusters (MOCs) have attracted significant interest in fabricating nanoscale patterns in semiconductors via lithography. However, many MOCs are highly crystalline, making it difficult for them to form films and hindering subsequent nanopatterning processes. In this study, we developed a novel and simple method to enhance the film-forming ability of aromatic tetranuclear Sn-oxo clusters by adding additives. Theoretical calculations and Fourier-transform infrared (FTIR) analysis revealed the formation of intermolecular hydrogen bonds between the Sn-oxo clusters and additives, which induced a crystal-gel phase transition at -20 °C, thereby inhibiting the easy crystallization of the Sn-oxo clusters. High-quality and uniform thin films with surface roughness below 0.3 nm were prepared via spin coating. The obtained thin films exhibited good lithographic performance under deep ultraviolet (DUV), electron beam, and extreme-ultraviolet irradiation without a photo acid generator/photoinitiator, and 13- and 21 nm-wide line patterns were obtained on the films via electron-beam and extreme-ultraviolet lithographies. This study will pave the way for the further investigation of novel MOCs for advanced lithography and other thin-film applications.

Advanced lithography materials: From fundamentals to applications

The semiconductor industry has long been driven by advances in a nanofabrication technology known as lithography, and the fabrication of nanostructures on chips relies on an important coating, the photoresist layer. Photoresists are typically spin-coated to form a film and have a photolysis solubility transition and etch resistance that allow for rapid fabrication of nanostructures. As a result, photoresists have attracted great interest in both fundamental research and industrial applications. Currently, the semiconductor industry has entered the era of extreme ultraviolet lithography (EUVL) and expects photoresists to be able to fabricate sub-10 nm structures. In order to realize sub-10 nm nanofabrication, the development of photoresists faces several challenges in terms of sensitivity, etch resistance, and molecular size. In this paper, three types of lithographic mechanisms are reviewed to provide strategies for designing photoresists that can enable high-resolution nanofabrication. The discussion of the current state of the art in optical lithography is presented in depth. Practical applications of photoresists and related recent advances are summarized. Finally, the current achievements and remaining issues of photoresists are discussed and future research directions are envisioned.

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic-organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography-prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology-can assist with revolutionizing lithography techniques.

Broadband Antireflective Hybrid Micro/Nanostructure on Zinc Sulfide Fabricated by Optimal Bessel Femtosecond Laser

Enhancing the infrared window transmittance of zinc sulfide (ZnS) is important to improve the performance of infrared detector systems. In this work, a new hybrid micro/nanostructure was fabricated by an optimal Bessel femtosecond laser on ZnS substrate. The surface morphologies and profiles of ASS ablated by a 20× microscope objective Bessel beam are described, indicating that the nanoripples on the micropore were formed by the SPP interference and the SPP scattering in a particular direction. Further, the maximum average transmittance of ASS increased by 9.7% and 12.3% in the wavelength ranges of 5~12 μm and 8~12 μm, respectively. Finally, the antireflective mechanism of the hybrid micro/nanostructure is explored using the novel electromagnetic field model based on the FDTD method, and we attribute the stable antireflective performance of ASS in broadband to the interface effective dielectric effect and LLFE.

Patterning at the Resolution Limit of Commercial Electron Beam Lithography

It has been long known that low molecular weight resists can achieve a very high resolution, theoretically close to the probe diameter of the electron beam lithography (EBL) system. Despite technological improvements in EBL systems, the advances in resists have lagged behind. Here we demonstrate that a low-molecular-mass single-source precursor resist (based on cadmium(II) ethylxanthate complexed with pyridine) is capable of a achieving resolution (4 nm) that closely matches the measured probe diameter (∼3.8 nm). Energetic electrons enable the top-down radiolysis of the resist, while they provide the energy to construct the functional material from the bottom-up─unit cell by unit cell. Since this occurs only within the volume of resist exposed to primary electrons, the minimum size of the patterned features is close to the beam diameter. We speculate that angstrom-scale patterning of functional materials is possible with single-source precursor resists using an aberration-corrected electron beam writer with a spot size of ∼1 Å.

Fabrication of Au Nanoparticle Arrays on Flexible Substrate for Tunable Localized Surface Plasmon Resonance

In this work, Au nanoparticle (AuNP) arrays on shape memory polyurethane (SMPU) substrates serve as flexible materials for tunable localized surface plasmon resonance (LSPR). AuNP arrays prepared by diblock copolymer self-assembly are transferred from rigid silicon wafers onto flexible SMPU substrates with ultrasonic treatment rather than peeling off directly. The resultant AuNP array SMPU films have excellent mechanical properties and stable thermodynamic properties. The LSPR arising from AuNP arrays is increased by negative bending on SMPU substrates, whereas the LSPR is decreased by positive bending. Besides, upon uniaxial tension, the vertical LSPR is increased first then decreased, whereas the parallel LSPR is similar, resulting in the overall LSPR of AuNP arrays being increased first and then decreased with the mechanical uniaxial tension of SMPU. Moreover, the resultant AuNP array SMPU films exhibit excellent flexibility, stability, and homogeneity in practical surface-enhanced Raman scattering (SERS) application. This approach of incorporating AuNP arrays on SMPU substrates for tuning plasmonic properties have great potential applications in SERS, fluorescence enhancement, and newly optoelectronic materials.

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi₂S₃) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi₂S₃, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m^-1 and a Seebeck coefficient of -21.41 μV K^-1 for a directly patterned, substoichiometric Bi₂S₃ thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.

Room-Temperature Patterning of Nanoscale MoS2 under an Electron Beam

Molybdenum disulfide (MoS₂) is traditionally grown at a high temperature and subsequently patterned to study its electronic properties or make devices. This method imposes severe limitations on the shape and size of MoS₂ crystals that can be patterned precisely at required positions. Here, we describe a method of direct nanoscale patterning of MoS₂ at room temperature by exposing a molybdenum thiocubane single-source precursor to a beam of electrons. Molybdenum thiocubanes with various alkylxanthate moieties [Mo₄S₄(ROCS₂)₆, where R = alkyl] were prepared using a "self-assembly" approach. Micro-Raman and micro-FTIR spectroscopic studies suggest that exposure to a relatively smaller dose of electrons results in the breakdown of xanthate moieties, leading to the formation of MoS₂. High-resolution transmission electron micrographs suggest that the growth of MoS₂ most likely happens along (100) planes. An electron-beam-induced chemical transformation of a molybdenum thiocubane resist was exploited to fabricate sub-10 nm MoS₂ lines and dense dots as small as 13 nm with a pitch of 33 nm. Since this technique does not require the liftoff and etching steps, patterning of MoS₂ with interesting shapes, sizes, and thicknesses potentially leading to tunable band gap is possible.

Nanopattern-Embedded Micropillar Structures for Security Identification

A novel method was developed for fabricating nanopatterns embedded on micropillar-structured surfaces using nanowelding technology for security identification. Commonly used substrates, that is, polyethylene films, glass wafers, Si wafers, and curved surfaces, were employed and their characteristics were evaluated. Cr was deposited onto the selected substrate to strengthen the adhesion force, and an adhesive layer of ultra-thin metal was deposited on top of the Cr layer. Lastly, nanopatterns were embedded on the substrates by nanowelding. The morphologies, cross sections, and three-dimensional (3D) images of the fabricated nanostructures were evaluated, and their crystalline structures and compositions were analyzed. Using the same method, nanopatterns embedded on micropillar-structured surfaces were fabricated for the first time as security patterns to improve security identification. The fabricated security patterns were characterized in three stages. First, micropillar structures and structural color were simply observed via optical microscopy to achieve a preliminary judgment. The appearance of structural color was due to the nanostructures fabricated on the micropillar surface. Next, the designed nanopatterns on the micropillar-structured surfaces were observed by scanning electron microscopy. Lastly, the changes in the spectral peaks were precisely observed using a spectrometer to achieve an enhanced security pattern. The fabricated security patterns can be suitable for valuable products, such as branded wines, watches, and bags. In addition, the proposed method offers a simple approach for transferring metal nanopatterns to common substrates. Moreover, the fabricated security patterns can have potential applications in semiconductor electrodes, transparent electrodes, and security identification codes.

Recent advances in metal sulfides: from controlled fabrication to electrocatalytic, photocatalytic and photoelectrochemical water splitting and beyond

This review describes an in-depth overview and knowledge on the variety of synthetic strategies for forming metal sulfides and their potential use to achieve effective hydrogen generation and beyond.

Midinfrared Plasmonic Valleytronics in Metagate-Tuned Graphene

A valley plasmonic crystal for graphene surface plasmons is proposed. We demonstrate that a designer metagate, placed within a few nanometers of graphene, can be used to impose a periodic Fermi energy landscape on graphene. For specific metagate geometries and bias voltages, the combined metagate-graphene structure is shown to produce complete propagation band gaps for the plasmons, and to impart them with nontrivial valley-linked topological properties. Sharply curved domain walls between differently patterned metagates are shown to guide highly localized plasmons without any reflections owing to suppressed intervalley scattering. Our approach paves the way for nonmagnetic and dynamically reconfigurable topological nanophotonic devices.