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Nataraj C, Mohanta K, Badhirappan GP. Investigations on Optical Absorption and the Pyro-phototronic Effect with Selectively Patterned Black Silicon for Advanced Photodetection. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38660705 DOI: 10.1021/acsami.3c18632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
A novel property existing in the stain-etching technique that eliminates the need for expensive etchant masks in the texturization process of silicon wafers was identified. Through the combination of grayscale lithography and stain-etching methodologies, selective patterning of silicon with AR-P 3510 T, a positive-photoresist mask, was carried out. The etch area ratio was varied in nine different patterns of various feature sizes ranging from 400 to 1500 μm. The optical characteristics of the patterned substrates were determined from diffuse reflectance spectroscopy analysis, and the results were supported with finite-difference time-domain simulations. Complimenting the improvement in optical properties, the electrical losses in microwell-patterned photodetector devices have been reduced with an electro-optic optimum value of the surface enhancement factor, γ. The photodetecting efficiency of a selectively patterned microwell photodetector device exceeded the planar and black silicon photodetector devices with a considerable improvement in the pyro-phototronic effect. This work suggests an alternative for black silicon optoelectronic devices providing a new route to fabricate selectively patterned substrates with an achieved detectivity 16- and 20-fold higher than black and planar silicon photodetector devices, respectively.
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Affiliation(s)
- Charumathi Nataraj
- Nanostructured Surfaces and Thin Films Laboratory, Department of Physics, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamil Nadu 641004, India
| | - Kallol Mohanta
- Hybrid Electronics Laboratory, Department of Physics, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamil Nadu 641004, India
| | - Geetha Priyadarshini Badhirappan
- Nanostructured Surfaces and Thin Films Laboratory, Department of Physics, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamil Nadu 641004, India
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Zhang B, Zhang B, Sheng G, Gu C, Yu J, Zhang X. Modulating the density of silicon nanowire arrays for high-performance hydrovoltaic devices. NANOTECHNOLOGY 2024; 35:185401. [PMID: 38271720 DOI: 10.1088/1361-6528/ad22a9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 01/25/2024] [Indexed: 01/27/2024]
Abstract
Hydrovoltaic devices (HDs) based on silicon nanowire (SiNW) arrays have received intensive attention due to their simple preparation, mature processing technology, and high output power. Investigating the impact of structure parameters of SiNWs on the performance of HDs can guide the optimization of the devices, but related research is still not sufficient. This work studies the effect of the SiNW density on the performance of HDs. SiNW arrays with different densities were prepared by controlling the react time of Si wafers in the seed solution (tseed) in metal-assisted chemical etching. Density of SiNW array gradually decreases with the increase oftseed. HDs were fabricated based on SiNW arrays with different densities. The research results indicate that the open-circuit voltage gradually decreases with increasingtseed, while the short-circuit current first increases and then decreases with increasingtseed. Overall, SiNW devices withtseedof 20 s and 60 s have the best output performance. The difference in output performance of HDs based on SiNWs with different densities is attributed to the difference in the gap sizes between SiNWs, specific surface area of SiNWs, and the number of SiNWs in parallel. This work gives the corresponding relationship between the preparation conditions of SiNWs, array density, and output performance of hydrovoltaic devices. Density parameters of SiNW arrays with optimized output performance and corresponding preparation conditions are revealed. The relevant results have important reference value for understanding the mechanism of HDs and designing structural parameters of SiNWs for high-performance hydrovoltaic devices.
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Affiliation(s)
- Binbin Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, People's Republic of China
| | - Bingchang Zhang
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, Jiangsu, People's Republic of China
| | - Guangshang Sheng
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, Jiangsu, People's Republic of China
| | - Chenyang Gu
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, Jiangsu, People's Republic of China
| | - Jia Yu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, People's Republic of China
| | - Xiaohong Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, People's Republic of China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, People's Republic of China
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Huo C, Fu H, Peng KQ. Inverted pyramid structures fabricated on monocrystalline silicon surface with a NaOH solution. Heliyon 2024; 10:e23871. [PMID: 38223722 PMCID: PMC10784176 DOI: 10.1016/j.heliyon.2023.e23871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Revised: 10/23/2023] [Accepted: 12/14/2023] [Indexed: 01/16/2024] Open
Abstract
Low-cost aqueous alkaline etching has been widely adopted for monocrystalline silicon surface texturing in current industrial silicon solar cells. However, conventional alkaline etching can only prepare upright pyramid structures on mono-crystalline silicon surfaces. This study demonstrates for the first time the use of ethylene glycol butyl ether (EGBE) to regulate aqueous anisotropic alkaline etching and prepare inverted pyramid structures on monocrystalline silicon surfaces. Acidic metal-catalyzed etching solutions are not the best choice for monocrystalline silicon due to their inherent disadvantages, such as noble metal pollution and relatively high costs. The one-step method to produce the inverted pyramid structures by using alkaline etch with EGBE additive is simple and inexpensive, does not generate noble metal pollution, and especially compatible with current industrial silicon solar cell production lines. With the use of a sodium hydroxide (NaOH) solution containing a low-cost additive, inverted pyramid structures can be prepared on mono-crystalline silicon surface in a short time. This method is suitable for various types of silicon wafers and has great potential for industrial solar cell applications.
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Affiliation(s)
- Chenliang Huo
- College of Education for the Future, Beijing Normal University at Zhuhai, Department of Physics and Beijing Key Laboratory of Energy Conversion and Storage Materials, Beijing Normal University, Beijing, China
| | - Haoxin Fu
- Tongwei Solar Company, Chengdu, China
| | - Kui-Qing Peng
- College of Education for the Future, Beijing Normal University at Zhuhai, Department of Physics and Beijing Key Laboratory of Energy Conversion and Storage Materials, Beijing Normal University, Beijing, China
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Shen X, Li C, Wu Z, Tang R, Shen J, Chu M, Xu AB, Zhang B, He L, Zhang X. Rationally designed nanoarray catalysts for boosted photothermal CO 2 hydrogenation. NANOSCALE 2022; 14:11568-11574. [PMID: 35916538 DOI: 10.1039/d2nr02680e] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
It is of emerging interest to convert CO2 and green H2 into solar fuels with great efficiency through photothermal CO2 hydrogenation. However, designing photothermal catalysts with improved sunlight harvesting ability, intrinsic catalytic activity, and thermal management to prevent heat dissipation still remains rather challenging. Herein, we report a facile structural engineering strategy for preparing efficient nanoarray-based photothermal catalysts with strong light absorption ability, high metal dispersity, and effective thermal management. Optimizing the 120 μm-SiNCs@Co catalyst allowed it to reach a record high Co-based photothermal CO2 conversion rate of 1780 mmol gCo-1 h-1. This study provides insight into the structural engineering of photothermal catalysts for enhanced catalytic performance and lays a foundation for efficient photothermal CO2 catalysis.
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Affiliation(s)
- Xukai Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Chaoran Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, PR China
| | - Zhiyi Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Rui Tang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Jiahui Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Mingyu Chu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Ao-Bo Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
| | - Bingchang Zhang
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215123, PR China.
| | - Le He
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, PR China
| | - Xiaohong Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, PR China
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