Recovery of spatial frequencies in coherent diffraction imaging in the presence of a central obscuration

Coherent diffraction imaging (CDI) and its scanning version, ptychography, are lensless imaging approaches used to iteratively retrieve a sample's complex scattering amplitude from its measured diffraction patterns. These imaging methods are most useful in extreme ultraviolet (EUV) and X-ray regions of the electromagnetic spectrum, where efficient imaging optics are difficult to manufacture. CDI relies on high signal-to-noise ratio diffraction data to recover the phase, but increasing the flux can cause saturation effects on the detector. A conventional solution to this problem is to place a beam stop in front of the detector. The pixel masking method is a common solution to the problem of missing frequencies due to a beam stop. This paper describes the information redundancy in the recorded data set and expands on how the reconstruction algorithm can exploit this redundancy to estimate the missing frequencies. Thereafter, we modify the size of the beam stop in experimental and simulation data to assess the impact of the missing frequencies, investigate the extent to which the lost portion of the diffraction spectrum can be recovered, and quantify the effect of the beam stop on the image quality. The experimental findings and simulations conducted for EUV imaging demonstrate that when using a beam stop, the numerical aperture of the condenser is a crucial factor in the recovery of lost frequencies. Our thorough investigation of the reconstructed images provides information on the overall quality of reconstruction and highlights the vulnerable frequencies if the beam stop size is larger than the extent of the illumination NA. The outcome of this study can be applied to other sources of frequency loss, and it will contribute to the improvement of experiments and reconstruction algorithms in CDI.

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has enabled the development of single-atom, quantum-electronic devices on a laboratory scale. Scaling up this technology to mass-produce these devices requires bridging the gap between the precision of STM and the processes used in next-generation semiconductor manufacturing. Here, we demonstrate the ability to remove hydrogen from a monohydride Si(001):H surface using extreme ultraviolet (EUV) light. We quantify the desorption characteristics using various techniques, including STM, X-ray photoelectron spectroscopy (XPS), and photoemission electron microscopy (XPEEM). Our results show that desorption is induced by secondary electrons from valence band excitations, consistent with an exactly solvable non-linear differential equation and compatible with the current 13.5 nm (~92 eV) EUV standard for photolithography; the data imply useful exposure times of order minutes for the 300 W sources characteristic of EUV infrastructure. This is an important step towards the EUV patterning of silicon surfaces without traditional resists, by offering the possibility for parallel processing in the fabrication of classical and quantum devices through deterministic doping.

The effect of different taping techniques on transtibial amputation walking parameters: A case report

Buerger disease is a nonatherosclerotic, segmental inflammatory disease of the occlusive tract, often involving medium-sized muscular and small-diameter arteries and veins of the extremities. If medical treatment is not successful, amputation is inevitable. The aim of this study was to investigate the effect of different kinesiological taping techniques on walking parameters of transtibial amputee with knee extension limitation. Two different kinesiological taping methods (Kinesio Tape and Dynamic Tape) were applied to the transtibial patient with knee extension limitation. Walking performance of patients was assessed with The Biodex Gait Trainer 2. Gait parameters without tape were as follows: average walking speed 0.38 m/s, average step cycle 0.48 cyl/s, average left step length 50 cm, average right step length 43 cm, coefficient of variation 9% at the left, and coefficient of variation 9% at the right. After applying Kinesio Tape and Dynamic Tape, these values were measured as follows: average walking speed 0.50.56 m/s, average step cycle 0.51.56 cyl/s, average left step length 61-60 cm, average right step length 53-54 cm, coefficient of variation 6%-5% at the left, and coefficient of variation 6%-4% at the right side. Dynamic Tape and Kinesio Tape both had positive effects on active joint motion and walking parameters. Regarding walking speed and step length, Dynamic Tape was found to be more effective than Kinesio Tape. Taping methods applied to amputees have positive effects on range of motion, which in return causes improvements on walking parameters.

Rare complication spontaneous pneumothorax and pneumomediastinum in COVID-19 patients: A single center experience

INTRODUCTION

We aimed to describe the clinical characteristics and outcomes of patients with spontaneous pneumothorax (SPT) and pneumomediastinum (SPM) due to COVID-19 pneumonia.

METHODOLOGY

This retrospective study evaluated inpatients at a COVID-19 pandemic hospital. Between March 11, 2020 and March 31, 2021, patients who developed complications of spontaneous pneumothorax (SPT) and pneumomediastinum (SPM) with a confirmed diagnosis of SARS-CoV-2 by polymerase chain reaction (PCR) method were included.

RESULTS

Of the 6,528 hospitalized patients, nine developed complications of SPT and SPM, with an incidence of 0.14%. Four of these patients developed SPT, one developed SPM, one developed SPT + SPM + emphysema, and three developed SPT + SPM. The mean age of the patients was 67.67 ± 13.41 years and the median was 68 (45-88) years. All patients were male. Six patients died, one of whom died of myocardial infarction from uncomplicated causes.

CONCLUSIONS

Studies with more cases are needed to evaluate the causality between COVID-19 and pneumothorax (PT) and pneumomediastinum (PM). However, it should be kept in mind that PT and PM may lead to this clinic when sudden respiratory distress occurs in these patients and rapid diagnosis and treatment should be planned. As observed in this study, PT and PM are important factors in the development of mortality in COVID-19 patients.

Charge Shielding-Oriented Design of Zinc-Based Nanoparticle Liquids for Controlled Nanofabrication

Metal-containing nanoparticles possess nanoscale sizes, but the exploitation of their nanofeatures in nanofabrication processes remains challenging. Herein, we report the realization of a class of zinc-based nanoparticle liquids and their potential for applications in controlled nanofabrication. Utilizing the metal-core charge shielding strategy, we prepared nanoparticles that display glass-to-liquid transition behavior with glass transition temperature far below room temperature (down to -50.9 °C). Theoretical calculations suggest the outer surface of these unusual nanoparticles is almost neutral, thus leading to interparticle interactions weak enough to give them liquefaction characteristics. Such features endow them with extraordinarily high dispersibility and excellent film-forming capabilities. Twenty-two types of nanoparticles synthesized by this strategy have all shown good lithographic properties in the mid-ultraviolet, electron beam, or extreme ultraviolet light, and these nanoparticle liquids have achieved controlled top-down nanofabrication with predesigned 18 or 16 nm patterns. This proposed strategy is synthetically scalable and structurally extensible and is expected to inspire the design of entirely new forms of nanomaterials.

Investigation of the correlation between knee joint position sense and physical functional performance in individuals with transtibial amputation

INTRODUCTION

In individuals with transtibial amputation, the distal part of the lower extremity is lost. Therefore, the knee joint is of greater importance to be able to provide physical performance. The aim of this study was to evaluate the correlation between knee joint position sense and physical functional performance in individuals with transtibial amputation.

METHODS

The study included 21 subjects with transtibial amputation. A digital inclinometer was used to evaluate the joint position sense of the amputated side knee joint. The timed up and go test, the 4-square step test, and 10-m walk test were used to evaluate physical functional performance. Linear regression analysis was used to investigate the associations between independent variables and functional performance tests.

RESULTS

The mean age of the participants was 52.52 ± 15.68 years. The mean of the error in knee joint position sense was 5.33 degree (standard deviation = 3.08 degree). The error in knee joint position sense of the amputated limb predicted 45% of the variance in the 4-square step test and 22% of the variance in the 10-m walk test ( P < 0.05).

CONCLUSIONS

The knee joint position sense on the amputated side was found to be associated with physical functional performance in individuals with transtibial amputation. Residual limb knee joint position sense should be considered when prescribing prostheses and planning rehabilitation programs.

Theoretical Insights into the Solubility Polarity Switch of Metal-Organic Nanoclusters for Nanoscale Patterning

Metal-organic nanoclusters(MOCs) are being increasingly used as prospective photoresist candidates for advanced nanoscale lithography technologies. However, insight into the irradiation-induced solubility switching process remains unclear. Hereby, the theoretical study employing density functional theory (DFT) calculations of the alkene-containing zirconium oxide MOC photoresists is reported, which is rationally synthesized accordingly, to disclose the mechanism of the nanoscale patterning driven by the switch of solubility from the acid-catalyzed or electron-triggered ligand dissociation. By evaluating the dependence of MOCs' imaging process on photoacid, lithographies of photoresists with and without photoacid generators after exposure to ultraviolet (UV), electron beam, and soft X-ray, it is revealed that photoacid is essential in UV lithography, but it demonstrates little effect on exposure dose in high-energy lithography. Furthermore, theoretical studies using DFT simulations to investigate the plausible photoacid-catalyzed, electron-triggered dissociation, and accompanying radical reaction are performed, and a mechanism is demonstrated that the nanoscale patterning of this type of MOCs is driven by the solubility switch resulting from dissociation-induced strong electrostatic interaction and low-energy barrier radical polymerization with other species. This study can give insights into the chemical mechanisms of patterning, and guide the rational design of photoresists to realize high resolution and high sensitivity.

Resistless EUV lithography: Photon-induced oxide patterning on silicon

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the hydrogen desorption in scanning tunneling microscopy-based lithography. We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nanometer-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene (PSTS) were prepared by a facile method of modification of polystyrene with sulfonium groups. The uploading of the sulfonium group can be well-controlled by changing the feed ratio of raw materials, resulting in PSTS_0.5 and PSTS_0.7 resists with sulfonium ratios of 50 and 70%, respectively. The optimum developer (methyl isobutyl ketone/ethanol = 1:7) is obtained by analyzing contrast curves of electron beam lithography (EBL). PSTS_0.7 exhibits a better resolution (18 nm half-pitch (HP)) than the PSTS_0.5 resist (20 nm HP) at the same developing conditions for EBL. This novel resist platform was further evaluated by extreme ultraviolet lithography, and patterning performance down to 13 nm HP at a dose of 186 mJ cm^-2 with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.

The Extent of Platinum-Induced Hydrogen Spillover on Cerium Dioxide

Hydrogen spillover from metal nanoparticles to oxides is an essential process in hydrogenation catalysis and other applications such as hydrogen storage. It is important to understand how far this process is reaching over the surface of the oxide. Here, we present a combination of advanced sample fabrication of a model system and in situ X-ray photoelectron spectroscopy to disentangle local and far-reaching effects of hydrogen spillover in a platinum-ceria catalyst. At low temperatures (25-100 °C and 1 mbar H2) surface O-H formed by hydrogen spillover on the whole ceria surface extending microns away from the platinum, leading to a reduction of Ce4+ to Ce3+. This process and structures were strongly temperature dependent. At temperatures above 150 °C (at 1 mbar H2), O-H partially disappeared from the surface due to its decreasing thermodynamic stability. This resulted in a ceria reoxidation. Higher hydrogen pressures are likely to shift these transition temperatures upward due to the increasing chemical potential. The findings reveal that on a catalyst containing a structure capable to promote spillover, hydrogen can affect the whole catalyst surface and be involved in catalysis and restructuring.

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

A series of t-butyloxycarbonyl (t-Boc) protected tetraphenylsilane derivatives (TPSi-Boc _x , x = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of t-Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Boc _x were examined to assess the suitability for application as candidates for positive-tone molecular glass resist materials. The effects of t-Boc protecting ratio had been studied in detail by electron beam lithography. The results suggest that the TPSi-Boc _x resist with different t-Boc protecting ratios exhibit a significant change in contrast, pattern blur, and the density of bridge defect. The TPSi-Boc_70% resist achieves the most excellent patterning capability. The extreme ultraviolet (EUV) lithography performance on TPSi-Boc_70% was evaluated by using the soft X-ray interference lithography. The results demonstrate that the TPSi-Boc_70% resist can achieve excellent patterning capability down to 20 nm isolated lines at 8.7 mJ/cm² and 25 nm dense lines at 14.5 mJ/cm². This study will help us to understand the relationship between the t-Boc protecting ratio and the patterning ability and supply useful guidelines for designing molecular resists.

Charge Configuration Memory Devices: Energy Efficiency and Switching Speed

Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS2. Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τW as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when τW approaches the ∼0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.

Fluorine-Rich Zinc Oxoclusters as Extreme Ultraviolet Photoresists: Chemical Reactions and Lithography Performance

The absorption of extreme ultraviolet (EUV) radiation by a photoresist strongly depends on its atomic composition. Consequently, elements with a high EUV absorption cross section can assist in meeting the demand for higher photon absorbance by the photoresist to improve the sensitivity and reduce the photon shot noise induced roughness. In this work, we enhanced the EUV absorption of the methacrylic acid ligands of Zn oxoclusters by introducing fluorine atoms. We evaluated the lithography performance of this fluorine-rich material as a negative tone EUV photoresist along with extensive spectroscopic and microscopic studies, providing deep insights into the underlying mechanism. UV-vis spectroscopy studies demonstrate that the presence of fluorine in the oxocluster enhances its stability in the thin films to the ambient atmosphere. However, the EUV photoresist sensitivity (D ₅₀) of the fluorine-rich oxocluster is decreased compared to its previously studied methacrylic acid analogue. Scanning transmission X-ray microscopy and in situ X-ray photoelectron spectroscopy in combination with FTIR and UV-vis spectroscopy were used to gain insights into the chemical changes in the material responsible for the solubility switch. The results support decarboxylation of the ligands and subsequent radical-induced polymerization reactions in the thin film upon EUV irradiation. The rupture of carbon-fluorine bonds via dissociative electron attachment offers a parallel way of generating radicals. The mechanistic insights obtained here will be applicable to other hybrid materials and potentially pave the way for the development of EUV materials with better performance.

Content comparison of four commonly used amputee mobility assessment scales in the literature by linking to the International Classification of Functioning, Disability, and Health

BACKGROUND

Despite the fact that there are a number of studies revealing the linkage of scales with the World Health Organization's international classification of functioning, disability, and health (ICF), there is a need for comprehensive studies examining the relationship between amputee mobility scales and ICF.

OBJECTIVE

To analyze the content of four amputee mobility scales at the item level using the ICF.

METHODS

The Locomotor Capacity Index, Rivermead Mobility Index, Amputee Mobility Predictor, and Prosthetic Limb Users Survey of Mobility were analyzed by two health professionals for content comparison according to the ICF categories. Kappa statistic was used to calculate the degree of agreement between the two investigators.

RESULTS

A total of 62 items in the scales were analyzed and linked with ICF codes. The scale questions were linked with 27 different ICF codes as follows: 1 (3.7%) "body function", 23 (85.1%) "activity and participation", 2 (7.5%) "environmental factors," and 1 (3.7%) "not definable. The estimated kappa values ranged from 0.83 to 0.90 for ICF codes.

CONCLUSION

As a result of the study, the ICF is a highly effective resource that can be used in the analysis of amputee mobility scales. Because the scale items are more concentrated on the mobility chapter, it was seen that the scales generally served their purposes. In the light of the findings obtained, it is thought that the diversity of the scales in the concept distribution will guide clinicians and researchers in choosing scales according to their target groups.

High-efficiency diffraction gratings for EUV and soft x-rays using spin-on-carbon underlayers

We report on the fabrication and characterization of high-resolution gratings with high efficiency in the extreme ultraviolet (EUV) and soft x-ray ranges using spin-on-carbon (SOC) underlayers. We demonstrate the fabrication of diffraction gratings down to 20 nm half-pitch (HP) on Si₃N₄membranes with a bilayer of hydrogen silsesquioxane (HSQ) and spin-on-carbon and show their performance as a grating mask for extreme ultraviolet interference lithography (EUV-IL). High-resolution patterning of HSQ is possible only for thin films due to pattern collapse. The combination of this high-resolution resist with SOC circumvents this problem and enables the fabrication of high aspect ratio nanostructures. Rigorous coupled-wave analysis shows that the bilayer gratings exhibit higher diffraction efficiency than what is feasible with a grating made of HSQ. We also demonstrate a simple and accurate method to experimentally measure the diffraction efficiency of high-resolution gratings by measuring the relative ratio of the dose-to-clear curves of the photoresist. The measured diffraction efficiencies are in good agreement with the theoretically predicted values. Furthermore, we verify our calculations and measurements by printing line/space patterns in chemically amplified resists down to 10 nm HP with both HSQ and bilayer grating masks using EUV-IL. The improved diffraction efficiency of the bilayers is expected to have applications not only in gratings for interference lithography, but also in Fresnel zone plates and gratings for spectroscopy in the EUV and soft x-ray ranges.

Fluorescent Labeling to Investigate Nanopatterning Processes in Extreme Ultraviolet Lithography

Extreme ultraviolet (EUV) lithography uses 13.5 nm light to reach the sub-20 nm resolution. However, the process of pattern formation induced by this high-energy light is not well-understood. In this work, we provide an inorganic EUV photoresist with fluorescence properties by introducing a carbazole derivative as a ligand, and we study its effect on the patterning process. Using the fluorescence properties, changes in the emission of the material after EUV exposure could be tracked by means of spectroscopy and microscopy. The resist sensitivity was substantially reduced by the incorporation of the carbazole benzoate ligands, which is attributed to hole trapping and steric hindrance. After EUV irradiation of the resist films, infrared, UV-visible absorption, and fluorescence spectroscopies showed that the carbazole units were still mostly intact, although their fluorescence intensity was lowered. Our work shows that fluorescent labeling can provide relevant mechanistic insights in the patterning process of resists, potentially with a molecular resolution.

Bottom-Up Nanofabrication with Extreme-Ultraviolet Light: Metal-Organic Frameworks on Patterned Monolayers

The fabrication of integrated circuits with ever smaller (sub-10 nm) features poses fundamental challenges in chemistry and materials science. As smaller nanostructures are fabricated, thinner layers of materials are required, and surfaces and interfaces gain a more important role in the formation of nanopatterns. We present a new bottom-up approach in which we use the high optical resolution offered by extreme ultraviolet (EUV) lithography to print patterns on self-assembled monolayers (SAMs). Upon radiation, low-energy electrons induce chemical changes in the SAM so that the projected image is transferred to the substrate surface. We use the chemical differences between exposed and unexposed regions to promote a selective growth of hybrid structures that can act as an etch-resistant layer for further pattern transfer or can be used as functional nanostructures. The EUV doses required to promote selective growth on exposed areas are close to industrial requirements. Furthermore, this method allows for the independent tuning of different steps in the EUV lithography process (photo-induced chemistry, spatially resolved chemical contrast, and formation of nanopatterns), an advantage over current resists, in which the same material plays all roles.

Surface-modified elastomeric nanofluidic devices for single nanoparticle trapping

Our work focuses on the development of simpler and effective production of nanofluidic devices for high-throughput charged single nanoparticle trapping in an aqueous environment. Single nanoparticle confinement using electrostatic trapping has been an effective approach to study the fundamental properties of charged molecules under a controlled aqueous environment. Conventionally, geometry-induced electrostatic trapping devices are fabricated using SiOx-based substrates and comprise nanochannels imbedded with nanoindentations such as nanopockets, nanoslits and nanogrids. These geometry-induced electrostatic trapping devices can only trap negatively charged particles, and therefore, to trap positively charged particles, modification of the device surface is required. However, the surface modification process of a nanofluidic device is cumbersome and time consuming. Therefore, here, we present a novel approach for the development of surface-modified geometry-induced electrostatic trapping devices that reduces the surface modification time from nearly 5 days to just a few hours. We utilized polydimethylsiloxane for the development of a surface-modified geometry-induced electrostatic trapping device. To demonstrate the device efficiency and success of the surface modification procedure, a comparison study between a PDMS-based geometry-induced electrostatic trapping device and the surface-modified polydimethylsiloxane-based device was performed. The device surface was modified with two layers of polyelectrolytes (1: poly(ethyleneimine) and 2: poly(styrenesulfonate)), which led to an overall negatively charged surface. Our experiments revealed the presence of a homogeneous surface charge density inside the fluidic devices and equivalent trapping strengths for the surface-modified and native polydimethylsiloxane-based geometry-induced electrostatic trapping devices. This work paves the way towards broader use of geometry-induced electrostatic trapping devices in the fields of biosensing, disease diagnosis, molecular analysis, fluid quality control and pathogen detection.

Motor and Basic Cognitive Functions in Children with Acute Lymphoblastic Leukemia Undergoing Induction or Consolidation Chemotherapy

Children with acute leukemia (ALL) often suffer from several disease and treatment related side-effects during treatment. The aim of the present study was to determine the gross and fine motor functioning and basic cognitive performance of children (n = 25) with ALL who were undergoing induction or consolidation chemotherapy and to compare these characteristics to a normative group (n = 21) of age-matched typically developing children. We assessed the children's motor functions with the Bruininks-Oseretsky Test of Motor Proficiency Second Edition-Short Form and the Nine-hole Peg Test, and we used the Modified Mini-Mental State Exam (MMSE) to evaluate their cognitive performance. Compared to the normative group, children with ALL had lower scores on total motor proficiency and sub-tests scores of motor functions (p < .05), and on the Nine-hole Peg Test performance (p < .05); but their cognitive performance on the MMSE was not significantly different. Children with ALL would likely benefit from structured exercise and rehabilitative interventions during chemotherapy to prevent and/or ameliorate ALL-related motor dysfunction. We also suggest that their cognitive functioning should be further investigated with more extensive well-validated neurocognitive tests for children (e.g., the Wechsler intelligence scales).

Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography

Colloidal quantum dots have found many applications and patterning them on micro- and nanoscale would open a new dimension of tunability for the creation of smaller scale (flexible) electronics or nanophotonic structures. Here we present a simple, general, one-step top-down patterning technique for colloidal quantum dots by means of direct optical or electron beam lithography. We find that both photons and electrons can induce a solubility switch of both PbS and CdSe quantum dot films. The solubility switch can be ascribed to cross-linking of the organic ligands, which we observe from exposure with deep-UV photons (5.5 eV) to extreme-UV photons (91.9 eV), and low-energy (3-70 eV) as well as highly energetic electrons (50 keV). The required doses for patterning are relatively low and feature sizes can be as small as tens of nanometers. The luminescence properties as well as carrier lifetimes remain similar after patterning.

Does ergonomics training have an effect on body posture during computer usage?

BACKGROUND

Computer users are at risk in terms of musculoskeletal disorders. It is known that ergonomics training prevents short-term injuries to the musculoskeletal system, but its long-term effect is unknown.

OBJECTIVE

The aim of our study was to investigate the effect of receiving ergonomics training in undergraduate instruction on posture during computer usage.

METHODS

The present study included 27 individuals who had received training previously and 58 individuals who had not received any training. Their posture was evaluated with Rapid Upper Limb Assessment (RULA) and Musculoskeletal Diseases in Computer Users Frequency and Risk Factors Screening Form (MCFRF).

RESULTS

The percentage of pain experienced at least once in four weeks was much higher in the untrained than the trained group. The RULA scores were 3.7 ± 2.1 and 3.3 ± 0.8 points for the lower body and upper extremity for the trained group, and 4.2 ± 2.2 and 3.9 ± 0.9 points for the lower body and upper extremity, respectively, for the untrained group. The MCFRF scores were 1.9 ± 1.0 and 1.7 ± 1.0 points for the lower body and upper extremity, respectively, for the trained group, and 1.6 ± 1.3 and 1.6 ± 0.8 points for the lower body and upper extremity for the untrained group.

CONCLUSIONS

According to RULA scores, training on ergonomics was effective in reducing the risk level of musculoskeletal disorders. MCFRF scores showed that ergonomics training had no effect on posture during computer usage. Nevertheless, MCFRF evaluates only posture and does not calculate approximate forces that body parts were exposed to. Thus, these areas of MCFRF required improvement. Our study emphasized the importance of the long-term effects of ergonomics training for preventive purposes before musculoskeletal problems manifest.

Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability

Extreme ultraviolet interference lithography (EUV-IL) is used to manufacture topographical guiding patterns to direct the self-assembly of block copolymers. High-accuracy silicon oxide-like patterns with trenches ranging from 68 nm to 117 nm width are fabricated by exposing a hydrogen silsesquioxane (HSQ) resist layer using EUV-IL. We investigate how the accuracy, the low line width roughness and the low line edge roughness of the resulting patterns allow achieving DSA line/space patterns of a PS-b-PMMA (polystyrene-block-poly methyl methacrylate) block copolymer of 11 nm half-pitch with low defectivity. We conduct an in-depth study of the dependence of the DSA pattern morphology on the trench width and on how the neutral brush covers the guiding pattern. We identify the relation between trench width and the emergence of defects with nanometer precision. Based on these studies, we develop a model that extends available free energy models, which allows us to predict the patterning process window.

Changes in the near edge x-ray absorption fine structure of hybrid organic-inorganic resists upon exposure

We report on the near edge x-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet (EUV) and electron beam lithography. The experiments were conducted using a scanning transmission x-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (∼290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remained and formed undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for EUV lithography.

The role of electrophysiological examination in the diagnosis of carpal tunnel syndrome: Analysis of 2516 patients

Objective

The aim of the present study was to assess the correlation between patient history, physical examination, and electrophysiological method of assessment in patients with clinical suspicion of carpal tunnel syndrome (CTS).

Patients and Methods

Results of electrophysiological examinations performed from 2009 to 2016 on 3151 hands of 2516 patients who had symptoms that clinically suggested CTS were examined retrospectively. Patients were assessed in terms of age, gender, direction of nerve compression, and presence and degree of CTS as determined electrophysiologically. Kolmogorov-Smirnov test, Levene's test, and Chi-square test were used for statistical analyses. Level of significance was accepted as P < 0.05.

Results

: Of the 2516 patients, 1838 (73.1%) were female and 678 (26.9%) were male. Average age was 48.60 ± 14.83 years, and 1858 (73.8%) of the patients had complaints in only 1 hand, whereas 658 (26.2%) had complaints in bilateral hands. CTS was detected in 1383 patients (54.9%; female/male: 1019/364) and average age was 52.16 ± 13.84 years. No statistically significant association was found between CTS and gender. Nerve compression was found in 1 hand of 71.5% (1328) of females and 28.5% (530) of males, and this result was found to be statistically significant. No significant association was found between degree and direction of nerve compression.

Conclusion

Only 54.9% of the patients with clinical suspicion were found to have CTS. Given complexity of the hand and a large number of potential pathologies, electrophysiological examination is necessary for definitive diagnosis to avoid unnecessary surgical interventions.

Beam drift and partial probe coherence effects in EUV reflective-mode coherent diffractive imaging

While the industrial implementation of extreme ultraviolet lithography for upcoming technology nodes is becoming ever more realistic, a number of challenges have yet to be overcome. Among them is the need for actinic mask inspection. We report on reflective-mode lensless imaging of a patterned multi-layer mask sample at extreme ultraviolet wavelength that provides a finely structured defect map of the sample under test. Here, we present the imaging results obtained using ptychography in reflection mode at 6° angle of incidence from the surface normal and 13.5 nm wavelength. Moreover, an extended version of the difference map algorithm is employed that substantially enhances the reconstruction quality by taking into account both long and short-term variations of the incident illumination.

Soft electrostatic trapping in nanofluidics

Trapping and manipulation of nano-objects in solution are of great interest and have emerged in a plethora of fields spanning from soft condensed matter to biophysics and medical diagnostics. We report on establishing a nanofluidic system for reliable and contact-free trapping as well as manipulation of charged nano-objects using elastic polydimethylsiloxane (PDMS)-based materials. This trapping principle is based on electrostatic repulsion between charged nanofluidic walls and confined charged objects, called geometry-induced electrostatic (GIE) trapping. With gold nanoparticles as probes, we study the performance of the devices by measuring the stiffness and potential depths of the implemented traps, and compare the results with numerical simulations. When trapping 100 nm particles, we observe potential depths of up to Q≅24 k B T that provide stable trapping for many days. Taking advantage of the soft material properties of PDMS, we actively tune the trapping strength and potential depth by elastically reducing the device channel height, which boosts the potential depth up to Q~200 k B T, providing practically permanent contact-free trapping. Due to a high-throughput and low-cost fabrication process, ease of use, and excellent trapping performance, our method provides a reliable platform for research and applications in study and manipulation of single nano-objects in fluids.

State-of-the-art Nanofabrication in Catalysis

We present recent developments in top-down nanofabrication that have found application in catalysis research. To unravel the complexity of catalytic systems, the design and use of models with control of size, morphology, shape and inter-particle distances is a necessity. The study of well-defined and ordered nanoparticles on a support contributes to the understanding of complex phenomena that govern reactions in heterogeneous and electro-catalysis. We review the strengths and limitations of different nanolithography methods such as electron beam lithography (EBL), photolithography, extreme ultraviolet (EUV) lithography and colloidal lithography for the creation of such highly tunable catalytic model systems and their applications in catalysis. Innovative strategies have enabled particle sizes reaching dimensions below 10 nm. It is now possible to create pairs of particles with distance controlled with an extremely high precision in the order of one nanometer. We discuss our approach to study these model systems at the single-particle level using X-ray absorption spectroscopy and show new ways to fabricate arrays of single nanoparticles or nanoparticles in pairs over a large area using EBL and EUV-achromatic Talbot lithography. These advancements have provided new insights into the active sites in metal catalysts and enhanced the understanding of the role of inter-particle interactions and catalyst supports, such as in the phenomenon of hydrogen spillover. We present a perspective on future directions for employing top-down nanofabrication in heterogeneous and electrocatalysis. The rapid development in nanofabrication and characterization methods will continue to have an impact on understanding of complex catalytic processes.

Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength

Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam.

Size-dependent redox behavior of iron observed by in-situ single nanoparticle spectro-microscopy on well-defined model systems

Understanding the chemistry of nanoparticles is crucial in many applications. Their synthesis in a controlled manner and their characterization at the single particle level is essential to gain deeper insight into chemical mechanisms. In this work, single nanoparticle spectro-microscopy with top-down nanofabrication is demonstrated to study individual iron nanoparticles of nine different lateral dimensions from 80 nm down to 6 nm. The particles are probed simultaneously, under same conditions, during in-situ redox reaction using X-ray photoemission electron microscopy elucidating the size effect during the early stage of oxidation, yielding time-dependent evolution of iron oxides and the mechanism for the inter-conversion of oxides in nanoparticles. Fabrication of well-defined system followed by visualization and investigation of singled-out particles eliminates the ambiguities emerging from dispersed nanoparticles and reveals a significant increase in the initial rate of oxidation with decreasing size, but the reactivity per active site basis and the intrinsic chemical properties in the particles remain the same in the scale of interest. This advance of nanopatterning together with spatially-resolved single nanoparticle X-ray absorption spectroscopy will guide future discourse in understanding the impact of confinement of metal nanoparticles and pave way to solve fundamental questions in material science, chemical physics, magnetism, nanomedicine and nanocatalysis.

Enhancement of the intrinsic fluorescence of adenine using aluminum nanoparticle arrays

This study demonstrates the metal-enhanced fluorescence of adenine using aluminum nanoparticle arrays in the deep UV range. It achieves the reproducible intensity enhancement of intrinsic fluorescence up to 80 on well-defined aluminum nanoparticle arrays at 257 nm excitation. In addition to a high signal enhancement, a strong modification of the fluorescence emission spectrum of adenine is observed. This study illustrates that the label-free detection of DNA bases and proteins that have low intrinsic fluorescence and absorption bands in the deep UV range can be facilitated using aluminum nanostructures.

High-resolution and large-area nanoparticle arrays using EUV interference lithography

Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape dispersion and lack of lateral order. In contrast, conventional top-down lithography techniques provide control over the lateral order and dimensions. However, they are either limited in resolution or have low throughput and therefore do not enable the large patterning area needed to obtain good signal-to-noise ratio in common analytical and characterization techniques. Extreme ultraviolet (EUV) lithography has the throughput and simplicity advantages of photolithography as well as high resolution due to its wavelength. Using EUV achromatic Talbot lithography, we have obtained 15 nm particle arrays with a periodicity of about 100 nm over an area of several square centimeters with high-throughput enabling the use of nanotechnology for fabrication of model systems to study large ensembles of well-defined identical nanoparticles with a density of 10(10) particles cm(-2).

Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.

Towards deep-UV surface-enhanced resonance Raman spectroscopy of explosives: ultrasensitive, real-time and reproducible detection of TNT

We report ultrasensitive and label-free detection of 2,4,6-trinitrotoluene (TNT) deposited by drop coating using deep-ultraviolet surface-enhanced resonance Raman scattering (DUV-SERRS).

Nonlinear superchiral meta-surfaces: tuning chirality and disentangling non-reciprocity at the nanoscale

Circularly polarized light is incident on a nanostructured chiral meta-surface. In the nanostructured unit cells whose chirality matches that of light, superchiral light is forming and strong optical second harmonic generation can be observed.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Metal double layers with sub-10 nm channels

Double-layer plasmonic nanostructures are fabricated by depositing metal at normal incidence onto various resist masks, forming an antenna layer on top of the resist post and a hole layer on the substrate. Antenna plasmon resonances are found to couple to the hole layer, inducing image charges which enhance the near-field for small layer spacings. For continued evaporation above the resist height, a sub-10 nm gap channel develops due to a self-aligned process and a minimal undercut of the resist sidewall. For such double layers with nanogap channels, the average surface-enhanced Raman scattering intensity is improved by a factor in excess of 60 in comparison to a single-layer antenna with the same dimensions. The proposed design principle is compatible with low-cost fabrication, straightforward to implement, and applicable over large areas. Moreover, it can be applied for any particular antenna shape to improve the signals in surface-enhanced spectroscopy applications.

Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths

Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

Gap plasmons and near-field enhancement in closely packed sub-10 nm gap resonators

Pairs of metal nanoparticles with a sub-10 nm gap are an efficient way to achieve extreme near-field enhancement for sensing applications. We demonstrate an attractive alternative based on Fabry-Perot type nanogap resonators, where the resonance is defined by the gap width and vertical elongation instead of the particle geometry. We discuss the crucial design parameters for such gap plasmons to produce maximum near-field enhancement for surface-enhanced Raman scattering and show compatibility of the pattern processing with low-cost and low-resolution lithography. We find a minimum critical metal thickness of 80 nm and observe that the mode coupling from the far field increases by tapering the gap opening. We also show the saturation of the Raman signal for nanogap periodicities below 1 μm, demonstrating efficient funneling of light into such nanogap arrays.

Rendering dark modes bright by using asymmetric split ring resonators

We have studied both theoretically and experimentally symmetric and asymmetric planar metallic Split Ring Resonators. We demonstrate that introducing structural asymmetry makes it possible to excite several higher order modes of both even (l = 2) and odd (l = 3, 5) order, which are otherwise inaccessible for a normally incident plane wave in symmetric structures. Experimentally we observe that the even mode resonances of asymmetric resonators have a quality factor 5.8 times higher than the higher order odd resonances.

Magnetic hot spots in closely spaced thick gold nanorings

Light-matter interaction at optical frequencies is mostly mediated by the electric component of the electromagnetic field, with the magnetic component usually being considered negligible. Recently, it has been shown that properly engineered metallic nanostructures can provide a magnetic response at optical frequencies originated from real or virtual flows of electric current in the structure. In this work, we demonstrate a magnetic plasmonic mode which emerges in closely spaced thick gold nanorings. The plasmonic resonance obtains a magnetic dipole character by sufficiently increasing the height of the nanorings. Numerical simulations show that a virtual current loop appears at resonance for sufficiently thick nanorings, resulting in a strong concentration of the magnetic field in the gap region (magnetic hot spot). We find that there is an optimum thickness that provides the maximum magnetic intensity enhancement (over 200-fold enhancement) and give an explanation of this observation. This strong magnetic resonance, observed both experimentally and theoretically, can be used to build new metamaterials and resonant loop nanoantennas at optical frequencies.

Engineering metal adhesion layers that do not deteriorate plasmon resonances

Adhesion layers, required to stabilize metallic nanostructures, dramatically deteriorate the performances of plasmonic sensors, by severely damping the plasmon modes. In this article, we show that these detrimental effects critically depend on the overlap of the electromagnetic near-field of the resonant plasmon mode with the adhesion layer and can be minimized by careful engineering of the latter. We study the dependence of the geometrical parameters such as layer thickness and shape on the near-field of localized plasmon resonances for traditional adhesion layers such as Cr, Ti, and TiO2. Our experiments and simulations reveal a strong dependence of the damping on the layer thickness, in agreement with the exponential decay of the plasmon near-field. We developed a method to minimize the damping by selective deposition of thin adhesion layers (<1 nm) in a manner that prevents the layer to overlap with the hotspots of the plasmonic structure. Such a designed structure enables the use of standard Cr and Ti adhesion materials to fabricate robust plasmonic sensors without deteriorating their sensitivity.