Contact and Noncontact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

Solution Synthesis of NdTe3 Magnetic Nanosheets

Neodymium tritelluride is a layered van der Waals material, with correlated electronic properties including high electronic mobility, charge density waves, and antiferromagnetism. We developed a solution synthesis method to form free-standing nanosheets of NdTe3, with nanosheet lateral dimensions of 200-400 nm. The morphology of the nanosheet was influenced by the neodymium precursor. When Nd[(N(SiMe3)2]3 was used as the metal source the nanosheet thickness average was 12 ± 2.5 nm, alternatively the combination of NdCl3 and Li(N(SiMe3)2) led to thicker nanosheets, approximately 19 ± 2.4 nm. We believe that the difference in thickness and changes in surface chemistry point to the role of chloride in accelerating nanocrystal growth for the synthesis with NdCl3 (and Li(N(SiMe3)2). Both types of nanosheets exhibit charge density wave (CDW) distortions as measured using electron diffraction and investigated using variable temperature Raman scattering. Interestingly, the magnetic studies suggest a distinct change in properties between 12 and 19 nm thickness in antiferromagnetic NdTe3.

High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons

Two-dimensional tin monosulfide (SnS) is attractive for the development of electronic and optoelectronic devices with anisotropic characteristics. However, its shape-controlled synthesis with an atomic thickness and high quality remains challenging. Here, we show that highly crystalline SnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermal treatment (400 °C). These SnS nanoribbons have a length of several tens of micrometers and a thickness down to 5.8 nm, giving an average aspect ratio of ∼30.6. The crystal orientation along the zigzag direction and the in-plane structural anisotropy of the SnS nanoribbons are identified by transmission electron microscopy and polarized Raman spectroscopy, respectively. An ionic liquid-gated field-effect transistor fabricated using the SnS nanoribbon exhibits an on/off current ratio of >103 and a field-effect mobility of ∼0.7 cm2 V-1 s-1. This work provides a unique way to achieve one-dimensional growth of SnS.

AtomVision: A Machine Vision Library for Atomistic Images

Computer vision techniques have immense potential for materials design applications. In this work, we introduce an integrated and general-purpose AtomVision library that can be used to generate and curate microscopy image (such as scanning tunneling microscopy and scanning transmission electron microscopy) data sets and apply a variety of machine learning techniques. To demonstrate the applicability of this library, we (1) establish an atomistic image data set of about 10 000 materials with large structural and chemical diversity, (2) develop and compare convolutional and atomistic line graph neural network models to classify the Bravais lattices, (3) demonstrate the application of fully convolutional neural networks using U-Net architecture to pixelwise classify atom versus background, (4) use a generative adversarial network for super resolution, (5) curate an image data set on the basis of natural language processing using an open-access arXiv data set, and (6) integrate the computational framework with experimental microscopy images for Rh, Fe₃O₄, and SnS systems. The AtomVision library is available at https://github.com/usnistgov/atomvision.

Recent advances in 2D TMD circular photo-galvanic effects

Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-power photovoltaic systems due to their unique optoelectronic properties. The 2D materials can be naturally thin, and their properties can be altered in a variety of ways. Therefore, these materials may be used to develop high-performance opto-spintronic and photovoltaic devices. The most recent and promising strategies were used to induce circular photo-galvanic effects (CPGEs) in 2D TMD materials with broken inversion symmetry. The majority of quantum devices were manufactured by mechanical exfoliation to investigate the electrical behavior of ultrathin 2D materials. The investigation of CPGEs in 2D materials could enable the exploration of spin-polarized optoelectronics to produce more energy-efficient computing systems. The current research on nanomaterial-based materials paves the way for developing materials to store, manipulate, and transmit information with better performance. Finally, this study concludes by summarizing the current challenges and prospects.

Chemical Vapor Deposition of Quaternary 2D BiCuSeO p-Type Semiconductor with Intrinsic Degeneracy

2D BiCuSeO is an intrinsic p-type degenerate semiconductor due to its self-doping effect, which possesses great potential to fabricate high-performance 2D-2D tunnel field-effect transistors (TFETs). However, the controllable synthesis of multinary 2D materials by chemical vapor deposition (CVD) is still a challenge due to the restriction of thermodynamics. Here, the CVD synthesis of quaternary 2D BiCuSeO nanosheets is realized. As-grown BiCuSeO nanosheets with thickness down to ≈6.1 nm (≈7 layers) and domain size of ≈277 µm show excellent ambient stability. Intrinsic p-type degeneracy of BiCuSeO, capable of maintaining even in a few layers, is comprehensively unveiled. By varying the thicknesses and temperatures, the carrier concentration of BiCuSeO nanosheets can be adjusted in the range of 10¹⁹ to 10²¹ cm^-3 , and the Hall mobility of BiCuSeO is ≈191 cm² V^-1 s^-1 (at 2 K). Furthermore, taking advantage of the p-type degeneracy of BiCuSeO, a prototypical BiCuSeO/MoS₂ TFET is fabricated. The emergence of the negative differential resistance trend and multifunctional diodes by modulating the gate voltage and temperature reveal the great practical implementation potential of BiCuSeO nanosheets. These results pave way for the CVD synthesis of multinary 2D materials and rational design of high-performance tunnel devices.

Recent Progress on Nanomaterials for NO2 Surface Acoustic Wave Sensors

NO₂ gas surface acoustic wave (SAW)sensors are under continuous development due to their high sensitivity, reliability, low cost and room temperature operation. Their integration ability with different receptor nanomaterials assures a boost in the performance of the sensors. Among the most exploited nano-materials for sensitive detection of NO₂ gas molecules are carbon-based nanomaterials, metal oxide semiconductors, quantum dots, and conducting polymers. All these nanomaterials aim to create pores for NO₂ gas adsorption or to enlarge the specific surface area with ultra-small nanoparticles that increase the active sites where NO₂ gas molecules can diffuse. This review provides a general overview of NO₂ gas SAW sensors, with a focus on the different sensors’ configurations and their fabrication technology, on the nanomaterials used as sensitive NO₂ layers and on the test methods for gas detection. The synthesis methods of sensing nanomaterials, their functionalization techniques, the mechanism of interaction between NO₂ molecules and the sensing nanomaterials are presented and discussed.

Colloidal Two-Dimensional Metal Chalcogenides: Realization and Application of the Structural Anisotropy

ConspectusDue to the spatial confinement, two-dimensional metal chalcogenides display an extraordinary optical response and carrier transport ability. Solution-based synthesis techniques such as colloidal hot injection and ion exchange provide a cost-effective way to fabricate such low-dimensional semiconducting nanocrystals. Over the years, developments in colloidal chemistry made it possible to synthesize various kinds of ultrathin colloidal nanoplatelets, including wurtzite- and zinc blende-type CdSe, rock salt PbS, black phosphorus-like SnX (X = S or Se), hexagonal copper sulfides, selenides, and even transition metal dichalcogenides like MoS₂. By altering experimental conditions and applying capping ligands with specific functional groups, it is possible to accurately tune the dimensionality, geometry, and consequently the optical properties of these colloidal metal chalcogenide crystals. Here, we review recent progress in the syntheses of two-dimensional colloidal metal chalcogenides (CMCs) and property characterizations based on optical spectroscopy or device-related measurements. The discoveries shine a light on their huge prospect for applications in areas such as photovoltaics, optoelectronics, and spintronics. In specific, the formation mechanisms of two-dimensional CMCs are discussed. The growth of colloidal nanocrystals into a two-dimensional shape is found to require either an intrinsic structural asymmetry or the assist of coexisted ligand molecules, which act as lamellar double-layer templates or "facet" the crystals via selective adsorption. By performing optical characterizations and especially ultrafast spectroscopic measurements on these two-dimensional CMCs, their unique electronic and excitonic features are revealed. A strong dependence of optical transition energies linked to both interband and inter-subband processes on the crystal geometry can be verified, highlighting a tremendous confinement effect in such nanocrystals. With the self-assembly of two-dimensional nanocrystals or coupling of different phases by growing heterostructures, unconventional optical performances such as charge transfer state generation or efficient Förster resonance energy transfer are discovered. The growth of large-scale individualized PbS and SnS nanosheets can be realized by facile hot injection techniques, which gives the opportunity to investigate the charge carrier behavior within a single nanocrystal. According to the results of the device-based measurements on these individualized crystals, structure asymmetry-induced anisotropic electrical responses and Rashba effects caused by a splitting of spin-resolved bands in the momentum space due to strong spin-orbit-coupling are demonstrated. It is foreseen that such geometry-controlled, large-scale two-dimensional CMCs can be the ideal materials used for designing high-efficiency photonics and electronics.

Optimal field-effect transistor operation for high-resolution biochemical measurements

Field-effect transistors (FETs) are powerful tools for sensitive measurements of numerous biomarkers (e.g., proteins, nucleic acids, and antigen) and gaseous species. Most research studies in this field focused on building discrete devices with high performance. We show that instrumentation that is commonly used in multiple areas of physics and engineering can greatly improve the performance of measurement systems that embed FET-based transducers for biological applications. We review the state-of-the-art instrumentation in the field as applied to sensing with FETs. We show how high-performance dual-gate 2D FETs that we recently developed, when operated using closed-loop proportional-integral-derivative control, can drastically improve both the sensitivity and resolution. We further show that this closed-loop control approach can be extended to commonly used single-gate silicon FETs. The generalizability of the results will allow their application to virtually any previously developed FET-based sensor. Finally, we provide insight into further optimization and performance benefits that can be extracted by using the closed-loop feedback approach for applications in biosensing.

Recent Advances in 2D Metal Monochalcogenides

The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.

Anisotropic circular photogalvanic effect in colloidal tin sulfide nanosheets

Tin sulfide promises very interesting properties such as a high optical absorption coefficient and a small band gap, while being less toxic compared to other metal chalcogenides. However, the limitations in growing atomically thin structures of tin sulfide hinder the experimental exploration of these properties. Due to the flexibility of the colloidal synthesis, it is possible to synthesize very thin and at the same time large nanosheets. Electrical transport measurements show that these nanosheets can function as field-effect transistors with an on/off ratio of more than 105 at low temperatures and p-type behavior. The temperature dependency of the charge transport reveals that defects in the crystal are responsible for the formation of holes as majority carriers. During illumination with circularly polarized light, these crystals generate a helicity dependent photocurrent at zero-volt bias, since their symmetry is broken by asymmetric interfaces (substrate and vacuum). Further, the observed circular photogalvanic effect shows a pronounced in-plane anisotropy, with a higher photocurrent along the armchair direction, originating from the higher absorption coefficient in this direction. Our new insights show the potential of tin sulfide for new functionalities in electronics and optoelectronics, for instance as polarization sensors.

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices. Since the anisotropic properties have a close relationship with their anisotropic structural characters, especially for materials with low-symmetry, exploring new low-symmetry layered materials and investigating their anisotropic properties have inspired numerous research efforts. In this paper, we review the recent experimental progresses on low-symmetry layered materials and their corresponding anisotropic electrical transport, magneto-transport, optoelectronic, thermoelectric, ferroelectric, and piezoelectric properties. The boom of new low-symmetry layered materials with high anisotropy could open up considerable possibilities for next-generation anisotropic multifunctional electronic devices.

Polarization Dependence of Charge Conduction in Conjugated Polymer Films Investigated with Time-Resolved Terahertz Spectroscopy

Room temperature Time-Domain Terahertz (TDS) and Time-Resolved Terahertz (TRTS) spectroscopic methods are employed to measure carrier mobility and charge generation efficiency in thin-film semiconductor polymers. Interrogation of the dependence on excitation and probe polarizations yields insight into the underlying material properties that guide charge transport. We apply THz polarization anisotropy probes to analyze charge conduction in preparations of the copolymer PCDTPT, consisting of alternating cyclopenta-dithiophene (donor) and thiadiazolo-pyridine (acceptor) units. Comparisons are made among films of different ordering and morphology, including aligned films prepared by blade coating, a near isotropic dropcast film, and isotropic liquid dispersion. They are further contrasted with their population dynamics ascertained through transient absorption and the traditional photoconductive polymer poly-3-hexylthiophene (P3HT). Polarization anisotropy is observed as preferential charge conduction along the backbone propagation direction of PCDTPT, with various factors disproportionately influencing directional mobility and charge pair yield. PCDTPT exhibits unexpectedly strong conductivity when isolated in toluene dispersion. Quantitative comparisons yield a better understanding of polaron/free-charge relaxation and transfer mechanisms and illustrate dynamics among photoexcited charge carriers and their motion and diffusion through different material morphologies.