Scalable Low-Band-Gap Sb2Se3 Thin-Film Photocathodes for Efficient Visible-Near-Infrared Solar Hydrogen Evolution

Suppressing Se Vacancies in Sb2Se3 Photocathode by In Situ Annealing with Moderate Se Vapor Pressure for Efficient Photoelectrochemical Water Splitting

Sb2Se3 emerges as a promising material for solar energy conversion devices. Unfortunately, the common deep-level defect VSe (selenium vacancy) in Sb2Se3 results in a low solar conversion efficiency. The post selenization process has been widely adopted for suppressing VSe. However, the effect of selenization on suppressing VSe is often compromised and even more VSe are induced due to defect-correlation. Herein, high-quality Sb2Se3 films are prepared using an unconventional selenization process, with precisely regulating in situ annealing Se vapor pressure. It is found that moderate Se vapor pressure annealing can efficiently suppress VSe by overcoming defect-correlation, as well as promotes grain growth and forms a better heterojunction band alignment. Consequently, the Sb2Se3 photocathode shows a high-level photocurrent of 19.5 mA cm-2 at 0 VRHE, an onset potential of 0.40 VRHE and a half-cell solar-to-hydrogen conversion efficiency of 1.9%, owing to the inhibited charge recombination, excellent charge transport and interface charge extraction. This work provides a significant insight to suppress deep-level defect VSe by adjusting Se vapor pressure for efficient Sb2Se3 photocathode.

Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide

Self-assembled, highly anisotropic nanostructures are spontaneously formed in the molecular beam epitaxy of antimony triselenide on GaAs substrates. These one-dimensional (1D) nanostripes have all the orientations parallel to the substrate surface and preserve the epitaxial relationship with the substrate. The shape of the nanostripes is directly related to the highly anisotropic stibnite structure of antimony triselenide which consists of 1D ribbons held together by weak van der Waals forces. The fabrication of well-ordered arrays of horizontal nanostripes aligned in directions defined by the orientation of the substrate may contribute significantly to the development of electronic circuits and networks composed of interconnected nanostructures leading to applications in neuromorphic devices, gas sensors and polarization-sensitive photodetectors.

Recent Advances in Antimony Selenide Photodetectors

Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth-abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive-type and photodiode-type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic-integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.

Template Selection Strategy for Synthesis of One-Dimensional CrSbSe3 Ferromagnetic Semiconductor Nanoribbons

CrSbSe3─the only experimentally validated one-dimensional (1D) ferromagnetic semiconductor─has recently attracted significant attention. However, all reported synthesis methods for CrSbSe3 nanocrystals are based on top-down methods. Here we report a template selection strategy for the bottom-up synthesis of CrSbSe3 nanoribbons. This strategy relies on comparing the formation energies of potential binary templates to the ternary target product. It enables us to select Sb2Se3 with the highest formation energy, along with its 1D crystal structure, as the template instead of Cr2Se3 with the lowest formation energy, thereby facilitating the transformation from Sb2Se3 to CrSbSe3 by replacing half of the Sb atoms in Sb2Se3 with Cr atoms. The as-prepared CrSbSe3 nanoribbons exhibit a length of approximately 5 μm, a width ranging from 80 to 120 nm, and a thickness of about 5 nm. The single CrSbSe3 nanoribbon presents typical semiconductor behavior and ferromagnetism, confirming the intrinsic ferromagnetism in the 1D CrSbSe3 semiconductor.

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb2Se3/CdS Thin Film p-n Heterojunction

Harvesting solar energy for different applications requires the continuous development of new semiconducting materials to exploit a broad part of the solar spectrum. In this direction, antimony selenide (Sb2Se3) has attracted a tremendous amount of attention over the past few years as a light-harvesting material for photovoltaic device applications owing to its phase stability, high absorption coefficient, earth abundance, and low toxicity. Here, we have fabricated a high-quality heterojunction of a p-type Sb2Se3 film and an n-type CdS film using the thermal evaporation technique. The photocurrent of the heterosystem was significantly higher than that of the pristine materials. This optoelectronic response was investigated using femtosecond transient absorption (TA) spectroscopy. TA study reveals the existence of an instantaneous electron transfer from Sb2Se3 to CdS, accompanied by a substantial charge separation at the heterojunction. Our study deals with the investigation of a well-designed p-n device, paving the way for the fabrication of highly efficient photovoltaic devices.

Polymeric viologen-based electron transfer mediator for improving the photoelectrochemical water splitting on Sb2Se3 photocathode

The photogenerated charge carrier separation and transportation of inside photocathodes can greatly influence the performance of photoelectrochemical (PEC) H2 production devices. Coupling TiO2 with p-type semiconductors to construct heterojunction structures is one of the most widely used strategies to facilitate charge separation and transportation. However, the band position of TiO2 could not perfectly match with all p-type semiconductors. Here, taking antimony selenide (Sb2Se3) as an example, a rational strategy was developed by introducing a viologen electron transfer mediator (ETM) containing polymeric film (poly-1,1'-dially-[4,4'-bipyridine]-1,1'-diium, denoted as PV2+) at the interface between Sb2Se3 and TiO2 to regulate the energy band alignment, which could inhibit the recombination of photogenerated charge carriers of interfaces. With Pt as a catalyst, the constructed Sb2Se3/PV2+/TiO2/Pt photocathode showed a superior PEC hydrogen generation activity with a photocurrent density of -18.6 mA cm-2 vs. a reversible hydrogen electrode (RHE) and a half-cell solar-to-hydrogen efficiency (HC-STH) of 1.54% at 0.17 V vs. RHE, which was much better than that of the related Sb2Se3/TiO2/Pt photocathode without PV2+ (-9.8 mA cm-2, 0.51% at 0.10 V vs. RHE).

Stable water splitting using photoelectrodes with a cryogelated overlayer

Hydrogen production techniques based on solar-water splitting have emerged as carbon-free energy systems. Many researchers have developed highly efficient thin-film photoelectrochemical (PEC) devices made of low-cost and earth-abundant materials. However, solar water splitting systems suffer from short lifetimes due to catalyst instability that is attributed to both chemical dissolution and mechanical stress produced by hydrogen bubbles. A recent study found that the nanoporous hydrogel could prevent the structural degradation of the PEC devices. In this study, we investigate the protection mechanism of the hydrogel-based overlayer by engineering its porous structure using the cryogelation technique. Tests for cryogel overlayers with varied pore structures, such as disconnected micropores, interconnected micropores, and surface macropores, reveal that the hydrogen gas trapped in the cryogel protector reduce shear stress at the catalyst surface by providing bubble nucleation sites. The cryogelated overlayer effectively preserves the uniformly distributed platinum catalyst particles on the device surface for over 200 h. Our finding can help establish semi-permanent photoelectrochemical devices to realize a carbon-free society.

Key Strategies on Cu2O Photocathodes toward Practical Photoelectrochemical Water Splitting

Cuprous oxide (Cu2O) has been intensively in the limelight as a promising photocathode material for photoelectrochemical (PEC) water splitting. The state-of-the-art Cu2O photocathode consists of a back contact layer for transporting the holes, an overlayer for accelerating charge separation, a protection layer for prohibiting the photocorrosion, and a hydrogen evolution reaction (HER) catalyst for reducing the overpotential of HER, as well as a Cu2O layer for absorbing sunlight. In this review, the fundamentals and recent research progress on these components of efficient and durable Cu2O photocathodes are analyzed in detail. Furthermore, key strategies on the development of Cu2O photocathodes for the practical PEC water-splitting system are suggested. It provides the specific guidelines on the future research direction for the practical application of a PEC water-splitting system based on Cu2O photocathodes.

Unlocking the Potential of Nanoribbon-Based Sb2S3/Sb2Se3 van-der-Waals Heterostructure for Solar-Energy-Conversion and Optoelectronics Applications

High-performance nanosized optoelectronic devices based on van der Waals (vdW) heterostructures have significant potential for use in a variety of applications. However, the investigation of nanoribbon-based vdW heterostructures are still mostly unexplored. In this study, based on first-principles calculations, we demonstrate that a Sb2S3/Sb2Se3 vdW heterostructure, which is formed by isostructural nanoribbons of stibnite (Sb2S3) and antimonselite (Sb2Se3), possesses a direct band gap with a typical type-II band alignment, which is suitable for optoelectronics and solar energy conversion. Optical absorption spectra show broad profiles in the visible and UV ranges for all of the studied configurations, indicating their suitability for photodevices. Additionally, in 1D nanoribbons, we see sharp peaks corresponding to strongly bound excitons in a fashion similar to that of other quasi-1D systems. The Sb2S3/Sb2Se3 heterostructure is predicted to exhibit a remarkable power conversion efficiency (PCE) of 28.2%, positioning it competitively alongside other extensively studied two-dimensional (2D) heterostructures.

Large lateral photovoltaic effect with ultrafast optical relaxation time in SnS2/n-Si junctions

A large lateral photovoltaic effect (LPE) with a fast optical response time is necessary to develop high-performance position-sensitive detectors. In this paper, we report an LPE with a high self-powered position sensitivity and ultrafast optical relaxation time in S n S 2/n-S i junctions prepared using pulsed laser deposition. A large built-in electric field was generated at the S n S 2/S i interface, which resulted in a large LPE with a positional sensitivity of up to 116 mV/mm. Furthermore, the measurement circuit with multiple parallel resistors had a strong influence on the ultrafast optical response time of the LPE and the fastest optical relaxation time observed was ∼0.44µs. Our results suggest that the S n S 2/S i junction would be a promising candidate for a wide range of optoelectronic device applications.

Hole Storage Interfacial Regulation of Sb2Se3 Photocathode with Significantly Enhanced Photoelectrochemical Performance

Although interfacial engineering materials for antimony selenide (Sb₂Se₃) photocathodes have been intensively studied, most of the previous research has focused on the development of photogenerated electron transfer promoters. In this work, Sb₂Se₃ photocathodes are innovatively modified by using ferrihydrite (Fh), which has been widely used as a hole storage layer in photoanodes. After modifying Fh, the photocurrent density of the Sb₂Se₃ photocathode was increased from -0.27 to -1.6 mA cm^-2 at 0 V_RHE with the onset potential positive shift about 150 mV, and an impressive injection efficiency of 83.84% was achieved. The major contribution of Fh to the photoelectrochemical (PEC) performance enhancement was demonstrated by various characterization studies. The results show that the enhancement performance of PEC is largely attributed to the capture of back-migrating holes by Fh, the reduction of interfacial charge transfer resistance, and the significant increase in electrochemical active surface area (ECSA). This work presents new insights into the application of hole storage layers in Sb₂Se₃-based photocathodes.

Orientation dependence of electronic properties of antimony selenide nanowires

We present a comprehensive DFT study of size-dependent atomic and electronic properties of antimony selenide (Sb 2 Se 3) nanowires in three main crystallographic directions. Our calculations show a significant enhancement in the band gap of wires oriented in [100] and [010] directions due to confinement effects, however the band gap of [001] oriented wires is reduced with respect to bulk. We attribute this anomaly in band gap reduction to the surface reconstructions in these nanostructures. These surface reconstructions are similar to the polyhedral distortions observed in bulk Sb 2 Se 3 under high pressure leading to the insulator-metal transition related to the topological insulating states and then at lower temperature (8K) to superconductivity.

Sb2S3/Sb2Se3 heterojunction for high-performance photodetection and hydrogen production

Photoelectrochemical (PEC)-type devices provide promising ways for harvesting solar energy and converting it to electric and chemical energy with a low-cost and simple manufacturing process. However, the high light absorption, fast carrier separation, and low carrier recombination are still great challenges in reaching high performance for PEC devices. As emergent two-dimensional (2D) materials, Sb₂Se₃ and Sb₂S₃ exhibit desirable photoelectric properties due to the narrow bandgap, large optical absorption, and high carrier mobility. Herein, Sb₂S₃/Sb₂Se₃ heterojunction is synthesized by a two-step physical vapor deposition method. The type-II Sb₂S₃/Sb₂Se₃ heterojunction displays excellentphotoelectric properties such as a high photocurrent density (I_ph ∼ 162 µA cm^-2), a high photoresponsivity (R_ph ∼ 3700 µA W^-1), and a fast time response speed (rising time ∼ 2 ms and falling time ∼ 4.5 ms) even in harsh environment (H₂SO₄ electrolyte). Especially, the Sb₂S₃/Sb₂Se₃ shows an excellent self-powered photoresponse (I_ph ∼ 40 µA cm^-2, R_ph ∼ 850 µA W^-1). This increment is attributed to the improvement in light absorption, charge separation, and charge transfer efficiency. Taking these advantages, the Sb₂S₃/Sb₂Se₃ heterojunction also exhibits higher PEC water splitting synergically, which is approximately 3 times larger than that of Sb₂Se₃ and Sb₂S₃. These results pave the way for high-performance PEC devices by integrating 2D narrow bandgap semiconductors.

NixP and Mn3O4 dual co-catalysts separately deposited on a g-C3N4/red phosphorus hybrid photocatalyst for an efficient hydrogen evolution

Through a two-step photo-deposition, reductive and oxidative non-noble co-catalysts separately deposited and facilitated a HER enhancement of 12.4.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

Molecular Engineering of Photocathodes based on Polythiophene Organic Semiconductors for Photoelectrochemical Hydrogen Generation

Organic semiconductors provide significant potentials for the construction of photoelectrochemical (PEC) cells for solar hydrogen production because of their highly tunable properties. Herein, on carbon fiber paper (CFP) surface, pyridyl (Py), and 4,4'-bipyridin-1-ium (Py₂⁺) groups were introduced into polythiophene (pTH) semiconductor by electrochemical copolymerization, respectively. After assembly with the Co(dmgBF₂)₂ type catalyst (CoB, dmgBF₂ = difluoroboryldimethylglyoximate), the CoB@Py₂⁺-pTH/CFP photocathode displayed nearly twice the photocurrent enhancement (550 μA cm^-2 at 0.15 V vs reversible hydrogen electrode, RHE) comparing to that generated by the CoB@Py-pTH/CFP photocathode (290 μA cm^-2 at 0.15 V vs RHE) for light-driven H₂ generation under AM 1.5 solar illumination. Investigation of the mechanism revealed that the introduction of the positively charged pyridinium groups could improve the intrinsic Co(dmgBF₂)₂ catalyst activity for the H₂ generation reaction. Meanwhile, the positively charged pyridinium groups serve as p-type dopants to increase the semiconductor bulk charge transfer rate and act as electron transfer mediators to promote the interfacial charge transfer kinetics between the catalyst and the pTH-based organic semiconductor.

Synthesizing the High Surface Area g-C3N4 for Greatly Enhanced Hydrogen Production

Adjusting the structure of g-C3N4 to significantly enhance its photocatalytic activity has attracted considerable attention. Herein, a novel, sponge-like g-C3N4 with a porous structure is prepared from the annealing of protonated melamine under N2/H2 atmosphere (PH-CN). Compared to bulk g-C3N4 via calcination of melamine under ambient atmosphere (B-CN), PH-CN displays thinner nanosheets and a higher surface area (150.1 m2/g), which is a benefit for shortening the diffusion distance of photoinduced carriers, providing more active sites, and finally favoring the enhancement of the photocatalytic activity. Moreover, it can be clearly observed from the UV-vis spectrum that PH-CN displays better performance for harvesting light compared to B-CN. Additionally, the PH-CN is prepared with a larger band gap of 2.88 eV with the Fermi level and conduction band potential increased and valence band potential decreased, which could promote the water redox reaction. The application experiment results show that the hydrogen evolution rate on PH-CN was nearly 10 times higher than that of B-CN, which was roughly 4104 μmol h−1 g−1. The method shown in this work provides an effective approach to adjust the structure of g-C3N4 with considerable photocatalytic hydrogen evolution activity.

A Novel Thermochemical Metal Halide Treatment for High-Performance Sb2Se3 Photocathodes

The fabrication of cost-effective photostable materials with optoelectronic properties suitable for commercial photoelectrochemical (PEC) water splitting represents a complex task. Herein, we present a simple route to produce Sb₂Se₃ that meets most of the requirements for high-performance photocathodes. Annealing of Sb₂Se₃ layers in a selenium-containing atmosphere persists as a necessary step for improving device parameters; however, it could complicate industrial processability. To develop a safe and scalable alternative to the selenium physical post-processing, we propose a novel SbCl₃/glycerol-based thermochemical treatment for controlling anisotropy, a severe problem for Sb₂Se₃. Our procedure makes it possible to selectively etch antimony-rich oxyselenide presented in Sb₂Se₃, to obtain high-quality compact thin films with a favorable morphology, stoichiometric composition, and crystallographic orientation. The treated Sb₂Se₃ photoelectrode demonstrates a record photocurrent density of about 31 mA cm^-2 at -248 mV against the calomel electrode and can thus offer a breakthrough option for industrial solar fuel fabrication.

Efficient photocatalytic hydrogen evolution on single-crystalline metal selenide particles with suitable cocatalysts

It is important to improve the apparent quantum yields (AQYs) of narrow bandgap photocatalysts to achieve efficient H₂ production. The present work demonstrates a particulate solid solution of zinc selenide and copper gallium selenide (denoted as ZnSe:CGSe) that evolves H₂ efficiently and is responsive to visible light up to 725 nm. This material was synthesized using a flux-assisted method and was found to comprise single-crystalline tetrahedral particles. The coloading of Ni and Rh, Pt, Pd or Ru as cocatalysts further improved the photocatalytic H₂ evolution rate over this photocatalyst. With the optimal coloading of a Ni–Ru composite cocatalyst, an AQY of 13.7% was obtained at 420 nm during a sacrificial H₂ evolution reaction, representing the highest value yet reported for a photocatalyst with an absorption edge longer than 700 nm. The present study demonstrates that the preparation of single-crystalline particles and the rational assembly of composite cocatalysts are effective strategies that allow the efficient utilization of long wavelengths by metal selenide photocatalysts for solar fuel production.

Coloading of a Ni–Ru composite cocatalyst on a 700 nm-class single-crystalline particulate selenide photocatalyst improves its hydrogen evolution activity.

A highly [001]-textured Sb2Se3 photocathode for efficient photoelectrochemical water reduction

Anisotropic Sb₂Se₃ is an emerging earth-abundant photocathode for photoelectrochemical water splitting. However, controlling the growth of the Sb₂Se₃ film with optimal [001] crystallographic orientation is still the most challenging issue. Here, we successfully synthesized [001]-oriented Sb₂Se₃via a reliable and facile method. The [001]-oriented Sb₂Se₃ film could provide an excellent carrier-migration efficiency. Consequently, we achieved a record-high photocurrent density of -20.2 mA cm^-2 at 0 V_RHE and a very high half-cell solar-to-hydrogen efficiency of 1.36% under 1-sun simulated solar illumination in a TiO₂/[001]-Sb₂Se₃ photocathode. This work provides an effective strategy and important guidelines for rationally designing optoelectronic devices based on the [001]-oriented Sb₂Se₃ film.

An aqueous solution method towards Sb2S3 thin films for photoanodes

An aqueous solution approach, integrating atomic layer deposition and chemical vapor deposition, is proposed to grow a high-quality Sb2S3 thin film. The Sb2S3 thin film is uniform and dense with a bandgap of 1.78 eV. The photocurrent density of the Sb2S3 sensitized TiO2 array electrode is 40 μA cm-2, which is nearly 25 and 93 times than that of TiO2 and Sb2S3 photoanodes, respectively.

Recent Advances in Earth-Abundant Photocathodes for Photoelectrochemical Water Splitting

The conversion of solar energy into hydrogen through photoelectrochemical (PEC) water splitting is an attractive way to store renewable energy. Despite the intriguing concept of solar hydrogen production, efficient PEC devices based on earth-abundant semiconductors should be realized to compete economically with conventional steam reforming processes. Herein, recent milestones in photocathode development for PEC water splitting, particularly in earth-abundant semiconductors, in terms of new techniques for enhancing performance, as well as theoretical aspects, are highlighted. In addition, recent research into newly emerging low-cost p-type semiconductors in the PEC field, such as Cu₂ BaSn(S,Se)₄ and Sb₂ Se₃ , are scrutinized and the advantages and disadvantages of each material assessed.

Controlled Growth of an Mo₂C-Graphene Hybrid Film as an Electrode in Self-Powered Two-Sided Mo₂C-Graphene/Sb₂S0.42Se2.58/TiO₂ Photodetectors

The monotonic work function of graphene makes it difficult to meet the electrode requirements of every device with different band structures. Two-dimensional (2D) transition metal carbides (TMCs), such as carbides in MXene, are considered good candidates for electrodes as a complement to graphene. Carbides in MXene have been used to make electrodes for use in devices such as lithium batteries. However, the small lateral size and thermal instability of carbides in MXene, synthesized by the chemically etching method, limit its application in optoelectronic devices. The chemical vapor deposition (CVD) method provides a new way to obtain high-quality ultrathin TMCs without functional groups. However, the TMCs film prepared by the CVD method tends to grow vertically during the growth process, which is disadvantageous for its application in the transparent electrode. Herein, we prepared an ultrathin Mo₂C—graphene (Mo₂C—Gr) hybrid film by CVD to solve the above problem. The work function of Mo₂C—Gr is between that of graphene and a pure Mo₂C film. The Mo₂C—Gr hybrid film was selected as a transparent hole-transporting layer to fabricate novel Mo₂C—Gr/Sb₂S_0.42Se_2.58/TiO₂ two-sided photodetectors. The Mo₂C—Gr/Sb₂S_0.42Se_2.58/TiO₂/fluorine-doped tin oxide (FTO) device could detect light from both the FTO side and the Mo₂C—Gr side. The device could realize a short response time (0.084 ms) and recovery time (0.100 ms). This work is believed to provide a powerful method for preparing Mo₂C—graphene hybrid films and reveals its potential applications in optoelectronic devices.

Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb₂ Se₃ nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb₂ Se₃ NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb₂ Se₃ NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb₂ Se₃ NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb₂ Se₃ NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W^-1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb₂ Se₃ NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb₂ Se₃ NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.

Carbon Nitride Materials for Water Splitting Photoelectrochemical Cells

Graphitic carbon nitride materials (CNs) have emerged as suitable photocatalysts and heterogeneous catalysts for various reactions thanks to their tunable band gap, suitable energy-band position, high stability under harsh chemical conditions, and low cost. However, the utilization of CN in photoelectrochemical (PEC) and photoelectronic devices is still at an early stage owing to the difficulties in depositing high-quality and homogenous CN layer on substrates, its wide band gap, poor charge-separation efficiency, and low electronic conductivity. In this Minireview, we discuss the synthetic pathways for the preparation of various structures of CN on substrates and their underlying photophysical properties and current photoelectrochemical performance. The main challenges for CN incorporation into PEC cell are described, together with possible routes to overcome the standing limitations toward the integration of CN materials in PEC and other photoelectronic devices.

Regulating the Silicon/Hematite Microwire Photoanode by the Conformal Al2O3 Intermediate Layer for Water Splitting

Dual-absorber photoelectrodes have been proved to possess greater potential than the single-absorber systems in the applications of photoelectrochemical (PEC) cells (e.g., solar-driven water splitting); however, the mismatching of the energy bands and substantial carrier recombinations at the two absorber interfaces are normally subsistent. Here, we introduce an intermediate layer of conformal Al₂O₃ into the silicon/hematite (Si/α-Fe₂O₃) microwire photoanode for enriching the understanding of the interaction among the interlayer, inner absorber, and outer absorber. Our results show that the Si/Al₂O₃/α-Fe₂O₃ microwire photoanode with the thickness-optimized Al₂O₃ can lead to a substantial increase in the photocurrent from 0.83 to 2.08 mA/cm² at 1.23 V_RHE (under 1 sun irradiation) and an obvious decrease in the onset potential relative to the counterpart without Al₂O₃. By analyzing the PEC responses under various monochromatic lights, PEC impedance spectroscopy, and intensity-modulated photocurrent spectroscopy, we ascribe the improvements to the fact that the suitable-thickness Al₂O₃ can passivate the Si microwire surfaces and the bottom surfaces of the α-Fe₂O₃ film and give rise to Al doping into the post-synthesized α-Fe₂O₃. These essential causes promote the carrier separation in α-Fe₂O₃, diminish the photoanode surface recombination rate, and then increase the surface charge-transfer efficiency.

Improvement in Sb2Se3 Solar Cell Efficiency through Band Alignment Engineering at the Buffer/Absorber Interface

Energy band alignment plays an important role in heterojunction thin-film solar cells. In this work, we report the application of ternary Cd _xZn_{1- x}S buffer layers in antimony selenide (Sb₂Se₃) thin-film solar cells. The results of our study revealed that the Cd/Zn element ratios not only affected the optical band gap of Cd _xZn_{1- x}S buffers but also modified the band alignment at the junction interface. A Sb₂Se₃ solar cell with an optimal conduction-band offset value (0.34 eV) exhibited an efficiency of 6.71%, which represents a relative 32.1% enhancement as compared to the reference CdS/Sb₂Se₃ solar cell. The results further indicated that a "spike"-like band structure suppressed the recombination rate at the interface and hence increased the device open-circuit voltage and fill factor. Electrochemical impedance spectroscopy analysis exhibited that the Cd _xZn_{1- x}S/Sb₂Se₃ solar cell had higher recombination resistance and longer carrier lifetime than the CdS/Sb₂Se₃ device.

Interstitial N-doped SrSnO3 perovskite: structural design, modification and photocatalytic degradation of dyes

An easy-to-manipulate, two-step, solid-state synthetic method was adopted to incorporate N element into the SrSnO₃ perovskite for structural modification, which improved its photocatalytic performance.

Strategies for enhancing the photocurrent, photovoltage, and stability of photoelectrodes for photoelectrochemical water splitting

In this review, we survey recent strategies for photoelectrode optimization and advanced characterization methods towards efficient water splitting cells via feedback from these characterization methods.

Ultrahigh position sensitivity and fast optical relaxation time of lateral photovoltaic effect in Sb2Se3/p-Si junctions

A large lateral photovoltaic (LPV) effect with good linearity and fast response time is necessary for developing high-performance position-sensitive detectors (PSD). In this paper, we investigated the influence of the resistance of Sb₂Se₃ film and the Si on the LPV properties of the Sb₂Se₃/p-Si junctions. The LPV exhibits a linear dependence on the laser spot position, with a maximum position sensitivity as high as 448 mV/mm. The optical relaxation time of the LPV was about 4.98 μs, which was due to the formation of the inversion layer at the Sb₂Se₃/p-Si interface. Our results revealed that the high resistivity of Sb₂Se₃ film facilitate the LPV and confirmed the resistivity of Si substrate play a key role in the LPV properties. The giant position sensitivity and fast relaxation times of the LPV suggest that the Sb₂Se₃/p-Si junction is a promising candidate for a wide range of optoelectronic device applications.

Direct Z scheme-fashioned photoanode systems consisting of Fe2O3 nanorod arrays and underlying thin Sb2Se3 layers toward enhanced photoelectrochemical water splitting performance

An elegant Z-scheme-fashioned photoanode consisting of Fe2O3 nanorod arrays and underlying thin Sb2Se3 layers was rationally constructed. The photocurrent density of the Sb2Se3-Fe2O3 Z-scheme photoanode reached 3.07 mA cm-2 at 1.23 V vs. RHE, three times higher than that of pristine Fe2O3 at 1.03 mA cm-2. An obvious cathodic shift of the photocurrent onset potential of about 200 mV was also observed. The transient photovoltage response demonstrates that the suitable band edges (ECB ∼ -0.4 eV and EVB ∼ 0.8 eV) of Sb2Se3, match well with Fe2O3 (ECB ∼ 0.29 eV and EVB ∼ 2.65 eV), permitting the photoexcited electrons on the conduction band of the Fe2O3 to transfer to the valence band of Sb2Se3, and recombine with the holes therein, thus allowing a high concentration of holes to collect in the Fe2O3 for water oxidation. The transient absorption spectra further corroborate that the built-in electric field in the p-n heterojunction leads to a more effective separation and a longer lifetime of the charge carriers.

Time-Resolved Observations of Photo-Generated Charge-Carrier Dynamics in Sb2Se3 Photocathodes for Photoelectrochemical Water Splitting

Solar-energy conversion by photoelectrochemical (PEC) devices is driven by the separation and transfer of photogenerated charge carriers. Thus, understanding carrier dynamics in a PEC device is essential to realizing efficient solar-energy conversion. Here, we investigate time-resolved carrier dynamics in emerging low-cost Sb₂Se₃ nanostructure photocathodes for PEC water splitting. Using terahertz spectroscopy, we observed an initial mobility loss within tens of picoseconds due to carrier localization and attributed the origin of carrier localization to the rich surface of Sb₂Se₃ nanostructures. In addition, a possible recombination at the interface between Sb₂Se₃ and the back contact is elucidated by time-resolved photoluminescence analysis. We also demonstrated the dual role of the RuO _x co-catalyst in reducing surface recombination and enhancing charge transfer in full devices using intensity-modulated spectroscopy. The relatively low onset potential of the Sb₂Se₃ photocathode is attributed to the sluggish charge transfer at a low applied bias rather than to fast surface recombination. We believe that our insights on carrier dynamics would be an important step toward achieving highly efficient Sb₂Se₃ photocathodes.

Controlled Electrodeposition of Photoelectrochemically Active Amorphous MoS x Cocatalyst on Sb2Se3 Photocathode

Amorphous molybdenum sulfide (a-MoS _x) is a promising hydrogen evolution catalyst owing to its low cost and high activity. A simple electrodeposition method (cyclic voltammetry) allows uniform formation of a-MoS _x films on conductive surfaces. However, the morphology of a-MoS _x deposited on a TiO₂/Sb₂Se₃ photocathode could be modulated by varying the starting potential. The cathodically initiated a-MoS _x showed conformal filmlike morphology, whereas anodic initiation induced inhomogeneous particulate deposition. The filmlike morphology of a-MoS _x was subjected to catalyst activation, which improved the photocurrent density and reduced the charge-transfer resistance at the semiconductor/electrolyte interface, as compared to that of its particulate counterpart. X-ray photoelectron spectroscopy confirmed that different chemical states of a-MoS _x (photoelectrochemically active sites) were developed on the basis of the electrodeposited a-MoS _x morphology. The research provides an effective approach for uniformly depositing cost-effective a-MoS _x on nanostructured photoelectrodes, for photoelectrochemical water splitting.