Anisotropic Picosecond Spin-Photocurrent from Weyl Semimetal WTe2

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

Highly Efficient Spintronic Terahertz Emitter Utilizing a Large Spin Hall Conductivity of Type-II Dirac Semimetal PtTe2

The remarkable spin-charge interconversion ability of transition metal dichalcogenides (TMDs) makes them promising candidates for spintronic applications. Nevertheless, their potential as spintronic terahertz (THz) emitters (STEs) remains constrained mainly due to their sizable resistivity and low spin Hall conductivity (SHC), which consequently result in modest THz emission. In this work, the TMD PtTe2, a type-II Dirac semimetal is effectively utilized to develop efficient STEs. This high efficiency primarily results from the large SHC of PtTe2, stemming from its low resistivity and significant spin-to-charge conversion efficiency, attributed to surface states and the local Rashba effect in addition to the inverse spin Hall effect. Remarkably, the peak THz emission from PtTe2/Co-STE exceeds that of Pt/Co-STE by ∼15% and is nearly double that of a similarly thick Pt/Co-STE. The efficient THz emission in the PtTe2/Co heterostructure opens new possibilities for utilizing the semimetal TMDs for developing THz emitters.

Investigating active area dependent high performing photoresponse through thin films of Weyl Semimetal WTe2

WTe₂ is one of the wonder layered materials, displays interesting overlapping of electron-hole pairs, opening of the surface bandgap, anisotropy in its crystal structure and very much sought appealing material for room temperature broadband photodection applications. Here we report the photoresponse of WTe₂ thin films and microchannel devices fabricated on silicon nitride substrates. A clear sharp rise in photocurrent observed under the illumination of visible (532 nm) and NIR wavelengths (1064 nm). The observed phoresponse is very convincing and repetitive for ON /OFF cycles of laser light illumination. The channel length dependence of photocurrent is noticed for few hundred nanometers to micrometers. The photocurrent, rise & decay times, responsivity and detectivity are studied using different channel lengths. Strikingly microchannel gives few orders of greater responsivity compared to larger active area investigated here. The responsivity and detectivity are observed as large as 29 A/W and 3.6 × 10⁸ Jones respectively. The high performing photodetection properties indicate that WTe₂ can be used as a broad band material for future optoelectronic applications.

Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal

Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe₂. Our PtSe₂ THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe₂ THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Network analysis of Weyl semimetal photogalvanic systems

We develop a general methodology capable of analyzing the response of Weyl semimetal (WSM) photogalvanic networks. Both single-port and multiport configurations are investigated via extended versions of Norton's theorem. An equivalent circuit model is provided where the photogalvanic currents induced in these gapless topological materials can be treated as polarization-dependent sources. To illustrate our approach, we carry out transport simulations in arbitrarily shaped configurations involving pertinent WSMs. Our analysis indicates that the photogalvanic currents collected in a multi-electrode system directly depend on the geometry of the structure as well as on the excitation and polarization pattern of the incident light. Our results could be helpful in designing novel optoelectronic systems that make use of the intriguing features associated with WSMs.

A Universally EDTA-Assisted Synthesis of Polytypic Bismuth Telluride Nanoplates with a Size-Dependent Enhancement of Tumor Radiosensitivity and Metabolism In Vivo

Bismuth telluride (Bi₂Te₃) is an available thermoelectric material with the lowest band gap among bismuth chalcogenides, revealing a broad application in photocatalysis. Unfortunately, its size and morphology related to a radio-catalysis property have rarely been explored. Herein, an ethylenediaminetetraacetic acid (EDTA)-assisted hydrothermal strategy was introduced to synthesize polytypic Bi₂Te₃ nanoplates (BT NPs) that exhibit size-dependent radio-sensitization and metabolism characteristics in vivo. By simply varying the molar ratio of EDTA/Bi³⁺ during the reaction, BT NPs with different sizes and morphologies were obtained. EDTA acting as chelating agent and "capping" agent contributed to the homogeneous growth of BT NPs by eliminating dangling bonds and reducing the surface energy of different facets. Further analyzing the size-dependent radio-sensitization mechanism, larger-sized BT NPs generated holes that preferentially catalyzed the conversion of OH^- to ·OH when irradiated with X-rays, while the smaller-sized BT NPs exhibited faster decay kinetics producing higher ¹O₂ levels to enhance radiotherapy effects. A metabolomic analysis revealed that larger-sized BT NPs were oxidized into Bi(O_x) in the liver via a citrate cycle pathway, whereas smaller-sized BT NPs accumulated in the kidney and were excreted in urine in the form of ions by regulating the metabolism of glutamate. In a cervical cancer model, BT NPs combined with X-ray irradiation significantly antagonized tumor suppression through the promotion of apoptosis in tumor cells. Consequently, in addition to providing a prospect of BT NPs as an efficient radio-sensitizer to boost the tumor radiosensitivity, we put forth a strategy that can be universally applied in synthesizing metal chalcogenides for catalysis-promoted radiotherapy.

Ultraefficient Terahertz Emission Mediated by Shift-Current Photovoltaic Effect in Layered Gallium Telluride

Generating terahertz waves using thin-layered materials holds great potential for the realization of integrated terahertz devices. However, previous studies have been limited by restricted radiation intensity and finite efficiency. Exploiting materials with higher efficiency for terahertz emission has attracted increasing interest worldwide. Herein, with visible-light excitation, a thin-layered GaTe film is demonstrated to be a promising emitter of terahertz radiation induced by the shift-current photovoltaic effect. Through theoretical calculations, a transient charge-transfer process resulting from the asymmetric structure of GaTe is shown to be the origin of an ultrafast shift current. Furthermore, it was found that the amplitude of the resulting terahertz signals can be manipulated by both the fluence of the pump laser and the orientation of the sample. Such high emission efficiency from the shift current indicates that the layered material (GaTe) is an excellent candidate for photovoltaics and terahertz emitters.

Weyl semimetal orthorhombic Td-WTe2as an electrode material for sodium- and potassium-ion batteries

Alkali metals such as sodium and potassium have become promising candidates for the next generation of monovalent-ion batteries. However, a challenge for these battery technologies lies in the development of electrode materials that deliver high capacity and stable performance even at high cycling currents. Here we study orthorhombic tungsten ditelluride or Td-WTe₂as an electrode material for sodium- (SIB) and potassium-ion batteries (KIB) in propylene carbonate (PC) based electrolyte. Results show that despite larger Shannon's radius of potassium-ions and their sluggish diffusion in Td-WTe₂due to higher overpotential, at 100 mA.g^-1KIB-half cells showed higher cycling stability and low capacity decay of 4% versus 16% compared to SIB-half cells. Likewise, in a rate capability test at 61^stcycle (at 50 mA.g^-1), the KIB-half cells yielded charge capacity of 172 mAh.g^-1versus 137 mAh.g^-1of SIB-half cells. The superior electrochemical performance of Td-WTe₂electrode material in KIB-half cells is explained based on the concept of Stokes' radius-smaller desolvation activation energy resulted in higher mobility of potassium-ions in PC-based electrolyte. In addition, the likely mechanisms of electrochemical insertion and extraction of Na- and K-ions in Td-WTe₂are also discussed.

Self-Powered Filterless On-Chip Full-Stokes Polarimeter

The detection of polarization states of light is essential in photonic and optoelectronic devices. Currently, the polarimeters are usually constructed with the help of waveplates or a comprehensive metasurface, which will inevitably increase the fabrication complexity and unnecessary energy loss. Here, we have successfully demonstrated a self-powered filterless on-chip full-Stokes polarimeter based on a single-layer MoS₂/few-layer MoS₂ homojunction. Combining the built-in electric field enhanced circular photogalvanic effect with the intrinsic optical anisotropy of MoS₂ between in-plane and out-of-plane directions, the device is able to conveniently sense four Stokes parameters of incident light at zero bias without requiring an extra filtering layer and can function in the wavelength range of 650-690 nm with acceptable average errors. Besides, this homojunction device is easy to integrate with silicon-based chips and could have much smaller sizes than metasurface based polarimeters. Our study thus provides an excellent paradigm for high-performance on-chip filterless polarimeters.

Outstanding spin-transport properties of a flexible phosphorene photodetector driven by the photogalvanic effect under mechanical strains

Monolayer phosphorene has outstanding spintronic properties including a nanosecond spin lifetime, and micrometer spin relaxation length, combined with excellent mechanical flexibility, making it rather attractive in low-dimensional flexible spintronic devices. However, knowledge on the spin-transport properties of phosphorene under mechanical strain is currently very limited. Here, we study the transport properties of the spin-polarized photocurrent in the flexible Ni-phosphorene-Ni photodetector, which is driven by the photogalvanic effect (PGE) under mechanical tension stress and bending. Broadband PGE photocurrent is generated at zero bias under the illumination of linearly polarized light due to the broken inversion symmetry of the photodetector. Remarkable spin-transport performances including the fully spin-polarized photocurrent, perfect spin-valve effect, and enhanced pure spin current are generated in a broad visible range by applying appropriate mechanical tension stress or bending. Our results indicate that the PGE-driven phosphorene-based photodetector has promising applications in flexible and low-power spintronic devices.

Roadmap of spin-orbit torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Strain-enhanced giant Rashba spin splitting in ultrathin KTaO3 films for spin-polarized photocurrents

Strong Rashba effects at semiconductor surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, we show through first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO₃ (KTO) (001) films with the most stable surfaces. When increasing the in-plane compressive strain to −5%, the Rashba spin splitting energy reaches E_R = 140 meV, corresponding to the Rashba coupling constant α_R = 1.3 eV Å. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Further calculations show that the giant Rashba spin splitting can remain or be enhanced when capping layer and/or Si substrate are added, and a SrTiO₃ capping can make the Rashba spin splitting energy reach the record 190 meV. Furthermore, it is elucidated that strong circular photogalvanic effect can be achieved for spin-polarized photocurrents in the KTO thin films or related heterostructures, which is promising for future spintronic and optoelectronic applications.

Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO₃ (KTO) (001) films.