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Yang JH, Jang GP, Kim SY, Chae YB, Lee KH, Moon DG, Kim CK. Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO x Nanoparticle Hole Injection Layer. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2324. [PMID: 37630909 PMCID: PMC10459627 DOI: 10.3390/nano13162324] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Revised: 08/09/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
This paper presents a study that aims to enhance the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoOx) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoOx NP layer on device characteristics and delves into the underlying mechanisms that contribute to the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoOx NPs during the synthesis process. Ultraviolet photoelectron spectroscopy was employed to analyze the electron structure of the QLEDs. Remarkable enhancements in device performance were achieved for the QLED by employing an 8 mg/mL concentration of MoOx nanoparticles. This configuration attains a maximum luminance of 69,240.7 cd/cm2, a maximum current efficiency of 56.0 cd/A, and a maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify notable progress in comparison to those for QLED without HIL, and studies that utilize the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancements of 59.5% and 26.4% in maximum current efficiency, respectively, as well as significant improvements of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future.
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Affiliation(s)
| | | | | | | | | | | | - Chang-Kyo Kim
- Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of Korea; (J.-H.Y.); (G.-P.J.); (S.-Y.K.); (Y.-B.C.); (K.-H.L.); (D.-G.M.)
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Kim J, Kim J. Structural and Optical Properties of NiO/ZnS Core-Shell Nanostructures for Efficient Quantum Dot Light-Emitting Diodes. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5106. [PMID: 37512380 PMCID: PMC10383065 DOI: 10.3390/ma16145106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 07/16/2023] [Accepted: 07/18/2023] [Indexed: 07/30/2023]
Abstract
Colloidal quantum dots (QDs) have emerged as promising candidates for optoelectronic devices. In particular, quantum dot light-emitting devices (QLEDs) utilizing QDs as the emission layer offer advantages in terms of simplified fabrication processes. However, the use of poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) as a hole injection layer (HIL) in QLEDs presents limitations due to its acidic and hygroscopic nature. In this study, NiO/ZnS core-shell nanostructures as an alternative HIL were studied. The ZnS shell on NiO nanoparticles effectively suppresses the exciton quenching process and regulates charge transfer in QLEDs. The fabricated QLEDs with NiO/ZnS HIL demonstrate high luminance and current efficiency, highlighting the potential of NiO/ZnS as an inorganic material for highly stable all-inorganic QLEDs.
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Affiliation(s)
- Jungho Kim
- Department of Advanced Materials Engineering, Kyonggi University, Suwon 16227, Republic of Korea
| | - Jiwan Kim
- Department of Advanced Materials Engineering, Kyonggi University, Suwon 16227, Republic of Korea
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Cho HB, Han JY, Kim HJ, Viswanath NSM, Park YM, Min JW, Jang SW, Yang H, Im WB. Utilizing VO 2 as a Hole Injection Layer for Efficient Charge Injection in Quantum Dot Light-Emitting Diodes Enables High Device Performance. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37289727 DOI: 10.1021/acsami.3c02857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs) are promising devices for display applications. Polyethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS) is a common hole injection layer (HIL) material in optoelectronic devices because of its high conductivity and high work function. Nevertheless, PEDOT:PSS-based QLEDs have a high energy barrier for hole injection, which results in low device efficiency. Therefore, a new strategy is needed to improve the device efficiency. Herein, we have demonstrated a bilayer-HIL using VO2 and a PEDOT:PSS-based QLED that exhibits an 18% external quantum efficiency (EQE), 78 cd/A current efficiency (CE), and 25,771 cd/m2 maximum luminance. In contrast, the PEDOT:PSS-based QLED exhibits an EQE of 13%, CE of 54 cd/A, and maximum luminance of 14,817 cd/m2. An increase in EQE was attributed to a reduction in the energy barrier between indium tin oxide (ITO) and PEDOT:PSS, caused by the insertion of a VO2 HIL. Therefore, our results could demonstrate that using a bilayer-HIL is effective in increasing the EQE in QLEDs.
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Affiliation(s)
- Han Bin Cho
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Ju Yeon Han
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Ha Jun Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | | | - Yong Min Park
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Jeong Wan Min
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Sung Woo Jang
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Won Bin Im
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
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Lee S, Park SM, Jung ED, Zhu T, Pina JM, Anwar H, Wu FY, Chen GL, Dong Y, Cui T, Wei M, Bertens K, Wang YK, Chen B, Filleter T, Hung SF, Won YH, Kim KH, Hoogland S, Sargent EH. Dipole Engineering through the Orientation of Interface Molecules for Efficient InP Quantum Dot Light-Emitting Diodes. J Am Chem Soc 2022; 144:20923-20930. [DOI: 10.1021/jacs.2c09705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - So Min Park
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Eui Dae Jung
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Tong Zhu
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Joao M. Pina
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Husna Anwar
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Feng-Yi Wu
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Guan-Lin Chen
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Yitong Dong
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Teng Cui
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King’s College Road, Toronto, Ontario M5S 3G8, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Koen Bertens
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Ya-Kun Wang
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Bin Chen
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Tobin Filleter
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King’s College Road, Toronto, Ontario M5S 3G8, Canada
| | - Sung-Fu Hung
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Yu-Ho Won
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si 16678, Republic of Korea
| | - Kwang Hee Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si 16678, Republic of Korea
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
| | - Edward H. Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada
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