Hierarchical macroporous Zn(2)SnO(4)-ZnO nanorod composite photoelectrodes for efficient CdS/CdSe quantum dot co-sensitized solar cells

In Situ Decoration of ZnSnO3 Nanosheets on the Surface of Hollow Zn2SnO4 Octahedrons for Enhanced Solar Energy Application

Hierarchical ZnSnO₃/Zn₂SnO₄ porous hollow octahedrons were constructed using the method of combining the acid etching process with the in situ decoration technique for photovoltaic and photocatalytic applications. The composite was used as photoanode of the dye-sensitized solar cells (DSSCs), an overall 4.31% photovoltaic conversion efficiency was obtained, nearly a 73.1% improvement over the DSSCs that used Zn₂SnO₄ solid octahedrons. The composite was also determined to be a high-performance photocatalyst for the removal of heavy metal ion Cr (VI) and antibiotic ciprofloxacin (CIP) in single and co-existing systems under simulated sunlight irradiation. It was remarkable that the composite displayed good reusability and stability in a co-existing system, and the simultaneous removal performance could be restored by a simple acid treatment. These improvements of solar energy utilization were ascribed to the synergetic effect of the hierarchical porous hollow morphology, the introduction of ZnSnO₃ nanosheets, and the heterojunction formed between ZnSnO₃ and Zn₂SnO₄, which could improve light harvesting capacity, expedite electron transport and charge-separation efficiencies.

ZnO nanowires for solar cells: a comprehensive review

As an abundant and non-toxic wide band gap semiconductor with a high electron mobility, ZnO in the form of nanowires (NWs) has emerged as an important electron transporting material in a vast number of nanostructured solar cells. ZnO NWs are grown by low-cost chemical deposition techniques and their integration into solar cells presents, in principle, significant advantages including efficient optical absorption through light trapping phenomena and enhanced charge carrier separation and collection. However, they also raise some significant issues related to the control of the interface properties and to the technological integration. The present review is intended to report a detailed analysis of the state-of-the-art of all types of nanostructured solar cells integrating ZnO NWs, including extremely thin absorber solar cells, quantum dot solar cells, dye-sensitized solar cells, organic and hybrid solar cells, as well as halide perovskite-based solar cells.

Interface Engineering in Quantum-Dot-Sensitized Solar Cells

The unique properties of II-VI semiconductor nanocrystals such as superior light absorption, size-dependent optoelectronic properties, solution processability, and interesting photophysics prompted quantum-dot-sensitized solar cells (QDSSCs) as promising candidates for next-generation photovoltaic (PV) technology. QDSSCs have advantages such as low-cost device fabrication, multiple exciton generation, and the possibility to push over the theoretical power conversion efficiency (PCE) limit of 32%. In spite of dedicated research efforts to enhance the PCE, optimize individual solar cell components, and better understand the underlying science, QDSSCs have unfortunately not lived up to their potential due to shortcomings in the fabrication process and with the QDs themselves. In this feature article, we briefly discuss the QDSSC concepts and mechanisms of the charge carrier recombination pathways that occur at multiple interfaces, viz., (i) metal oxide (MO)/QDs, (ii) MO/QDs/electrolyte, and (iii) counter electrode (CE)/electrolyte. The rational strategies that have been developed to minimize/block these charge recombination pathways are elaborated. The article concludes with a discussion of the present challenges in fabricating efficient devices and future prospects for QDSSCs.

Quantum dot-sensitized solar cells

A comprehensive overview of the development of quantum dot-sensitized solar cells (QDSCs) is presented.

Bilayered photoanode consisting of zinc oxide hollow spheres and urchin-like titanium dioxide microspheres enables fast electron transport and efficient light-harvesting for improved-performance dye-sensitized solar cells

Derived from ZnO hollow spheres (ZHSs) as the underlayer and urchin-like TiO₂ spheres (UTSs) as the light scattering overlayer, a new bilayered photoanode (ZHS + UTS) is fabricated for use in dye-sensitized solar cells (DSSCs).

ZnO Hierarchical Nanostructure Photoanode in a CdS Quantum Dot-Sensitized Solar Cell

A hierarchical array of ZnO nanocones covered with ZnO nanospikes was hydrothermally fabricated and employed as the photoanode in a CdS quantum dot-sensitized solar cell (QDSSC). This QDSSC outperformed the QDSSC based on a simple ZnO nanocone photoanode in all the four principal photovoltaic parameters. Using the hierarchical photoanode dramatically increased the short circuit current density and also slightly raised the open circuit voltage and the fill factor. As a result, the conversion efficiency of the QDSSC based on the hierarchical photoanode was more than twice that of the QDSSC based on the simple ZnO nanocone photoanode. This improvement is attributable to both the enlarged specific area of the photoanode and the reduction in the recombination of the photoexcited electrons.

Three-dimensional TiO2/ZnO hybrid array as a heterostructured anode for efficient quantum-dot-sensitized solar cells

The development of a novel nanoarray photoanode with a heterostructure on a transparent conducting oxide substrate provides a promising scheme to fabricate efficient energy conversion devices. Herein, we successfully synthesize the vertically aligned hierarchical TiO2 nanowire/ZnO nanorod or TiO2 nanowire/ZnO nanosheet hybrid arrays, which are proven to be excellent anode candidates for superior light utilization. Consequently, the quantum-dot-sensitized solar cells based on such hybrid arrays exhibit an impressive power conversion efficiency (PCE) under AM 1.5G one sun illumination with improved short-circuit current density (JSC) and fill factor compared to pristine TiO2 nanowire arrays. Combined with the chemical-bath-deposited Cu2S counter electrode, the eventual PCE can be further optimized to as high as 4.57% for CdS/CdSe co-sensitized quantum dot solar cells.

A composite CdS thin film/TiO2 nanotube structure by ultrafast successive electrochemical deposition toward photovoltaic application

Fabricating functional compounds on substrates with complicated morphology has been an important topic in material science and technology, which remains a challenging issue to simultaneously achieve a high growth rate for a complex nanostructure with simple controlling factors. Here, we present a novel simple and successive method based on chemical reactions in an open reaction system manipulated by an electric field. A uniform CdS/TiO2 composite tubular structure has been fabricated in highly ordered TiO2 nanotube arrays in a very short time period (~90 s) under room temperature (RT). The content of CdS in the resultant and its crystalline structure was tuned by the form and magnitude of external voltage. The as-formed structure has shown a quite broad and bulk-like light absorption spectrum with the absorption of photon energy even below that of the bulk CdS. The as-fabricated-sensitized solar cell based on this composite structure has achieved an efficiency of 1.43% without any chemical doping or co-sensitizing, 210% higher than quantum dot-sensitized solar cell (QDSSC) under a similar condition. Hopefully, this method can also easily grow nanostructures based on a wide range of compound materials for energy science and electronic technologies, especially for fast-deploying devices.

Rational surface engineering of anatase titania core-shell nanowire arrays: full-solution processed synthesis and remarkable photovoltaic performance

The high-performance of a well-aligned 1D nanostructured electrode relies largely on a smart and rational modification with other active nanomaterials. Herein, we present a facile solution-based route to fabricate a well-aligned metal oxide-based core-shell hybrid arrays on TCO substrate. Demonstrated samples included nanowire@nanoparticle (TNW@NP) or nanowire@nanosheet (TNW@NS) with a unique porous core/shell nanowire arrays architecture in the absence or presence of DETA during the solvothermal treatment process. The "alcoholysis" and "ripening" growth mechanism is proposed to explain the formation of honeycomb-like nanosheets shell on nanowires core. Based on careful control of experimental condition, a novel double layered TiO2 photoanode (DL-TNW@NS-YSHTSs) consisting of 16 μm thick TNW@NS under layer and 6 μm thick yolk-shell hierarchical TiO2 microspheres (YSHTSs) top layer can be obtained, exhibiting an impressive PCE over 10% at 100 mW cm(-2), which can be attributed to the well-organized photoanode composed of hierarchical core-shell arrays architecture and yolk-shell hollow spheres architecture with synergistic effects of high dye loading and superior light scattering for prominent light harvesting efficiency.

Effects of interface states on photoexcited carriers in ZnO/Zn(2)SnO(4) type-II radial heterostructure nanowires

Type-II band alignment of heterostructure contributes to spatially separate electrons and holes leading to an increase in minority carrier lifetime, which has much more advantages in photocatalytic activities and photovoltaic device applications. Here, Zn2SnO4-sheathed ZnO radial heterostructure nanowires were constructed to investigate systematically interfacial charge separation. The lattice mismatch between ZnO and Zn2SnO4 induces interface states to exist at their heterointerface. At low pump fluence, photoexcited charges are localized within the ZnO core rather than separated due to the large interface barrier. Correspondingly, only ZnO-related bandedge ultraviolet (UV) and green emissions are dominated in photoluminescence spectra. At high pump fluence, however, impurities are ionized and electrons trapped in interface states are excited, resulting in a decrease in interface barrier, which makes photogenerated charges efficiently separated at their heterointerface by direct tunneling, and, consequently, an additional blue-violet emission, attributed to the heterointerface recombination of electrons in Zn2SnO4 conduction band (CB) and holes in ZnO valence band. Additionally, the heterointerface can separate effectively photoexcited carriers and form a photovoltaic effect. Our results provide the localization/separation condition of photogenerated charges for the type-II band alignment of core/shell heterostructure, which should be very useful for the realization of underpinned mechanism of the developed optoelectronic devices.

Hierarchically structured ZnO nanorods-nanosheets for improved quantum-dot-sensitized solar cells

ZnO nanorods (NRs) and nanosheets (NSs) were fabricated by adjusting the growth orientation of ZnO crystals in the reaction solution, respectively. The thin ZnO NSs were slowly assembled on the surface of NRs to form a hierarchically structured NR-NS photoelectrode for constructing CdS/CdSe quantum-dot-sensitized solar cells (QDSCs). This hierarchical structure had two advantages in improving the power conversion efficiency (PCE) of the solar cells: (a) it increased the surface area and modified the surface profile of the ZnO NRs to aid in harvesting more quantum dots, which leads to a high short-current density (Jsc); (b) it facilitated transportation of the electrons in this compact structure to reduce the charge recombination, which led to enhancement of the open-circuit voltage (Voc) and fill factor (FF). As a result, the QDSC assembled with the hierarchical NR-NS photoelectrode exhibited a high PCE of 3.28%, which is twice as much as that of the NR photoelectrode (1.37%).