Shape-Engineered Synthesis of Atomically Thin 1T-SnS2 Catalyzed by Potassium Halides

Dynamic coordination engineering of 2D PhenPtCl2 nanosheets for superior hydrogen evolution

Exploring the dynamic structural evolution of electrocatalysts during reactions represents a fundamental objective in the realm of electrocatalytic mechanism research. In pursuit of this objective, we synthesized PhenPtCl2 nanosheets, revealing a N2-Pt-Cl2 coordination structure through various characterization techniques. Remarkably, the electrocatalytic performance of these PhenPtCl2 nanosheets for hydrogen evolution reaction (HER) surpasses that of the commercial Pt/C catalyst across the entire pH range. Furthermore, our discovery of the dynamic coordination changes occurring in the N2-Pt-Cl2 active sites during the electrocatalytic process, as clarified through in situ Raman and X-ray photoelectron spectroscopy, is particularly noteworthy. These changes transition from Phen-Pt-Cl2 to Phen-Pt-Cl and ultimately to Phen-Pt. The Phen-Pt intermediate plays a pivotal role in the electrocatalytic HER, dynamically coordinating with Cl- ions in the electrolyte. Additionally, the unsaturated, two-coordinated Pt within Phen-Pt provides additional space and electrons to enhance both H+ adsorption and H2 evolution. This research illuminates the intricate dynamic coordination evolution and structural adaptability of PhenPtCl2 nanosheets, firmly establishing them as a promising candidate for efficient and tunable electrocatalysts.

Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor

The development and application of artificial intelligence have led to the exploitation of low-power and compact intelligent information-processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS2 /h-BN/CuInP2 S6 (CIPS)-based ferroelectric field-effect transistors (Fe-FETs) and utilized light-induced ferroelectric polarization reversal to achieve excellent memory properties and multi-functional sensing-memory-computing vision simulations are designed. The device exhibits a high on/off current ratio of over 105 , long retention time (>104  s), stable cyclic endurance (>350 cycles), and 128 multilevel current states (7-bit). In addition, fundamental synaptic plasticity characteristics are emulated including paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), long-term potentiation, and long-term depression. A ferroelectric optoelectronic reservoir computing system for the Modified National Institute of Standards and Technology (MNIST) handwritten digital recognition achieved a high accuracy of 93.62%. Furthermore, retina-like light adaptation and Pavlovian conditioning are successfully mimicked. These results provide a strategy for developing a multilevel memory and novel neuromorphic vision systems with integrated sensing-memory-processing.

High-performance multilayer WSe2/SnS2p-n heterojunction photodetectors by two step confined space chemical vapor deposition

Two-dimensional (2D) p-n heterojunctions have attracted great attention due to their outstanding properties in electronic and optoelectronic devices, especially in photodetectors. Various types of heterojunctions have been constituted by mechanical exfoliation and stacking. However, achieving controlled growth of heterojunction structures remains a tremendous challenge. Here, we employed a two-step KI-assisted confined-space chemical vapor deposition method to prepare multilayer WSe2/SnS2p-n heterojunctions. Optical characterization results revealed that the prepared WSe2/SnS2vertical heterostructures have clear interfaces as well as vertical heterostructures. The electrical and optoelectronic properties were investigated by constructing the corresponding heterojunction devices, which exhibited good rectification characteristics and obtained a high detectivity of 7.85 × 1012Jones and a photoresponse of 227.3 A W-1under visible light irradiation, as well as a fast rise/fall time of 166/440μs. These remarkable performances are likely attributed to the ultra-low dark current generated in the depletion region at the junction and the high direct tunneling current during illumination. This work demonstrates the value of multilayer WSe2/SnS2heterojunctions for applications in high-performance photodetectors.

Realization of black phosphorus-like PbSe monolayer on Au(111) via epitaxial growth

Lead selenide (PbSe) has been attracted a lot attention in fundamental research and industrial applications due to its excellent infrared optical and thermoelectric properties, toward reaching the two-dimensional limit. Herein, we realize the black phosphorus-like PbSe (α-phase PbSe) monolayer on Au(111) via epitaxial growth, where a characteristic rectangular superlattice of 5 Å × 9 Å corresponding to 1 × 2 reconstruction with respect to the pristine ofα-phase PbSe is observed by scanning tunneling microscopy. Corresponding density functional theory calculation confirmed the reconstruction and revealed the driven mechanism, the coupling between monolayer PbSe and Au(111) substrate. The metallic feature of differential conductance spectra as well as the transition of the density of states from semiconductor to metal further verified such coupling. As the unique anisotropic structure, our study provides a pathway towards the synthesis of BP-PbSe monolayer. In addition, it builds up an ideal platform for studying fundamental physics and also excellent prospects in PbSe-based device applications.

Metallic Metastable Hybrid 1T'/1T Phase Triggered Co,PSnS2 Nanosheets for High Efficiency Trifunctional Electrocatalyst

The development of trifunctional electrocatalyst for oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER) with deeply understanding the mechanism to enhance the electrochemical performance is still a challenging task. In this work, the distorted metastable hybrid-phase induced 1T'/1T Co,PSnS₂ nanosheets on carbon cloth (1T'/1T Co,PSnS₂ @CC) is prepared and examined. The density functional theoretical (DFT) calculation suggests that the distorted 1T'/1T Co,PSnS₂ can provide excellent conductivity and strong hydrogen adsorption ability. The electronic structure tuning and enhancement mechanism of electrochemical performance are investigated and discussed. The optimal 1T'/1T Co,PSnS₂ @CC catalyst exhibits low overpotential of ≈94 and 219.7 mV at 10 mA cm^-2 for HER and OER, respectively. Remarkably, the catalyst exhibits exceptional ORR activity with small onset potential value (≈0.94 V) and half-wave potential (≈0.87 V). Most significantly, the 1T'/1T Co,PSnS₂ ||Co,PSnS₂ electrolyzer required small cell voltages of ≈1.53, 1.70, and 1.82 V at 10, 100, and 400 mA cm^-2 , respectively, which are better than those of state-of-the-art Pt-C||RuO₂ (≈1.56 and 1.84 V at 10 and 100 mA cm^-2 ). The present study suggests a new approach for the preparation of large-scalable, high performance hierarchical 3D next-generation trifunctional electrocatalysts.

Fascinating Electrical Transport Behavior of Topological Insulator Bi2 Te3 Nanorods: Toward Electrically Responsive Smart Materials

Electrical conductivity and dielectric parameters are general inherent features of materials. Controlling these characteristics through applied bias will add a new dimension to regulate the dynamic response of smart materials. Here, a fascinating electrical transport behavior is observed in topological insulator (TI) Bi₂ Te₃ nanorods, which will play a vital role in intelligent materials or devices as a unit for information reception, processing or feedback. The Bi₂ Te₃ nanorod aggregates exhibit a monotonic resistance response to voltage, with observed four-fold change of electrical conductivity in a small range electric field of 1 V mm^-1 . The dielectric constant and dielectric loss of Bi₂ Te₃ nanorod composites also show strong dependences on bias voltage due to the unique electrical transport characteristics. The unique voltage-controlled electrical responses are attributed to the change of Fermi levels within the band structure of disordered TI nanorods, which are non-parallel to the applied electric field. The excellent controllable inherent characteristics through electric field endows Bi₂ Te₃ nanomaterials bright prospects for applications in smart devices and resistive random access memories.

Tailoring the Void Space Using Nanoreactors on Carbon Fibers to Confine SnS2 Nanosheets for Ultrastable Lithium/Sodium-Ion Batteries

Herein, a rational design of SnS₂ nanosheets confined into bubble-like carbon nanoreactors anchored on N,S doped carbon nanofibers (SnS₂ @C/CNF) is proposed to prepare the self-standing electrodes, which provides tunable void space on carbon fibers for the first time by introducing hollow carbon nanoreactors. The SnS₂ @C/CNF provides the stable support with greatly enhanced ion and electron transport, alleviates aggregation and volume expansion of SnS₂ nanosheets, and promotes the formation of abundant exposed edges and active sites. The volume balance between SnS₂ nanosheets and hollow carbon nanoreactors is reached to accommodate the expansion of SnS₂ during cycles by controlling the thickness of SnO₂ shells, which achieves the best space utilization. The doping of N,S elements enhances the wettability of the carbon nanofiber matrix to electrolyte and Li ions and further improves the electrical conductivity of the whole electrode. Thus, the SnS₂ @C/CNF benefits greatly in structural stability and pseudocapacitive capacity for improved lithium/sodium storage performance. As a result of these improvements, the self-standing SnS₂ @C/CNF film electrodes exhibit the highly stable capacity of 964.8 and 767.6 mAh g^-1 at 0.2 A g^-1 , and excellent capacity retention of 87.4% and 82.4% after 1000 cycles at high current density for lithium-ion batteries and sodium-ion batteries, respectively.

Accelerated discovery of superoxide-dismutase nanozymes via high-throughput computational screening

The activity of nanomaterials (NMs) in catalytically scavenging superoxide anions mimics that of superoxide dismutase (SOD). Although dozens of NMs have been demonstrated to possess such activity, the underlying principles are unclear, hindering the discovery of NMs as the novel SOD mimics. In this work, we use density functional theory calculations to study the thermodynamics and kinetics of the catalytic processes, and we develop two principles, namely, an energy level principle and an adsorption energy principle, for the activity. The first principle quantitatively describes the role of the intermediate frontier molecular orbital in transferring electrons for catalysis. The second one quantitatively describes the competition between the desired catalytic reaction and undesired side reactions. The ability of the principles to predict the SOD-like activities of metal-organic frameworks were verified by experiments. Both principles can be easily implemented in computer programs to computationally screen NMs with the intrinsic SOD-like activity.

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

Phase-Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Phase controllable synthesis of 2D materials is of significance for tuning related electrical, optical, and magnetic properties. Herein, the phase-controllable synthesis of tetragonal and hexagonal FeTe nanoplates has been realized by a rational control of the Fe/Te ratio in a chemical vapor deposition system. Using density functional theory calculations, it has been revealed that with the change of the Fe/Te ratio, the formation energy of active clusters changes, causing the phase-controllable synthesis of FeTe nanoplates. The thickness of the obtained FeTe nanoplates can be tuned down to the 2D limit (2.8 nm for tetragonal and 1.4 nm for hexagonal FeTe). X-ray diffraction pattern, transmission electron microscopy, and high resolution scanning transmission electron microscope analyses exhibit the high crystallinity of the as-grown FeTe nanoplates. The two kinds of FeTe nanoflakes show metallic behavior and good electrical conductivity, featuring 8.44 × 10⁴ S m^-1 for 9.8 nm-thick tetragonal FeTe and 5.45 × 10⁴ S m^-1 for 7.6 nm-thick hexagonal FeTe. The study provides an efficient and convenient route for tailoring the phases of FeTe nanoplates, which benefits to study phase-sensitive properties, and may pave the way for the synthesis of other multiphase 2D nanosheets with controllable phases.

Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Recently, the inherent piezoelectric properties of the 2D transition-metal dichalcogenides (TMDs) tin monosulfide (SnS) and tin disulfide (SnS₂) have attracted much attention. Thus the piezoelectricity of these materials has been theoretically and experimentally investigated for energy-harvesting devices. However, the piezoelectric output performance of the SnS₂- or SnS-based 2D thin film piezoelectric nanogenerator (PENG) is still relatively low, and the fabrication process is not suitable for practical applications. Here we report the formation of the SnS₂/SnS heterostructure thin film for the enhanced output performance of a PENG using atomic layer deposition (ALD). The piezoelectric response of the heterostructure thin film was increased by ∼40% compared with that of the SnS₂ thin film, attributed to large band offset induced by the heterojunction formation. Consequently, the output voltage and current density of the heterostructure PENG were 60 mV and 11.4 nA/cm² at 0.6% tensile strain, respectively. In addition, thickness-controllable large-area uniform thin-film deposition via ALD ensures that the reproducible output performance is achieved and that the output density can be lithographically adjusted depending on the applications. Therefore, the SnS₂/SnS heterostructure PENG fabricated in this work can be employed to develop a flexible energy-harvesting device or an attachable self-powered sensor for monitoring pulse and human body movement.

Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films

Though the positive role of alkali halides in realizing large area growth of transition metal dichalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS₂morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS₂. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS₂film growth assisted by NaCl results in ≈81% of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS₂monolayers. No evidence of alkali or halogen atoms were found in the composition analysis of the films. On the basis of Raman spectroscopy and photoluminescence measurements, the MoS₂films were found to be of good crystalline quality.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Controllable synthesis of SnS2 flakes and MoS2/SnS2 heterostructures by confined-space chemical vapor deposition

A halogen salt-assisted confined-space CVD method is used for the controllable synthesis of SnS₂ flakes, which are parallel to the substrate and have the characteristics of better crystallinity and fewer S vacancies.

Using a Novel Approach to Estimate Packing Density and Related Electrical Resistance in Multiwall Carbon Nanotube Networks

In this work, we use contrast image processing to estimate the concentration of multi-wall carbon nanotubes (MWCNT) in a given network. The fractal dimension factor (D) of the CNT network that provides an estimate of its geometrical complexity, is determined and correlated to network resistance. Six fabricated devices with different CNT concentrations exhibit D factors ranging from 1.82 to 1.98. The lower D-factor was associated with the highly complex network with a large number of CNTs in it. The less complex network, having the lower density of CNTs had the highest D factor of approximately 2, which is the characteristic value for a two-dimensional network. The electrical resistance of the thin MWCNT network was found to scale with the areal mass density of MWCNTs by a power law, with a percolation exponent of 1.42 and a percolation threshold of 0.12 μg/cm2. The sheet resistance of the films with a high concentration of MWCNTs was about six orders of magnitude lower than that of less dense networks; an effect attributed to an increase in the number of CNT-CNT contacts, enabling more efficient electron transfer. The dependence of the resistance on the areal density of CNTs in the network and on CNT network complexity was analyzed to validate a two-dimension percolation behavior.