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Zhao Y, Zheng X, Gao P, Li H. Recent advances in defect-engineered molybdenum sulfides for catalytic applications. MATERIALS HORIZONS 2023; 10:3948-3999. [PMID: 37466487 DOI: 10.1039/d3mh00462g] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Electrochemical energy conversion and storage driven by renewable energy sources is drawing ever-increasing interest owing to the needs of sustainable development. Progress in the related electrochemical reactions relies on highly active and cost-effective catalysts to accelerate the sluggish kinetics. A substantial number of catalysts have been exploited recently, thanks to the advances in materials science and engineering. In particular, molybdenum sulfide (MoSx) furnishes a classic platform for studying catalytic mechanisms, improving catalytic performance and developing novel catalytic reactions. Herein, the recent theoretical and experimental progress of defective MoSx for catalytic applications is reviewed. This article begins with a brief description of the structure and basic catalytic applications of MoS2. The employment of defective two-dimensional and non-two-dimensional MoSx catalysts in the hydrogen evolution reaction (HER) is then reviewed, with a focus on the combination of theoretical and experimental tools for the rational design of defects and understanding of the reaction mechanisms. Afterward, the applications of defective MoSx as catalysts for the N2 reduction reaction, the CO2 reduction reaction, metal-sulfur batteries, metal-oxygen/air batteries, and the industrial hydrodesulfurization reaction are discussed, with a special emphasis on the synergy of multiple defects in achieving performance breakthroughs. Finally, the perspectives on the challenges and opportunities of defective MoSx for catalysis are presented.
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Affiliation(s)
- Yunxing Zhao
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 639798, Singapore.
| | - Xiaolin Zheng
- Department of Mechanical Engineering, Stanford University, California 94305, USA.
| | - Pingqi Gao
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
| | - Hong Li
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 639798, Singapore.
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 637553, Singapore
- Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
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2
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Guo Y, Li J, Yuan G, Guo J, Zheng Y, Huang Y, Zhang Q, Li J, Shen J, Shu C, Xu J, Tang Y, Lei W, Shao H. Elucidating the Volcanic-Type Catalytic Behavior in Lithium-Sulfur Batteries via Defect Engineering. ACS NANO 2023; 17:18253-18265. [PMID: 37669410 DOI: 10.1021/acsnano.3c05269] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/07/2023]
Abstract
Defects are generally considered to be effective and flexible in the catalytic reactions of lithium-sulfur batteries. However, the influence of the defect concentration on catalysis remains ambiguous. In this work, molybdenum sulfide with different sulfur vacancy concentrations is comprehensively modulated, showing that the defect level and the adsorption-catalytic performance result in a volcano relationship. Moreover, density functional theory and in situ experiments reveal that the optimal level of sulfur defects can effectively increase the binding energy between molybdenum sulfide and lithium polysulfides (LiPSs), lower the energy barrier of the LiPS conversion reaction, and promote the kinetics of Li2S bidirectional catalytic reaction. The lower bidirectional catalytic performance incited by excessive or deficient sulfur defects is mainly due to the deformed geometrical structures and reduced adsorption of key LiPSs on the catalyst surface. This work underscores the imperative of controlling the defect content and provides a potential approach to the commercialization of lithium-sulfur batteries.
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Affiliation(s)
- Yan Guo
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Jing Li
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Gaoqian Yuan
- The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Junpo Guo
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Yun Zheng
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Yike Huang
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Qi Zhang
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Jielei Li
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Jingjun Shen
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Chenhao Shu
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Jincheng Xu
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
| | - Yuxin Tang
- College of Chemical Engineering, Fuzhou University, Fuzhou 350116, People's Republic of China
| | - Wen Lei
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
- The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Huaiyu Shao
- Guangdong-Hong Kong-Macau Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China
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3
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Xu K, Liang T, Zhang Z, Cao X, Han M, Wei N, Wu J. Grain boundary and misorientation angle-dependent thermal transport in single-layer MoS 2. NANOSCALE 2022; 14:1241-1249. [PMID: 34994370 DOI: 10.1039/d1nr05113j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Grain boundaries (GBs) are inevitable defects in large-area MoS2 samples but they play a key role in their properties, however, the influence of grain misorientation on thermal transport has largely remained unknown. Here, the critical role of misorientation angle in thermal transport characteristics across 5|7 polar dislocation-dominated GBs in monolayer MoS2 is explored using nonequilibrium molecular dynamics simulations. Results show that thermal transport characteristics of defective GBs are greatly dictated by the misorientation angle, with "U"-shaped thermal conductance as misorientation angle varying from around 5.06-52.26°, as well as by GB energy, 5|7 dislocation type and the grain size. Such unique thermal transport across GBs is primarily attributed to rising phonon-boundary softening and scattering with increasing dislocation density at GBs or GB energy, as well as an increase in localized phonon modes. The study establishes the fundamental relationship between GB and the thermal properties of single-layer MoS2 and highlights the vital role of GBs in designing efficient thermoelectric and thermal management transition metal dichalcogenides.
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Affiliation(s)
- Ke Xu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
| | - Ting Liang
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Zhisen Zhang
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
| | - Xuezheng Cao
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
| | - Meng Han
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ning Wei
- Jiangsu Key Laboratory of Advanced Food Manufacturing Equipment and Technology, Jiangnan University, 214122, Wuxi, China.
| | - Jianyang Wu
- Department of Physics, Research Institute for Biomimetics and Soft Matter, Jiujiang Research Institute and Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen 361005, PR China.
- NTNU Nanomechanical Lab, Norwegian University of Science and Technology (NTNU), Trondheim 7491, Norway
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4
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Sinha S, Zhu T, France-Lanord A, Sheng Y, Grossman JC, Porfyrakis K, Warner JH. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nat Commun 2020; 11:823. [PMID: 32041958 PMCID: PMC7010709 DOI: 10.1038/s41467-020-14481-z] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Accepted: 01/06/2020] [Indexed: 11/09/2022] Open
Abstract
Lead Iodide (PbI2) is a large bandgap 2D layered material that has potential for semiconductor applications. However, atomic level study of PbI2 monolayer has been limited due to challenges in obtaining thin crystals. Here, we use liquid exfoliation to produce monolayer PbI2 nanodisks (30-40 nm in diameter and > 99% monolayer purity) and deposit them onto suspended graphene supports to enable atomic structure study of PbI2. Strong epitaxial alignment of PbI2 monolayers with the underlying graphene lattice occurs, leading to a phase shift from the 1 T to 1 H structure to increase the level of commensuration in the two lattice spacings. The fundamental point vacancy and nanopore structures in PbI2 monolayers are directly imaged, showing rapid vacancy migration and self-healing. These results provide a detailed insight into the atomic structure of monolayer PbI2, and the impact of the strong van der Waals interaction with graphene, which has importance for future applications in optoelectronics.
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Affiliation(s)
- Sapna Sinha
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Taishan Zhu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Arthur France-Lanord
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Yuewen Sheng
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Kyriakos Porfyrakis
- Faculty of Engineering and Science, University of Greenwich, Central Avenue, Chatham Maritime, Kent, ME4 4TB, UK
| | - Jamie H Warner
- Department of Mechanical Engineering, University of Texas at Austin, 204 Dean Keeton Street, Austin, 78712, USA.
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5
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Singh A, Lee S, Bae H, Koo J, Yang L, Lee H. Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials. RSC Adv 2019; 9:40309-40315. [PMID: 35542649 PMCID: PMC9076166 DOI: 10.1039/c9ra07700f] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2019] [Accepted: 11/19/2019] [Indexed: 11/21/2022] Open
Abstract
First-principle calculations were employed to analyze the effects induced by vacancies of molybdenum (Mo) and sulfur (S) on the dielectric properties of few-layered MoS2. We explored the combined effects of vacancies and dipole interactions on the dielectric properties of few-layered MoS2. In the presence of dielectric screening, we investigated uniformly distributed Mo and S vacancies, and then considered the case of concentrated vacancies. Our results show that the dielectric screening remarkably depends on the distribution of vacancies owing to the polarization induced by the vacancies and on the interlayer distances. This conclusion was validated for a wide range of wide-gap semiconductors with different positions and distributions of vacancies, providing an effective and reliable method for calculating and predicting electrostatic screening of dimensionally reduced materials. We further provided a method for engineering the dielectric constant by changing the interlayer distance, tuning the number of vacancies and the distribution of vacancies in few-layered van der Waals materials for their application in nanodevices and supercapacitors.
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Affiliation(s)
- Amit Singh
- Department of Physics, Konkuk University Seoul 05029 Korea .,Department of Mechanical Engineering, National Chiao Tung University Hsinchu 300 Taiwan Republic of China
| | - Seunghan Lee
- Department of Physics, Konkuk University Seoul 05029 Korea
| | - Hyeonhu Bae
- Department of Physics, Konkuk University Seoul 05029 Korea
| | - Jahyun Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science Rehovot 7610001 Israel
| | - Li Yang
- Department of Physics, Washington University in St. Louis St. Louis Missouri 63136 USA
| | - Hoonkyung Lee
- Department of Physics, Konkuk University Seoul 05029 Korea
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6
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Huang B, Tian F, Shen Y, Zheng M, Zhao Y, Wu J, Liu Y, Pennycook SJ, Thong JTL. Selective Engineering of Chalcogen Defects in MoS 2 by Low-Energy Helium Plasma. ACS APPLIED MATERIALS & INTERFACES 2019; 11:24404-24411. [PMID: 31199625 DOI: 10.1021/acsami.9b05507] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Structural defects in two-dimensional transition-metal dichalcogenides can significantly modify the material properties. Previous studies have shown that chalcogen defects can be created by physical sputtering, but the energetic ions can potentially displace transition-metal atoms at the same time, leading to ambiguous results and in some cases, degradation of material quality. In this work, selective sputtering of S atoms in monolayer MoS2 without damaging the Mo sublattice is demonstrated with low-energy helium plasma treatment. Based on X-ray photoelectron spectroscopy analysis, wide-range tuning of S defect concentration is achieved by controlling the ion energy and sputtering time. Furthermore, characterization with scanning transmission electron microscopy confirms that by keeping the ion energy low, the Mo sublattice remains intact. The properties of MoS2 at different defect concentrations are also characterized. In situ device measurement shows that the flake can be tuned from a semiconducting to metallic-like behavior by introducing S defects due to the creation of mid-gap states. When the defective MoS2 is exposed to air, the S defects are soon passivated, with oxygen atoms filling the defect sites.
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Affiliation(s)
- Binjie Huang
- Department of Electrical and Computer Engineering , National University of Singapore , 117583 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 119077 , Singapore
| | - Feng Tian
- Center for Advanced 2D Materials , National University of Singapore , 117542 , Singapore
| | - Youde Shen
- Department of Electrical and Computer Engineering , National University of Singapore , 117583 , Singapore
| | - Minrui Zheng
- Department of Electrical and Computer Engineering , National University of Singapore , 117583 , Singapore
| | - Yunshan Zhao
- Department of Electrical and Computer Engineering , National University of Singapore , 117583 , Singapore
| | - Jing Wu
- Institute of Materials Research and Engineering , Agency for Science Technology and Research , 138634 , Singapore
| | - Yi Liu
- Department of Electrical and Computer Engineering , National University of Singapore , 117583 , Singapore
| | - Stephen J Pennycook
- Center for Advanced 2D Materials , National University of Singapore , 117542 , Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 , Singapore
| | - John T L Thong
- Department of Electrical and Computer Engineering , National University of Singapore , 117583 , Singapore
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7
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Zhang Q, Zhang L, Jin C, Wang Y, Lin F. CalAtom: A software for quantitatively analysing atomic columns in a transmission electron microscope image. Ultramicroscopy 2019; 202:114-120. [DOI: 10.1016/j.ultramic.2019.04.007] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2019] [Revised: 03/31/2019] [Accepted: 04/10/2019] [Indexed: 10/27/2022]
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8
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Ryu GH, Chen J, Wen Y, Zhou S, Chang RJ, Warner JH. Atomic structural catalogue of defects and vertical stacking in 2H/3R mixed polytype multilayer WS 2 pyramids. NANOSCALE 2019; 11:10859-10871. [PMID: 31135012 DOI: 10.1039/c9nr01783f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We examine the atomic structure of chemical vapour deposition grown multilayer WS2 pyramids using aberration corrected annular dark field scanning transmission electron microscopy coupled with an in situ heating holder. The stacking orders and specific types of defects after partial degradation by S and W atomic loss at high temperature are resolved layer-by-layer. Our study of an individual WS2 pyramid with at least six layers, reveals a mixed 2H and 3R polytype stacking. Etching occurred both top and bottom of the WS2 pyramid, which aids in determining the exact vertical layer stacking configurations in the thicker regions. We provide an extensive catalogue of the contrast profiles associated with defects in WS2 as a function of layer number and stacking type, as imaged using ADF-STEM. These results provide extensive details about the identification of a wide range of defects in S2 layers, and the unique ADF-STEM contrast patterns that arise from complex multilayer stacking.
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Affiliation(s)
- Gyeong Hee Ryu
- Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, UK.
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9
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Huan YW, Liu WJ, Tang XB, Xue XY, Wang XL, Sun QQ, Ding SJ. Investigation of Nitridation on the Band Alignment at MoS 2/HfO 2 Interfaces. NANOSCALE RESEARCH LETTERS 2019; 14:181. [PMID: 31144185 PMCID: PMC6541675 DOI: 10.1186/s11671-019-3020-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2019] [Accepted: 05/20/2019] [Indexed: 05/17/2023]
Abstract
The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO2 triggered by nitridation. This study on the energy band engineering of MoS2/HfO2 heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.
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Affiliation(s)
- Ya-Wei Huan
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Wen-Jun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Xiao-Bing Tang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Xiao-Yong Xue
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Xiao-Lei Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Qing-Qing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Shi-Jin Ding
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
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10
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Mendes RG, Pang J, Bachmatiuk A, Ta HQ, Zhao L, Gemming T, Fu L, Liu Z, Rümmeli MH. Electron-Driven In Situ Transmission Electron Microscopy of 2D Transition Metal Dichalcogenides and Their 2D Heterostructures. ACS NANO 2019; 13:978-995. [PMID: 30673226 DOI: 10.1021/acsnano.8b08079] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Investigations on monolayered transition metal dichalcogenides (TMDs) and TMD heterostructures have been steadily increasing over the past years due to their potential application in a wide variety of fields such as microelectronics, sensors, batteries, solar cells, and supercapacitors, among others. The present work focuses on the characterization of TMDs using transmission electron microscopy, which allows not only static atomic resolution but also investigations into the dynamic behavior of atoms within such materials. Herein, we present a body of recent research from the various techniques available in the transmission electron microscope to structurally and analytically characterize layered TMDs and briefly compare the advantages of TEM with other characterization techniques. Whereas both static and dynamic aspects are presented, special emphasis is given to studies on the electron-driven in situ dynamic aspects of these materials while under investigation in a transmission electron microscope. The collection of the presented results points to a future prospect where electron-driven nanomanipulation may be routinely used not only in the understanding of fundamental properties of TMDs but also in the electron beam engineering of nanocircuits and nanodevices.
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Affiliation(s)
- Rafael G Mendes
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Jinbo Pang
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Alicja Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
- Centre of Polymer and Carbon Materials , Polish Academy of Sciences , M. Curie-Skłodowskiej 34 , Zabrze 41-819 , Poland
| | | | | | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Lei Fu
- College of Chemistry and Molecular Science , Wuhan University , Wuhan 430072 , China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
- Centre of Polymer and Carbon Materials , Polish Academy of Sciences , M. Curie-Skłodowskiej 34 , Zabrze 41-819 , Poland
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11
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Bi S, Li Q, Yan Y, Asare-Yeboah K, Ma T, Tang C, Ouyang Z, He Z, Liu Y, Jiang C. Layer-dependent anisotropic frictional behavior in two-dimensional monolayer hybrid perovskite/ITO layered heterojunctions. Phys Chem Chem Phys 2019; 21:2540-2546. [DOI: 10.1039/c8cp06645k] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The anisotropy of friction between 2D perovskites and the ITO is a four-fold symmetry in misaligned and aligned contacts.
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Affiliation(s)
- Sheng Bi
- Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education
- Dalian University of Technology
- Dalian 116024
- China
- Institute of Photoelectric Nanoscience and Nanotechnology
| | - Qikun Li
- Institute of Photoelectric Nanoscience and Nanotechnology
- School of Mechanical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Ying Yan
- Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education
- Dalian University of Technology
- Dalian 116024
- China
| | | | - Tianbao Ma
- State Key Laboratory of Tribology
- Tsinghua University
- Beijing 100084
- China
| | - Chaolong Tang
- School of Physical & Mathematical Science
- Nanyang Technological University
- Singapore
| | - Zhongliang Ouyang
- Department of Electrical and Computer Engineering
- Center for Materials for Information Technology
- The University of Alabama
- Tuscaloosa
- USA
| | - Zhengran He
- Department of Electrical and Computer Engineering
- Center for Materials for Information Technology
- The University of Alabama
- Tuscaloosa
- USA
| | - Yun Liu
- School of Physics
- Dalian University of Technology
- Dalian 116024
- China
| | - Chengming Jiang
- Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education
- Dalian University of Technology
- Dalian 116024
- China
- Institute of Photoelectric Nanoscience and Nanotechnology
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12
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Density functional investigation on hexagonal nanosheets and bulk thallium nitrides for possible thermoelectric applications. APPLIED NANOSCIENCE 2018. [DOI: 10.1007/s13204-018-0884-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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13
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Zhou S, Wang S, Shi Z, Sawada H, Kirkland AI, Li J, Warner JH. Atomically sharp interlayer stacking shifts at anti-phase grain boundaries in overlapping MoS 2 secondary layers. NANOSCALE 2018; 10:16692-16702. [PMID: 30155545 DOI: 10.1039/c8nr04486d] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
When secondary domains nucleate and grow on the surface of monolayer MoS2, they can extend across grain boundaries in the underlying monolayer MoS2 and form overlapping sections. We present an atomic level study of overlapping antiphase grain boundaries (GBs) in MoS2 monolayer-bilayers using aberration-corrected annular dark field scanning transmission electron microscopy. In particular we focus on the antiphase GB within a monolayer and track its propagation through an overlapping bilayer domain. We show that this leads to an atomically sharp interface between 2H and 3R interlayer stacking in the bilayer region. We have studied the micro-nanoscale "meandering" of the antiphase GB in MoS2, which shows a directional dependence on the density of 4 and 8 member ring defects, as well as sharp turning angles 90°-100° that are mediated by a special 8-member ring defect. Density functional theory has been used to explore the overlapping interlayer stacking around the antiphase GBs, confirming our experimental findings. These results show that overlapping secondary bilayer MoS2 domains cause atomic structure modification to underlying anti-phase GB sites to accommodate the van der Waals interactions.
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Affiliation(s)
- Si Zhou
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK.
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14
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Jang I, Sung BJ. Bernal stacking-assisted shear exfoliation of nanoplate bilayers. J Chem Phys 2018; 148:214905. [DOI: 10.1063/1.5029501] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023] Open
Affiliation(s)
- Inhyuk Jang
- Department of Chemistry, Sogang University, Seoul 04107, South Korea
| | - Bong June Sung
- Department of Chemistry, Sogang University, Seoul 04107, South Korea
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Wang S, Robertson A, Warner JH. Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides. Chem Soc Rev 2018; 47:6764-6794. [DOI: 10.1039/c8cs00236c] [Citation(s) in RCA: 126] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Transmission electron microscopy can directly image the detailed atomic structure of layered transition metal dichalcogenides, revealing defects and dopants.
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Affiliation(s)
- Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory
- College of Aerospace Science and Engineering
- National University of Defense Technology
- Changsha 410073
- P. R. China
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