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Kim SJ, Heo M, Kim SI, Park H, Kim JY, Seo WS, Kim HS. Br doping-induced evolution of the electronic band structure in dimorphic and hexagonal SnSe 2 thermoelectric materials. RSC Adv 2024; 14:7081-7087. [PMID: 38414988 PMCID: PMC10898343 DOI: 10.1039/d3ra07751a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 02/11/2024] [Indexed: 02/29/2024] Open
Abstract
SnSe2 with its layered structure is a promising thermoelectric material with intrinsically low lattice thermal conductivity. However, its poor electronic transport properties have motivated extensive doping studies. Br doping effectively improves the power factor and converts the dimorphic SnSe2 to a fully hexagonal structure. To understand the mechanisms underlying the power factor improvement of Br-doped SnSe2, the electronic band parameters of Br-doped dimorphic and hexagonal SnSe2 should be evaluated separately. Using the single parabolic band model, we estimate the intrinsic mobility and effective mass of the Br-doped dimorphic and hexagonal SnSe2. While Br doping significantly improves the mobility of dimorphic SnSe2 (with the dominant hexagonal phase), it results in a combination of band convergence and band flattening in fully hexagonal SnSe2. Br-doped dimorphic SnSe2 is predicted to exhibit higher thermoelectric performance (zT ∼0.23 at 300 K) than Br-doped fully hexagonal SnSe2 (zT ∼0.19 at 300 K). Characterisation of the other, currently unidentified, structural phases of dimorphic SnSe2 will enable us to tailor the thermoelectric properties of Br-doped SnSe2.
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Affiliation(s)
- Se-Jun Kim
- Department of Materials Science and Engineering, University of Seoul Seoul 02504 South Korea
| | - Minsu Heo
- Department of Materials Science and Engineering, University of Seoul Seoul 02504 South Korea
| | - Sang-Il Kim
- Department of Materials Science and Engineering, University of Seoul Seoul 02504 South Korea
| | - Hyunjin Park
- Department of Materials Science and Engineering, University of Seoul Seoul 02504 South Korea
| | - Jeong-Yeon Kim
- Department of Materials Science and Engineering, University of Seoul Seoul 02504 South Korea
| | - Won-Seon Seo
- Department of Materials Science and Engineering, Yonsei University Seoul 03722 South Korea
| | - Hyun-Sik Kim
- Department of Materials Science and Engineering, University of Seoul Seoul 02504 South Korea
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Pang D, Shi P, Lin L, Xie K, Deng C, Zhang Z. Adsorption properties of small gas molecules on SnSe 2 monolayer supported with transition metal: first-principles calculations. Phys Chem Chem Phys 2023; 25:6626-6635. [PMID: 36789606 DOI: 10.1039/d2cp04753e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/16/2023]
Abstract
The adsorption properties of CH4, H2S, SO2, CO, H2O and NO molecules on transition metal-supported SnSe2 surface are investigated by the first-principles method. The calculation results show that the transition metal (TM = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu) has the lowest adsorption energy when supporting at the Sn site of SnSe2, indicating the system is relatively stable. Also, we find that CH4, SO2 and H2O molecules tend to adsorb on Sc-supported SnSe2 surface, H2S and NO molecules prefer to adsorb on V-supported SnSe2 surface, while CO molecule and Fe-supported SnSe2 surfaces have strong interaction. And, CH4, H2S and H2O molecules act as donors to provide electrons to the substrate, while SO2, CO and NO molecules act as acceptors to gain electrons from the substrate. An analysis of charge difference density and density of states reveals that the adsorption energies of gas molecules are related to charge transfer and orbital hybridization. We hope that this work not only provides a promising sensor material, but also provides a new idea for the rational design of two-dimensional materials.
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Affiliation(s)
- Donglin Pang
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, China.
| | - Pei Shi
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, China.
| | - Long Lin
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, China. .,School of Mathematics and Informatics, Henan Polytechnic University, Jiaozuo City, 454003, Henan Province, China
| | - Kun Xie
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, China.
| | - Chao Deng
- School of Physics Electronic Information, Henan Polytechnic University, Jiaozuo City, 454003, Henan Province, China.
| | - Zhanying Zhang
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, China.
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Kumar M, Rani S, Singh Y, Gour KS, Singh VN. Tin-selenide as a futuristic material: properties and applications. RSC Adv 2021; 11:6477-6503. [PMID: 35423185 PMCID: PMC8694900 DOI: 10.1039/d0ra09807h] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Accepted: 12/26/2020] [Indexed: 12/14/2022] Open
Abstract
SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.
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Affiliation(s)
- Manoj Kumar
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Sanju Rani
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Yogesh Singh
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Kuldeep Singh Gour
- Optoelectronics Convergence Research Center, Chonnam National University Gwangju 61186 Republic of Korea
| | - Vidya Nand Singh
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
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