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Ma L, Lin S, Ma H, Liao J, Ye Y, Jian J, Li J, Wang P, Dai S, He T, Wang J, Jin T, Wu J, Si Y, Li J, Yang J, Li L, Lin H, Chen W. Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed. ACS NANO 2024. [PMID: 39086003 DOI: 10.1021/acsnano.4c04640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
The detection of mid-infrared light, covering a variety of molecular vibrational spectra, is critical for both civil and military purposes. Recent studies have highlighted the potential of two-dimensional topological semimetals for mid-infrared detection due to their advantages, including van der Waals (vdW) stacking and gapless electronic structures. Among them, mid-infrared photodetectors based on type-II Dirac semimetals have been less studied. In this paper, we present a silicon waveguide integrated type-II Dirac semimetal platinum telluride (PtTe2) mid-infrared photodetector, and further improve detection performance by using PtTe2-graphene heterostructure. For the fabricated silicon waveguide-integrated PtTe2 photodetector, with an external bias voltage of -10 mV and an input optical power of 86 nW, the measured responsivity is 2.7 A/W at 2004 nm and a 3 dB bandwidth of 0.6 MHz is realized. For the fabricated silicon waveguide-integrated PtTe2-graphene photodetector, as the external bias voltage and input optical power are 0.5 V and 0.13 μW, a responsivity of 5.5 A/W at 2004 nm and a 3 dB bandwidth of 35 MHz are obtained. An external quantum efficiency of 119% can be achieved at an input optical power of 0.376 μW.
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Affiliation(s)
- Lingxiao Ma
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Shuo Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jie Liao
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Pengjun Wang
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China
| | - Shixun Dai
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jiacheng Wang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Tao Jin
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Jianghong Wu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yalan Si
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jun Li
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Jianyi Yang
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Weiwei Chen
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
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Wang X, Zeng G, Shen L, Chen W, Du F, Chen YC, Ding ST, Shi CY, Zhang DW, Chen L, Lu HL. Two-dimensional molybdenum ditelluride waveguide-integrated near-infrared photodetector. NANOTECHNOLOGY 2024; 35:225201. [PMID: 38387089 DOI: 10.1088/1361-6528/ad2c56] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2023] [Accepted: 02/21/2024] [Indexed: 02/24/2024]
Abstract
Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe2) from ∼0.83 to ∼1.1 eV makes it one of the ideal candidates for near-infrared (NIR) photodetectors. Herein, we demonstrate an excellent waveguide-integrated NIR photodetector by transferring mechanically exfoliated 2D MoTe2onto a silicon nitride (Si3N4) waveguide. The photoconductive photodetector exhibits excellent responsivity (R), detectivity (D*), and external quantum efficiency at 1550 nm and 50 mV, which are 41.9 A W-1, 16.2 × 1010Jones, and 3360%, respectively. These optoelectronic performances are 10.2 times higher than those of the free-space device, revealing that the photoresponse of photodetectors can be enhanced due to the presence of waveguide. Moreover, the photodetector also exhibits competitive performances over a broad wavelength range from 800 to 1000 nm with a highRof 15.4 A W-1and a largeD* of 59.6 × 109Jones. Overall, these results provide an alternative and prospective strategy for high-performance on-chip broadband NIR photodetectors.
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Affiliation(s)
- Xinxue Wang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Lei Shen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Wei Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Fanyu Du
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Yu-Chang Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Si-Tong Ding
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Cai-Yu Shi
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
| | - Liao Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, People's Republic of China
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Khan MF, Sadaqat S, Khan MA, Rehman S, Subhani WS, Ouladsmane M, Rehman MA, Ali F, Lipsanen H, Sun Z, Eom J, Ahmed F. Broadening spectral responses and achieving environmental stability in SnS 2/Ag-NPs/HfO 2 flexible phototransistors. NANOSCALE 2024; 16:3622-3630. [PMID: 38273810 DOI: 10.1039/d3nr04626e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Layered two-dimensional (2D) materials have gained popularity thanks to their atomically thin physique and strong coupling with light. Here, we investigated a wide band gap (≥ 2 eV) 2D material, i.e., tin disulfide (SnS2), and decorated it with silver nanoparticles, Ag-NPs, for broadband photodetection. Our results show that the SnS2/Ag-NPs devices exhibit broadband photodetection ranging from the ultraviolet to near-infrared (250-1050 nm) spectrum with decreased rise/decay times from 8/20 s to 7/16 s under 250 nm wavelength light compared to the bare SnS2 device. This is attributed to the localized surface plasmon resonance effect and the wide band gap of SnS2 crystal. Furthermore, the HfO2-passivated SnS2/Ag-NPs devices exhibited high photodetection performance in terms of photoresponsivity (∼12 500 A W-1), and external quantum efficiency (∼6 × 106%), which are significantly higher compared to those of bare SnS2. Importantly, after HfO2 passivation, the SnS2/Ag-NPs photodetector maintained the stable performance for several weeks with merely ∼5.7% reduction in photoresponsivity. Lastly, we fabricated a flexible SnS2/Ag-NPs photodetector, which shows excellent and stable performance under various bending curvatures (0, 20, and 10 mm), as it retains ∼80% of its photoresponsivity up to 500 bending cycles. Thus, our study provides a simple route to realize broadband and stable photoactivity in flexible 2D material-based devices.
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Affiliation(s)
- Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Sana Sadaqat
- Department of Physics, Riphah International University, Faisalabad Campus, 44000, Pakistan
| | - Muhammad Asghar Khan
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea.
| | - Shania Rehman
- Department of Semiconductor System Engineering, Sejong University, Seoul 05006, Republic of Korea
| | | | - Mohamed Ouladsmane
- Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
| | - Malik Abdul Rehman
- Department of Chemical Engineering, New Uzbekistan University, Tashkent, 100007, Uzbekistan
| | - Fida Ali
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| | - Harri Lipsanen
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| | - Zhipei Sun
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
| | - Jonghwa Eom
- Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea.
| | - Faisal Ahmed
- Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
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Xu T, Qi L, Xu Y, Xiao S, Yuan Q, Niu R, Wang J, Tsang HK, Liu T, Cheng Z. Giant optical absorption of a PtSe 2-on-silicon waveguide in mid-infrared wavelengths. NANOSCALE 2024; 16:3448-3453. [PMID: 38189416 DOI: 10.1039/d3nr05983a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Low-dimensional platinum diselenide (PtSe2) is a promising candidate for high-performance optoelectronics in the short-wavelength mid-infrared band due to its high carrier mobility, excellent stability, and tunable bandgap. However, light usually interacts moderately with low-dimensional PtSe2, limiting the optoelectronic responses of PtSe2-based devices. Here we demonstrated a giant optical absorption of a PtSe2-on-silicon waveguide by integrating a ten-layer PtSe2 film on an ultra-thin silicon waveguide. The weak mode confinement in the ultra-thin waveguide dramatically increases the waveguide mode overlap with the PtSe2 film. Our experimental results show that the absorption coefficient of the PtSe2-on-silicon waveguide is in the range of 0.0648 dB μm-1 to 0.0704 dB μm-1 in a spectral region of 2200 nm to 2300 nm wavelengths. Furthermore, we also studied the optical absorption in an ultra-thin silicon microring resonator. Our study provides a promising approach to developing PtSe2-on-silicon hybrid optoelectronic integrated circuits.
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Affiliation(s)
- Tianping Xu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Liqiang Qi
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Yingqi Xu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Shuqi Xiao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
| | - Quan Yuan
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Rui Niu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jiaqi Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Hon Ki Tsang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
| | - Tiegen Liu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Zhenzhou Cheng
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
- Georgia Tech Shenzhen Institute, Tianjin University, Shenzhen 518055, China
- School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
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Ji J, Zhou Y, Zhou B, Desgué E, Legagneux P, Jepsen PU, Bøggild P. Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe 2 Films by Terahertz Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37883033 DOI: 10.1021/acsami.3c09792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.
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Affiliation(s)
- Jie Ji
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Yingqiu Zhou
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Binbin Zhou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Eva Desgué
- Thales Research and Technology, Palaiseau 91767, France
| | | | - Peter Uhd Jepsen
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Peter Bøggild
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
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Lyu J, Yin Y, Kong D, Zhao C, Zhang X, Li A, Yi W, Wu Y, Wang X, Liu R. On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire. J Phys Chem Lett 2023; 14:3861-3868. [PMID: 37067291 DOI: 10.1021/acs.jpclett.3c00613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The integration of optical waveguide and on-chip nanolasers source has been one of the trends in photonic devices. For on-chip nanolasers, the integration of nanowires and high antidamage ability are imperative. Herein, we realized the on-chip ultralow-threshold and wavelength-tunable lasing from alloyed CdSSe nanobelt chip that is excited by the emission from linked ZnO nanowires. ZnO nanowire arrays are integrated into CdSSe nanobelt chips by the dry transfer method. A one-dimensional (1D) ZnO nanowire forms high-quality optical resonators and serves as an indirect pumping light to stimulate CdSSe nanobelt chips, and then wavelength-tunable lasing is generated with the ultralow threshold of 3.88 μW. The lasing mechanism is quite different than direct excitation by nanosecond laser pulse and indirect pumping by ZnO emission. The ZnO-CdSSe blocks provide a new solution to realize nanowire lasing from linked nanowires rather than direct laser pumping and thus avoid the light direct damage under general nanosecond laser excitation.
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Affiliation(s)
- Jing Lyu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Yunsong Yin
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Denan Kong
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunyu Zhao
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Xinyu Zhang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - An Li
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Wen Yi
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yumei Wu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Xianshuang Wang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Ruibin Liu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
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