1
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Xiao J, Zhai Q, Luo J. Solid-phase transient soldering method based on Au/Ni-W multilayer thin-film-modified copper-based structures. Heliyon 2024; 10:e33071. [PMID: 38988553 PMCID: PMC11234102 DOI: 10.1016/j.heliyon.2024.e33071] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2024] [Revised: 06/11/2024] [Accepted: 06/13/2024] [Indexed: 07/12/2024] Open
Abstract
The copper crystal cone-shaped micro-nanostructure is used as the substrate, and the Ni-W alloy layer and Au nanolayer are plated sequentially. Instantaneous soldering with lead-free solder is realized under ultrasonic assistance at room temperature. This solves the residual stress and thermal damage caused by high melting point lead-free solder on thin chips and thermal components, and ensures the safety and reliability of electronic components. Copper-based microstructures are deposited by electrochemical methods. An amorphous Ni-W alloy layer with a thickness of 180 nm is deposited on the Cu-based microstructures by adjusting the atomic ratio of the plating solution. The Ni-W layer is further coated with a 50 nm Au layer to prevent oxidation. Solid-phase transient soldering is realized by combining the Au/Ni-W multilayer thin-film-modified Cu substructures with commercial solder (SAC305) for a holding time of 3 s at a soldering pressure of 10,000 gf (20 MPa) while ultrasonically assisted. The soldered samples are aged at 180 °C for 10 min, 30 min, and 60 min, respectively. Copper substructures with different surface modifications are subjected to destructive shear experiments with solder balls. Scanning electron microscope and X-ray fluorescence thickness gauge are used to study the microstructure, intermetallic compound (IMC) composition thickness and properties of the soldered interface and section. The cone height of the Cu-based structure is 2-4 μm, and the diameter of the bottom is 800 nm-1200 nm, which has a sharp tip and an excellent L/D ratio. The interface between the Au/Ni-W modified Cu substructure and the solder ball is almost free of holes. The average shear strength at the soldering interface is about 43.06 MPa. The fracture surface after the shear experiment basically occurs inside the solder ball matrix, which belongs to the pure toughness fracture. The interface between the Au/Ni-W-modified Cu-based structure and the solder ball is subjected to long aging treatment at 180 °C. The soldering interface showed a "bright layer". New phases are generated on the solder side above the "bright layer", while no new phases appear on the Cu substructure side below the "bright layer". The copper-based microstructure is inserted into the inside of the solder ball to form an inlay and produce mechanical interlocking. Au/Ni-W alloy modification layer can effectively improve the surface hardness of copper-based structures. This creates a large hardness difference with soft solder and enables the formation of fewer holes in the insertion solder. Amorphous Ni-W alloys are prone to form dense oxide films during ultrasonication. The Au film modification prevents oxide generation and increases the average shear strength of the soldering interface. The Ni-W alloy layer retards the interdiffusion between Cu-Sn, blocks the excessive growth of Cu-Sn IMCs, and reduces the reliability problems caused by interface failure.
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Affiliation(s)
- Jin Xiao
- School of Mechanical and Electrical Engineering, Guangzhou Huali College, Guangzhou 511300, China
- School of Intelligent Manufacturing and Materials Engineering, Gannan University of science and technology, Ganzhou 341000, China
| | - Qian Zhai
- School of Mechanical and Electrical Engineering, Guangzhou Huali College, Guangzhou 511300, China
| | - Jia Luo
- School of Intelligent Manufacturing and Materials Engineering, Gannan University of science and technology, Ganzhou 341000, China
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2
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Xiao J, Zhai Q, Cheng W. Low temperature soldering technology based on superhydrophobic copper microlayer. Heliyon 2024; 10:e28393. [PMID: 38560103 PMCID: PMC10979162 DOI: 10.1016/j.heliyon.2024.e28393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Revised: 02/29/2024] [Accepted: 03/18/2024] [Indexed: 04/04/2024] Open
Abstract
Cu-Cu soldering is realized under certain pressure and low temperature conditions by using a surface silver film to modify the copper microlayer structure, thus solving the problems of high thermal stress and signal delay aggravation caused by high temperature in the traditional reflow soldering process. The copper microlayer modified with silver film is obtained by electrodeposition. The surface substructure of the Cu microlayer is a nano cone-shaped protrusion. The diameter of the bottom of the cone is 500 nm∼1 μm, and the height of the cone is 1∼2 μm. The thickness of the silver film is about 320 nm, and the modification of the copper layer with silver film can effectively prevent the oxidation of the copper layer. Two silver-modified copper microlayers are placed in face-to-face contact as a soldering couple. A certain pressure and low temperature are applied to the contact area to realize the soldering and interconnection. The morphology of the soldered interface and the average shear strength of the soldered joints are analyzed by scanning electron microscopy, transmission electron microscopy and solder joint tester. It is found that under the optimal soldering parameters of soldering temperature 220 °C, soldering pressure 20 MPa and soldering time 20 min, the nano-conical projections of the Cu micrometer layer are inserted into each other to produce a physical blocking effect. The highly surface-meltable silver film effectively connects the surrounding copper layer as an intermediate buffer layer. The average shear strength of soldering joints is significantly increased. Heat treatment experiments have shown that the average shear strength can be effectively increased by heat treatment for an appropriate period of time. Prolonged exposure to heat has little effect on the average shear strength. With the special morphology of the copper microlayer structure and the nano-size effect of the silver layer, soldering can be done at low temperatures. The quality of the soldering interface is good and small soldering dimensions can be obtained.
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Affiliation(s)
- Jin Xiao
- School of Mechanical and Electrical Engineering, Guangzhou Huali College, Guangzhou, 511300, PR China
- School of Advanced Manufacturing, Guangdong Songshan Polytechnic College, Shaoguan, 512126, PR China
| | - Qian Zhai
- School of Mechanical and Electrical Engineering, Guangzhou Huali College, Guangzhou, 511300, PR China
| | - Wei Cheng
- School of Intelligent Equipment Manufacturing, Zhongshan Torch Polytechnic, Zhongshan, 528436, PR China
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3
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Schätz J, Nayi N, Weber J, Metzke C, Lukas S, Walter J, Schaffus T, Streb F, Reato E, Piacentini A, Grundmann A, Kalisch H, Heuken M, Vescan A, Pindl S, Lemme MC. Button shear testing for adhesion measurements of 2D materials. Nat Commun 2024; 15:2430. [PMID: 38499534 PMCID: PMC10948857 DOI: 10.1038/s41467-024-46136-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2023] [Accepted: 02/15/2024] [Indexed: 03/20/2024] Open
Abstract
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.
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Affiliation(s)
- Josef Schätz
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Navin Nayi
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Jonas Weber
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany
- Department of Applied Physics, University of Barcelona, Martí i Franquès 1, 08028, Barcelona, Spain
| | - Christoph Metzke
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany
- Department of Electrical Engineering, Helmut Schmidt University/University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043, Hamburg, Germany
| | - Sebastian Lukas
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Jürgen Walter
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Tim Schaffus
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Fabian Streb
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Eros Reato
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Agata Piacentini
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Annika Grundmann
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Holger Kalisch
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Michael Heuken
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
- AIXTRON SE, Dornkaulstr. 2, 52134, Herzogenrath, Germany
| | - Andrei Vescan
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Stephan Pindl
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Max C Lemme
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
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Gao H, Wang Z, Yang F, Wang X, Wang S, Zhang Q, Liu X, Sun Y, Kong J, Yao J. Graphene-integrated mesh electronics with converged multifunctionality for tracking multimodal excitation-contraction dynamics in cardiac microtissues. Nat Commun 2024; 15:2321. [PMID: 38485708 PMCID: PMC10940632 DOI: 10.1038/s41467-024-46636-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Accepted: 03/05/2024] [Indexed: 03/18/2024] Open
Abstract
Cardiac microtissues provide a promising platform for disease modeling and developmental studies, which require the close monitoring of the multimodal excitation-contraction dynamics. However, no existing assessing tool can track these multimodal dynamics across the live tissue. We develop a tissue-like mesh bioelectronic system to track these multimodal dynamics. The mesh system has tissue-level softness and cell-level dimensions to enable stable embedment in the tissue. It is integrated with an array of graphene sensors, which uniquely converges both bioelectrical and biomechanical sensing functionalities in one device. The system achieves stable tracking of the excitation-contraction dynamics across the tissue and throughout the developmental process, offering comprehensive assessments for tissue maturation, drug effects, and disease modeling. It holds the promise to provide more accurate quantification of the functional, developmental, and pathophysiological states in cardiac tissues, creating an instrumental tool for improving tissue engineering and studies.
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Affiliation(s)
- Hongyan Gao
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Zhien Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Feiyu Yang
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Xiaoyu Wang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Siqi Wang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Quan Zhang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Xiaomeng Liu
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Yubing Sun
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, MA, 01003, USA
- Institute for Applied Life Sciences, University of Massachusetts, Amherst, MA, 01003, USA
- Department of Biomedical Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jun Yao
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA.
- Institute for Applied Life Sciences, University of Massachusetts, Amherst, MA, 01003, USA.
- Department of Biomedical Engineering, University of Massachusetts, Amherst, MA, 01003, USA.
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5
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Cline C, Wang H, Kong J, Li T, Liu J, Wegst UGK. Heterogeneous Ice Nucleation Studied with Single-Layer Graphene. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:15121-15131. [PMID: 36448835 DOI: 10.1021/acs.langmuir.2c02144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Control of heterogeneous ice nucleation (HIN) is critical for applications that range from iceophobic surfaces to ice-templated materials. HIN on 2D materials is a particular interesting topic that still lacks extensive experimental investigations. Here, we focus on the HIN on single-layer graphene (SLG) transferred onto different substrates, including silicon, silica, and thermal oxide on silicon. Complemented by other samples without SLG, we obtain a large range of wetting contact angles (WCAs) from 2° to 95°. All pristine SLG samples exhibit a large contact angle of ∼95°, which is close to the theoretical value of 96° for free-standing SLG, irrespective of the substrate and even in the presence of nanoscale wrinkles on SLG, which are due to the transfer process, indicating that the topographical features have little impact on the wetting behavior. Interestingly, SLG displays changes in hydrophobicity upon repeated water droplet freezing-melting-drying cycles due to a shift in Fermi level and/or enhanced water-substrate polar molecular interactions, likely induced by residual adsorption of H2O molecules. We found that a 0.04 eV decrease in SLG Fermi level reduces the SLG/water interface energy by ∼6 mJ/m2, thereby making SLG less hydrophobic. Counterintuitively, the reduction in SLG/water interface energy and the enhanced hydrophilicity after repeated freezing-melting-evaporation cycles actually decreases the freezing temperature by ∼3-4 °C, thereby slightly retarding rather than enhancing HIN. We also found that the water droplet freezing temperature differed by only ∼1 °C on different substrates with WCAs from 2° to 95°, an intriguing and yet reasonable result that confirms that wettability alone is not a good indicator of HIN capability. The HIN rate is rather determined by the difference between substrate/water and substrate/ice interface energies, which was found to stay almost constant for substrates weakly interacting with water/ice via van der Waals or hydrogen bonds, irrespective of hydrophilicity.
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Affiliation(s)
- Cory Cline
- Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, United States
| | - Haozhe Wang
- Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Boston, Massachusetts 02139, United States
| | - Jing Kong
- Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Boston, Massachusetts 02139, United States
| | - Tianshu Li
- Department of Civil and Environmental Engineering, George Washington University, Washington, D.C. 20052, United States
| | - Jifeng Liu
- Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, United States
| | - Ulrike G K Wegst
- Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, United States
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
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6
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Mao J, Wu Z, Guo F, Hao J. Strain-Induced Performance Enhancement of a Monolayer Photodetector via Patterned Substrate Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36052-36059. [PMID: 35912816 DOI: 10.1021/acsami.2c09632] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) materials exhibit tremendous potential for applications in next-generation photodetectors. Currently, approaches aiming at enhancing the device's performance are limited, mainly relying on complex hybrid systems such as heterostructures and sensitization. Here, we propose a new strategy by constructing patterned nanostructures compatible with the conventional silicon substrate. Using CVD-grown monolayer MoS2 on the periodical nanocone arrays, we demonstrate a high-performance MoS2 photodetector via manipulating strain distribution engineered by the substrate at the nanoscale. Compared to the pristine MoS2 counterpart, the strained MoS2 photodetector exhibits a much enhanced performance, including a high signal-to-noise ratio over 105 and large responsivity of 3.2 × 104 A W-1. The physical mechanism responsible for the enhancement is discussed by combining Kelvin probe force microscopy with theoretical simulation. The enhanced performances can be attributed to the improved light absorption, the fast separation of photo-excited carriers, and the suppression of dark currents induced by the designed periodical nanocone arrays. This work depicts an alternative method to achieve high-performance optoelectronic devices based on 2D materials integrated with semiconductor circuits.
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Affiliation(s)
- Jianfeng Mao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
| | - Zehan Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
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7
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Song X, Chen M, Zhang J, Zhang R, Zhang W. Study on Nanoporous Graphene-Based Hybrid Architecture for Surface Bonding. NANOMATERIALS 2022; 12:nano12142483. [PMID: 35889707 PMCID: PMC9321683 DOI: 10.3390/nano12142483] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Revised: 07/09/2022] [Accepted: 07/10/2022] [Indexed: 01/25/2023]
Abstract
Graphene-copper nanolayered composites have received research interest as promising packaging materials in developing next-generation electronic and optoelectronic devices. The weak van der Waal (vdW) contact between graphene and metal matrix significantly reduces the mechanical performance of such composites. The current study describes a new Cu-nanoporous graphene-Cu based bonding method with a low bonding temperature and good dependability. The deposition of copper atoms onto nanoporous graphene can help to generate nanoislands on the graphene surface, facilitating atomic diffusion bonding to bulk copper bonding surfaces at low temperatures, according to our extensive molecular dynamics (MD) simulations on the bonding process and pull-out verification using the canonical ensemble (NVT). Furthermore, the interfacial mechanical characteristics of graphene/Cu nanocomposites can be greatly improved by the resistance of nanostructure in nanoporous graphene. These findings are useful in designing advanced metallic surface bonding processes and graphene-based composites with tenable performance.
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Affiliation(s)
- Xiaohui Song
- Institute of Applied Physics, Henan Academy of Science, Zhengzhou 450008, China;
- Correspondence:
| | - Mingxiang Chen
- School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Jingshuang Zhang
- School of Mechanical Engineering, Zhengzhou University, Zhengzhou 450001, China; (J.Z.); (R.Z.)
| | - Rui Zhang
- School of Mechanical Engineering, Zhengzhou University, Zhengzhou 450001, China; (J.Z.); (R.Z.)
| | - Wei Zhang
- Institute of Applied Physics, Henan Academy of Science, Zhengzhou 450008, China;
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8
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Liu M, Wang L, Yu G. Developing Graphene-Based Moiré Heterostructures for Twistronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103170. [PMID: 34723434 PMCID: PMC8728823 DOI: 10.1002/advs.202103170] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.
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Affiliation(s)
- Mengya Liu
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Liping Wang
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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9
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Song X, Wu S, Zhang R. Computational Study on Surface Bonding Based on Nanocone Arrays. NANOMATERIALS 2021; 11:nano11061369. [PMID: 34064263 PMCID: PMC8224335 DOI: 10.3390/nano11061369] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 05/18/2021] [Accepted: 05/19/2021] [Indexed: 12/29/2022]
Abstract
Surface bonding is an essential step in device manufacturing and assembly, providing mechanical support, heat transfer, and electrical integration. Molecular dynamics simulations of surface bonding and debonding failure of copper nanocones are conducted to investigate the underlying adhesive mechanism of nanocones and the effects of separation distance, contact length, temperature, and size of the cones. It is found that van der Waals interactions and surface atom diffusion simultaneously contribute to bonding strength, and different adhesive mechanisms play a main role in different regimes. The results reveal that increasing contact length and decreasing separation distance can simultaneously contribute to increasing bonding strength. Furthermore, our simulations indicate that a higher temperature promotes diffusion across the interface so that subsequent cooling results in better adhesion when compared with cold bonding at the same lower temperature. It also reveals that maximum bonding strength was obtained when the cone angle was around 53°. These findings are useful in designing advanced metallic bonding processes at low temperatures and pressure with tenable performance.
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Affiliation(s)
- Xiaohui Song
- School of Mechanical Engineering, Zhengzhou University, Zhengzhou 450001, China;
- Institute of Applied Physics, Henan Academy of Sciences, Zhengzhou 450008, China;
| | - Shunli Wu
- Institute of Applied Physics, Henan Academy of Sciences, Zhengzhou 450008, China;
| | - Rui Zhang
- School of Mechanical Engineering, Zhengzhou University, Zhengzhou 450001, China;
- Correspondence:
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10
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Yu X, Fu S, Song Y, Wang H, Wang X, Kong J, Liu J. Color Contrast of Single-Layer Graphene under White Light Illumination Induced by Broadband Photon Management. ACS APPLIED MATERIALS & INTERFACES 2020; 12:3827-3835. [PMID: 31875675 DOI: 10.1021/acsami.9b16149] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Visualizing and manipulating the optical contrast of single-layer graphene (SLG) and other 2D materials has continuously been an interesting topic to understand fundamental light-matter interaction down to atomic thickness. Because the optical properties of SLG can be tuned by gating, demonstrating and manipulating the color contrast of SLG also has significant potential applications in ultrathin flexible color display. However, previous demonstrations of optical contrast of SLG are mostly limited to reflection intensity contrast under monochromatic illumination using the interference effect. The reported spectral contrast in SLG has mostly been narrow-band or at resonant wavelengths, and it required precise thickness control and/or nanolithography that are hardly scalable to large enough area for display applications. In this paper, we demonstrate novel color contrast optical visibility of SLG under white light using broadband photon management induced by nanoneedle-structured SnOx (x ≤ 1) transparent conductive oxides (TCOs), which is scalable to large-area color display. The low-temperature fabricated, self-assembled, nanoneedle-structured SnOx (x ≤ 1) thin films help to significantly increase the broadband optical absorption in SLG by enhancing the electromagnetic field and increasing the scattering efficiency at the SnOx/SLG interface. With nanoneedle-structured SnOx, the optical absorption in SLG on a fused quartz (SiO2) substrate is drastically increased from ∼1.4 to >10% at λ = 560-990 nm (from yellow to near infrared spectral regimes), leading to a clear color contrast to the surrounding region without SLG. The self-assembly approach, rather than sophisticated and costly nanolithography, allows scalable fabrication of large area 2D photonic devices with a broadband and highly efficient photon management effect. Therefore, this approach can be further extended to color-tunable TCO/dielectric/SLG 2D photonic devices by adjusting the free carrier concentrations/Fermi levels in the TCO and SLG layers via gating-a stepping stone toward ultrathin flexible color display technologies utilizing 2D materials and nanostructured thin films.
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Affiliation(s)
- Xiaobai Yu
- Thayer School of Engineering , Dartmouth College , 14 Engineering Drive , Hanover , New Hampshire 03755 , United States
| | - Sidan Fu
- Thayer School of Engineering , Dartmouth College , 14 Engineering Drive , Hanover , New Hampshire 03755 , United States
| | - Yi Song
- Department of Electrical Engineering and Computer Science , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Xiaoxin Wang
- Thayer School of Engineering , Dartmouth College , 14 Engineering Drive , Hanover , New Hampshire 03755 , United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | - Jifeng Liu
- Thayer School of Engineering , Dartmouth College , 14 Engineering Drive , Hanover , New Hampshire 03755 , United States
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11
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Han Y, Fan X, Wang H, Zhao F, Tully CG, Kong J, Yao N, Yan N. High-yield monolayer graphene grids for near-atomic resolution cryoelectron microscopy. Proc Natl Acad Sci U S A 2020; 117:1009-1014. [PMID: 31879346 PMCID: PMC6969529 DOI: 10.1073/pnas.1919114117] [Citation(s) in RCA: 74] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023] Open
Abstract
Cryogenic electron microscopy (cryo-EM) has become one of the most powerful techniques to reveal the atomic structures and working mechanisms of biological macromolecules. New designs of the cryo-EM grids-aimed at preserving thin, uniform vitrified ice and improving protein adsorption-have been considered a promising approach to achieving higher resolution with the minimal amount of materials and data. Here, we describe a method for preparing graphene cryo-EM grids with up to 99% monolayer graphene coverage that allows for more than 70% grid squares for effective data acquisition with improved image quality and protein density. Using our graphene grids, we have achieved 2.6-Å resolution for streptavidin, with a molecular weight of 52 kDa, from 11,000 particles. Our graphene grids increase the density of examined soluble, membrane, and lipoproteins by at least 5-fold, affording the opportunity for structural investigation of challenging proteins which cannot be produced in large quantity. In addition, our method employs only simple tools that most structural biology laboratories can access. Moreover, this approach supports customized grid designs targeting specific proteins, owing to its broad compatibility with a variety of nanomaterials.
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Affiliation(s)
- Yimo Han
- Department of Molecular Biology, Princeton University, Princeton, NJ 08544;
| | - Xiao Fan
- Department of Molecular Biology, Princeton University, Princeton, NJ 08544
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Fang Zhao
- Department of Physics, Princeton University, Princeton, NJ 08544
| | | | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Nan Yao
- PRISM Imaging and Analysis Center, Princeton University, Princeton, NJ 08544
| | - Nieng Yan
- Department of Molecular Biology, Princeton University, Princeton, NJ 08544;
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Zhao Y, Liu X, Zhu J, Luo SN. Unusually high flexibility of graphene-Cu nanolayered composites under bending. Phys Chem Chem Phys 2019; 21:17393-17399. [PMID: 31359012 DOI: 10.1039/c9cp02980j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The mechanical properties of graphene-Cu nanolayered (GCuNL) composites under bend loading are investigated via an energy-based analytical model and molecular dynamics (MD) simulations. For an anisotropic material, if it has a weak strength in a certain direction, improving the mechanical properties along this direction is normally difficult for its composites. Here, we find that the flexibility of GCuNL composites can be improved considerably by graphene interfaces, despite graphene's small bending stiffness. The graphene interfaces can delocalize slip bands in the inner Cu layers of GCuNL composites, and impede local nucleation of dislocations, thus greatly increasing the yield and failure bend angles. As the thickness decreases, the flexibility of GCuNL nanofilms increases. However, the GCuNL nanofilms are thermodynamically unstable due to interface instability when the repeat layer spacing is less than 2 nm. The energy-based analytical model for large deformation can accurately characterize the bending response of GCuNL nanofilms.
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Affiliation(s)
- Yuxin Zhao
- College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064, P. R. China. and The Peac Institute of Multiscale Sciences, Chengdu, Sichuan 610031, P. R. China.
| | - Xiaoyi Liu
- The Peac Institute of Multiscale Sciences, Chengdu, Sichuan 610031, P. R. China.
| | - Jun Zhu
- College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064, P. R. China.
| | - Sheng-Nian Luo
- The Peac Institute of Multiscale Sciences, Chengdu, Sichuan 610031, P. R. China. and Key Laboratory of Advanced Technologies of Materials, Ministry of Education, and Institute of Materials Dynamics, Southwest Jiaotong University, Chengdu, Sichuan 610031, P. R. China
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13
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Feng B, Shen D, Wang W, Deng Z, Lin L, Ren H, Wu A, Zou G, Liu L, Zhou YN. Cooperative Bilayer of Lattice-Disordered Nanoparticles as Room-Temperature Sinterable Nanoarchitecture for Device Integrations. ACS APPLIED MATERIALS & INTERFACES 2019; 11:16972-16980. [PMID: 30945537 DOI: 10.1021/acsami.9b00307] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Decreasing the interconnecting temperature is essential for 3D and heterogeneous device integrations, which play indispensable roles in the coming era of "more than Moore". Although nanomaterials exhibit a decreased onset temperature for interconnecting, such an effect is always deeply impaired because of organic additives in practical integrations. Meanwhile, current organic-free integration strategies suffer from roughness and contaminants at the bonding interface. Herein, a novel bilayer nanoarchitecture simultaneously overcomes the drawbacks of organics and is highly tolerant to interfacial morphology, which exhibits universal applicability for device-level integrations at even room temperature, with the overall performance outperforming most counterparts reported. This nanoarchitecture features a loose nanoparticle layer with unprecedented deformability for interfacial gap-filling, and a compact one providing firm bonding with the component surface. The two distinct nanoparticle layers cooperatively enhance the interconnecting performance by 73-357%. Apart from the absence of organics, the internal abundant lattice disorders profoundly accelerate the interconnecting process, which is supported by experiments and molecular dynamics simulation. This nanoarchitecture is successfully demonstrated in diversified applications including paper-based light-emitting diodes, Cu-Cu micro-bonding, and SiC power modules. The strategy proposed here can open a new paradigm for device integrations and provide a fresh understanding on interconnecting mechanisms.
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Affiliation(s)
- Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Daozhi Shen
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Zhongyang Deng
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Luchan Lin
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Hui Ren
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Aiping Wu
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
| | - Y Norman Zhou
- Department of Mechanical Engineering, State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China
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14
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Kim SH, Yeon SM, Kim JH, Park SJ, Lee JE, Park SH, Choi JP, Aranas C, Son Y. Fine Microstructured In-Sn-Bi Solder for Adhesion on a Flexible PET Substrate: Its Effect on Superplasticity and Toughness. ACS APPLIED MATERIALS & INTERFACES 2019; 11:17090-17099. [PMID: 31021602 DOI: 10.1021/acsami.9b04159] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A novel In-Sn-Bi solder with a low electrical resistivity of 14.3 × 10-6 Ω cm and a melting temperature of 99.3 °C was produced for use in adhesive joining on a flexible poly(ethylene terephthalate) substrate. We determined that the fine microstructure of the In-based solder (which had an average phase size of 62.2 nm) strongly influenced its superplasticity and toughness at diffusive temperatures of 55-85 °C because the late-forming BiIn intermetallic compound (IMC) suppressed the growth of two other IMCs, In3Sn and In0.2Sn0.8, which formed earlier in the soldering process. Thus, an elongation of 858.3% and toughness of 36.0 MPa were obtained at a temperature of 85 °C and a strain rate of 0.0020 s-1. However, due to phase boundary fracturing, the phase-refined solder exhibited a slightly more brittle nature (with an elongation of 74.3%) at room temperature compared with a standard In-Sn solder consisting only of the In3Sn and In0.2Sn0.8 IMCs, which had a slightly larger phase size of 84.9 nm and higher ductility (with an elongation of 80.7%). In terms of superplastic deformation, the conventional fracture system based on the Hall-Petch effect transformed into phase boundary sliding at the solder operating temperature, significantly enhancing ductility.
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Affiliation(s)
- Sang Hoon Kim
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
| | - Si-Mo Yeon
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
| | - Jin Hak Kim
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
| | - Seong Je Park
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
| | - Ji Eun Lee
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
| | - Suk-Hee Park
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
| | - Joon-Phil Choi
- Department of Mining and Materials Engineering , McGill University , 3610 University Street , Montreal , Quebec H3A 0C5 , Canada
| | - Clodualdo Aranas
- Mechanical Engineering , University of New Brunswick , 15 Dineen Drive , Fredericton , New Brunswick E3B 5A3 , Canada
| | - Yong Son
- Digital Manufacturing Process Group , Korea Institute of Industrial Technology , 113-58 Seohaean-ro , Siheung-si , Gyeonggi-do 15014 , Republic of Korea
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15
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Wang T, Cai J, Wu Y, Hang T, Hu A, Ling H, Li M. Applicable Superamphiphobic Ni/Cu Surface with High Liquid Repellency Enabled by the Electrochemical-Deposited Dual-Scale Structure. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11106-11111. [PMID: 30855937 DOI: 10.1021/acsami.8b21331] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Until now, scalable fabrication and utilization of superamphiphobic surfaces based on sophisticated structures has remained challenging. Herein, we develop an applicable superamphiphobic surface with nano-Ni pyramid/micro-Cu cone structures prepared by cost-effective electrochemical deposition. More importantly, excellent dynamic wettability is achieved, exhibiting as ultralow sliding angle (∼0°), multiple droplets rebounding (13 times), and a total rejection. The supportive cushions trapped within the dual-scale micro/nanostructures is proved to be the key factor contributing to such high liquid repellency, whose existence is intuitively ascertained at both solid-air-liquid and water-solid-oil systems in this work. In addition, the enduring reliability of the wetting performance under various harsh conditions further endows the surface with broader application prospects.
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Affiliation(s)
- Tanyanyu Wang
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
| | - Junyan Cai
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
| | - Yunwen Wu
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
| | - Tao Hang
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
| | - Anmin Hu
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
| | - Huiqin Ling
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
| | - Ming Li
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering , Shanghai Jiao Tong University , No. 800 Dongchuan Road , Shanghai 200240 , China
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16
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Leong WS, Wang H, Yeo J, Martin-Martinez FJ, Zubair A, Shen PC, Mao Y, Palacios T, Buehler MJ, Hong JY, Kong J. Paraffin-enabled graphene transfer. Nat Commun 2019; 10:867. [PMID: 30787292 PMCID: PMC6382797 DOI: 10.1038/s41467-019-08813-x] [Citation(s) in RCA: 91] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2018] [Accepted: 01/27/2019] [Indexed: 11/21/2022] Open
Abstract
The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm2 V−1 s−1; electron mobility = 7438 cm2 V−1 s−1), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials. The transfer process of as-grown graphene limits its electrical performance and reliability. Here, the authors develop a transfer approach using paraffin as a support layer and obtain wrinkle-reduced and clean large-area graphene retaining high mobility.
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Affiliation(s)
- Wei Sun Leong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jingjie Yeo
- Department of Biomedical Engineering, Tufts University, Medford, MA, 02155, USA.,Laboratory for Atomistic and Molecular Mechanics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.,Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Francisco J Martin-Martinez
- Laboratory for Atomistic and Molecular Mechanics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Ahmad Zubair
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Pin-Chun Shen
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yunwei Mao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Tomas Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Markus J Buehler
- Laboratory for Atomistic and Molecular Mechanics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jin-Yong Hong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. .,Carbon Industry Frontier Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea.
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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