Vacancy-Induced Thermal Transport and Tensile Mechanical Behavior of Monolayer Honeycomb BeO

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

Anisotropic crystal orientations dependent mechanical properties and fracture mechanisms in zinc blende ZnTe nanowires

The orientations of crystal growth significantly affect the operating characteristics of elastic and inelastic deformation in semiconductor nanowires (NWs). This work uses molecular dynamics simulation to extensively investigate the orientation-dependent mechanical properties and fracture mechanisms of zinc blende ZnTe NWs. Three different crystal orientations, including [100], [110], and [111], coupled with temperatures (100 to 600 K) on the fracture stress and elastic modulus, are thoroughly studied. In comparison to the [110] and [100] orientations, the [111]-oriented ZnTe NW exhibits a high fracture stress. The percentage decrease in fracture strength exhibits a pronounced variation with increasing temperature, with the highest magnitude observed in the [100] direction and the lowest magnitude observed in the [110] direction. The elastic modulus dropped by the largest percentage in the [111] direction as compared to the [100] direction. Most notably, the [110]-directed ZnTe NW deforms unusually as the strain rate increases, making it more sensitive to strain rate than other orientations. The strong strain rate sensitivity results from the unusual short-range and long-range order crystals appearing due to dislocation slipping and partial twinning. Moreover, the {111} plane is the principal cleavage plane for all orientations, creating a dislocation slipping mechanism at room temperature. The {100} plane becomes active and acts as another fundamental cleavage plane at increasing temperatures. This in-depth analysis paves the way for advancing efficient and reliable ZnTe NWs-based nanodevices and nanomechanical systems.

Robust electronic properties of monolayer BeO against molecule adsorption

The stability of two-dimensional (2D) materials upon exposure to ambient conditions is significant for their applications. In this paper, the air stability of the BeO monolayer with and without vacancy defects is carefully studied via DFT calculations. Our results suggest high structural and electronic stability of BeO monolayers upon exposure to O₂, N₂, CO₂ and H₂O even with Be vacancies. O vacancies are not favorable in free-standing BeO monolayers and can be easily healed by H₂O or CO₂ adsorption. Due to the high stability, large band gap and atomic flat surface, BeO monolayers are expected to be an ideal encapsulation material for 2D electronic devices.

Crystal orientation-dependent tensile mechanical behavior and deformation mechanisms of zinc-blende ZnSe nanowires

Crystal deformation mechanisms and mechanical behaviors in semiconductor nanowires (NWs), in particular ZnSe NWs, exhibit a strong orientation dependence. However, very little is known about tensile deformation mechanisms for different crystal orientations. Here, the dependence of crystal orientations on mechanical properties and deformation mechanisms of zinc-blende ZnSe NWs are explored using molecular dynamics simulations. We find that the fracture strength of [111]-oriented ZnSe NWs shows a higher value than that of [110] and [100]-oriented ZnSe NWs. Square shape ZnSe NWs show greater value in terms of fracture strength and elastic modulus compared to a hexagonal shape at all considered diameters. With increasing temperature, the fracture stress and elastic modulus exhibit a sharp decrease. It is observed that the {111} planes are the deformation planes at lower temperatures for the [100] orientation; conversely, when the temperature is increased, the {100} plane is activated and contributes as the second principal cleavage plane. Most importantly, the [110]-directed ZnSe NWs show the highest strain rate sensitivity compared to the other orientations due to the formation of many different cleavage planes with increasing strain rates. The calculated radial distribution function and potential energy per atom further validates the obtained results. This study is very important for the future development of efficient and reliable ZnSe NWs-based nanodevices and nanomechanical systems.