Near-Unity Efficiency Energy Transfer from Colloidal Semiconductor Quantum Wells of CdSe/CdS Nanoplatelets to a Monolayer of MoS2

Efficient Energy Transfer Enabled by Dark States in van der Waals Heterostructures

Dark exciton states show great potential in condensed matter physics and optoelectronics because of their long lifetime and rich distribution in band structures. Therefore, they can theoretically serve as efficient energy reservoirs, providing a platform for future applications. However, their optical-transition-forbidden nature severely limits their experimental exploration and hinders their current application. Here, we demonstrate a universal dark state nonlinear energy transfer (ET) mechanism in monolayer WS2/CsPbBr3 van der Waals heterostructures under two-photon excitation, which successfully utilizes the enormous energy reserved in the dark exciton state of CsPbBr3 to significantly improve the photoelectric performance of monolayer WS2. We first propose the scenario of resonant ET between the dark state of CsPbBr3 and WS2, and then reveal that this is a typical Förster resonant ET and belongs to the 2D-2D category. Interestingly, the dark state ET in CsPbBr3 is identified as a long-range donor-bridge-acceptor hopping mode, with a potential distance exceeding 200 nm. Finally, we successfully achieve nearly an order of magnitude enhancement in the near-infrared detection performance of monolayer WS2. Our results enrich the theory of dark exciton states and ET, and they provide a way of using dark exciton states for future practical applications.

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalcogenides (TMDs) and nanocrystals (NCs) with low-dimensional extension, hybrid structures of semiconducting nanoscale matter can lead to fascinating new technological scenarios. Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. Here, we will review recent research on the combined TMD/NC hybrid system with an emphasis on two major interaction mechanisms: energy transfer and charge transfer. With a focus on the quantum well nature in these hybrid semiconductors, we will briefly highlight state-of-the-art protocols for their structure formation and discuss the interaction mechanisms of energy versus charge transfer, before concluding with a perspective section that highlights novel types of interactions between NCs and TMDs.

AC-driven multicolor electroluminescence from a hybrid WSe2 monolayer/AlGaInP quantum well light-emitting device

Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe₂ monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe₂ monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe₂ monolayer was observed to boost the WSe₂ monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe₂ monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.

Atomically flat semiconductor nanoplatelets for light-emitting applications

The last decade has witnessed extensive breakthroughs and significant progress in atomically flat two-dimensional (2D) semiconductor nanoplatelets (NPLs) in terms of synthesis, growth mechanisms, optical and electronic properties and practical applications. Such NPLs have electronic structures similar to those of quantum wells in which excitons are predominantly confined along the vertical direction, while electrons are free to move in the lateral directions, resulting in unique optical properties, such as extremely narrow emission line width, short photoluminescence (PL) lifetime, high gain coefficient, and giant oscillator strength transition (GOST). These unique optical properties make NPLs favorable for high color purity light-emitting applications, in particular in light-emitting diodes (LEDs), backlights for liquid crystal displays (LCDs) and lasers. This review article first introduces the intrinsic characteristics of 2D semiconductor NPLs with atomic flatness. Subsequently, the approaches and mechanisms for the controlled synthesis of atomically flat NPLs are summarized followed by an insight on recent progress in the mediation of core/shell, core/crown and core/crown@shell structures by selective epitaxial growth of passivation layers on different planes of NPLs. Moreover, an overview of the unique optical properties and the associated light-emitting applications is elaborated. Despite great progress in this research field, there are some issues relating to heavy metal elements such as Cd²⁺ in NPLs, and the ambiguous gain mechanisms of NPLs and others are the main obstacles that prevent NPLs from widespread applications. Therefore, a perspective is included at the end of this review article, in which the current challenges in this stimulating research field are discussed and possible solutions to tackle these challenges are proposed.

Distinguishing Ultrafast Energy Transfer in Atomically Thin MoS2 /WS2 Heterostructures

Van der Waals semiconducting heterostructures, known as stacks of atomically thin transition-metal dichalcogenide (TMD) layers, have recently been reported as new quantum materials with fascinating optoelectronic properties and novel functionalities. These discoveries are significantly related to the interfacial carrier dynamics of the excited states. Carrier dynamics have been reported to be predominantly driven by the ultrafast charge transfer (CT) process; however, the energy transfer (ET) process remains elusive. Herein, the ET process in MoS₂ /WS₂ heterostructures via transient absorption microscopy is reported. By analyzing the ultrafast dynamics using various MoS₂ /WS₂ interfaces, an ET rate of ≈240 fs is obtain, which is not trivial to the CT process. This study elucidates the role of the ET process in interfacial carrier dynamics and provides guidance for engineering interfaces for optoelectronic and quantum applications of TMD heterostructures.

Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure

Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe₂ and ReS₂, nonradiative energy transfer (ET) from higher to lower work function material (ReS₂ to MoSe₂) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe₂ photoluminescence (PL) enhancement as compared to the MoSe₂ area alone. In a completely encapsulated sample, the HS PL emission further increases by a factor of 6.4. After completely blocking the CT process, more than 1 order of magnitude higher MoSe₂ PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS₂ and WSe₂, CT dominates over ET, resulting in a severely quenched WSe₂ PL. This study not only provides significant insight into the competing interlayer processes but also shows an innovative way to increase the PL emission intensity of the desired TMD material using the ET process by carefully choosing the right material combination for HS.

Mechanistic Investigation of Molybdenum Disulfide Defect Photoluminescence Quenching by Adsorbed Metallophthalocyanines

Lattice defects play an important role in determining the optical and electrical properties of monolayer semiconductors such as MoS₂. Although the structures of various defects in monolayer MoS₂ are well studied, little is known about the nature of the fluorescent defect species and their interaction with molecular adsorbates. In this study, the quenching of the low-temperature defect photoluminescence (PL) in MoS₂ is investigated following the deposition of metallophthalocyanines (MPcs). The quenching is found to significantly depend on the identity of the phthalocyanine metal, with the quenching efficiency decreasing in the order CoPc > CuPc > ZnPc, and almost no quenching by metal-free H₂Pc is observed. Time-correlated single photon counting (TCSPC) measurements corroborate the observed trend, indicating a decrease in the defect PL lifetime upon MPc adsorption, and the gate voltage-dependent PL reveals the suppression of the defect emission even at large Fermi level shifts. Density functional theory modeling argues that the MPc complexes stabilize dark negatively charged defects over luminescent neutral defects through an electrostatic local gating effect. These results demonstrate the control of defect-based excited-state decay pathways via molecular electronic structure tuning, which has broad implications for the design of mixed-dimensional optoelectronic devices.

Near-Field Energy Transfer into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors

Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Förster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al₂ O₃ ) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d^-1 with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.

Recent Advances in Two-Dimensional Quantum Dots and Their Applications

Two-dimensional quantum dots have received a lot of attention in recent years due to their fascinating properties and widespread applications in sensors, batteries, white light-emitting diodes, photodetectors, phototransistors, etc. Atomically thin two-dimensional quantum dots derived from graphene, layered transition metal dichalcogenide, and phosphorene have sparked researchers' interest with their unique optical and electronic properties, such as a tunable energy bandgap, efficient electronic transport, and semiconducting characteristics. In this review, we provide in-depth analysis of the characteristics of two-dimensional quantum dots materials, their synthesis methods, and opportunities and challenges for novel device applications. This analysis will serve as a tipping point for learning about the recent breakthroughs in two-dimensional quantum dots and motivate more scientists and engineers to grasp two-dimensional quantum dots materials by incorporating them into a variety of electrical and optical fields.

Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Energy and charge transfer processes in interacting donor-acceptor systems are the bedrock of many fundamental studies and technological applications ranging from biosensing to energy storage and quantum optoelectronics. Central to the understanding and utilization of these transfer processes is having full control over the donor-acceptor distance. With their atomic thickness and ease of integrability, two-dimensional materials are naturally emerging as an ideal platform for the task. Here, we review how van der Waals semiconductors are shaping the field. We present a selection of some of the most significant demonstrations involving transfer processes in layered materials that deepen our understanding of transfer dynamics and are leading to intriguing practical realizations. Alongside current achievements, we discuss outstanding challenges and future opportunities.

Design of Core-Shell Quantum Dots-3D WS2 Nanowall Hybrid Nanostructures with High-Performance Bifunctional Sensing Applications

Transition metal dichalcogenides (TMDCs) have recently attracted a tremendous amount of attention owing to their superior optical and electrical properties as well as the interesting and various nanostructures that are created by different synthesis processes. However, the atomic thickness of TMDCs limits the light absorption and results in the weak performance of optoelectronic devices, such as photodetectors. Here, we demonstrate the approach to increase the surface area of TMDCs by a one-step synthesis process of TMDC nanowalls from WO_x into three-dimensional (3D) WS₂ nanowalls. By utilizing a rapid heating and rapid cooling process, the formation of 3D nanowalls with a height of approximately 150 nm standing perpendicularly on top of the substrate can be achieved. The combination of core-shell colloidal quantum dots (QDs) with three different emission wavelengths and 3D WS₂ nanowalls further improves the performance of WS₂-based photodetector devices, including a photocurrent enhancement of 320-470% and shorter response time. The significant results of the core-shell QD-WS₂ hybrid devices can be contributed by the high nonradiative energy transfer efficiency between core-shell QDs and the nanostructured material, which is caused by the spectral overlap between the emission of core-shell QDs and the absorption of WS₂. Besides, outstanding NO₂ gas-sensing performance of core-shell QDs/WS₂ devices can be achieved with an extremely low detection limit of 50 ppb and a fast response time of 26.8 s because of local p-n junctions generated by p-type 3D WS₂ nanowalls and n-type core-shell CdSe-ZnS QDs. Our work successfully reveals the energy transfer phenomenon in core-shell QD-WS₂ hybrid devices and shows great potential in commercial multifunctional sensing applications.

Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling

Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable lasers. However, applications relying on their optical gain suffer from nonradiative Auger decay due to multi-excitonic nature of light amplification in II-VI semiconductor nanocrystals. Here, we show sub-single exciton level of optical gain threshold in specially engineered CdSe/CdS@CdZnS core/crown@gradient-alloyed shell quantum wells. This sub-single exciton ensemble-averaged gain threshold of (Ng)≈ 0.84 (per particle) resulting from impeded Auger recombination, along with a large absorption cross-section of quantum wells, enables us to observe the amplified spontaneous emission starting at an ultralow pump fluence of ~ 800 nJ cm-2, at least three-folds better than previously reported values among all colloidal nanocrystals. Finally, using these gradient shelled quantum wells, we demonstrate a vertical cavity surface-emitting laser operating at a low lasing threshold of 7.5 μJ cm-2. These results represent a significant step towards the realization of solution-processable electrically-driven colloidal lasers.

Photoluminescence enhancement of MoS2/CdSe quantum rod heterostructures induced by energy transfer and exciton-exciton annihilation suppression

Energy transfer in heterostructures is an essential interface interaction for extraordinary energy conversion properties, which promote promising applications in light-emitting and photovoltaic devices. However, when atomic-layered transition metal dichalcogenides (TMDCs) act as the energy acceptor because of strong Coulomb interactions, the transferred energy can be consumed by nonradiative exciton annihilations, which hampers the development of light-emitting devices. Hence, revealing the mechanism of energy transfer and the related relaxation processes from the aspect of the acceptor in the heterostructure is key to reducing nonradiative loss and optimizing luminescence. Here, we study the exciton dynamics from the standpoint of the acceptor in MoS₂/CdSe quantum rod (QR) heterostructures and realize efficiently enhanced photoluminescence (PL). Through femtosecond pump-probe measurements, it is directly observed that energy transfer from CdSe QRs largely raises the exciton population of the acceptor, MoS₂, providing a larger emission "source". In addition, the dielectric environment introduced by CdSe QRs efficiently enhances the PL by suppressing exciton-exciton annihilation (EEA). This study provides new insights for on-chip applications such as light-emitting diodes and optical conversion devices based on low dimensional semiconductor heterostructures.

Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions

ConspectusThe electronic dimensionality of a material is defined by the number of spatial degrees of confinement of its electronic wave function. Low-dimensional semiconductor nanomaterials with at least one degree of spatial confinement have optoelectronic properties that are tunable with size and environment (dielectric and chemical) and are of particular interest for optoelectronic applications such as light detection, light harvesting, and photocatalysis. By combining nanomaterials of differing dimensionalities, mixed-dimensional heterojunctions (MDHJs) exploit the desirable characteristics of their components. For example, the strong optical absorption of zero-dimensional (0D) materials combined with the high charge carrier mobilities of two-dimensional (2D) materials widens the spectral response and enhances the responsivity of mixed-dimensional photodetectors, which has implications for ultrathin, flexible optoelectronic devices. MDHJs are highly sensitive to (i) interfacial chemistry because of large surface area-to-volume ratios and (ii) electric fields, which are incompletely screened because of the ultrathin nature of MDHJs. This sensitivity presents opportunities for control of physical phenomena in MDHJs through chemical modification, optical excitation, externally applied electric fields, and other environmental parameters. Since this fast-moving research area is beginning to pose and answer fundamental questions that underlie the fundamental optoelectronic behavior of MDHJs, it is an opportune time to assess progress and suggest future directions in this field.In this Account, we first outline the characteristic properties, advantages, and challenges for low-dimensional materials, many of which arise as a result of quantum confinement effects. The optoelectronic properties and performance of MDHJs are primarily determined by dynamics of excitons and charge carriers at their interfaces, where these particles tunnel, trap, scatter, and/or recombine on the time scales of tens of femtoseconds to hundreds of nanoseconds. We discuss several photophysical phenomena that deviate from those observed in bulk heterojunctions, as well as factors that can be used to vary, probe, and ultimately control the behavior of excitons and charge carriers in MDHJ systems. We then discuss optoelectronic applications of MDHJs, namely, photodetectors, photovoltaics, and photocatalysts, and identify current performance limits compared to state-of-the-art benchmarks. Finally, we suggest strategies to extend the current understanding of dynamics in MDHJs toward the realization of stimuli-driven responses, particularly with respect to exciton delocalization, quantum emission, interfacial morphology, responsivity to external stimuli, spin selectivity, and usage of chemically reactive materials.

High throughput crystal structure and composition mapping of crystalline nanoprecipitates in alloys by transmission Kikuchi diffraction and analytical electron microscopy

Statistically significant crystal structure and composition identification of nanocrystalline features such as nanoparticles/nanoprecipitates in materials chemistry and alloy designing using electron microscopy remains a grand challenge. In this paper, we reveal that differing crystallographic phases of nanoprecipitates in alloys can be mapped with unprecedented statistics using transmission Kikuchi diffraction (TKD), on typical carbon-based electron-transparent samples. Using a case of multiphase, multicomponent nanoprecipitates extracted from an improved version of 9% chromium Eurofer-97 reduced-activation ferritic-martensitic steel we show that TKD successfully identified more than thousand M₂₃C₆, MX, M₇C_3, and M₂X (M=Fe, Cr, W, V, Ta; X = C, N) nanoprecipitates in a single scan, something that is currently unachievable using a transmission electron microscope (TEM) without incorporating a precision electron diffraction (PED) system. Precipitates as small as ∼20-25 nm were successfully phase identified by TKD. We verified the TKD phase identification using high-resolution transmission electron microscopy (HRTEM) and convergent beam electron diffraction (CBED) pattern analysis of a few precipitates that were identified by TKD on same sample. TKD study was combined with state-of-art analytical scanning transmission electron microscopy (STEM)-energy dispersive X-ray (EDX) spectroscopy and multivariate statistical analysis (MVSA) which provided the complete crystal structure and distinct chemistries of the precipitates in the steel in a high throughput automated way. This technique should be applicable to characterizing any multiphase crystalline nanoparticles or nanomaterials. The results highlight that combining phase identification by TKD with analytical STEM and modern data analytics may open new pathways in big data material characterization at nanoscale that may be highly beneficial for characterizing existing materials and in designing new materials.