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Yan Q, Kar S, Chowdhury S, Bansil A. The Case for a Defect Genome Initiative. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303098. [PMID: 38195961 DOI: 10.1002/adma.202303098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 08/12/2023] [Indexed: 01/11/2024]
Abstract
The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.
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Affiliation(s)
- Qimin Yan
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USA
| | - Sugata Chowdhury
- Department of Physics and Astrophysics, Howard University, Washington, DC 20059, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
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Tan HJ, Zhang HH, Li XB, Xu Y, Wei XL, Yin WJ, Liu LM. Crucial Role of Crystal Field on Determining the Evolution Process of Janus MoSSe Monolayer: A First-Principles Study. J Phys Chem Lett 2022; 13:9287-9294. [PMID: 36173671 DOI: 10.1021/acs.jpclett.2c02454] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional Janus MXY materials have been successfully synthesized from their parent species by CVD, SEAR, or PLD techniques. However, their detailed evolution process and underlying atomistic mechanism are far from understood conclusively, which are prompts for further research. Here, taking Janus MoSSe as a representation, the evolution process from MoS2 is systematically investigated by first-principles calculation. The simulation shows that the lowest formation energy of MoS(2-δ)Seδ increases with selenylation ratio δ. Unexpectedly, Se atoms prefer to form a pair in next-nearest neighboring state (Se-NN-Se), eventually transferred into a growth rule of (6n + 1) during the evolution process. Particularly, it is demonstrated that the stability of the intermediate is mainly governed by the Mo 4d orbitals in different distorted triangular crystal fields, rendering a different degree of orbital splitting. Both the occupied and unoccupied Mo 4d orbitals of Se-NN-Se are farther from the Fermi level than other cases, which is clearly illustrated by d-band center theory. These findings will be helpful to understand the evolution process and the underlying atomistic mechanism of Janus MXY.
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Affiliation(s)
- Hua-Jian Tan
- School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
- Key Laboratory of Intelligent Sensors and Advanced Sensing Materials of Hunan Province, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Huan-Huan Zhang
- School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Xi-Bo Li
- Department of Physics, Jinan University, Guangzhou 510632, China
| | - Ying Xu
- School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Xiao-Lin Wei
- Department of Physics and Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Wen-Jin Yin
- School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
- Key Laboratory of Intelligent Sensors and Advanced Sensing Materials of Hunan Province, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Li-Min Liu
- School of Physics, Beihang University, Beijing 100083, China
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Razeghizadeh M, Pourfath M. First principles study on structural, electronic and optical properties of HfS 2(1-x)Se 2x and ZrS 2(1-x)Se 2x ternary alloys. RSC Adv 2022; 12:14061-14068. [PMID: 35558829 PMCID: PMC9092027 DOI: 10.1039/d2ra01905a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Accepted: 05/01/2022] [Indexed: 11/29/2022] Open
Abstract
Alloying 2D transition metal dichalcogenides (TMDs) with dopants to achieve ternary alloys is as an efficient and scalable solution for tuning the electronic and optical properties of two-dimensional materials. This study provides a comprehensive study on the electronic and optical properties of ternary HfS2(1−x)Se2(x) and ZrS2(1−x)Se2(x) [0 ≤ x ≤ 1] alloys, by employing density functional theory calculations along with random phase approximation. Phonon dispersions were also obtained by using density functional perturbation theory. The results indicate that both of the studied ternary families are stable and the increase of Selenium concentration in HfS2(1−x)Se2(x) and ZrS2(1−x)Se2(x) alloys results in a linear decrease of the electronic bandgap from 2.15 (ev) to 1.40 (ev) for HfS2(1−x)Se2(x) and 1.94 (ev) to 1.23 (ev) for ZrS2(1−x)Se2(x) based on the HSE06 functional. Increasing the Se concentration in the ternary alloys results in a red shift of the optical absorption spectra such that the main absorption peaks of HfS2(1−x)Se2(x) and ZrS2(1−x)Se2(x) cover a broad visible range from 3.153 to 2.607 eV and 2.405 to 1.908 eV, respectively. The studied materials appear to be excellent base materials for tunable electronic and optoelectronic devices in the visible range. Adding Selenium to HfS2 and ZrS2 two-dimensional materials allows tuning the optical properties in a wide visible spectrum that can be used in various electronic and optical applications, including solar cells.![]()
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Affiliation(s)
- Mohammadreza Razeghizadeh
- School of Electrical and Computer Engineering, College of Engineering, University of Tehran Tehran 14395-515 Iran
| | - Mahdi Pourfath
- School of Electrical and Computer Engineering, College of Engineering, University of Tehran Tehran 14395-515 Iran
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4
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Wang R, Xie KJ, Fu Q, Wu M, Pan GF, Lou DW, Liang FS. Transformation of Thioacids into Carboxylic Acids via a Visible-Light-Promoted Atomic Substitution Process. Org Lett 2022; 24:2020-2024. [PMID: 35263540 DOI: 10.1021/acs.orglett.2c00481] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
A visible-light-promoted atomic substitution reaction for transforming thiocacids into carboxylic acids with dimethyl sulfoxide (DMSO) as the oxygen source has been developed, affording various alkyl and aryl carboxylic acids in over 90% yields. The atomic substitution process proceeds smoothly through the photochemical reactivity of the formed hydrogen-bonding adduct between thioacids and DMSO. A DMSO-involved proton-coupled electron transfer (PCET) and the simultaneous generation of thiyl and hydroxyl radicals are proposed to be key steps for realizing the transformation.
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Affiliation(s)
- Rui Wang
- School of Petrochemical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Kai-Jun Xie
- School of Petrochemical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Qiang Fu
- School of Petrochemical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Min Wu
- School of Petrochemical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Gao-Feng Pan
- School of Petrochemical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Da-Wei Lou
- School of Petrochemical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Fu-Shun Liang
- College of Chemistry, Liaoning University, Shenyang 110036, China
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Luo Q, Yin S, Sun X, Tang Y, Feng Z, Dai X. Two-dimensional type-II XSi 2P 4/MoTe 2 (X = Mo, W) van der Waals heterostructures with tunable electronic and optical properties. NEW J CHEM 2022. [DOI: 10.1039/d2nj03809a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
The type-II MoSi2P4/MoTe2 (WSi2P4/MoTe2) possesses a direct bandgap of 0.258 eV (0.363 eV) at the PBE level and shows promise for application in the nanoelectronic and optoelectronic fields.
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Affiliation(s)
- Qingqing Luo
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Shaoqian Yin
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Xiaoxin Sun
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Yanan Tang
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, China
| | - Zhen Feng
- School of Materials Science and Engineering, Henan Engineering Research Center for Modification Technology of Metal Materials, Henan Institute of Technology, Xinxiang, Henan 453000, China
| | - Xianqi Dai
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
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Li F, Chen M, Wang Y, Zhu X, Zhang X, Zou Z, Zhang D, Yi J, Li Z, Li D, Pan A. Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS 2 heterostructure for sensitive photodetection. iScience 2021; 24:103031. [PMID: 34541467 PMCID: PMC8437799 DOI: 10.1016/j.isci.2021.103031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 06/15/2021] [Accepted: 08/20/2021] [Indexed: 11/18/2022] Open
Abstract
Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS2 as the substrate, we successfully realized the phase-controlled synthesis of ultrathin h-GaTe, leading to high-quality h-GaTe/MoS2 heterostructures. Theoretical calculation studies reveal that GaTe with hexagonal phase is more thermodynamically stable on MoS2 templates, which can be attributed to the strain stretching and the formation energy reduction. Based on the achieved p-n heterostructures, optoelectronic devices are designed and probed, where remarkable photoresponsivity (32.5 A/W) and fast photoresponse speed (<50 μs) are obtained, indicating well-behaved photo-sensing behaviors. The study here could offer a good reference for the controlled growth of the relevant materials, and the achieved heterostructure will find promising applications in future integrated electronic and optoelectronic devices and systems.
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Affiliation(s)
- Fang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Key Laboratory of Inferior Crude Oil Processing of Guangdong Provincial Higher Education Institutes, School of Chemical Engineering, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
| | - Yajuan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
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7
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Post-synthesis Tellurium Doping Induced Mirror Twin Boundaries in Monolayer Molybdenum Disulfide. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10144758] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Mirror twin boundaries (MTBs) have brought intriguing one-dimensional physics into the host 2D crystal. In this letter, we reported a chalcogen atom exchange route to induce MTBs into as-formed MoS2 monolayers via post-synthesis tellurium doping. Results from annular dark-field scanning transition electron microscope (ADF-STEM) characterizations revealed that tellurium substituted the sulfur sublattices of MoS2 preferentially around the edge areas. A large number of MTBs in a configuration of 4|4P-Te was induced therein. Analysis of the lattice structures around MTBs revealed that such a tellurium-substitution-induced MTB formation is an energy-favored process to reduce the strain upon a high ratio of tellurium doping.
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8
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Lin YC, Liu C, Yu Y, Zarkadoula E, Yoon M, Puretzky AA, Liang L, Kong X, Gu Y, Strasser A, Meyer HM, Lorenz M, Chisholm MF, Ivanov IN, Rouleau CM, Duscher G, Xiao K, Geohegan DB. Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures. ACS NANO 2020; 14:3896-3906. [PMID: 32150384 DOI: 10.1021/acsnano.9b10196] [Citation(s) in RCA: 60] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Atomically thin two-dimensional (2D) materials face significant energy barriers for synthesis and processing into functional metastable phases such as Janus structures. Here, the controllable implantation of hyperthermal species from pulsed laser deposition (PLD) plasmas is introduced as a top-down method to compositionally engineer 2D monolayers. The kinetic energies of Se clusters impinging on suspended monolayer WS2 crystals were controlled in the <10 eV/atom range with in situ plasma diagnostics to determine the thresholds for selective top layer replacement of sulfur by selenium for the formation of high quality WSSe Janus monolayers at low (300 °C) temperatures and bottom layer replacement for complete conversion to WSe2. Atomic-resolution electron microscopy and spectroscopy in tilted geometry confirm the WSSe Janus monolayer. Molecular dynamics simulations reveal that Se clusters implant to form disordered metastable alloy regions, which then recrystallize to form highly ordered structures, demonstrating low-energy implantation by PLD for the synthesis of 2D Janus layers and alloys of variable composition.
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Affiliation(s)
- Yu-Chuan Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Chenze Liu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Eva Zarkadoula
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Mina Yoon
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Xiangru Kong
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Yiyi Gu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Alex Strasser
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
- Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, Texas 77840, United States
| | - Harry M Meyer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Matthias Lorenz
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Matthew F Chisholm
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Ilia N Ivanov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, United States
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Hasan N, Hou B, Radadia AD. Ion Sensing with Solution-Gated Graphene Field-Effect Sensors in the Frequency Domain. IEEE SENSORS JOURNAL 2019; 19:8758-8766. [PMID: 33746620 PMCID: PMC7970481 DOI: 10.1109/jsen.2019.2921706] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Here, we examine the concept of frequency domain sensing with solution-gated graphene field-effect transistors, where a sine wave of primary frequency (1f) was applied at the gate and modulation of the power spectral density (PSD) of the drain-source current at 1f, 2f, and 3f was examined as the salt in the gate electrolyte was switched from KCl to CaCl2, and their concentrations were varied. The PSD at 1f, 2f, and 3f increased with the concentration of KCl or CaCl2, with the PSD at 1f being the most sensitive. We further correlated these changes to the shift in Dirac point. Switching the graphene substrate from oxide to hexagonal boron nitride, led to an improved device-to-device reproducibility and a significant reduction of noise, which translated to a higher signal-to-noise ratio and resolution in sensing salt concentrations. The signal-to-noise ratio at 1f was found to be a logarithmic function of KCl or CaCl2 concentration in the 0.1 to 1000 mM range.
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Affiliation(s)
| | - Bo Hou
- Louisiana Tech University, Ruston, LA 71272 USA
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10
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Li F, Feng Y, Li Z, Ma C, Qu J, Wu X, Li D, Zhang X, Yang T, He Y, Li H, Hu X, Fan P, Chen Y, Zheng B, Zhu X, Wang X, Duan X, Pan A. Rational Kinetics Control toward Universal Growth of 2D Vertically Stacked Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901351. [PMID: 31095803 DOI: 10.1002/adma.201901351] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Revised: 04/19/2019] [Indexed: 06/09/2023]
Abstract
The rational control of the nucleation and growth kinetics to enable the growth of 2D vertical heterostructure remains a great challenge. Here, an in-depth study is provided toward understanding the growth mechanism of transition metal dichalcogenides (TMDCs) vertical heterostructures in terms of the nucleation and kinetics, where active clusters with a high diffusion barrier will induce the nucleation on top of the TMDC templates to realize vertical heterostructures. Based on this mechanism, in the experiment, through rational control of the metal/chalcogenide ratio in the vapor precursors, effective manipulation of the diffusion barrier of the active clusters and precise control of the heteroepitaxy direction are realized. In this way, a family of vertical TMDCs heterostructures is successfully designed. Optical studies and scanning transmission electron microscopy investigations exhibit that the resulting heterostructures possess atomic sharp interfaces without apparent alloying and defects. This study provides a deep understanding regarding the growth mechanism in terms of the nucleation and kinetics and the robust growth of 2D vertical heterostructures, defining a versatile material platform for fundamental studies and potential device applications.
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Affiliation(s)
- Fang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Yexin Feng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Ziwei Li
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Chao Ma
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Junyu Qu
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Xueping Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Dong Li
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Tiefeng Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Yunqiu He
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Honglai Li
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Xuelu Hu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Peng Fan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Ying Chen
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, Hunan University, Changsha, Hunan, 410082, China
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
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11
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Liao CK, Phan J, Herrera M, Mahmoud MA. Modifying the Band Gap of Semiconducting Two-Dimensional Materials by Polymer Assembly into Different Structures. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2019; 35:4956-4965. [PMID: 30874438 DOI: 10.1021/acs.langmuir.9b00205] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Polyethylene glycol (PEG) assembled on the surface of two-dimensional tungsten disulfide (WS2) into a limited number of nanoislands (NIs), nanoshells (NSs), and granular nanoparticulates (GNPs) depending on its chain length. NI assemblies showed a nonmeasurable shift of photoluminescence (PL) and the A and B absorption peaks of WS2. This confirmed that the electronic doping by thiol is not effective. The PEG NS assembly displayed a smaller red shift of the PL and a slight decrease of the energy difference between the A and B absorption peaks of WS2. However, increasing the dielectric function on the surface of WS2 has a small influence on their optical properties. The PEG NP assembly on WS2 exhibited a significant red shift of the PL spectrum and a large decrease of the energy difference between A and B absorption peaks. Deforming the WS2 sheet by the PEG NP assembly decreased the orbital coupling and lowered the electronic direct band gap significantly. Raman bands of WS2 are shifted to a higher frequency on improving its mechanical strength after the PEG assembly.
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12
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Zheng W, Zheng B, Yan C, Liu Y, Sun X, Qi Z, Yang T, Jiang Y, Huang W, Fan P, Jiang F, Ji W, Wang X, Pan A. Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1802204. [PMID: 30989032 PMCID: PMC6446596 DOI: 10.1002/advs.201802204] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Revised: 01/16/2019] [Indexed: 05/24/2023]
Abstract
2D vertical van der Waals (vdW) heterostructures with atomically sharp interfaces have attracted tremendous interest in 2D photonic and optoelectronic applications. Band alignment engineering in 2D heterostructures provides a perfect platform for tailoring interfacial charge transfer behaviors, from which desired optical and optoelectronic features can be realized. Here, by developing a two-step chemical vapor deposition strategy, direct vapor growth of monolayer PbI2 on monolayer transition metal dichalcogenides (TMDCs) (WS2, WSe2, or alloying WS2(1- x )Se2 x ), forming bilayer vertical heterostructures, is demonstrated. Based on the calculated electron band structures, the interfacial band alignments of the obtained heterostructures can be gradually tuned from type-I (PbI2/WS2) to type-II (PbI2/WSe2). Steady-state photoluminescence (PL) and time-resolved PL measurements reveal that the PL emissions from the bottom TMDC layers can be modulated from apparently enhanced (for WS2) to greatly quenched (for WSe2) compared to their monolayer counterparts, which can be attributed to the band alignment-induced distinct interfacial charge transfer behaviors. The band alignment nature of the heterostructures is further demonstrated by the PL excitation spectroscopy and interlayer exciton investigation. The realization of 2D vertical heterostructures with tunable band alignments will provide a new material platform for designing and constructing multifunctional optoelectronic devices.
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Affiliation(s)
- Weihao Zheng
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Biyuan Zheng
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Changlin Yan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Ying Liu
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Xingxia Sun
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Zhaoyang Qi
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Tiefeng Yang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Ying Jiang
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
| | - Wei Huang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Peng Fan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Feng Jiang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Xiao Wang
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
| | - Anlian Pan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
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13
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Mendes RG, Pang J, Bachmatiuk A, Ta HQ, Zhao L, Gemming T, Fu L, Liu Z, Rümmeli MH. Electron-Driven In Situ Transmission Electron Microscopy of 2D Transition Metal Dichalcogenides and Their 2D Heterostructures. ACS NANO 2019; 13:978-995. [PMID: 30673226 DOI: 10.1021/acsnano.8b08079] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Investigations on monolayered transition metal dichalcogenides (TMDs) and TMD heterostructures have been steadily increasing over the past years due to their potential application in a wide variety of fields such as microelectronics, sensors, batteries, solar cells, and supercapacitors, among others. The present work focuses on the characterization of TMDs using transmission electron microscopy, which allows not only static atomic resolution but also investigations into the dynamic behavior of atoms within such materials. Herein, we present a body of recent research from the various techniques available in the transmission electron microscope to structurally and analytically characterize layered TMDs and briefly compare the advantages of TEM with other characterization techniques. Whereas both static and dynamic aspects are presented, special emphasis is given to studies on the electron-driven in situ dynamic aspects of these materials while under investigation in a transmission electron microscope. The collection of the presented results points to a future prospect where electron-driven nanomanipulation may be routinely used not only in the understanding of fundamental properties of TMDs but also in the electron beam engineering of nanocircuits and nanodevices.
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Affiliation(s)
- Rafael G Mendes
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Jinbo Pang
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Alicja Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
- Centre of Polymer and Carbon Materials , Polish Academy of Sciences , M. Curie-Skłodowskiej 34 , Zabrze 41-819 , Poland
| | | | | | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Lei Fu
- College of Chemistry and Molecular Science , Wuhan University , Wuhan 430072 , China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
- Centre of Polymer and Carbon Materials , Polish Academy of Sciences , M. Curie-Skłodowskiej 34 , Zabrze 41-819 , Poland
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14
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Kim SY, Kim JH, Lee S, Kwak J, Jo Y, Yoon E, Lee GD, Lee Z, Kwon SY. The impact of substrate surface defects on the properties of two-dimensional van der Waals heterostructures. NANOSCALE 2018; 10:19212-19219. [PMID: 30303224 DOI: 10.1039/c8nr03777a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The recent emergence of vertically stacked van der Waals (vdW) heterostructures provides new opportunities for these materials to be employed in a wide range of novel applications. Understanding the interlayer coupling in the stacking geometries of the heterostructures and its effect on the resultant material properties is particularly important for obtaining materials with desirable properties. Here, we report that the atomic bonding between stacked layers and thereby the interlayer properties of the vdW heterostructures can be well tuned by the substrate surface defects using WS2 flakes directly grown on graphene. We show that the defects of graphene have no significant effect on the crystal structure or the quality of the grown WS2 flakes; however, they have a strong influence on the interlayer interactions between stacked layers, thus affecting the layer deformability, thermal stability, and physical and electrical properties. Our experimental and computational investigations also reveal that WS2 flakes grown on graphene defects form covalent bonds with the underlying graphene via W atomic bridges (i.e., formation of larger overlapping hybrid orbitals), enabling these flakes to exhibit different intrinsic properties, such as higher conductivity and improved contact characteristics than heterostructures that have vdW interactions with graphene. This result emphasizes the importance of understanding the interlayer coupling in the stacking geometries and its correlation effect for designing desirable properties.
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Affiliation(s)
- Se-Yang Kim
- School of Materials Science and Engineering, Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
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15
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Habib MR, Li H, Kong Y, Liang T, Obaidulla SM, Xie S, Wang S, Ma X, Su H, Xu M. Tunable photoluminescence in a van der Waals heterojunction built from a MoS 2 monolayer and a PTCDA organic semiconductor. NANOSCALE 2018; 10:16107-16115. [PMID: 30113056 DOI: 10.1039/c8nr03334j] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
We report the photoluminescence (PL) characteristics of a van der Waals (vdW) heterojunction constructed by simply depositing an organic semiconductor of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) onto a two-dimensional MoS2 monolayer. The crystallinity of PTCDA on MoS2 is significantly improved due to the vdW epitaxial growth. We observe an enhanced PL intensity and PL peak shift of the MoS2/PTCDA heterojunction compared with the solo MoS2 and PTCDA layer. The synergistic PL characteristics are believed to originate from the hybridization interaction between the MoS2 and the PTCDA as evidenced by density functional theory calculations and Raman measurements. The hybridization interfacial interaction is found to be greatly influenced by the crystalline ordering of the PTCDA film on the 2D MoS2. Our study opens up a new avenue to tune the PL of vdW heterojunctions consisting of TMDs and organic semiconductors for optoelectronic applications.
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Affiliation(s)
- Mohammad Rezwan Habib
- State Key Laboratory of Silicon Materials, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
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16
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Zheng B, Ma C, Li D, Lan J, Zhang Z, Sun X, Zheng W, Yang T, Zhu C, Ouyang G, Xu G, Zhu X, Wang X, Pan A. Band Alignment Engineering in Two-Dimensional Lateral Heterostructures. J Am Chem Soc 2018; 140:11193-11197. [DOI: 10.1021/jacs.8b07401] [Citation(s) in RCA: 98] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Jianyue Lan
- Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
| | - Zhe Zhang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, People’s Republic of China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Tiefeng Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, People’s Republic of China
| | - Gengzhao Xu
- Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronic Science, and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
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17
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Li H, Wang X, Zhu X, Duan X, Pan A. Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures. Chem Soc Rev 2018; 47:7504-7521. [DOI: 10.1039/c8cs00418h] [Citation(s) in RCA: 78] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
This article reviews our successful realization of the composition modulated single chalcogenide semiconductor nanostructures.
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Affiliation(s)
- Honglai Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province
- State Key Laboratory of Chemo/Biosensing and Chemometrics
- College of Materials Science and Engineering
- Hunan University
- Changsha
| | - Xiao Wang
- School of Physics and Electronics
- Hunan University
- Changsha
- P. R. China
| | - Xiaoli Zhu
- School of Physics and Electronics
- Hunan University
- Changsha
- P. R. China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry
- University of California
- Los Angeles
- USA
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province
- State Key Laboratory of Chemo/Biosensing and Chemometrics
- College of Materials Science and Engineering
- Hunan University
- Changsha
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