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Lee H, Im H, Choi BK, Park K, Chen Y, Ruan W, Zhong Y, Lee JE, Ryu H, Crommie MF, Shen ZX, Hwang C, Mo SK, Hwang J. Controlling structure and interfacial interaction of monolayer TaSe 2 on bilayer graphene. NANO CONVERGENCE 2024; 11:14. [PMID: 38622355 PMCID: PMC11018566 DOI: 10.1186/s40580-024-00422-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Accepted: 04/01/2024] [Indexed: 04/17/2024]
Abstract
Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1 T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.
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Affiliation(s)
- Hyobeom Lee
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, South Korea
| | - Hayoon Im
- Department of Physics, Pusan National University, Busan, South Korea
| | - Byoung Ki Choi
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kyoungree Park
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, South Korea
| | - Yi Chen
- Department of Physics, University of California, Berkeley, CA, USA
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Wei Ruan
- Department of Physics, University of California, Berkeley, CA, USA
- State Key Laboratory of Surface Physics, New Cornerstone Science Laboratory, and Department of Physics, Fudan University, Shanghai, China
| | - Yong Zhong
- Geballe Laboratory for Advanced Materials, Department of Physics and Applied Physics, Stanford University, Stanford, CA, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, South Korea
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, South Korea
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Zhi-Xun Shen
- Geballe Laboratory for Advanced Materials, Department of Physics and Applied Physics, Stanford University, Stanford, CA, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, South Korea.
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Jinwoong Hwang
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, South Korea.
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Koussir H, Chernukha Y, Sthioul C, Haber E, Peric N, Biadala L, Capiod P, Berthe M, Lefebvre I, Wallart X, Grandidier B, Diener P. Large-Area Epitaxial Mott Insulating 1T-TaSe 2 Monolayer on GaP(111)B. NANO LETTERS 2023; 23:9413-9419. [PMID: 37820373 DOI: 10.1021/acs.nanolett.3c02813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Two-dimensional Mott materials have recently been reported in the dichalcogenide family with high potential for Mottronic applications. Nevertheless, their widespread use as a single or few layers is hampered by their limited device integration resulting from their growth on graphene, a metallic substrate. Here, we report on the fabrication of 1T-TaSe2 monolayers grown by molecular beam epitaxy on semiconducting gallium phosphide substrates. At the nanoscale, the charge density wave reconstruction and a moiré pattern resulting from the monolayer interaction with the substrate are observed by scanning tunneling microscopy. The fully open gap unveiled by tunneling spectroscopy, which can be further manipulated by the proximity of a metal tip, is confirmed by transport measurements from micrometric to millimetric scales, demonstrating a robust Mott insulating phase at up to 400 K.
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Affiliation(s)
- H Koussir
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Y Chernukha
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - C Sthioul
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - E Haber
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - N Peric
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - L Biadala
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - P Capiod
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - M Berthe
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - I Lefebvre
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - X Wallart
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - B Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - P Diener
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
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Buß L, Braud N, Ewert M, Jugovac M, Menteş TO, Locatelli A, Falta J, Flege JI. Unraveling van der Waals epitaxy: A real-time in-situ study of MoSe2 growth on graphene/Ru(0001). Ultramicroscopy 2023; 250:113749. [PMID: 37186986 DOI: 10.1016/j.ultramic.2023.113749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2023] [Revised: 03/31/2023] [Accepted: 05/04/2023] [Indexed: 05/17/2023]
Abstract
In the present work we investigate the growth of monolayer MoSe2 on selenium-intercalated graphene on Ru(0001), a model layered heterostructure combining a transition metal dichalcogenide with graphene, using low energy electron microscopy and micro-diffraction. Real-time observation of MoSe2 on graphene growth reveals the island nucleation dynamics at the nanoscale. Upon annealing, larger islands are formed by sliding and attachment of multiple nanometer-sized MoSe2 flakes. Local micro-spot angle-resolved photoemission spectroscopy reveals the electronic structure of the heterostructure, indicating that no charge transfer occurs within adjacent layers. The observed behavior is attributed to intercalation of Se at the graphene/Ru(0001) interface. The unperturbed nature of the proposed heterostructure therefore renders it as a model system for investigations of graphene supported TMD nanostructures.
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Affiliation(s)
- Lars Buß
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, Cottbus 03046, Germany.
| | - Nicolas Braud
- Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, Bremen 28359, Germany
| | - Moritz Ewert
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, Cottbus 03046, Germany
| | - Matteo Jugovac
- Elettra-Sincrotrone Trieste S.C.p.A, S.S. 14km 163.5 in AREA Science Park, Trieste, Italy
| | - Tevfik Onur Menteş
- Elettra-Sincrotrone Trieste S.C.p.A, S.S. 14km 163.5 in AREA Science Park, Trieste, Italy
| | - Andrea Locatelli
- Elettra-Sincrotrone Trieste S.C.p.A, S.S. 14km 163.5 in AREA Science Park, Trieste, Italy
| | - Jens Falta
- Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, Bremen 28359, Germany; MAPEX Center for Materials and Processes, P.O. Box 303 440, 28334, Bremen, Germany
| | - Jan Ingo Flege
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, Cottbus 03046, Germany
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