Stable organic field-effect transistors for continuous and nondestructive sensing of chemical and biologically relevant molecules in aqueous environment

Electrochemical Stability Investigations and Drug Toxicity Tests of Electrolyte-Gated Organic Field-Effect Transistors

Electrolyte-gated organic field-effect transistors (EGOFETs) are emerging as a new frontier of organic bioelectronics, with promising applications in biosensing, pharmaceutical testing, and neuroscience. However, the limited charge carriers' mobility and well-known environmental instability of conjugated polymers constrain the real applications of organic bioelectronics. Here, we comparatively studied the electrochemical stability of p-type conjugated polymer films in the EGOFET configuration. By combining electrochemical stability tests, morphology characterization, and EQCM-D monitoring, we find that a donor-acceptor copolymer, poly(N-alkyldiketopyrrolo-pyrrole-dithienylthieno[3,2-b]thiophene) (DPP-DTT) shows improved mobility and electrochemical stability under an electrolyte, which may benefit from the ordered morphology and close alkyl side-chains' interdigitation preventing water diffusion and ion doping during long-term operation under an electrolyte. Based on the DPP-DTT EGOFETs, we have demonstrated a low-cost drug toxicity test platform that is sensitive enough to distinguish the cytotoxicity of different chemicals. This study overall pushes forward the development of organic bioelectronics with enhanced stability and sensitivity and presents successful exploitation of EGOFET in pharmaceutical research.

Stable organic thin-film transistors

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al₂O₃:HfO₂ nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 10⁵ s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm² V^-1 s^-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.

A flexible ionic synaptic device and diode-based aqueous ion sensor utilizing asymmetric polyelectrolyte distribution

Two terminal ionic synaptic devices and pH sensors based on ionic diodes were developed by utilizing asymmetric polyelectrolyte distribution.

Chemically Robust Ambipolar Organic Transistor Array Directly Patterned by Photolithography

Organic ambipolar transistor arrays for chemical sensors are prepared on a flexible plastic substrate with a bottom-gate bottom-contact configuration to minimize the damage to the organic semiconductors, for the first time, using a photolithographically patternable polymer semiconductor. Well-balanced ambipolar charge transport is achieved by introducing graphene electrodes because of the reduced contact resistance and energetic barrier for electron transport.

High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation

Since the first demonstration, the electrolyte-gated organic field-effect transistors (EGOFETs) have immediately gained much attention for the development of cutting-edge technology and they are expected to have a strong impact in the field of (bio-)sensors. However EGOFETs directly expose their active material towards the aqueous media, hence a limited library of organic semiconductors is actually suitable. By using two mostly unexplored strategies in EGOFETs such as blended materials together with a printing technique, we have successfully widened this library. Our benchmarks were 6,13-bis(triisopropylsilylethynyl)pentacene and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), which have been firstly blended with polystyrene and secondly deposited by means of the bar-assisted meniscus shearing (BAMS) technique. Our approach yielded thin films (i.e. no thicker than 30 nm) suitable for organic electronics and stable in liquid environment. Up to date, these EGOFETs show unprecedented performances. Furthermore, an extremely harsh environment, like NaCl 1M, has been used in order to test the limit of operability of these electronic devices. Albeit an electrical worsening is observed, our devices can operate under different electrical stresses within the time frame of hours up to a week. In conclusion, our approach turns out to be a powerful tool for the EGOFET manufacturing.

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

We report on top-gate OFETs with a bilayer gate dielectric comprising an Al₂O₃ /HfO₂ nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm²/(V s) and threshold voltage values of -1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C.

A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

We report on the reduction of contact resistance in solution-processed TIPS-pentacene (6,13-bis(triisopropylsilylethynyl)pentacene) and PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) top-gate bottom-contact organic field-effect transistors (OFETs) by using different contact-modification strategies. The study compares the contact resistance values in devices that comprise Au source/drain electrodes either treated with 2,3,4,5,6-pentafluorothiophenol (PFBT), or modified with an evaporated thin layer of the metal-organic molecular dopant molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3), or modified with a thin layer of the oxide MoO3. An improved performance is observed in devices modified with Mo(tfd)3 or MoO3 as compared to devices in which Au electrodes are modified with PFBT. We discuss the origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes.

Highly Sensitive Thin-Film Field-Effect Transistor Sensor for Ammonia with the DPP-Bithiophene Conjugated Polymer Entailing Thermally Cleavable tert-Butoxy Groups in the Side Chains

The sensing and detection of ammonia have received increasing attention in recent years because of the growing emphasis on environmental and health issues. In this paper, we report a thin-film field-effect transistor (FET)-based sensor for ammonia and other amines with remarkable high sensitivity and satisfactory selectivity by employing the DPP-bithiophene conjugated polymer pDPPBu-BT in which tert-butoxycarboxyl groups are incorporated in the side chains. This polymer thin film shows p-type semiconducting property. On the basis of TGA and FT-IR analysis, tert-butoxycarboxyl groups can be transformed into the -COOH ones by eliminating gaseous isobutylene after thermal annealing of pDPPBu-BT thin film at 240 °C. The FET with the thermally treated thin film of pDPPBu-BT displays remarkably sensitive and selective response toward ammonia and volatile amines. This can be attributed to the fact that the elimination of gaseous isobutylene accompanies the formation of nanopores with the thin film, which will facilitate the diffusion and interaction of ammonia and other amines with the semiconducting layer, leading to high sensitivity and fast response for this FET sensor. This FET sensor can detect ammonia down to 10 ppb and the interferences from other volatile analytes except amines can be negligible.

Microfabricated electrochemical pH and free chlorine sensors for water quality monitoring: recent advances and research challenges

Recent advances of micro-electrochemical ph and free chlorine sensors are reviewed and their technological challenges and perspectives are provided.

Systematic reliability study of top-gate p- and n-channel organic field-effect transistors

We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.