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Yan Z, Xu N, Deng S. AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS 2/WSe 2/MoS 2 Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:851. [PMID: 38786807 PMCID: PMC11123697 DOI: 10.3390/nano14100851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2024] [Revised: 05/04/2024] [Accepted: 05/11/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional layered materials, characterized by their atomically thin thicknesses and surfaces that are free of dangling bonds, hold great promise for fabricating ultrathin, lightweight, and flexible bipolar junction transistors (BJTs). In this paper, a van der Waals (vdW) BJT was fabricated by vertically stacking MoS2, WSe2, and MoS2 flakes in sequence. The AC characteristics of the vdW BJT were studied for the first time, in which a maximum common emitter voltage gain of around 3.5 was observed. By investigating the time domain characteristics of the device under various operating frequencies, the frequency response of the device was summarized, which experimentally proved that the MoS2/WSe2/MoS2 BJT has voltage amplification capability in the 0-200 Hz region. In addition, the phase response of the device was also investigated. A phase inversion was observed in the low-frequency range. As the operating frequency increases, the relative phase between the input and output signals gradually shifts until it is in phase at frequencies exceeding 2.3 kHz. This work demonstrates the signal amplification applications of the vdW BJTs for neuromorphic computing and wearable healthcare devices.
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Affiliation(s)
| | | | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China; (Z.Y.); (N.X.)
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2
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Nitika, Ahlawat DS, Arora S. Meta-GGA study of 2D AlN/BN planer heterostructure and performance enhancement via strain engineering. J Mol Model 2024; 30:144. [PMID: 38653800 DOI: 10.1007/s00894-024-05948-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Accepted: 04/17/2024] [Indexed: 04/25/2024]
Abstract
CONTEXT The 2D AlN/BN planer heterostructure is a promising wide band gap semiconductor, but systematic studies of its bandgap and optical characteristics under applied strain are scarce. Here, the engineering property of 2D AlN/BN comprising bandgap nature transition and optical absorption capability (from unstrained to strained) have been investigated using density functional theory calculations. The formation energy calculations confirm the stability of the simulated nanoheterostructure. The electronic band structure calculations demonstrate that nanoheterostructure is an indirect bandgap material with a large bandgap of 5.26 eV, which can be modified effectively by applying strain. According to the calculations, the transition from indirect to direct band gap behavior has been observed at +15% biaxial strain with 2.71 eV band gap energy. Meanwhile, calculations for optical absorption and dielectric function reveal that the system has significant absorption peaks in the ultraviolet region which are very sensitive to applied strain. As strain increases, the first absorption peaks are shifted towards a lower energy range from 5.73 eV (Ꜫ= 0 %) to 3.76 eV (Ꜫ = +15%), which features an enhancement of optical absorption for solar and solar-blind regions. Furthermore, we determined that the band edge positions in 2D AlN/BN straddled the water redox potential under strain, indicating its effectiveness as a proficient photocatalyst. These characteristics make 2D AlN/BN planer nanoheterostructure a promising candidate for applications in optoelectronics and photocatalytic water splitting performance. METHODS First principles computations based on density functional theory were employed to carry out all the calculations with a self-consistent approach. For solving the Kohn-Sham equations, the first principles dependent full-potential linearized augmented plane wave scheme were adopted. For addressing the exchange-correlation effects, the generalized gradient approximation of PBEsol functional was used. To prevent interaction between the periodic images, we have inserted a vacuum region of 10 Å in the z-direction. Non-negligible weak dispersion corrections in nanoheterostructure were considered by using the DFT-D3 method of Grimme's. The locally modified Becke-Johnson (lmBJ) exchange potential has also been applied to compute electronic and optical properties in this research to obtain more accurate information.
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Affiliation(s)
- Nitika
- Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055(Hry.), India
| | | | - Sandeep Arora
- Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055(Hry.), India
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3
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Yan Z, Xu N, Deng S. Realization of High Current Gain for Van der Waals MoS 2/WSe 2/MoS 2 Bipolar Junction Transistor. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:718. [PMID: 38668212 PMCID: PMC11053443 DOI: 10.3390/nano14080718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Revised: 04/10/2024] [Accepted: 04/17/2024] [Indexed: 04/29/2024]
Abstract
Two-dimensional (2D) materials have attracted great attention in the past few years and offer new opportunities for the development of high-performance and multifunctional bipolar junction transistors (BJTs). Here, a van der Waals BJT based on vertically stacked n+-MoS2/WSe2/MoS2 was demonstrated. The electrical performance of the device was investigated under common-base and common-emitter configurations, which show relatively large current gains of α ≈ 0.98 and β ≈ 225. In addition, the breakdown characteristics of the vertically stacked n+-MoS2/WSe2/MoS2 BJT were investigated. An open-emitter base-collector breakdown voltage (BVCBO) of 52.9 V and an open-base collector-emitter breakdown voltage (BVCEO) of 40.3 V were observed under a room-temperature condition. With the increase in the operating temperature, both BVCBO and BVCEO increased. This study demonstrates a promising way to obtain 2D-material-based BJT with high current gains and provides a deep insight into the breakdown characteristics of the device, which may promote the applications of van der Waals BJTs in the fields of integrated circuits.
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Affiliation(s)
| | | | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China; (Z.Y.); (N.X.)
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4
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Rathod S, Snowdon M, Jones J, Zhang K, Peng P. In Situ Rapid Fabrication of Graphene-Copper Heterojunctions Using Fiber Laser Direct Writing. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38048639 DOI: 10.1021/acsami.3c11552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/06/2023]
Abstract
Multifunctional three-dimensional heterostructures for flexible electronics have gained significant attention due to their distinctive structural formability and superior electronic and optoelectronic properties. Nevertheless, conventional fabrication techniques have yet to be optimized for flexible substrates. In this study, a straightforward fiber laser direct writing (FLDW) process is demonstrated for the simultaneous fabrication of diodes (PN junctions) and bipolar junction transistors (BJTs) on flexible polyimide substrates, which is realized through the deposition of multifunctional p- or n-type copper oxide films (CuOx) and p- or n-type porous laser-reduced graphene oxide films (LrGO) using fiber laser ablation and deposition. The presence of both p- and n-type semiconductor films is confirmed through material characterization. The fabricated PN junctions exhibit reasonable diode rectification ratios, ranging from 20 to 220, and perform reliably under numerous operating conditions such as light-dark illumination and elevated temperatures. Furthermore, I-V curve analysis indicates that the current gain and electrical performance of printed negative-positive-negative (NPN) (or positive-negative-positive, PNP) BJTs can be tailored by adjusting the laser energy density of the FLDW process and the base gap width of the BJTs. As a proof of concept, the FLDW process is successfully employed to deposit both NPN (or PNP) BJTs composed of LrGO/CuOx heterostructures with controlled current gains. Its ease of operation, versatility, and cost-effectiveness make FLDW promising for large-scale flexible electronics fabrication.
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Affiliation(s)
- Shasvat Rathod
- Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Monika Snowdon
- Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Joshua Jones
- Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Kaiping Zhang
- Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Peng Peng
- Centre for Advanced Materials Joining, Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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5
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Zhang J, Koneru A, Sankaranarayanan SKRS, Lilley CM. Graph Neural Network Guided Evolutionary Search of Grain Boundaries in 2D Materials. ACS APPLIED MATERIALS & INTERFACES 2023; 15:20520-20530. [PMID: 37040261 PMCID: PMC10141246 DOI: 10.1021/acsami.3c01161] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 03/27/2023] [Indexed: 06/19/2023]
Abstract
Grain boundaries (GBs) in two-dimensional (2D) materials are known to dramatically impact material properties ranging from the physical, chemical, mechanical, electronic, and optical, to name a few. Predicting a range of physically realistic GB structures for 2D materials is critical to exercising control over their properties. This, however, is nontrivial given the vast structural and configurational (defect) search space between lateral 2D sheets with varying misfits. Here, in a departure from traditional evolutionary search methods, we introduce a workflow that combines the Graph Neural Network (GNN) and an evolutionary algorithm for the discovery and design of novel 2D lateral interfaces. We use a representative 2D material, blue phosphorene (BP), and identify 2D GB structures to test the efficacy of our GNN model. The GNN was trained with a computationally inexpensive machine learning bond order potential (Tersoff formalism) and density functional theory (DFT). Systematic downsampling of the training data sets indicates that our model can predict structural energy under 0.5% mean absolute error with sparse (<2000) DFT generated energy labels for training. We further couple the GNN model with a multiobjective genetic algorithm (MOGA) and demonstrate strong accuracy in the ability of the GNN to predict GBs. Our method is generalizable, is material agnostic, and is anticipated to accelerate the discovery of 2D GB structures.
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Affiliation(s)
- Jianan Zhang
- Department
of Mechanical and Industrial Engineering, The University of Illinois at Chicago, 842 W. Taylor Street, Chicago, Illinois 60607, United States
| | - Aditya Koneru
- Department
of Mechanical and Industrial Engineering, The University of Illinois at Chicago, 842 W. Taylor Street, Chicago, Illinois 60607, United States
- Center
for Nanoscale Materials, Argonne National
Lab, Argonne, Illinois 60439, United States
| | - Subramanian K. R. S. Sankaranarayanan
- Department
of Mechanical and Industrial Engineering, The University of Illinois at Chicago, 842 W. Taylor Street, Chicago, Illinois 60607, United States
- Center
for Nanoscale Materials, Argonne National
Lab, Argonne, Illinois 60439, United States
| | - Carmen M. Lilley
- Department
of Mechanical and Industrial Engineering, The University of Illinois at Chicago, 842 W. Taylor Street, Chicago, Illinois 60607, United States
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6
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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7
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Andreev M, Seo S, Jung KS, Park JH. Looking Beyond 0 and 1: Principles and Technology of Multi-Valued Logic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108830. [PMID: 35894513 DOI: 10.1002/adma.202108830] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 05/27/2022] [Indexed: 06/15/2023]
Abstract
Ever since the invention of solid-state transistors, binary devices have dominated the electronics industry. Although the binary technology links the natural property of devices to be in the ON or OFF state with two logic levels, it provides the least possible information content per interconnect. Multi-valued logic (MVL) has long been considered as a means of improving the computation efficiency and reducing the power consumption of modern chips. In view of the power density limits of the conventional complementary metal-oxide-semiconductor technology, MVL technologies have recently gained even more attention, and various MVL unit devices based on conventional and emerging materials have been proposed. Herein, the recent achievements toward the development of compact MVL unit devices are reviewed. First, basic principles of MVL technologies are introduced by describing methods of obtaining multiple logic states and discussing radix-related aspects of MVL computation. Next, MVL unit devices are classified and overviewed with emphasis on principles of operation, technologies, and applications. Finally, a comparative discussion of strengths and weaknesses is provided for each class of MVL devices, and the review concludes with the outlook for the MVL field.
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Affiliation(s)
- Maksim Andreev
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Kil-Su Jung
- Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
- Memory Technology Design Team, Samsung Electronics Co. Ltd, Hwasung, 18448, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
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8
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Chang WH, Lu CI, Yang TH, Yang ST, Simbulan KB, Lin CP, Hsieh SH, Chen JH, Li KS, Chen CH, Hou TH, Lu TH, Lan YW. Defect-engineered room temperature negative differential resistance in monolayer MoS 2 transistors. NANOSCALE HORIZONS 2022; 7:1533-1539. [PMID: 36285561 DOI: 10.1039/d2nh00396a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negative differential resistance (NDR) effect has been widely investigated for the development of various electronic devices. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) have also recently exhibited NDR behavior in several of their heterostructures. However, to observe NDR in the form of monolayer MoS2, theoretical prediction has revealed that the material should be more profoundly affected by sulfur (S) vacancy defects. In this work, monolayer MoS2 FETs with a specific amount of S-vacancy defects are fabricated using three approaches, namely chemical treatment (KOH solution), physical treatment (electron beam bombardment), and as-grown MoS2. Based on systematic studies on the correlation of the S-vacancies with both the device's electron transport characteristics and spectroscopic analysis, the NDR has been clearly observed in the defect-engineered monolayer MoS2 FETs with an S-vacancy (VS) amount of ∼5 ± 0.5%. Consequently, stable NDR behavior can be observed at room temperature, and its peak-to-valley ratio can also be effectively modulated via the gate electric field and light intensity. Through these results, it is envisioned that more electronic applications based on defect-engineered layered TMDs will emerge in the near future.
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Affiliation(s)
- Wen-Hao Chang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Chun-I Lu
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Tilo H Yang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Shu-Ting Yang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Kristan Bryan Simbulan
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
- Department of Mathematics and Physics, University of Santo Tomas, Manila 1008, Philippines
| | - Chih-Pin Lin
- Department of Electronics Engineering & Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | | | - Jyun-Hong Chen
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, Taiwan
| | - Kai-Shin Li
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Tuo-Hung Hou
- Department of Electronics Engineering & Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Ting-Hua Lu
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan.
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9
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Li M, Fu H, Wang B, Cheng J, Hu W, Yin B, Peng P, Zhou S, Gao X, Jia C, Guo X. Dipole-Modulated Charge Transport through PNP-Type Single-Molecule Junctions. J Am Chem Soc 2022; 144:20797-20803. [DOI: 10.1021/jacs.2c08664] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Affiliation(s)
- Mingyao Li
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
| | - Huanyan Fu
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin300350, P. R. China
| | - Boyu Wang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin300350, P. R. China
| | - Jie Cheng
- Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai200032, P. R. China
| | - Weilin Hu
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
| | - Bing Yin
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
| | - Peizhen Peng
- Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai200032, P. R. China
| | - Shuyao Zhou
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
| | - Xike Gao
- Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai200032, P. R. China
| | - Chuancheng Jia
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin300350, P. R. China
| | - Xuefeng Guo
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing100871, P. R. China
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin300350, P. R. China
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10
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Park H, Jung GS, Ibrahim KM, Lu Y, Tai KL, Coupin M, Warner JH. Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd 2Se 3-MoS 2 Heterostructures. ACS NANO 2022; 16:10260-10272. [PMID: 35829720 DOI: 10.1021/acsnano.1c09019] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) materials form heterostructures in both the lateral and vertical directions when two different materials are interfaced, but with totally different bonding mechanisms of covalent in-plane to van der Waal's layered interactions. Understanding how the competition between lateral and vertical forces influences the epitaxial growth is important for future materials development of complex mixed layered heterostructures. Here, we use atomic-resolution annular dark-field scanning transmission electron microscopy to study the detailed atomic arrangements at mixed 2D heterostructure interfaces composed of two semiconductors with distinctly different crystal symmetry and elemental composition, Pd2Se3:MoS2, in order to understand the role of different chemical bonds on the resultant epitaxy. Pd2Se3 is grown off the step edge in bilayer MoS2, and the vertical and lateral epitaxial relationships of the Pd2Se3-MoS2 heterostructures are investigated. We find that the similarity of geometry at the interface with one metal (Pd or Mo) atoms bonded with two chalcogens (S or Se) are the crucial factors to make the atomically stitched lateral junction of 2D heterostructures. In addition, the vertical van der Waal interactions that are normally dominant in layered materials can be overcome by in-plane forces if the interfacial atomic stitching is high in quality and low in defect density. This knowledge should help guide the approaches for improving the epitaxy in mixed 2D heterostructures and seamless stitching of in-plane 2D heterostructures with various complex monolayer structures.
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Affiliation(s)
- Hyoju Park
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Gang Seob Jung
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Khaled M Ibrahim
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Kuo-Lun Tai
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Matthew Coupin
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Jamie H Warner
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
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11
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Yu GN, Yi GY, Cui WB, Zhang LL, Li XS, Gong WJ. Quantum transmission through the n-p-n heterojunction of massive 8- Pmmnborophene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:085401. [PMID: 34787103 DOI: 10.1088/1361-648x/ac3a46] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Accepted: 11/16/2021] [Indexed: 06/13/2023]
Abstract
We investigate the quantum transmission through the n-p-n heterojunction of massive 8-Pmmnborophene. It is found that the Dirac mass of the electron interacts nontrivially with the anisotropy of the 8-Pmmnborophene, leading to the occurrence of new transmission behaviors in this n-p-n heterojunction. Firstly, the effective energy range of nonzero transmission can be reduced but deviates from the mass amplitude, which induces the further controllability of the transmission property. Secondly, even if the equal-energy surfaces in the p and n parts do not encounter in thek-space, finite transmission is allowed to occur as well. In addition, the existence of Dirac mass can change the reflection manner from the retroreflection to the specular reflection under appropriate conditions. The findings in this work can be helpful in describing the quantum transport properties of the heterojunction based on 8-Pmmnborophene.
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Affiliation(s)
- Guo-Na Yu
- College of Sciences, Northeastern University, Shenyang 110819, People's Republic of China
| | - Guang-Yu Yi
- College of Sciences, Northeastern University, Shenyang 110819, People's Republic of China
| | - Wei-Bin Cui
- State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People's Republic of China
| | - Lian-Lian Zhang
- College of Sciences, Northeastern University, Shenyang 110819, People's Republic of China
| | - Xue-Si Li
- College of Sciences, Northeastern University, Shenyang 110819, People's Republic of China
| | - Wei-Jiang Gong
- College of Sciences, Northeastern University, Shenyang 110819, People's Republic of China
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12
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Yang S, Pi L, Li L, Liu K, Pei K, Han W, Wang F, Zhuge F, Li H, Cheng G, Zhai T. 2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2106537. [PMID: 34614261 DOI: 10.1002/adma.202106537] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Indexed: 06/13/2023]
Abstract
Bipolar junction transistor (BJT) as one important circuit element is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising in building high-amplification and high-frequency BJTs because they can be naturally thin and highly designable in tailoring components properties. However, currently the low emitter injection efficiency results in only moderate current gain achieved in the pioneer researches, severely restraining its future development. Herein, it is shown that an elaborately designed double heterojunction bipolar transistor (DHBT) can greatly promote the injection efficiency, improving the current gain by order of magnitude. In this DHBT high-doping-density wide-bandgap 2D Cu9 S5 is used as emitter and narrow-bandgap PtS2 as base. This heterostructure efficiently suppresses the reverse electron flux from base and increase the injection efficiency. Consequently, the DHBT achieves an excellent current gain (β ≈ 910). This work systematically explores the electrical behavior of 2D materials based DHBT, and provides deep insight of the architecture design for building high gain DHBT, which may promote the applications of 2Dheterojunctions in the fields of integrated circuits.
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Affiliation(s)
- Sanjun Yang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Liang Li
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - FuWei Zhuge
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Gang Cheng
- Key Lab for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng, 475004, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Choi W, Ahn J, Kim KT, Jin HJ, Hong S, Hwang DK, Im S. Ambipolar Channel p-TMD/n-Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2103079. [PMID: 34338384 DOI: 10.1002/adma.202103079] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Revised: 05/27/2021] [Indexed: 06/13/2023]
Abstract
Highly crystalline 2D/3D-mixed p-transition metal dichalcogenide (TMD)/n-Ga2 O3 heterojunction devices are fabricated by mechanical exfoliation of each p- and n-type material. N-type β-Ga2 O3 and p-type TMD separately play as a channel for junction field effect transistors (JFETs) with each type of carriers as well as materials for a heterojunction PN diode. The work thus mainly focuses on such ambipolar channel transistors with two different types of channel in a single device architecture. For more extended applications, the transparency of high energy band gap β-Ga2 O3 (Eg ≈ 4.8 eV) is taken advantage of, firstly to measure the electrical energy gap of p-TMDs receiving visible or near infrared (NIR) photons through the β-Ga2 O3 . Next, the p-TMD/n-Ga2 O3 JFETs are put to high speed photo-sensing which is achieved from the p-TMD channel under reverse bias voltages on n-Ga2 O3 . The photo-switching cutoff frequency appears to be ≈16 and 29 kHz for visible red and NIR illuminations, respectively, on the basis of -3 dB photoelectric power loss. Such a high switching speed of the JFET is attributed to the fast transport of photo-carriers in TMD channels. The 2D/3D-mixed ambipolar channel JFETs and their photo-sensing applications are regarded novel, promising, and practically easy to achieve.
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Affiliation(s)
- Wonjun Choi
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jongtae Ahn
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), 85, Hoegi-ro, Dongdaemun-gu, Seoul, 02792, Republic of Korea
| | - Ki-Tae Kim
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hye-Jin Jin
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sungjae Hong
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Do Kyung Hwang
- Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), 85, Hoegi-ro, Dongdaemun-gu, Seoul, 02792, Republic of Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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14
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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15
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Bai X, Li S, Das S, Du L, Dai Y, Yao L, Raju R, Du M, Lipsanen H, Sun Z. Single-step chemical vapour deposition of anti-pyramid MoS 2/WS 2 vertical heterostructures. NANOSCALE 2021; 13:4537-4542. [PMID: 33599628 DOI: 10.1039/d0nr08281c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 μm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.
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Affiliation(s)
- Xueyin Bai
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Japan
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Luojun Du
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Yunyun Dai
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Lide Yao
- Department of Applied Physics, Aalto University, Finland
| | - Ramesh Raju
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Mingde Du
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Finland.
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Finland. and QTF Centre of Excellence, Department of Applied Physics, Aalto University, Finland
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16
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Su BW, Zhang XL, Yao BW, Guo HW, Li DK, Chen XD, Liu ZB, Tian JG. Laser Writable Multifunctional van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003593. [PMID: 33230902 DOI: 10.1002/smll.202003593] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Revised: 10/28/2020] [Indexed: 06/11/2023]
Abstract
Achieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre-fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS2 , the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base width WB , which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@WB ≈600 nm) and ≈12 (@WB ≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe2 /MoS2 heterostructure device. The current work demonstrates a novel, cost-effective, and universal method to fabricate multifunctional nanoelectronic devices. The proposed approach exhibits promise for large-scale integrated circuits based on 2D heterostructures.
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Affiliation(s)
- Bao-Wang Su
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - Xi-Lin Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - Bin-Wei Yao
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300071, China
| | - Hao-Wei Guo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - Xu-Dong Chen
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300071, China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin, 300071, China
- The collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin, 300071, China
- The collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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17
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Afzal AM, Iqbal MZ, Dastgeer G, Nazir G, Mumtaz S, Usman M, Eom J. WS 2/GeSe/WS 2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times. ACS APPLIED MATERIALS & INTERFACES 2020; 12:39524-39532. [PMID: 32805800 DOI: 10.1021/acsami.0c05114] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Vertical heterostructures of transition-metal dichalcogenide semiconductors have attracted considerable attention and offer new opportunities in electronics and optoelectronics for the development of innovative and multifunctional devices. Here, we designed a novel and compact vertically stacked two-dimensional (2D) n-WS2/p-GeSe/n-WS2 van der Waals (vdW) heterojunction bipolar transistor (2D-HBT)-based chemical sensor. The performance of the 2D-HBT vdW heterostructure with different base thicknesses is investigated by two configurations, namely, common-emitter and common-base configurations. The 2D-HBT vdW heterostructure exhibited intriguing electrical characteristics of current amplification with large gains of α ≈ 1.11 and β ≈ 20.7. In addition, 2D-HBT-based devices have been investigated as chemical sensors for the detection of NH3 and O2 gases at room temperature. The effects of different environments, such as air, vacuum, O2, and NH3, were also analyzed in dark conditions, and with a light of 633 nm wavelength, ultrahigh sensitivity and fast response and recovery times (6.55 and 16.2 ms, respectively) were observed. These unprecedented outcomes have huge potential in modern technology in the development of low-power amplifiers and gas sensors.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
- Department of Electrical and Biological Physics, Kwangwoon University, Seoul 01897, Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
| | - Ghulam Dastgeer
- IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Ghazanfar Nazir
- Department of Chemistry, Inha University, Incheon 22212, Korea
| | - Sohail Mumtaz
- Department of Electrical and Biological Physics, Kwangwoon University, Seoul 01897, Korea
| | - Muhammad Usman
- College of Physics and Optoelectronic Engineering, Shenzen University, Shenzen 518060, China
| | - Jonghwa Eom
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
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18
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Beck ME, Hersam MC. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices. ACS NANO 2020; 14:6498-6518. [PMID: 32463222 DOI: 10.1021/acsnano.0c03299] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
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Affiliation(s)
- Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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19
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Su BW, Yao BW, Zhang XL, Huang KX, Li DK, Guo HW, Li XK, Chen XD, Liu ZB, Tian JG. A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing. NANOSCALE ADVANCES 2020; 2:1733-1740. [PMID: 36132297 PMCID: PMC9417257 DOI: 10.1039/d0na00201a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2019] [Accepted: 03/13/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.
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Affiliation(s)
- Bao-Wang Su
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Bin-Wei Yao
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology Tianjin 30071 China
| | - Xi-Lin Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Kai-Xuan Huang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Hao-Wei Guo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Xiao-Kuan Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Xu-Dong Chen
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology Tianjin 30071 China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
- Renewable Energy Conversion and Storage Center, Nankai University Tianjin 300071 China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
- Renewable Energy Conversion and Storage Center, Nankai University Tianjin 300071 China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
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20
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Lv L, Zhuge F, Xie F, Xiong X, Zhang Q, Zhang N, Huang Y, Zhai T. Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization. Nat Commun 2019; 10:3331. [PMID: 31350401 PMCID: PMC6659647 DOI: 10.1038/s41467-019-11328-0] [Citation(s) in RCA: 70] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2018] [Accepted: 07/02/2019] [Indexed: 11/09/2022] Open
Abstract
Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS2) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W-1 and detectivity over 1013 Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Fuwei Zhuge
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China.
| | - Fengjun Xie
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Xujing Xiong
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Qingfu Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Nan Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Yu Huang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China.
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Wang J, Li Z, Chen H, Deng G, Niu X. Recent Advances in 2D Lateral Heterostructures. NANO-MICRO LETTERS 2019; 11:48. [PMID: 34138018 PMCID: PMC7770774 DOI: 10.1007/s40820-019-0276-y] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2019] [Accepted: 05/09/2019] [Indexed: 05/15/2023]
Abstract
Recent developments in synthesis and nanofabrication technologies offer the tantalizing prospect of realizing various applications from two-dimensional (2D) materials. A revolutionary development is to flexibly construct many different kinds of heterostructures with a diversity of 2D materials. These 2D heterostructures play an important role in semiconductor and condensed matter physics studies and are promising candidates for new device designs in the fields of integrated circuits and quantum sciences. Theoretical and experimental studies have focused on both vertical and lateral 2D heterostructures; the lateral heterostructures are considered to be easier for planner integration and exhibit unique electronic and photoelectronic properties. In this review, we give a summary of the properties of lateral heterostructures with homogeneous junction and heterogeneous junction, where the homogeneous junctions have the same host materials and the heterogeneous junctions are combined with different materials. Afterward, we discuss the applications and experimental synthesis of lateral 2D heterostructures. Moreover, a perspective on lateral 2D heterostructures is given at the end.
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Affiliation(s)
- Jianwei Wang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Zhiqiang Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Haiyuan Chen
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Guangwei Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
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22
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Srivastava PK, Hassan Y, Gebredingle Y, Jung J, Kang B, Yoo WJ, Singh B, Lee C. Multifunctional van der Waals Broken-Gap Heterojunction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804885. [PMID: 30730094 DOI: 10.1002/smll.201804885] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2018] [Revised: 01/07/2019] [Indexed: 06/09/2023]
Abstract
The finite energy band-offset that appears between band structures of employed materials in a broken-gap heterojunction exhibits several interesting phenomena. Here, by employing a black phosphorus (BP)/rhenium disulfide (ReS2 ) heterojunction, the tunability of the BP work function (Φ BP ) with variation in flake thickness is exploited in order to demonstrate that a BP-based broken-gap heterojunction can manifest diverse current-transport characteristics such as gate tunable rectifying p-n junction diodes, Esaki diodes, backward-rectifying diodes, and nonrectifying devices as a consequence of diverse band-bending at the heterojunction. Diversity in band-bending near heterojunction is attributed to change in the Fermi level difference (Δ) between BP and ReS2 sides as a consequence of Φ BP modulation. No change in the current transport characteristics in several devices with fixed Δ also provides further evidence that current-transport is substantially impacted by band-bending at the heterojunction. Optoelectronic experiments on the Esaki diode and the p-n junction diode provide experimental evidence of band-bending diversity. Additionally, the p+ -n-p junction comprising BP (38 nm)/ReS2 /BP(5.8 nm) demonstrates multifunctionality of binary and ternary inverters as well as exhibiting the behavior of a bipolar junction transistor with common-emitter current gain up to 50.
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Affiliation(s)
| | - Yasir Hassan
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Yisehak Gebredingle
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jaehyuck Jung
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Byunggil Kang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Budhi Singh
- Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India
| | - Changgu Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
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23
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Simbulan KBC, Chen PC, Lin YY, Lan YW. A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics. J Vis Exp 2018. [PMID: 30222144 DOI: 10.3791/57885] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022] Open
Abstract
Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.
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Affiliation(s)
| | - Po-Chun Chen
- Department of Physics, National Taiwan Normal University; National Applied Research Laboratories (NARL), National Nano Device Laboratories (NDL)
| | - Yun-Yan Lin
- Department of Physics, National Taiwan Normal University; National Applied Research Laboratories (NARL), National Nano Device Laboratories (NDL)
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University; National Applied Research Laboratories (NARL), National Nano Device Laboratories (NDL);
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24
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Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P. High Performance Amplifier Element Realization via MoS 2/GaTe Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700830. [PMID: 29721428 PMCID: PMC5908369 DOI: 10.1002/advs.201700830] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2017] [Revised: 12/01/2017] [Indexed: 05/27/2023]
Abstract
2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.
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Affiliation(s)
- Xiao Yan
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - David Wei Zhang
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Chunsen Liu
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Shuiyuan Wang
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Shijin Ding
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Gengfeng Zheng
- Laboratory of Advanced MaterialsDepartment of ChemistryCollaborative Innovation Center of Chemistry for Energy MaterialsFudan UniversityShanghai200433China
| | - Peng Zhou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
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