Fully Printed Flexible Dual-Gate Carbon Nanotube Thin-Film Transistors with Tunable Ambipolar Characteristics for Complementary Logic Circuits

2D Dual Gate Field-Effect Transistor Enabled Versatile Functions

Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS2 ) asymmetric-dual-gate field-effect transistor (ADGFET) with an In2 Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec-1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W-1 , benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal-oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe₂) are fabricated. A high on-off ratio of 10⁸ and 10⁶, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of V_T-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the V_T-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits.

Interface Capture Effect Printing Atomic-Thick 2D Semiconductor Thin Films

2D semiconductor crystals offer the opportunity to further extend Moore's law to the atomic scale. For practical and low-cost electronic applications, directly printing devices on substrates is advantageous compared to conventional microfabrication techniques that utilize expensive photolithography, etching, and vacuum-metallization processes. However, the currently printed 2D transistors are plagued by unsatisfactory electrical performance, thick semiconductor layers, and low device density. Herein, a facile and scalable 2D semiconductor printing strategy is demonstrated utilizing the interface capture effect and hyperdispersed 2D nanosheet ink to fabricate high-quality and atomic-thick semiconductor thin-film arrays without additional surfactants. Printed robust thin-film transistors using 2D semiconductors (e.g., MoS₂ ) and 2D conductive electrodes (e.g., graphene) exhibit high electrical performance, including a carrier mobility of up to 6.7 cm² V^-1 s^-1 and an on/off ratio of 2 × 10⁶ at 25 °C. As a proof of concept, 2D transistors are printed with a density of ≈47 000 devices per square centimeter. In addition, this method can be applied to many other 2D materials, such as NbSe₂ , Bi₂ Se₃ , and black phosphorus, for printing diverse high-quality thin films. Thus, the strategy of printable 2D thin-film transistors provides a scalable pathway for the facile manufacturing of high-performance electronics at an affordable cost.

Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation

Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.

Inkjet-Printing-Based Density Profile Engineering of Single-Walled Carbon Nanotube Networks for Conformable High-On/Off-Performance Thin-Film Transistors

Random networks of single-walled carbon nanotubes (SWCNTs) offer new-form-factor electronics such as transparent, flexible, and intrinsically stretchable devices. However, the long-standing trade-off between carrier mobility and on/off ratio due to the coexistence of metallic and semiconducting nanotubes has limited the performance of SWCNT-random-network-based thin-film transistors (SWCNT TFTs), hindering their practical circuit-level applications. Methods for high-purity separation between metallic and semiconducting nanotubes have been proposed, but they require high cost and energy and are vulnerable to contamination and nanotube shortening, leading to performance degradation. Alternatively, additional structures have been proposed to reduce the off-state current, but they still compromise carrier mobility and suffer from inevitable expansion in device dimensions. Here, we propose a density-modulated SWCNT network using an inkjet-printing method as a facile approach that can achieve superior carrier mobility and a high on/off ratio simultaneously. By exploiting picoliter-scale drops on demand, we form a low-density channel network near the source and drain junctions and a high-density network at the middle of the channel. The modulated density profile forms a large band gap near the source and drain junctions that efficiently blocks electron injection under the reverse bias and a narrow band gap at the high-density area that facilitates the hole transport under the on-state bias. As a result, the density-modulated SWCNT TFTs show both high carrier mobility (27.02 cm² V^-1 s^-1) and a high on/off ratio (>10⁶). We also demonstrate all-inkjet-printed flexible inverter circuits whose gain is doubled by the density-modulated SWCNT TFTs, highlighting the feasibility of our approach for realizing high-performance flexible and conformable electronics.

An Inkjet-Printed PEDOT:PSS-Based Stretchable Conductor for Wearable Health Monitoring Device Applications

A stretchable conductor is one of the key components in soft electronics that allows the seamless integration of electronic devices and sensors on elastic substrates. Its unique advantages of mechanical flexibility and stretchability have enabled a variety of wearable bioelectronic devices that can conformably adapt to curved skin surfaces for long-term health monitoring applications. Here, we report a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-based stretchable polymer blend that can be patterned using an inkjet printing process while exhibiting low sheet resistance and accommodating large mechanical deformations. We have systematically studied the effect of various types of polar solvent additives that can help induce phase separation of PEDOT and PSS grains and change the conformation of a PEDOT chain, thereby improving the electrical property of the film by facilitating charge hopping along the percolating PEDOT network. The optimal ink formulation is achieved by adding 5 wt % ethylene glycol into a pristine PEDOT:PSS aqueous solution, which results in a sheet resistance of as low as 58 Ω/□. Elasticity can also be achieved by blending the above solution with the soft polymer poly(ethylene oxide) (PEO). Thin films of PEDOT:PSS/PEO polymer blends patterned by inkjet printing exhibits a low sheet resistance of 84 Ω/□ and can resist up to 50% tensile strain with minimal changes in electrical performance. With its good conductivity and elasticity, we have further demonstrated the use of the polymer blend as stretchable interconnects and stretchable dry electrodes on a thin polydimethylsiloxane (PDMS) substrate for photoplethysmography (PPG) and electrocardiography (ECG) recording applications. This work shows the potential of using a printed stretchable conducting polymer in low-cost wearable sensor patches for smart health applications.

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO2 Sensors

Development of large-area, low-cost, low-voltage, low-power consumption, flexible high-performance printed carbon nanotube thin-film transistors (TFTs) is helpful to promote their future applications in sensors and biosensors, wearable electronics, and the Internet of things. In this work, low-voltage, flexible printed carbon nanotube TFTs with a large-area and low-cost fabrication process were successfully constructed using ultrathin (∼3.6 nm) AlO_x thin films formed by plasma oxidation of aluminum as dielectrics and screen-printed silver electrodes as contact electrodes. The as-prepared bottom-gate/bottom-contact carbon nanotube TFTs exhibit a low leakage current (∼10^-10 A), a high charge carrier mobility (up to 9.9 cm² V^-1 s^-1), high on/off ratios (higher than 10⁵), and small subthreshold swings (80-120 mV/dec) at low operation voltages (from -1.5 to 1 V). At the same time, printed carbon nanotube TFTs showed a high response (ΔR/R = 99.6%) to NO₂ gas even at 16 ppm with a faster response and recovery speed (∼8 s, exposure to 0.5 ppm NO₂), a lower detection limit (0.069 ppm NO₂), and a low power consumption (0.86 μW, exposure to 16 ppm NO₂) at a gate voltage of 0.2 V at room temperature. Moreover, the printed carbon nanotube devices exhibited excellent mechanical flexibility and bias stress stability after 12,000 bending cycles at a radius of 5 mm and a bias stress test for 7200 s at a gate voltage of ±1 V, which originated from the ultrathin and compact AlO_x dielectric and the super adhesion force between screen-printed silver electrodes and polyethylene terephthalate substrates.

Flexible Carbon Nanotube Synaptic Transistor for Neurological Electronic Skin Applications

There is an increasing interest in the development of memristive or artificial synaptic devices that emulate the neuronal activities for neuromorphic computing applications. While there have already been many reports on artificial synaptic transistors implemented on rigid substrates, the use of flexible devices could potentially enable an even broader range of applications. In this paper, we report artificial synaptic thin-film transistors built on an ultrathin flexible substrate using high carrier mobility semiconducting single-wall carbon nanotubes. The synaptic characteristics of the flexible synaptic transistor including long-term/short-term plasticity, spike-amplitude-dependent plasticity, spike-width-dependent plasticity, paired-pulse facilitation, and spike-time-dependent plasticity have all been systematically characterized. Furthermore, we have demonstrated a flexible neurological electronic skin and its peripheral nerve with a flexible ferroelectret nanogenerator (FENG) serving as the sensory mechanoreceptor that generates action potentials to be processed and transmitted by the artificial synapse. In such neurological electronic skin, the flexible FENG sensor converts the tactile input (magnitude and frequency of force) into presynaptic action potential pulses, which are then passed to the gate of the synaptic transistor to induce change in its postsynaptic current, mimicking the modulation of synaptic weight in a biological synapse. Our neurological electronic skin closely imitates the behavior of actual human skin, and it allows for instantaneous detection of force stimuli and offers biological synapse-like behavior to relay the stimulus signals to the next stage. The flexible sensory skin could potentially be used to interface with skeletal muscle fibers for applications in neuroprosthetic devices.

Interfacial nanoconnections and enhanced mechanistic studies of metallic coatings for molecular gluing on polymer surfaces

Interfacial adhesion has been identified as being key for realizing flexible devices. Here, strong interfacial nanoconnections involving metallic patterns on polymer surfaces were fabricated via a molecular bonding approach, which includes UV-assisted grafting and molecular self-assembly. The interfacial characteristics of conductive patterns on liquid crystal polymer substrates were observed via transmission electron microscopy and atomic force microscopy infrared spectroscopy. The interfacial molecular layers have a thickness of 10 nm. Due to the successful molecular bonding modifications, interfacial adhesion has been sufficiently improved; in particular, the peel-related breakage sites will be located in the modified layers on the plastic surface beneath the interface after the metallic coatings are peeled off. Integrating X-ray photoelectron spectroscopy, infrared spectroscopy, and scanning electron microscopy results, the molecular bonding mechanism has been revealed: UV-assisted grafting and self-assembly result in the construction of interfacial molecular architectures, which provide nanosized connecting bridges between the metallic patterns and polymer surfaces. Such in-depth interfacial studies can offer insight into interfacial adhesion, which will impact on the development of metal/polymer composite systems and continue to push the improvement of flexible devices.

Overcoming Electrochemical Instabilities of Printed Silver Electrodes in All-Printed Ion Gel Gated Carbon Nanotube Thin-Film Transistors

Silver ink is the most widely used conductive material for printing electrodes in the fabrication of all-printed ion gel gated transistors because of their high conductivity and low cost. However, electrochemical instability of printed silver electrodes is generally one of the biggest issues, whether it is in air where silver gets oxidized or in a moisture environment where electrochemical migration occurs. Notwithstanding, the electrochemical stability of printed silver electrodes in ion gel medium has not been studied so far. In this work, we studied the electrochemical instabilities of printed silver electrodes in fully printed ion gel gated single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) and developed some strategies to overcome these issues. All-printed ion gel-based p-type SWCNT TFTs were employed to investigate the impact of electrochemical instabilities on the electrical behavior of printed SWCNT TFTs. The results have demonstrated that printed silver was unstable at anodic and cathodic polarization because of the corrosion by the ionic liquid. Besides, anodic corrosion of silver source/drain electrodes was shown to be responsible for the electrical failure of printed SWCNT TFTs in both the linear and saturated regime. These issues were completely resolved when preventing printed silver electrodes from coming into direct contact with ion gels. For example, ion gels were partially printed in device channels to avoid contacting the printed silver source and drain electrodes. At the same time, silver side-gate electrodes were replaced by inkjet-printed PEDOT:PSS electrodes to avoid gate electrode-related instabilities. Consequently, all-printed electrochemically stable SWCNT TFTs fabricated were obtained with enhanced performance of higher I_ON/I_OFF ratios (10⁵ to 10⁶), smaller subthreshold slopes (∼70 mV/dec), and smaller hysteresis (ΔV = 0.025 V) at gate voltages from 1.2 to -0.5 V. Additionally, the polarity of all-printed SWCNT TFTs was converted from the p-channel to ambipolar while achieving lower leakage currents.

Graphene and Carbon Nanotube Heterojunction Transistors with Individual Gate Control

Heterogeneously integrated nanomaterial devices show interesting characteristics for transistors and sensors due to their band diagram or steep material junctions. If these junctions and band alignments can be tuned by an electrical input bias, the device platform not only could be expanded but also could be used to explore fundamental characteristics. However, most reports on hetero-nanomaterial junctions use a global back-gate voltage, which makes it difficult to control band alignment at an interface. To explore device junctions, this study reports a laterally integrated heterojunction of graphene and a carbon nanotube (CNT) network film with individual gate electrodes to tune the band alignment corresponding to the Fermi level shift of graphene in contact with the semiconducting CNT network film. By developing the fabrication process, multiple gate structures are designed to apply a gate bias to CNTs and graphene separately. The threshold voltage shift of the CNT transistor depends on the gate voltage of graphene. Based on the thermionic emission theory, the barrier height between graphene and CNTs for both the conduction and valence band sides varies from 70 to 85 meV, with a linear change as a function of the applied gate voltage to graphene. Although the current Fermi level shift is small, this device platform may realize the exploration of fundamental properties and device concepts.

Flexible carbon nanotube Schottky diode and its integrated circuit applications

Carbon nanotubes (CNTs), a low-dimensional material currently popular in industry and academia, are promising candidates for addressing the limits of existing semiconductors. In particular, CNTs are attractive candidates for flexible electronic materials due to their excellent flexibility and potential applications. In this work, we demonstrate a flexible CNT Schottky diode based on highly purified, preseparated, solution-processed 99% semiconducting CNTs and an integrated circuit application using the CNT Schottky diodes. Notably, the fabricated flexible CNT diode can greatly modulate the properties of the contact formed between the semiconducting CNT and the anode electrode via the control gate bias, exhibiting a high rectification ratio of up to 2.5 × 10⁵. In addition, we confirm that the electrical performance of the CNT Schottky diodes does not significantly change after a few thousand bending/releasing cycles of the flexible substrate. Finally, integrated circuit (IC) applications of logic circuits (OR and AND gates) and an analog circuit (a half-wave rectifier) were presented through the use of flexible CNT Schottky diode combinations. The correct output responses are successfully achieved from the circuit applications; hence, we expect that our findings will provide a promising basis for electronic circuit applications based on CNTs.

We demonstrate a flexible Schottky diode based on highly purified, preseparated, 99% semiconducting carbon nanotubes and an integrated circuit application using the diodes.