Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts

Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation

Mechanical exfoliation methods of two-dimensional materials have been an essential process for advanced devices and fundamental sciences. However, the exfoliation method usually generates various thick flakes, and a bunch of thick bulk flakes usually covers an entire substrate. Here, we developed a method to selectively isolate mono- to quadlayers of transition metal dichalcogenides (TMDCs) by sonication in organic solvents. The analysis reveals the importance of low interface energies between solvents and TMDCs, leading to the effective removal of bulk flakes under sonication. Importantly, a monolayer adjacent to bulk flakes shows cleavage at the interface, and the monolayer can be selectively isolated on the substrate. This approach can extend to preparing a monolayer device with crowded 17 electrode fingers surrounding the monolayer and for the measurement of electrostatic device performance.

Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer

Inconsistent interface control in devices based on two-dimensional materials (2DMs) has limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) interface properties has been reported, which has been exacerbated by the lack of direct investigations of buried interfaces commonly found in devices. Herein, we demonstrate a new process that enables the assembly and isolation of device-relevant heterostructures for buried interface characterization. This is achieved by implementing a water-soluble substrate (GeO2), which enables deposition of many materials onto the 2DM and subsequent heterostructure release by dissolving the GeO2 substrate. Here, we utilize this novel approach to compare how the chemistry, doping, and strain in monolayer MoS2 heterostructures fabricated by direct deposition vary from those fabricated by transfer techniques to show how interface properties differ with the heterostructure fabrication method. Direct deposition of thick Ni and Ti films is found to react with the monolayer MoS2. These interface reactions convert 50% of MoS2 into intermetallic species, which greatly exceeds the 10% conversion reported previously and 0% observed in transfer-fabricated heterostructures. We also measure notable differences in MoS2 carrier concentration depending on the heterostructure fabrication method. Direct deposition of thick Au, Ni, and Al2O3 films onto MoS2 increases the hole concentration by >1012 cm-2 compared to heterostructures fabricated by transferring MoS2 onto these materials. Thus, we demonstrate a universal method to fabricate 2D/3D heterostructures and expose buried interfaces for direct characterization.

Dramatically Enhanced Valley-Polarized Emission by Alloying and Electrical Tuning of Monolayer WTe2 x S2(1- x ) Alloys at Room Temperature with 1T'-WTe2 -Contact

Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two-dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe2 x S2(1- x ) monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto-valleytronic applications. Here, new strategies to efficiently tailor the valley-polarized PL from semiconducting monolayer WTe2 x S2(1- x ) at room temperature (RT) through alloying and back-gating are presented. The DVP at RT is found to increase drastically from < 5% in WS2 to 40% in WTe0.12 S1.88 by Te-alloying to enhance the spin-orbit coupling. Further enhancement and control of the DVP from 40% up to 75% is demonstrated by electrostatically doping the monolayer WTe0.12 S1.88 via metallic 1T'-WTe2 electrodes, where the use of 1T'-WTe2 substantially lowers the Schottky barrier height (SBH) and weakens the Fermi-level pinning of the electrical contacts. The demonstration of drastically enhanced DVP and electrical tunability in the valley-polarized emission from 1T'-WTe2 /WTe0.12 S1.88 heterostructures paves new pathways towards harnessing valley excitons in ultrathin valleytronic devices for RT applications.

Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface

Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 108 cm Hz1/2 W-1 and 2.41 × 107 cm Hz1/2 W-1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.

Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode

Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂), are promising alternative 2D materials. However, the devices based on these materials experience performance deterioration due to the formation of a Schottky barrier between metal contacts and semiconducting TMDCs. Here, we performed experiments to reduce the Schottky barrier height of MoS₂ field-effect transistors (FETs) by lowering the work function (Ф_m = E_vacuum - E_F,metal) of the contact metal. We chose polyethylenimine (PEI), a polymer containing simple aliphatic amine groups (-NH₂), as a surface modifier of the Au (Ф_Au = 5.10 eV) contact metal. PEI is a well-known surface modifier that lowers the work function of various conductors such as metals and conducting polymers. Such surface modifiers have thus far been utilized in organic-based devices, including organic light-emitting diodes, organic solar cells, and organic thin-film transistors. In this study, we used the simple PEI coating to tune the work function of the contact electrodes of MoS₂ FETs. The proposed method is rapid, easy to implement under ambient conditions, and effectively reduces the Schottky barrier height. We expect this simple and effective method to be widely used in large-area electronics and optoelectronics due to its numerous advantages.

A Voltage-Tuned Terahertz Absorber Based on MoS2/Graphene Nanoribbon Structure

Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1-10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS₂/graphene). Nanoribbons of MoS₂/graphene heterostructure are laid over a SiO₂ substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.

Scanning Near-Field Optical Microscopy of Ultrathin Gold Films

Ultrathin metal films are an essential platform for two-dimensional (2D) material compatible and flexible optoelectronics. Characterization of thin and ultrathin film-based devices requires a thorough consideration of the crystalline structure and local optical and electrical properties of the metal-2D material interface since they could be dramatically different from the bulk material. Recently, it was demonstrated that the growth of gold on the chemical vapor deposited monolayer MoS₂ leads to a continuous metal film that preserves plasmonic optical response and conductivity even at thicknesses below 10 nm. Here, we examined the optical response and morphology of ultrathin gold films deposited on exfoliated MoS₂ crystal flakes on the SiO₂/Si substrate via scattering-type scanning near-field optical microscopy (s-SNOM). We demonstrate a direct relationship between the ability of thin film to support guided surface plasmon polaritons (SPP) and the s-SNOM signal intensity with a very high spatial resolution. Using this relationship, we observed the evolution of the structure of gold films grown on SiO₂ and MoS₂ with an increase in thickness. The continuous morphology and superior ability with respect to supporting SPPs of the ultrathin (≤10 nm) gold on MoS₂ is further confirmed with scanning electron microscopy and direct observation of SPP fringes via s-SNOM. Our results establish s-SNOM as a tool for testing plasmonic films and motivate further theoretical research on the impact of the interplay between the guided modes and the local optical properties on the s-SNOM signal.

Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy via Engineering MoS2-Metal van der Waals Contact

The Schottky barrier (SB) in the ultraclean van der Waals contact between two-dimensional (2D) MoS₂ and three-dimensional (3D) indium (In) strikingly deviates from the Schottky-Mott limit (SML). Herein, on the basis of first-principles calculation, the origin of the SB deviation is brought to bear, as well as a strategy for mitigating the SB deviation. In light of the good agreement between the SB and the corrected SB by interface potential difference (ΔV) and Fermi -level shift (ΔE_F) based on the SML, the SB deviation is attributed to the combined effects of ΔV and ΔE_F. Furthermore, when a Au, Sc, or Ti thin film is coated on the back side of In, the SB deviation and the sum of ΔV and ΔE_F decrease similarly. Importantly, in the Ti coating situation, the SB is reduced to 0.12 eV, notably smaller than the value of 0.30 eV in the Au coating case. This interface engineering can be generalized to regulate the SB between a 2D semiconductor and a 3D alloy.

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2field-effect transistors

The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS₂) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS₂based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS₂. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS₂interface for optimum MoS₂-based device performance. The tunable band-gap of MoS₂with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS₂in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS₂and its effect on structural and electronic properties are extensively discussed.

Improvement of Visible Photodetection of Chemical Vapor Deposition-Grown MoS2 Devices via Graphene/Au Contacts

Two-dimensional (2D) molybdenum disulfide (MoS₂) is a promising material for constructing high-performance visible photosensor arrays because of its high mobility and scale-up process. These distinct properties enable the construction of practical optoelectrical sensor arrays. However, contact engineering for MoS₂ films is not still optimized. In this work, we inserted a graphene interlayer between the MoS₂ films and Au contacts (graphene/Au) via the wet-transfer method to boost the device performance. Using graphene/Au contacts, outstanding electrical properties, namely field-effect mobility of 12.06 cm²/V∙s, on/off current ratio of 1.0 × 10⁷, and responsivity of 610 A/W under illumination at 640 nm, were achieved. These favorable results were from the Fermi-level depinning effect induced by the graphene interlayer. Our results may help to construct large-area photonic sensor arrays based on 2D materials.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

2D transition metal chalcogenide (TMDC) materials, such as MoS₂ , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS₂ have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS₂ beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS₂ in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.

Geometry-asymmetric photodetectors from metal-semiconductor-metal van der Waals heterostructures

The functional diversities of two-dimensional (2D) material devices with simple architectures are ultimately limited by immature doping techniques. An alternative strategy is to use geometry-asymmetric metal-semiconductor-metal (GA-MSM) structures, which enable the basic functions of semiconductor junctions such as rectification and photovoltaics. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) based on the separation and self-assembly of p-type SnS layered nanosheets (NSs) and n-type SnS₂ nanoparticles (NPs) are obtained using an aqueous phase exfoliation (APE) method. Due to the surface charge transfer doping, the carrier transport mechanism of devices based on MDvdWHs turns from thermionic field emission (TFE) to thermionic emission (TE), with the rectification factor (I_forward/I_reverse) changing from 0.7 to 3. To further illustrate the experimental results, the generic current transport models of GA-MSM devices have been established based on the TE and TFE mechanisms in which the TE and TFE mechanisms lead to opposite rectification phenomena in good agreement with the experimental results. The GA-MSM devices show a photovoltaic effect with a high responsivity of 35 A W^-1 and detectivity of 3.4 × 10¹¹ cm Hz^1/2 W^-1. This study not only provides a novel strategy to design photovoltaic devices with MDvdWHs, but more importantly, we have established fundamental models for the rectification behavior of GA-MSM devices.

Boosting CO2 Electroreduction via Construction of a Stable ZnS/ZnO Interface

Carbon dioxide (CO₂) electroreduction can offer a way of relieving environmental and energy issues. Gold and silver catalysts show considerable electrochemical performance for CO production; however, the electrochemical CO₂ conversion to CO is still restricted by the Faradaic efficiency, current density, and stability over the catalysts. Non-noble metal (zinc) is considered as a promising catalyst for CO₂ electroreduction because of its low cost. However, because of the electron-rich property of zinc, it has a weak adsorption capacity of intermediates, resulting in a poor CO₂ electroreduction performance. In this work, ZnS nanoparticles are embedded onto the ZnO surface to construct a stable ZnS/ZnO interface structure. The ZnS/ZnO interface reaches a maximum current density of 327.2 ± 10.6 mA cm^-2 with a CO Faradaic efficiency of 91.9 ± 0.6% at -0.73 V vs a reversible hydrogen electrode (RHE) and remains stable for 40 h at a current density of 115.7 ± 7.0 mA cm^-2 with a CO Faradaic efficiency of 93.8 ± 3.7% at -0.56 V vs RHE.

Interface effects of Schottky devices built from MoS2and high work function metals

Schottky junctions, formed by high work function metals and semiconductors, are important devices in electronics and optoelectronics. The metal deposition in traditional Schottky interfaces usually damages the semiconductor surface and causes defect states, which reduces the Schottky barrier height and device performance. This can be avoided in the atomically smooth interface formed by two-dimensional (2D) metals and semiconductors. For better interface tailoring engineering, it is particularly important to understand various interface effects in such 2D Schottky devices under critical or boundary conditions. Here we report the fabrication and testing of three types of MoS₂devices, i.e., using PtTe₂, Cr and Au as contact materials. While the Cr/MoS₂contact is an ohmic contact, the other two are Schottky contacts. The van-der-Waals interface of PtTe₂-MoS₂results in a well-defined OFF state and a significant rectification ratio of 10⁴. This parameter, together with an ideality factor 2.1, outperforms the device based on evaporated Au. Moreover, a device in the intermediate condition is also presented. An abrupt increase in the reverse current is observed and understood based on the enhanced tunneling current. Our work manifests the essential role of doping concentration and provides another example for 2D Schottky interface design.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts

Two-dimensional (2D) molybdenum disulfide (MoS₂) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS₂ films has not yet been established, although contact property is directly associated to the device performance. Herein, we introduce graphene-interlayered Ti contacts (graphene/Ti) into large-area MoS₂ device arrays using a wet-transfer method. We achieve MoS₂ devices with superior electrical and photoelectrical properties using graphene/Ti contacts, with a field-effect mobility of 18.3 cm²/V∙s, on/off current ratio of 3 × 10⁷, responsivity of 850 A/W, and detectivity of 2 × 10¹² Jones. This outstanding performance is attributable to a reduction in the Schottky barrier height of the resultant devices, which arises from the decreased work function of graphene induced by the charge transfer from Ti. Our research offers a direction toward large-scale electronic and optoelectronic applications based on 2D materials.

Hydrophilic Character of Single-Layer MoS2 Grown on Ag(111)

The study of MoS2/metal interfaces is crucial for engineering efficient semiconductor-metal contacts in 2D MoS2-based devices. Here we investigate a MoS2/Ag heterostructure fabricated by growing a single MoS2 layer on Ag(111) by pulsed laser deposition under ultrahigh vacuum (UHV) conditions. The surface structure is observed in situ by scanning tunneling microscopy, revealing the hexagonal moiré pattern characteristic of the clean MoS2/Ag(111) interface. Ex situ Raman spectroscopy reveals an anomalous behavior of vibrational modes, induced by the strong MoS2-Ag interaction. After few-hours exposure to ambient conditions the Raman response significantly changes and the formation of molybdenum oxysulfides is revealed by X-ray photoelectron spectroscopy. These effects are due to the interplay with water vapor and can be reversed by a moderate UHV annealing. A polymeric (PMMA) capping is demonstrated to hinder water-induced modifications, preserving the original interface quality for months.

Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures

Van der Waals heterostructures (vdWHs) have attracted tremendous interest owing to the ability to assemble diverse building blocks without the constraints of lattice matching and processing compatibility. However, once assembled, the fabricated vdWHs can hardly be separated into individual building blocks for further manipulation, mainly due to technical difficulties in the disassembling process. Here, we show a method to disassemble the as-fabricated vdWHs into individual building blocks, which can be further reassembled into new vdWHs with different device functionalities. With this technique, we demonstrate reconfigurable transistors from n-type to p-type and back-gate to dual-gate structures through re-stacking. Furthermore, reconfigurable device behaviors from floating gate memory to Schottky diode and reconfigurable anisotropic Raman behaviors have been obtained through layer re-sequencing and re-twisting, respectively. Our results could lead to a reverse engineering concept of disassembled vdWHs electronics in parallel with state-of-the-art vdWHs electronics, offering a general method for multi-functional pluggable electronics and optoelectronics with limited material building blocks.

Here, the authors report a method to fabricate reconfigurable electronic devices based on 2D materials by using polyvinyl alcohol as substrate. This technique enables repeatable disassembling and reassembling of van der Waals heterostructures with different functionalities.

Influence of MoS2-metal interface on charge injection: a comparison between various metal contacts

Achieving good contacts is vital for harnessing the fascinating properties of two-dimensional (2D) materials. However, unsatisfactory 2D material-metal interfaces remain a problem that hinders the successful application of 2D materials for fabricating nanodevices. In this study, Kelvin probe force microscopy (KPFM) and other high-resolution microscopy techniques are utilized to characterize the surface morphology and contact interface between MoS₂ and common metals including Au, Ti, Pd, and Ni. Surface potential information, including the contact potential difference ([Formula: see text]) and surface potential difference ([Formula: see text]) of each MoS₂-metal contact, is obtained. By comparing the surface potential distribution mappings with and without illumination, non-zero surface photovoltage (SPV) values and evident shift with amplitudes of 32 mV and 44 mV are observed for MoS₂-Au and Ti, but not for MoS₂-Pd and Ni. The Schottky barrier heights of MoS₂-Au, Ti, Pd, and Ni are roughly evaluated from their I-V curves. Raman spectroscopy is also carried out to ensure more convincing results. All the results suggest that a smoother MoS₂-metal interface results in better charge transport behaviors. Our analysis of the underlying mechanism and experimental findings offer a new perspective to better understand MoS₂-metal contacts and underscore the fundamental importance of interface morphology for MoS₂-based devices.

An asymmetric contact-induced self-powered 2D In2S3 photodetector towards high-sensitivity and fast-response

Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieved a self-powered operation by adopting a geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with an asymmetric contact is combined with the traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA W-1), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.

Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability

In this review on contacts with MoS₂, we consider reports on both interface chemistry and device characteristics. We show that there is considerable disagreement between reported properties, at least some of which may be explained by variability in the properties of geological MoS₂. Furthermore, we highlight that while early experiments using photoemission to study the interface behavior of metal-MoS₂ showed a lack of Fermi-level pinning, device measurements repeatedly confirm that the interface is indeed pinned. Here we suggest that a parallel conduction mechanism enabled by metallic defects in the MoS₂ materials may explain both results. We note that processing conditions during metal depositions on MoS₂ can play a critical role in the interface chemistry, with differences between high vacuum and ultra-high vacuum being particularly important for low work function metals. This can be used to engineer the interfaces by using thin metal-oxide interlayers to protect the MoS₂ from reactions with the metals. We also report on the changes in the interfaces that can occur at high temperature which include enhanced reactions between Ti or Cr and MoS₂, diffusion of Ag into MoS₂, and delamination of Fe. What is clear is that there is a dearth of experimental work that investigates both the interface chemistry and device properties in parallel.

Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer

Contact engineering for two-dimensional (2D) transition metal dichalcogenides (TMDCs) is crucial for realizing high-performance 2D TMDC devices, and most studies on contact properties of 2D TMDCs have mainly focused on Fermi level unpinning. Here, we investigated electrical and photoelectrical properties of chemical vapor deposition (CVD)-grown molybdenum disulfide (MoS₂) monolayer devices depending on metal contacts, Ti/Pt, Ti/Au, Ti, and Ag, and particularly demonstrated the essential role of defects in MoS₂ in contact properties. Remarkably, MoS₂ devices with Ag contacts show a field-effect mobility of 12.2 cm² V^-1 s^-1, an on/off current ratio of 7 × 10⁷, and a photoresponsivity of 1020 A W^-1, which are outstanding compared to similar devices with other metal contacts. These improvements are attributed to a reduced Schottky barrier height, thanks to the small work function of Ag and Ag-MoS₂ orbital hybridization at the interface, which facilitates efficient charge transfer between MoS₂ and Ag. Interestingly, X-ray photoelectron spectroscopic analysis reveals that Ag₂S was formed in our defect-containing CVD-grown MoS₂ monolayer, but such orbital hybridization is not observed in a nearly defect-free exfoliated MoS₂. This distinction shows that defects existing in MoS₂ enable Ag to effectively couple to MoS₂ and correspondingly enhance multiple electrical and photoelectrical properties.

Evolution of local strain in Ag-deposited monolayer MoS2 modulated by interface interactions

Strain is usually unavoidable in the fabrication of devices based on two-dimensional (2D) transition metal chalcogenides (TMDCs). When metals are deposited onto monolayer TMDCs, strain can be induced at metal-TMDC interfaces and evolves with elapsed time. However, the effect of the substrate on the strain evolution at the metal-TMDC interfaces is still unclear, which hinders the development of reliable 2D TMDC-based devices with perfect contacts. In this work, we investigated the evolution of metal-induced local strains for Ag-deposited monolayer MoS2 on three kinds of substrates with different interface interactions, i.e., sapphire, SiO2/Si, and mica. The interface interaction between MoS2 and sapphire is the strongest, while that between MoS2 and mica is the weakest. With the splitting of MoS2 Raman peaks as an indicator of local strain, the evolution behavior of the local strain at the Ag-MoS2 interfaces is found to greatly depend on the interface interactions from the underlying substrates. With elapsed time, the local strain is best preserved on sapphire but relaxed most easily on mica. Density-functional theory calculations show that the adsorption energies at the interfaces are different for MoS2 on different substrates, suggesting that the interface interaction between monolayer MoS2 and the substrates is crucial for the strain evolution. Our work is of benefit for the study of stability and reliability of devices based on TMDCs, particularly for flexible electronic devices.

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely constrained within the layers, strong Fermi-level pinning (FLP) was observed in TMDC-based devices, reducing the tunability of the Schottky barrier height. We present evidence that metal-induced gap states (MIGS) are the origin for the large FLP similar to conventional semiconductors. A variety of TMDCs (MoSe₂, WSe₂, WS₂, and MoTe₂) were investigated using high-spatial-resolution surface characterization techniques, permitting us to distinguish between defected and pristine regions. The Schottky barrier heights on the pristine regions can be explained by MIGS, inducing partial FLP. The FLP strength is further enhanced by disorder-induced gap states induced by transition-metal vacancies or substitutionals at the defected regions. Our findings emphasize the importance of defects on the electron transport properties in TMDC-based devices and confirm the origin of FLP in TMDC-based metal/semiconductor junctions.

Two-Mode MoS2 Filament Transistor with Extremely Low Subthreshold Swing and Record High On/Off Ratio

With rapid development of integrated circuits, urgent requirements for a transistor with lower subthreshold swing (SS) and better contact properties are needed. To optimize the SS and contact issues, we propose a concept of molybdenum disulfide (MoS₂) filament transistor with two modes. We successfully fabricated the proposed devices in a wafer-scale. Mode I can enable the device with extremely low SS down to 2.26 mV/dec by switching the contact filament between on and off while mode II can realize a record high on/off ratio of 2.6 × 10⁹ by using filament as quasi-zero dimensional (quasi-0D) contact. Compared to conventional three-dimensional (3D) contact, quasi-0D contact using conductive filament improves the current density nearly 50 times. We also built a spice model to simulate the electrical behaviors, and the simulation results show an extremely low SS in mode I (using abrupt filament formation/rupture) and excellent quasi-0D contact in mode II. The two-mode MoS₂ filament transistor can significantly improve the SS and contact comparing to those of the state-of-the-art transistors, which has the great potential to boost the development of the next generation mainstream transistors.

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high-performance devices while adapting for large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS₂ devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD-grown MoS₂ film and a Ag electrode as an interfacial layer. The MoS₂ field-effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field-effect mobility of 35 cm² V^-1 s^-1 , an on/off current ratio of 4 × 10⁸ , and a photoresponsivity of 2160 A W^-1 , compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n-doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS₂ and electrodes. This demonstration of contact interface engineering with CVD-grown MoS₂ and graphene is a key step toward the practical application of atomically thin TMDC-based devices with low-resistance contacts for high-performance large-area electronics and optoelectronics.

Probing Evolution of Local Strain at MoS2-Metal Boundaries by Surface-Enhanced Raman Scattering

Strain usually exists in two-dimensional (2D) materials and devices, and its presence drastically modulates their properties. When 2D materials interface with noble metals, local strain and surface plasmon can couple at the metal-2D material boundaries, delivering a lot of intriguing phenomena. Current studies are mostly focused on the explanations of these strain-related phenomena based on a static point of view. Although strain can typically be relaxed in many environments, the time evolution of strain at metal-2D material interfaces remains largely unknown. In this work, we investigate the evolution of local strain at Ag-MoS₂ boundaries by surface-enhanced Raman scattering. With the split of MoS₂ Raman peaks as an indicator of local strain, it is found that the originally localized strain at Ag-MoS₂ boundaries evolves and relaxes with time into a delocalized strain in MoS₂ plane. The time to start the strain relaxation depends on the number of layers of MoS₂ flakes, suggesting that the relaxation may result from the mechanical instability of the interface between the topmost MoS₂ layer and the underlying materials. The relaxation occurs in a certain period of time, i.e., ∼70 days for 1L and ∼30 days for 3L. Accompanying the strain relaxation, surface sulfurization of Ag also occurs, a process that reduces the strength of locally enhanced electric field. Our results not only provide a deep understanding of strain evolution at metal-MoS₂ interfaces but also shed light on the optimization of MoS₂-based device fabrications.

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors

In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principles computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (L_c) along the axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at L_c ranging from 3.90 Å to 4.10 Å. In particular, a field effect transistor (FET) based on 12-ZPNT (with 12 unit cells in the transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at L_c = 4.60 Å. However, only weak gate modulation is demonstrated when the nanotube becomes a semimetal at L_c = 4.10 Å. This study indicates that ZPNTs are profoundly appealing for applications in strain sensors. Our findings pave the way for the development of high-performance strain-engineered electronics based on Dirac fermions in 1D materials.

Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

Tin(ii) monosulfide (SnS) is a layered, anisotropic material that is of interest as a two-dimensional semiconductor for opto-electronic, thermoelectric, and piezoelectric applications. In this study, the effect of work function on contact behavior was investigated. Ni/Au, Pd/Au, Cr/Au, and Ti/Au contacts were fabricated onto individual, solution-synthesized, p-type SnS nanoribbons. The lower work function metals (Cr and Ti) formed Schottky contacts, whereas the higher work function metals (Ni and Pd) formed ohmic or semi-ohmic contacts. Of the ohmic contacts, Ni was found to have a lower contact resistance (∼10^-4 Ω cm² or lower) than Pd (∼10^-3 Ω cm² or lower). Both the calculated Schottky barriers (0.39 and 0.50 eV) for Cr and Ti, respectively, and the ohmic behavior for Ni and Pd agree with behavior predicted by Schottky-Mott theory. The results indicate that high work function metals should be considered to form low resistance contacts to SnS multilayers.

Role of vacancy sites and UV-ozone treatment on few layered MoS2 nanoflakes for toxic gas detection

Various issues like global warming and environmental pollutions have led to the research of toxic gas detection worldwide. In this work, we have tried to develop a molybdenum disulfide (MoS₂) based gas sensor to detect toxic gases like ammonia and NO. MoS₂, an inorganic analog of graphene, has attracted lots of attention for many different applications recently. This paper reports the use of liquid exfoliated MoS₂ nanoflakes as the sensing layer in a handheld, resistive toxic gas sensor. The nanoflakes were exfoliated from MoS₂ bulk powder using a sonication based exfoliation technique at room temperature. The successful exfoliation of the nanoflakes was characterized using different techniques e.g., optical microscopy, atomic force microscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy, x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy and ultraviolet-visible spectrophotometry. The characterization results showed that few-layered nanoflakes have successfully been exfoliated. The MoS₂ nanoflakes showed reasonable sensing towards ammonia and NO. In order to explore the effect of particle size on ammonia sensing, the MoS₂ flakes were also exfoliated using different sonication times. We also observed that various factors like presence of vacancy sites, ambient oxygen, humidity, different contact electrodes have significant effect on the sensing characteristics. In fact, the response of the sensing layer against 400 ppm of ammonia increased from 54.1% to ∼80% when it was UV-ozone treated. This work holds promises to developing cost-effective, reliable and highly sensitive MoS₂ based ammonia sensors.

In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS2 Interfaces

Nanoscale transition-metal dichalcogenide (TMDC) materials, such as MoS₂, exhibit promising behavior in next-generation electronics and energy-storage devices. TMDCs have a highly anisotropic crystal structure, with edge sites and basal planes exhibiting different structural, chemical, and electronic properties. In virtually all applications, two-dimensional or bulk TMDCs must be interfaced with other materials (such as electrical contacts in a transistor). The presence of edge sites vs basal planes (i.e., the crystallographic orientation of the TMDC) could influence the chemical and electronic properties of these solid-state interfaces, but such effects are not well understood. Here, we use in situ X-ray photoelectron spectroscopy (XPS) to investigate how the crystallography and structure of MoS₂ influence chemical transformations at solid-state interfaces with various other materials. MoS₂ materials with controllably aligned crystal structures (horizontal vs vertical orientation of basal planes) were fabricated, and in situ XPS was carried out by sputter-depositing three different materials (Li, Ge, and Ag) onto MoS₂ within an XPS instrument while periodically collecting photoelectron spectra; these deposited materials are of interest due to their application in electronic devices or energy storage. The results showed that Li reacts readily with both crystallographic orientations of MoS₂ to form metallic Mo and Li₂S, while Ag showed very little chemical or electronic interaction with either type of MoS₂. In contrast, Ge showed significant chemical interactions with MoS₂ basal planes, but only minor chemical changes were observed when Ge contacted MoS₂ edge sites. These findings have implications for electronic transport and band alignment at these interfaces, which is of significant interest for a variety of applications.

Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors

HfS₂ is one of the emerging transition metal dichalcogenides and is very promising for low-power nanoelectronics and high-sensitivity optoelectronic device applications. We studied the band structures of 1T-HfS₂ with different thicknesses by first principles simulation, and the impact of different metal contacts to the HfS₂ device performance has been experimentally studied. Back-gate and top-gate HfS₂ field-effect transistors (FETs) were fabricated, and better electrical characteristics have been achieved with the FETs with the Ti/Au contact as compared with the Pt-contacted FETs. Thin layers of Pt and Ti/Au films were deposited on HfS₂ flakes to investigate the metal/HfS₂ interface by using scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. A smoother Ti/Au film was formed on HfS₂, resulting in higher carrier injection and transport efficiency. The phonon behavior being dominated by the interface chemical bonding at the Ti/Au contact region has been confirmed with the more sensitive A_1g phonon mode from the bilayer HfS₂.

A two-dimensional semiconductor transistor with boosted gate control and sensing ability

Transistors with exfoliated two-dimensional (2D) materials on a SiO₂/Si substrate have been applied and have been proven effective in a wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, and spintronics. However, these devices usually suffer from limited gate control because of the thick SiO₂ gate dielectric and the lack of reliable transfer method. We introduce a new back-gate transistor scheme fabricated on a novel Al₂O₃/ITO (indium tin oxide)/SiO₂/Si "stack" substrate, which was engineered with distinguishable optical identification of exfoliated 2D materials. High-quality exfoliated 2D materials could be easily obtained and recognized on this stack. Two typical 2D materials, MoS₂ and ReS₂, were implemented to demonstrate the enhancement of gate controllability. Both transistors show excellent electrical characteristics, including steep subthreshold swing (62 mV dec^-1 for MoS₂ and 83 mV dec^-1 for ReS₂), high mobility (61.79 cm² V^-1 s^-1 for MoS₂ and 7.32 cm² V^-1 s^-1 for ReS₂), large on/off ratio (~10⁷), and reasonable working gate bias (below 3 V). Moreover, MoS₂ and ReS₂ photodetectors fabricated on the basis of the scheme have impressively leading photoresponsivities of 4000 and 760 A W^-1 in the depletion area, respectively, and both have exceeded 10⁶ A W^-1 in the accumulation area, which is the best ever obtained. This opens up a suite of applications of this novel platform in 2D materials research with increasing needs of enhanced gate control.

Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition

Transition metal dichalcogenides, particularly MoS₂, have recently received enormous interest in explorations of the physics and technology of nanodevice applications because of their excellent optical and electronic properties. Although monolayer MoS₂ has been extensively investigated for various possible applications, its difficulty of fabrication renders it less appealing than multilayer MoS₂. Moreover, multilayer MoS₂, with its inherent high electronic/photonic state densities, has higher output driving capabilities and can better satisfy the ever-increasing demand for versatile devices. Here, we present multilayer MoS₂ back-gate thin-film transistors (TFTs) that can achieve a relatively low subthreshold swing of 0.75 V/decade and a high mobility of 41 cm²·V^-1·s^-1, which exceeds the typical mobility value of state-of-the-art amorphous silicon-based TFTs by a factor of 80. Ag and Au electrode-based MoS₂ TFTs were fabricated by a convenient and rapid process. Then we performed a detailed analysis of the impacts of metal contacts and MoS₂ film thickness on electronic performance. Our findings show that smoother metal contacts exhibit better electronic characteristics and that MoS₂ film thickness should be controlled within a reasonable range of 30-40 nm to obtain the best mobility values, thereby providing valuable insights regarding performance enhancement for MoS₂ TFTs. Additionally, to overcome the limitations of the conventional fabrication method, we employed a novel approach known as optically induced electrodeposition (OIE), which allows the flexible and precise patterning of metal films and enables rapid and mask-free device fabrication, for TFT fabrication.

Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family

As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth-abundant, low-cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

Controlling the work function of molybdenum disulfide by in situ metal deposition

Control of the work function of molybdenum disulfide (MoS2) under ultrathin metal was investigated using in situ metal deposition and direct ultraviolet photoelectron spectroscopy measurement in an ultra-high vacuum system. When the metal thickness turned from two dimensional into bulk, the work function was also raised up at the nickel-MoS2 interface, barely changed at the titanium-MoS2 interface and lowered at the hafnium-MoS2 interface. Meanwhile, the mechanisms of charge transfer and band alignment with metal deposition were also discussed. The Schottky barrier at metal-MoS2 interfaces could be tailored by both types and thicknesses of deposited metal. The low work function metal was a good indicator for MoS2 contact electrodes. It paved the way towards future high performance MoS2 device applications.

Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors

A series of two-dimensional (2D) transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), can be attractive materials for photonic and electronic applications due to their exceptional properties. Among these unique properties, high mobility of 2D TMDCs enables realization of high-performance nanoelectronics based on a thin film transistor (TFT) platform. In this contribution, we report highly enhanced field effect mobility (μ(eff) = 50.1 cm(2)/(V s), ∼2.5 times) of MoS2 TFTs through the sol-gel processed high-k ZrO2 (∼22.0) insulator, compared to those of typical MoS2/SiO2/Si structures (μ(eff) = 19.4 cm(2)/(V s)) because a high-k dielectric layer can suppress Coulomb electron scattering and reduce interface trap concentration. Additionally, in order to avoid costly conventional mask based photolithography and define the patterns, we employ a simple laser direct writing (LDW) process. This process allows precise and flexible control with reasonable resolution (up to ∼10 nm), depending on the system, and enables fabrication of arbitrarily patterned devices. Taking advantage of continuing developments in laser technology offers a substantial cost decrease, and LDW may emerge as a promising technology.

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

Radio Frequency Transistors and Circuits Based on CVD MoS2

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.

Chromosome territory repositioning induced by PHA-activation of lymphocytes: A 2D and 3D appraisal

Background

Genomes and by extension chromosome territories (CTs) in a variety of organisms exhibit nonrandom organization within interphase nuclei. CTs are susceptible to movement upon induction by a variety of stimuli, including: cell differentiation, growth factors, genotoxic agents, proliferating status, and stimulants that induce novel transcription profiles. These findings suggest nuclear architecture can undergo reorganization, providing support for a functional significance of CT organization. The effect of the initiation of transcription on global scale chromatin architecture has been underexplored. This study investigates the organization of all 24 human chromosomes in lymphocytes from two individuals in resting and phytohaemagglutinin activated lymphocytes using 2D and 3D approaches.

Results

The radial organization of CTs in lymphocytes in both resting and activated lymphocytes follows a gene-density pattern. However, CT organization in activated nuclei appears less constrained exhibiting a more random organization. We report differences in the spatial relationship between homologous and heterologous CTs in activated nuclei. In addition, a reproducible radial hierarchy of CTs was identified and evidence of a CT repositioning was observed in activated nuclei using both 2D and 3D approaches.

Conclusions

Alterations between resting and activated lymphocytes could be adaptation of CTs to the new transcription profile and possibly the formation of new neighborhoods of interest or interaction of CTs with nuclear landmarks. The increased distances between homologous and heterologous CTs in activated lymphocytes could be a reflection of a defensive mechanism to reduce potential interaction to prevent any structural chromosome abnormalities (e.g. translocations) as a result of DNA damage that increases during lymphocyte activation.