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Fu J, Fu K, Wang B, Ye Z, Gao X, Yan J, Wang Y. Vertically stacked quantum well diodes for multifunctional applications. OPTICS LETTERS 2023; 48:6052-6055. [PMID: 37966787 DOI: 10.1364/ol.506868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 10/28/2023] [Indexed: 11/16/2023]
Abstract
Dual-functioning multiple quantum well (MQW) diodes can simultaneously transmit and receive information through visible light. Here, we report vertically stacked red, green, and blue (RGB) MQW diodes for light detection and display applications. Both blue and green MQW diodes are monolithically integrated with distributed Bragg reflector (DBR) filters to realize the separation of light. The versatile RGB MQW transmitter/receiver system not only creates full-color display but also effectively separates RGB light into various colors. These results open feasible routes to generate multifunctional device for the development of full-color display and light receiver.
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2
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Chen D, Chen YC, Zeng G, Zhang DW, Lu HL. Integration Technology of Micro-LED for Next-Generation Display. RESEARCH (WASHINGTON, D.C.) 2023; 6:0047. [PMID: 37223466 PMCID: PMC10202190 DOI: 10.34133/research.0047] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 12/21/2022] [Indexed: 12/03/2023]
Abstract
Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integration of discrete device dies to achieve extended micro-LED array, and full color display requires integration of red, green, and blue micro-LED units on the same substrate. Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. In this review article, we summarized the 3 main integration technologies for micro-LED displays, which are called transfer integration, bonding integration, and growth integration. An overview of the characteristics of these 3 integration technologies is presented, while various strategies and challenges of integrated micro-LED display system are discussed.
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Affiliation(s)
- Dingbo Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China
| | - Yu-Chang Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China
| | - Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China
- Jia Shan Fudan Institute, Jiaxing, Zhejiang Province 314100, China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics,
Fudan University, Shanghai 200433, China
- Jia Shan Fudan Institute, Jiaxing, Zhejiang Province 314100, China
- Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science,
Shanghai University, Shanghai 200444, China
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3
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Vertical full-colour micro-LEDs via 2D materials-based layer transfer. Nature 2023; 614:81-87. [PMID: 36725999 DOI: 10.1038/s41586-022-05612-1] [Citation(s) in RCA: 37] [Impact Index Per Article: 37.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Accepted: 11/30/2022] [Indexed: 02/03/2023]
Abstract
Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance1,2. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density3-6. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down7-14, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique15-18 that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. These results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.
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4
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Lu Y, Krishna S, Liao CH, Yang Z, Kumar M, Liu Z, Tang X, Xiao N, Hassine MB, Thoroddsen ST, Li X. Transferable Ga 2O 3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47922-47930. [PMID: 36241169 PMCID: PMC9614724 DOI: 10.1021/acsami.2c14661] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Transferable Ga2O3 thin film membrane is desirable for vertical and flexible solar-blind photonics and high-power electronics applications. However, Ga2O3 epitaxially grown on rigid substrates such as sapphire, Si, and SiC hinders its exfoliation due to the strong covalent bond between Ga2O3 and substrates, determining its lateral device configuration and also hardly reaching the ever-increasing demand for wearable and foldable applications. Mica substrate, which has an atomic-level flat surface and high-temperature tolerance, could be a good candidate for the van der Waals (vdW) epitaxy of crystalline Ga2O3 membrane. Beyond that, benefiting from the weak vdW bond between Ga2O3 and mica substrate, in this work, the Ga2O3 membrane is exfoliated and transferred to arbitrary flexible and adhesive tape, allowing for the vertical and flexible electronic configuration. This straightforward exfoliation method is verified to be consistent and reproducible by the transfer and characterization of thick (∼380 nm)/thin (∼95 nm) κ-phase Ga2O3 and conductive n-type β-Ga2O3. Vertical photodetectors are fabricated based on the exfoliated Ga2O3 membrane, denoting the peak response at ∼250 nm. Through the integration of Ti/Au Ohmic contact and Ni/Ag Schottky contact electrode, the vertical photodetector exhibits self-powered photodetection behavior with a responsivity of 17 mA/W under zero bias. The vdW-bond-assisted exfoliation of the Ga2O3 membrane demonstrated here could provide enormous opportunities in the pursuit of vertical and flexible Ga2O3 electronics.
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Affiliation(s)
- Yi Lu
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Shibin Krishna
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Che-Hao Liao
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Ziqiang Yang
- Division
of Physical Science and Engineering, King
Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Mritunjay Kumar
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Zhiyuan Liu
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Xiao Tang
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Na Xiao
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Mohamed Ben Hassine
- CoreLabs, King Abdullah University of Science and Technology
(KAUST), Thuwal23955-6900, Kingdom of Saudi
Arabia
| | - Sigurdur T. Thoroddsen
- Division
of Physical Science and Engineering, King
Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
| | - Xiaohang Li
- Advanced
Semiconductor Laboratory, Electrical and Computer Engineering Program,
CEMSE Division, King Abdullah University
of Science and Technology (KAUST), Thuwal23955-6900, Kingdom of Saudi Arabia
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5
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Transfer-printed, tandem microscale light-emitting diodes for full-color displays. Proc Natl Acad Sci U S A 2021; 118:2023436118. [PMID: 33903240 DOI: 10.1073/pnas.2023436118] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Inorganic semiconductor-based microscale light-emitting diodes (micro-LEDs) have been widely considered the key solution to next-generation, ubiquitous lighting and display systems, with their efficiency, brightness, contrast, stability, and dynamic response superior to liquid crystal or organic-based counterparts. However, the reduction of micro-LED sizes leads to the deteriorated device performance and increased difficulties in manufacturing. Here, we report a tandem device scheme based on stacked red, green, and blue (RGB) micro-LEDs, for the realization of full-color lighting and displays. Thin-film micro-LEDs (size ∼100 μm, thickness ∼5 μm) based on III-V compound semiconductors are vertically assembled via epitaxial liftoff and transfer printing. A thin-film dielectric-based optical filter serves as a wavelength-selective interface for performance enhancement. Furthermore, we prototype arrays of tandem RGB micro-LEDs and demonstrate display capabilities. These materials and device strategies provide a viable path to advanced lighting and display systems.
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6
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Min JH, Li KH, Kim YH, Min JW, Kang CH, Kim KH, Lee JS, Lee KJ, Jeong SM, Lee DS, Bae SY, Ng TK, Ooi BS. Toward Large-Scale Ga 2O 3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:13410-13418. [PMID: 33709688 PMCID: PMC8041250 DOI: 10.1021/acsami.1c01042] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2021] [Accepted: 03/01/2021] [Indexed: 05/28/2023]
Abstract
Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga2O3 direct-epitaxy on the EG. The β-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.
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Affiliation(s)
- Jung-Hong Min
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Kuang-Hui Li
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yong-Hyeon Kim
- Energy
and Environmental Division, Korea Institute
of Ceramic Engineering and Technology, Jinju 52851, Korea
| | - Jung-Wook Min
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Chun Hong Kang
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Kyoung-Ho Kim
- Energy
and Environmental Division, Korea Institute
of Ceramic Engineering and Technology, Jinju 52851, Korea
- Department
of Materials Science and Engineering, Pusan
National University, Busan 46241, Korea
| | - Jae-Seong Lee
- School
of
Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Kwang Jae Lee
- Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Seong-Min Jeong
- Energy
and Environmental Division, Korea Institute
of Ceramic Engineering and Technology, Jinju 52851, Korea
| | - Dong-Seon Lee
- School
of
Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Si-Young Bae
- Energy
and Environmental Division, Korea Institute
of Ceramic Engineering and Technology, Jinju 52851, Korea
| | - Tien Khee Ng
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Boon S. Ooi
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Geum DM, Kim SK, Kang CM, Moon SH, Kyhm J, Han J, Lee DS, Kim S. Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation. NANOSCALE 2019; 11:23139-23148. [PMID: 31560000 DOI: 10.1039/c9nr04423j] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
In this study, we proposed a strategy to fabricate vertically stacked subpixel (VSS) micro-light-emitting diodes (μ-LEDs) for future ultrahigh-resolution microdisplays. At first, to vertically stack the LED with different colors, we successfully adopted a bonding-interface-engineered monolithic integration method using SiO2/SiNx distributed Bragg reflectors (DBRs). It was found that an intermediate DBR structure could be used as the bonding layer and color filter, which could reflect and transmit desired wavelengths through the bonding interface. Furthermore, the optically pumped μ-LED array with a pitch of 0.4 μm corresponding to the ultrahigh-resolution of 63 500 PPI could be successfully fabricated using a typical semiconductor process, including electron-beam lithography. Compared with the pick-and-place strategy (limited by machine alignment accuracy), the proposed strategy leads to the fabrication of significantly improved high-density μ-LEDs. Finally, we systematically investigated the effects of surface traps using time-resolved photoluminescence (TRPL) and two-dimensional simulations. The obtained results clearly demonstrated that performance improvements could be possible by employing optimal passivation techniques by diminishing the pixel size for fabricating low-power and highly efficient microdisplays.
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Affiliation(s)
- Dae-Myeong Geum
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), Daehak-ro 291, Yuseong-gu, Daejeon 34141, Republic of Korea.
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Kang CM, Kang SJ, Mun SH, Choi SY, Min JH, Kim S, Shim JP, Lee DS. Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission. Sci Rep 2017; 7:10333. [PMID: 28871141 PMCID: PMC5583240 DOI: 10.1038/s41598-017-11239-4] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Accepted: 08/21/2017] [Indexed: 11/15/2022] Open
Abstract
In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530–630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.
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Affiliation(s)
- Chang-Mo Kang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea
| | - Seok-Jin Kang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea
| | - Seung-Hyun Mun
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea
| | - Soo-Young Choi
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea
| | - Jung-Hong Min
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea
| | - Sanghyeon Kim
- Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Korea
| | - Jae-Phil Shim
- Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Korea.
| | - Dong-Seon Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea.
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Huang X, Zhang L, Wang S, Chi D, Chua SJ. Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode. ACS APPLIED MATERIALS & INTERFACES 2016; 8:15482-15488. [PMID: 27213523 DOI: 10.1021/acsami.6b03868] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.
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Affiliation(s)
- Xiaohu Huang
- Institute of Materials Research and Engineering , Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Li Zhang
- Singapore-MIT Alliance for Research and Technology , Singapore 138602, Singapore
| | - Shijie Wang
- Institute of Materials Research and Engineering , Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering , Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Soo Jin Chua
- Singapore-MIT Alliance for Research and Technology , Singapore 138602, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore , Singapore 117576, Singapore
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Kong DJ, Kang CM, Lee JY, Kim J, Lee DS. Color tunable monolithic InGaN/GaN LED having a multi-junction structure. OPTICS EXPRESS 2016; 24:A667-A673. [PMID: 27136884 DOI: 10.1364/oe.24.00a667] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al2O3 structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.
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