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Huang ZT, Chien TW, Cheng CW, Li CC, Chen KP, Gwo S, Lu TC. Room-Temperature Gate Voltage Modulation of Plasmonic Nanolasers. ACS NANO 2023; 17:6488-6496. [PMID: 36989057 DOI: 10.1021/acsnano.2c11716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Stable electrical modulation of plasmonic nanolasers is achieved on a hybrid graphene-insulator-metal (GIM) platform at room temperature. To support surface plasmon polariton (SPP) resonance, a zinc oxide (ZnO) nanowire is placed on the GIM platform to create a plasmonic cavity with a compact mode volume of 2.6 × 10-2 λ3, and the graphene layer is used as a transparent electrode for electrical modulation. When a gate voltage is applied, the surface electron density of Al varied, which results in the shifting of its plasma frequency and thus affects its SPP dispersion. In particular, this variation strongly changes the internal loss of the SPP mode; thus, the lasing thresholds of the ZnO nanowire plasmonic nanolasers on the GIM platform can be modulated by the gate voltage. This study demonstrates the gate voltage modulation of ZnO nanowire plasmonic nanolasers on a GIM platform at room temperature. These nanolasers can exhibit ultrahigh modulation speed on the order of terahertz. Accordingly, plasmonic nanolasers with gate voltage modulation have high potential for plasmonic circuit applications with high operation speed and versatility.
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Affiliation(s)
- Zhen-Ting Huang
- Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ting-Wei Chien
- Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chang-Wei Cheng
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Cheng-Ching Li
- Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Kuo-Ping Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shangjr Gwo
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tien-Chang Lu
- Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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2
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Yin B, Jia H, Wang H, Chen R, Xu L, Zhao YS, Zhang C, Yao J. Magnetic-Field-Driven Reconfigurable Microsphere Arrays for Laser Display Pixels. ACS NANO 2022; 17:1187-1195. [PMID: 36410359 DOI: 10.1021/acsnano.2c08766] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Reconfigurable microlaser arrays are essential to the construction of display panels where the individual pixel should be highly tunable in resonance mode, optical polarization, and lasing wavelength upon external control signals. Here we demonstrate a facile yet reliable approach to fabrication of organic microlaser pixels, in which the assembly of microsphere arrays on each pixel is controlled according to the near-field magnetostatic confinement. The geometrical configuration of diamagnetic microspheres could be readily modulated with the near-field potential traps by using the external field to alternate the saturation magnetization of the underneath micromagnet. The motion of microspheres can be modulated among several states upon applied field, and the reconfigurable microsphere array is thus achieved with high spatial precision and rapid temporal response. Moreover, both isolated and coupled spheres serve as low-threshold microlasers with tunable optical resonance modes, whereas the switching between the vertical and horizontal alignments of coupled spheres manipulates the polarization of lasing outputs. By repeating the magnetostatic confinement on the same substrate, the full-color laser display pixels with magnetically tunable color expression capability are successfully achieved.
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Affiliation(s)
- Baipeng Yin
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Hao Jia
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hong Wang
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Chen
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lixin Xu
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Sheng Zhao
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chuang Zhang
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiannian Yao
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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3
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Zhou X, Jiang M, Xu K, Liu M, Sha S, Cao S, Kan C, Shi DN. Electrically driven single microwire-based single-mode microlaser. LIGHT, SCIENCE & APPLICATIONS 2022; 11:198. [PMID: 35764618 PMCID: PMC9240044 DOI: 10.1038/s41377-022-00874-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Revised: 06/05/2022] [Accepted: 06/07/2022] [Indexed: 06/15/2023]
Abstract
Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.
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Affiliation(s)
- Xiangbo Zhou
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China.
| | - Kai Xu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Maosheng Liu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Shulin Sha
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Shuiyan Cao
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China
| | - Caixia Kan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China.
| | - Da Ning Shi
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing, 211106, China.
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Xie D, Yin K, Yang ZJ, Huang H, Li X, Shu Z, Duan H, He J, Jiang J. Polarization-perceptual anisotropic two-dimensional ReS 2 neuro-transistor with reconfigurable neuromorphic vision. MATERIALS HORIZONS 2022; 9:1448-1459. [PMID: 35234765 DOI: 10.1039/d1mh02036f] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization is a common and unique phenomenon in nature, which reveals more camouflage features of objects. However, current polarization-perceptual devices based on conventional physical architectures face enormous challenges for high-performance computation due to the traditional von Neumann bottleneck. In this work, a novel polarization-perceptual neuro-transistor with reconfigurable anisotropic vision is proposed based on a two-dimensional ReS2 phototransistor. The device exhibits excellent photodetection ability and superior polarization sensitivity due to its direct band gap semiconductor property and strong anisotropic crystal structure, respectively. The fascinating polarization-sensitive neuromorphic behavior, such as polarization memory consolidation and reconfigurable visual imaging, are successfully realized. In particular, the regulated polarization responsivity and dichroic ratio are successfully emulated through our artificial compound eyes. More importantly, two intriguing polarization-perceptual applications for polarized navigation with reconfigurable adaptive learning abilities and three-dimensional visual polarization imaging are also experimentally demonstrated. The proposed device may provide a promising opportunity for future polarization perception systems in intelligent humanoid robots and autonomous vehicles.
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Affiliation(s)
- Dingdong Xie
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Kai Yin
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Zhong-Jian Yang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Han Huang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Xiaohui Li
- School of Physics and Information Technology, Shanxi Normal University, Xi'an 710119, P. R. China
| | - Zhiwen Shu
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Huigao Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
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5
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Tang H, Luo F, Cui Z, Xiao Y, Xu W, Zhu Z, Chen S, Wang X, Liu Y, Wang J, Peng G, Qin S, Zhu M. Electrically Controlled Wavelength-Tunable Photoluminescence from van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:19869-19877. [PMID: 35438495 DOI: 10.1021/acsami.2c02321] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Achieving facile control of the wavelength of light emitters is of great significance for many key applications in optoelectronics and photonics, including on-chip interconnection, super-resolution imaging, and optical communication. The Joule heating effect caused by electric current is widely applied in modulating the refractive index of silicon-based waveguides for reconfigurable nanophotonic circuits. Here, by utilizing localized Joule heating in the biased graphene device, we demonstrate electrically controlled wavelength-tunable photoluminescence (PL) from vertical van der Waals heterostructures combined by graphene and two-dimensional transition metal dichalcogenides (2D-TMDCs). By applying a moderate electric field of 6.5 kV·cm-1 to the graphene substrate, the PL wavelength of 2D-TMDCs exhibits a continuous tuning from 662 to 690 nm, corresponding to a bandgap reduction of 76 meV. The electric control is highly reversible during sweeping the bias back and forth. The temperature dependence of Raman and PL spectroscopy reveals that the current-induced local Joule heating effect plays a leading role in reducing the optical direct bandgap of TMDCs. The bias-dependent optical reflectivity and time-resolved photoluminescence measurements show a consistent reduction of the optical band gap of 2D-TMDCs and increased PL lifetimes with the electric field over the heterostructures. Moreover, we demonstrate the consistent device operation from 2D materials grown by chemical vapor deposition, showing great advantages for the scalability.
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Affiliation(s)
- Hongwu Tang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Fang Luo
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Ziru Cui
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yang Xiao
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Wei Xu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shula Chen
- School of Material Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Xiao Wang
- School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, Changsha, Hunan 410083, China
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Gang Peng
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
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6
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Zhao H, Zhao X, Zhang X, Cui Z, Ou-Yang Y, Xie M, Zheng M, Guan X, Wu L, Zhou X, Li L, Zhang Y, Li Y, Jiang Y, Lu W, Zhu X, Peng C, Wang X, Wang S, Zhuang X. Erbium chloride silicate-based vertical cavity surface-emitting laser at the near-infrared communication band. OPTICS LETTERS 2022; 47:1610-1613. [PMID: 35363690 DOI: 10.1364/ol.446752] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Accepted: 01/07/2022] [Indexed: 06/14/2023]
Abstract
Silicon-based integrated optoelectronics has become a hotspot in the field of computers and information processing systems. An integrated coherent light source on-chip with a small footprint and high efficiency is one of the most important unresolved devices. Here, we realize a silicon-based vertical cavity surface-emitting laser in the near-infrared communication band by making efforts in both controlled preparation of high-gain erbium silicate materials and novel design of high optical feedback microcavity. Single-crystal erbium/ytterbium silicate microplates with erbium concentration as high as 5 × 1021 cm-3 are controlled prepared by a chemical vapor deposition method. They can produce strong luminescence with quite a long lifetime (2.3 ms) at the wavelength of 1.5 μm. By embedding the erbium silicate microplates between two dielectric Bragg reflectors, we construct a vertical cavity surface-emitting laser at 1.5 μm, with a lasing threshold as low as 20 μJ/cm2 and Q factor of nearly 2000. Our study provides a new pathway to achieve a sub-micrometer coherent light source for optical communication.
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7
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Yang X, Wu R, Zheng B, Luo Z, You W, Liu H, Li L, Zhang Y, Tan Q, Liang D, Chen Y, Qu J, Yi X, Wang X, Zhou J, Duan H, Wang S, Chen S, Pan A. A Waveguide-Integrated Two-Dimensional Light-Emitting Diode Based on p-Type WSe 2/n-Type CdS Nanoribbon Heterojunction. ACS NANO 2022; 16:4371-4378. [PMID: 35191308 DOI: 10.1021/acsnano.1c10607] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenides (TMDs) have emerged as two-dimensional (2D) building blocks to construct nanoscale light sources. To date, a wide array of TMD-based light-emitting devices (LEDs) have been successfully demonstrated. Yet, their atomically thin and planar nature entails an additional waveguide/microcavity for effective optical routing/confinement. In this sense, integration of TMDs with electronically active photonic nanostructures to form a functional heterojunction is of crucial importance for 2D optoelectronic chips with reduced footprint and higher integration capacity. Here, we report a room-temperature waveguide-integrated light-emitting device based on a p-type monolayer (ML) tungsten diselenide (WSe2) and n-type cadmium sulfide (CdS) nanoribbon (NR) heterojunction diode. The hybrid LED exhibited clear rectification under forward biasing, giving pronounced electroluminescence (EL) at 1.65 eV from exciton resonances in ML WSe2. The integrated EL intensity against the driving current shows a superlinear profile at a high current level, implying a facilitated carrier injection via intervalley scattering. By leveraging CdS NR waveguides, the WSe2 EL can be efficiently coupled and further routed for potential optical interconnect functionalities. Our results manifest the waveguided LEDs as a dual-role module for TMD-based optoelectronic circuitries.
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Affiliation(s)
- Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Rong Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Wenxia You
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Lihui Li
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Qin Tan
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Jun Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Huigao Duan
- College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China
| | - Shuangyin Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
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8
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Nanoribbons of 2D materials: A review on emerging trends, recent developments and future perspectives. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2021.214335] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
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Lv Y, Xiong Z, Li Y, Li D, Liang J, Yang Y, Xiang F, Xiang S, Zhao YS, Zhang Z. Framework-Shrinkage-Induced Wavelength-Switchable Lasing from a Single Hydrogen-Bonded Organic Framework Microcrystal. J Phys Chem Lett 2022; 13:130-135. [PMID: 34962396 DOI: 10.1021/acs.jpclett.1c03855] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Porous organic materials (POMs) have shown great potential for fabricating tunable miniaturized lasers. However, most pure-POM micro/nanolasers are achieved via coordination interactions, during which strong charge exchanges inevitably destroy the intrinsic gain property and even lead to optical quenching, hindering their practical applications. Herein, we reported on an approach to realize hydrogen-bonded organic framework (HOF)-based in situ wavelength-switchable lasing based on the framework-shrinkage effect. A flexible HOF with reversible framework shrinkage was constructed from gain blocks with multiple rotors. The framework shrinkage of the HOF induced the in situ regulation on the conformation and conjugation degree of gain blocks, leading to distinct energy-level structures with blue/green-color gain emissions. Inspired by this, the in situ wavelength-switchable lasing from HOF microcrystals was achieved through reversibly controlling the framework shrinkage via the absorption/desorption of guests. The results offer useful insight into the use of flexible HOFs for exploiting miniaturized lasers with on-demand nanophotonics performance.
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Affiliation(s)
- Yuanchao Lv
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Zhile Xiong
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Yunbin Li
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Delin Li
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Jiashuai Liang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Yisi Yang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Fahui Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Shengchang Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
| | - Yong Sheng Zhao
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhangjing Zhang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China
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10
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Gao Y, Li X, Liu W, Xing X, Long H, Wang K, Wang B, Lu P. Highly Tunable Enhancement and Switching of Nonlinear Emission from All-Inorganic Lead Halide Perovskites via Electric Field. NANO LETTERS 2021; 21:10230-10237. [PMID: 34859670 DOI: 10.1021/acs.nanolett.1c03142] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Herein, we demonstrate a highly tunable enhancement and switching of nonlinear emission from all-inorganic metal halide perovskites based on an asymmetrically biased metal-insulator-semiconductor (MIS) structure. We achieve 2 orders of magnitude enhancement of the two-photon-pumped photoluminescence (TPL) from CsPbBr3 microplates with the MIS structure, due to comprehensive effects including localized field effect, trap-filling effect, and collection enhancement. In particular, taking advantage of electric-field-induced passivation/activation of Br vacancies, we realize highly tunable TPL enhancement, ranging from ∼61.2-fold to ∼370.3-fold. Moreover, we demonstrate an efficient modulation of the two-photon-pumped lasing from the MIS structure, which exhibits electric field induced switching with a high on/off ratio of 67:1. This work has opened new avenues for steering carrier transport and nonlinear emission in lead halide perovskites, which shows great promise for realizing high-efficiency and tunable nonlinear nanophotonic devices.
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Affiliation(s)
- Yan Gao
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaohong Li
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
| | - Weiwei Liu
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiangyuan Xing
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hua Long
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Kai Wang
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Bing Wang
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Peixiang Lu
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
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11
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Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C. Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. ACS NANO 2021; 15:9126-9133. [PMID: 33970600 DOI: 10.1021/acsnano.1c02425] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.
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Affiliation(s)
- Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Nikita Gagrani
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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12
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Tang K, Jiang M, Wan P, Kan C. Continuous-wave operation of an electrically pumped single microribbon based Fabry-Perot microlaser. OPTICS EXPRESS 2021; 29:983-995. [PMID: 33726323 DOI: 10.1364/oe.412475] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2020] [Accepted: 12/12/2020] [Indexed: 06/12/2023]
Abstract
Fabry-Perot (FP) mode microlasers have been popularized and applied widely in on-chip coherent light sources because of the unique advantages of directional output emission. In this work, a heterojunction light-emitting diode (LED) made of a Ga-doped ZnO (ZnO:Ga) microribbon and p-GaAs template is fabricated. And its electroluminescence characteristics of strong coupling of exciton-photon and polariton lasing, in the blue-violet spectrum, were demonstrated under continuous-wave operation of an electrical injection. In the device structure, a single microribbon with a rectangular-shaped cross section can achieve the FP-mode lasing action by the optical oscillation between the two lateral sides of the microcrystals in the ultraviolet spectrum. As the reverse-current is below the threshold value, the device can have radiative polaritonic lighting directly from bilateral sides of the microribbon, yielding strong coupling between excitons and FP-mode microresonator. And the exciton-polariton coupling strengths characterized by a Rabi splitting energy were extracted to be 500 meV. Further, when the input current increased more than a certain value, strong laser illuminating developed as two sharp peaks at the lower energy shoulder of the spontaneous emission peak, and these oscillating modes can dominate the waveguide EL spectra. The experimental results can provide us with further unambiguous evidence that the lasing is originated from the polariton resonances for the microribbon with strong exciton-polariton coupling. Since single microribbon based optical FP-mode microresonators do not require additional feedback mirrors, their compact size and resulting low thresholds make them a powerful candidate to construct on-chip coherent light sources for future integrated nanophotonic and optoelectronic circuitry.
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13
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Deka SS, Pan SH, Jiang S, El Amili A, Vallini F, Gu Q, Fainman Y. Real-time dynamic wavelength tuning and intensity modulation of metal-clad nanolasers. OPTICS EXPRESS 2020; 28:27346-27357. [PMID: 32988031 DOI: 10.1364/oe.400881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2020] [Accepted: 08/20/2020] [Indexed: 06/11/2023]
Abstract
To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstrate in-situ dynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser's emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge.
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14
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Qiao C, Zhang C, Zhou Z, Dong H, Du Y, Yao J, Zhao YS. A Photoisomerization‐Activated Intramolecular Charge‐Transfer Process for Broadband‐Tunable Single‐Mode Microlasers. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202007361] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Chan Qiao
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Chunhuan Zhang
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
| | - Zhonghao Zhou
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Haiyun Dong
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
| | - Yuxiang Du
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Jiannian Yao
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Yong Sheng Zhao
- Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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15
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Qiao C, Zhang C, Zhou Z, Dong H, Du Y, Yao J, Zhao YS. A Photoisomerization-Activated Intramolecular Charge-Transfer Process for Broadband-Tunable Single-Mode Microlasers. Angew Chem Int Ed Engl 2020; 59:15992-15996. [PMID: 32519468 DOI: 10.1002/anie.202007361] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/21/2020] [Indexed: 01/14/2023]
Abstract
Miniaturized lasers with high spectral purity and wide wavelength tunability are crucial for various photonic applications. Here we propose a strategy to realize broadband-tunable single-mode lasing based on a photoisomerization-activated intramolecular charge-transfer (ICT) process in coupled polymer microdisk cavities. The photoisomerizable molecules doped in the polymer microdisks can be quantitatively transformed into a kind of laser dye with strong ICT character by photoexcitation. The gain region was tailored over a wide range through the self-modulation of the optically activated ICT isomers. Meanwhile, the resonant modes shifted with the photoisomerization because of a change in the effective refractive index of the polymer microdisk cavity. Based on the synergetic modulation of the optical gain and microcavity, we realized the broadband tuning of the single-mode laser. These results offer a promising route to fabricate broadband-tunable microlasers towards practical photonic integrations.
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Affiliation(s)
- Chan Qiao
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chunhuan Zhang
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhonghao Zhou
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haiyun Dong
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuxiang Du
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiannian Yao
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yong Sheng Zhao
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, 100049, China
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